JP2008187179A - 複数のvhf源の電力を配分することによる、ウエハ全体のプラズマプロセス均一性の改善 - Google Patents
複数のvhf源の電力を配分することによる、ウエハ全体のプラズマプロセス均一性の改善 Download PDFInfo
- Publication number
- JP2008187179A JP2008187179A JP2008017173A JP2008017173A JP2008187179A JP 2008187179 A JP2008187179 A JP 2008187179A JP 2008017173 A JP2008017173 A JP 2008017173A JP 2008017173 A JP2008017173 A JP 2008017173A JP 2008187179 A JP2008187179 A JP 2008187179A
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- JP
- Japan
- Prior art keywords
- frequency
- vhf
- plasma
- center
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US89863207P | 2007-01-30 | 2007-01-30 | |
| US11/733,764 US7879731B2 (en) | 2007-01-30 | 2007-04-11 | Improving plasma process uniformity across a wafer by apportioning power among plural VHF sources |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008187179A true JP2008187179A (ja) | 2008-08-14 |
| JP2008187179A5 JP2008187179A5 (enExample) | 2011-03-31 |
Family
ID=39323943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008017173A Pending JP2008187179A (ja) | 2007-01-30 | 2008-01-29 | 複数のvhf源の電力を配分することによる、ウエハ全体のプラズマプロセス均一性の改善 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7879731B2 (enExample) |
| EP (1) | EP1953795A2 (enExample) |
| JP (1) | JP2008187179A (enExample) |
| KR (1) | KR100988704B1 (enExample) |
| SG (1) | SG144875A1 (enExample) |
| TW (1) | TW200845090A (enExample) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015115216A (ja) * | 2013-12-12 | 2015-06-22 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP2015162266A (ja) * | 2014-02-26 | 2015-09-07 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP2016046357A (ja) * | 2014-08-22 | 2016-04-04 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP2017069209A (ja) * | 2013-02-12 | 2017-04-06 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置 |
| JP2022514171A (ja) * | 2018-10-19 | 2022-02-10 | ラム リサーチ コーポレーション | 半導体処理のためのチャンバ構成部品のインサイチュ保護被膜 |
| JP2024020348A (ja) * | 2015-03-17 | 2024-02-14 | アプライド マテリアルズ インコーポレイテッド | イオン-イオンプラズマ原子層エッチングプロセス及びリアクタ |
| US11920239B2 (en) | 2015-03-26 | 2024-03-05 | Lam Research Corporation | Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma |
| JP2024534361A (ja) * | 2021-09-14 | 2024-09-20 | アプライド マテリアルズ インコーポレイテッド | 高周波プラズマ処理チャンバ内の歪み電流の緩和 |
| US12163219B2 (en) | 2017-12-15 | 2024-12-10 | Lam Research Corporation | Ex situ coating of chamber components for semiconductor processing |
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| US7858155B2 (en) * | 2004-11-02 | 2010-12-28 | Panasonic Corporation | Plasma processing method and plasma processing apparatus |
| US8317970B2 (en) * | 2008-06-03 | 2012-11-27 | Applied Materials, Inc. | Ceiling electrode with process gas dispersers housing plural inductive RF power applicators extending into the plasma |
| JP5635001B2 (ja) * | 2008-09-26 | 2014-12-03 | ラム リサーチ コーポレーションLam Research Corporation | 結合リングをクロック回転させることによって調整可能な静電チャックとホットエッジリングとの間の熱的接触 |
| US8382999B2 (en) * | 2009-03-26 | 2013-02-26 | Applied Materials, Inc. | Pulsed plasma high aspect ratio dielectric process |
| US8578879B2 (en) * | 2009-07-29 | 2013-11-12 | Applied Materials, Inc. | Apparatus for VHF impedance match tuning |
| US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
| US9396908B2 (en) * | 2011-11-22 | 2016-07-19 | Lam Research Corporation | Systems and methods for controlling a plasma edge region |
| CN104024477B (zh) * | 2011-11-23 | 2016-05-18 | 朗姆研究公司 | 多区域气体注入上电极系统 |
| CN102789949B (zh) * | 2012-02-01 | 2015-06-24 | 中微半导体设备(上海)有限公司 | 一种等离子反应器 |
| US9673069B2 (en) * | 2012-07-20 | 2017-06-06 | Applied Materials, Inc. | High frequency filter for improved RF bias signal stability |
| KR102053720B1 (ko) | 2013-03-11 | 2019-12-09 | 삼성전자주식회사 | 플라즈마 진단방법 및 장치 |
| RU2626746C1 (ru) * | 2016-02-17 | 2017-07-31 | Федеральное Государственное Унитарное Предприятие "Всероссийский Научно-Исследовательский Институт Физико-Технических И Радиотехнических Измерений" (Фгуп "Вниифтри") | Коаксиальный измерительный резонатор с неизлучающим окном для ввода образца |
| US10026592B2 (en) * | 2016-07-01 | 2018-07-17 | Lam Research Corporation | Systems and methods for tailoring ion energy distribution function by odd harmonic mixing |
| US10748745B2 (en) * | 2016-08-16 | 2020-08-18 | Applied Materials, Inc. | Modular microwave plasma source |
| US10395896B2 (en) | 2017-03-03 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation |
| CN109216144B (zh) * | 2017-07-03 | 2021-08-06 | 中微半导体设备(上海)股份有限公司 | 一种具有低频射频功率分布调节功能的等离子反应器 |
| US10555412B2 (en) * | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| JP7481823B2 (ja) * | 2018-11-05 | 2024-05-13 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| US11804362B2 (en) * | 2018-12-21 | 2023-10-31 | Advanced Energy Industries, Inc. | Frequency tuning for modulated plasma systems |
| US11515123B2 (en) * | 2018-12-21 | 2022-11-29 | Advanced Energy Industries, Inc. | Apparatus and system for modulated plasma systems |
| US10720305B2 (en) * | 2018-12-21 | 2020-07-21 | Advanced Energy Industries, Inc. | Plasma delivery system for modulated plasma systems |
| KR102189323B1 (ko) | 2019-07-16 | 2020-12-11 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| US20220084794A1 (en) | 2020-09-16 | 2022-03-17 | Applied Materials, Inc. | Plasma chamber with a multiphase rotating modulated cross-flow |
| US20250224478A1 (en) * | 2022-05-13 | 2025-07-10 | Northeastern University | Subharmonic Tags for Localization, Ranging, and Navigation in GPS-Denied Environments |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004096066A (ja) * | 2002-07-12 | 2004-03-25 | Tokyo Electron Ltd | プラズマ処理装置及び可変インピーダンス手段の校正方法 |
| JP2006066905A (ja) * | 2004-07-30 | 2006-03-09 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
| JP2006345001A (ja) * | 2006-09-08 | 2006-12-21 | Tokyo Electron Ltd | プラズマエッチング方法及びプラズマエッチング装置 |
| JP2007005592A (ja) * | 2005-06-24 | 2007-01-11 | Tokyo Electron Ltd | プラズマ処理方法、高速プラズマエッチング装置 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02298024A (ja) | 1989-05-12 | 1990-12-10 | Tadahiro Omi | リアクティブイオンエッチング装置 |
| JPH0781187B2 (ja) | 1989-11-20 | 1995-08-30 | 治久 木下 | 真空プロセス装置 |
| JP2543642B2 (ja) * | 1991-01-18 | 1996-10-16 | アプライド マテリアルズ インコーポレイテッド | 高周波交流電気エネルギ―と相対的に低い周波数の交流電気的エネルギ―を有する、工作物を処理するためのシステムおよび方法 |
| US5900103A (en) | 1994-04-20 | 1999-05-04 | Tokyo Electron Limited | Plasma treatment method and apparatus |
| JP3162583B2 (ja) | 1994-09-30 | 2001-05-08 | 井上 泰宣 | 固体触媒の活性を高める方法および触媒素子 |
| TW580735B (en) | 2000-02-21 | 2004-03-21 | Hitachi Ltd | Plasma treatment apparatus and treating method of sample material |
| JP3377773B2 (ja) | 2000-03-24 | 2003-02-17 | 三菱重工業株式会社 | 放電電極への給電方法、高周波プラズマ発生方法および半導体製造方法 |
| JP3316490B2 (ja) | 2000-03-13 | 2002-08-19 | 三菱重工業株式会社 | 放電電極への給電方法、高周波プラズマ生成方法および半導体製造方法 |
| US6853141B2 (en) * | 2002-05-22 | 2005-02-08 | Daniel J. Hoffman | Capacitively coupled plasma reactor with magnetic plasma control |
| US6875366B2 (en) | 2000-09-12 | 2005-04-05 | Hitachi, Ltd. | Plasma processing apparatus and method with controlled biasing functions |
| JP3670206B2 (ja) | 2000-11-06 | 2005-07-13 | アルプス電気株式会社 | プラズマ処理装置又はプラズマ処理システムの性能評価方法、保守方法、性能管理システム、及び性能確認システム、並びにプラズマ処理装置 |
| JP2002246368A (ja) | 2001-02-14 | 2002-08-30 | Anelva Corp | ウェハー表面径方向均一プラズマを用いるウェハー処理システム |
| US6652713B2 (en) | 2001-08-09 | 2003-11-25 | Applied Materials, Inc. | Pedestal with integral shield |
| JP4417600B2 (ja) | 2001-12-11 | 2010-02-17 | 東京エレクトロン株式会社 | エッチング方法 |
| US6703080B2 (en) | 2002-05-20 | 2004-03-09 | Eni Technology, Inc. | Method and apparatus for VHF plasma processing with load mismatch reliability and stability |
| TWI283899B (en) | 2002-07-09 | 2007-07-11 | Applied Materials Inc | Capacitively coupled plasma reactor with magnetic plasma control |
| US7405521B2 (en) | 2003-08-22 | 2008-07-29 | Lam Research Corporation | Multiple frequency plasma processor method and apparatus |
| US7144521B2 (en) * | 2003-08-22 | 2006-12-05 | Lam Research Corporation | High aspect ratio etch using modulation of RF powers of various frequencies |
| US7838430B2 (en) | 2003-10-28 | 2010-11-23 | Applied Materials, Inc. | Plasma control using dual cathode frequency mixing |
| JP4704088B2 (ja) * | 2005-03-31 | 2011-06-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US20070246163A1 (en) | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Plasma reactor apparatus with independent capacitive and inductive plasma sources |
-
2007
- 2007-04-11 US US11/733,764 patent/US7879731B2/en not_active Expired - Fee Related
-
2008
- 2008-01-23 KR KR1020080007048A patent/KR100988704B1/ko not_active Expired - Fee Related
- 2008-01-25 SG SG200800721A patent/SG144875A1/en unknown
- 2008-01-28 EP EP08150700A patent/EP1953795A2/en not_active Withdrawn
- 2008-01-29 JP JP2008017173A patent/JP2008187179A/ja active Pending
- 2008-01-30 TW TW097103568A patent/TW200845090A/zh unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004096066A (ja) * | 2002-07-12 | 2004-03-25 | Tokyo Electron Ltd | プラズマ処理装置及び可変インピーダンス手段の校正方法 |
| JP2006066905A (ja) * | 2004-07-30 | 2006-03-09 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
| JP2007005592A (ja) * | 2005-06-24 | 2007-01-11 | Tokyo Electron Ltd | プラズマ処理方法、高速プラズマエッチング装置 |
| JP2006345001A (ja) * | 2006-09-08 | 2006-12-21 | Tokyo Electron Ltd | プラズマエッチング方法及びプラズマエッチング装置 |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017069209A (ja) * | 2013-02-12 | 2017-04-06 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置 |
| JP2015115216A (ja) * | 2013-12-12 | 2015-06-22 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US10283328B2 (en) | 2013-12-12 | 2019-05-07 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| US11315765B2 (en) | 2013-12-12 | 2022-04-26 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| JP2015162266A (ja) * | 2014-02-26 | 2015-09-07 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP2016046357A (ja) * | 2014-08-22 | 2016-04-04 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP7662747B2 (ja) | 2015-03-17 | 2025-04-15 | アプライド マテリアルズ インコーポレイテッド | イオン-イオンプラズマ原子層エッチングプロセス及びリアクタ |
| JP2024020348A (ja) * | 2015-03-17 | 2024-02-14 | アプライド マテリアルズ インコーポレイテッド | イオン-イオンプラズマ原子層エッチングプロセス及びリアクタ |
| US11920239B2 (en) | 2015-03-26 | 2024-03-05 | Lam Research Corporation | Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma |
| US12163219B2 (en) | 2017-12-15 | 2024-12-10 | Lam Research Corporation | Ex situ coating of chamber components for semiconductor processing |
| US12227837B2 (en) | 2017-12-15 | 2025-02-18 | Lam Research Corporation | Ex situ coating of chamber components for semiconductor processing |
| JP2024161438A (ja) * | 2018-10-19 | 2024-11-19 | ラム リサーチ コーポレーション | 半導体処理のためのチャンバ構成部品のインサイチュ保護被膜 |
| JP2022514171A (ja) * | 2018-10-19 | 2022-02-10 | ラム リサーチ コーポレーション | 半導体処理のためのチャンバ構成部品のインサイチュ保護被膜 |
| US12371781B2 (en) | 2018-10-19 | 2025-07-29 | Lam Research Corporation | In situ protective coating of chamber components for semiconductor processing |
| JP2024534361A (ja) * | 2021-09-14 | 2024-09-20 | アプライド マテリアルズ インコーポレイテッド | 高周波プラズマ処理チャンバ内の歪み電流の緩和 |
| JP7758861B2 (ja) | 2021-09-14 | 2025-10-22 | アプライド マテリアルズ インコーポレイテッド | 高周波プラズマ処理チャンバ内の歪み電流の緩和 |
Also Published As
| Publication number | Publication date |
|---|---|
| US7879731B2 (en) | 2011-02-01 |
| TW200845090A (en) | 2008-11-16 |
| EP1953795A2 (en) | 2008-08-06 |
| US20080182416A1 (en) | 2008-07-31 |
| KR100988704B1 (ko) | 2010-10-18 |
| KR20080071492A (ko) | 2008-08-04 |
| SG144875A1 (en) | 2008-08-28 |
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