SG144875A1 - Improving plasma process uniformity across a wafer by apportioning power among plural vhf sources - Google Patents

Improving plasma process uniformity across a wafer by apportioning power among plural vhf sources

Info

Publication number
SG144875A1
SG144875A1 SG200800721A SG200800721A SG144875A1 SG 144875 A1 SG144875 A1 SG 144875A1 SG 200800721 A SG200800721 A SG 200800721A SG 200800721 A SG200800721 A SG 200800721A SG 144875 A1 SG144875 A1 SG 144875A1
Authority
SG
Singapore
Prior art keywords
wafer
power
parameter
process uniformity
sources
Prior art date
Application number
SG200800721A
Other languages
English (en)
Inventor
Kenneth S Collins
Hiroji Hanawa
Kartik Ramaswamy
A Buchberger Douglas Jr
Shahid Rauf
Kallol Bera
Lawrence Wong
Walter R Merry
Matthew L Miller
Steven C Shannon
Andrew Nguyen
James P Cruse
James Carducci
Troy S Detrick
Subhash Deshmukh
Jennifer Y Sun
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG144875A1 publication Critical patent/SG144875A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
SG200800721A 2007-01-30 2008-01-25 Improving plasma process uniformity across a wafer by apportioning power among plural vhf sources SG144875A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US89863207P 2007-01-30 2007-01-30
US11/733,764 US7879731B2 (en) 2007-01-30 2007-04-11 Improving plasma process uniformity across a wafer by apportioning power among plural VHF sources

Publications (1)

Publication Number Publication Date
SG144875A1 true SG144875A1 (en) 2008-08-28

Family

ID=39323943

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200800721A SG144875A1 (en) 2007-01-30 2008-01-25 Improving plasma process uniformity across a wafer by apportioning power among plural vhf sources

Country Status (6)

Country Link
US (1) US7879731B2 (enExample)
EP (1) EP1953795A2 (enExample)
JP (1) JP2008187179A (enExample)
KR (1) KR100988704B1 (enExample)
SG (1) SG144875A1 (enExample)
TW (1) TW200845090A (enExample)

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US9673069B2 (en) * 2012-07-20 2017-06-06 Applied Materials, Inc. High frequency filter for improved RF bias signal stability
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KR102053720B1 (ko) 2013-03-11 2019-12-09 삼성전자주식회사 플라즈마 진단방법 및 장치
JP6574547B2 (ja) 2013-12-12 2019-09-11 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2015162266A (ja) * 2014-02-26 2015-09-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2016046357A (ja) * 2014-08-22 2016-04-04 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10475626B2 (en) * 2015-03-17 2019-11-12 Applied Materials, Inc. Ion-ion plasma atomic layer etch process and reactor
US9828672B2 (en) 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
RU2626746C1 (ru) * 2016-02-17 2017-07-31 Федеральное Государственное Унитарное Предприятие "Всероссийский Научно-Исследовательский Институт Физико-Технических И Радиотехнических Измерений" (Фгуп "Вниифтри") Коаксиальный измерительный резонатор с неизлучающим окном для ввода образца
US10026592B2 (en) * 2016-07-01 2018-07-17 Lam Research Corporation Systems and methods for tailoring ion energy distribution function by odd harmonic mixing
US10748745B2 (en) * 2016-08-16 2020-08-18 Applied Materials, Inc. Modular microwave plasma source
US10395896B2 (en) 2017-03-03 2019-08-27 Applied Materials, Inc. Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation
CN109216144B (zh) * 2017-07-03 2021-08-06 中微半导体设备(上海)股份有限公司 一种具有低频射频功率分布调节功能的等离子反应器
US10760158B2 (en) 2017-12-15 2020-09-01 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
US10555412B2 (en) * 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
KR20250110938A (ko) 2018-10-19 2025-07-21 램 리써치 코포레이션 반도체 프로세싱을 위한 챔버 컴포넌트들의 인 시츄 (in situ) 보호 코팅
JP7481823B2 (ja) * 2018-11-05 2024-05-13 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
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US10720305B2 (en) * 2018-12-21 2020-07-21 Advanced Energy Industries, Inc. Plasma delivery system for modulated plasma systems
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US12106938B2 (en) * 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
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Also Published As

Publication number Publication date
US7879731B2 (en) 2011-02-01
TW200845090A (en) 2008-11-16
EP1953795A2 (en) 2008-08-06
US20080182416A1 (en) 2008-07-31
KR100988704B1 (ko) 2010-10-18
JP2008187179A (ja) 2008-08-14
KR20080071492A (ko) 2008-08-04

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