KR100988704B1 - 다수의 ｖｈｆ 소스들에 전력을 할당함으로써 웨이퍼에 대한 플라즈마 프로세스 균일성을 증가시키는 방법 - Google Patents

다수의 ｖｈｆ 소스들에 전력을 할당함으로써 웨이퍼에 대한 플라즈마 프로세스 균일성을 증가시키는 방법 Download PDF

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KR100988704B1
KR100988704B1 KR1020080007048A KR20080007048A KR100988704B1 KR 100988704 B1 KR100988704 B1 KR 100988704B1 KR 1020080007048 A KR1020080007048 A KR 1020080007048A KR 20080007048 A KR20080007048 A KR 20080007048A KR 100988704 B1 KR100988704 B1 KR 100988704B1
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frequency
plasma
vhf
plasma ion
power
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KR20080071492A (ko
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케네쓰 에스. 콜린즈
히로지 하나와
칼티크 라마스와미
더글러스 에이. 주니어. 부치버거
샤히드 라우프
칼롤 베라
로렌스 웅
왈터 알. 메리
매튜 엘. 밀러
스티븐 씨. 샤논
앤드류 뉴옌
제임스 피. 크루즈
제임스 카두치
트로이 에스. 데트릭
수브하시 데쉬무크
제니퍼 와이. 선
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020080007048A 2007-01-30 2008-01-23 다수의 ｖｈｆ 소스들에 전력을 할당함으로써 웨이퍼에 대한 플라즈마 프로세스 균일성을 증가시키는 방법 Expired - Fee Related KR100988704B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US89863207P 2007-01-30 2007-01-30
US60/898,632 2007-01-30
US11/733,764 2007-04-11
US11/733,764 US7879731B2 (en) 2007-01-30 2007-04-11 Improving plasma process uniformity across a wafer by apportioning power among plural VHF sources

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KR20080071492A KR20080071492A (ko) 2008-08-04
KR100988704B1 true KR100988704B1 (ko) 2010-10-18

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KR1020080007048A Expired - Fee Related KR100988704B1 (ko) 2007-01-30 2008-01-23 다수의 ｖｈｆ 소스들에 전력을 할당함으로써 웨이퍼에 대한 플라즈마 프로세스 균일성을 증가시키는 방법

Country Status (6)

Country Link
US (1) US7879731B2 (enExample)
EP (1) EP1953795A2 (enExample)
JP (1) JP2008187179A (enExample)
KR (1) KR100988704B1 (enExample)
SG (1) SG144875A1 (enExample)
TW (1) TW200845090A (enExample)

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CN102789949B (zh) * 2012-02-01 2015-06-24 中微半导体设备(上海)有限公司 一种等离子反应器
US9673069B2 (en) * 2012-07-20 2017-06-06 Applied Materials, Inc. High frequency filter for improved RF bias signal stability
JP2017069209A (ja) * 2013-02-12 2017-04-06 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置
JP6574547B2 (ja) 2013-12-12 2019-09-11 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2015162266A (ja) * 2014-02-26 2015-09-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2016046357A (ja) * 2014-08-22 2016-04-04 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10475626B2 (en) * 2015-03-17 2019-11-12 Applied Materials, Inc. Ion-ion plasma atomic layer etch process and reactor
US9828672B2 (en) 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
RU2626746C1 (ru) * 2016-02-17 2017-07-31 Федеральное Государственное Унитарное Предприятие "Всероссийский Научно-Исследовательский Институт Физико-Технических И Радиотехнических Измерений" (Фгуп "Вниифтри") Коаксиальный измерительный резонатор с неизлучающим окном для ввода образца
US10026592B2 (en) * 2016-07-01 2018-07-17 Lam Research Corporation Systems and methods for tailoring ion energy distribution function by odd harmonic mixing
US10748745B2 (en) * 2016-08-16 2020-08-18 Applied Materials, Inc. Modular microwave plasma source
US10395896B2 (en) 2017-03-03 2019-08-27 Applied Materials, Inc. Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation
CN109216144B (zh) * 2017-07-03 2021-08-06 中微半导体设备(上海)股份有限公司 一种具有低频射频功率分布调节功能的等离子反应器
US10760158B2 (en) 2017-12-15 2020-09-01 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
US10555412B2 (en) * 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
WO2020081303A1 (en) * 2018-10-19 2020-04-23 Lam Research Corporation In situ protective coating of chamber components for semiconductor processing
JP7481823B2 (ja) * 2018-11-05 2024-05-13 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US10720305B2 (en) * 2018-12-21 2020-07-21 Advanced Energy Industries, Inc. Plasma delivery system for modulated plasma systems
US11804362B2 (en) * 2018-12-21 2023-10-31 Advanced Energy Industries, Inc. Frequency tuning for modulated plasma systems
US11515123B2 (en) * 2018-12-21 2022-11-29 Advanced Energy Industries, Inc. Apparatus and system for modulated plasma systems
KR102189323B1 (ko) 2019-07-16 2020-12-11 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US20220084794A1 (en) 2020-09-16 2022-03-17 Applied Materials, Inc. Plasma chamber with a multiphase rotating modulated cross-flow
US12106938B2 (en) * 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
WO2023220468A1 (en) * 2022-05-13 2023-11-16 Northeastern University Subharmonic tags for localization, ranging, and navigation in gps-denied environments

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KR920015968A (ko) * 1991-01-18 1992-08-27 제임스 조셉 드롱 Uhf/vhf와 rf 3극 진공관 공급원을 사용하는 플라즈마 반응기 및 플라즈마 발생 방법
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US9754770B2 (en) 2013-03-11 2017-09-05 Samsung Electronics Co., Ltd. Method and apparatus of diagnosing plasma in plasma space

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US20080182416A1 (en) 2008-07-31
US7879731B2 (en) 2011-02-01
JP2008187179A (ja) 2008-08-14
EP1953795A2 (en) 2008-08-06
KR20080071492A (ko) 2008-08-04
TW200845090A (en) 2008-11-16
SG144875A1 (en) 2008-08-28

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