TW200836304A - Semiconductor package and fabrication method thereof - Google Patents

Semiconductor package and fabrication method thereof Download PDF

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Publication number
TW200836304A
TW200836304A TW096150602A TW96150602A TW200836304A TW 200836304 A TW200836304 A TW 200836304A TW 096150602 A TW096150602 A TW 096150602A TW 96150602 A TW96150602 A TW 96150602A TW 200836304 A TW200836304 A TW 200836304A
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TW
Taiwan
Prior art keywords
semiconductor
film structure
multilayer film
wafer
semiconductor package
Prior art date
Application number
TW096150602A
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English (en)
Other versions
TWI384593B (zh
Inventor
Gi-Jo Jung
In-Soo Kang
Jong-Heon Kim
Seung-Dae Baek
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Nepes Corp
Nepes Pte Ltd
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Publication of TW200836304A publication Critical patent/TW200836304A/zh
Application granted granted Critical
Publication of TWI384593B publication Critical patent/TWI384593B/zh

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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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Description

200836304 九、發明說明： 【發明所屬之技術領域】 本發明係關於半導體封裝與其製造方法，而更明確 地，係關於輕薄短小的半導體封裝，其中直接將半導體晶 片接合於多層薄膜結構而不需使用任何封裝用之基材；以 及其在晶圓層級（wafer level)或載具層級丨^丨）的 製造方法。 【先前技術】 半導體元件能夠藉由許多整合在單一基材中的電子元 件實現不同的運作。為此㈣，已經使用多種高技術製造 、、已尨發展出將半導體元件製造中的各個元件微型化 以形成較小尺寸的部件。 曰發展半導體疋件的封裝技術已經提出了高整合與高容 量的半導體系統。自打線接合㈤“ —g)轉變成覆晶凸 塊植球（fiip-ehip bumping)之半導體封裝技術能夠實現符 合市場需求之晶片尺寸。 第1圖係描述傳統球閘陣列（ball grid array，BGAm 裝1〇結構之實例的剖面圖。個別的半導體晶片14藉由結 層20接口至封裝用之基材12的一側，且半導體晶片的 一部份藉由t、線16而電性連接至基材的一冑分。許多焊錫 凸塊1 8开/成在基材的底部表面上，而覆蓋半導體晶片與電 線之保護板組（proteetlng m〇lding)3〇則形成在基材的頂部 表面上。 5 200836304 上所述，傳統技柄由* 片。太u 夜術中需要預定厚度之基材來封裝半 吾半導體曰 面μ & -曰9片運作時，訊號係由形成在基材之 回上的電緩、畜、 、、過電性互連結構傳送至形成在基材之 _上的焊锡凸堍 ^ 1§,, 尾。然而，由於半導體元件的發展， 择貝地改善半 _ 結椹且° ¥體元件的運作速度。接著’當封裝中 ^ . ’、、、長的時’那麼高速運作或高容量訊號處
5處會延遲或M
如 導體晶 頂部表 底部表 已經明 的互連 理時訊 的需求 再 封裝之 或輕薄 再 統化封 服里失真，因此無法滿足不同應用元件 〇 由於封農需要預定厚度之基材，所以減少整體 寸與厚度將有所限制。因此，基材變成發展小型 的通訊裝置或電子裝置之阻礙。 者’傳統BGA封裝技術在實現不同堆疊之封裝或系 農中有所限制且無法有效地大量生產。 【發明内容】 因此’本發明係關於提供新穎的BGA封裝，其厚度非 常薄且結構非常簡單。 本發明之另一態樣係提供BGA封裝，其具有短的電性 互連長度適合高速運作。 本發明之另一態樣係提供BG A封裝，其易於堆疊與安 裝在表面上。 本發明之另一態樣係提供製造BGA封裝的方法，其適 合大量生產且處理簡單並明顯減少錯誤率。 本發明其他目的與特徵將於下更詳細地呈現： 200836304 依照本發明之一態樣，本發明提供一半導體封裝，其 包括：多層薄膜結構，其包含複數個介電層與至少一或多 個重分佈層；半導體晶片，位於多層薄膜結構之一側並電 性連接至重分佈層；以及多個焊錫凸塊，形成在多層薄膜 結構之另一側。 半導體晶片可包含至少一或多個重分佈層或可不具任 何重分佈層而接合至多層薄膜結構。半導體晶片可藉由凸
塊或電線而電性連接至多層薄膜結構，或即將堆疊之二或 多個半導體晶片可置於多層薄膜結構之一側。當複數個半 導體晶片位於多層薄膜結構上時，一半導體晶片可藉由凸 塊而電性連接至多層薄膜結構且其他半導體晶片可藉由電 線而電性連接至多層薄膜結構。 半導體封裝更包含一模組部件，其形成在多層薄膜結 構的一側且位於半導體晶片的側面方向上。可低於半導體 晶片之頂部表面而形成模組部件以使半導體封裝的整體厚 度最小化。 多層薄膜結構可作為半導體封裝之基材以實現覆晶封 裝。由於在晶圓層級或載具層級可同時形成複數個封裝， 因此處理係簡單的且適合大量生產。 多層薄膜結構可執行額外的功能因為其中嵌入了薄膜 被動元件。薄膜被動元件包含例如電容器、電感器與電阻 器至少一者。 多層薄膜結構之重分佈層與焊錫凸塊之間形成至少一 金屬層，且該金屬層包括電極襯墊與凸塊下金屬（under 7 200836304 bump metal) o 根據本發明之半導體封裝可實現成為非常輕薄短小的 封裝。再者，可非常輕易地堆疊複數個這些半導體封裝。
明確地說，藉由電性連接與垂直設置二或更多半導體 封裝與焊錫凸塊，可提供堆疊之半導體封裝，各個封裝包 括多層薄膜結構，其包含複數個介電層與至少一或多個重 分佈層；半導體晶片，位於多層薄膜結構之一側並電性連 接至重分佈層；以及多個焊錫凸塊，形成於多層薄膜結構 之另一側。此實例中，一 BGA封裝可透過焊錫凸塊而電性 連接至另一 BGA封裝之多層薄膜結構的一側。 再者，可藉由垂直堆疊BGA封裝或水平安裝BGA封 裝於不同的印刷電路板而實現系統化之封裝。 根據本發明之輕薄短小的堆疊封裝可讓通訊裝置、顯 示器與其他不同電子裝置變小與輕薄並有助於提高應用封 裝之產品的競爭力。 根據本發明之另一態樣，本發明提供製造半導體封裝 之方法，其包括以下步驟··形成多層薄膜結構，其包含複 數個介電層與至少一或多個重分佈層；將半導體晶片配置 在多層薄膜結構之一側並將半導體晶片電性連接至重分佈 層；以及在多層薄膜結構之另一側形成多個焊錫凸塊。 較佳.地，可在晶圓層級或載具層級形成多層薄膜結 構。在將多層薄膜結構電性連接至半導體晶片且形成焊錫 凸塊之後，可將多層薄膜結構分成各個封裝以簡化整體處 理。 δ 200836304 在晶圓層級形成半導體晶 特性(經由晶圓層級的半導體曰H 僅有具有優秀運作 片接合至多層薄膜結構，1二广試所挑選)的半導體晶 錯誤率來提供高品質的封裝 7:农大地減少半導體晶片之 再者，藉由利用微米級的超 之基材)製造之封裝係使封裝厚声：、·，°構(不具任何封裝用 成模組部件以補充多層薄：取J化並藉由部分地形 迨半導體封裝之方法更包括 再者，製
尨键儿s 任日日圓層級形成半導體日曰H 後薄化晶圓背面之步驟， 日日片之 ^ a ^ U汽現超級薄化之BGA封| 多層薄膜結構在晶圓或載且 对裝。 t 取/、上t成結合層並名έ士人 上形成凸塊下金屬、電極福 m δ層 詩曰H W , 襯塾、介電層與重分佈層。將主 …片電性連接至多層薄膜結構之後，自將. 移除晶圓或載具。 s ’專膜結構 根據本發明，在晶圓禺 44 # ,, 9、，及或载具層級同時製造巷盔义 封裝之後將其分成各個封裝，盆 數個 晶片係彼此連接。因此：夕“、結構與半導體 此根據本發明之半導體封F、慈人 量生產並可減少製造成本。 、適合大 【實施方式】 實施例）於下更 現將參照附圖（其中顯示本發明之較佳 完整地描述本發明。 !〇〇的 30接合 剖面 至較 第2圖係根據本發明實施例之b g a封裝 圖。BGA封裝100為薄的，其中半導體晶片t 低位置之多層薄膜結構110的頂部表面。
200836304 多層薄膜結構11 0具有包括介電層與重分 膜形式。該圖示中，為了清晰之便而誇大多層 厚度。然而，其實際厚度係低於亳米且較佳係 形成於多層薄膜結構11 0内之重分佈層11 係藉由傳導凸塊 120而電性連接至形成於多 11 0之頂部表面上的半導體晶片1 3 0。半導體晶 含重分佈層1 3 4。此實例中，重分佈層1 3 4之 傳導凸塊1 20以電性連接至多層薄膜結構。 多層薄膜結構1 1 0之底部表面上形成至少 1 2 5，以便多層薄膜結構1 1 0可裝設於外部電路 接至另一封裝。再者，如同描述般在多層薄膜 頂部表面上且位於半導體晶片1 3 0之側面方向 成模組部件1 40，以補充多層薄膜結構11 0之摘 模組部件1 40僅部分地形成在半導體晶片1 3 0 中且模組部件140之高度不會超過半導體晶片 表面，以實現非常薄且大體上近似於半導體 BGA封裝。再者，由於模組部件並不形成於半導 之頂部表面且暴露於外，當半導體晶片130在 時可有利地將熱分佈到外側。 再者，在未形成模組部件1 40之半導體晶 部表面上，可額外地附加熱能散佈器（未顯示） 體晶片130的熱能散佈。 根據本發明實施例之BGA封裝不僅為輕旁 佈層之超薄 薄膜結構之 處於微米等 .6的一部分 層薄膜結構 片130可包 一部分接觸 一焊錫凸塊 上或電性連 結構1 1 0之 中部分地形 I；械支稽力。 之側面方向 1 3 0之頂部 晶片厚度的 -體晶片1 3 0 高速下運作 片1 3 0的頂 以改善半導 |短小，且許 10
200836304 多JBGA封裝係易於水平裝置在外部電路基材 疊。第3圖描述堆疊之半導體封裝200的實例 封裝I與下部封裝II係藉由銲錫凸塊直接接合 堆疊用之額外基材。上部封裝I之焊錫凸塊係 下部封裝II之多層薄膜結構的一側，以明顯地 封裝的厚度。 舉例來說，層疊封裝（package on package， 堆疊封裝係應用於需要高容量記憶體的電子裝 置，以更加地提高消費者產品的可靠度與價值 再者，根據本發明之BGA封裝的結構可能 半導體晶片堆疊其中之多層薄膜結構。參照第 半導體晶片320與33 0垂直堆疊以在多層薄膜 接合在一起。下部半導體晶片320係透過銲錫 電性連接至多層薄膜結構，且上部半導體晶片 電線3 3 5而電性連接至多層薄膜結構。除此之 上部與下部半導體晶片可藉由區別堆疊之半導 小而透過焊錫凸塊覆晶式接合至一多層薄膜 者，三或更多之半導體晶片可堆疊於一多層薄 各個堆疊之半導體晶片可藉由結合層3 25而彼 根據本發明實施例之BGA封裝係在晶圓 層級加以製造，以進行薄化並適合大量生產。 第5圖到第20圖描述根據本發明實施例 封裝的處理。第5圖到第9圖中描述了製造作 之多層薄膜結構的製程。 上或垂直堆 ，其中上部 且不具任何 電性連接至 減少堆疊之 PoP)形式的 置或通訊裝 〇 係一或多個 4圖，將兩 結構3 1 0上 凸塊3 1 2而 3 3 0係透過 外，所有的 體晶片的大 結構上。再 膜結構上。 此接合。 層級或載具 來製造BGA 為封裝基材 11 200836304 為了形成多層薄膜結構，準備了晶圓或载具〗u。形 成薄膜結構並移除載具（在完成製程之後）的結合層丨〗2係 形成於载具1 1 1之頂部表面。凸塊下金屬i丨3係形成於結 合層112上（第5圖）。凸塊下金屬113可包括金屬或合金 形成之一或多層。 凸塊下金屬113可形成於一層中或者二或更多層之多 層結構中，該層係選自下列之一或多個物質：諸如銅（Cu)、 銅合金（Cu-alloy)、鎳（Ni)、鎳合金（Ni-aU〇y)、鎢（w)、鎢 合金（W-alloy)、鈦（Ti)、鈦合金（Ti-all〇y)、鋁（A1)、鋁合 金（Al-alloy)、鉻（Cr)、鉻合金（Cr_all〇y)、金（Au)、金合金 (Au-alloy)、鈀（Pd)、鈀合金（pd_all〇y)、銻（Sb)、銻合金 (Sb-alloy)、銦（In)、銦合金（In-all〇y)、麵（Bi)、鉍合金 (Bi-alloy)、鉑（Pt)與鉑合金（pt_all〇y)。 在凸塊下金屬113之頂部表面的一部分上形成連接銲 錫凸塊之電極襯墊11 4(第6圖），且形成暴露電極襯墊U4 之第一介電層115(第7圖）。形成第一介電層115之後，藉 由部分餘刻來暴路電極襯墊。由於執行用來暴露電極襯墊 11 4之光阻塗覆處理、暴露處理與部份蝕刻處理係熟悉技 •術之人士所習知的，因此不需要呈現詳細之描述。 重分佈層11 6係部份地形成於第一介電層丨^之頂部 表面上（第8圖），且形成第二介電層117以部分地暴露重 分佈層116(第9圖）。 雖然為了清楚描述而僅描述晶圓或载具^^上之一單 獨多層薄膜結構，但在實際的情況中，在晶圓層級或载具 12
200836304 層級同時形成複數個封裝之多層薄膜結構，且在完成最 處理之後將其分成個別的封裝。 由於係在晶圓層級或載具層級形成多層薄膜結構， 以易於調整整體厚度與尺寸因此可能製造輕薄且小型 BGA封裝。再者，由於電極襯墊至鐸錫凸塊之互連（以 性連接至外部）的長度非常短，因此可避免高速運作時的 號延遲或失真。 第1 0圖到第1 3圖中描述在晶圓層級製造半導體晶 的處理。 準備好在晶圓層級製備之半導體晶片 1 3 0。雖然複 個半導體晶片1 3 0形成於晶圓上，但為了清晰之便僅在 示中描述單一晶片。舉例來說，半導體晶片1 3 0内可形 多個薄膜元件（未顯示），諸如電晶體、二極體與電線。 導體晶片可為記憶體或邏輯電路。 在半導體晶片1 3 0之頂部表面的一部分上形成電極 墊131，且形成暴露該電極襯墊之第一介電層 132(第 圖）。隨後，形成電性接觸電極襯墊 1 3 1 之凸塊下金 1 3 3 (第1 1圖）且接著在凸塊下金屬 1 3 3上形成重分佈 13 4。部分地蝕刻凸塊下金屬133與重分佈層134以形成 案（第1 2圖）。 最終，在重分佈層1 3 4上形成第二介電層1 3 5，以 部分地暴露重分佈層134之一部分。 本發明中，半導體晶片130可包含重分佈層134, 其在描述於後之另一實施例中可不包含重分佈層1 3 4。 終 所 的 電 訊 片 數 圖 成 半 槪 10 屬 層 圖 便 但 13 200836304 晶選 lug. bb 另 杏 個 ， 成後 分之 被驗 在試 ο 的 3 1 級 片 層 晶 圓 體晶 導。 半驗 之試 成的 形級 下 層 級圓 層 晶 圓 行 晶進 在前 之 片 前 之 塊 凸 〇 錫 裝銲 封成 43 於形 用， 片後 晶之 之或 誤前 錯之 具試 不測 且的 性片 特晶 作體 運導 良半 優在 有 具 晶 體 導 半 少 減 地 幅 大 以 S 處 化 薄 圓 晶 行 執 上 級。 層度 1厚 晶之 在片 第 第 到 圖 4 ο 11 H* 構 結 膜 薄 層 片 晶 體 導 半 將 述 描 中 。 圖理 ο 處 2 的 多 至 合 接 將透過測試所挑選之具有優良運作特性的半導體晶片 130’在晶圓層級或載具層級上配置於多層薄膜結構 110’ 中（第1 4圖）。在多層薄膜結構11 0’之重分佈層1 1 6的一暴 露部分上形成傳導凸塊120或在半導體晶片130’之重分佈 層的一暴露部分上形成傳導凸塊，以將半導體晶片1 3 0 ’電 性連接至多層薄膜結構11 〇 ’（第1 5圖）。 完成其之連接後，移除用來形成多層薄膜結構11 〇’之 載具（或晶圓）111 (第1 6圖）。接著，部分地移除多層薄膜結 構11 0’之底部表面的凸塊下金屬11 3 (第1 7圖）。舉例來 說，凸塊下金屬113可由二或更多金屬層113a與113b所 構成。藉由保存電性連接至重分佈層11 6之部分周圍而部 份地移除凸塊下金屬11 3。第1 8圖係形成銲錫凸塊之區域 X的放大圖，其顯示重分佈層116、電極襯墊114與凸塊 下金屬之局部層U3b(形成銲錫凸塊之區域周圍）所形成的 多層結構。 接著，在多層薄膜結構之一側上且位於半導體晶片之 14 200836304 側面方向中部份地形成模組部件1 40(第1 9圖）。可在自多 層薄膜結構移除載具（或晶圓）1 1 1之前形成模組部件1 4 0。 最終，形成銲錫凸塊1 2 5以接觸殘留在多層薄膜結構 1 1 0 ’之底部表面上的凸塊下金屬 1 1 3，以完成本發明實施 例之BGA封裝（第20圖）。形成在凸塊下金屬113上之焊 錫凸塊可藉由植球（ball attaching)、電鐘、無電鑛覆、印 刷、錢鐘等方法而加以形成。
根據本發明之B G A封裝中，不像上述之實施例，位於 多層薄膜結構中之半導體晶片可能不包含重分佈層。 第2 1圖係根據本發明另一實施例之BGA封裝結構 400的剖面圖，其中不包含重分佈層之半導體晶片430係 藉由銲錫凸塊412而連接至多層薄膜結構410。 根據本發明另一實施例之BGA封裝500中，半導體晶 片5 3 0係藉由電線5 3 5而電性連接至多層薄膜結構5 1 0， 如第22圖中所示。此實例中，結合層525係形成在半導體 晶片 5 3 0之底部表面上以接合至多層薄膜結構 5 1 0之一 側。 第 23圖係根據本發明另一實施例之BGA封裝結構 600的剖面圖，其中薄膜元件係嵌入多層薄膜結構中。舉 例來說，薄膜元件可包含被動式元件，諸如電感器6 1 2或 電容器6 1 4。可以相同方式將包含薄膜元件之多層薄膜結 構應用在第2圖至第4圖之BGA封裝。 第24圖到第31圖描述藉由將不包含重分佈層之半導 體晶片應用於多層薄膜結構來製造BGA封裝之處理。 15 200836304 第24圖之多層薄膜結構中，在載具（或晶圓）511上形 成結合層512與凸塊下金屬513之後，接連堆疊電極襯墊 514、第一介電層 515、第一重分佈層 516與第二介電層 5 1 7。此結構相似於上述實施例中（第 9圖）的多層薄膜結 構，其中形成有第二介電層。
其中形成有第一重分佈層516之多層薄膜結構中，在 載具層級或晶圓層級上形成第二重分佈層5 1 8以部分地連 接至第一重分佈層516(第25圖），且形成第三介電層519 以部分地暴露第二重分佈層51 8(第26圖）。 接著，將在晶圓層級製造且之後通過測試而挑選之半 導體晶片5 3 0接合至多層薄膜結構的頂部表面（第27圖）。 對於半導體晶片 530之接合而言，可使用額外之結合層 525。 接著，半導體晶片530之一部分藉由電線535而電性 連接至多層薄膜結構之第二重分佈層 518的暴露部分（第 2 8圖）。接著，移除接合至多層薄膜結構5 1 0之底部表面 的載具（或晶圓）5 1 1並持續部份地移除多層薄膜結構之底 部表面的凸塊下金屬513(第29圖）。 接著，在多層薄膜結構510之頂部表面與半導體晶片 5 30上形成模組部件540以覆蓋電線53 5(第30圖）。 最終，形成銲錫凸塊527以連接殘留於多層薄膜結構 之底部表面的凸塊下金屬 5 1 3，好完成根據本發明實施例 之BGA封裝（第31圖）。 本發明中，舉例來說，第一介電層、第二介電層或第 16 200836304 二介電層可由介電材質 斤構成，諸如聚醯亞脸 Ώ 化矽、氮化矽等等， 胺、BCB、氧 隹^ 而重分佈層可由諸如鋼、么t 等材質所構成。然而， >、鋁、鎢 M , 電層與重分佈層可由 構成，且本發明並 J由其他材質所 卜叹於上述之材質。 如上所述，根播士 據本發明，多層薄膜姓 封裝之基材並實現不Λ s專膜，、·。構可作為半導體 s 具任何額外基材之輕薄短丨# Ώ
封裝。再者，可名曰同 ，寻短小的BGA 梦十 日日圓層級或载具層級同時开彡也、台 裝以間化處理且適人 野开/成複數個封 0%大量生產。異去，* 形成複數個半導體晶片 晶圓層級同時 (ii B « 喪，僅有那些具有優_ (透過晶圓層級之半 力後良運作特性 接合至多層薄膜結構，…二”體-片選擇性地 誤专ΛΑ - 乂提供取大地減少半蓬鞅曰 誤率的高品質封裝產Ό ^ ^ ^ 牛V體晶片之錯 之簿蹬ϋ 。多層薄膜結構能夠執杆沱 < 4膜破動式元件 J執仃嵌入其中 疊或水孚驻耍 卜功能。再者’將Bga封穿番士 及戎水千裝置在 玎裝垂直堆 桐姑4* 的印刷電路板上以實現系絲Λ 根據本發明之輕 糸、為化封裴。 复仙 ’專小的BGA封裝讓通訊裝置、黠一 Π的電子裝置變小與益與 封裝之產品的競爭力。 有助於“應用BGa 已經利用較佳之示範實施例描述 理解本發明之釔图 “'、：而，可以 之軛圍不限於所揭露之實施例。相 發明之範圍包括在熟悉技術人士之能 ，預期 替換配置（利用目‘ p 4 t # 力内的不同修改逝 給… 或未來技術與等效物）。因此 申凊專利範圍最廣之解釋以便其包人 應 與相似之配置。 s有上述之修改 17 200836304 【圖式簡單說明】 熟悉技術之人士可藉由詳細描述的較佳實施例並參照 附圖而更加理解本發明上述與其他之特徵與優點： 第1圖係傳統BGA封裝結構的剖面圖； 第2圖係根據本發明實施例之半導體封裝結構的剖面 圖； 第3圖係根據本發明之一堆疊半導體封裝結構的剖面
第4圖係根據本發明之另一堆疊半導體封裝結構的剖 面圖； 第5圖到第9圖係根據本發明實施例描述在晶圓層級 或載具層級製造多層薄膜結構之處理的剖面圖； 第1 0圖到第1 3圖係根據本發明實施例描述在晶圓層 級製造半導體晶片之處理的剖面圖； 第1 4圖到第20圖係根據本發明實施例描述製造半導 體封裝之處理的剖面圖； Φ 第21圖係根據本發明之另一實施例的半導體封裝結 構之剖面圖； 第 22圖係根據本發明之另一實施例的半導體封裝結 ^ 構之剖面圖； 第23圖係根據本發明之另一實施例的半導體封裝結 構之剖面圖；及 第24圖到第3 1圖係根據本發明之另一實施例描述製 造半導體封裝之處理的剖面圖。 18 200836304 【主要元件符號說明】 10、 100 ^ 400、 500、 600 BGA封裝 12 基材 14、 130、 13 0、 430、 530 半導 體晶片 16、 3 3 5 ^ 5 3 5 > 635 電線 18 ^ 125、 3 12、 3 15〜 412、 527 焊錫凸 塊 20 > 112、 325、 512、 525、 625 結合層 30 保護模組 110 、110, 、310 、410 、510 ' 610 多層 薄膜 結 構 111 、511 載具 113 -133 ' 513 凸塊 113a l、113b 金 屬層 114 > 13卜 514 電極 115 、132 、515 第一 介電 層 116 、134 、416 重分 佈層 117 、135 > 517 第二 120 傳導 凸塊 140 、540 模組部件 200 半導 體封裝 320 下部 半導 體 晶片 330 上部 半導體晶片 516 第一 重分 佈 層 518 第二 重分佈層 5 19 第三 介電 層 612 電感 器 614 電容 器 19

Claims (1)

  1. 200836304 十、申請專利範圍： 1. 一種半導體封裝，其至少包含： 一多層薄膜結構，其包含複數個介電層與. 重分佈層； 一半導體晶片，位於該多層薄膜結構之一-至該重分佈層；及 一銲錫凸塊，形成在該多層薄膜結構之另 2 ·如申請專利範圍第1項所述之半導體封裝 體晶片包括一重分佈層。 3 .如申請專利範圍第1項所述之半導體封裝 體晶片係藉由一凸塊而電性連接至該多層 4. 如申請專利範圍第1項所述之半導體封裝 φ 體晶片係藉由一電線而電性連接至該多層 5. 如申請專利範圍第1項所述之半導體封裝 . 組部件（molding part)，形成在該多層薄膜， 並位於該半導體晶片之一側面方向中。 6. 如申請專利範圍第5項所述之半導體封裝 部件係以低於該半導體晶片之頂部表面而 少一或多個 並電性連接 側。 ，其中該半導 ，其中該半導 I膜結構。 ，其中該半導 I膜結構。 ，更包括一模 含構之一側上 ，其中該模組 >口以形成。 20 200836304 7.如申請專利範圍第1項所述之半導體封裝，更包括堆疊 在該半導體晶片之頂部表面上的至少一或多個半導體 晶片。
    8.如申請專利範圍第7項所述之半導體封裝，其中該半導 體晶片係藉由該凸塊而電性連接至該多層薄膜結構，且 其他半導體晶片係藉由該電線而電性連接至該多層薄 膜結構。 9.如申請專利範圍第1項所述之半導體封裝，其中該多層 薄膜結構包括一薄膜被動式元件於其中。 10.如申請專利範圍第9項所述之半導體封裝，其中該薄膜 被動式元件包括一電容器、一電感器與一電阻器之至少 • -者。 1 1.如申請專利範圍第1項所述之半導體封裝，更包括至少 . 一金屬層，形成於該多層薄膜結構之重分佈層與該銲錫 凸塊之間。 1 2.如申請專利範圍第11項所述之半導體封裝，其中該金 屬層包括一電極襯墊與一凸塊下金屬（under bump 21 200836304 metal) 〇 13.如申請專利範圍第12項所述之半導體封裝，其中該凸 塊下金屬包括金。 14. 如申請專利範圍第1項所述之半導體封裝，其中該多層 薄膜結構包括電性連接至該重分佈層之另一重分佈層。 15. 如申請專利範圍第14項所述之半導體封裝，其中該半 導體晶片係藉由該電線而電性連接至該另一重分佈層。 16.如申請專利範圍第1項所述之半導體封裝，更包括一熱 能散佈器，接觸該半導體晶片之頂部表面。 17. —種堆疊之半導體封裝，其至少包括：
    二或多個半導體封裝，係藉由一銲錫凸塊而電性連 接，其中各個半導體封裝包括： 一多層薄膜結構，其包含複數個介電層與至少一 或多個重分佈層； 一半導體晶片，位於該多層薄膜結構之一側並電 性連接至該重分佈層；及 - 該銲錫凸塊，形成在該多層薄膜結構之另一側。 22 200836304 18.—種製造一半導體封裝之方法，至少包括下列步驟： 形成一多層薄膜結構，該多層薄膜結構包含複數個介電 層與至少一或多個重分佈層； 在該多層薄膜結構之一側配置一半導體晶片並將該半 導體晶片電性連接至該重分佈層；及 在該多層薄膜結構之另一側形成一銲錫凸塊。
    19.如申請專利範圍第18項所述之方法，其中該多層薄膜 結構係在晶圓層級或載具層級加以形成。 20.如申請專利範圍第18項所述之方法，其更包括： 在晶圓層級形成多個半導體晶片； 在晶圓層級測試該些半導體晶片；及 在晶圓層級將該些半導體晶片分成個別的半導體晶片。 21.如申請專利範圍第20項所述之方法，其更包括：在晶 圓層級形成該半導體晶片之後，薄化一晶圓之背面。 22.如申請專利範圍第18項所述之方法，其中該形成多層 薄膜結構包括下列之步驟： 在該晶圓或載具上形成一結合層； 在該結合層上形成一凸塊下金屬； 在該凸塊下金屬上，部分地形成一電極襯墊； 23 200836304 在該凸塊下金屬上形成一第一介電層以便暴露該電極 襯墊； 形成一重分佈層，以電性連接至該電極襯墊；及 形成一第二介電層，以便部分地暴露該重分佈層。
    23·如申請專利範圍第22項所述之方法，更包括：在將該 半導體晶片電性連接至該多層薄膜結構之後，自該多層 薄膜結構移除該晶圓或載具。 24·如申請專利範圍第1 8項所述之方法，更包括在該多層 薄膜結構之一側上形成一模組部件。 25.如申請專利範圍第18項所述之方法，更包括將該封裝 分成個別的封裝，其中在晶圓層級或載具層級將該多層 薄膜結構連接至該半導體晶片。
    24
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