TWI384593B - 半導體封裝及其製造方法 - Google Patents

半導體封裝及其製造方法 Download PDF

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Publication number
TWI384593B
TWI384593B TW096150602A TW96150602A TWI384593B TW I384593 B TWI384593 B TW I384593B TW 096150602 A TW096150602 A TW 096150602A TW 96150602 A TW96150602 A TW 96150602A TW I384593 B TWI384593 B TW I384593B
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Taiwan
Prior art keywords
film structure
semiconductor
package
semiconductor wafer
redistribution layer
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TW096150602A
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English (en)
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TW200836304A (en
Inventor
Gi Jo Jung
In Soo Kang
Jong Heon Kim
Seung Dae Baek
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Nepes Corp
Nepes Pte Ltd
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Publication of TW200836304A publication Critical patent/TW200836304A/zh
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Publication of TWI384593B publication Critical patent/TWI384593B/zh

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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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Description

半導體封裝及其製造方法
本發明係關於半導體封裝與其製造方法，而更明確地，係關於輕薄短小的半導體封裝，其中直接將半導體晶片接合於多層薄膜結構而不需使用任何封裝用之基材；以及其在晶圓層級(wafer level)或載具層級(carrier level)的製造方法。
半導體元件能夠藉由許多整合在單一基材中的電子元件實現不同的運作。為此目的，已經使用多種高技術製造方法且已經發展出將半導體元件製造中的各個元件微型化以形成較小尺寸的部件。
發展半導體元件的封裝技術已經提出了高整合與高容量的半導體系統。自打線接合(wire bonding)轉變成覆晶凸塊植球(flip－chip bumping)之半導體封裝技術能夠實現符合市場需求之晶片尺寸。
第1圖係描述傳統球閘陣列(ball grid array,BGA)封裝10結構之實例的剖面圖。個別的半導體晶片14藉由結合層20接合至封裝用之基材12的一側，且半導體晶片的一部份藉由電線16而電性連接至基材的一部分。許多焊錫凸塊18形成在基材的底部表面上，而覆蓋半導體晶片與電線之保護模組(protecting molding)30則形成在基材的頂部表面上。
如上所述，傳統技術中需要預定厚度之基材來封裝半導體晶片。當半導體晶片運作時，訊號係由形成在基材之頂部表面上的電線通過電性互連結構傳送至形成在基材之底部表面上的焊錫凸塊。然而，由於半導體元件的發展，已經明顯地改善半導體元件的運作速度。接著，當封裝中的互連結構長度為長的時，那麼高速運作或高容量訊號處理時訊號會延遲或嚴重失真，因此無法滿足不同應用元件的需求。
再者，由於封裝需要預定厚度之基材，所以減少整體封裝之尺寸與厚度將有所限制。因此，基材變成發展小型或輕薄的通訊裝置或電子裝置之阻礙。
再者，傳統BGA封裝技術在實現不同堆疊之封裝或系統化封裝中有所限制且無法有效地大量生產。
因此，本發明係關於提供新穎的BGA封裝，其厚度非常薄且結構非常簡單。
本發明之另一態樣係提供BGA封裝，其具有短的電性互連長度適合高速運作。
本發明之另一態樣係提供BGA封裝，其易於堆疊與安裝在表面上。
本發明之另一態樣係提供製造BGA封裝的方法，其適合大量生產且處理簡單並明顯減少錯誤率。
本發明其他目的與特徵將於下更詳細地呈現：依照本發明之一態樣，本發明提供一半導體封裝，其包括：多層薄膜結構，其包含複數個介電層與至少一或多個重分佈層；半導體晶片，位於多層薄膜結構之一側並電性連接至重分佈層；以及多個焊錫凸塊，形成在多層薄膜結構之另一側。
半導體晶片可包含至少一或多個重分佈層或可不具任何重分佈層而接合至多層薄膜結構。半導體晶片可藉由凸塊或電線而電性連接至多層薄膜結構，或即將堆疊之二或多個半導體晶片可置於多層薄膜結構之一側。當複數個半導體晶片位於多層薄膜結構上時，一半導體晶片可藉由凸塊而電性連接至多層薄膜結構且其他半導體晶片可藉由電線而電性連接至多層薄膜結構。
半導體封裝更包含一模組部件，其形成在多層薄膜結構的一側且位於半導體晶片的側面方向上。可低於半導體晶片之頂部表面而形成模組部件以使半導體封裝的整體厚度最小化。
多層薄膜結構可作為半導體封裝之基材以實現覆晶封裝。由於在晶圓層級或載具層級可同時形成複數個封裝，因此處理係簡單的且適合大量生產。
多層薄膜結構可執行額外的功能因為其中嵌入了薄膜被動元件。薄膜被動元件包含例如電容器、電感器與電阻器至少一者。
多層薄膜結構之重分佈層與焊錫凸塊之間形成至少一金屬層，且該金屬層包括電極襯墊與凸塊下金屬(under bump metal)。
根據本發明之半導體封裝可實現成為非常輕薄短小的封裝。再者，可非常輕易地堆疊複數個這些半導體封裝。
明確地說，藉由電性連接與垂直設置二或更多半導體封裝與焊錫凸塊，可提供堆疊之半導體封裝，各個封裝包括多層薄膜結構，其包含複數個介電層與至少一或多個重分佈層；半導體晶片，位於多層薄膜結構之一側並電性連接至重分佈層；以及多個焊錫凸塊，形成於多層薄膜結構之另一側。此實例中，一BGA封裝可透過焊錫凸塊而電性連接至另一BGA封裝之多層薄膜結構的一側。
再者，可藉由垂直堆疊BGA封裝或水平安裝BGA封裝於不同的印刷電路板而實現系統化之封裝。
根據本發明之輕薄短小的堆疊封裝可讓通訊裝置、顯示器與其他不同電子裝置變小與輕薄並有助於提高應用封裝之產品的競爭力。
根據本發明之另一態樣，本發明提供製造半導體封裝之方法，其包括以下步驟：形成多層薄膜結構，其包含複數個介電層與至少一或多個重分佈層；將半導體晶片配置在多層薄膜結構之一側並將半導體晶片電性連接至重分佈層；以及在多層薄膜結構之另一側形成多個焊錫凸塊。
較佳地，可在晶圓層級或載具層級形成多層薄膜結構。在將多層薄膜結構電性連接至半導體晶片且形成焊錫凸塊之後，可將多層薄膜結構分成各個封裝以簡化整體處理。
在晶圓層級形成半導體晶片之後，僅有具有優秀運作特性(經由晶圓層級的半導體晶片測試所挑選)的半導體晶片接合至多層薄膜結構，其藉由最大地減少半導體晶片之錯誤率來提供高品質的封裝產品。
再者，藉由利用微米級的超薄膜結構(不具任何封裝用之基材)製造之封裝係使封裝厚度最小化並藉由部分地形成模組部件以補充多層薄膜結構的機械支撐力。再者，製造半導體封裝之方法更包括在晶圓層級形成半導體晶片之後薄化晶圓背面之步驟，以實現超級薄化之BGA封裝。
多層薄膜結構在晶圓或載具上形成結合層並在結合層上形成凸塊下金屬、電極襯墊、介電層與重分佈層。將半導體晶片電性連接至多層薄膜結構之後，自多層薄膜結構移除晶圓或載具。
根據本發明，在晶圓層級或載具層級同時製造複數個封裝之後將其分成各個封裝，其中多層薄膜結構與半導體晶片係彼此連接。因此，根據本發明之半導體封裝適合大量生產並可減少製造成本。
現將參照附圖(其中顯示本發明之較佳實施例)於下更完整地描述本發明。
第2圖係根據本發明實施例之BGA封裝100的剖面圖。BGA封裝100為薄的，其中半導體晶片130接合至較低位置之多層薄膜結構110的頂部表面。
多層薄膜結構110具有包括介電層與重分佈層之超薄膜形式。該圖示中，為了清晰之便而誇大多層薄膜結構之厚度。然而，其實際厚度係低於毫米且較佳係處於微米等級。
形成於多層薄膜結構110內之重分佈層116的一部分係藉由傳導凸塊120而電性連接至形成於多層薄膜結構110之頂部表面上的半導體晶片130。半導體晶片130可包含重分佈層134。此實例中，重分佈層134之一部分接觸傳導凸塊120以電性連接至多層薄膜結構。
多層薄膜結構110之底部表面上形成至少一焊錫凸塊125，以便多層薄膜結構110可裝設於外部電路上或電性連接至另一封裝。再者，如同描述般在多層薄膜結構110之頂部表面上且位於半導體晶片130之側面方向中部分地形成模組部件140，以補充多層薄膜結構110之機械支撐力。模組部件140僅部分地形成在半導體晶片130之側面方向中且模組部件140之高度不會超過半導體晶片130之頂部表面，以實現非常薄且大體上近似於半導體晶片厚度的BGA封裝。再者，由於模組部件並不形成於半導體晶片130之頂部表面且暴露於外，當半導體晶片130在高速下運作時可有利地將熱分佈到外側。
再者，在未形成模組部件140之半導體晶片130的頂部表面上，可額外地附加熱能散佈器(未顯示)以改善半導體晶片130的熱能散佈。
根據本發明實施例之BGA封裝不僅為輕薄短小，且許多BGA封裝係易於水平裝置在外部電路基材上或垂直堆疊。第3圖描述堆疊之半導體封裝200的實例，其中上部封裝I與下部封裝II係藉由銲錫凸塊直接接合且不具任何堆疊用之額外基材。上部封裝I之焊錫凸塊係電性連接至下部封裝II之多層薄膜結構的一側，以明顯地減少堆疊之封裝的厚度。
舉例來說，層疊封裝(package on package,PoP)形式的堆疊封裝係應用於需要高容量記憶體的電子裝置或通訊裝置，以更加地提高消費者產品的可靠度與價值。
再者，根據本發明之BGA封裝的結構可能係一或多個半導體晶片堆疊其中之多層薄膜結構。參照第4圖，將兩半導體晶片320與330垂直堆疊以在多層薄膜結構310上接合在一起。下部半導體晶片320係透過銲錫凸塊312而電性連接至多層薄膜結構，且上部半導體晶片330係透過電線335而電性連接至多層薄膜結構。除此之外，所有的上部與下部半導體晶片可藉由區別堆疊之半導體晶片的大小而透過焊錫凸塊覆晶式接合至一多層薄膜結構上。再者，三或更多之半導體晶片可堆疊於一多層薄膜結構上。各個堆疊之半導體晶片可藉由結合層325而彼此接合。
根據本發明實施例之BGA封裝係在晶圓層級或載具層級加以製造，以進行薄化並適合大量生產。
第5圖到第20圖描述根據本發明實施例來製造BGA封裝的處理。第5圖到第9圖中描述了製造作為封裝基材之多層薄膜結構的製程。
為了形成多層薄膜結構，準備了晶圓或載具111。形成薄膜結構並移除載具(在完成製程之後)的結合層112係形成於載具111之頂部表面。凸塊下金屬113係形成於結合層112上(第5圖)。凸塊下金屬113可包括金屬或合金形成之一或多層。
凸塊下金屬113可形成於一層中或者二或更多層之多層結構中，該層係選自下列之一或多個物質：諸如銅(Cu)、銅合金(Cu－alloy)、鎳(Ni)、鎳合金(Ni－alloy)、鎢(W)、鎢合金(W－alloy)、鈦(Ti)、鈦合金(Ti－alloy)、鋁(Al)、鋁合金(Al－alloy)、鉻(Cr)、鉻合金(Cr－alloy)、金(Au)、金合金(Au－alloy)、鈀(Pd)、鈀合金(Pd－alloy)、銻(Sb)、銻合金(Sb－alloy)、銦(In)、銦合金(In－alloy)、鉍(Bi)、鉍合金(Bi－alloy)、鉑(Pt)與鉑合金(Pt－alloy)。
在凸塊下金屬113之頂部表面的一部分上形成連接銲錫凸塊之電極襯墊114(第6圖)，且形成暴露電極襯墊114之第一介電層115(第7圖)。形成第一介電層115之後，藉由部分蝕刻來暴露電極襯墊。由於執行用來暴露電極襯墊114之光阻塗覆處理、暴露處理與部份蝕刻處理係熟悉技術之人士所習知的，因此不需要呈現詳細之描述。
重分佈層116係部份地形成於第一介電層115之頂部表面上(第8圖)，且形成第二介電層117以部分地暴露重分佈層116(第9圖)。
雖然為了清楚描述而僅描述晶圓或載具111上之一單獨多層薄膜結構，但在實際的情況中，在晶圓層級或載具層級同時形成複數個封裝之多層薄膜結構，且在完成最終處理之後將其分成個別的封裝。
由於係在晶圓層級或載具層級形成多層薄膜結構，所以易於調整整體厚度與尺寸因此可能製造輕薄且小型的BGA封裝。再者，由於電極襯墊至銲錫凸塊之互連(以電性連接至外部)的長度非常短，因此可避免高速運作時的訊號延遲或失真。
第10圖到第13圖中描述在晶圓層級製造半導體晶片的處理。
準備好在晶圓層級製備之半導體晶片130。雖然複數個半導體晶片130形成於晶圓上，但為了清晰之便僅在圖示中描述單一晶片。舉例來說，半導體晶片130內可形成多個薄膜元件(未顯示)，諸如電晶體、二極體與電線。半導體晶片可為記憶體或邏輯電路。
在半導體晶片130之頂部表面的一部分上形成電極襯墊131，且形成暴露該電極襯墊之第一介電層132(第10圖)。隨後，形成電性接觸電極襯墊131之凸塊下金屬133(第11圖)且接著在凸塊下金屬133上形成重分佈層134。部分地蝕刻凸塊下金屬133與重分佈層134以形成圖案(第12圖)。
最終，在重分佈層134上形成第二介電層135’以便部分地暴露重分佈層134之一部分。
本發明中，半導體晶片130可包含重分佈層134，但其在描述於後之另一實施例中可不包含重分佈層134。
在晶圓層級下形成之半導體晶片130在被分成個別晶片之前進行晶圓層級的試驗。晶圓層級的試驗之後，挑選具有優良運作特性且不具錯誤之晶片用於封裝。
在半導體晶片的測試之前或之後，形成銲錫凸塊之前在晶圓層級上執行晶圓薄化處理，以大幅地減少半導體晶片之厚度。
第14圖到第20圖中描述將半導體晶片130’接合至多層薄膜結構110’的處理。
將透過測試所挑選之具有優良運作特性的半導體晶片130’在晶圓層級或載具層級上配置於多層薄膜結構110’中(第14圖)。在多層薄膜結構110’之重分佈層116的一暴露部分上形成傳導凸塊120或在半導體晶片130’之重分佈層的一暴露部分上形成傳導凸塊，以將半導體晶片130’電性連接至多層薄膜結構110’(第15圖)。
完成其之連接後，移除用來形成多層薄膜結構110’之載具(或晶圓)111(第16圖)。接著，部分地移除多層薄膜結構110’之底部表面的凸塊下金屬113(第17圖)。舉例來說，凸塊下金屬113可由二或更多金屬層113a與113b所構成。藉由保存電性連接至重分佈層116之部分周圍而部份地移除凸塊下金屬113。第18圖係形成銲錫凸塊之區域X的放大圖，其顯示重分佈層116、電極襯墊114與凸塊下金屬之局部層113b(形成銲錫凸塊之區域周圍)所形成的多層結構。
接著，在多層薄膜結構之一側上且位於半導體晶片之側面方向中部份地形成模組部件140(第19圖)。可在自多層薄膜結構移除載具(或晶圓)111之前形成模組部件140。
最終，形成銲錫凸塊125以接觸殘留在多層薄膜結構110’之底部表面上的凸塊下金屬113，以完成本發明實施例之BGA封裝(第20圖)。形成在凸塊下金屬113上之焊錫凸塊可藉由植球(ball attaching)、電鍍、無電鍍覆、印刷、濺鍍等方法而加以形成。
根據本發明之BGA封裝中，不像上述之實施例，位於多層薄膜結構中之半導體晶片可能不包含重分佈層。
第21圖係根據本發明另一實施例之BGA封裝結構400的剖面圖，其中不包含重分佈層之半導體晶片430係藉由銲錫凸塊412而連接至多層薄膜結構410。
根據本發明另一實施例之BGA封裝500中，半導體晶片530係藉由電線535而電性連接至多層薄膜結構510，如第22圖中所示。此實例中，結合層525係形成在半導體晶片530之底部表面上以接合至多層薄膜結構510之一側。
第23圖係根據本發明另一實施例之BGA封裝結構600的剖面圖，其中薄膜元件係嵌入多層薄膜結構中。舉例來說，薄膜元件可包含被動式元件，諸如電感器612或電容器614。可以相同方式將包含薄膜元件之多層薄膜結構應用在第2圖至第4圖之BGA封裝。
第24圖到第31圖描述藉由將不包含重分佈層之半導體晶片應用於多層薄膜結構來製造BGA封裝之處理。
第24圖之多層薄膜結構中，在載具(或晶圓)511上形成結合層512與凸塊下金屬513之後，接連堆疊電極襯墊514、第一介電層515、第一重分佈層516與第二介電層517。此結構相似於上述實施例中(第9圖)的多層薄膜結構，其中形成有第二介電層。
其中形成有第一重分佈層516之多層薄膜結構中，在載具層級或晶圓層級上形成第二重分佈層518以部分地連接至第一重分佈層516(第25圖)，且形成第三介電層519以部分地暴露第二重分佈層518(第26圖)。
接著，半導體晶片530之一部分藉由電線535而電性連接至多層薄膜結構之第二重分佈層518的暴露部分(第28圖)。接著，移除接合至多層薄膜結構510之底部表面的載具(或晶圓)511並持續部份地移除多層薄膜結構之底部表面的凸塊下金屬513(第29圖)。
接著，在多層薄膜結構510之頂部表面與半導體晶片530上形成模組部件540以覆蓋電線535(第30圖)。
最終，形成銲錫凸塊527以連接殘留於多層薄膜結構之底部表面的凸塊下金屬513，好完成根據本發明實施例之BGA封裝(第31圖)。
本發明中，舉例來說，第一介電層、第二介電層或第三介電層可由介電材質所構成，諸如聚醯亞胺、BCB、氧化矽、氮化矽等等，而重分佈層可由諸如銅、金、鋁、鎢等材質所構成。然而，介電層與重分佈層可由其他材質所構成，且本發明並不限於上述之材質。
如上所述，根據本發明，多層薄膜結構可作為半導體封裝之基材並實現不具任何額外基材之輕薄短小的BGA封裝。再者，可在晶圓層級或載具層級同時形成複數個封裝以簡化處理且適合於大量生產。再者，在晶圓層級同時形成複數個半導體晶片之後，僅有那些具有優良運作特性(透過晶圓層級之半導體晶片測試)的半導體晶片選擇性地接合至多層薄膜結構，以提供最大地減少半導體晶片之錯誤率的高品質封裝產品。多層薄膜結構能夠執行嵌入其中之薄膜被動式元件的額外功能。再者，將BGA封裝垂直堆疊或水平裝置在不同的印刷電路板上以實現系統化封裝。根據本發明之輕薄短小的BGA封裝讓通訊裝置、顯示器與其他不同的電子裝置變小與輕薄，並有助於提高應用BGA封裝之產品的競爭力。
已經利用較佳之示範實施例描述本發明。然而，可以理解本發明之範圍不限於所揭露之實施例。相反地，預期本發明之範圍包括在熟悉技術人士之能力內的不同修改與替換配置(利用目前已知或未來技術與等效物)。因此，應給予申請專利範圍最廣之解釋以便其包含所有上述之修改與相似之配置。
接著，將在晶圓層級製造且之後通過測試而挑選之半導體晶片530接合至多層薄膜結構的頂部表面(第27圖)。對於半導體晶片530之接合而言，可使用額外之結合層525。
10、100、400、500、600．．．BGA封裝
12．．．基材
14、130、130’、430、530．．．半導體晶片
16、335、535、635．．．電線
18、125、312、315、412、527．．．焊錫凸塊
20、112、325、512、525、625．．．結合層
30．．．保護模組
110、110’、310、410、510、610．．．多層薄膜結構
111、511．．．載具
113、133、513．．．凸塊下金屬
113a、113b．．．金屬層
114、131、514．．．電極襯墊
115、132、515．．．第一介電層
116、134、416．．．重分佈層
117、135、517．．．第二介電層
120．．．傳導凸塊
140、540．．．模組部件
200．．．半導體封裝
320．．．下部半導體晶片
330．．．上部半導體晶片
516．．．第一重分佈層
518．．．第二重分佈層
519．．．第三介電層
612．．．電感器
614．．．電容器
熟悉技術之人士可藉由詳細描述的較佳實施例並參照附圖而更加理解本發明上述與其他之特徵與優點：第1圖係傳統BGA封裝結構的剖面圖；第2圖係根據本發明實施例之半導體封裝結構的剖面圖；第3圖係根據本發明之一堆疊半導體封裝結構的剖面圖；第4圖係根據本發明之另一堆疊半導體封裝結構的剖面圖；第5圖到第9圖係根據本發明實施例描述在晶圓層級或載具層級製造多層薄膜結構之處理的剖面圖；第10圖到第13圖係根據本發明實施例描述在晶圓層級製造半導體晶片之處理的剖面圖；第14圖到第20圖係根據本發明實施例描述製造半導體封裝之處理的剖面圖；第21圖係根據本發明之另一實施例的半導體封裝結構之剖面圖；第22圖係根據本發明之另一實施例的半導體封裝結構之剖面圖；第23圖係根據本發明之另一實施例的半導體封裝結構之剖面圖；及第24圖到第31圖係根據本發明之另一實施例描述製造半導體封裝之處理的剖面圖。
100．．．BGA封裝
110．．．多層薄膜結構
116、134．．．重分佈層
120．．．傳導凸塊
125．．．焊錫凸塊
130．．．半導體晶片

Claims (15)

  1. 一種半導體封裝，其至少包含：一支撐部件，該支撐部件包括a)一第一介電層，該第一介電層具有至少一開孔，b)一重分佈層，該重分佈層係在該第一介電層上，c)一第二介電層，該第二介電層係在該重分佈層上，該第二介電層具有至少一暴露該重分佈層的一部分的開孔，及d)一模組部件，該模組部件係在該第二介電層上，該模組部件係形成於該第二介電層的中心周圍；一半導體晶片，該半導體晶片係位在該第二介電層的中心處並電性連接至該重分佈層；及一銲錫凸塊，該銲錫凸塊係形成在該第一介電層上並電性連接至該重分佈層。
  2. 如申請專利範圍第1項所述之半導體封裝，其中該半導體晶片包括一重分佈層。
  3. 如申請專利範圍第1項所述之半導體封裝，其中該半導體晶片係藉由一凸塊而電性連接至該重分佈層。
  4. 如申請專利範圍第1項所述之半導體封裝，其中該半導體晶片係藉由一電線而電性連接至該重分佈層。
  5. 如申請專利範圍第1項所述之半導體封裝，其中該模組部件係以低於該半導體晶片之頂部表面而加以形成。
  6. 如申請專利範圍第1項所述之半導體封裝，更包括堆疊在該半導體晶片之頂部表面上的至少一或多個半導體晶片。
  7. 如申請專利範圍第6項所述之半導體封裝，其中該半導體晶片係藉由該凸塊而電性連接至該重分佈層，且其他半導體晶片係藉由該電線而電性連接至該重分佈層。
  8. 如申請專利範圍第1項所述之半導體封裝，其中該重分佈層包括一薄膜被動式元件於其中。
  9. 如申請專利範圍第8項所述之半導體封裝，其中該薄膜被動式元件包括一電容器、一電感器與一電阻器之至少一者。
  10. 如申請專利範圍第1項所述之半導體封裝，更包括至少一金屬層，該至少一金屬層係形成於該重分佈層與該銲錫凸塊之間。
  11. 如申請專利範圍第10項所述之半導體封裝，其中該金屬層包括一電極襯墊與一凸塊下金屬(under bump metal)。
  12. 如申請專利範圍第11項所述之半導體封裝，其中該凸塊下金屬包括金。
  13. 如申請專利範圍第1項所述之半導體封裝，其中該重分佈層包括電性連接至該重分佈層之另一重分佈層。
  14. 如申請專利範圍第13項所述之半導體封裝，其中該半導體晶片係藉由該電線而電性連接至該另一重分佈層。
  15. 如申請專利範圍第1項所述之半導體封裝，更包括一熱能散佈器，該熱能散佈器接觸該半導體晶片之頂部表面。
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