TW200832718A - Semiconductor device and method of manufacturing a semiconductor device - Google Patents
Semiconductor device and method of manufacturing a semiconductor device Download PDFInfo
- Publication number
- TW200832718A TW200832718A TW096135728A TW96135728A TW200832718A TW 200832718 A TW200832718 A TW 200832718A TW 096135728 A TW096135728 A TW 096135728A TW 96135728 A TW96135728 A TW 96135728A TW 200832718 A TW200832718 A TW 200832718A
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- layer
- semiconductor device
- insulator
- coating film
- Prior art date
Links
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- GUDIUEQLEQNWFS-UHFFFAOYSA-N propane-1,2-diol;propan-2-one Chemical compound CC(C)=O.CC(O)CO GUDIUEQLEQNWFS-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6725—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having supplementary regions or layers for improving the flatness of the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006257848 | 2006-09-22 | ||
| JP2006313492A JP2008103653A (ja) | 2006-09-22 | 2006-11-20 | 半導体装置及び半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200832718A true TW200832718A (en) | 2008-08-01 |
Family
ID=39200608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096135728A TW200832718A (en) | 2006-09-22 | 2007-09-26 | Semiconductor device and method of manufacturing a semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20090278134A1 (enExample) |
| EP (1) | EP2088629A1 (enExample) |
| JP (1) | JP2008103653A (enExample) |
| KR (1) | KR20090071538A (enExample) |
| TW (1) | TW200832718A (enExample) |
| WO (1) | WO2008035786A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11282964B2 (en) | 2017-12-07 | 2022-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101807004B (zh) * | 2010-03-08 | 2012-07-11 | 彩虹集团电子股份有限公司 | 一种用于彩色显像管网版生产的工作版的制做方法 |
| US9087749B2 (en) * | 2010-12-27 | 2015-07-21 | Sharp Kabushiki Kaisha | Active matrix substrate, and display panel |
| US8987071B2 (en) * | 2011-12-21 | 2015-03-24 | National Applied Research Laboratories | Thin film transistor and fabricating method |
| WO2013179922A1 (en) * | 2012-05-31 | 2013-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN103681870B (zh) * | 2012-09-13 | 2016-12-21 | 北京京东方光电科技有限公司 | 阵列基板及其制造方法 |
| WO2015076358A1 (ja) * | 2013-11-21 | 2015-05-28 | 株式会社ニコン | 配線パターンの製造方法およびトランジスタの製造方法 |
| JP6926939B2 (ja) * | 2017-10-23 | 2021-08-25 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0812539B2 (ja) * | 1985-01-29 | 1996-02-07 | 株式会社東芝 | 表示装置及びその製造方法 |
| JPH03159174A (ja) * | 1989-11-16 | 1991-07-09 | Sanyo Electric Co Ltd | 液晶表示装置 |
| JP3173926B2 (ja) * | 1993-08-12 | 2001-06-04 | 株式会社半導体エネルギー研究所 | 薄膜状絶縁ゲイト型半導体装置の作製方法及びその半導体装置 |
| JPH10268343A (ja) * | 1997-03-24 | 1998-10-09 | Sharp Corp | 液晶表示装置およびその製造方法 |
| JP2001188343A (ja) | 1999-12-28 | 2001-07-10 | Nippon Zeon Co Ltd | 感光性樹脂組成物 |
| JP4022470B2 (ja) * | 2001-02-19 | 2007-12-19 | 日本アイ・ビー・エム株式会社 | 薄膜トランジスタ構造の製造方法、およびディスプレイ・デバイス |
| JP2002296780A (ja) | 2001-03-30 | 2002-10-09 | Nippon Zeon Co Ltd | 感光性樹脂組成物 |
| JP2002353167A (ja) * | 2001-05-29 | 2002-12-06 | Sharp Corp | 金属配線基板及び金属配線基板の製造方法並びに反射型液晶表示装置用金属配線基板 |
| US6835503B2 (en) * | 2002-04-12 | 2004-12-28 | Micron Technology, Inc. | Use of a planarizing layer to improve multilayer performance in extreme ultra-violet masks |
| JP2003318401A (ja) * | 2002-04-22 | 2003-11-07 | Seiko Epson Corp | デバイスの製造方法、デバイス、表示装置、および電子機器 |
| WO2004110117A1 (ja) | 2003-06-04 | 2004-12-16 | Zeon Corporation | 基板及びその製造方法 |
| US6969634B2 (en) * | 2003-09-24 | 2005-11-29 | Lucent Technologies Inc. | Semiconductor layers with roughness patterning |
| JP4554344B2 (ja) | 2003-12-02 | 2010-09-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4286116B2 (ja) | 2003-12-09 | 2009-06-24 | 株式会社リコー | 画像形成用トナー、現像剤及び画像形成装置 |
| WO2005096684A1 (ja) * | 2004-03-31 | 2005-10-13 | Zeon Corporation | 回路基板、回路基板の製造方法及び回路基板を備えた表示装置 |
| US7864398B2 (en) * | 2004-06-08 | 2011-01-04 | Gentex Corporation | Electro-optical element including metallic films and methods for applying the same |
| JP4543385B2 (ja) * | 2005-03-15 | 2010-09-15 | 日本電気株式会社 | 液晶表示装置の製造方法 |
| US7919825B2 (en) * | 2006-06-02 | 2011-04-05 | Air Products And Chemicals, Inc. | Thin film transistors with poly(arylene ether) polymers as gate dielectrics and passivation layers |
-
2006
- 2006-11-20 JP JP2006313492A patent/JP2008103653A/ja not_active Withdrawn
-
2007
- 2007-09-21 US US12/442,330 patent/US20090278134A1/en not_active Abandoned
- 2007-09-21 KR KR1020097002202A patent/KR20090071538A/ko not_active Withdrawn
- 2007-09-21 EP EP07807788A patent/EP2088629A1/en not_active Withdrawn
- 2007-09-21 WO PCT/JP2007/068458 patent/WO2008035786A1/ja not_active Ceased
- 2007-09-26 TW TW096135728A patent/TW200832718A/zh unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11282964B2 (en) | 2017-12-07 | 2022-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US11784259B2 (en) | 2017-12-07 | 2023-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008035786A1 (en) | 2008-03-27 |
| EP2088629A1 (en) | 2009-08-12 |
| KR20090071538A (ko) | 2009-07-01 |
| JP2008103653A (ja) | 2008-05-01 |
| US20090278134A1 (en) | 2009-11-12 |
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