TW200802583A - Infrared laser wafer scribing using short pulses - Google Patents
Infrared laser wafer scribing using short pulsesInfo
- Publication number
- TW200802583A TW200802583A TW096118205A TW96118205A TW200802583A TW 200802583 A TW200802583 A TW 200802583A TW 096118205 A TW096118205 A TW 096118205A TW 96118205 A TW96118205 A TW 96118205A TW 200802583 A TW200802583 A TW 200802583A
- Authority
- TW
- Taiwan
- Prior art keywords
- infrared laser
- short pulses
- laser wafer
- scribing
- wafer scribing
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
- B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/1127—Q-switching using pulse transmission mode [PTM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/2232—Carbon dioxide (CO2) or monoxide [CO]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/441,454 US20070272666A1 (en) | 2006-05-25 | 2006-05-25 | Infrared laser wafer scribing using short pulses |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200802583A true TW200802583A (en) | 2008-01-01 |
TWI415180B TWI415180B (zh) | 2013-11-11 |
Family
ID=38748589
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096118205A TWI415180B (zh) | 2006-05-25 | 2007-05-22 | 使用短脈衝之紅外線雷射晶圓刻劃方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20070272666A1 (zh) |
JP (1) | JP2009544145A (zh) |
KR (1) | KR20090013801A (zh) |
CN (1) | CN101681876B (zh) |
DE (1) | DE112007001278T5 (zh) |
GB (1) | GB2452429A (zh) |
TW (1) | TWI415180B (zh) |
WO (1) | WO2008027634A2 (zh) |
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KR101123753B1 (ko) * | 2005-03-29 | 2012-03-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 레이저 조사 장치 및 반도체 장치의 제조 방법 |
DE102006000205B4 (de) * | 2005-04-28 | 2012-11-08 | Denso Corporation | Laser-Maschinenzündvorrichtung |
JP2006319198A (ja) * | 2005-05-13 | 2006-11-24 | Disco Abrasive Syst Ltd | ウエーハのレーザー加工方法およびレーザー加工装置 |
US8624157B2 (en) * | 2006-05-25 | 2014-01-07 | Electro Scientific Industries, Inc. | Ultrashort laser pulse wafer scribing |
-
2006
- 2006-05-25 US US11/441,454 patent/US20070272666A1/en not_active Abandoned
-
2007
- 2007-05-21 JP JP2009512239A patent/JP2009544145A/ja active Pending
- 2007-05-21 DE DE112007001278T patent/DE112007001278T5/de not_active Withdrawn
- 2007-05-21 WO PCT/US2007/069323 patent/WO2008027634A2/en active Application Filing
- 2007-05-21 KR KR1020087028719A patent/KR20090013801A/ko active Search and Examination
- 2007-05-21 CN CN200780025957XA patent/CN101681876B/zh not_active Expired - Fee Related
- 2007-05-22 TW TW096118205A patent/TWI415180B/zh not_active IP Right Cessation
-
2008
- 2008-11-24 GB GB0821326A patent/GB2452429A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
KR20090013801A (ko) | 2009-02-05 |
TWI415180B (zh) | 2013-11-11 |
US20070272666A1 (en) | 2007-11-29 |
CN101681876B (zh) | 2011-04-13 |
CN101681876A (zh) | 2010-03-24 |
DE112007001278T5 (de) | 2009-05-07 |
WO2008027634A3 (en) | 2009-11-26 |
GB0821326D0 (en) | 2008-12-31 |
JP2009544145A (ja) | 2009-12-10 |
GB2452429A (en) | 2009-03-04 |
WO2008027634A2 (en) | 2008-03-06 |
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