TWI415180B - 使用短脈衝之紅外線雷射晶圓刻劃方法 - Google Patents
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Description
本發明係有關於雷射切割或刻劃,更明確地係有關於使用q開關來刻劃完工的的半導體晶圓用以減少或消除碎屑及裂痕的方法。
積體電路(IC)通常係以陣列的形式被製造在一半導體基材上。IC通常包括數層形成在該基材上的層。一或多層可藉由使用一機械式鋸子或雷射沿著刻劃線道或街道被去除掉。在刻劃之後,該基材可用一鋸子或雷射來加以切穿,其有時被稱為切割,用以將電路構件彼此分離開來。雷射刻劃及連續不斷的機械鋸切的結合亦可被用來切割。
然而,傳統的機械式鋸子及雷射切割方法並不很適合刻劃許多用絕緣或封包層及/或低k介電質層加工完成的晶圓。圖1A-1C為使用一傳統的鋸子在完工的晶圓114,116及118上切割後邊緣110,12,113的顯微鏡照片。如照片中所示,該等晶圓在靠近邊緣110,112,113處有碎屑及裂痕。相對低的密度,缺少機械強度及對熱應力很敏感使得低k介電質對於應力非常敏感。傳統的機械式晶圓切刻及刻劃技術會產生屑片、裂痕及在低k物質中的其它缺陷並因而傷害到IC元件。為了要減少這些問題,切割速度被減慢。然而,這將嚴重地降低產出率。
雷射刻劃技術相較於機械式鋸切有許多好處。然而,已知的雷射技術會產生嚴重的熱及屑片。過多的熱擴散會它會造成熱影響區,重鑄(recast)氧化物層,過多的碎片及其它的問題。裂痕會形成在該熱影響區內並降低該半導體物質的晶粒斷裂強度。因此,可靠性與良率會被降低。又,屑片會四散在該半導體物質的整個表面上且會污染黏接墊。此外,傳統的雷射切割輪廓會遭遇到雷射噴出物質的溝渠回填的問題。當晶圓厚度增加時,此回填問題變得更加嚴重且減慢切割速度。又,對於某些在許多處理條件下的物質而言,被噴出的回填物質在後續的處理中比原始的目標物質更難被去除掉。因此,會產生低品質的切割,而這會傷害到IC元件並需要額外的清潔及/或在基材上的元件的廣泛分布。
傳統的雷射刻劃技術包括了使用波長在中外線範圍內的連續波(CW)CO2
雷射然而,此等CW雷射很難聚焦且通常需要高的能量來剝離IC製程物質。因此,會產生過多的熱及碎屑。脈衝射的CO2
雷射亦被用於刻劃上。然而,此等刻劃技術使用在毫秒範圍內之長的脈衝。長的脈衝產生的是低的波峰功率且每脈衝高的能量被用來剝離物質。因此,長的脈衝容許過多的熱擴散,它會造成熱影響區,重鑄(recast)氧化物層,過多的碎片及裂痕。
另一種傳統的刻劃技術包括使用波長範圍在約1064奈米至約266奈米之間的雷射。然而,外鈍態及/或封包層通常對於這些波長是可部分穿透的。例如,一個在這些波長內的脈衝的第一部分可在沒有被吸收的狀態下穿過上鈍態及/或封包層。然而,這些脈衝在則會被底下的金屬及/或介電質層所吸收。因此,底下的層會被加熱且在上鈍態及/或封包層被該雷射剝離之前爆炸。這會造成該鈍態及/或封包層剝落或裂開並散布碎屑。圖2A及2B為使用傳統的高斯雷射脈衝(其脈衝寬度在微微秒範圍內)在晶圓214,216上刻劃出之切口210,212的電子顯微鏡照片。如照片所示,晶圓210,212在靠近切口210,212的部分有缺口(cracking)且有裂痕。
一種可減少或消除缺口,裂痕及碎屑且可提高產出率及切口表面或切口品質的雷射刻劃方法是所想要的。
本發明提供了雷射刻劃一完工的晶圓的方法用以有效率地剝離鈍態/封包層同時減少或消除在該鈍態/封包層中之碎屑及裂痕。短雷射脈衝被用來提供高的波峰功率並降低剝離門檻值。在一實施例中,刻劃是用一q開關CO2
雷射來實施的。
在一實施例中,一種用來刻劃其上或其內形成有複數個積體電路之基材的方法被提供。該等積體電路被一或多條街道(street)分隔開。該方法包括產生一或多個具有一波長及一脈衝寬度持續時間的雷射脈衝。該波長被加以選擇使得該一或多個脈衝可被目標物質吸收,該目標物質包含形成在該基材上的一鈍態層及一封包層的至少一者該波長被進一步加以選擇使得該基材對該一或多個脈衝是可穿透。該脈衝寬度持續時間被加以選擇用以降低該目標物質的剝離門檻值。
在另一實施例中,一種用來刻劃一半導體晶圓的方法被提供。該方法包括用一或多個雷射脈衝來剝離形成在該半導體晶圓上的一或多層的一部分,該一或多個脈衝具有一範圍在約9微米至約11微米內之波長。該一或多個雷射脈衝具有範圍在約130奈秒至約170奈秒內之脈衝寬度持續時間。在一實施例中,該半導體晶圓包含矽。在另一實施例中,該半導體晶圓包含鍺。
額外的態樣及優點從下面的較佳實施例的詳細描述中將會變得很明顯,這些描述係配合附圖來進行的。
一物質吸收雷射能量的能力決定該能量可實施剝離的深度。剝離深度是由該物質的吸收深度及該物質的蒸發熱來決定的。諸如波長,脈衝寬度持續時間,脈衝重複頻率,及光屬品質等參數都可加以控制用以改善切割速度及切割表面或切口的品質。在一實施例中,一或多個這些參數被加以選擇用以提供一剛好具有足夠的能量來剝離該目標物質的很低的注量(其典型地係以J/cm2
為單位來量測)。因此,被寄存在該物質中之超出的能量即可被減少或消除掉。使用一低的注量可降低或消除重鑄氧化物層,熱影響區,剝絡,裂痕,及屑片。因此,晶粒斷裂強度可被提高且可減少雷射後的清潔數量。
在一實施例中,波長範圍在約9微米至約11微米之間的雷射脈衝被用來刻劃一完工的半導體晶圓。該鈍態及/封包層被建構來吸收至些波長的脈衝能量的一大部分。因此,該該鈍態及/封包層在因為底下的層而被裂開及爆開之前即被剝離。又,矽基材在這些波長範圍內吸收很少的脈衝能量。因此,會造成裂痕之基材加熱很小或甚至是沒有。
該等雷射脈衝具有範圍在約130奈秒至約170奈秒之間的短的脈衝寬度。在一實施例中,一q開關CO2
雷射被用來產生雷射脈衝。熟習此技藝者將可瞭解到q開關是一種被用來藉由調制雷射腔(laser cavity)的品質係數而從雷射獲得能量短脈衝的技術。使用該q開關短脈衝CO2
雷射可消除或顯著地減少在晶圓刻劃及晶圓分切處理期間之缺口及裂痕。
短脈衝寬度被加以選擇用以提供比連續波(CW)脈衝或長的脈衝寬度更高的波峰能量。授予Mourou等人的美國專利第5,656,186號揭示了一物質的剝離門檻值為雷射脈衝寬度的函數。CW脈衝或具有長的脈衝寬度(譬如在毫秒範圍內)的脈衝與短的脈衝寬度比較起來,其通常需要較剝離門檻值。短的脈衝可提高波峰功率及降低熱傳導。因此,使用短的脈衝來刻劃完工的晶圓是較有效率的。其結果為一較快的刻劃處理。
為了方便起見,切割一詞可被廣義地使用且包括挖溝(trenching)(並未穿透目標工件的全部深度的切割)及穿透切割,其括切片(slicing)(通常係關於與晶圓列的分離)或分切(通常係有關於晶圓列的部件切割分離(part singulation))。切片及分切在本文中可被互換地使用。
現將參照附圖來說明,其中相同的標號代表類似的元件。為了清楚起見,標號的第一個數字代表該元件首次出現的圖號。在下面的說明中,許多的特定細節為了對本發明的實施例有更透澈的瞭解而被提供。然而,熟習此技藝者將可瞭解的是,本發明可在沒有這些特定的細節的一部分或全部下被實施,或用其它的方法,構件或物質來實施。又,在一些例子中,習知的結構,物質,或操作並未被詳細地示出或描述用以避免對本發明的精義形成不必要的蒙蔽。再者,在一或多個實施例中所描述的特徵,結構或特性可用任何適當的方式加以結合。
圖3為依據本發明的實施例刻劃的一示範性工件300的示意側視圖。該工件300包括一第一層302,一第二層2304,一第三層306,一第四層308。一第五層310及一形成在該基材314上的第六層312。熟習此技藝者將可瞭解到的是,層302,304,306,308,310及312可包括被絕緣層,包括低k介電質,分隔開的互連層用以形成電子電路。在此例子中,上兩層2302及304形成一鈍態及封包層。第一層302可包括二氧化矽(SiO2
)及第二層304可包括氮化矽(Siy
Nx
)。例如,第二層304可包括Si4
N3
。熟習此技藝者將可瞭解的是,其它的物質亦可被用來形成鈍態及/或封包層。
在此例子中,第三層306包含一金屬(如,銅或鋁),第四層308包含一介電質(如,SiN),第五層310包含一金屬(如,銅或鋁),及第六層312包含一低k介電質。低k介電質物質可包含一無機物質,譬如SiOF或SiOB,或一有機物質,譬如以聚亞醯胺為主的或以聚對二甲苯為主的聚合物。熟習此技藝者將可瞭解的是,本文中所提之用於層302,304,306,308,310及312的物質只是為了舉例,且其它種類的物質亦可被使用。又,熟習此技藝者將可瞭解,特定的IC中可使用比這更多或更少的層。如圖所示,基材314包含矽(Si)。然而,熟習此技藝者將可瞭解到,使用在IC製造中之其它物質亦可被用作為該基材208,這包括玻璃,聚合物,金屬,複合物,及其它物質。例如,基材208可包括FR4。
如上文中所討論的,層302,304,306,308,310及312形成電子電路。每個電路都被一刻劃線道或街道316(圖3中的以兩條垂直的虛線來表示)分隔開。為了要產生一個一個的IC,該工件300沿著街道316被刻劃、切穿或兩者都有。在某些實施例中,工件300係用雷射脈衝的光束來將層302,304,306,308,310及312中的一或多層剝離來實施刻劃。較佳地,本文中所討論的雷射刻劃處理產生在具有該街道316的區域中之均一的側壁之乾淨的切口且在該街道316外面的區域中沒有一般典型的雷射刻劃處理通常會產生的缺口及裂痕。
圖4A及4B為圖3中之工件300用傳統的雷射刻劃技術處理過後的示意側視圖。圖4A顯示被很少量地吸收或沒有被吸收之穿過該鈍態/封包層302,304的雷射脈衝能量402(如,波長範圍在約1064奈米至約266奈米之間)。但是,該雷射脈衝能量402在第三層306的區域406被吸收,這造成區域406被加熱。最終,該熱會造成區域406剝離或爆開。因此,層302,304的一部分會被爆開來。圖4B示意地顯示因爆炸所產生的切口408。切口408並部具有均一的側壁且(以缺口的形式)延伸至街道316外面,這會傷及IC。如上文中所討論的,圖2A及2B顯示此缺口。
圖5A及5B為示意側視圖其顯示圖3的工件300依據本發明的實施例用q開關的CO2
雷射刻劃技術加以處理。該CO2
雷射提供一雷射光束其包含波長範圍在約9微米至約11微米之間之一連串的雷射脈衝,且脈衝寬度持續時間是在約130奈秒至約170奈秒之間。
該鈍態/封包層302,304被建構來吸收該CO2
雷射所產生的脈衝的能量。又,短的脈衝具有高的波峰能量其可快速地且有效率地將鈍態/封包層302,304剝離,用以產生具有均一的側壁之乾淨的切口。此外,矽基材314對於CO2
雷射所產生的脈衝的波長是可透射的。因此,基材314所吸收之由該CO2
雷射所產生的脈衝的能量很少或甚至沒有吸收,且遭受的加熱很少或甚至是沒有加熱。
如圖5A所示,在一實施例中,該CO2
雷射藉由剝離該鈍態/封包層302,304而被用來刻劃該工件300用以在該街道316的區域內產生一切口502。該切口502具有大致均一的側壁及一大致平的底部。在一些實施例中,由該CO2
雷射所產生的波長在剝離金熟(如,層306,310)上並不如其在剝離該鈍態/封包層302,304般地有效。因此,如圖5A的實施例中所示,該CO2
雷射只被用來剝離該鈍態/封包層302,304。
其餘的層306,308,310,312可使用傳統的鋸切或雷射刻劃技術來加以刻劃。例如,層306,308,310及312可使用在微微秒範圍內之近紅外線脈衝來加以刻劃。基材314亦可使用傳統的鋸切或雷射剝離技術來切割。例如,波長約266奈米的雷射可被用來有效地且乾淨地切割基材314。
如圖5B所示,在另一實施例中,該CO2
雷射藉由剝離層302,304,306,308,310及312而被用來刻劃該工件300用以在該街道316的區域內產生一切口504。該切口504具有大致均一的側壁及一大致平的底部。雖然範圍在約9微米至約11微米的波長在剝離金屬上較沒有效率,但它們仍可在充分加熱之後剝離金屬。因此,在圖5B所示的實施例中,本文中所述的CO2
雷射可被用作為一單一處理用以產生一從第一層302的上表面延伸至基材314的上表面的切口504。如上文中討論過的,矽基材對於範圍在約9微米至約11微米之間的波長是可穿透的。因此,用CO2
雷射來切割基材314是很不足的。因此,在刻劃之後,基材可使用傳統的鋸切或雷射剝離技術來切割。
圖6A-6C為使用依據本發明的實施例的q開關CO2
雷射來刻劃穿透鈍態/封包層的切口610,612,614的電子顯微鏡照片。如上文中討論過的,CO2
雷射產生的雷射脈衝具有範圍在約9微米至約11微米之間的波長,及範圍在約130奈秒至約170奈秒之間的脈衝寬度持續時間。在圖6A-6C中可觀察到的切口,裂痕或污染很少,或甚至是沒有。因此,可獲得較高的晶粒斷裂強度及總體的處理良率。
圖7為依據本發明的一實施例使用q開關CO2
雷射及一高斯微微秒脈衝雷射束刻劃完工的半導體晶圓708的電子顯微鏡照片。如圖7所示,一q開關雷射刻劃在該完工的晶圓708的鈍態/封包層中出一第一切口710。然後,一高斯微微秒脈衝雷射束刻劃一第二切口712穿過該完工的晶圓708的其餘層。為了示範的目的,該第二切口712在區域714中亦延伸超過該第一切口710。在該完工的晶圓708首先用該q開關CO2
雷射加以刻劃的地方,切口710,712具有平滑的邊緣且產生的缺口很少或甚至是沒有。然而,在沒有使用q開關CO2
雷射的區域714中,該高斯微微秒脈衝雷射束會在鈍態/封包層中產生缺口。
對於熟習此技藝者很明顯的是,在不偏離本發明的基本原理下可達成許多對於上述實施例的細節的改變。因此,本發明的範圍應只由下面的申請專利範圍來界定。
110...邊緣
112...邊緣
113...邊緣
114...完工的晶圓
116...完工的晶圓
118...完工的晶圓
210...切口
212...切口
214...晶圓
216...晶圓
300...工件
302...第一層
304...第二層
306...第三層
308...第四層
310...第五層
312...第六層
314...基材
316...街道
402...雷射脈衝能量
406...區域
408...切口
502...切口
504...切口
610...切口
612...切口
614...切口
708...完工的半導體晶圓
710...第二切口
712...第一切口
714...區域
圖1A-1C為使用一傳統的機械式鋸子切穿完工的晶圓之切口的電子顯微鏡照片。
圖2A及2B為使用波長分別為1064奈米及355奈米的雷射在完工的晶圓上刻劃出的切口的電子顯微鏡照片。
圖3為依據本發明的實施例刻劃的一示範性工件的示意側視圖。
圖4A及4B為示意側視圖其顯示圖3的工件依據傳統的雷射刻劃技術加以處理。
圖5A及5B為示意側視圖其顯示圖3的工件依據本發明的實施例用q開關的CO2
雷射刻劃技術加以處理。
圖6A-6C為使用依據本發明的實施例的q開關CO2
雷射來刻劃穿透鈍態/封包層的切口的電子顯微鏡照片。
圖7為依據本發明的一實施例使用q開關CO2
雷射及一高斯微微秒脈衝雷射束刻劃穿透鈍態/封包層的切口的電子顯微鏡照片。
300...工件
302...第一層
304...第二層
306...第三層
308...第四層
310...第五層
312...第六層
314...基材
316...街道
Claims (19)
- 一種用來刻劃其上或其內形成有複數個積體電路的基材的方法,該等積體電路被一或多條街道(street)分隔開,該方法包含:產生一或多個具有一波長及一脈衝寬度持續時間的雷射脈衝;其中該波長經過選擇使得該一或多個雷射脈衝可被目標物質實質地吸收,該目標物質包含形成在該基材上的一鈍態層及一封包層的至少一者;其中該波長被進一步加以選擇使得該基材對該一或多個脈衝是實質上可穿透的;及其中該一或多個雷射脈衝的每一雷射脈衝的該脈衝寬度持續時間被選擇在約130奈秒至約170奈秒的範圍之內,用以降低該目標物質的剝離門檻值;及用具有該被選取的波長及該被選取的脈衝寬度持續時間的該一或多個雷射脈衝來剝離(ablating)該目標物質的一部分。
- 如申請專利範圍第1項所述之用來刻劃其上或其內形成有複數個積體電路之基材的方法,更包含用CO2 雷射來產生該一或多個雷射脈衝。
- 如申請專利範圍第2項所述之用來刻劃其上或其內形成有複數個積體電路之基材的方法,更包含q開關該CO2 雷射。
- 如申請專利範圍第1項所述之用來刻劃其上或其內 形成有複數個積體電路之基材的方法,其中該波長是在9微米至11微米的範圍之內。
- 如申請專利範圍第1項所述之用來刻劃其上或其內形成有複數個積體電路之基材的方法,其中該鈍態層及該封包層的至少一者包含二氧化矽。
- 如申請專利範圍第1項所述之用來刻劃其上或其內形成有複數個積體電路之基材的方法,其中該鈍態層及該封包層的至少一者包含氮化矽。
- 如申請專利範圍第1項所述之用來刻劃其上或其內形成有複數個積體電路之基材的方法,其中該基材包含矽。
- 如申請專利範圍第1項所述之用來刻劃其上或其內形成有複數個積體電路之基材的方法,更包含用該一或多個雷射脈衝將形成在該基材上的金屬層的一部分剝離。
- 一種積體電路,其係用申請專利範圍第1項的方法加以刻劃的。
- 一種用來刻劃一半導體晶圓的方法,該方法包含:用一或多個雷射脈衝來剝離形成在該半導體晶圓上的一或多層的一部分,該一或多個雷射脈衝具有一在9微米至11微米範圍內之波長;其中該一或多個雷射脈衝的每一雷射脈衝具有在130奈秒至170奈秒範圍內之脈衝寬度持續時間。
- 如申請專利範圍第10項所述之用來刻劃一半導體 晶圓的方法,其中該一或多層包含一鈍態層及一封包層的至少一者。
- 如申請專利範圍第11項所述之用來刻劃一半導體晶圓的方法,其中該鈍態層及該封包層的至少一者包含二氧化矽。
- 如申請專利範圍第11項所述之用來刻劃一半導體晶圓的方法,其中該鈍態層及該封包層的至少一者包含氮化矽。
- 如申請專利範圍第10項所述之用來刻劃一半導體晶圓的方法,更包含用CO2 雷射來產生該一或多個雷射脈衝。
- 如申請專利範圍第14項所述之用來刻劃一半導體晶圓的方法,更包含q開關該CO2 雷射。
- 如申請專利範圍第10項所述之用來刻劃一半導體晶圓的方法,更包含用一或多個雷射脈衝來剝離一金屬層的一部分。
- 如申請專利範圍第10項所述之用來刻劃一半導體晶圓的方法,其中該半導體晶圓對於該一或多個雷射脈衝是實質上可透射的。
- 如申請專利範圍第17項所述之用來刻劃一半導體晶圓的方法,其中該半導體晶圓包含矽。
- 一種積體電路,其係用申請專利範圍第10項的方法加以刻劃的。
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GB2452429A (en) | 2009-03-04 |
WO2008027634A3 (en) | 2009-11-26 |
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TW200802583A (en) | 2008-01-01 |
CN101681876A (zh) | 2010-03-24 |
WO2008027634A2 (en) | 2008-03-06 |
US20070272666A1 (en) | 2007-11-29 |
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