TW200725745A - Method for forming semiconductor device having fin structure - Google Patents
Method for forming semiconductor device having fin structureInfo
- Publication number
- TW200725745A TW200725745A TW095113623A TW95113623A TW200725745A TW 200725745 A TW200725745 A TW 200725745A TW 095113623 A TW095113623 A TW 095113623A TW 95113623 A TW95113623 A TW 95113623A TW 200725745 A TW200725745 A TW 200725745A
- Authority
- TW
- Taiwan
- Prior art keywords
- forming
- gate
- semiconductor device
- fin structure
- over
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 238000002955 isolation Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 239000007772 electrode material Substances 0.000 abstract 1
- 125000006850 spacer group Chemical group 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050135233A KR100720232B1 (ko) | 2005-12-30 | 2005-12-30 | 핀 구조의 반도체 소자의 형성방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200725745A true TW200725745A (en) | 2007-07-01 |
TWI317977B TWI317977B (en) | 2009-12-01 |
Family
ID=38214343
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095113623A TWI317977B (en) | 2005-12-30 | 2006-04-17 | Method for forming semiconductor device having fin structure |
Country Status (5)
Country | Link |
---|---|
US (1) | US7566621B2 (zh) |
JP (1) | JP2007184518A (zh) |
KR (1) | KR100720232B1 (zh) |
CN (1) | CN100573849C (zh) |
TW (1) | TWI317977B (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100577562B1 (ko) * | 2004-02-05 | 2006-05-08 | 삼성전자주식회사 | 핀 트랜지스터 형성방법 및 그에 따른 구조 |
KR100799121B1 (ko) * | 2005-12-22 | 2008-01-29 | 주식회사 하이닉스반도체 | 벌브 리세스 게이트를 갖는 반도체 소자의 제조방법 |
KR100704475B1 (ko) * | 2005-12-28 | 2007-04-09 | 주식회사 하이닉스반도체 | 듀얼 폴리 리세스 게이트를 갖는 반도체 소자의 제조방법 |
KR100838378B1 (ko) * | 2006-09-29 | 2008-06-13 | 주식회사 하이닉스반도체 | 핀트랜지스터의 제조 방법 |
KR100762912B1 (ko) * | 2006-09-30 | 2007-10-08 | 주식회사 하이닉스반도체 | 비대칭의 벌브형 리세스 게이트를 갖는 반도체 소자 및그의 제조방법 |
KR100968151B1 (ko) * | 2008-05-06 | 2010-07-06 | 주식회사 하이닉스반도체 | 핀 구조의 채널을 갖는 반도체 소자 및 그 제조방법 |
KR101004482B1 (ko) * | 2008-05-27 | 2010-12-31 | 주식회사 하이닉스반도체 | 반도체 소자의 형성 방법 |
KR101113794B1 (ko) | 2008-08-04 | 2012-02-27 | 주식회사 하이닉스반도체 | 반도체 장치 제조 방법 |
KR101061321B1 (ko) * | 2009-03-02 | 2011-08-31 | 주식회사 하이닉스반도체 | 융기된 랜딩 플러그 콘택을 갖는 새들 핀 트랜지스터 및 그형성 방법 |
US8552478B2 (en) * | 2011-07-01 | 2013-10-08 | Nanya Technology Corporation | Corner transistor and method of fabricating the same |
KR101595780B1 (ko) | 2014-08-14 | 2016-02-19 | 경북대학교 산학협력단 | GaN-Fin 구조 및 FinFET를 제조하는 방법 및 이러한 방법으로 제조된 GaN-Fin 구조를 사용하는 소자 및 FinFET |
US9911806B2 (en) | 2015-05-22 | 2018-03-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Solvent-based oxidation on germanium and III-V compound semiconductor materials |
TWI699885B (zh) | 2016-03-22 | 2020-07-21 | 聯華電子股份有限公司 | 半導體結構與其製作方法 |
US10242882B2 (en) | 2017-06-12 | 2019-03-26 | International Business Machines Corporation | Cyclic etch process to remove dummy gate oxide layer for fin field effect transistor fabrication |
US11417369B2 (en) * | 2019-12-31 | 2022-08-16 | Etron Technology, Inc. | Semiconductor device structure with an underground interconnection embedded into a silicon substrate |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5372960A (en) * | 1994-01-04 | 1994-12-13 | Motorola, Inc. | Method of fabricating an insulated gate semiconductor device |
US5362665A (en) * | 1994-02-14 | 1994-11-08 | Industrial Technology Research Institute | Method of making vertical DRAM cross point memory cell |
US5518950A (en) * | 1994-09-02 | 1996-05-21 | Advanced Micro Devices, Inc. | Spin-on-glass filled trench isolation method for semiconductor circuits |
US5851928A (en) * | 1995-11-27 | 1998-12-22 | Motorola, Inc. | Method of etching a semiconductor substrate |
US6297128B1 (en) * | 1999-01-29 | 2001-10-02 | Vantis Corporation | Process for manufacturing shallow trenches filled with dielectric material having low mechanical stress |
KR100295782B1 (ko) * | 1999-07-03 | 2001-07-12 | 윤종용 | 얕은 트렌치 소자분리 방법 |
JP4860022B2 (ja) * | 2000-01-25 | 2012-01-25 | エルピーダメモリ株式会社 | 半導体集積回路装置の製造方法 |
KR100568854B1 (ko) * | 2003-06-17 | 2006-04-10 | 삼성전자주식회사 | 반도체 메모리에서의 리세스 채널을 갖는 트랜지스터 형성방법 |
KR100517559B1 (ko) * | 2003-06-27 | 2005-09-28 | 삼성전자주식회사 | 핀 전계효과 트랜지스터 및 그의 핀 형성방법 |
US7326619B2 (en) * | 2003-08-20 | 2008-02-05 | Samsung Electronics Co., Ltd. | Method of manufacturing integrated circuit device including recessed channel transistor |
KR100506460B1 (ko) | 2003-10-31 | 2005-08-05 | 주식회사 하이닉스반도체 | 반도체소자의 트랜지스터 및 그 형성방법 |
KR100577562B1 (ko) * | 2004-02-05 | 2006-05-08 | 삼성전자주식회사 | 핀 트랜지스터 형성방법 및 그에 따른 구조 |
JP2006054431A (ja) * | 2004-06-29 | 2006-02-23 | Infineon Technologies Ag | トランジスタ、メモリセルアレイ、および、トランジスタ製造方法 |
US7442609B2 (en) * | 2004-09-10 | 2008-10-28 | Infineon Technologies Ag | Method of manufacturing a transistor and a method of forming a memory device with isolation trenches |
US7189617B2 (en) * | 2005-04-14 | 2007-03-13 | Infineon Technologies Ag | Manufacturing method for a recessed channel array transistor and corresponding recessed channel array transistor |
DE102005047058B4 (de) * | 2005-09-30 | 2009-09-24 | Qimonda Ag | Herstellungsverfahren für einen Graben-Transistor und entsprechender Graben-Transistor |
US7402856B2 (en) * | 2005-12-09 | 2008-07-22 | Intel Corporation | Non-planar microelectronic device having isolation element to mitigate fringe effects and method to fabricate same |
US20090014810A1 (en) * | 2007-06-26 | 2009-01-15 | Eun-Jong Shin | Method for fabricating shallow trench isolation and method for fabricating transistor |
-
2005
- 2005-12-30 KR KR1020050135233A patent/KR100720232B1/ko not_active IP Right Cessation
-
2006
- 2006-04-17 TW TW095113623A patent/TWI317977B/zh not_active IP Right Cessation
- 2006-04-26 CN CNB2006100770539A patent/CN100573849C/zh not_active Expired - Fee Related
- 2006-04-27 US US11/411,864 patent/US7566621B2/en not_active Expired - Fee Related
- 2006-05-29 JP JP2006148488A patent/JP2007184518A/ja not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
KR100720232B1 (ko) | 2007-05-23 |
TWI317977B (en) | 2009-12-01 |
US7566621B2 (en) | 2009-07-28 |
CN100573849C (zh) | 2009-12-23 |
US20070155148A1 (en) | 2007-07-05 |
CN1992201A (zh) | 2007-07-04 |
JP2007184518A (ja) | 2007-07-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200725745A (en) | Method for forming semiconductor device having fin structure | |
TW200709333A (en) | Method for fabricating semiconductor device | |
TW200634930A (en) | Method for fabricating semiconductor device | |
TW200742045A (en) | Semiconductor device having a recess channel transistor | |
TW200707577A (en) | Semiconductor device and method of fabricating the same | |
TW200711054A (en) | A method of manufacturing a transistor and a method of forming a memory device | |
TW200633125A (en) | Semiconductor device and method of semiconductor device | |
TWI268551B (en) | Method of fabricating semiconductor device | |
JP2007520891A5 (zh) | ||
WO2006053055A3 (en) | High-voltage transistor fabrication with trench etching technique | |
WO2009019837A1 (ja) | 炭化珪素半導体素子およびその製造方法 | |
TW200638509A (en) | Method for fabricating transistor of semiconductor device | |
JP2009532875A5 (zh) | ||
JP2010147477A5 (zh) | ||
TW200614507A (en) | Finfet transistor process | |
TW200607094A (en) | Semiconductor device and method of manufacturing thereof | |
TW200725756A (en) | Method for forming a semiconductor structure and structure thereof | |
TW200711005A (en) | Method of forming a semiconductor device having asymmetric dielectric regions and structure thereof | |
EP2230686A3 (en) | Method of manufacturing semiconductor device | |
TW200713492A (en) | Method for fabricating semiconductor device having taper type trench | |
TW200731509A (en) | Semiconductor device and manufacturing method thereof | |
TW200703641A (en) | Semiconductor device and fabrication method thereof | |
WO2011071598A3 (en) | Quantum-well-based semiconductor devices | |
TW200729409A (en) | Method for fabricating semiconductor device | |
TW200635044A (en) | Quasi-planar and finfet-like transistors on bulk silicon |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |