TW200720412A - Polishing agent, method for polishing surface to be polished, and method for manufacturing semiconductor integrated circuit device - Google Patents

Polishing agent, method for polishing surface to be polished, and method for manufacturing semiconductor integrated circuit device

Info

Publication number
TW200720412A
TW200720412A TW095131184A TW95131184A TW200720412A TW 200720412 A TW200720412 A TW 200720412A TW 095131184 A TW095131184 A TW 095131184A TW 95131184 A TW95131184 A TW 95131184A TW 200720412 A TW200720412 A TW 200720412A
Authority
TW
Taiwan
Prior art keywords
polishing
integrated circuit
semiconductor integrated
circuit device
polishing agent
Prior art date
Application number
TW095131184A
Other languages
English (en)
Inventor
Satoshi Takemiya
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of TW200720412A publication Critical patent/TW200720412A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW095131184A 2005-09-09 2006-08-24 Polishing agent, method for polishing surface to be polished, and method for manufacturing semiconductor integrated circuit device TW200720412A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005261747 2005-09-09

Publications (1)

Publication Number Publication Date
TW200720412A true TW200720412A (en) 2007-06-01

Family

ID=37835588

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095131184A TW200720412A (en) 2005-09-09 2006-08-24 Polishing agent, method for polishing surface to be polished, and method for manufacturing semiconductor integrated circuit device

Country Status (7)

Country Link
US (1) US20080200033A1 (zh)
EP (1) EP1930938A4 (zh)
JP (1) JPWO2007029465A1 (zh)
KR (1) KR20080042043A (zh)
CN (1) CN101263583B (zh)
TW (1) TW200720412A (zh)
WO (1) WO2007029465A1 (zh)

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CN1955248B (zh) * 2005-10-28 2011-10-12 安集微电子（上海）有限公司 钽阻挡层用化学机械抛光浆料
US20100176335A1 (en) * 2007-06-08 2010-07-15 Techno Semichem Co., Ltd. CMP Slurry Composition for Copper Damascene Process
JP5646996B2 (ja) * 2007-09-21 2014-12-24 キャボット マイクロエレクトロニクス コーポレイション 研磨組成物およびアミノシランを用いて処理された研削剤粒子の使用方法
JP2009123880A (ja) * 2007-11-14 2009-06-04 Showa Denko Kk 研磨組成物
JP5403924B2 (ja) * 2008-02-29 2014-01-29 富士フイルム株式会社 金属用研磨液、および化学的機械的研磨方法
US9548211B2 (en) * 2008-12-04 2017-01-17 Cabot Microelectronics Corporation Method to selectively polish silicon carbide films
WO2010090024A1 (ja) * 2009-02-04 2010-08-12 日立金属株式会社 炭化珪素単結晶基板およびその製造方法
TW201124514A (en) * 2009-10-23 2011-07-16 Nitta Haas Inc Composition for polishing silicon carbide
JP4827963B2 (ja) * 2009-12-11 2011-11-30 国立大学法人九州大学 炭化珪素の研磨液及びその研磨方法
JP5819076B2 (ja) * 2010-03-10 2015-11-18 株式会社フジミインコーポレーテッド 研磨用組成物
JP2011218494A (ja) * 2010-04-09 2011-11-04 Mitsui Mining & Smelting Co Ltd 研摩スラリー及びその研摩方法
US8232208B2 (en) * 2010-06-15 2012-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized chemical mechanical polishing composition and method of polishing a substrate
WO2013016779A1 (en) * 2011-08-03 2013-02-07 The University Of Sydney Methods, systems and compositions for polishing
JP6068791B2 (ja) * 2011-11-25 2017-01-25 株式会社フジミインコーポレーテッド 研磨用組成物
WO2013077370A1 (ja) * 2011-11-25 2013-05-30 株式会社 フジミインコーポレーテッド 研磨用組成物
JP6140390B2 (ja) * 2012-03-16 2017-05-31 株式会社フジミインコーポレーテッド 研磨用組成物
JP6095897B2 (ja) * 2012-03-16 2017-03-15 株式会社フジミインコーポレーテッド 研磨用組成物
KR102028217B1 (ko) 2011-11-25 2019-10-02 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
US9688884B2 (en) 2011-11-25 2017-06-27 Fujimi Incorporated Polishing composition
CN103146306B (zh) * 2011-12-07 2016-12-28 安集微电子（上海）有限公司 一种tsv阻挡层抛光液
WO2013099595A1 (ja) * 2011-12-27 2013-07-04 旭硝子株式会社 研磨剤用添加剤および研磨方法
EP3333232B1 (en) 2012-05-10 2020-03-04 Versum Materials US, LLC Chemical mechanical polishing composition having chemical additives and methods for using
US8999193B2 (en) 2012-05-10 2015-04-07 Air Products And Chemicals, Inc. Chemical mechanical polishing composition having chemical additives and methods for using same
JP6360311B2 (ja) * 2014-01-21 2018-07-18 株式会社フジミインコーポレーテッド 研磨用組成物およびその製造方法
CN113122147B (zh) * 2019-12-31 2024-03-12 安集微电子科技（上海）股份有限公司 一种化学机械抛光液及其使用方法
TW202311461A (zh) * 2020-07-20 2023-03-16 美商Ｃｍｃ材料股份有限公司 矽晶圓拋光組合物及方法

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JP4435434B2 (ja) * 2001-01-12 2010-03-17 日油株式会社 エステルワックスおよび該ワックスを用いたトナー
KR100952870B1 (ko) * 2001-10-26 2010-04-13 아사히 가라스 가부시키가이샤 연마제, 그 제조방법 및 연마방법
CN101058713B (zh) * 2001-10-31 2011-02-09 日立化成工业株式会社 研磨液及研磨方法
JP3916046B2 (ja) * 2001-12-21 2007-05-16 リコープリンティングシステムズ株式会社 インクジェットヘッド用インク組成物及びそのインク組成物で印刷された被印刷体
JP3748410B2 (ja) * 2001-12-27 2006-02-22 株式会社東芝 研磨方法及び半導体装置の製造方法
JP2003332297A (ja) * 2002-05-10 2003-11-21 Daikin Ind Ltd エッチング液及びエッチング方法
JP2004015560A (ja) * 2002-06-07 2004-01-15 Kenwood Corp 無線通信装置および端末システム
JP2004051679A (ja) * 2002-07-17 2004-02-19 Ishizuka Glass Co Ltd 難燃剤および難燃性樹脂組成物
KR101068068B1 (ko) * 2002-07-22 2011-09-28 아사히 가라스 가부시키가이샤 반도체용 연마제, 그 제조 방법 및 연마 방법
CN100377310C (zh) * 2003-01-31 2008-03-26 日立化成工业株式会社 Cmp研磨剂以及研磨方法
US6916742B2 (en) * 2003-02-27 2005-07-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Modular barrier removal polishing slurry
JP2005014206A (ja) * 2003-05-30 2005-01-20 Sumitomo Chemical Co Ltd 金属研磨剤組成物
JP2005064285A (ja) * 2003-08-14 2005-03-10 Hitachi Chem Co Ltd Ｃｍｐ用研磨液及び研磨方法
JP2005116873A (ja) * 2003-10-09 2005-04-28 Hitachi Chem Co Ltd Ｃｍｐ研磨材および基板の研磨方法
JP2005294798A (ja) * 2004-03-08 2005-10-20 Asahi Glass Co Ltd 研磨剤および研磨方法
JP2007012679A (ja) * 2005-06-28 2007-01-18 Asahi Glass Co Ltd 研磨剤および半導体集積回路装置の製造方法
WO2008004579A1 (fr) * 2006-07-05 2008-01-10 Hitachi Chemical Co., Ltd. Liquide de polissage pour cmp et procédé de polissage

Also Published As

Publication number Publication date
EP1930938A4 (en) 2010-03-24
US20080200033A1 (en) 2008-08-21
CN101263583A (zh) 2008-09-10
EP1930938A1 (en) 2008-06-11
JPWO2007029465A1 (ja) 2009-03-19
WO2007029465A1 (ja) 2007-03-15
CN101263583B (zh) 2010-05-26
KR20080042043A (ko) 2008-05-14

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