US9688884B2 - Polishing composition - Google Patents

Polishing composition Download PDF

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US9688884B2
US9688884B2 US14/359,252 US201214359252A US9688884B2 US 9688884 B2 US9688884 B2 US 9688884B2 US 201214359252 A US201214359252 A US 201214359252A US 9688884 B2 US9688884 B2 US 9688884B2
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Prior art keywords
polishing composition
polishing
abrasive grains
particle diameter
average
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US20140342562A1 (en
Inventor
Shuugo Yokota
Yasuyuki Yamato
Satoru Yarita
Tomohiko Akatsuka
Shuichi TAMADA
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Fujimi Inc
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Fujimi Inc
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Priority claimed from JP2011258342A external-priority patent/JP6068790B2/en
Priority claimed from JP2012061155A external-priority patent/JP6140390B2/en
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Assigned to FUJIMI INCORPORATED reassignment FUJIMI INCORPORATED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: AKATSUKA, TOMOHIKO, Tamada, Shuichi, YAMATO, YASUYUKI, YARITA, Satoru, YOKOTA, SHUUGO
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8258—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213, H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256

Definitions

  • the present invention relates to a polishing composition to be used for polishing an object including a portion containing a high-mobility material (hereinafter, also referred to as a high-mobility material portion), such as a group IV material and a group III-V compound, and a portion containing a silicon material (hereinafter, also referred to as a silicon material portion), such as silicon oxide.
  • a high-mobility material hereinafter, also referred to as a high-mobility material portion
  • silicon material portion such as silicon oxide.
  • the present invention also relates to a polishing method and substrate production method using the polishing composition.
  • Group III-V compounds such as gallium arsenide (GaAs), and group IV materials, such as silicon germanium (SiGe) and germanium (Ge), have higher electron and hole mobility than that of silicon and an excellent carrier transport property, and are expected as next-generation semiconductor high-mobility channel materials.
  • GaAs gallium arsenide
  • group IV materials such as silicon germanium (SiGe) and germanium (Ge)
  • a channel using a high-mobility material can be formed by polishing an object including a high-mobility material portion and a silicon material portion.
  • a polishing composition that can non-selectively polish and remove the high-mobility material portion and the silicon material portion, the high-mobility material portion and the silicon material portion can be simultaneously polished.
  • the non-selective polishing of the high-mobility material portion and the silicon material portion enables a desired pattern shape to be formed in a suitable manner without producing a level difference between the high-mobility material portion and the silicon material portion.
  • both a polishing composition conventionally used for polishing a group IV compound semiconductor substrate and described in, for example, Patent Document 1 or 2 and a polishing composition conventionally used for polishing a group III-V compound semiconductor substrate and described in, for example, Patent Document 3 or 4 are inferior in the capability of efficiently and non-selectively polishing and removing a high-mobility material portion and a silicon material portion.
  • Those conventional polishing compositions are thus unsuitable for the purpose of simultaneously polishing a high-mobility material portion and a silicon material portion.
  • Patent Document 1 Japanese Laid-Open Patent Publication No. 2010-130009
  • Patent Document 2 Japanese National Phase Laid-Open Patent Publication No. 2010-519740
  • Patent Document 3 Japanese Laid-Open Patent Publication No. 63-150155
  • Patent Document 4 Japanese Laid-Open Patent Publication No. 2004-327614
  • the present inventors have completed the present invention based on a finding that when a high-mobility material portion and a silicon material portion, which have chemical characteristics significantly different from each other, are simultaneously polished, the high-mobility material portion and the silicon portion can be non-selectively and effectively polished and removed if a mechanical action by abrasive grains or the like rather than a chemical action by an additive in a polishing composition is made into the rate determining factor for effects on the object to be polished.
  • a polishing composition to be used for polishing an object including a high-mobility material portion and a silicon material portion.
  • the polishing composition contains odd-shaped abrasive grains and an oxidizing agent having a standard electrode of 0.3 V or more, and has a pH of 1 or more and 6 or less, or 8 or more and 14 or less.
  • the abrasive grains have an average degree of association, obtained by dividing an average secondary particle diameter value of the abrasive grains by an average primary particle diameter value of the abrasive grains, is preferably 1.6 or more.
  • the abrasive grains may each have a surface with protrusions, which are referred to as spiky-shaped particles.
  • part of the particles has larger particle diameters than the volume average particle diameter of the particles, and the average of values respectively obtained by dividing the height of a protrusion on the surface of each particle belonging to the part of the particles by the width of a base portion of the same protrusion is preferably 0.245 or more.
  • Protrusions on the surfaces of particles which belong to the part of the particles each having the surface with the plurality of protrusions and have larger particle diameters than the volume average particle diameter of the particles have an average height of preferably 2.5 nm or more.
  • the polishing composition of the first aspect may further contain a salt.
  • the salt is preferably an ammonium salt.
  • a method for polishing an object including a high-mobility material portion and a silicon material portion with the polishing composition of the first aspect.
  • a method for producing a substrate by polishing an object including a high-mobility material portion and a silicon material portion with the polishing composition of the first aspect is provided.
  • the present invention succeeds in providing a polishing composition suitable for the purpose of simultaneously polishing a high-mobility material portion and a silicon material portion, and a polishing method and substrate production method using the polishing composition.
  • FIG. 1 is a diagram showing a projected contour of an outer shape of a particle that has a surface with protrusions and can be used as an abrasive grain contained in a polishing composition according to an embodiment of the present invention.
  • a polishing composition of the present embodiment is prepared by mixing specific abrasive grains and a specific oxidizing agent with water.
  • the polishing composition has a pH adjusted to the range of 1 or more and 6 or less, or 8 or more and 14 or less by adding a pH adjusting agent as required. Accordingly, the polishing composition contains specific abrasive grains and a specific oxidizing agent, and further contains a pH adjusting agent as required.
  • the polishing composition is used for polishing an object including a high-mobility material portion and a silicon material portion, and specifically for the purpose of simultaneously polishing a high-mobility material portion and a silicon material portion in an application for polishing the object to produce a substrate.
  • a high-mobility material as referred to here means a material having higher electron or hole mobility than that of a silicon material.
  • the high-mobility material examples include group III-V compounds, such as gallium phosphide (GaP), indium phosphide (InP), gallium arsenide (GaAs), indium arsenide (InAs), and indium antimonide (InSb) and group IV materials, such as silicon germanium (SiGe), germanium (Ge), and silicon carbide (SiC).
  • group III-V compounds such as gallium phosphide (GaP), indium phosphide (InP), gallium arsenide (GaAs), indium arsenide (InAs), and indium antimonide (InSb)
  • group IV materials such as silicon germanium (SiGe), germanium (Ge), and silicon carbide (SiC).
  • the silicon material examples include polysilicon, silicon oxide, and silicon nitride.
  • the silicon material has an electron mobility of 1,600 cm 2 /V ⁇ s and a hole mobility of 430 cm 2 /
  • the high-mobility material that is, indium phosphide has an electron mobility of 5,400 cm 2 /V ⁇ s and a hole mobility of 200 cm 2 /V ⁇ s; gallium arsenide has an electron mobility of 8,500 cm 2 /V ⁇ s and a hole mobility of 400 cm 2 /V ⁇ s; indium arsenide has an electron mobility of 40,000 cm 2 /V ⁇ s and a hole mobility of 500 cm 2 /V ⁇ s; indium antimonide has an electron mobility of 77,000 cm 2 /V ⁇ s and a hole mobility of 850 cm 2 /V ⁇ s; and germanium has an electron mobility of 3,900 cm 2 /V ⁇ s and a hole mobility of 1,900 cm 2 /V ⁇ s.
  • the high-mobility material has at least one of electron mobility and hole mobility values significantly higher than that of the silicon material.
  • the abrasive grains contained in the polishing composition have an odd shape, i.e., a non-spherical shape.
  • the polishing rate of the high-mobility material portion and silicon material portion, in particular, the polishing rate of the silicon material portion with the polishing composition is advantageously enhanced as compared with the case where abrasive grains having a non-odd shape, i.e., a spherical shape are used.
  • Typical examples of the odd-shaped abrasive grains include particles each having a constricted central portion, which are referred to as peanut shell-shaped particles, and particles each having a surface with protrusions, which are referred to as spiky-shaped particles.
  • the average number of protrusions that each particle has on the surface thereof is preferably 3 or more, and more preferably 5 or more.
  • a protrusion as referred to here has a sufficiently small height and width in comparison to the particle diameter of an abrasive grain. Further, a protrusion is such that the length of a portion shown in FIG. 1 as a curve AB which passes through a point A and a point B does not exceed one-fourth of the circumferential length of the maximum inscribed circle of an abrasive grain particle, or more accurately, the circumferential length of the maximum circle inscribed in a projected contour of the outer shape of the abrasive grain particle.
  • the width of a protrusion refers to a width of a base portion of the protrusion, and is expressed in FIG. 1 as the distance between the point A and the point B.
  • the height of a protrusion refers to a distance between the base portion of the protrusion and a portion of the protrusion furthest from the base portion, and is expressed in FIG. 1 as the length of a segment CD which is orthogonal to a straight line AB.
  • the abrasive grains in the polishing composition contain particles each having a surface with protrusions, part of the particles has larger particle diameters than the volume average particle diameter of the particles, and the average of values respectively obtained by dividing the height of a protrusion on the surface of each particle belonging to the part of the particles by the width of a base portion of the same protrusion is preferably 0.245 or more, and more preferably 0.255 or more.
  • the polishing rate of the high-mobility material portion and silicon material portion in particular, the polishing rate of the silicon material portion with the polishing composition is enhanced because the shapes of the protrusions are comparatively sharp.
  • the height of each protrusion of an abrasive grain particle and the width of the protrusion at the base portion can be determined by using general image analysis software to analyze an image of the abrasive grain particle taken by a scanning electron microscope.
  • protrusions on the surfaces of particles which belong to the part of the particles each having the surface with the plurality of protrusions and have larger particle diameters than the volume average particle diameter of the particles have an average height of preferably 2.5 nm or more, more preferably 2.7 nm or more, and still more preferably 3.0 nm or more.
  • the polishing rate of the high-mobility material portion and silicon material portion in particular, the polishing rate of the silicon material portion with the polishing composition is enhanced.
  • the abrasive grains in the polishing composition may be any of inorganic particles and organic particles.
  • inorganic particles include particles made of a metal oxide, such as silica, alumina, ceria, and titania.
  • organic particles include polymethyl methacrylate (PMMA) particles. Among them, silica particles are preferable, and colloidal silica is particularly preferable.
  • the content of the abrasive grains in the polishing composition is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, and still more preferably 1% by mass or more. As the abrasive grain content increases, the polishing rate of the high-mobility material portion and silicon material portion, in particular, the polishing rate of the silicon material portion with the polishing composition is enhanced.
  • the content of the abrasive grains in the polishing composition is also preferably 30% by mass or less, more preferably 25% by mass or less, and still more preferably 20% by mass or less. As the abrasive grain content decreases, the material cost of the polishing composition can be reduced, and additionally, the aggregation of the abrasive grains is less likely to occur.
  • the average primary particle diameter of the abrasive grains is preferably 5 nm or more, more preferably 7 nm or more, and still more preferably 10 nm or more. As the average primary particle diameter of the abrasive grains increases, the polishing rate of the high-mobility material portion and silicon material portion, in particular, the polishing rate of the silicon material portion with the polishing composition is enhanced.
  • the value of the average primary particle diameter of the abrasive grains can be calculated, for example, based on the specific surface area of the abrasive grains measured by the BET method.
  • the average primary particle diameter of the abrasive grains is also preferably 150 nm or less, more preferably 110 nm or less, and still more preferably 100 nm or less. As the average primary particle diameter of the abrasive grains decreases, a polished surface with fewer scratches is easily obtained by polishing the object with the polishing composition.
  • the average secondary particle diameter of the abrasive grains is preferably 300 nm or less, more preferably 270 nm or less, and still more preferably 250 nm or less. As the average secondary particle diameter of the abrasive grains decreases, a polished surface with fewer scratches is easily obtained by polishing the object with the polishing composition.
  • the value of the average secondary particle diameter of the abrasive grains can be measured, for example, by a laser light scattering method.
  • the average degree of association of the abrasive grains obtained by dividing the value of the average secondary particle diameter by the value of the average primary particle diameter, is preferably 1.6 or more, and more preferably 1.7 or more.
  • the abrasive grains having a high average degree of association have a peanut shell shape or other odd shape. As the average degree of association of the abrasive grains increases, the polishing rate of the high-mobility material portion and silicon material portion, in particular, the polishing rate of silicon material portion with the polishing composition is enhanced.
  • the average degree of association of the abrasive grains is also preferably 5 or less, more preferably 4.5 or less, and still more preferably 4 or less. As the average degree of association of the abrasive grains decreases, a polished surface with few scratches is easily obtained by polishing the object with the polishing composition.
  • the oxidizing agent contained in the polishing composition has a standard electrode potential of 0.3 V or more.
  • the polishing rate of the high-mobility material portion and silicon material portion, in particular, the polishing rate of the high-mobility material portion with the polishing composition is advantageously enhanced as compared with when an oxidizing agent having a standard electrode potential of less than 0.3 V is used.
  • an oxidizing agent having a standard electrode potential of 0.3 V or more include hydrogen peroxide, sodium peroxide, barium peroxide, an organic oxidizing agent, ozone water, a silver (II) salt, an iron (III) salt, permanganic acid, chromic acid, dichromic acid, peroxodisulfuric acid, peroxophosphoric acid, peroxosulfuric acid, peroxoboric acid, performic acid, peracetic acid, perbenzoic acid, perphthalic acid, hypochlorous acid, hypobromous acid, hypoiodous acid, chloric acid, chlorous acid, perchloric acid, bromic acid, iodic acid, periodic acid, sulfuric acid, persulfuric acid, citric acid, dichloroisocyanuric acid, and salts thereof.
  • hydrogen peroxide, ammonium persulfate, periodic acid, hypochlorous acid, and sodium dichloroisocyanurate are preferable since the polishing rate of the high-mobility material portion and silicon material portion, in particular, the polishing rate of the high-mobility material portion with the polishing composition is greatly enhanced.
  • E0 is a standard electrode potential
  • ⁇ G0 is standard Gibbs energy change of the oxidation reaction
  • K is an equilibrium constant thereof
  • F is a Faraday constant
  • T is an absolute temperature
  • n is the number of electrons participating in the oxidation reaction. Therefore, since the standard electrode potential fluctuates with a temperature, a standard electrode potential at 25° C. is utilized in the present specification.
  • the standard electrode potential of an aqueous solution system is described in, for example, Handbook of Chemistry (fundamental part) II, revised 4th edition, pp. 464-468 (edited by the Chemical Society of Japan).
  • the content of the oxidizing agent in the polishing composition is preferably 0.01 mol/L or more, and more preferably 0.1 mol/L or more. As the oxidizing agent content increases, the polishing rate of the high-mobility material portion with the polishing composition is enhanced.
  • the content of the oxidizing agent in the polishing composition is also preferably 100 mol/L or less, and more preferably 50 mol/L or less. As the oxidizing agent content decreases, the material cost of the polishing composition can be reduced, and additionally, the burden of treating the polishing composition after use in polishing, that is, the burden of waste liquid treatment can be reduced.
  • the value of the pH of the polishing composition needs to be in the range of 1 or more and 6 or less, or 8 or more and 14 or less.
  • the pH is about 7, there is a disadvantage of substantially reducing the polishing rate of the silicon material portion with the polishing composition.
  • a pH adjusting agent is used as required in order to adjust the pH of the polishing composition to the range of 1 or more and 6 or less, or 8 or more and 14 or less, and may be any of an acid and an alkali.
  • the pH adjusting agent may be any of inorganic and organic compounds.
  • Odd-shaped abrasive grains are used in the polishing composition of the present embodiment in order to enhance the polishing rate of the high-mobility material portion and silicon material portion, in particular, the polishing rate of the silicon material portion with the polishing composition.
  • An oxidizing agent having a standard electrode potential of 0.3 V or more is also used in order to enhance the polishing rate of the high-mobility material portion with the polishing composition.
  • the polishing rate of the silicon material portion with the polishing composition is kept at a high level by adjusting the pH of the polishing composition to be in the range of 1 or more and 6 or less, or 8 or more and 14 or less.
  • the polishing composition of the present embodiment is suitably used for the purpose of simultaneously polishing the high-mobility material portion and the silicon material portion.
  • Polishing compositions of Examples 101 to 113 and Comparative Examples 101 to 108 were prepared by mixing colloidal silica and an oxidizing agent, and a salt and a pH adjusting agent as required, with water.
  • Polishing compositions of Comparative Examples 109 and 110 were prepared by mixing an oxidizing agent with water. The details of the components in each of the polishing compositions and the results obtained by measuring the pH of each polishing composition are shown in Table 1.
  • H 2 O 2 represents hydrogen peroxide
  • APS represents ammonium persulfate.
  • Acetic acid or potassium hydroxide was used as the pH adjusting agent.
  • the value of the polishing rate of the TEOS blanket wafer was obtained by dividing by polishing time the difference between the thicknesses of the wafer before and after polishing measured using an optical interferometric film thickness measurement apparatus.
  • the value of the polishing rate of the silicon germanium blanket wafer and the value of the polishing rate of the germanium wafer were obtained by dividing by the density and polishing time the difference between the weights of each of the wafers before and after polishing.
  • the value obtained by dividing the thus obtained polishing rate of silicon germanium with each of the polishing compositions of Examples 101 to 113 and Comparative Examples 101 to 110 by the thus obtained polishing rate of TEOS with the same polishing composition is shown in the column entitled “polishing rate of SiGe/polishing rate of TEOS” of Table 3.
  • the value obtained by dividing the thus obtained polishing rate of germanium with each polishing composition by the thus obtained polishing rate of TEOS with the same polishing composition is shown in the column entitled “polishing rate of Ge/polishing rate of TEOS” of Table 3.
  • the acceptable level of the polishing rate of silicon germanium is 300 ⁇ /min or more, more preferably 500 ⁇ /min or more, and still more preferably 700 ⁇ /min or more.
  • the acceptable level of the polishing rate of germanium is 600 ⁇ /min or more, more preferably 1,000 ⁇ /min or more, and still more preferably 1,400 ⁇ /min or more.
  • the acceptable level of the polishing rate of TEOS is 100 ⁇ /min or more, more preferably 200 ⁇ /min or more, and still more preferably 300 ⁇ /min or more.
  • the acceptable level of the value obtained by dividing the polishing rate of silicon germanium by the polishing rate of TEOS is 30 or less, more preferably 20 or less, and still more preferably 10 or less.
  • the acceptable level of the value obtained by dividing the polishing rate of silicon germanium by the polishing rate of TEOS is 60 or less, more preferably 40 or less, and still more preferably 20 or less.
  • One-side CMP polisher Polishing pad Politex (trade name) manufactured by Rodel Incorporated Polishing pressure: 100 g/cm 2 Rotational speed of platen: 50 rpm Feeding rate of polishing composition: 100 mL/min
  • the polishing rate of silicon germanium was 300 ⁇ /min or more, or the polishing rate of germanium was 600 ⁇ /min or more and the polishing rate of TEOS was 100 ⁇ /min or more.
  • Polishing compositions of Examples 201 to 209 and Comparative Examples 201 to 205 were prepared by mixing colloidal silica and an oxidizing agent, and a salt and a pH adjusting agent as required, with water.
  • a polishing composition of Comparative Example 206 was prepared by mixing an oxidizing agent with water. The details of the components in each of the polishing compositions and the results obtained by measuring the pH of each polishing composition are shown in Table 4.
  • H 2 O 2 represents hydrogen peroxide
  • APS represents ammonium persulfate
  • KOH represents potassium hydroxide
  • the value of the polishing rate of the TEOS blanket wafer was obtained by dividing by polishing time the difference between the thicknesses of the wafer before and after polishing measured using an optical interferometric film thickness measurement apparatus.
  • the value of the polishing rate of the gallium arsenide blanket wafer was obtained by dividing by the density and polishing time the difference between the weights of the wafer before and after polishing.
  • the value obtained by dividing the thus obtained polishing rate of gallium arsenide with each of the polishing compositions of Examples 201 to 209 and Comparative Examples 201 to 206 by the thus obtained polishing rate of TEOS with the same polishing composition is shown in the column entitled “polishing rate of GaAs/polishing rate of TEOS” of Table 6.
  • the acceptable level of the polishing rate of gallium arsenide is 500 ⁇ /min or more, more preferably 600 ⁇ /min or more, and still more preferably 700 ⁇ /min or more.
  • the acceptable level of the polishing rate of TEOS is 100 ⁇ /min or more, more preferably 200 ⁇ /min or more, and still more preferably 300 ⁇ /min or more.
  • the acceptable level of the value obtained by dividing the polishing rate of gallium arsenide by the polishing rate of TEOS is 30 or less, more preferably 20 or less, and still more preferably 10 or less.
  • One-side CMP polisher Polishing pad Politex (trade name) manufactured by Rodel Incorporated Polishing pressure: 100 g/cm 2 Rotational speed of platen: 50 rpm Feeding rate of polishing composition: 100 mL/min
  • the polishing rate of gallium arsenide was 500 ⁇ /min or more, and the polishing rate of TEOS was 100 ⁇ /min or more.

Abstract

A polishing composition of the present invention is to be used for polishing an object including a portion containing a high-mobility material and a portion containing a silicon material. The polishing composition comprises odd-shaped abrasive grains and an oxidizing agent having a standard electrode of 0.3 V or more, and preferably further contains a salt, such as an ammonium salt. The pH of the polishing composition is 1 or more and 6 or less, or 8 or more and 14 or less. The average degree of association of the abrasive grains, obtained by dividing the value of the average secondary particle diameter of the abrasive grains by the value of the average primary particle diameter of the abrasive grains, is preferably 1.6 or more.

Description

TECHNICAL FIELD
The present invention relates to a polishing composition to be used for polishing an object including a portion containing a high-mobility material (hereinafter, also referred to as a high-mobility material portion), such as a group IV material and a group III-V compound, and a portion containing a silicon material (hereinafter, also referred to as a silicon material portion), such as silicon oxide. The present invention also relates to a polishing method and substrate production method using the polishing composition.
BACKGROUND ART
Group III-V compounds, such as gallium arsenide (GaAs), and group IV materials, such as silicon germanium (SiGe) and germanium (Ge), have higher electron and hole mobility than that of silicon and an excellent carrier transport property, and are expected as next-generation semiconductor high-mobility channel materials.
A channel using a high-mobility material can be formed by polishing an object including a high-mobility material portion and a silicon material portion. In this case, when a polishing composition is used that can non-selectively polish and remove the high-mobility material portion and the silicon material portion, the high-mobility material portion and the silicon material portion can be simultaneously polished. The non-selective polishing of the high-mobility material portion and the silicon material portion enables a desired pattern shape to be formed in a suitable manner without producing a level difference between the high-mobility material portion and the silicon material portion. However, both a polishing composition conventionally used for polishing a group IV compound semiconductor substrate and described in, for example, Patent Document 1 or 2, and a polishing composition conventionally used for polishing a group III-V compound semiconductor substrate and described in, for example, Patent Document 3 or 4 are inferior in the capability of efficiently and non-selectively polishing and removing a high-mobility material portion and a silicon material portion. Those conventional polishing compositions are thus unsuitable for the purpose of simultaneously polishing a high-mobility material portion and a silicon material portion.
PRIOR ART DOCUMENTS
Patent Document 1: Japanese Laid-Open Patent Publication No. 2010-130009
Patent Document 2: Japanese National Phase Laid-Open Patent Publication No. 2010-519740
Patent Document 3: Japanese Laid-Open Patent Publication No. 63-150155
Patent Document 4: Japanese Laid-Open Patent Publication No. 2004-327614
SUMMARY OF THE INVENTION Problems that the Invention is to Solve
Accordingly, it is an objective of the present invention to provide a polishing composition suitable for the purpose of simultaneously polishing a high-mobility material portion and a silicon material portion, and a polishing method and substrate production method using the polishing composition.
Means for Solving the Problems
The present inventors have completed the present invention based on a finding that when a high-mobility material portion and a silicon material portion, which have chemical characteristics significantly different from each other, are simultaneously polished, the high-mobility material portion and the silicon portion can be non-selectively and effectively polished and removed if a mechanical action by abrasive grains or the like rather than a chemical action by an additive in a polishing composition is made into the rate determining factor for effects on the object to be polished.
That is, in order to achieve the above-mentioned objective and in accordance with a first aspect of the present invention, provided is a polishing composition to be used for polishing an object including a high-mobility material portion and a silicon material portion. The polishing composition contains odd-shaped abrasive grains and an oxidizing agent having a standard electrode of 0.3 V or more, and has a pH of 1 or more and 6 or less, or 8 or more and 14 or less.
The abrasive grains have an average degree of association, obtained by dividing an average secondary particle diameter value of the abrasive grains by an average primary particle diameter value of the abrasive grains, is preferably 1.6 or more.
The abrasive grains may each have a surface with protrusions, which are referred to as spiky-shaped particles. In that case, part of the particles has larger particle diameters than the volume average particle diameter of the particles, and the average of values respectively obtained by dividing the height of a protrusion on the surface of each particle belonging to the part of the particles by the width of a base portion of the same protrusion is preferably 0.245 or more.
Protrusions on the surfaces of particles which belong to the part of the particles each having the surface with the plurality of protrusions and have larger particle diameters than the volume average particle diameter of the particles have an average height of preferably 2.5 nm or more.
The polishing composition of the first aspect may further contain a salt. The salt is preferably an ammonium salt.
In accordance with a second aspect of the present invention, provided is a method for polishing an object including a high-mobility material portion and a silicon material portion with the polishing composition of the first aspect.
In accordance with a third aspect of the present invention, provided is a method for producing a substrate by polishing an object including a high-mobility material portion and a silicon material portion with the polishing composition of the first aspect.
Effects of the Invention
The present invention succeeds in providing a polishing composition suitable for the purpose of simultaneously polishing a high-mobility material portion and a silicon material portion, and a polishing method and substrate production method using the polishing composition.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a diagram showing a projected contour of an outer shape of a particle that has a surface with protrusions and can be used as an abrasive grain contained in a polishing composition according to an embodiment of the present invention.
 MODES FOR CARRYING OUT THE INVENTION
One embodiment of the present invention will be described below.
A polishing composition of the present embodiment is prepared by mixing specific abrasive grains and a specific oxidizing agent with water. The polishing composition has a pH adjusted to the range of 1 or more and 6 or less, or 8 or more and 14 or less by adding a pH adjusting agent as required. Accordingly, the polishing composition contains specific abrasive grains and a specific oxidizing agent, and further contains a pH adjusting agent as required.
The polishing composition is used for polishing an object including a high-mobility material portion and a silicon material portion, and specifically for the purpose of simultaneously polishing a high-mobility material portion and a silicon material portion in an application for polishing the object to produce a substrate. A high-mobility material as referred to here means a material having higher electron or hole mobility than that of a silicon material. Examples of the high-mobility material include group III-V compounds, such as gallium phosphide (GaP), indium phosphide (InP), gallium arsenide (GaAs), indium arsenide (InAs), and indium antimonide (InSb) and group IV materials, such as silicon germanium (SiGe), germanium (Ge), and silicon carbide (SiC). Examples of the silicon material include polysilicon, silicon oxide, and silicon nitride. For example, the silicon material has an electron mobility of 1,600 cm2/V·s and a hole mobility of 430 cm2/V·s. By contrast, the high-mobility material, that is, indium phosphide has an electron mobility of 5,400 cm2/V·s and a hole mobility of 200 cm2/V·s; gallium arsenide has an electron mobility of 8,500 cm2/V·s and a hole mobility of 400 cm2/V·s; indium arsenide has an electron mobility of 40,000 cm2/V·s and a hole mobility of 500 cm2/V·s; indium antimonide has an electron mobility of 77,000 cm2/V·s and a hole mobility of 850 cm2/V·s; and germanium has an electron mobility of 3,900 cm2/V·s and a hole mobility of 1,900 cm2/V·s. The high-mobility material has at least one of electron mobility and hole mobility values significantly higher than that of the silicon material.
(Abrasive Grains)
The abrasive grains contained in the polishing composition have an odd shape, i.e., a non-spherical shape. When the odd-shaped abrasive grains are used, the polishing rate of the high-mobility material portion and silicon material portion, in particular, the polishing rate of the silicon material portion with the polishing composition is advantageously enhanced as compared with the case where abrasive grains having a non-odd shape, i.e., a spherical shape are used. Typical examples of the odd-shaped abrasive grains include particles each having a constricted central portion, which are referred to as peanut shell-shaped particles, and particles each having a surface with protrusions, which are referred to as spiky-shaped particles.
When the abrasive grains in the polishing composition contain particles each having a surface with protrusions, the average number of protrusions that each particle has on the surface thereof is preferably 3 or more, and more preferably 5 or more.
A protrusion as referred to here has a sufficiently small height and width in comparison to the particle diameter of an abrasive grain. Further, a protrusion is such that the length of a portion shown in FIG. 1 as a curve AB which passes through a point A and a point B does not exceed one-fourth of the circumferential length of the maximum inscribed circle of an abrasive grain particle, or more accurately, the circumferential length of the maximum circle inscribed in a projected contour of the outer shape of the abrasive grain particle. The width of a protrusion refers to a width of a base portion of the protrusion, and is expressed in FIG. 1 as the distance between the point A and the point B. The height of a protrusion refers to a distance between the base portion of the protrusion and a portion of the protrusion furthest from the base portion, and is expressed in FIG. 1 as the length of a segment CD which is orthogonal to a straight line AB.
When the abrasive grains in the polishing composition contain particles each having a surface with protrusions, part of the particles has larger particle diameters than the volume average particle diameter of the particles, and the average of values respectively obtained by dividing the height of a protrusion on the surface of each particle belonging to the part of the particles by the width of a base portion of the same protrusion is preferably 0.245 or more, and more preferably 0.255 or more. As the average of the above values increases, the polishing rate of the high-mobility material portion and silicon material portion, in particular, the polishing rate of the silicon material portion with the polishing composition is enhanced because the shapes of the protrusions are comparatively sharp. The height of each protrusion of an abrasive grain particle and the width of the protrusion at the base portion can be determined by using general image analysis software to analyze an image of the abrasive grain particle taken by a scanning electron microscope.
When the abrasive grains in the polishing composition contain particles each having a surface with protrusions, protrusions on the surfaces of particles which belong to the part of the particles each having the surface with the plurality of protrusions and have larger particle diameters than the volume average particle diameter of the particles have an average height of preferably 2.5 nm or more, more preferably 2.7 nm or more, and still more preferably 3.0 nm or more. As the average height of the protrusions increases, the polishing rate of the high-mobility material portion and silicon material portion, in particular, the polishing rate of the silicon material portion with the polishing composition is enhanced.
The abrasive grains in the polishing composition may be any of inorganic particles and organic particles. Specific examples of inorganic particles include particles made of a metal oxide, such as silica, alumina, ceria, and titania. Specific examples of organic particles include polymethyl methacrylate (PMMA) particles. Among them, silica particles are preferable, and colloidal silica is particularly preferable.
The content of the abrasive grains in the polishing composition is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, and still more preferably 1% by mass or more. As the abrasive grain content increases, the polishing rate of the high-mobility material portion and silicon material portion, in particular, the polishing rate of the silicon material portion with the polishing composition is enhanced.
The content of the abrasive grains in the polishing composition is also preferably 30% by mass or less, more preferably 25% by mass or less, and still more preferably 20% by mass or less. As the abrasive grain content decreases, the material cost of the polishing composition can be reduced, and additionally, the aggregation of the abrasive grains is less likely to occur.
The average primary particle diameter of the abrasive grains is preferably 5 nm or more, more preferably 7 nm or more, and still more preferably 10 nm or more. As the average primary particle diameter of the abrasive grains increases, the polishing rate of the high-mobility material portion and silicon material portion, in particular, the polishing rate of the silicon material portion with the polishing composition is enhanced. The value of the average primary particle diameter of the abrasive grains can be calculated, for example, based on the specific surface area of the abrasive grains measured by the BET method.
The average primary particle diameter of the abrasive grains is also preferably 150 nm or less, more preferably 110 nm or less, and still more preferably 100 nm or less. As the average primary particle diameter of the abrasive grains decreases, a polished surface with fewer scratches is easily obtained by polishing the object with the polishing composition.
The average secondary particle diameter of the abrasive grains is preferably 300 nm or less, more preferably 270 nm or less, and still more preferably 250 nm or less. As the average secondary particle diameter of the abrasive grains decreases, a polished surface with fewer scratches is easily obtained by polishing the object with the polishing composition. The value of the average secondary particle diameter of the abrasive grains can be measured, for example, by a laser light scattering method.
The average degree of association of the abrasive grains, obtained by dividing the value of the average secondary particle diameter by the value of the average primary particle diameter, is preferably 1.6 or more, and more preferably 1.7 or more. The abrasive grains having a high average degree of association have a peanut shell shape or other odd shape. As the average degree of association of the abrasive grains increases, the polishing rate of the high-mobility material portion and silicon material portion, in particular, the polishing rate of silicon material portion with the polishing composition is enhanced.
The average degree of association of the abrasive grains is also preferably 5 or less, more preferably 4.5 or less, and still more preferably 4 or less. As the average degree of association of the abrasive grains decreases, a polished surface with few scratches is easily obtained by polishing the object with the polishing composition.
(Oxidizing Agent)
The oxidizing agent contained in the polishing composition has a standard electrode potential of 0.3 V or more. When an oxidizing agent having a standard electrode potential of 0.3 V or more is used, the polishing rate of the high-mobility material portion and silicon material portion, in particular, the polishing rate of the high-mobility material portion with the polishing composition is advantageously enhanced as compared with when an oxidizing agent having a standard electrode potential of less than 0.3 V is used. Specific examples of an oxidizing agent having a standard electrode potential of 0.3 V or more include hydrogen peroxide, sodium peroxide, barium peroxide, an organic oxidizing agent, ozone water, a silver (II) salt, an iron (III) salt, permanganic acid, chromic acid, dichromic acid, peroxodisulfuric acid, peroxophosphoric acid, peroxosulfuric acid, peroxoboric acid, performic acid, peracetic acid, perbenzoic acid, perphthalic acid, hypochlorous acid, hypobromous acid, hypoiodous acid, chloric acid, chlorous acid, perchloric acid, bromic acid, iodic acid, periodic acid, sulfuric acid, persulfuric acid, citric acid, dichloroisocyanuric acid, and salts thereof. Among them, hydrogen peroxide, ammonium persulfate, periodic acid, hypochlorous acid, and sodium dichloroisocyanurate are preferable since the polishing rate of the high-mobility material portion and silicon material portion, in particular, the polishing rate of the high-mobility material portion with the polishing composition is greatly enhanced.
The standard electrode potential is represented by the following formula when all chemical species participating in an oxidation reaction are in a normal state:
E0=−ΔG0/nF=(RT/nF)ln K
where E0 is a standard electrode potential; ΔG0 is standard Gibbs energy change of the oxidation reaction, K is an equilibrium constant thereof, F is a Faraday constant, T is an absolute temperature, and n is the number of electrons participating in the oxidation reaction. Therefore, since the standard electrode potential fluctuates with a temperature, a standard electrode potential at 25° C. is utilized in the present specification. The standard electrode potential of an aqueous solution system is described in, for example, Handbook of Chemistry (fundamental part) II, revised 4th edition, pp. 464-468 (edited by the Chemical Society of Japan).
The content of the oxidizing agent in the polishing composition is preferably 0.01 mol/L or more, and more preferably 0.1 mol/L or more. As the oxidizing agent content increases, the polishing rate of the high-mobility material portion with the polishing composition is enhanced.
The content of the oxidizing agent in the polishing composition is also preferably 100 mol/L or less, and more preferably 50 mol/L or less. As the oxidizing agent content decreases, the material cost of the polishing composition can be reduced, and additionally, the burden of treating the polishing composition after use in polishing, that is, the burden of waste liquid treatment can be reduced.
(pH Adjusting Agent)
The value of the pH of the polishing composition needs to be in the range of 1 or more and 6 or less, or 8 or more and 14 or less. When the pH is about 7, there is a disadvantage of substantially reducing the polishing rate of the silicon material portion with the polishing composition.
A pH adjusting agent is used as required in order to adjust the pH of the polishing composition to the range of 1 or more and 6 or less, or 8 or more and 14 or less, and may be any of an acid and an alkali. The pH adjusting agent may be any of inorganic and organic compounds.
According to the present embodiment, the following advantages are obtained.
Odd-shaped abrasive grains are used in the polishing composition of the present embodiment in order to enhance the polishing rate of the high-mobility material portion and silicon material portion, in particular, the polishing rate of the silicon material portion with the polishing composition. An oxidizing agent having a standard electrode potential of 0.3 V or more is also used in order to enhance the polishing rate of the high-mobility material portion with the polishing composition. Further, the polishing rate of the silicon material portion with the polishing composition is kept at a high level by adjusting the pH of the polishing composition to be in the range of 1 or more and 6 or less, or 8 or more and 14 or less. Using the polishing composition thus enables both the high-mobility material portion and the silicon material portion to be polished at a high polishing rate. Accordingly, the polishing composition of the present embodiment is suitably used for the purpose of simultaneously polishing the high-mobility material portion and the silicon material portion.
The embodiment described above may be modified as follows.
    • The polishing composition of the embodiment described above may contain two or more types of abrasive grains. In such cases, part of the abrasive grains does not need to necessarily have an odd shape.
    • The polishing composition of the embodiment described above may contain two or more types of oxidizing agent. In such cases, part of the oxidizing agents does not need to necessarily have a standard electrode potential of 0.3 V or more.
    • The polishing composition of the embodiment described above may further contain a salt. The salt serves to make the electric double layer on the surface of each of the abrasive grains smaller. As a result, electric repulsion between the abrasive grains and the silicon material portion is decreased. Therefore, the polishing composition containing the salt enables the polishing rate of the silicon material portion with the polishing composition to be increased. Although the type of the salt to be used is not particularly limited, the salt is preferably an ammonium salt, such as ammonium sulfate. Using the ammonium salt prevents the polishing composition from being contaminated with metal impurities.
    • The polishing composition of the embodiment described above may further contain a known additive such as a preservative agent as required.
    • The polishing composition of the embodiment described above may be of a one-pack type or may be of a multi-pack type, such as a two-pack type.
    • The polishing composition of the embodiment described above may be prepared by diluting an undiluted solution of the polishing composition with water.
Next, examples of the present invention and comparative examples will be described.
Examples 101 to 113 and Comparative Examples 101 to 110
Polishing compositions of Examples 101 to 113 and Comparative Examples 101 to 108 were prepared by mixing colloidal silica and an oxidizing agent, and a salt and a pH adjusting agent as required, with water. Polishing compositions of Comparative Examples 109 and 110 were prepared by mixing an oxidizing agent with water. The details of the components in each of the polishing compositions and the results obtained by measuring the pH of each polishing composition are shown in Table 1.
TABLE 1
Colloidal silica
Average Average Average of Oxidizing agent
Primary Secondary width height heights of Standard
particle particle Average Presence or of of protrusions/ electrode
diameter diameter degree of absence of protrusions protrusions widths of Content potential Content Salt
[nm] [nm] association protrusion [nm] [nm] protrusions [% by mass] Type [V] [mol/L] Type Content [mol/L] pH
Example 101 33.3 64.3 1.93 Absence 0 0 0 1 H2O2 1.7 0.2 — — 4
Example 102 33.3 64.3 1.93 Absence 0 0 0 1 H2O2 1.7 0.2 — — 11
Example 103 33.3 64.3 1.93 Absence 0 0 0 1 H2O2 1.7 0.2 Ammonium 0.05 4
sulfate
Example 104 33.3 64.3 1.93 Absence 0 0 0 1 APS 2 0.2 — — 4
Example 105 33.3 64.3 1.93 Absence 0 0 0 1 APS 2 0.2 — — 11
Example 106 33.3 64.3 1.93 Absence 0 0 0 1 Sodium 1.6 0.2 — — 11
dichloroisocyanurate
Example 107 33.3 64.3 1.93 Absence 0 0 0 1 Periodic acid 1.6 0.2 — — 3
Example 108 33.3 64.3 1.93 Absence 0 0 0 1 Periodic acid 1.6 0.2 — — 10
Example 109 33.3 64.3 1.93 Absence 0 0 0 1 Hypochlorous acid 0.8 0.2 — — 3
Example 110 33.3 64.3 1.93 Absence 0 0 0 1 Hypochlorous acid 0.8 0.2 — — 10
Example 111 30.6 58.2 1.90 Presence 16.6 5.6 0.34 1 H2O2 1.7 0.2 — — 11
Example 112 30.6 58.2 1.90 Presence 16.6 5.6 0.34 6 H2O2 1.7 0.2 — — 11
Example 113 30.6 58.2 1.90 Presence 16.6 5.6 0.34 12 H2O2 1.7 0.2 — — 11
Comparative 33.3 64.3 1.93 Absence 0 0 0 1 H2O2 1.7 0.2 — — 7
Example 101
Comparative 33.3 64.3 1.93 Absence 0 0 0 1 APS 2 0.2 — — 7
Example 102
Comparative 33.3 64.3 1.93 Absence 0 0 0 1 Sodium 1.6 0.2 — — 7
Example 103 dichloroisocyanurate
Comparative 33.3 64.3 1.93 Absence 0 0 0 1 Periodic acid 1.6 0.2 — — 7
Example 104
Comparative 33.3 64.3 1.93 Absence 0 0 0 1 Hypochlorous acid 0.8 0.2 — — 7
Example 105
Comparative 33.3 64.3 1.93 Absence 0 0 0 1 Copper nitrate 0.2 0.2 — — 4
Example 106
Comparative 25 39.3 1.57 Absence 0 0 0 1 H2O2 1.7 0.2 — — 11
Example 107
Comparative 30.6 58.2 1.90 Presence 16.6 5.6 0.34 12 — — — — — 11
Example 108
Comparative — — — — — — — — H2O2 1.7 0.2 — — 11
Example 109
Comparative — — — — — — — — Sodium 1.6 0.2 — — 8
Example 110 dichloroisocyanurate
In Table 1, “H2O2” represents hydrogen peroxide, and “APS” represents ammonium persulfate. Acetic acid or potassium hydroxide was used as the pH adjusting agent.
The values of polishing rates obtained when the surfaces of a silicon germanium blanket wafer, germanium blanket wafer, and tetraethyl orthosilicate (TEOS) blanket wafer are polished under the conditions shown in Table 2 with each of the polishing compositions of Examples 101 to 113 and Comparative Examples 101 to 110 are shown in the columns entitled “polishing rate of SiGe”, “polishing rate of Ge”, and “polishing rate of TEOS”, respectively, of Table 3. The value of the polishing rate of the TEOS blanket wafer was obtained by dividing by polishing time the difference between the thicknesses of the wafer before and after polishing measured using an optical interferometric film thickness measurement apparatus. The value of the polishing rate of the silicon germanium blanket wafer and the value of the polishing rate of the germanium wafer were obtained by dividing by the density and polishing time the difference between the weights of each of the wafers before and after polishing. The value obtained by dividing the thus obtained polishing rate of silicon germanium with each of the polishing compositions of Examples 101 to 113 and Comparative Examples 101 to 110 by the thus obtained polishing rate of TEOS with the same polishing composition is shown in the column entitled “polishing rate of SiGe/polishing rate of TEOS” of Table 3. The value obtained by dividing the thus obtained polishing rate of germanium with each polishing composition by the thus obtained polishing rate of TEOS with the same polishing composition is shown in the column entitled “polishing rate of Ge/polishing rate of TEOS” of Table 3.
The acceptable level of the polishing rate of silicon germanium is 300 Å/min or more, more preferably 500 Å/min or more, and still more preferably 700 Å/min or more. The acceptable level of the polishing rate of germanium is 600 Å/min or more, more preferably 1,000 Å/min or more, and still more preferably 1,400 Å/min or more. The acceptable level of the polishing rate of TEOS is 100 Å/min or more, more preferably 200 Å/min or more, and still more preferably 300 Å/min or more. The acceptable level of the value obtained by dividing the polishing rate of silicon germanium by the polishing rate of TEOS is 30 or less, more preferably 20 or less, and still more preferably 10 or less. The acceptable level of the value obtained by dividing the polishing rate of silicon germanium by the polishing rate of TEOS is 60 or less, more preferably 40 or less, and still more preferably 20 or less.
TABLE 2
Apparatus: One-side CMP polisher
Polishing pad: Politex (trade name) manufactured by Rodel Incorporated
Polishing pressure: 100 g/cm2
Rotational speed of platen: 50 rpm
Feeding rate of polishing composition: 100 mL/min
TABLE 3
Polishing rate Polishing rate Polishing rate Polishing rate of SiGe/ Polishing rate of Ge/
of SiGe [Å/min] of Ge [Å/min] of TEOS [Å/min] polishing rate of TEOS polishing rate of TEOS
Example 101 800 1440 216 3.7 6.7
Example 102 450 810 258 1.7 3.1
Example 103 810 1458 278 2.9 5.2
Example 104 500 900 210 2.4 4.3
Example 105 800 1440 417 1.9 3.5
Example 106 600 1080 405 1.5 2.7
Example 107 700 1260 318 2.2 4.0
Example 108 450 810 322 1.4 2.5
Example 109 1600 2880 312 5.1 9.2
Example 110 800 1440 314 2.5 4.6
Example 111 450 810 739 0.6 1.1
Example 112 450 810 910 0.5 0.9
Example 113 450 810 1117 0.4 0.7
Comparative 700 1260 85 8.2 14.8
Example 101
Comparative 800 1440 77 10.4 18.7
Example 102
Comparative 550 990 92 6.0 10.8
Example 103
Comparative 500 890 87 5.7 10.3
Example 104
Comparative 1100 1980 78 14.1 25.4
Example 105
Comparative 500 890 56 8.9 16.1
Example 106
Comparative 680 1224 91 7.5 13.5
Example 107
Comparative 56 87 240 0.2 0.4
Example 108
Comparative 400 720 15 26.7 48.0
Example 109
Comparative 400 720 11 36.4 65.5
Example 110
As shown in Table 3, in the case of the polishing compositions of Examples 101 to 113, the polishing rate of silicon germanium was 300 Å/min or more, or the polishing rate of germanium was 600 Å/min or more and the polishing rate of TEOS was 100 Å/min or more. These obtained results are at a level which can be satisfactorily used for the purpose of simultaneously polishing the high-mobility material portion and the silicon material portion.
On the other hand, in the case of the polishing compositions of Comparative Examples 101 to 110, the polishing rate of silicon germanium or germanium, or the polishing rate of TEOS was below the acceptable level. These obtained results are not at a level which can be satisfactorily used for the purpose of simultaneously polishing the high-mobility material portion and the silicon material portion.
Examples 201 to 209 and Comparative Examples 201 to 206
Polishing compositions of Examples 201 to 209 and Comparative Examples 201 to 205 were prepared by mixing colloidal silica and an oxidizing agent, and a salt and a pH adjusting agent as required, with water. A polishing composition of Comparative Example 206 was prepared by mixing an oxidizing agent with water. The details of the components in each of the polishing compositions and the results obtained by measuring the pH of each polishing composition are shown in Table 4.
TABLE 4
Colloidal silica
Average of
Primary Secondary Average Average heights of
particle particle Average Presence or width of height of protrusions/
diameter diameter degree of absence of protrusions protrusions widths of
[nm] [nm] association protrusion [nm] [nm] protrusions
Example 201 33.3 64.3 1.93 Absence 0 0 0
Example 202 33.3 64.3 1.93 Absence 0 0 0
Example 203 33.3 64.3 1.93 Absence 0 0 0
Example 204 33.3 64.3 1.93 Absence 0 0 0
Example 205 33.3 64.3 1.93 Absence 0 0 0
Example 206 33.3 64.3 1.93 Absence 0 0 0
Example 207 30.6 58.2 1.90 Presence 16.6 5.6 0.34
Example 208 30.6 58.2 1.90 Presence 16.6 5.6 0.34
Example 209 30.6 58.2 1.90 Presence 16.6 5.6 0.34
Comparative 33.3 64.3 1.93 Absence 0 0 0
Example 201
Comparative 33.3 64.3 1.93 Absence 0 0 0
Example 202
Comparative 33.3 64.3 1.93 Absence 0 0 0
Example 203
Comparative 33.3 64.3 1.93 Absence 0 0 0
Example 204
Comparative 25 39.3 1.57 Absence 0 0 0
Example 205
Comparative — — — — — — —
Example 206
Oxidizing agent
Colloidal Standard
silica electrode Salt Type of pH
Content potential Content Content adjusting
[% by mass] Type [V] [mol/L] Type [mol/L] agent pH
Example 201 1 H2O2 1.7 0.2 — — Acetic 4
acid
Example 202 1 H2O2 1.7 0.2 — — KOH 11
Example 203 1 H2O2 1.7 0.2 Ammonium 0.05 Acetic 4
sulfate acid
Example 204 1 APS 2 0.2 — — Acetic 4
acid
Example 205 1 APS 2 0.2 — — KOH 11
Example 206 1 Sodium 1.6 0.2 — — KOH 11
dichloro-
isocyanurate
Example 207 1 H2O2 1.7 0.2 — — KOH 11
Example 208 6 H2O2 1.7 0.2 — — KOH 11
Example 209 12 H2O2 1.7 0.2 — — KOH 11
Comparative 1 H2O2 1.7 0.2 — — — 7
Example 201
Comparative 1 APS 2 0.2 — — — 7
Example 202
Comparative 1 Sodium 1.6 0.2 — — — 7
Example 203 dichloro-
isocyanurate
Comparative 1 Copper nitrate 0.2 0.2 — — Acetic 4
Example 204 acid
Comparative 1 H2O2 1.7 0.2 — — KOH 11
Example 205
Comparative — Sodium 1.6 0.2 — — — 8
Example 206 dichloro-
isocyanurate
In Table 4, “H2O2” represents hydrogen peroxide, “APS” represents ammonium persulfate, and “KOH” represents potassium hydroxide.
The values of polishing rates obtained when the surfaces of a gallium arsenide blanket wafer and tetraethyl orthosilicate (TEOS) blanket wafer are polished under the conditions shown in Table 5 with each of the polishing compositions of Examples 201 to 209 and Comparative Examples 201 to 206 are shown in the columns entitled “polishing rate of GaAs” and “polishing rate of TEOS”, respectively, of Table 6. The value of the polishing rate of the TEOS blanket wafer was obtained by dividing by polishing time the difference between the thicknesses of the wafer before and after polishing measured using an optical interferometric film thickness measurement apparatus. The value of the polishing rate of the gallium arsenide blanket wafer was obtained by dividing by the density and polishing time the difference between the weights of the wafer before and after polishing. The value obtained by dividing the thus obtained polishing rate of gallium arsenide with each of the polishing compositions of Examples 201 to 209 and Comparative Examples 201 to 206 by the thus obtained polishing rate of TEOS with the same polishing composition is shown in the column entitled “polishing rate of GaAs/polishing rate of TEOS” of Table 6.
The acceptable level of the polishing rate of gallium arsenide is 500 Å/min or more, more preferably 600 Å/min or more, and still more preferably 700 Å/min or more. The acceptable level of the polishing rate of TEOS is 100 Å/min or more, more preferably 200 Å/min or more, and still more preferably 300 Å/min or more. The acceptable level of the value obtained by dividing the polishing rate of gallium arsenide by the polishing rate of TEOS is 30 or less, more preferably 20 or less, and still more preferably 10 or less.
TABLE 5
Apparatus: One-side CMP polisher
Polishing pad: Politex (trade name) manufactured by Rodel Incorporated
Polishing pressure: 100 g/cm2
Rotational speed of platen: 50 rpm
Feeding rate of polishing composition: 100 mL/min
TABLE 6
Polishing rate
Polishing rate Polishing rate of GaAs/
of GaAs of TEOS polishing rate
[Å/min] [Å/min] of TEOS
Example 201 954 196 5
Example 202 4134 258 16
Example 203 1011 278 4
Example 204 2126 189 11
Example 205 978 417 2
Example 206 12786 405 32
Example 207 4352 739 6
Example 208 4541 910 5
Example 209 4641 1117 4
Comparative 697 85 8
Example 201
Comparative 1563 77 20
Example 202
Comparative 11818 92 128
Example 203
Comparative 200 206 1
Example 204
Comparative 3911 91 43
Example 205
Comparative 2955 11 269
Example 206
As shown in Table 6, in the case of the polishing compositions of Examples 201 to 209, the polishing rate of gallium arsenide was 500 Å/min or more, and the polishing rate of TEOS was 100 Å/min or more. These obtained results are at a level which can be satisfactorily used for the purpose of simultaneously polishing the high-mobility material portion and the silicon material portion.
On the other hand, in the case of the polishing compositions of Comparative Examples 201 to 206, the polishing rate of gallium arsenide or the polishing rate of TEOS was below the acceptable level. These obtained results are not at a level which can be satisfactorily used for the purpose of simultaneously polishing the high-mobility material portion and the silicon material portion.

Claims (17)

The invention claimed is:
1. A polishing composition comprising non-spherical shaped abrasive grains, an oxidizing agent having a standard electrode potential of 0.3 V or more, and a salt, the abrasive grains having an average secondary particle diameter of 300 nm or less, wherein the polishing composition has a pH of 1 or more and 6 or less, or 8 or more and 14 or less, and wherein the abrasive grains contain particles each having a surface with a plurality of protrusions, wherein each protrusion forms a convex portion extending out from a maximum inscribed circle in the abrasive grain particle, wherein length of the protrusion does not exceed one-fourth of the circumferential length of the maximum inscribed circle, the curve extending from a base portion of a protrusion to the opposite base portion of the protrusion and passing through a point on the protrusion furthest from the base portion, and
the base portion having a width, which is a longest straight line distance between two points on the base portion of the protrusion, and the protrusion having a height, which is a distance between the base portion and a surface of the protrusion furthest from the base portion that is orthogonal to the base portion, the particles have a volume average particle diameter and include large particles that each have a particle diameter larger than the volume average particle diameter, an average of values respectively obtained by dividing the height of a protrusion on the surface of each of the large particles by the width of the base portion of the same protrusion is 0.245 or more.
2. The polishing composition according to claim 1, wherein the abrasive grains have an average degree of association, obtained by dividing an average secondary particle diameter value of the abrasive grains by an average primary particle diameter value of the abrasive grains, is 1.6 or more.
3. The polishing composition according to claim 1, wherein protrusions on surfaces of particles which belong to the part of the particles each having the surface with the plurality of protrusions and have larger particle diameters than the volume average particle diameter of the particles have an average height of 2.5 nm or more.
4. The polishing composition according to claim 1, wherein the salt is an ammonium salt.
5. The polishing composition according to claim 1, wherein the average secondary particle diameter of the abrasive grains is 250 nm or less.
6. The polishing composition according to claim 1, wherein the pH of the polishing composition is 1 or more and 6 or less.
7. The polishing composition according to claim 1, wherein the oxidizing agent is hydrogen peroxide, ammonium persulfate, periodic acid, or hypochlorous acid.
8. The polishing composition according to claim 1, wherein the pH of the polishing composition is 8 or more and 14 or less.
9. The polishing composition according to claim 1, wherein the oxidizing agent is ammonium persulfate, sodium dichloroisocyanurate, hypochlorous acid, or periodic acid.
10. A method for polishing, comprising:
providing an object including a portion containing a group IV material or a group III-V compound and a portion containing a silicon material; and
using the polishing composition according to claim 1 to polish the object.
11. The method according to claim 10, wherein the abrasive grains have an average degree of association, obtained by dividing an average secondary particle diameter value of the abrasive grains by an average primary particle diameter value of the abrasive grains, is 1.6 or more.
12. The method according to claim 10, wherein protrusions on surfaces of particles which belong to the part of the particles each having the surface with the plurality of protrusions and have larger particle diameters than the volume average particle diameter of the particles have an average height of 2.5 nm or more.
13. The method according to claim 10, wherein the salt is an ammonium salt.
14. A method for producing a substrate, comprising:
providing an object including a portion containing group IV material or a group III-V compound and a portion containing a silicon material; and
using the polishing composition according to claim 1 to produce a substrate by polishing the object.
15. The method according to claim 14, wherein the abrasive grains have an average degree of association, obtained by dividing an average secondary particle diameter value of the abrasive grains by an average primary particle diameter value of the abrasive grains, is 1.6 or more.
16. The method according to claim 14, wherein protrusions on surfaces of particles which belong to the part of the particles each having the surface with the plurality of protrusions and have larger particle diameters than the volume average particle diameter of the particles have an average height of 2.5 nm or more.
17. The method according to claim 14, wherein the salt is an ammonium salt.
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Citations (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63150155A (en) 1986-12-12 1988-06-22 Nissan Chem Ind Ltd Polishing agent for iii-v compound semiconductor
JP2000160140A (en) 1998-12-01 2000-06-13 Fujimi Inc Grinding composition
US6398827B1 (en) * 1999-07-02 2002-06-04 Nissan Chemical Industries, Ltd. Polishing composition
JP2003109918A (en) 2001-09-28 2003-04-11 Internatl Business Mach Corp <Ibm> Device and method for smoothing wafer for bonding by chemical mechanical polishing (cmp)
JP2003133267A (en) 2001-10-30 2003-05-09 Catalysts & Chem Ind Co Ltd Polishing particle and polishing material
US20030124850A1 (en) 2001-12-27 2003-07-03 Kabushiki Kaisha Toshiba Polishing slurry for use in CMPof SiC series compound, polishing method, and method of manufacturing semiconductor device
US6740590B1 (en) * 1999-03-18 2004-05-25 Kabushiki Kaisha Toshiba Aqueous dispersion, aqueous dispersion for chemical mechanical polishing used for manufacture of semiconductor devices, method for manufacture of semiconductor devices, and method for formation of embedded writing
JP2004207417A (en) 2002-12-25 2004-07-22 Sumitomo Electric Ind Ltd POLISHING SOLUTION AND POLISHING METHOD OF InP WAFER
JP2004327614A (en) 2003-04-23 2004-11-18 Sumitomo Metal Mining Co Ltd Polishing solution for iii-v compound semiconductor wafer and method for polishing iii-v compound semiconductor wafer using the same
US20050205836A1 (en) * 2004-03-19 2005-09-22 Hitachi Cable, Ltd. Grinding abrasive grains, abrasive, abrasive solution, abrasive solution preparation method, grinding method, and semiconductor device fabrication method
US20060175295A1 (en) * 2003-07-11 2006-08-10 Jia-Ni Chu Abrasive partilcle for chemical mechanical polishing
JP2007005562A (en) 2005-06-23 2007-01-11 Yamaguchi Seiken Kogyo Kk Wafer polishing solution composition and wafer polishing method
WO2007029465A1 (en) 2005-09-09 2007-03-15 Asahi Glass Company, Limited Polishing agent, method for polishing surface to be polished, and method for manufacturing semiconductor integrated circuit device
US20070075041A1 (en) 2005-09-30 2007-04-05 Sumitomo Electric Industries, Ltd. Polishing slurry, method of treating surface of GaxIn1-xASyP1-y crystal and GaxIn1-xASyP1-y crystal substrate
US20070074457A1 (en) 2005-09-30 2007-04-05 Takashi Ito Polishing composition and polishing method
JP4053755B2 (en) 2001-09-28 2008-02-27 株式会社東芝 CMP slurry and method for manufacturing semiconductor device
WO2008099245A1 (en) 2007-02-15 2008-08-21 S.O.I.Tec Silicon On Insulator Technologies Method for polishing heterostructures
US20090001339A1 (en) 2007-06-29 2009-01-01 Tae Young Lee Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same
JP2010092968A (en) 2008-10-06 2010-04-22 Hitachi Chem Co Ltd Polishing solution for metal and polishing method of film using the same
WO2010052945A1 (en) * 2008-11-07 2010-05-14 日揮触媒化成株式会社 Aspherical silica sol, process for producing the same, and composition for polishing
US20100130012A1 (en) 2008-11-26 2010-05-27 Siltronic Ag Method For Polishing A Semiconductor Wafer With A Strained-Relaxed Si1-xGex Layer
US20100164106A1 (en) * 2008-12-31 2010-07-01 Cheil Industries Inc. CMP Slurry Composition for Barrier Polishing for Manufacturing Copper Interconnects, Polishing Method Using the Composition, and Semiconductor Device Manufactured by the Method
US20110081780A1 (en) * 2008-02-18 2011-04-07 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method
US20110209413A1 (en) * 2007-11-30 2011-09-01 Jgc Catalysts And Chemicals Ltd. Non-Spherical Silica Sol, Process for Producing the Same, and Composition for Polishing
JP2011238763A (en) 2010-05-10 2011-11-24 Sumitomo Electric Ind Ltd Polishing agent, method for producing compound semiconductor, and method for producing semiconductor device
US9028574B2 (en) * 2010-10-12 2015-05-12 Fujimi Incorporated Polishing composition

Patent Citations (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63150155A (en) 1986-12-12 1988-06-22 Nissan Chem Ind Ltd Polishing agent for iii-v compound semiconductor
JP2000160140A (en) 1998-12-01 2000-06-13 Fujimi Inc Grinding composition
US6740590B1 (en) * 1999-03-18 2004-05-25 Kabushiki Kaisha Toshiba Aqueous dispersion, aqueous dispersion for chemical mechanical polishing used for manufacture of semiconductor devices, method for manufacture of semiconductor devices, and method for formation of embedded writing
US6398827B1 (en) * 1999-07-02 2002-06-04 Nissan Chemical Industries, Ltd. Polishing composition
JP2003109918A (en) 2001-09-28 2003-04-11 Internatl Business Mach Corp <Ibm> Device and method for smoothing wafer for bonding by chemical mechanical polishing (cmp)
JP4053755B2 (en) 2001-09-28 2008-02-27 株式会社東芝 CMP slurry and method for manufacturing semiconductor device
JP2003133267A (en) 2001-10-30 2003-05-09 Catalysts & Chem Ind Co Ltd Polishing particle and polishing material
US6995090B2 (en) 2001-12-27 2006-02-07 Kabushiki Kaisha Toshiba Polishing slurry for use in CMP of SiC series compound, polishing method, and method of manufacturing semiconductor device
US20030124850A1 (en) 2001-12-27 2003-07-03 Kabushiki Kaisha Toshiba Polishing slurry for use in CMPof SiC series compound, polishing method, and method of manufacturing semiconductor device
JP2003197574A (en) 2001-12-27 2003-07-11 Toshiba Corp POLISHING SLURRY FOR CMP OF SiC-BASED COMPOUND, METHOD OF POLISHING, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
JP2004207417A (en) 2002-12-25 2004-07-22 Sumitomo Electric Ind Ltd POLISHING SOLUTION AND POLISHING METHOD OF InP WAFER
JP2004327614A (en) 2003-04-23 2004-11-18 Sumitomo Metal Mining Co Ltd Polishing solution for iii-v compound semiconductor wafer and method for polishing iii-v compound semiconductor wafer using the same
US20060175295A1 (en) * 2003-07-11 2006-08-10 Jia-Ni Chu Abrasive partilcle for chemical mechanical polishing
US20050205836A1 (en) * 2004-03-19 2005-09-22 Hitachi Cable, Ltd. Grinding abrasive grains, abrasive, abrasive solution, abrasive solution preparation method, grinding method, and semiconductor device fabrication method
JP2007005562A (en) 2005-06-23 2007-01-11 Yamaguchi Seiken Kogyo Kk Wafer polishing solution composition and wafer polishing method
WO2007029465A1 (en) 2005-09-09 2007-03-15 Asahi Glass Company, Limited Polishing agent, method for polishing surface to be polished, and method for manufacturing semiconductor integrated circuit device
US20080200033A1 (en) 2005-09-09 2008-08-21 Asahi Glass Company Limited Polishing compound, method for polishing surface to be polished, and process for producing semiconductor integrated circuit device
JP2007103514A (en) 2005-09-30 2007-04-19 Fujimi Inc Polishing composition and method therefor
US20070074457A1 (en) 2005-09-30 2007-04-05 Takashi Ito Polishing composition and polishing method
US20070075041A1 (en) 2005-09-30 2007-04-05 Sumitomo Electric Industries, Ltd. Polishing slurry, method of treating surface of GaxIn1-xASyP1-y crystal and GaxIn1-xASyP1-y crystal substrate
JP2007103463A (en) 2005-09-30 2007-04-19 Sumitomo Electric Ind Ltd POLISHING SLURRY, SURFACE TREATMENT METHOD OF GaxIn1-xAsyP1-y CRYSTAL, AND GaxIn1-xAsyP1-y CRYSTAL SUBSTRATE
US7507668B2 (en) 2005-09-30 2009-03-24 Sumitomo Electric Industries, Ltd. Polishing slurry, method of treating surface of GaxIn1-xAsyP1-y crystal and GaxIn1-xAsyP1-y crystal substrate
US20090159845A1 (en) 2005-09-30 2009-06-25 Sumitomo Electric Industries, Ltd. Polishing slurry, method of treating surface of gaxin1-xasyp1-y crystal and gaxin1-xasyp1-y crystal substrate
JP2010519740A (en) 2007-02-15 2010-06-03 エス．オー．アイ．テック シリコン オン インシュレータ テクノロジーズ Method for polishing heterostructures
WO2008099245A1 (en) 2007-02-15 2008-08-21 S.O.I.Tec Silicon On Insulator Technologies Method for polishing heterostructures
US20110117740A1 (en) 2007-02-15 2011-05-19 S.O.I. Tec Silicon On Insulator Technologies Method for polishing heterostructures
JP2009016821A (en) 2007-06-29 2009-01-22 Cheil Industries Inc Chemical mechanical polishing slurry composition for phase-change memory device polishing and method of polishing phase-change memory device using the same
US20090001339A1 (en) 2007-06-29 2009-01-01 Tae Young Lee Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same
US20110209413A1 (en) * 2007-11-30 2011-09-01 Jgc Catalysts And Chemicals Ltd. Non-Spherical Silica Sol, Process for Producing the Same, and Composition for Polishing
US20110081780A1 (en) * 2008-02-18 2011-04-07 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method
JP2010092968A (en) 2008-10-06 2010-04-22 Hitachi Chem Co Ltd Polishing solution for metal and polishing method of film using the same
WO2010052945A1 (en) * 2008-11-07 2010-05-14 日揮触媒化成株式会社 Aspherical silica sol, process for producing the same, and composition for polishing
US20100130012A1 (en) 2008-11-26 2010-05-27 Siltronic Ag Method For Polishing A Semiconductor Wafer With A Strained-Relaxed Si1-xGex Layer
JP2010130009A (en) 2008-11-26 2010-06-10 Siltronic Ag METHOD OF POLISHING SEMICONDUCTOR WAFER HAVING STRAIN-RELAXED LAYER OF Si1-xGex
US8338302B2 (en) 2008-11-26 2012-12-25 Siltronic Ag Method for polishing a semiconductor wafer with a strained-relaxed Si1−xGex layer
US20100164106A1 (en) * 2008-12-31 2010-07-01 Cheil Industries Inc. CMP Slurry Composition for Barrier Polishing for Manufacturing Copper Interconnects, Polishing Method Using the Composition, and Semiconductor Device Manufactured by the Method
JP2011238763A (en) 2010-05-10 2011-11-24 Sumitomo Electric Ind Ltd Polishing agent, method for producing compound semiconductor, and method for producing semiconductor device
US20120164833A1 (en) 2010-05-10 2012-06-28 Sumitomo Electric Industries, Ltd. Polishing Agent, Compound Semiconductor Manufacturing Method, and Semiconductor Device Manufacturing Method
US9028574B2 (en) * 2010-10-12 2015-05-12 Fujimi Incorporated Polishing composition

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Standard Reduction Potential, via http://www.colby.edu/chemistry/CH142/CH142B/StandardReductionPotentials.pdf ; 1 page; No date available. *

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