TW200717632A - Substrate processing apparatus and substrate processing method, and computer-readable storage medium - Google Patents
Substrate processing apparatus and substrate processing method, and computer-readable storage mediumInfo
- Publication number
- TW200717632A TW200717632A TW095122476A TW95122476A TW200717632A TW 200717632 A TW200717632 A TW 200717632A TW 095122476 A TW095122476 A TW 095122476A TW 95122476 A TW95122476 A TW 95122476A TW 200717632 A TW200717632 A TW 200717632A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- substrate processing
- processing apparatus
- drying
- unit
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 10
- 238000003672 processing method Methods 0.000 title 1
- 238000001035 drying Methods 0.000 abstract 5
- 239000012530 fluid Substances 0.000 abstract 3
- 239000007788 liquid Substances 0.000 abstract 3
- 239000003595 mist Substances 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 239000008213 purified water Substances 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- 238000004140 cleaning Methods 0.000 abstract 1
- 239000003960 organic solvent Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005182321A JP4498986B2 (ja) | 2005-06-22 | 2005-06-22 | 基板処理装置および基板処理方法ならびにコンピュータ読取可能な記憶媒体 |
JP2005182320A JP4584783B2 (ja) | 2005-06-22 | 2005-06-22 | 基板処理装置および基板処理方法、ならびにコンピュータ読取可能な記憶媒体 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200717632A true TW200717632A (en) | 2007-05-01 |
TWI312539B TWI312539B (zh) | 2009-07-21 |
Family
ID=37570360
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095122476A TW200717632A (en) | 2005-06-22 | 2006-06-22 | Substrate processing apparatus and substrate processing method, and computer-readable storage medium |
Country Status (5)
Country | Link |
---|---|
US (2) | US8015984B2 (zh) |
EP (1) | EP1909313A4 (zh) |
KR (2) | KR101133394B1 (zh) |
TW (1) | TW200717632A (zh) |
WO (1) | WO2006137330A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI452613B (zh) * | 2007-09-27 | 2014-09-11 | Dainippon Screen Mfg | 基板處理裝置及基板處理方法 |
CN110634770A (zh) * | 2018-06-25 | 2019-12-31 | 东京毅力科创株式会社 | 基板处理装置、基板处理方法以及存储介质 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4630881B2 (ja) * | 2007-03-05 | 2011-02-09 | シャープ株式会社 | 基板洗浄装置 |
JP5138515B2 (ja) | 2008-09-05 | 2013-02-06 | 東京エレクトロン株式会社 | 蒸気発生器、蒸気発生方法および基板処理装置 |
US8169353B2 (en) * | 2009-09-30 | 2012-05-01 | Qualcomm, Incorporated | Wideband digital to analog converter with built-in load attenuator |
US20110289795A1 (en) * | 2010-02-16 | 2011-12-01 | Tomoatsu Ishibashi | Substrate drying apparatus, substrate drying method and control program |
KR20120028079A (ko) * | 2010-09-14 | 2012-03-22 | 삼성모바일디스플레이주식회사 | 기판의 세정 장치 및 세정 방법 |
JP5627518B2 (ja) * | 2011-03-16 | 2014-11-19 | 大日本スクリーン製造株式会社 | 基板処理装置および電源管理方法 |
JP4846057B1 (ja) * | 2011-03-17 | 2011-12-28 | ジャパン・フィールド株式会社 | 被洗浄物の洗浄装置 |
KR102092702B1 (ko) * | 2011-06-14 | 2020-05-28 | 삼성디스플레이 주식회사 | 기판 세정 장치 |
US8702871B2 (en) * | 2011-08-30 | 2014-04-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package assembly cleaning process using vaporized solvent |
CN103042002B (zh) * | 2013-01-07 | 2014-10-29 | 莱芜钢铁集团有限公司 | 一种焦油加工生产线及化验仪器清洗干燥装置 |
US8872685B2 (en) | 2013-03-15 | 2014-10-28 | Qualcomm Incorporated | Techniques to reduce harmonic distortions of impedance attenuators for low-power wideband high-resolution DACs |
TWI620237B (zh) * | 2015-01-16 | 2018-04-01 | 弘塑科技股份有限公司 | 整合水分去除與乾燥之處理設備及半導體晶圓之處理方法 |
JP6456792B2 (ja) * | 2015-08-07 | 2019-01-23 | 東京エレクトロン株式会社 | 基板液処理装置、基板液処理方法及び記憶媒体 |
TW201713751A (zh) * | 2015-10-06 | 2017-04-16 | 聯華電子股份有限公司 | 酸槽補酸系統與方法 |
JP2017157800A (ja) * | 2016-03-04 | 2017-09-07 | 東京エレクトロン株式会社 | 液処理方法、基板処理装置、及び記憶媒体 |
US20170365492A1 (en) * | 2016-06-16 | 2017-12-21 | Applied Materials, Inc. | Wafer processor door interface |
US10962285B2 (en) * | 2018-07-13 | 2021-03-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer drying system |
JP7241568B2 (ja) * | 2019-03-04 | 2023-03-17 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法および記憶媒体 |
JP7281925B2 (ja) * | 2019-03-07 | 2023-05-26 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法および記憶媒体 |
CN115507640A (zh) * | 2022-10-21 | 2022-12-23 | 滁州钰顺企业管理咨询合伙企业(有限合伙) | 一种晶圆背面蚀刻后干燥的方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4778532A (en) | 1985-06-24 | 1988-10-18 | Cfm Technologies Limited Partnership | Process and apparatus for treating wafers with process fluids |
JP3204503B2 (ja) * | 1990-09-13 | 2001-09-04 | 株式会社日立製作所 | 蒸気洗浄方法及びその装置 |
US5575079A (en) * | 1993-10-29 | 1996-11-19 | Tokyo Electron Limited | Substrate drying apparatus and substrate drying method |
JPH08211592A (ja) | 1995-02-07 | 1996-08-20 | Nikon Corp | 洗浄乾燥方法及び洗浄乾燥装置 |
KR980012044A (ko) * | 1996-03-01 | 1998-04-30 | 히가시 데츠로 | 기판건조장치 및 기판건조방법 |
US6068002A (en) * | 1997-04-02 | 2000-05-30 | Tokyo Electron Limited | Cleaning and drying apparatus, wafer processing system and wafer processing method |
JPH10321584A (ja) * | 1997-05-22 | 1998-12-04 | Mitsubishi Electric Corp | 乾燥装置および乾燥方法 |
JPH11176798A (ja) | 1997-12-08 | 1999-07-02 | Toshiba Corp | 基板洗浄・乾燥装置及び方法 |
JP2000040686A (ja) * | 1998-07-22 | 2000-02-08 | Mitsubishi Electric Corp | 半導体製造方法、半導体製造装置、及び混合ガス生成装置 |
JP3869671B2 (ja) | 2001-03-22 | 2007-01-17 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
KR100454241B1 (ko) | 2001-12-28 | 2004-10-26 | 한국디엔에스 주식회사 | 웨이퍼 건조 장비 |
TW200303581A (en) * | 2002-02-28 | 2003-09-01 | Tech Ltd A | Method and apparatus for cleaning and drying semiconductor wafer |
US6928748B2 (en) * | 2003-10-16 | 2005-08-16 | Taiwan Semiconductor Manufacturing Co., Ltd | Method to improve post wafer etch cleaning process |
JP4122024B2 (ja) | 2005-11-29 | 2008-07-23 | オリンパス株式会社 | 内視鏡挿入補助具 |
JP2007273758A (ja) * | 2006-03-31 | 2007-10-18 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
-
2006
- 2006-06-16 EP EP06766790A patent/EP1909313A4/en not_active Withdrawn
- 2006-06-16 US US11/922,502 patent/US8015984B2/en not_active Expired - Fee Related
- 2006-06-16 KR KR1020117002762A patent/KR101133394B1/ko active IP Right Grant
- 2006-06-16 KR KR1020077025994A patent/KR101124049B1/ko active IP Right Grant
- 2006-06-16 WO PCT/JP2006/312102 patent/WO2006137330A1/ja active Application Filing
- 2006-06-22 TW TW095122476A patent/TW200717632A/zh unknown
-
2011
- 2011-08-09 US US13/206,186 patent/US8303724B2/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI452613B (zh) * | 2007-09-27 | 2014-09-11 | Dainippon Screen Mfg | 基板處理裝置及基板處理方法 |
CN110634770A (zh) * | 2018-06-25 | 2019-12-31 | 东京毅力科创株式会社 | 基板处理装置、基板处理方法以及存储介质 |
Also Published As
Publication number | Publication date |
---|---|
WO2006137330A1 (ja) | 2006-12-28 |
TWI312539B (zh) | 2009-07-21 |
EP1909313A4 (en) | 2011-11-09 |
US8303724B2 (en) | 2012-11-06 |
KR20080020988A (ko) | 2008-03-06 |
EP1909313A1 (en) | 2008-04-09 |
KR101124049B1 (ko) | 2012-03-26 |
KR101133394B1 (ko) | 2012-04-09 |
US20110290280A1 (en) | 2011-12-01 |
US20090101186A1 (en) | 2009-04-23 |
US8015984B2 (en) | 2011-09-13 |
KR20110028534A (ko) | 2011-03-18 |
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