EA201200923A1 - Способ химической обработки поверхности полупроводниковой подложки (варианты) - Google Patents

Способ химической обработки поверхности полупроводниковой подложки (варианты)

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Publication number
EA201200923A1
EA201200923A1 EA201200923A EA201200923A EA201200923A1 EA 201200923 A1 EA201200923 A1 EA 201200923A1 EA 201200923 A EA201200923 A EA 201200923A EA 201200923 A EA201200923 A EA 201200923A EA 201200923 A1 EA201200923 A1 EA 201200923A1
Authority
EA
Eurasian Patent Office
Prior art keywords
semiconductor substrate
jet
chemical solution
chemical treatment
options
Prior art date
Application number
EA201200923A
Other languages
English (en)
Inventor
Джинджиа Джи
Женрон Ши
Юсен Кин
Original Assignee
Вукси Сантех Пауэр Ко., Лтд.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Вукси Сантех Пауэр Ко., Лтд. filed Critical Вукси Сантех Пауэр Ко., Лтд.
Publication of EA201200923A1 publication Critical patent/EA201200923A1/ru

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels

Abstract

Изобретение относится к области промышленного производства полупроводников. Изобретение предлагает способы химической обработки только нижней поверхности полупроводниковой подложки, включающие стадии размещения полупроводниковой подложки над химическим раствором при помощи вала и установку нижней поверхности полупроводниковой подложки на определенном расстоянии от поверхности жидкости химического раствора; химическую обработку нижней поверхности полупроводниковой подложки подачей струи химического раствора на нижнюю поверхность полупроводниковой подложки струйным аппаратом и таким образом смачивание нижней поверхности полупроводниковой подложки; в которых во время подачи струи струйным аппаратом смачивают только нижнюю поверхность полупроводниковой подложки, не затрагивая верхней поверхности полупроводниковой подложки; в течение всего процесса химической обработки нижняя поверхность полупроводниковой подложки не контактирует с поверхностью жидкости химического раствора за исключением места подачи струи, в котором струйным аппаратом подают струю химического раствора на нижнюю поверхность полупроводниковой подложки. Предлагаемые способы позволяют выполнить химическую обработку одной стороны полупроводниковой подложки без какой-либо защиты ее другой стороны.
EA201200923A 2007-07-16 2007-08-23 Способ химической обработки поверхности полупроводниковой подложки (варианты) EA201200923A1 (ru)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2007101358362A CN100541730C (zh) 2007-07-16 2007-07-16 半导体基板表面的化学处理方法及其装置

Publications (1)

Publication Number Publication Date
EA201200923A1 true EA201200923A1 (ru) 2013-03-29

Family

ID=39891614

Family Applications (2)

Application Number Title Priority Date Filing Date
EA201000134A EA018327B1 (ru) 2007-07-16 2007-08-23 Способ химической обработки поверхностей полупроводников и устройство для его выполнения
EA201200923A EA201200923A1 (ru) 2007-07-16 2007-08-23 Способ химической обработки поверхности полупроводниковой подложки (варианты)

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EA201000134A EA018327B1 (ru) 2007-07-16 2007-08-23 Способ химической обработки поверхностей полупроводников и устройство для его выполнения

Country Status (9)

Country Link
US (1) US20100307540A1 (ru)
EP (1) EP2175479A4 (ru)
JP (1) JP5032660B2 (ru)
KR (2) KR101193229B1 (ru)
CN (1) CN100541730C (ru)
AU (1) AU2007356732B2 (ru)
CA (1) CA2693135A1 (ru)
EA (2) EA018327B1 (ru)
WO (1) WO2009009931A1 (ru)

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JP2011100872A (ja) * 2009-11-06 2011-05-19 Mitsubishi Electric Corp 基板表面処理装置、基板処理方法および光起電力装置の製造方法
CN102856238A (zh) * 2011-06-27 2013-01-02 均豪精密工业股份有限公司 表面处理装置及方法
DE102011111175B4 (de) * 2011-08-25 2014-01-09 Rena Gmbh Verfahren und Vorrichtung zur Flüssigkeits-Niveauregelung bei Durchlaufanlagen
CN102315092B (zh) * 2011-09-09 2013-07-31 深圳市华星光电技术有限公司 湿蚀刻装置及方法
WO2013071343A1 (en) * 2011-11-15 2013-05-23 Newsouth Innovations Pty Limited Metal contact scheme for solar cells
JP2013118209A (ja) * 2011-12-01 2013-06-13 Tokyo Ohka Kogyo Co Ltd 基板洗浄装置
CN105592944B (zh) * 2013-07-29 2018-05-11 贝克太阳能有限公司 对基板进行的空间有限的加工
CN106783669B (zh) * 2015-11-25 2019-04-12 无锡华瑛微电子技术有限公司 半导体处理装置及方法
CN112239068A (zh) * 2019-07-19 2021-01-19 亚智科技股份有限公司 条棒式基板运输装置及其方法

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JP2513934B2 (ja) * 1991-03-30 1996-07-10 株式会社芝浦製作所 基板洗浄装置
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DE102005062528A1 (de) * 2005-12-16 2007-06-21 Gebr. Schmid Gmbh & Co. Vorrichtung und Verfahren zur Oberflächenbehandlung von Substraten

Also Published As

Publication number Publication date
EA018327B1 (ru) 2013-07-30
KR101193229B1 (ko) 2012-10-19
JP2010533967A (ja) 2010-10-28
WO2009009931A1 (fr) 2009-01-22
CN100541730C (zh) 2009-09-16
EP2175479A1 (en) 2010-04-14
EP2175479A4 (en) 2012-01-18
AU2007356732B2 (en) 2012-07-12
KR20100043237A (ko) 2010-04-28
AU2007356732A1 (en) 2009-01-22
JP5032660B2 (ja) 2012-09-26
CA2693135A1 (en) 2009-01-22
EA201000134A1 (ru) 2010-06-30
KR20120041810A (ko) 2012-05-02
US20100307540A1 (en) 2010-12-09
CN101256953A (zh) 2008-09-03

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