WO2010013985A2 - 박막 트랜지스터 어레이 기판의 제조방법 및 제조장치 - Google Patents

박막 트랜지스터 어레이 기판의 제조방법 및 제조장치 Download PDF

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Publication number
WO2010013985A2
WO2010013985A2 PCT/KR2009/004321 KR2009004321W WO2010013985A2 WO 2010013985 A2 WO2010013985 A2 WO 2010013985A2 KR 2009004321 W KR2009004321 W KR 2009004321W WO 2010013985 A2 WO2010013985 A2 WO 2010013985A2
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WO
WIPO (PCT)
Prior art keywords
thin
manufacturing
film transistor
array substrate
transistor array
Prior art date
Application number
PCT/KR2009/004321
Other languages
English (en)
French (fr)
Other versions
WO2010013985A3 (ko
Inventor
이형섭
Original Assignee
부경디스플레이 (주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 부경디스플레이 (주) filed Critical 부경디스플레이 (주)
Priority to CN2009801375863A priority Critical patent/CN102171605B/zh
Priority to US13/056,971 priority patent/US8173457B2/en
Publication of WO2010013985A2 publication Critical patent/WO2010013985A2/ko
Publication of WO2010013985A3 publication Critical patent/WO2010013985A3/ko

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)

Abstract

본 발명은 박막 트랜지스터 어레이 기판의 제조 공정을 단순화시킴과 아울러 공정 시간을 감소시킬 수 있는 박막 트랜지스터 어레이 기판의 제조방법 및 제조장치에 관한 것으로, 레이저 스크라이빙 공정을 이용하여 게이트 패턴을 형성하는 공정; 반도체 패턴을 형성하는 공정; 데이터 패턴을 형성하는 공정; 소스 전극 패턴 및 드레인 전극 패턴 사이에 노출된 오믹 컨택층 패턴을 제거하는 공정; 및 도전 패턴을 형성하는 공정 중 적어도 하나의 공정을 수행하는 것을 포함하여 이루어진 박막 트랜지스터 어레이 기판의 제조방법을 제공하는 것을 특징으로 한다.
PCT/KR2009/004321 2008-08-01 2009-08-03 박막 트랜지스터 어레이 기판의 제조방법 및 제조장치 WO2010013985A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2009801375863A CN102171605B (zh) 2008-08-01 2009-08-03 用于制造薄膜晶体管阵列基板的方法和装置
US13/056,971 US8173457B2 (en) 2008-08-01 2009-08-03 Method and apparatus for manufacturing thin-film transistor array substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0075662 2008-08-01
KR1020080075662A KR101499651B1 (ko) 2008-08-01 2008-08-01 박막 트랜지스터 어레이 기판의 제조방법 및 제조장치

Publications (2)

Publication Number Publication Date
WO2010013985A2 true WO2010013985A2 (ko) 2010-02-04
WO2010013985A3 WO2010013985A3 (ko) 2010-06-10

Family

ID=41610878

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/004321 WO2010013985A2 (ko) 2008-08-01 2009-08-03 박막 트랜지스터 어레이 기판의 제조방법 및 제조장치

Country Status (5)

Country Link
US (1) US8173457B2 (ko)
KR (1) KR101499651B1 (ko)
CN (1) CN102171605B (ko)
TW (1) TWI487032B (ko)
WO (1) WO2010013985A2 (ko)

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KR20050089381A (ko) * 2004-03-04 2005-09-08 삼성에스디아이 주식회사 액티브 매트릭스형 표시 장치의 제조방법
KR101232736B1 (ko) * 2009-10-01 2013-02-13 엘지디스플레이 주식회사 어레이 기판
US10028394B2 (en) 2012-12-17 2018-07-17 Intel Corporation Electrical interconnect formed through buildup process
EP2754524B1 (de) 2013-01-15 2015-11-25 Corning Laser Technologies GmbH Verfahren und Vorrichtung zum laserbasierten Bearbeiten von flächigen Substraten, d.h. Wafer oder Glaselement, unter Verwendung einer Laserstrahlbrennlinie
EP2781296B1 (de) 2013-03-21 2020-10-21 Corning Laser Technologies GmbH Vorrichtung und verfahren zum ausschneiden von konturen aus flächigen substraten mittels laser
US8927069B1 (en) * 2013-10-02 2015-01-06 Eritek, Inc. Method and apparatus for improving radio frequency signal transmission through low-emissivity coated glass
US9517963B2 (en) 2013-12-17 2016-12-13 Corning Incorporated Method for rapid laser drilling of holes in glass and products made therefrom
US11556039B2 (en) 2013-12-17 2023-01-17 Corning Incorporated Electrochromic coated glass articles and methods for laser processing the same
KR102445217B1 (ko) 2014-07-08 2022-09-20 코닝 인코포레이티드 재료를 레이저 가공하는 방법 및 장치
CN107073642B (zh) 2014-07-14 2020-07-28 康宁股份有限公司 使用长度和直径可调的激光束焦线来加工透明材料的系统和方法
EP3274306B1 (en) 2015-03-24 2021-04-14 Corning Incorporated Laser cutting and processing of display glass compositions
US10730783B2 (en) 2016-09-30 2020-08-04 Corning Incorporated Apparatuses and methods for laser processing transparent workpieces using non-axisymmetric beam spots
JP7066701B2 (ja) * 2016-10-24 2022-05-13 コーニング インコーポレイテッド シート状ガラス基体のレーザに基づく加工のための基体処理ステーション
US20180118602A1 (en) * 2016-11-01 2018-05-03 Corning Incorporated Glass sheet transfer apparatuses for laser-based machining of sheet-like glass substrates

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KR20060108945A (ko) * 2005-04-13 2006-10-18 삼성에스디아이 주식회사 박막 트랜지스터의 제조방법 및 이에 의해 제조된 박막트랜지스터
KR20080062647A (ko) * 2006-12-29 2008-07-03 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 그의 제조방법
KR20080064531A (ko) * 2007-01-05 2008-07-09 삼성전자주식회사 게이트 구동회로 및 이를 포함하는 액정 표시 장치, 박막트랜지스터 기판의 제조 방법

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KR20050105422A (ko) * 2004-05-01 2005-11-04 엘지.필립스 엘시디 주식회사 액정표시패널 및 그 제조 방법
KR101112547B1 (ko) * 2005-01-18 2012-03-13 삼성전자주식회사 박막 트랜지스터 표시판 및 박막 트랜지스터 표시판의제조 방법
KR101211345B1 (ko) * 2005-12-14 2012-12-11 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100557499B1 (ko) * 2002-12-31 2006-03-07 엘지.필립스 엘시디 주식회사 패턴형성방법 및 이를 이용한 액정표시소자와 그 제조방법
KR20060108945A (ko) * 2005-04-13 2006-10-18 삼성에스디아이 주식회사 박막 트랜지스터의 제조방법 및 이에 의해 제조된 박막트랜지스터
KR20080062647A (ko) * 2006-12-29 2008-07-03 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 그의 제조방법
KR20080064531A (ko) * 2007-01-05 2008-07-09 삼성전자주식회사 게이트 구동회로 및 이를 포함하는 액정 표시 장치, 박막트랜지스터 기판의 제조 방법

Also Published As

Publication number Publication date
CN102171605B (zh) 2013-07-31
KR20100013914A (ko) 2010-02-10
US20110143470A1 (en) 2011-06-16
KR101499651B1 (ko) 2015-03-06
WO2010013985A3 (ko) 2010-06-10
TW201007852A (en) 2010-02-16
TWI487032B (zh) 2015-06-01
US8173457B2 (en) 2012-05-08
CN102171605A (zh) 2011-08-31

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