WO2010013985A3 - 박막 트랜지스터 어레이 기판의 제조방법 및 제조장치 - Google Patents

박막 트랜지스터 어레이 기판의 제조방법 및 제조장치 Download PDF

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Publication number
WO2010013985A3
WO2010013985A3 PCT/KR2009/004321 KR2009004321W WO2010013985A3 WO 2010013985 A3 WO2010013985 A3 WO 2010013985A3 KR 2009004321 W KR2009004321 W KR 2009004321W WO 2010013985 A3 WO2010013985 A3 WO 2010013985A3
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WO
WIPO (PCT)
Prior art keywords
thin
manufacturing
film transistor
array substrate
transistor array
Prior art date
Application number
PCT/KR2009/004321
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English (en)
French (fr)
Other versions
WO2010013985A2 (ko
Inventor
이형섭
Original Assignee
부경디스플레이 (주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 부경디스플레이 (주) filed Critical 부경디스플레이 (주)
Priority to US13/056,971 priority Critical patent/US8173457B2/en
Priority to CN2009801375863A priority patent/CN102171605B/zh
Publication of WO2010013985A2 publication Critical patent/WO2010013985A2/ko
Publication of WO2010013985A3 publication Critical patent/WO2010013985A3/ko

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)

Abstract

본 발명은 박막 트랜지스터 어레이 기판의 제조 공정을 단순화시킴과 아울러 공정 시간을 감소시킬 수 있는 박막 트랜지스터 어레이 기판의 제조방법 및 제조장치에 관한 것으로, 레이저 스크라이빙 공정을 이용하여 게이트 패턴을 형성하는 공정; 반도체 패턴을 형성하는 공정; 데이터 패턴을 형성하는 공정; 소스 전극 패턴 및 드레인 전극 패턴 사이에 노출된 오믹 컨택층 패턴을 제거하는 공정; 및 도전 패턴을 형성하는 공정 중 적어도 하나의 공정을 수행하는 것을 포함하여 이루어진 박막 트랜지스터 어레이 기판의 제조방법을 제공하는 것을 특징으로 한다.
PCT/KR2009/004321 2008-08-01 2009-08-03 박막 트랜지스터 어레이 기판의 제조방법 및 제조장치 WO2010013985A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US13/056,971 US8173457B2 (en) 2008-08-01 2009-08-03 Method and apparatus for manufacturing thin-film transistor array substrate
CN2009801375863A CN102171605B (zh) 2008-08-01 2009-08-03 用于制造薄膜晶体管阵列基板的方法和装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080075662A KR101499651B1 (ko) 2008-08-01 2008-08-01 박막 트랜지스터 어레이 기판의 제조방법 및 제조장치
KR10-2008-0075662 2008-08-01

Publications (2)

Publication Number Publication Date
WO2010013985A2 WO2010013985A2 (ko) 2010-02-04
WO2010013985A3 true WO2010013985A3 (ko) 2010-06-10

Family

ID=41610878

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/004321 WO2010013985A2 (ko) 2008-08-01 2009-08-03 박막 트랜지스터 어레이 기판의 제조방법 및 제조장치

Country Status (5)

Country Link
US (1) US8173457B2 (ko)
KR (1) KR101499651B1 (ko)
CN (1) CN102171605B (ko)
TW (1) TWI487032B (ko)
WO (1) WO2010013985A2 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
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KR20050089381A (ko) * 2004-03-04 2005-09-08 삼성에스디아이 주식회사 액티브 매트릭스형 표시 장치의 제조방법
KR101232736B1 (ko) * 2009-10-01 2013-02-13 엘지디스플레이 주식회사 어레이 기판
US10028394B2 (en) * 2012-12-17 2018-07-17 Intel Corporation Electrical interconnect formed through buildup process
EP2754524B1 (de) 2013-01-15 2015-11-25 Corning Laser Technologies GmbH Verfahren und Vorrichtung zum laserbasierten Bearbeiten von flächigen Substraten, d.h. Wafer oder Glaselement, unter Verwendung einer Laserstrahlbrennlinie
EP2781296B1 (de) 2013-03-21 2020-10-21 Corning Laser Technologies GmbH Vorrichtung und verfahren zum ausschneiden von konturen aus flächigen substraten mittels laser
US8927069B1 (en) 2013-10-02 2015-01-06 Eritek, Inc. Method and apparatus for improving radio frequency signal transmission through low-emissivity coated glass
US11556039B2 (en) 2013-12-17 2023-01-17 Corning Incorporated Electrochromic coated glass articles and methods for laser processing the same
US9517963B2 (en) 2013-12-17 2016-12-13 Corning Incorporated Method for rapid laser drilling of holes in glass and products made therefrom
US9815144B2 (en) 2014-07-08 2017-11-14 Corning Incorporated Methods and apparatuses for laser processing materials
CN107073642B (zh) 2014-07-14 2020-07-28 康宁股份有限公司 使用长度和直径可调的激光束焦线来加工透明材料的系统和方法
HUE055461T2 (hu) 2015-03-24 2021-11-29 Corning Inc Kijelzõ üveg kompozíciók lézeres vágása és feldolgozása
WO2018064409A1 (en) 2016-09-30 2018-04-05 Corning Incorporated Apparatuses and methods for laser processing transparent workpieces using non-axisymmetric beam spots
WO2018081031A1 (en) * 2016-10-24 2018-05-03 Corning Incorporated Substrate processing station for laser-based machining of sheet-like glass substrates
US20180118602A1 (en) * 2016-11-01 2018-05-03 Corning Incorporated Glass sheet transfer apparatuses for laser-based machining of sheet-like glass substrates

Citations (4)

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KR20060108945A (ko) * 2005-04-13 2006-10-18 삼성에스디아이 주식회사 박막 트랜지스터의 제조방법 및 이에 의해 제조된 박막트랜지스터
KR20080062647A (ko) * 2006-12-29 2008-07-03 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 그의 제조방법
KR20080064531A (ko) * 2007-01-05 2008-07-09 삼성전자주식회사 게이트 구동회로 및 이를 포함하는 액정 표시 장치, 박막트랜지스터 기판의 제조 방법

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KR20050105422A (ko) * 2004-05-01 2005-11-04 엘지.필립스 엘시디 주식회사 액정표시패널 및 그 제조 방법
KR101112547B1 (ko) * 2005-01-18 2012-03-13 삼성전자주식회사 박막 트랜지스터 표시판 및 박막 트랜지스터 표시판의제조 방법
KR101211345B1 (ko) * 2005-12-14 2012-12-11 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100557499B1 (ko) * 2002-12-31 2006-03-07 엘지.필립스 엘시디 주식회사 패턴형성방법 및 이를 이용한 액정표시소자와 그 제조방법
KR20060108945A (ko) * 2005-04-13 2006-10-18 삼성에스디아이 주식회사 박막 트랜지스터의 제조방법 및 이에 의해 제조된 박막트랜지스터
KR20080062647A (ko) * 2006-12-29 2008-07-03 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 그의 제조방법
KR20080064531A (ko) * 2007-01-05 2008-07-09 삼성전자주식회사 게이트 구동회로 및 이를 포함하는 액정 표시 장치, 박막트랜지스터 기판의 제조 방법

Also Published As

Publication number Publication date
TW201007852A (en) 2010-02-16
CN102171605B (zh) 2013-07-31
US20110143470A1 (en) 2011-06-16
WO2010013985A2 (ko) 2010-02-04
TWI487032B (zh) 2015-06-01
CN102171605A (zh) 2011-08-31
US8173457B2 (en) 2012-05-08
KR20100013914A (ko) 2010-02-10
KR101499651B1 (ko) 2015-03-06

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