DE602007006147D1 - Prozesskammer, Inline-Beschichtungsanlage und Verfahren zur Behandlung eines Substrats - Google Patents

Prozesskammer, Inline-Beschichtungsanlage und Verfahren zur Behandlung eines Substrats

Info

Publication number
DE602007006147D1
DE602007006147D1 DE602007006147T DE602007006147T DE602007006147D1 DE 602007006147 D1 DE602007006147 D1 DE 602007006147D1 DE 602007006147 T DE602007006147 T DE 602007006147T DE 602007006147 T DE602007006147 T DE 602007006147T DE 602007006147 D1 DE602007006147 D1 DE 602007006147D1
Authority
DE
Germany
Prior art keywords
carrier
process chamber
substrate
contact
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007006147T
Other languages
English (en)
Inventor
Juergen Henrich
Michael Schaefer
Edgar Haberkorn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE602007006147D1 publication Critical patent/DE602007006147D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
DE602007006147T 2007-02-02 2007-02-02 Prozesskammer, Inline-Beschichtungsanlage und Verfahren zur Behandlung eines Substrats Active DE602007006147D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP07101677A EP1953259B1 (de) 2007-02-02 2007-02-02 Prozesskammer, Inline-Beschichtungsanlage und Verfahren zur Behandlung eines Substrats

Publications (1)

Publication Number Publication Date
DE602007006147D1 true DE602007006147D1 (de) 2010-06-10

Family

ID=38230074

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007006147T Active DE602007006147D1 (de) 2007-02-02 2007-02-02 Prozesskammer, Inline-Beschichtungsanlage und Verfahren zur Behandlung eines Substrats

Country Status (9)

Country Link
US (1) US7837796B2 (de)
EP (1) EP1953259B1 (de)
JP (1) JP2008208455A (de)
KR (1) KR100978698B1 (de)
CN (1) CN101298669B (de)
AT (1) ATE466118T1 (de)
DE (1) DE602007006147D1 (de)
ES (1) ES2345121T3 (de)
TW (1) TW200837810A (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE555496T1 (de) * 2007-03-13 2012-05-15 Applied Materials Inc Vorrichtung zum bewegen eines carriers in einer vakuumkammer
US8244728B2 (en) * 2007-06-12 2012-08-14 International Business Machines Corporation Method and apparatus for data exploration
JP5431901B2 (ja) * 2008-12-26 2014-03-05 キヤノンアネルバ株式会社 インライン真空処理装置、インライン真空処理装置の制御方法、情報記録媒体の製造方法
WO2012134084A2 (en) * 2011-03-25 2012-10-04 Lg Electronics Inc. Plasma enhanced chemical vapor deposition apparatus and method for controlling the same
WO2012134083A2 (en) * 2011-03-25 2012-10-04 Lg Electronics Inc. Plasma enhanced chemical vapor deposition apparatus and method for controlling the same
DE102012100927A1 (de) * 2012-02-06 2013-08-08 Roth & Rau Ag Prozessmodul
DE102015009861A1 (de) 2015-08-04 2017-02-09 Manz Ag Substratbearbeitungsvorrichtung und Beschichtungsverfahren

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JPS617631A (ja) * 1984-06-22 1986-01-14 Toshiba Corp 半導体薄膜の分解装置
JPS6328863A (ja) 1986-07-22 1988-02-06 Ulvac Corp 真空処理装置
US5210959A (en) * 1991-08-19 1993-05-18 Praxair Technology, Inc. Ambient-free processing system
US6491802B2 (en) * 1992-10-28 2002-12-10 Hitachi, Ltd. Magnetic film forming system
DE4301189C2 (de) * 1993-01-19 2000-12-14 Leybold Ag Vorrichtung zum Beschichten von Substraten
US5900103A (en) * 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
US5705044A (en) * 1995-08-07 1998-01-06 Akashic Memories Corporation Modular sputtering machine having batch processing and serial thin film sputtering
CH692741A5 (de) * 1997-07-08 2002-10-15 Unaxis Trading Ltd C O Balzers Verfahren zur Herstellung in Vakuum oberflächenbehandelter Werkstücke und Vakuumbehandlungsanlage zu dessen Durchführung
TW589391B (en) * 1997-07-08 2004-06-01 Unaxis Trading Ag Process for vacuum treating workpieces, and corresponding process equipment
KR100557579B1 (ko) * 1997-11-05 2006-05-03 에스케이 주식회사 박막제조장치
DE19907601A1 (de) 1999-02-22 2000-08-31 Angew Solarenergie Ase Gmbh Verfahren sowie Anordnung zum kontinuierlichen Behandeln von Gegenständen
JP3589581B2 (ja) 1999-02-26 2004-11-17 株式会社カネカ タンデム型の薄膜光電変換装置の製造方法
JP3842935B2 (ja) 1999-10-22 2006-11-08 三菱重工業株式会社 トレイレス斜め基板搬送装置
JP4268303B2 (ja) * 2000-02-01 2009-05-27 キヤノンアネルバ株式会社 インライン型基板処理装置
JP2002203883A (ja) 2000-12-27 2002-07-19 Shibaura Mechatronics Corp 多層膜の形成装置
DE10134513A1 (de) 2001-07-16 2003-01-30 Unaxis Balzers Ag Hebe-und Stützvorichtung
US7351291B2 (en) * 2002-02-20 2008-04-01 Tokyo Electron Limited Semiconductor processing system
US6960263B2 (en) * 2002-04-25 2005-11-01 Applied Materials, Inc. Shadow frame with cross beam for semiconductor equipment
FR2843129B1 (fr) 2002-08-01 2006-01-06 Tecmachine Installation pour le traitement sous vide notamment de substrats
KR20040048018A (ko) * 2002-12-02 2004-06-07 주식회사 에이디피엔지니어링 Ｆｐｄ 제조장치
TWI327336B (en) * 2003-01-13 2010-07-11 Oc Oerlikon Balzers Ag Arrangement for processing a substrate
EP1661161A2 (de) 2003-08-07 2006-05-31 Sundew Technologies, LLC Perimeter-partitions-ventil mit geschützten dichtungen
JP4685404B2 (ja) * 2003-10-15 2011-05-18 三星モバイルディスプレイ株式會社 有機電界発光素子の垂直蒸着方法，その装置，及び有機電界発光素子の垂直蒸着装置に使用される蒸着源
JP4653418B2 (ja) * 2004-05-17 2011-03-16 芝浦メカトロニクス株式会社 真空処理装置および光ディスクの製造方法
JP4098283B2 (ja) 2004-07-30 2008-06-11 株式会社アルバック スパッタリング装置
KR100603408B1 (ko) 2004-12-16 2006-07-20 삼성에스디아이 주식회사 수직형 마스크 이송장치 및 이를 구비한 증착장치
JP4331707B2 (ja) * 2004-12-16 2009-09-16 三星モバイルディスプレイ株式會社 整列システム、垂直型トレイ移送装置及びこれを具備した蒸着装置
KR100583522B1 (ko) * 2005-01-05 2006-05-25 삼성에스디아이 주식회사 기판 고정 트레이, 이를 이용한 기판 정렬 시스템 및 그방법
JP4364196B2 (ja) * 2005-01-05 2009-11-11 三星モバイルディスプレイ株式會社 トレイ用整列システム

Also Published As

Publication number Publication date
CN101298669B (zh) 2010-11-10
EP1953259A1 (de) 2008-08-06
KR20080072538A (ko) 2008-08-06
ATE466118T1 (de) 2010-05-15
TW200837810A (en) 2008-09-16
US20080184933A1 (en) 2008-08-07
US7837796B2 (en) 2010-11-23
KR100978698B1 (ko) 2010-08-30
EP1953259B1 (de) 2010-04-28
JP2008208455A (ja) 2008-09-11
ES2345121T3 (es) 2010-09-15
CN101298669A (zh) 2008-11-05

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