TW200707745A - Insulation gate type semiconductor device and its manufacturing method - Google Patents

Insulation gate type semiconductor device and its manufacturing method

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Publication number
TW200707745A
TW200707745A TW095127946A TW95127946A TW200707745A TW 200707745 A TW200707745 A TW 200707745A TW 095127946 A TW095127946 A TW 095127946A TW 95127946 A TW95127946 A TW 95127946A TW 200707745 A TW200707745 A TW 200707745A
Authority
TW
Taiwan
Prior art keywords
metal electrode
electrode layer
element region
layer
type semiconductor
Prior art date
Application number
TW095127946A
Other languages
English (en)
Other versions
TWI318007B (en
Inventor
Kazunari Kushiyama
Tetsuya Okada
Makoto Oikawa
Original Assignee
Sanyo Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Publication of TW200707745A publication Critical patent/TW200707745A/zh
Application granted granted Critical
Publication of TWI318007B publication Critical patent/TWI318007B/zh

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  • Engineering & Computer Science (AREA)
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  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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TW095127946A 2005-08-02 2006-07-31 Insulation gate type semiconductor device and its manufacturing method TWI318007B (en)

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JP5511124B2 (ja) * 2006-09-28 2014-06-04 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 絶縁ゲート型半導体装置
JP5337470B2 (ja) * 2008-04-21 2013-11-06 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 絶縁ゲート型半導体装置
JP5432492B2 (ja) * 2008-09-30 2014-03-05 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 絶縁ゲート型半導体装置
JP2010087126A (ja) * 2008-09-30 2010-04-15 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置
JP2010087124A (ja) * 2008-09-30 2010-04-15 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置
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CN100576565C (zh) 2009-12-30
JP2007042817A (ja) 2007-02-15
US7417295B2 (en) 2008-08-26

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