TW200707745A - Insulation gate type semiconductor device and its manufacturing method - Google Patents
Insulation gate type semiconductor device and its manufacturing methodInfo
- Publication number
- TW200707745A TW200707745A TW095127946A TW95127946A TW200707745A TW 200707745 A TW200707745 A TW 200707745A TW 095127946 A TW095127946 A TW 095127946A TW 95127946 A TW95127946 A TW 95127946A TW 200707745 A TW200707745 A TW 200707745A
- Authority
- TW
- Taiwan
- Prior art keywords
- metal electrode
- electrode layer
- element region
- layer
- type semiconductor
- Prior art date
Links
- 238000009413 insulation Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 10
- 239000002184 metal Substances 0.000 abstract 7
- 230000005496 eutectics Effects 0.000 abstract 2
- 239000011229 interlayer Substances 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
Classifications
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- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7808—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a breakdown diode, e.g. Zener diode
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- H01L2924/01—Chemical elements
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- H01L2924/01022—Titanium [Ti]
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- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
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JP2005224606A JP2007042817A (ja) | 2005-08-02 | 2005-08-02 | 絶縁ゲート型半導体装置およびその製造方法 |
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TW200707745A true TW200707745A (en) | 2007-02-16 |
TWI318007B TWI318007B (en) | 2009-12-01 |
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TW095127946A TWI318007B (en) | 2005-08-02 | 2006-07-31 | Insulation gate type semiconductor device and its manufacturing method |
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US (1) | US7417295B2 (zh) |
JP (1) | JP2007042817A (zh) |
CN (1) | CN100576565C (zh) |
TW (1) | TWI318007B (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008085188A (ja) * | 2006-09-28 | 2008-04-10 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置 |
JP5511124B2 (ja) * | 2006-09-28 | 2014-06-04 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 絶縁ゲート型半導体装置 |
JP5337470B2 (ja) * | 2008-04-21 | 2013-11-06 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 絶縁ゲート型半導体装置 |
JP5432492B2 (ja) * | 2008-09-30 | 2014-03-05 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 絶縁ゲート型半導体装置 |
JP2010087126A (ja) * | 2008-09-30 | 2010-04-15 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置 |
JP2010087124A (ja) * | 2008-09-30 | 2010-04-15 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置 |
JP2010087127A (ja) * | 2008-09-30 | 2010-04-15 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置 |
JP2010177454A (ja) | 2009-01-29 | 2010-08-12 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置 |
JP5599388B2 (ja) * | 2009-04-28 | 2014-10-01 | 三菱電機株式会社 | 電力用半導体装置 |
TWI422041B (zh) | 2010-09-01 | 2014-01-01 | Pfc Device Corp | 溝渠隔絕式金氧半p-n接面二極體結構及其製作方法 |
JP5777319B2 (ja) | 2010-10-27 | 2015-09-09 | 三菱電機株式会社 | 半導体装置 |
JP6000513B2 (ja) * | 2011-02-17 | 2016-09-28 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 絶縁ゲート型半導体装置 |
CN103187287B (zh) * | 2011-12-29 | 2016-08-10 | 立新半导体有限公司 | 一种沟槽半导体分立器件的制备方法 |
JP5926988B2 (ja) * | 2012-03-08 | 2016-05-25 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US10068834B2 (en) * | 2013-03-04 | 2018-09-04 | Cree, Inc. | Floating bond pad for power semiconductor devices |
EP3076431B1 (en) * | 2013-11-28 | 2020-07-08 | Rohm Co., Ltd. | Semiconductor device |
JP6244272B2 (ja) * | 2014-06-30 | 2017-12-06 | 株式会社日立製作所 | 半導体装置 |
JP2017041566A (ja) * | 2015-08-20 | 2017-02-23 | セイコーエプソン株式会社 | 半導体装置及びその製造方法、電子機器並びに移動体 |
Family Cites Families (22)
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JPS5344171A (en) * | 1976-10-04 | 1978-04-20 | Seiko Epson Corp | Semiconductor device |
JPH02113533A (ja) * | 1988-10-22 | 1990-04-25 | Nec Corp | 半導体装置 |
JPH05218125A (ja) * | 1992-02-07 | 1993-08-27 | Nec Kansai Ltd | ボンディングパッドの構造 |
JP3432284B2 (ja) * | 1994-07-04 | 2003-08-04 | 三菱電機株式会社 | 半導体装置 |
US5665996A (en) | 1994-12-30 | 1997-09-09 | Siliconix Incorporated | Vertical power mosfet having thick metal layer to reduce distributed resistance |
JPH10163319A (ja) * | 1996-11-29 | 1998-06-19 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP2974022B1 (ja) * | 1998-10-01 | 1999-11-08 | ヤマハ株式会社 | 半導体装置のボンディングパッド構造 |
JP2000223527A (ja) * | 1999-01-28 | 2000-08-11 | Mitsubishi Electric Corp | 半導体装置 |
JP2002198374A (ja) * | 2000-10-16 | 2002-07-12 | Sharp Corp | 半導体装置およびその製造方法 |
US6465895B1 (en) * | 2001-04-05 | 2002-10-15 | Samsung Electronics Co., Ltd. | Bonding pad structures for semiconductor devices and fabrication methods thereof |
JP2002368218A (ja) | 2001-06-08 | 2002-12-20 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置 |
DE10139956A1 (de) * | 2001-08-21 | 2003-03-13 | Koninkl Philips Electronics Nv | ESD Schutz für CMOS-Ausgangsstufe |
JP2003142485A (ja) * | 2001-11-01 | 2003-05-16 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP3967199B2 (ja) * | 2002-06-04 | 2007-08-29 | シャープ株式会社 | 半導体装置及びその製造方法 |
WO2004097916A1 (ja) * | 2003-04-30 | 2004-11-11 | Fujitsu Limited | 半導体装置の製造方法、半導体ウエハおよび半導体装置 |
JP2005019452A (ja) * | 2003-06-23 | 2005-01-20 | Toshiba Corp | 半導体装置 |
US7005369B2 (en) * | 2003-08-21 | 2006-02-28 | Intersil American Inc. | Active area bonding compatible high current structures |
JP4242336B2 (ja) * | 2004-02-05 | 2009-03-25 | パナソニック株式会社 | 半導体装置 |
JP2005243907A (ja) * | 2004-02-26 | 2005-09-08 | Renesas Technology Corp | 半導体装置 |
JP4517843B2 (ja) * | 2004-12-10 | 2010-08-04 | エルピーダメモリ株式会社 | 半導体装置 |
JP2006332533A (ja) * | 2005-05-30 | 2006-12-07 | Fujitsu Ltd | 半導体素子及びその製造方法 |
JP4671814B2 (ja) * | 2005-09-02 | 2011-04-20 | パナソニック株式会社 | 半導体装置 |
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2005
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2006
- 2006-07-14 CN CN200610106399A patent/CN100576565C/zh not_active Expired - Fee Related
- 2006-07-31 TW TW095127946A patent/TWI318007B/zh not_active IP Right Cessation
- 2006-08-01 US US11/496,723 patent/US7417295B2/en active Active
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US20070034943A1 (en) | 2007-02-15 |
TWI318007B (en) | 2009-12-01 |
CN1909246A (zh) | 2007-02-07 |
CN100576565C (zh) | 2009-12-30 |
JP2007042817A (ja) | 2007-02-15 |
US7417295B2 (en) | 2008-08-26 |
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