TW200707745A - Insulation gate type semiconductor device and its manufacturing method - Google Patents

Insulation gate type semiconductor device and its manufacturing method

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Publication number
TW200707745A
TW200707745A TW095127946A TW95127946A TW200707745A TW 200707745 A TW200707745 A TW 200707745A TW 095127946 A TW095127946 A TW 095127946A TW 95127946 A TW95127946 A TW 95127946A TW 200707745 A TW200707745 A TW 200707745A
Authority
TW
Taiwan
Prior art keywords
metal electrode
electrode layer
element region
layer
type semiconductor
Prior art date
Application number
TW095127946A
Other languages
English (en)
Other versions
TWI318007B (en
Inventor
Kazunari Kushiyama
Tetsuya Okada
Makoto Oikawa
Original Assignee
Sanyo Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Publication of TW200707745A publication Critical patent/TW200707745A/zh
Application granted granted Critical
Publication of TWI318007B publication Critical patent/TWI318007B/zh

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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7808—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a breakdown diode, e.g. Zener diode
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    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
TW095127946A 2005-08-02 2006-07-31 Insulation gate type semiconductor device and its manufacturing method TWI318007B (en)

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JP5511124B2 (ja) * 2006-09-28 2014-06-04 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 絶縁ゲート型半導体装置
JP5337470B2 (ja) * 2008-04-21 2013-11-06 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 絶縁ゲート型半導体装置
JP5432492B2 (ja) * 2008-09-30 2014-03-05 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 絶縁ゲート型半導体装置
JP2010087126A (ja) * 2008-09-30 2010-04-15 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置
JP2010087124A (ja) * 2008-09-30 2010-04-15 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置
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CN100576565C (zh) 2009-12-30
JP2007042817A (ja) 2007-02-15
US7417295B2 (en) 2008-08-26

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