JP2010087126A - 絶縁ゲート型半導体装置 - Google Patents
絶縁ゲート型半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 230000001681 protective effect Effects 0.000 claims description 25
- 239000010410 layer Substances 0.000 description 169
- 150000004767 nitrides Chemical class 0.000 description 13
- 239000012535 impurity Substances 0.000 description 11
- 108091006146 Channels Proteins 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 10
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 210000000746 body region Anatomy 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Abstract
【解決手段】電極構造を2層とし、保護ダイオードは素子領域外で素子領域に隣接し、素子領域外周の、主な電流経路に垂直となる辺に隣接して配置する。また、2層目のゲート電極層(ゲートパッド部)の少なくとも一部に保護ダイオードとの非重畳領域を形成する。2層目のゲート電極層は一部が1層目のゲート電極層と重畳し、これを介して保護ダイオードおよびゲート電極と接続する。ゲートパッド部の下方にトランジスタセルおよび1層目のソース電極層を配置する。これにより基板内を流れる電流の抵抗が小さくできる。
【選択図】図1
Description
2 n−型半導体層
4 チャネル層
7 トレンチ
10、10’ MOSFET
11 ゲート絶縁膜
13 ゲート電極
14 ボディ領域
15 ソース領域
16 層間絶縁膜
17 第1ソース電極層
18 第1ゲート電極層
20 素子領域
21 セル
23 第1絶縁膜(窒化膜)
24 UBM
25 第2絶縁膜
27 第2ソース電極層
28 第2ゲート電極層
28p ゲートパッド部
28w 配線部
28o 重畳領域
28u 非重畳領域
27p ソースパッド部
37 ソースバンプ電極
38 ゲートバンプ電極
200、210 MOSFET
217 第1ソース電極層
218 第1ゲート電極層
227 第2ソース電極層
227p ソースパッド部
228 第2ゲート電極層
228p ゲートパッド部
Claims (10)
- 半導体基板の一主面に対して水平方向に該半導体基板を電流が流れ、前記一主面側に外部接続手段の全てが設けられる絶縁ゲート型半導体装置であって、
前記半導体基板に設けられ絶縁ゲート型トランジスタのセルが複数配置された素子領域と、
前記半導体基板上に設けられて前記素子領域の一の部分と直接接触せず上方を覆い、該素子領域に接続する第1端子電極層と、
前記半導体基板上に設けられて前記素子領域の他の部分と直接接触せず上方を覆い、該素子領域に接続して制御信号を印加する第2端子電極層と、
前記素子領域外で該素子領域に隣接して配置された保護ダイオードと、を具備し、
前記第2端子電極層は、外部接続手段が固着するパッド部を有し、該パッド部は少なくとも一部が前記保護ダイオードと非重畳となり、
前記保護ダイオードが隣接して配置される前記素子領域の外周の延在方向は、前記半導体基板を流れる前記電流の方向に対して直交することを特徴とする絶縁ゲート型半導体装置。 - 前記半導体基板を共通のドレイン領域として2つの絶縁ゲート型半導体素子が集積化されることを特徴とする請求項1に記載の絶縁ゲート型半導体装置。
- 前記パッド部下方に前記セルが配置されることを特徴とする請求項2に記載の絶縁ゲート型半導体装置。
- 前記第1端子電極層下方に該第1端子電極層と接続する他の第1端子電極層が設けられ、前記第2端子電極層下方の前記素子領域外に該第2端子電極層および前記素子領域と接続する他の第2端子電極層が設けられることを特徴とする請求項3に記載の絶縁ゲート型半導体装置。
- 前記他の第2端子電極層下方で前記基板上に前記保護ダイオードが配置され、該保護ダイオードの一端は前記他の第1端子電極層に接続し、他端は前記素子領域のゲート電極に接続されることを特徴とする請求項4に記載の絶縁ゲート型半導体装置。
- 前記第2端子電極層は、前記パッド部から前記他の第2端子電極層まで延在する配線部を有し、該配線部が前記他の第2端子電極層に接続することを特徴とする請求項5に記載の絶縁ゲート型半導体装置。
- 前記パッド部が前記保護ダイオードと一部重畳して接続することを特徴とする請求項5に記載の絶縁ゲート型半導体装置。
- 前記配線部下方に前記セルが配置されることを特徴とする請求項6に記載の絶縁ゲート型半導体装置。
- 前記パッド部は前記保護ダイオードと重畳しない非重畳領域を有することを特徴とする請求項5に記載の絶縁ゲート型半導体装置。
- 前記非重畳領域下方に前記セルを配置することを特徴とする請求項9に記載の絶縁ゲート型半導体装置。
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JP2008253000A JP2010087126A (ja) | 2008-09-30 | 2008-09-30 | 絶縁ゲート型半導体装置 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013175840A1 (ja) * | 2012-05-25 | 2013-11-28 | 富士電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004014707A (ja) * | 2002-06-05 | 2004-01-15 | Renesas Technology Corp | 半導体装置 |
JP2004289103A (ja) * | 2002-06-13 | 2004-10-14 | Matsushita Electric Ind Co Ltd | 半導体デバイス及びその製造方法 |
JP2007042817A (ja) * | 2005-08-02 | 2007-02-15 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置およびその製造方法 |
JP2008109008A (ja) * | 2006-10-27 | 2008-05-08 | Sanyo Electric Co Ltd | 半導体装置 |
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2008
- 2008-09-30 JP JP2008253000A patent/JP2010087126A/ja not_active Ceased
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004014707A (ja) * | 2002-06-05 | 2004-01-15 | Renesas Technology Corp | 半導体装置 |
JP2004289103A (ja) * | 2002-06-13 | 2004-10-14 | Matsushita Electric Ind Co Ltd | 半導体デバイス及びその製造方法 |
JP2007042817A (ja) * | 2005-08-02 | 2007-02-15 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置およびその製造方法 |
JP2008109008A (ja) * | 2006-10-27 | 2008-05-08 | Sanyo Electric Co Ltd | 半導体装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013175840A1 (ja) * | 2012-05-25 | 2013-11-28 | 富士電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP2013247252A (ja) * | 2012-05-25 | 2013-12-09 | National Institute Of Advanced Industrial & Technology | 炭化珪素半導体装置およびその製造方法 |
US9673313B2 (en) | 2012-05-25 | 2017-06-06 | Fuji Electric Co., Ltd. | Silicon carbide semiconductor device and fabrication method thereof |
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