TW200707613A - Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membrane - Google Patents

Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membrane

Info

Publication number
TW200707613A
TW200707613A TW095115992A TW95115992A TW200707613A TW 200707613 A TW200707613 A TW 200707613A TW 095115992 A TW095115992 A TW 095115992A TW 95115992 A TW95115992 A TW 95115992A TW 200707613 A TW200707613 A TW 200707613A
Authority
TW
Taiwan
Prior art keywords
compound semiconductor
semiconductor member
gallium nitride
nitride compound
membrane
Prior art date
Application number
TW095115992A
Other languages
English (en)
Inventor
Akihiro Hachigo
Takayuki Nishiura
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of TW200707613A publication Critical patent/TW200707613A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6489—Photoluminescence of semiconductors

Landscapes

  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
TW095115992A 2005-06-06 2006-05-05 Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membrane TW200707613A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005165957A JP2006339605A (ja) 2005-06-06 2005-06-06 化合物半導体部材のダメージ評価方法、化合物半導体部材の製造方法、窒化ガリウム系化合物半導体部材及び窒化ガリウム系化合物半導体膜

Publications (1)

Publication Number Publication Date
TW200707613A true TW200707613A (en) 2007-02-16

Family

ID=36930361

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095115992A TW200707613A (en) 2005-06-06 2006-05-05 Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membrane

Country Status (6)

Country Link
US (2) US20060272573A1 (zh)
EP (1) EP1731897A3 (zh)
JP (1) JP2006339605A (zh)
KR (1) KR20060127752A (zh)
CN (1) CN1877805B (zh)
TW (1) TW200707613A (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006339605A (ja) * 2005-06-06 2006-12-14 Sumitomo Electric Ind Ltd 化合物半導体部材のダメージ評価方法、化合物半導体部材の製造方法、窒化ガリウム系化合物半導体部材及び窒化ガリウム系化合物半導体膜
KR101172364B1 (ko) * 2006-11-02 2012-08-08 삼성코닝정밀소재 주식회사 질화갈륨 단결정 기판 및 표면 가공방법
WO2009011394A1 (ja) * 2007-07-17 2009-01-22 Sumitomo Electric Industries, Ltd. 電子デバイスを作製する方法、エピタキシャル基板を作製する方法、iii族窒化物半導体素子及び窒化ガリウムエピタキシャル基板
JP4935591B2 (ja) * 2007-09-11 2012-05-23 住友電気工業株式会社 Ｉｉｉ族窒化物半導体光素子を作製する方法、およびフォトルミネッセンススペクトルを測定する方法
JP5575372B2 (ja) * 2008-03-04 2014-08-20 日立金属株式会社 窒化ガリウム基板
JP2011103400A (ja) * 2009-11-11 2011-05-26 Sumitomo Electric Ind Ltd 化合物半導体素子
JP5416650B2 (ja) * 2010-05-10 2014-02-12 日立金属株式会社 窒化ガリウム基板
JP2013010681A (ja) * 2011-05-31 2013-01-17 Hitachi Cable Ltd 窒化ガリウム基板、発光素子、電界効果トランジスタ及びエピタキシャル膜の製造方法
JP6204036B2 (ja) 2012-03-16 2017-09-27 株式会社神戸製鋼所 酸化物半導体薄膜の評価方法、及び酸化物半導体薄膜の品質管理方法
JP2014009155A (ja) * 2012-06-27 2014-01-20 Samsung Corning Precision Materials Co Ltd 窒化ガリウムの品質測定装置
JP6696729B2 (ja) * 2015-03-18 2020-05-20 株式会社Sumco 半導体基板の評価方法及び半導体基板の製造方法
CN111355118B (zh) * 2018-12-20 2021-07-20 中科芯电半导体科技（北京）有限公司 一种用于光致发光测试的vcsel结构外延材料结构及制备方法
JP7232074B2 (ja) * 2019-02-19 2023-03-02 住友化学株式会社 Ｉｉｉ族窒化物半導体装置およびエッチング装置
CN110544643B (zh) * 2019-09-11 2022-06-28 东方日升（常州）新能源有限公司 无损伤快速判断金属浆料烧穿深度的方法
WO2024042777A1 (ja) * 2022-08-26 2024-02-29 日本碍子株式会社 Ｉｉｉ族元素窒化物基板の検査方法、ｉｉｉ族元素窒化物基板の製造方法および半導体素子の製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5860550A (ja) * 1981-10-07 1983-04-11 Agency Of Ind Science & Technol エピタキシヤル・シリコン結晶中の不純物濃度測定法
JP2654454B2 (ja) * 1988-04-29 1997-09-17 豊田合成株式会社 半導体のドライエッチング方法
JPH031553A (ja) * 1989-05-30 1991-01-08 Hikari Gijutsu Kenkyu Kaihatsu Kk 半導体の測定方法及び測定装置
DE69230260T2 (de) * 1992-08-07 2000-07-13 Asahi Chemical Ind Halbleiteranordnung auf nitridbasis und verfahren zu ihrer herstellung
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
JP3124209B2 (ja) * 1994-06-30 2001-01-15 シャープ株式会社 化合物半導体結晶層の製造方法
JPH098356A (ja) * 1995-06-16 1997-01-10 Sumitomo Chem Co Ltd ３−５族化合物半導体用電極の製造方法
GB2306640B (en) * 1995-10-17 1998-01-14 Toshiba Cambridge Res Center Method of characterising a semiconductor material
JP2003133246A (ja) * 1996-01-19 2003-05-09 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子及び窒化ガリウム系化合物半導体の製造方法
JPH09246341A (ja) * 1996-03-12 1997-09-19 Nippon Steel Corp 半導体ウェーハの損傷評価用試料およびこの試料を用いた損傷評価方法
JP2001085737A (ja) * 1999-09-10 2001-03-30 Sharp Corp 窒化物半導体発光素子
US7189358B2 (en) * 2000-08-08 2007-03-13 California Institute Of Technology Integrated micropump analysis chip and method of making the same
US6579068B2 (en) * 2000-08-09 2003-06-17 California Institute Of Technology Method of manufacture of a suspended nitride membrane and a microperistaltic pump using the same
US6647796B2 (en) * 2000-08-11 2003-11-18 California Institue Of Technology Semiconductor nitride pressure microsensor and method of making and using the same
US6780239B2 (en) * 2000-10-19 2004-08-24 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
KR100632760B1 (ko) * 2001-03-21 2006-10-11 미츠비시 덴센 고교 가부시키가이샤 반도체 발광 소자
CN101420004B (zh) * 2002-02-15 2012-07-04 三菱化学株式会社 光发射器件及使用其的照明器
JP3878868B2 (ja) * 2002-03-01 2007-02-07 シャープ株式会社 ＧａＮ系レーザ素子
CN100353624C (zh) * 2002-03-08 2007-12-05 松下电器产业株式会社 半导体激光器和其制造方法
JP4206086B2 (ja) * 2004-08-03 2009-01-07 住友電気工業株式会社 窒化物半導体発光素子および窒化物半導体発光素子を製造する方法
JP2006339605A (ja) * 2005-06-06 2006-12-14 Sumitomo Electric Ind Ltd 化合物半導体部材のダメージ評価方法、化合物半導体部材の製造方法、窒化ガリウム系化合物半導体部材及び窒化ガリウム系化合物半導体膜

Also Published As

Publication number Publication date
US20060272573A1 (en) 2006-12-07
EP1731897A2 (en) 2006-12-13
KR20060127752A (ko) 2006-12-13
JP2006339605A (ja) 2006-12-14
US8177911B2 (en) 2012-05-15
CN1877805A (zh) 2006-12-13
CN1877805B (zh) 2010-04-21
US20080044338A1 (en) 2008-02-21
EP1731897A3 (en) 2009-07-22

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