GB2306640B - Method of characterising a semiconductor material - Google Patents
Method of characterising a semiconductor materialInfo
- Publication number
- GB2306640B GB2306640B GB9521226A GB9521226A GB2306640B GB 2306640 B GB2306640 B GB 2306640B GB 9521226 A GB9521226 A GB 9521226A GB 9521226 A GB9521226 A GB 9521226A GB 2306640 B GB2306640 B GB 2306640B
- Authority
- GB
- United Kingdom
- Prior art keywords
- characterising
- semiconductor material
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6489—Photoluminescence of semiconductors
Landscapes
- Health & Medical Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9521226A GB2306640B (en) | 1995-10-17 | 1995-10-17 | Method of characterising a semiconductor material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9521226A GB2306640B (en) | 1995-10-17 | 1995-10-17 | Method of characterising a semiconductor material |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9521226D0 GB9521226D0 (en) | 1995-12-20 |
GB2306640A GB2306640A (en) | 1997-05-07 |
GB2306640B true GB2306640B (en) | 1998-01-14 |
Family
ID=10782416
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9521226A Expired - Fee Related GB2306640B (en) | 1995-10-17 | 1995-10-17 | Method of characterising a semiconductor material |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2306640B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8218140B2 (en) | 2005-10-11 | 2012-07-10 | Bt Imaging Pty Limited | Method and system for inspecting indirect bandgap semiconductor stucture |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006339605A (en) | 2005-06-06 | 2006-12-14 | Sumitomo Electric Ind Ltd | Method of evaluating damage of compound semiconductor member, method of manufacturing compound semiconductor member, gallium nitride based compound semiconductor member and gallium nitride based compound semiconductor film |
CN102483378B (en) | 2009-07-20 | 2014-06-18 | Bt成像股份有限公司 | Separation of doping density and minority carrier lifetime in photoluminescence measurements on semiconductor materials |
JP6268039B2 (en) * | 2014-05-23 | 2018-01-24 | グローバルウェーハズ・ジャパン株式会社 | Calibration curve creation method, impurity concentration measurement method, and semiconductor wafer manufacturing method |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4492871A (en) * | 1981-10-07 | 1985-01-08 | Agency Of Industrial Science & Technology | Method for determining impurities in epitaxial silicon crystals |
-
1995
- 1995-10-17 GB GB9521226A patent/GB2306640B/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4492871A (en) * | 1981-10-07 | 1985-01-08 | Agency Of Industrial Science & Technology | Method for determining impurities in epitaxial silicon crystals |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8218140B2 (en) | 2005-10-11 | 2012-07-10 | Bt Imaging Pty Limited | Method and system for inspecting indirect bandgap semiconductor stucture |
US9234849B2 (en) | 2005-10-11 | 2016-01-12 | Bt Imaging Pty Limited | Method and system for inspecting indirect bandgap semiconductor structure |
US9909991B2 (en) | 2005-10-11 | 2018-03-06 | Bt Imaging Pty Limited | Method and system for inspecting indirect bandgap semiconductor structure |
Also Published As
Publication number | Publication date |
---|---|
GB9521226D0 (en) | 1995-12-20 |
GB2306640A (en) | 1997-05-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20101017 |