GB9521226D0 - Method of characterising a semiconductor material - Google Patents

Method of characterising a semiconductor material

Info

Publication number
GB9521226D0
GB9521226D0 GBGB9521226.2A GB9521226A GB9521226D0 GB 9521226 D0 GB9521226 D0 GB 9521226D0 GB 9521226 A GB9521226 A GB 9521226A GB 9521226 D0 GB9521226 D0 GB 9521226D0
Authority
GB
United Kingdom
Prior art keywords
characterising
semiconductor material
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9521226.2A
Other versions
GB2306640B (en
GB2306640A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Europe Ltd
Original Assignee
Toshiba Cambridge Research Centre Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Cambridge Research Centre Ltd filed Critical Toshiba Cambridge Research Centre Ltd
Priority to GB9521226A priority Critical patent/GB2306640B/en
Publication of GB9521226D0 publication Critical patent/GB9521226D0/en
Publication of GB2306640A publication Critical patent/GB2306640A/en
Application granted granted Critical
Publication of GB2306640B publication Critical patent/GB2306640B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6489—Photoluminescence of semiconductors
GB9521226A 1995-10-17 1995-10-17 Method of characterising a semiconductor material Expired - Fee Related GB2306640B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9521226A GB2306640B (en) 1995-10-17 1995-10-17 Method of characterising a semiconductor material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9521226A GB2306640B (en) 1995-10-17 1995-10-17 Method of characterising a semiconductor material

Publications (3)

Publication Number Publication Date
GB9521226D0 true GB9521226D0 (en) 1995-12-20
GB2306640A GB2306640A (en) 1997-05-07
GB2306640B GB2306640B (en) 1998-01-14

Family

ID=10782416

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9521226A Expired - Fee Related GB2306640B (en) 1995-10-17 1995-10-17 Method of characterising a semiconductor material

Country Status (1)

Country Link
GB (1) GB2306640B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006339605A (en) 2005-06-06 2006-12-14 Sumitomo Electric Ind Ltd Method of evaluating damage of compound semiconductor member, method of manufacturing compound semiconductor member, gallium nitride based compound semiconductor member and gallium nitride based compound semiconductor film
CN101365937B (en) 2005-10-11 2015-01-14 Bt成像股份有限公司 Method and system for inspecting indirect bandgap semiconductor structure
US8742372B2 (en) * 2009-07-20 2014-06-03 Bt Imaging Pty Ltd Separation of doping density and minority carrier lifetime in photoluminescence measurements on semiconductor materials
JP6268039B2 (en) * 2014-05-23 2018-01-24 グローバルウェーハズ・ジャパン株式会社 Calibration curve creation method, impurity concentration measurement method, and semiconductor wafer manufacturing method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5860550A (en) * 1981-10-07 1983-04-11 Agency Of Ind Science & Technol Measuring method for density of impurities in epitaxial silicon crystal

Also Published As

Publication number Publication date
GB2306640B (en) 1998-01-14
GB2306640A (en) 1997-05-07

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20101017