TW200635036A - Solid state imaging device and manufacturing method thereof - Google Patents

Solid state imaging device and manufacturing method thereof

Info

Publication number
TW200635036A
TW200635036A TW095110246A TW95110246A TW200635036A TW 200635036 A TW200635036 A TW 200635036A TW 095110246 A TW095110246 A TW 095110246A TW 95110246 A TW95110246 A TW 95110246A TW 200635036 A TW200635036 A TW 200635036A
Authority
TW
Taiwan
Prior art keywords
type semiconductor
semiconductor layer
disposed
layer
solid state
Prior art date
Application number
TW095110246A
Other languages
English (en)
Other versions
TWI304653B (zh
Inventor
Tetsuya Yamaguchi
Hiroshige Goto
Hirofumi Yamashita
Hisanori Ihara
Ikuko Inoue
Nagataka Tanaka
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200635036A publication Critical patent/TW200635036A/zh
Application granted granted Critical
Publication of TWI304653B publication Critical patent/TWI304653B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Element Separation (AREA)
TW095110246A 2005-03-31 2006-03-24 Solid state imaging device and manufacturing method thereof TW200635036A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005104896A JP4718875B2 (ja) 2005-03-31 2005-03-31 固体撮像素子

Publications (2)

Publication Number Publication Date
TW200635036A true TW200635036A (en) 2006-10-01
TWI304653B TWI304653B (zh) 2008-12-21

Family

ID=37069168

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095110246A TW200635036A (en) 2005-03-31 2006-03-24 Solid state imaging device and manufacturing method thereof

Country Status (4)

Country Link
US (1) US7554141B2 (zh)
JP (1) JP4718875B2 (zh)
CN (1) CN100490168C (zh)
TW (1) TW200635036A (zh)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003142674A (ja) * 2001-11-07 2003-05-16 Toshiba Corp Ｍｏｓ型固体撮像装置
JP4854216B2 (ja) * 2005-04-28 2012-01-18 キヤノン株式会社 撮像装置および撮像システム
JP4679340B2 (ja) 2005-11-11 2011-04-27 株式会社東芝 固体撮像装置
JP2008021875A (ja) 2006-07-13 2008-01-31 Toshiba Corp 固体撮像装置
JP4960058B2 (ja) * 2006-10-04 2012-06-27 株式会社東芝 増幅型固体撮像素子
JP2008103566A (ja) * 2006-10-19 2008-05-01 Toshiba Corp 固体撮像装置
JP5173496B2 (ja) * 2008-03-06 2013-04-03 キヤノン株式会社 撮像装置及び撮像システム
JP2010278303A (ja) 2009-05-29 2010-12-09 Toshiba Corp 固体撮像装置
JP4977181B2 (ja) * 2009-08-10 2012-07-18 株式会社東芝 固体撮像装置およびその製造方法
JP5132641B2 (ja) 2009-08-25 2013-01-30 株式会社東芝 固体撮像装置の製造方法
JP5723094B2 (ja) * 2009-12-11 2015-05-27 キヤノン株式会社 固体撮像装置およびカメラ
JP2011199037A (ja) * 2010-03-19 2011-10-06 Toshiba Corp 固体撮像装置、及びその製造方法
JP2012164768A (ja) * 2011-02-04 2012-08-30 Toshiba Corp 固体撮像装置
US8883544B2 (en) 2012-05-04 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming an image device
US10009552B2 (en) * 2012-09-20 2018-06-26 Semiconductor Components Industries, Llc Imaging systems with front side illuminated near infrared imaging pixels
US9876045B2 (en) * 2015-05-06 2018-01-23 Cista System Corp. Back side illuminated CMOS image sensor arrays
JP2017045873A (ja) * 2015-08-27 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
CN106783903B (zh) * 2016-12-28 2019-12-13 上海集成电路研发中心有限公司 防止划片造成短路的cmos图像传感器结构及制作方法
US11387232B2 (en) * 2017-03-23 2022-07-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
KR20190041678A (ko) * 2017-10-13 2019-04-23 삼성전자주식회사 반도체 칩 검사 장치
JP6978893B2 (ja) 2017-10-27 2021-12-08 キヤノン株式会社 光電変換装置、その製造方法及び機器
JP7097773B2 (ja) 2018-07-26 2022-07-08 キヤノン株式会社 固体撮像装置、基板および撮像システム

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02266566A (ja) * 1989-04-07 1990-10-31 Olympus Optical Co Ltd 固体撮像装置及びその製造方法
JP2557750B2 (ja) * 1991-02-27 1996-11-27 三洋電機株式会社 光半導体装置
JP3457551B2 (ja) * 1998-11-09 2003-10-20 株式会社東芝 固体撮像装置
JP4604296B2 (ja) * 1999-02-09 2011-01-05 ソニー株式会社 固体撮像装置及びその製造方法
JP3315962B2 (ja) 1999-12-01 2002-08-19 イノテック株式会社 固体撮像素子、その製造方法及び固体撮像装置
TW494574B (en) 1999-12-01 2002-07-11 Innotech Corp Solid state imaging device, method of manufacturing the same, and solid state imaging system
JP3664968B2 (ja) 1999-12-01 2005-06-29 イノテック株式会社 固体撮像素子、その製造方法及び固体撮像装置
JP4419238B2 (ja) * 1999-12-27 2010-02-24 ソニー株式会社 固体撮像素子及びその製造方法
US6504196B1 (en) 2001-08-30 2003-01-07 Micron Technology, Inc. CMOS imager and method of formation
US7091536B2 (en) 2002-11-14 2006-08-15 Micron Technology, Inc. Isolation process and structure for CMOS imagers
JP4794821B2 (ja) * 2004-02-19 2011-10-19 キヤノン株式会社 固体撮像装置および撮像システム
JP2004304198A (ja) * 2004-05-17 2004-10-28 Toshiba Corp 固体撮像装置
US7154137B2 (en) * 2004-10-12 2006-12-26 Omnivision Technologies, Inc. Image sensor and pixel having a non-convex photodiode

Also Published As

Publication number Publication date
JP2006286933A (ja) 2006-10-19
TWI304653B (zh) 2008-12-21
CN100490168C (zh) 2009-05-20
US7554141B2 (en) 2009-06-30
CN1855520A (zh) 2006-11-01
JP4718875B2 (ja) 2011-07-06
US20060219867A1 (en) 2006-10-05

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees