TW200633018A - Thin film semiconductor device, method of manufacturing the same, and display - Google Patents

Thin film semiconductor device, method of manufacturing the same, and display

Info

Publication number
TW200633018A
TW200633018A TW095104478A TW95104478A TW200633018A TW 200633018 A TW200633018 A TW 200633018A TW 095104478 A TW095104478 A TW 095104478A TW 95104478 A TW95104478 A TW 95104478A TW 200633018 A TW200633018 A TW 200633018A
Authority
TW
Taiwan
Prior art keywords
thin film
semiconductor thin
internal region
region
produced
Prior art date
Application number
TW095104478A
Other languages
English (en)
Chinese (zh)
Other versions
TWI296825B (enrdf_load_stackoverflow
Inventor
Akihiko Asano
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200633018A publication Critical patent/TW200633018A/zh
Application granted granted Critical
Publication of TWI296825B publication Critical patent/TWI296825B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0227—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using structural arrangements to control crystal growth, e.g. placement of grain filters

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
TW095104478A 2005-02-24 2006-02-10 Thin film semiconductor device, method of manufacturing the same, and display TW200633018A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005049716A JP2006237270A (ja) 2005-02-24 2005-02-24 薄膜半導体装置及びその製造方法と表示装置

Publications (2)

Publication Number Publication Date
TW200633018A true TW200633018A (en) 2006-09-16
TWI296825B TWI296825B (enrdf_load_stackoverflow) 2008-05-11

Family

ID=36911742

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095104478A TW200633018A (en) 2005-02-24 2006-02-10 Thin film semiconductor device, method of manufacturing the same, and display

Country Status (4)

Country Link
US (1) US20060186415A1 (enrdf_load_stackoverflow)
JP (1) JP2006237270A (enrdf_load_stackoverflow)
KR (1) KR20060094479A (enrdf_load_stackoverflow)
TW (1) TW200633018A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI880562B (zh) * 2023-12-29 2025-04-11 南韓商樂金顯示科技股份有限公司 顯示裝置

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007324425A (ja) * 2006-06-02 2007-12-13 Sony Corp 薄膜半導体装置及びその製造方法と表示装置
KR100785019B1 (ko) * 2006-06-09 2007-12-11 삼성전자주식회사 하부 게이트 박막 트랜지스터 및 그 제조방법
KR100785020B1 (ko) * 2006-06-09 2007-12-12 삼성전자주식회사 하부 게이트 박막 트랜지스터 및 그 제조방법
JP2008283069A (ja) * 2007-05-11 2008-11-20 Sony Corp 照射装置、半導体装置の製造装置、半導体装置の製造方法および表示装置の製造方法
JP5245287B2 (ja) * 2007-05-18 2013-07-24 ソニー株式会社 半導体装置の製造方法、薄膜トランジスタ基板の製造方法および表示装置の製造方法
KR100953657B1 (ko) * 2007-11-13 2010-04-20 삼성모바일디스플레이주식회사 박막트랜지스터 및 그 제조방법과 이를 구비하는유기전계발광표시장치
KR101015844B1 (ko) * 2008-06-19 2011-02-23 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법 및 그를 구비하는유기전계발광표시장치의 제조방법
KR101560398B1 (ko) 2008-12-08 2015-10-14 엘지디스플레이 주식회사 폴리실리콘 박막트랜지스터의 제조방법
JP5549913B2 (ja) * 2009-09-01 2014-07-16 株式会社リコー 電気機械変換素子の製造方法
JP5534402B2 (ja) * 2009-11-05 2014-07-02 株式会社ブイ・テクノロジー 低温ポリシリコン膜の形成装置及び方法
KR101094285B1 (ko) * 2009-12-04 2011-12-19 삼성모바일디스플레이주식회사 박막트랜지스터 및 이를 포함하는 표시장치
JP5601363B2 (ja) * 2012-11-19 2014-10-08 ソニー株式会社 半導体装置、薄膜トランジスタ基板および表示装置
JP6471379B2 (ja) * 2014-11-25 2019-02-20 株式会社ブイ・テクノロジー 薄膜トランジスタ、薄膜トランジスタの製造方法及びレーザアニール装置
JP2020004859A (ja) * 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
CN111092124A (zh) * 2018-10-23 2020-05-01 宸鸿光电科技股份有限公司 半导体装置及其制造方法
JP7154592B2 (ja) * 2019-01-29 2022-10-18 株式会社ブイ・テクノロジー レーザアニール方法およびレーザアニール装置
JP7203417B2 (ja) * 2019-01-31 2023-01-13 株式会社ブイ・テクノロジー レーザアニール方法、レーザアニール装置、およびｔｆｔ基板
CN109860057B (zh) * 2019-03-25 2021-12-14 合肥鑫晟光电科技有限公司 薄膜晶体管、阵列基板及其制作方法、显示装置
JP7616771B2 (ja) * 2021-04-06 2025-01-17 東京エレクトロン株式会社 アモルファスシリコン膜の結晶化方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3444053B2 (ja) * 1995-10-13 2003-09-08 ソニー株式会社 薄膜半導体装置
TW582062B (en) * 2001-09-14 2004-04-01 Sony Corp Laser irradiation apparatus and method of treating semiconductor thin film
KR100585873B1 (ko) * 2003-11-03 2006-06-07 엘지.필립스 엘시디 주식회사 폴리실리콘 액정표시소자 및 그 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI880562B (zh) * 2023-12-29 2025-04-11 南韓商樂金顯示科技股份有限公司 顯示裝置

Also Published As

Publication number Publication date
US20060186415A1 (en) 2006-08-24
TWI296825B (enrdf_load_stackoverflow) 2008-05-11
KR20060094479A (ko) 2006-08-29
JP2006237270A (ja) 2006-09-07

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MM4A Annulment or lapse of patent due to non-payment of fees