TW200623235A - A method for forming a semiconductor arrangement with gate sidewall spacers of specific dimensions - Google Patents

A method for forming a semiconductor arrangement with gate sidewall spacers of specific dimensions

Info

Publication number
TW200623235A
TW200623235A TW094141232A TW94141232A TW200623235A TW 200623235 A TW200623235 A TW 200623235A TW 094141232 A TW094141232 A TW 094141232A TW 94141232 A TW94141232 A TW 94141232A TW 200623235 A TW200623235 A TW 200623235A
Authority
TW
Taiwan
Prior art keywords
specific dimensions
forming
gate electrode
polysilicon gate
sidewall spacers
Prior art date
Application number
TW094141232A
Other languages
English (en)
Other versions
TWI397107B (zh
Inventor
Mark C Kelling
Douglas Bonser
Srikanteswara Dakshina-Murthy
Asuka Nomura
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of TW200623235A publication Critical patent/TW200623235A/zh
Application granted granted Critical
Publication of TWI397107B publication Critical patent/TWI397107B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
    • H01L21/28132—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects conducting part of electrode is difined by a sidewall spacer or a similar technique, e.g. oxidation under mask, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
    • H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW094141232A 2004-12-03 2005-11-24 形成具有特定尺寸之閘極側壁間隔件之半導體配置之方法 TWI397107B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/002,586 US7279386B2 (en) 2004-12-03 2004-12-03 Method for forming a semiconductor arrangement with gate sidewall spacers of specific dimensions

Publications (2)

Publication Number Publication Date
TW200623235A true TW200623235A (en) 2006-07-01
TWI397107B TWI397107B (zh) 2013-05-21

Family

ID=36218711

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094141232A TWI397107B (zh) 2004-12-03 2005-11-24 形成具有特定尺寸之閘極側壁間隔件之半導體配置之方法

Country Status (8)

Country Link
US (1) US7279386B2 (zh)
EP (1) EP1829092B1 (zh)
JP (1) JP2008522441A (zh)
KR (1) KR101142992B1 (zh)
CN (1) CN100459052C (zh)
DE (1) DE602005011483D1 (zh)
TW (1) TWI397107B (zh)
WO (1) WO2006060528A2 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7279386B2 (en) * 2004-12-03 2007-10-09 Advanced Micro Devices, Inc. Method for forming a semiconductor arrangement with gate sidewall spacers of specific dimensions
US7585735B2 (en) * 2005-02-01 2009-09-08 Freescale Semiconductor, Inc. Asymmetric spacers and asymmetric source/drain extension layers
US20110049582A1 (en) * 2009-09-03 2011-03-03 International Business Machines Corporation Asymmetric source and drain stressor regions
CN103928315B (zh) * 2014-04-28 2017-06-23 上海华力微电子有限公司 一种栅极侧墙减薄工艺
CN103943462A (zh) * 2014-04-28 2014-07-23 上海华力微电子有限公司 针对薄膜沉积产生负载效应的消除方法
US9941388B2 (en) 2014-06-19 2018-04-10 Globalfoundries Inc. Method and structure for protecting gates during epitaxial growth
US10566194B2 (en) * 2018-05-07 2020-02-18 Lam Research Corporation Selective deposition of etch-stop layer for enhanced patterning

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JP2685149B2 (ja) * 1988-04-11 1997-12-03 住友電気工業株式会社 電界効果トランジスタの製造方法
JPH08335554A (ja) * 1995-06-07 1996-12-17 Oki Electric Ind Co Ltd 半導体素子の製造方法
US5656518A (en) * 1996-09-13 1997-08-12 Advanced Micro Devices, Inc. Method for fabrication of a non-symmetrical transistor
JP3530692B2 (ja) * 1996-11-06 2004-05-24 キヤノン株式会社 走査型露光装置及びそれを用いたデバイスの製造方法
JP3598693B2 (ja) * 1996-12-03 2004-12-08 ソニー株式会社 半導体装置およびその製造方法
JPH10242460A (ja) * 1997-02-25 1998-09-11 Hitachi Ltd 半導体集積回路装置およびその製造方法
US5930634A (en) 1997-04-21 1999-07-27 Advanced Micro Devices, Inc. Method of making an IGFET with a multilevel gate
JP2000012844A (ja) * 1998-06-19 2000-01-14 Sony Corp 高耐圧半導体装置及びその製造方法
KR100284905B1 (ko) * 1998-10-16 2001-04-02 윤종용 반도체 장치의 콘택 형성 방법
JP2000260701A (ja) * 1999-03-10 2000-09-22 Toshiba Corp パターン形成方法及びそれを用いた半導体装置の製造方法
JP3381147B2 (ja) * 1999-04-16 2003-02-24 日本電気株式会社 半導体装置及びその製造方法
US6300208B1 (en) 2000-02-16 2001-10-09 Ultratech Stepper, Inc. Methods for annealing an integrated device using a radiant energy absorber layer
JP2001250756A (ja) * 2000-03-03 2001-09-14 Hitachi Ltd 半導体集積回路装置の製造方法
JP4776813B2 (ja) * 2001-06-12 2011-09-21 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
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JP3725841B2 (ja) * 2002-06-27 2005-12-14 株式会社東芝 電子ビーム露光の近接効果補正方法、露光方法、半導体装置の製造方法及び近接効果補正モジュール
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US7279386B2 (en) 2004-12-03 2007-10-09 Advanced Micro Devices, Inc. Method for forming a semiconductor arrangement with gate sidewall spacers of specific dimensions

Also Published As

Publication number Publication date
US7279386B2 (en) 2007-10-09
JP2008522441A (ja) 2008-06-26
CN101073143A (zh) 2007-11-14
TWI397107B (zh) 2013-05-21
EP1829092B1 (en) 2008-12-03
KR20070085551A (ko) 2007-08-27
DE602005011483D1 (de) 2009-01-15
KR101142992B1 (ko) 2012-05-15
WO2006060528A3 (en) 2006-10-26
WO2006060528A2 (en) 2006-06-08
CN100459052C (zh) 2009-02-04
US20060121711A1 (en) 2006-06-08
EP1829092A2 (en) 2007-09-05

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees