ATE441938T1 - Herstellungsverfahren für finfets mit verringertem widerstand - Google Patents
Herstellungsverfahren für finfets mit verringertem widerstandInfo
- Publication number
- ATE441938T1 ATE441938T1 AT06830385T AT06830385T ATE441938T1 AT E441938 T1 ATE441938 T1 AT E441938T1 AT 06830385 T AT06830385 T AT 06830385T AT 06830385 T AT06830385 T AT 06830385T AT E441938 T1 ATE441938 T1 AT E441938T1
- Authority
- AT
- Austria
- Prior art keywords
- finfets
- production process
- reduced resistance
- region
- finfet
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41791—Source or drain electrodes for field effect devices for transistors with a horizontal current flow in a vertical sidewall, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L2029/7858—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET having contacts specially adapted to the FinFET geometry, e.g. wrap-around contacts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/96—Porous semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/316,244 US7531423B2 (en) | 2005-12-22 | 2005-12-22 | Reduced-resistance finFETs by sidewall silicidation and methods of manufacturing the same |
PCT/EP2006/069339 WO2007071555A1 (en) | 2005-12-22 | 2006-12-05 | Reduced-resistance finfets and methods of manufacturing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE441938T1 true ATE441938T1 (de) | 2009-09-15 |
Family
ID=37771049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT06830385T ATE441938T1 (de) | 2005-12-22 | 2006-12-05 | Herstellungsverfahren für finfets mit verringertem widerstand |
Country Status (8)
Country | Link |
---|---|
US (2) | US7531423B2 (de) |
EP (1) | EP1964179B1 (de) |
JP (1) | JP4550146B2 (de) |
KR (1) | KR100992037B1 (de) |
CN (1) | CN101317273B (de) |
AT (1) | ATE441938T1 (de) |
DE (1) | DE602006008984D1 (de) |
WO (1) | WO2007071555A1 (de) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7479437B2 (en) * | 2006-04-28 | 2009-01-20 | International Business Machines Corporation | Method to reduce contact resistance on thin silicon-on-insulator device |
KR100864928B1 (ko) * | 2006-12-29 | 2008-10-22 | 동부일렉트로닉스 주식회사 | 모스펫 소자의 형성 방법 |
US20090001426A1 (en) * | 2007-06-29 | 2009-01-01 | Kangguo Cheng | Integrated Fin-Local Interconnect Structure |
US8063437B2 (en) * | 2007-07-27 | 2011-11-22 | Panasonic Corporation | Semiconductor device and method for producing the same |
US8004045B2 (en) * | 2007-07-27 | 2011-08-23 | Panasonic Corporation | Semiconductor device and method for producing the same |
US8021939B2 (en) * | 2007-12-12 | 2011-09-20 | International Business Machines Corporation | High-k dielectric and metal gate stack with minimal overlap with isolation region and related methods |
EP2311072B1 (de) | 2008-07-06 | 2013-09-04 | Imec | Verfahren zum dotieren von halbleiterstrukturen |
US20110001169A1 (en) * | 2009-07-01 | 2011-01-06 | International Business Machines Corporation | Forming uniform silicide on 3d structures |
US8653608B2 (en) * | 2009-10-27 | 2014-02-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET design with reduced current crowding |
US8278179B2 (en) | 2010-03-09 | 2012-10-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | LDD epitaxy for FinFETs |
US8716798B2 (en) | 2010-05-13 | 2014-05-06 | International Business Machines Corporation | Methodology for fabricating isotropically recessed source and drain regions of CMOS transistors |
US8431995B2 (en) * | 2010-05-13 | 2013-04-30 | International Business Machines Corporation | Methodology for fabricating isotropically recessed drain regions of CMOS transistors |
JP5837307B2 (ja) * | 2011-02-07 | 2015-12-24 | 公益財団法人神奈川科学技術アカデミー | 多孔性微粒子の製造方法 |
US8614134B2 (en) * | 2011-03-21 | 2013-12-24 | Globalfoundries Inc. | Shallow source and drain architecture in an active region of a semiconductor device having a pronounced surface topography by tilted implantation |
US10629900B2 (en) | 2011-05-04 | 2020-04-21 | Corning Incorporated | Porous silicon compositions and devices and methods thereof |
CN103137478A (zh) * | 2011-11-21 | 2013-06-05 | 中芯国际集成电路制造(上海)有限公司 | FinFET器件的制造方法及结构 |
US8637931B2 (en) | 2011-12-27 | 2014-01-28 | International Business Machines Corporation | finFET with merged fins and vertical silicide |
KR101894221B1 (ko) | 2012-03-21 | 2018-10-04 | 삼성전자주식회사 | 전계 효과 트랜지스터 및 이를 포함하는 반도체 장치 |
US8664072B2 (en) | 2012-05-30 | 2014-03-04 | Globalfoundries Inc. | Source and drain architecture in an active region of a P-channel transistor by tilted implantation |
WO2014009991A1 (ja) * | 2012-07-09 | 2014-01-16 | 国立大学法人東北大学 | 3次元構造のmosfet及びその製造方法 |
US8975125B2 (en) * | 2013-03-14 | 2015-03-10 | International Business Machines Corporation | Formation of bulk SiGe fin with dielectric isolation by anodization |
US8859379B2 (en) | 2013-03-15 | 2014-10-14 | International Business Machines Corporation | Stress enhanced finFET devices |
US8940602B2 (en) | 2013-04-11 | 2015-01-27 | International Business Machines Corporation | Self-aligned structure for bulk FinFET |
KR102083493B1 (ko) | 2013-08-02 | 2020-03-02 | 삼성전자 주식회사 | 반도체 소자의 제조방법 |
US9583590B2 (en) | 2013-09-27 | 2017-02-28 | Samsung Electronics Co., Ltd. | Integrated circuit devices including FinFETs and methods of forming the same |
US9711645B2 (en) * | 2013-12-26 | 2017-07-18 | International Business Machines Corporation | Method and structure for multigate FinFET device epi-extension junction control by hydrogen treatment |
US9391173B2 (en) * | 2014-04-22 | 2016-07-12 | International Business Machines Corporation | FinFET device with vertical silicide on recessed source/drain epitaxy regions |
CN105702729B (zh) * | 2014-11-27 | 2019-01-15 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
CN105702725B (zh) * | 2014-11-27 | 2018-12-11 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
US9741811B2 (en) | 2014-12-15 | 2017-08-22 | Samsung Electronics Co., Ltd. | Integrated circuit devices including source/drain extension regions and methods of forming the same |
US9666716B2 (en) | 2014-12-15 | 2017-05-30 | Sang U. Kim | FinFET transistor |
CN105789301B (zh) * | 2014-12-25 | 2018-09-11 | 中国科学院微电子研究所 | 鳍式场效应晶体管、鳍结构及其制造方法 |
US9837277B2 (en) | 2015-08-12 | 2017-12-05 | International Business Machines Corporation | Forming a contact for a tall fin transistor |
US9397197B1 (en) | 2015-09-23 | 2016-07-19 | International Business Machines Corporation | Forming wrap-around silicide contact on finFET |
US9484251B1 (en) * | 2015-10-30 | 2016-11-01 | Lam Research Corporation | Contact integration for reduced interface and series contact resistance |
EP3380436B1 (de) | 2015-11-25 | 2023-07-26 | Corning Incorporated | Poröse siliziumlegierungszusammensetzungen, verfahren zu ihrer herstellung und vorrichtungen davon |
CN107452792A (zh) * | 2016-06-01 | 2017-12-08 | 中芯国际集成电路制造(上海)有限公司 | 半导体装置及其制造方法 |
US9853127B1 (en) * | 2016-06-22 | 2017-12-26 | International Business Machines Corporation | Silicidation of bottom source/drain sheet using pinch-off sacrificial spacer process |
CN108155236B (zh) * | 2016-12-05 | 2020-08-07 | 上海新昇半导体科技有限公司 | 具有黑磷沟道层的低接触电阻率FinFET及其制备方法 |
US10707331B2 (en) * | 2017-04-28 | 2020-07-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET device with a reduced width |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
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US6297135B1 (en) | 1997-01-29 | 2001-10-02 | Ultratech Stepper, Inc. | Method for forming silicide regions on an integrated device |
JP3209164B2 (ja) * | 1997-10-07 | 2001-09-17 | 日本電気株式会社 | 半導体装置の製造方法 |
US6133124A (en) * | 1999-02-05 | 2000-10-17 | Advanced Micro Devices, Inc. | Device improvement by source to drain resistance lowering through undersilicidation |
US6255214B1 (en) | 1999-02-24 | 2001-07-03 | Advanced Micro Devices, Inc. | Method of forming junction-leakage free metal silicide in a semiconductor wafer by amorphization of source and drain regions |
CA2455565C (en) * | 2001-07-25 | 2007-11-06 | Philmac Pty Ltd | Coupling or transition fitting for the connection of metal or plastic pipes |
US7358121B2 (en) | 2002-08-23 | 2008-04-15 | Intel Corporation | Tri-gate devices and methods of fabrication |
US6864519B2 (en) | 2002-11-26 | 2005-03-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS SRAM cell configured using multiple-gate transistors |
US7105894B2 (en) * | 2003-02-27 | 2006-09-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Contacts to semiconductor fin devices |
KR100559572B1 (ko) * | 2003-09-01 | 2006-03-10 | 동부아남반도체 주식회사 | 살리사이드를 갖는 반도체 소자 제조 방법 |
US20050090067A1 (en) | 2003-10-27 | 2005-04-28 | Dharmesh Jawarani | Silicide formation for a semiconductor device |
KR100526889B1 (ko) * | 2004-02-10 | 2005-11-09 | 삼성전자주식회사 | 핀 트랜지스터 구조 |
KR20050108916A (ko) | 2004-05-14 | 2005-11-17 | 삼성전자주식회사 | 다마신 공정을 이용한 핀 전계 효과 트랜지스터의 형성 방법 |
JP3964885B2 (ja) | 2004-05-19 | 2007-08-22 | 株式会社東芝 | 半導体装置及びその製造方法 |
US7015126B2 (en) | 2004-06-03 | 2006-03-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming silicided gate structure |
JP2006012898A (ja) * | 2004-06-22 | 2006-01-12 | Toshiba Corp | 半導体装置及びその製造方法 |
-
2005
- 2005-12-22 US US11/316,244 patent/US7531423B2/en active Active
-
2006
- 2006-12-05 AT AT06830385T patent/ATE441938T1/de not_active IP Right Cessation
- 2006-12-05 JP JP2008546349A patent/JP4550146B2/ja active Active
- 2006-12-05 WO PCT/EP2006/069339 patent/WO2007071555A1/en active Application Filing
- 2006-12-05 KR KR1020087014763A patent/KR100992037B1/ko not_active IP Right Cessation
- 2006-12-05 EP EP06830385A patent/EP1964179B1/de active Active
- 2006-12-05 DE DE602006008984T patent/DE602006008984D1/de active Active
- 2006-12-05 CN CN2006800440556A patent/CN101317273B/zh active Active
-
2007
- 2007-10-31 US US11/933,392 patent/US20080054349A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US7531423B2 (en) | 2009-05-12 |
CN101317273A (zh) | 2008-12-03 |
JP2009521113A (ja) | 2009-05-28 |
KR100992037B1 (ko) | 2010-11-05 |
CN101317273B (zh) | 2012-08-22 |
EP1964179B1 (de) | 2009-09-02 |
EP1964179A1 (de) | 2008-09-03 |
WO2007071555A1 (en) | 2007-06-28 |
DE602006008984D1 (de) | 2009-10-15 |
JP4550146B2 (ja) | 2010-09-22 |
US20080054349A1 (en) | 2008-03-06 |
KR20080086458A (ko) | 2008-09-25 |
US20070148836A1 (en) | 2007-06-28 |
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