TW200614546A - - Google Patents

Info

Publication number
TW200614546A
TW200614546A TW94119960A TW94119960A TW200614546A TW 200614546 A TW200614546 A TW 200614546A TW 94119960 A TW94119960 A TW 94119960A TW 94119960 A TW94119960 A TW 94119960A TW 200614546 A TW200614546 A TW 200614546A
Authority
TW
Taiwan
Application number
TW94119960A
Other languages
Chinese (zh)
Other versions
TWI262611B (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of TW200614546A publication Critical patent/TW200614546A/zh
Application granted granted Critical
Publication of TWI262611B publication Critical patent/TWI262611B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
TW094119960A 2004-10-25 2005-06-16 Avalanche photo diode TWI262611B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2004/015794 WO2006046276A1 (ja) 2004-10-25 2004-10-25 アバランシェフォトダイオード

Publications (2)

Publication Number Publication Date
TW200614546A true TW200614546A (en:Method) 2006-05-01
TWI262611B TWI262611B (en) 2006-09-21

Family

ID=36227528

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094119960A TWI262611B (en) 2004-10-25 2005-06-16 Avalanche photo diode

Country Status (6)

Country Link
US (1) US9640703B2 (en:Method)
EP (1) EP1811578B1 (en:Method)
JP (1) JP4609430B2 (en:Method)
CN (1) CN100557826C (en:Method)
TW (1) TWI262611B (en:Method)
WO (1) WO2006046276A1 (en:Method)

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EP1811578B1 (en) * 2004-10-25 2016-12-21 Mitsubishi Denki Kabushiki Kaisha Avalanche photodiode
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JP4985298B2 (ja) * 2007-10-10 2012-07-25 三菱電機株式会社 アバランシェフォトダイオード
US7795064B2 (en) * 2007-11-14 2010-09-14 Jds Uniphase Corporation Front-illuminated avalanche photodiode
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JP5262293B2 (ja) * 2008-05-26 2013-08-14 三菱電機株式会社 光半導体装置
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US9299864B2 (en) * 2014-02-21 2016-03-29 Sifotonics Technologies Co., Ltd. Ge/Si avalanche photodiode with integrated heater and fabrication thereof
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JP2016062996A (ja) 2014-09-16 2016-04-25 株式会社東芝 光検出器
KR20170077241A (ko) 2014-11-13 2017-07-05 아티룩스 인코포레이티드 광 흡수 장치
US9799689B2 (en) 2014-11-13 2017-10-24 Artilux Inc. Light absorption apparatus
DE112016004224T5 (de) * 2015-09-17 2018-06-14 Sony Semiconductor Solutions Corp. Festkörperbildgebungsvorrichtung, elektronische Vorrichtung und Verfahren zum Herstellen der Festkörperbildgebungsvorrichtung
US20190157479A1 (en) * 2017-09-15 2019-05-23 Kabushiki Kaisha Toshiba Photodetection element, photodetector, photodetection system and laser imaging detection and ranging apparatus
JP6710343B2 (ja) * 2017-09-15 2020-06-17 三菱電機株式会社 半導体受光素子およびその製造方法
US20190088812A1 (en) * 2017-09-15 2019-03-21 Kabushiki Kaisha Toshiba Photodetection element, photodetector and laser imaging detection and ranging apparatus
KR102496483B1 (ko) * 2017-11-23 2023-02-06 삼성전자주식회사 아발란치 광검출기 및 이를 포함하는 이미지 센서
WO2019150536A1 (ja) * 2018-02-01 2019-08-08 株式会社京都セミコンダクター 半導体受光素子
US11862747B2 (en) * 2019-04-05 2024-01-02 Mitsubishi Electric Corporation Semiconductor light-receiving element and method of manufacturing semiconductor light-receiving element
JP7331732B2 (ja) * 2020-02-25 2023-08-23 三菱電機株式会社 アバランシェフォトダイオードの評価方法
CN112289883B (zh) * 2020-10-30 2023-03-28 华中科技大学 一种三维半导体雪崩光电探测芯片及其制备方法
CN120476686A (zh) * 2023-01-16 2025-08-12 三菱电机株式会社 背面入射型受光元件

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Also Published As

Publication number Publication date
JP4609430B2 (ja) 2011-01-12
EP1811578B1 (en) 2016-12-21
JPWO2006046276A1 (ja) 2008-05-22
WO2006046276A1 (ja) 2006-05-04
US9640703B2 (en) 2017-05-02
CN100557826C (zh) 2009-11-04
EP1811578A4 (en) 2009-07-15
CN101048878A (zh) 2007-10-03
TWI262611B (en) 2006-09-21
US20080121867A1 (en) 2008-05-29
EP1811578A1 (en) 2007-07-25

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