TW200609691A - Rinse solution for lithography - Google Patents

Rinse solution for lithography

Info

Publication number
TW200609691A
TW200609691A TW094112944A TW94112944A TW200609691A TW 200609691 A TW200609691 A TW 200609691A TW 094112944 A TW094112944 A TW 094112944A TW 94112944 A TW94112944 A TW 94112944A TW 200609691 A TW200609691 A TW 200609691A
Authority
TW
Taiwan
Prior art keywords
rinse solution
lithography
pattern
photoresist
providing
Prior art date
Application number
TW094112944A
Other languages
English (en)
Other versions
TWI314253B (en
Inventor
Jun Koshiyama
Kazumasa Wakiya
Fumitake Kaneko
Atsushi Miyamoto
Yoshihiro Sawada
Hidekazu Tajima
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200609691A publication Critical patent/TW200609691A/zh
Application granted granted Critical
Publication of TWI314253B publication Critical patent/TWI314253B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW094112944A 2004-04-23 2005-04-22 Rinse solution for lithography TWI314253B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004129095 2004-04-23
JP2004254939 2004-09-01
JP2004349197 2004-12-01

Publications (2)

Publication Number Publication Date
TW200609691A true TW200609691A (en) 2006-03-16
TWI314253B TWI314253B (en) 2009-09-01

Family

ID=35197135

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094112944A TWI314253B (en) 2004-04-23 2005-04-22 Rinse solution for lithography

Country Status (7)

Country Link
US (1) US20070218412A1 (zh)
EP (1) EP1752828A4 (zh)
JP (1) JP4864698B2 (zh)
KR (1) KR100857336B1 (zh)
CN (2) CN1947067B (zh)
TW (1) TWI314253B (zh)
WO (1) WO2005103830A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI474135B (zh) * 2008-11-26 2015-02-21 Tokyo Ohka Kogyo Co Ltd Photoresist surface modification liquid and the use of this photoresist surface modification of the photoresist pattern formation method

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4564489B2 (ja) * 2004-04-23 2010-10-20 東京応化工業株式会社 レジストパターン形成方法及びリンス液セット
JP2008102343A (ja) * 2006-10-19 2008-05-01 Az Electronic Materials Kk 現像済みレジスト基板処理液とそれを用いたレジスト基板の処理方法
JP5000260B2 (ja) * 2006-10-19 2012-08-15 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細化されたパターンの形成方法およびそれに用いるレジスト基板処理液
JP5422146B2 (ja) * 2008-03-25 2014-02-19 富士フイルム株式会社 平版印刷版作成用処理液および平版印刷版原版の処理方法
JP5591623B2 (ja) * 2010-08-13 2014-09-17 ＡｚエレクトロニックマテリアルズＩｐ株式会社 リソグラフィー用リンス液およびそれを用いたパターン形成方法
US8470515B2 (en) * 2011-09-15 2013-06-25 Nanya Technology Corp. Method of forming an etch mask
CN104871289B (zh) 2012-12-14 2017-10-10 巴斯夫欧洲公司 包含表面活性剂和疏水化剂的组合物在处理线间距尺寸为50nm或更低的图案化材料时避免图案崩塌的用途
KR101819992B1 (ko) * 2016-06-24 2018-01-18 영창케미칼 주식회사 포토레지스트 패턴 축소 조성물과 패턴 축소 방법
TWI833688B (zh) * 2016-12-19 2024-03-01 日商東京威力科創股份有限公司 顯像處理方法、電腦記憶媒體及顯像處理裝置

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05170845A (ja) * 1991-12-20 1993-07-09 Nippon Paint Co Ltd 有機ポリマー微粒子およびその製法
US5326672A (en) * 1992-04-23 1994-07-05 Sortec Corporation Resist patterns and method of forming resist patterns
JPH06105683B2 (ja) * 1992-04-23 1994-12-21 株式会社ソルテック レジストパターン形成方法
JPH07142349A (ja) * 1993-11-16 1995-06-02 Mitsubishi Electric Corp 現像工程におけるフォトレジストパターンの倒れを防止する方法
JPH07335519A (ja) * 1994-06-03 1995-12-22 Hitachi Ltd パタン形成方法
US5534396A (en) * 1994-11-09 1996-07-09 Eastman Kodak Company Rinse composition for photographic paper containing alkyl ether sulfate and biocide, and method of use
DE4440801A1 (de) * 1994-11-17 1996-05-23 Basf Ag Verfahren zur Herstellung von Aldehyden
JPH09120159A (ja) * 1995-10-24 1997-05-06 Tokyo Ohka Kogyo Co Ltd 水溶性感光性樹脂組成物およびこれを用いたブラックマトリックスパターンの形成方法
DE19701018A1 (de) * 1997-01-14 1998-10-15 Basf Ag Wäßrige Zubereitungen und ihre Verwendung
US5952158A (en) * 1998-02-04 1999-09-14 Eastman Kodak Company Photographic final rinse processing solution and method of use
JP3936058B2 (ja) * 1998-03-12 2007-06-27 株式会社メニコン コンタクトレンズ用液剤
JP4027494B2 (ja) * 1998-04-07 2007-12-26 花王株式会社 リンス剤組成物
US7521405B2 (en) * 2002-08-12 2009-04-21 Air Products And Chemicals, Inc. Process solutions containing surfactants
JP2001023893A (ja) 1999-07-12 2001-01-26 Nec Corp フォトレジストパターンの形成方法
JP3868686B2 (ja) 1999-12-03 2007-01-17 東京応化工業株式会社 ディフェクトの発生を抑えたホトレジストパターンの形成方法およびディフェクト低減用現像液
US7264678B2 (en) * 2000-06-14 2007-09-04 The Procter & Gamble Company Process for cleaning a surface
US20020028288A1 (en) * 2000-06-14 2002-03-07 The Procter & Gamble Company Long lasting coatings for modifying hard surfaces and processes for applying the same
US6576394B1 (en) * 2000-06-16 2003-06-10 Clariant Finance (Bvi) Limited Negative-acting chemically amplified photoresist composition
JP4694686B2 (ja) * 2000-08-31 2011-06-08 東京応化工業株式会社 半導体素子製造方法
US6451510B1 (en) * 2001-02-21 2002-09-17 International Business Machines Corporation Developer/rinse formulation to prevent image collapse in resist
JP2002323774A (ja) 2001-04-25 2002-11-08 Tokyo Ohka Kogyo Co Ltd 化学増幅型レジストパターンディフェクト低減用処理剤及びそれを用いるレジストパターン形成方法
TWI256971B (en) * 2002-08-09 2006-06-21 Hitachi Chemical Co Ltd CMP abrasive and method for polishing substrate
JP2004093832A (ja) * 2002-08-30 2004-03-25 Renesas Technology Corp 微細パターン形成材料、微細パターン形成方法および半導体装置の製造方法
JP4045180B2 (ja) * 2002-12-03 2008-02-13 Ａｚエレクトロニックマテリアルズ株式会社 リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法
JP3895269B2 (ja) * 2002-12-09 2007-03-22 富士通株式会社 レジストパターンの形成方法並びに半導体装置及びその製造方法
DE10345797A1 (de) * 2003-09-30 2005-04-14 Basf Ag Verfahren zur Vorbehandlung von zellulosehaltigem Textil
JP2006011054A (ja) * 2004-06-25 2006-01-12 Shin Etsu Chem Co Ltd リンス液及びこれを用いたレジストパターン形成方法
US20070004849A1 (en) * 2004-09-24 2007-01-04 Karl Siemensmeyer Method for the preliminary treatment of cellulose-containing textile

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI474135B (zh) * 2008-11-26 2015-02-21 Tokyo Ohka Kogyo Co Ltd Photoresist surface modification liquid and the use of this photoresist surface modification of the photoresist pattern formation method

Also Published As

Publication number Publication date
WO2005103830A1 (ja) 2005-11-03
CN102591160A (zh) 2012-07-18
CN1947067B (zh) 2012-05-30
EP1752828A1 (en) 2007-02-14
EP1752828A4 (en) 2010-04-21
TWI314253B (en) 2009-09-01
JPWO2005103830A1 (ja) 2008-03-13
US20070218412A1 (en) 2007-09-20
CN1947067A (zh) 2007-04-11
KR20070004111A (ko) 2007-01-05
KR100857336B1 (ko) 2008-09-05
CN102591160B (zh) 2014-02-26
JP4864698B2 (ja) 2012-02-01

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