TW200539740A - Manufacturing device of in-line type organic electroluminescent element - Google Patents

Manufacturing device of in-line type organic electroluminescent element Download PDF

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Publication number
TW200539740A
TW200539740A TW094106283A TW94106283A TW200539740A TW 200539740 A TW200539740 A TW 200539740A TW 094106283 A TW094106283 A TW 094106283A TW 94106283 A TW94106283 A TW 94106283A TW 200539740 A TW200539740 A TW 200539740A
Authority
TW
Taiwan
Prior art keywords
substrate
aforementioned
holding mechanism
vacuum
processing chambers
Prior art date
Application number
TW094106283A
Other languages
English (en)
Chinese (zh)
Other versions
TWI311895B (https=
Inventor
Susumu Kamikawa
Hirohiko Morisaki
Kozo Wada
Takashi Yoshitake
Masahiko Gohda
Etsuro Hirai
Toshiro Kobayashi
Mitsuo Kato
Tatsuya Hirano
Original Assignee
Mitsubishi Hitachi Metals
Mitsubishi Heavy Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Hitachi Metals, Mitsubishi Heavy Ind Ltd filed Critical Mitsubishi Hitachi Metals
Publication of TW200539740A publication Critical patent/TW200539740A/zh
Application granted granted Critical
Publication of TWI311895B publication Critical patent/TWI311895B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
TW094106283A 2004-03-30 2005-03-02 Manufacturing device of in-line type organic electroluminescent element TW200539740A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004098403A JP2005285576A (ja) 2004-03-30 2004-03-30 インライン式有機エレクトロルミネセンス製造装置

Publications (2)

Publication Number Publication Date
TW200539740A true TW200539740A (en) 2005-12-01
TWI311895B TWI311895B (https=) 2009-07-01

Family

ID=35049405

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094106283A TW200539740A (en) 2004-03-30 2005-03-02 Manufacturing device of in-line type organic electroluminescent element

Country Status (4)

Country Link
JP (1) JP2005285576A (https=)
KR (1) KR100692170B1 (https=)
CN (1) CN100482850C (https=)
TW (1) TW200539740A (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007149482A (ja) * 2005-11-28 2007-06-14 Konica Minolta Holdings Inc 有機ｅｌ素子の製造方法
KR101200593B1 (ko) * 2006-02-17 2012-11-12 황창훈 유기소자 양산용 증착용 기판 이송용 롤러장치
JP2007328999A (ja) * 2006-06-07 2007-12-20 Tokyo Electron Ltd 発光素子の製造装置および発光素子の製造方法
JP5051870B2 (ja) * 2006-06-14 2012-10-17 東京エレクトロン株式会社 発光素子の製造装置および発光素子の製造方法
JP5051869B2 (ja) 2006-06-14 2012-10-17 東京エレクトロン株式会社 発光素子および発光素子の製造方法
JP5280667B2 (ja) * 2007-11-08 2013-09-04 株式会社ジャパンディスプレイ 有機ｅｌ表示装置の製造方法及び蒸着マスクのクリーニング方法
JP5185678B2 (ja) * 2008-03-31 2013-04-17 芝浦メカトロニクス株式会社 スパッタリング装置及び方法
CN102598863B (zh) * 2009-11-19 2015-07-29 株式会社尼康 引导部件、基板、基板筒、基板处理装置、引导部件连接方法、显示元件的制造方法及显示元件的制造装置
JP2011127190A (ja) * 2009-12-18 2011-06-30 Showa Denko Kk インライン式成膜装置、磁気記録媒体の製造方法、及びゲートバルブ
TWI398533B (zh) * 2009-12-29 2013-06-11 Au Optronics Corp 蔭罩及其製作方法
JP5602483B2 (ja) * 2010-04-23 2014-10-08 パナソニック株式会社 発光モジュール及びそのモジュールを用いた照明器具
WO2013096951A1 (en) * 2011-12-23 2013-06-27 Solexel, Inc. High productivity spray processing for semiconductor metallization and interconnects
JP2013159841A (ja) * 2012-02-08 2013-08-19 Tokyo Electron Ltd 成膜装置
JP6196078B2 (ja) * 2012-10-18 2017-09-13 株式会社アルバック 成膜装置
KR101341850B1 (ko) * 2012-10-24 2013-12-16 주식회사 선익시스템 유기 증착 마스크의 플라즈마 건식세정을 위한 시스템
JP5968770B2 (ja) * 2012-11-30 2016-08-10 長州産業株式会社 真空成膜装置
JP6814998B1 (ja) * 2019-12-25 2021-01-20 株式会社プラズマイオンアシスト プラズマ処理装置
KR20210083082A (ko) * 2019-12-26 2021-07-06 캐논 톡키 가부시키가이샤 성막 시스템 및 성막 방법
US20240057462A1 (en) * 2020-12-25 2024-02-15 Semiconductor Energy Laboratory Co., Ltd. Manufacturing equipment of display device
CN114765103B (zh) * 2021-01-12 2025-07-25 等离子体成膜有限公司 等离子体处理装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06173002A (ja) * 1992-02-26 1994-06-21 Nkk Corp イオンプレ−ティング装置
JP2001007507A (ja) * 1999-06-25 2001-01-12 Fujitsu Ltd リフロー装置
JP3683788B2 (ja) * 1999-08-11 2005-08-17 東京エレクトロン株式会社 加熱処理装置の冷却方法及び加熱処理装置
JP4343480B2 (ja) * 2001-02-08 2009-10-14 株式会社半導体エネルギー研究所 成膜装置及び発光装置の作製方法
JP4704605B2 (ja) * 2001-05-23 2011-06-15 淳二 城戸 連続蒸着装置、蒸着装置及び蒸着方法
JP2003171763A (ja) * 2001-12-07 2003-06-20 Sony Corp インライン式真空成膜装置およびその冷却制御方法
JP2003309167A (ja) * 2002-04-16 2003-10-31 Canon Inc 基板保持装置
US20030221620A1 (en) * 2002-06-03 2003-12-04 Semiconductor Energy Laboratory Co., Ltd. Vapor deposition device
JP2005281784A (ja) * 2004-03-30 2005-10-13 Mitsubishi-Hitachi Metals Machinery Inc 基板の冷却構造

Also Published As

Publication number Publication date
CN1676659A (zh) 2005-10-05
CN100482850C (zh) 2009-04-29
KR100692170B1 (ko) 2007-03-12
KR20060043861A (ko) 2006-05-15
JP2005285576A (ja) 2005-10-13
TWI311895B (https=) 2009-07-01

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