WO2018144107A1 - Apparatus and method for continuous evaporation having substrates side by side - Google Patents

Apparatus and method for continuous evaporation having substrates side by side Download PDF

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Publication number
WO2018144107A1
WO2018144107A1 PCT/US2017/063304 US2017063304W WO2018144107A1 WO 2018144107 A1 WO2018144107 A1 WO 2018144107A1 US 2017063304 W US2017063304 W US 2017063304W WO 2018144107 A1 WO2018144107 A1 WO 2018144107A1
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WO
WIPO (PCT)
Prior art keywords
deposition
substrate
chamber
substrates
area
Prior art date
Application number
PCT/US2017/063304
Other languages
French (fr)
Inventor
Shinichi Kurita
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to CN201780009344.0A priority Critical patent/CN108701775A/en
Priority to JP2018531486A priority patent/JP2019510129A/en
Priority to KR1020187018911A priority patent/KR20180100563A/en
Publication of WO2018144107A1 publication Critical patent/WO2018144107A1/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • Embodiments of the present disclosure relate to deposition of source material on two substrates, particularly deposition of source material on two substrates arranged next to each other, side by side, with a scanning source, i.e. a moving source.
  • Embodiments of the present disclosure particularly relate to a deposition apparatus for depositing evaporated source material on two or more substrates, and a method of depositing evaporated source material on two or more substrates.
  • OLEDs are a special type of light-emitting diodes in which the emissive layer comprises a thin-film of certain organic compounds.
  • Organic light emitting diodes (OLEDs) are used in the manufacture of television screens, computer monitors, mobile phones, other hand-held devices, etc. for displaying information. OLEDs can also be used for general space illumination. The range of colors, brightness, and viewing angles possible with OLED displays is greater than that of traditional LCD displays because OLED pixels directly emit light. Therefore, the energy consumption of OLED displays is considerably less than that of traditional LCD displays. Further, the fact that OLEDs can be manufactured onto flexible substrates results in further applications.
  • a typical OLED display for example, may include layers of organic material situated between two electrodes that are all deposited on a substrate in such a manner as to form a matrix display panel having individually energizable pixels.
  • Deposition throughput, and deposition system size, and, thus, footprint, for forming film layers onto a substrate can be enhanced by using the same source to deposit the film layer on different substrates in the same chamber.
  • Such systems may use a scanning evaporation which scans across a first substrate to deposit a film layer on the substrate, and then rotates 1 80 degrees and scans across a second substrate in the chamber to form a film layer on the substrate.
  • the difficulty in controlling the source position in the chamber, and the mechanisms for scanning movement of the source are further complicated by the need to rotate the source.
  • a deposition apparatus for depositing evaporated source material on two or more substrates.
  • the deposition apparatus includes a vacuum chamber; a substrate support assembly providing a first deposition area for a first substrate of the two or more substrates and a second deposition area for 5 a second substrate of the two or more substrates, and wherein the first deposition area and the second deposition area are arranged side by side; and a deposition source assembly for evaporating source material configured to move along a first direction to sequentially deposit at the first deposition area and the second deposition area and along a second direction opposite to the first direction tp sequentially deposit at the second deposition area and the first deposition area.
  • a deposition apparatus for depositing evaporated source material on two or more substrates.
  • the deposition apparatus includes a vacuum chamber; a substrate support assembly providing a first deposition area for a first substrate of the two or more substrates and a second deposition area for a second substrate of the two or more substrates, and wherein the first deposition area and the second deposition area are arranged side by side in a substrate support plane; and a deposition source assembly for evaporating source material configured to move along a first direction back and forth to sequentially pass along the first deposition area and the second deposition area.
  • a deposition system for depositing evaporated source material on two or more substrates is provided.
  • the deposition system includes a deposition apparatus according to any of the embodiments, examples and. implementations described herein.
  • the deposition system further includes a mask storage chamber and one or more support tracks configured to move a mask carrier from the mask storage chamber to the deposition apparatus.
  • a deposition system for depositing evaporated source material on two or more substrates.
  • the deposition system includes two or more deposition apparatuses according to any of the embodiments, examples and implementations described herein, wherein each of the deposition apparatuses have a substrate support track, a carrier support track and a transfer track, and wherein the substrate support tracks, the carrier support tracks and the transfer tracks of adjacent deposition apparatuses of the two or more deposition apparatuses are arranged in a line.
  • the deposition system further includes, a maintenance chamber coupled to at least one vacuum chamber and having a further linear guiding element for moving the deposition source assembly from the linear guiding element to the further linear guiding element.
  • FIGS. 1 A to ID show a deposition apparatus according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates;
  • FIG. 2 shows a deposition source assembly for use in deposition apparatuses and methods of deposition according to embodiments described herein
  • FIG. 3 shows a deposition source assembly and a moving mechanism for the deposition source assembly for use in deposition apparatuses and methods of depositing according to embodiments described herein;
  • FIG. 4 shows a deposition apparatus according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates
  • FIG. 5 shows a deposition apparatus according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates
  • FIG. 6A shows a deposition apparatus according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates
  • FIG. 6B shows a deposition system according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates and has two or more deposition apparatuses;
  • FIG. 6C shows a deposition apparatus according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates
  • FIG. 6D shows a deposition apparatus according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates
  • FIG. 7A shows a deposition system according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates and has two or more deposition apparatuses;
  • FIG. 7B shows a deposition system according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates and has two or more deposition systems;
  • FIGS. 8A to 8H show a deposition apparatus according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates and illustrate a sequence of operating thereof;
  • FIG. 9 shows a deposition apparatus according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates
  • FIGS. 1 OA to 1 OH show a deposition apparatus according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates and illustrate a sequence of operating thereof;
  • FIG. 1 1 shows a deposition system according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates and has two or more deposition systems;
  • FIG. 12 shows a deposition system according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates and has two or more deposition systems.
  • Embodiments described herein particularly relate to deposition of organic materials, e.g. for OLED display manufacturing, e.g. on large area substrates.
  • large area substrates or carriers supporting one or more substrates i.e. large area carriers, may have a size of at least 0.174 m 2 .
  • the size of the carrier can be about 1.4 m 2 to about 8 m 2 , more typically about 2 m 2 to about 9 m 2 or even up to 12 m 2 .
  • the rectangular area in which the substrates are supported, for which the holding arrangements, apparatuses, and methods according to embodiments described herein are provided are carriers having sizes for large area substrates as described herein.
  • a large area carrier which would correspond to an area of a single large area substrate, can be GEN 5, which corresponds to about 1.4 m 2 substrates (1.1 m x 1 .3 m), GEN 7.5, which corresponds to about 4.29 m 2 substrates ( 1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7m 2 substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m 2 substrates (2.85 m ⁇ 3.05 m). Even larger generations such as GEN 1 1 and GEN 12 and corresponding substrate areas can similarly be implemented. Half sizes of the Gen generations may also be provided for OLED display manufacturing.
  • the substrate thickness can be from 0.1 to 1.8 mm and the holding arrangement, and particularly the holding devices, can be adapted for such substrate thicknesses.
  • the substrate thickness can be about 0.9 mm or below, such as 0.5 mm or 0.3 mm, and the holding arrangement, and particularly the holding devices, are adapted for such substrate thicknesses.
  • substrate as used herein may particularly embrace substantially inflexible substrates, e.g., a wafer, slices of transparent crystal such as sapphire or the like, or a glass plate.
  • substrate may also embrace flexible substrates such as a web or a foil.
  • substantially inflexible is understood to distinguish over “flexible”.
  • a substantially inflexible substrate can have a certain degree of flexibility, e.g. a glass plate having a thickness of 0.9 mm or below, such as 0.5 mm or below, wherein the flexibility of the substantially inflexible substrate is small in comparison to the flexible substrates.
  • the substrate may be made of any material suitable for material deposition.
  • the substrate may be made of a materia] selected from the group consisting of glass (for instance soda-lime glass, borosilicate glass etc.), metal, polymer, ceramic, compound materials, carbon fiber materials or any other material or combination of materials which can be coated by a deposition process.
  • FIGS. 1 A to I D show an apparatus for depositing evaporated material, i.e. evaporated source material on two or more substrates.
  • the apparatus includes a vacuum chamber 1 10.
  • the vacuum chamber can also be considered a processing chamber or a deposition chamber.
  • a substrate support assembly provides a first position 1 12 for a first substrate corresponding to a first deposition area and a second position 1 14 for a second substrate corresponding to a second deposition area.
  • the first deposition area and the second deposition area are arranged side by side.
  • the substrate support assembly can have a first portion providing a first substrate position and a second portion, e.g. a separate second portion, providing the second substrate position.
  • the substrate support assembly may be a common support assembly providing the first and the second substrate position. According to some embodiments, which can be combined with other embodiments described herein, the substrate support assembly can further be configured to transport the substrate.
  • the first substrate 132 and the second substrate 134 can be arranged in one plane, i.e. a substrate support plane. There may be a slight offset between a first substrate and a second substrate, e.g. of a few millimeters or a few centimeters. A potentially existing offset is beneficially minimized to increase uniformity of material deposition between substrates.
  • An arrangement of the first deposition area and the second deposition area side by side refers to an arrangement, wherein edges of the substrates or edges of respective carriers supporting the substrates face each other. The surfaces of the substrates are arranged essentially in one plane.
  • the apparatus shown in FIGS. 1A to I D further includes a deposition source assembly 120.
  • the deposition source assembly 120 is movably supported on a linear guiding element 122.
  • the deposition source assembly is movable back and forth along the linear guiding element, particularly between two endpoints of the linear guiding element. Accordingly, the deposition source assembly is moved back and forth within a source plane, e.g. one single source plane.
  • the deposition source assembly 120 can be moved along a first direction indicated by arrow 123 in FIG. 1A and a second direction opposite to the first direction indicated by arrow 123 in FIG. I B.
  • the deposition source assembly includes one or more crucibles 126 and one or more distribution assemblies 124.
  • the distribution assembly 124 provides a linear source.
  • the distribution assembly 124 can have a plurality of openings or nozzles extending in one direction to provide a line of evaporated source material while moving along the linear guiding element 122.
  • Embodiments described herein can be beneficially utilized with vertical substrate orientation and vertical orientation of the line source provided by the deposition source assembly. That is the deposition source assembly can provide a linear deposition source having a source extension direction, e.g. configured to provide a line of deposition material. Accordingly, FIGS.
  • the substrate support plane can be defined by the surface of the first substrate 132 and/or the second substrate 134.
  • the source plane can be defined by the extension of the distribution assembly 124 and the movement of the deposition source assembly 120 along a first direction as indicated by arrow 123.
  • Reference to a vertical orientation as described herein may allow for a slight deviation from the direction of gravity.
  • a vertical orientation is essentially vertical and distinguishes over a horizontal substrate orientation.
  • a substrate in a first deposition area, a substrate in the second deposition area and the length of the distribution pipe, for example the length of the line source may be essentially parallel to the direction of gravity. Essentially parallel is to be understood as having an angle of -20° to 20°, such as -15° to 15°.
  • the substrates are essentially vertically orientated (essentially -20° ⁇ substrate orientation ⁇ +20° deviating from vertical).
  • the deviation from an exact vertical orientation is such that the substrate surface to be deposited evaporated material faces downward. The substrate surface to be deposited facing downward allows for reduced particle generation on the surface to be deposited.
  • the crucible 126 can be provided below the distribution assembly 124 such that the source material evaporated in the crucible is guided from the crucible to the distribution assembly, particularly the source material evaporated in the crucible is guided directly from the crucible to the distribution assembly.
  • the deposition source assembly 120 further includes a support 128 for the crucible and the distribution assembly.
  • the support 128 may further include a driving unit for driving the deposition source assembly 120 along the linear guiding element 122.
  • the crucible and the distribution assembly is stationary with respect to the support 128.
  • the crucible and the distribution assembly is not rotated in an opposite direction (e.g. downwardly in FIGS. 1A to I D) with respect to the support 128.
  • the support 128 is not rotated during operation. Maintaining one direction of material deposition onto the substrates can result in a less complex design of the deposition source assembly 120. Since the performance of the deposition source assembly mainly determines the result of the layer deposited onto the substrates, an easier design of the deposition source assembly allows for better control of the characteristics of the deposited layers.
  • Embodiments described herein allow for a sequential deposition of evaporated source material onto two or more substrates being side by side.
  • the sequential deposition provides a deposition in the first deposition area, thereafter in the second deposition area, and thereafter again in the first deposition area. Substrates in the first and the second deposition area are altematingly processed. Material evaporation from the deposition source assembly 120 is impossible or difficult to stop without disturbing an equilibrium of the evaporation process. A disturbance of the equilibrium would result in a downtime of the deposition apparatus until stable evaporation conditions are re-established.
  • Embodiments described herein allow for a continuous evaporation process wherein substrates in a first deposition area and a second deposition area are sequentially processed.
  • a first substrate is positioned and prepared for deposition of evaporated source material while a second substrate is processed.
  • the first substrate can be processed and the deposition area of the second substrate can be provided with a further substrate, such that the further substrate is positioned and prepared for deposition while the first substrate is processed.
  • FIGS. 1A to ID The sequential processing, i.e. deposition of source material, of the substrates can be better understood with respect' to the sequence shown in FIGS. 1A to ID.
  • a first substrate 132 in a first substrate position 1 12 has been processed and a material layer 133 is provided on the first substrate 132.
  • the deposition source assembly 120 moves in a first direction indicated by arrow 123 in FIG. 1A.
  • the deposition source assembly moves past the second substrate 134 in the second position 1 14.
  • FIG. I B the deposition source assembly 120 has moved once past the second substrate 134.
  • the deposition source assembly moves backward in a second direction opposite to the first direction as indicated by arrow 123 in FIG. I B.
  • FIG. 1 B shows an empty first position 1 12 at the first deposition area. Unloading of the first substrate and loading of another substrate is indicated by arrow 143 in FIG. IB.
  • FIG. 1 C the deposition source assembly has moved a second time past the second substrate 134. The deposition of the layer 135 on the second substrate 134 has been completed.
  • another substrate 132' has been provided at the first position 1 12 and the mask 136 has been aligned with respect to the another substrate.
  • the deposition source assembly 120 continues to move in the second direction as indicated by arrow 123 in FIG. 1 C.
  • the deposition source assembly moves past the another substrate 132'.
  • the deposition source assembly has moved once past the another substrate 132' in FIG. ID.
  • the first half of a layer 133 has been deposited in FIG. ID.
  • the second substrate 134 has been removed from the vacuum chamber 1 10.
  • the second substrate can be removed through valve 142, e.g. a valve for providing a vacuum seal such as a slit valve.
  • FIG. ID shows an empty second position 114 at the second deposition area. Substrates in the first position 1 12 and the second position 1 14 can be processed alternatingly.
  • the substrates can be processed by a first half deposition process, i.e. a source movement in a firsi direction, and a second half deposition process, i.e. the source movement in a second direction opposite to the first direction.
  • a first half deposition process i.e. a source movement in a firsi direction
  • a second half deposition process i.e. the source movement in a second direction opposite to the first direction.
  • the deposition apparatus and methods for depositing provide a symmetric arrangement.
  • the symmetric arrangement having e.g. an idle position of the deposition source assembly 120 in a middle position, can be provided by a two-step deposition process of each substrate.
  • FIG. 2 shows a schematic top view of an evaporation source according to yet further embodiments herein.
  • the evaporation source shown in FIG. 2 includes three distribution assemblies 124.
  • the distribution pipe may extend in a length direction and a plurality of outlets may be arranged along the length direction of the distribution pipe.
  • the walls of the distribution pipe may be heated by heating elements 280, which are mounted or attached to the walls.
  • a first outer shield 202 For reducing the heat radiation towards the substrate, the mask or another portion of a deposition apparatus from the heated portion of the distribution pipe, a first outer shield 202, which surrounds the distribution pipe may be cooled.
  • An additional second outer shield 204 may be provided to reduce the heat load directed towards the deposition area or a substrate, respectively.
  • the second outer shield 204 may have a front wall 205, facing the substrate and/or facing the mask.
  • the second outer shield 204 may include one or more side walls.
  • the second outer shield 204 includes a first side wall 206 and a second side wall 207.
  • the shields can be provided as metal plates having conduits for cooling fluid, such as water, attached to the metal shields or provided within the metal shields. Additionally, or alternatively, a thermoelectric cooling device or other cooling device can be provided to cool the shields.
  • a thermoelectric cooling device or other cooling device can be provided to cool the shields.
  • the outer shields i.e. the outermost shields surrounding the inner hollow space of a distribution pipe, can be cooled.
  • a shielding device 220 is provided, for example, attached to the outer shield or as part of the outer shield. According to some embodiments, the shielding device 220 can also be cooled to further reduce the heat load emitted towards the deposition area. Arrows illustrates the evaporated source material exiting the distribution assembly 124.
  • the evaporation source typically includes a plurality of outlets distributed along a length direction of the evaporation source. For instance, the evaporation source may include 30 or more outlets, such as, for instance, at least 50 outlets, which may be spaced apart from each other by a distance of, for example, 2 cm.
  • the shielding device delimits the distribution cone or plume of evaporated source material distributed towards the substrate. Typically, the shielding device is configured to block at least a portion of the evaporated source materials.
  • the evaporator control housing is configured to maintain an atmospheric pressure within the evaporator control housing and is configured to house at least one element selected from the group consisting of: A switch, a valve, a controller, a cooling unit, a cooling control unit, a heating control unit, a power supply, and a measurement device.
  • a component for operating the evaporation source for the evaporation source array can be provided under atmospheric pressure close to the evaporation crucible and the distribution pipe and can be moved through the deposition apparatus together with the evaporation source.
  • a deposition source assembly may have at least one crucible and a corresponding distribution assembly.
  • two, three, four or more pairs of crucibles and corresponding distribution assemblies may be provided. Having three crucibles and three corresponding distribution assemblies is advantageous for co-evaporation of a plurality of OLED materials forming one OLED layer on a substrate.
  • the source material can be an organic material deposited on the substrate for the manufacture of an OLED device.
  • the source material can be vaporized to form a gaseous source material by evaporation or sublimation. It is to be understood that sublimation may be utilized for some materials and, depending on the material, the term "evaporation" used herein is to be understood as including the option of sublimation.
  • Embodiments described herein provide a deposition source assembly with a body or deposition source having a source material reservoir, and a heater to vaporize the source material into a gas, by at least one of evaporation and sublimation of the source material.
  • the body can extend horizontally and gaseous source material exit(s), e.g. openings, are included on a side of the body, i.e. a distribution assembly. In operation, only the source exit(s) on one side of the source are exposed to the gaseous source material as the source and substrate move relatively to one another.
  • the principle of the evaporation deposition typically includes three phases:
  • the first phase is the evaporating phase in which the material to be evaporated is heated in a crucible to an operating temperature.
  • the operating temperature is set to create sufficient vapor pressure to move material from the crucible to the substrate.
  • the second phase is the transport phase in which the vapor is moved from the crucible through, for example, a steam distribution pipe with nozzles onto a substrate for providing an even layer of the vapor onto the substrate.
  • the third phase is the condensation phase in which the surface of the substrate has a lower temperature than the evaporated material which allows the vaporized material to adhere to the substrate.
  • a deposition source for example a source for evaporation or sublimation of source material
  • a deposition source is transported in a process chamber or a deposition system.
  • substrate carriers or substrates, respectively, and mask carriers or masks, respectively are transported in a process chamber or a deposition system.
  • contactless levitation transportation such as magnetic levitation transportation.
  • a deposition source assembly a carrier or a substrate
  • the substrate support assembly can have a first portion, i.e. a first magnet levitation assembly, providing a first substrate position and a second portion, e.g. a separate second portion, i.e. a second magnetic levitation assembly, providing the second substrate position.
  • the substrate support assembly may be a common support assembly, i.e. a common magnetic levitation assembly, providing the first and the second substrate position.
  • the substrate support assembly can further be configured to transport the substrate, e.g. in a levitated state.
  • the deposition source assembly or the carrier assembly is held in a levitating or floating state using magnetic forces instead of mechanical forces.
  • the transportation apparatus described herein may have no mechanical means, such as a mechanical rail, supporting the weight of the deposition source assembly. In some implementations, there can be no mechanical contact between the deposition source assembly and the rest of the transportation apparatus at all during movement of the deposition source past the substrate.
  • a transportation apparatus for contactless transportation of a deposition source assembly is described.
  • the transportation apparatus is arranged in a vacuum chamber of a deposition apparatus as described herein.
  • the transportation apparatus is configured for contactless levitation, transportation and/or alignment of the deposition source.
  • the contactless levitation, transportation and/or alignment of the deposition source is beneficial in that no particles are generated during transportation, for example due to mechanical contact with guide rails.
  • a further advantage, as compared to mechanical means for guiding the deposition source, is that embodiments described herein do not suffer from friction affecting the linearity of the movement of the deposition source along the substrate to be coated.
  • the contactless transportation of the deposition source allows for a frictionless movement of the deposition source, wherein a target distance between the deposition source and the substrate can be controlled and maintained with high precision and speed.
  • the levitation allows for fast acceleration or deceleration of the deposition source speed and/or fine adjustment of the deposition source speed.
  • the processing system as described herein provides for an improved layer uniformity, which is sensitive to several factors, such as e.g. variations in the distance between the deposition source and the substrate, or variations in the speed at which the deposition source is moved along the substrate while emitting material.
  • the material of mechanical rails typically suffers from deformations which may be caused by evacuation of a chamber, by temperature, usage, wear, or the like. Such deformations affect the distance between the deposition source and the substrate, and hence affect the uniformity of the deposited layers.
  • embodiments of the transportation apparatus as described herein allow for a compensation of any potential deformations present, e.g. in the guiding structure.
  • the apparatus can be configured for a contactless translation of the deposition source assembly along a vertical direction, e.g. the y-direction, and/or along one or more transversal directions, e.g. the x- direction and z-direction, as described in more detail with reference to FIG. 3.
  • An alignment range for the deposition source may be 2 mm or below, more particularly 1 mm or below.
  • the terminology of “substantially parallel” directions may include directions which make a small angle of up to 10 degrees with each other, or even up to 15 degrees.
  • the terminology of “substantially perpendicular” directions may include directions which make an angle of less than 90 degrees with each other, e.g. at least 80 degrees or at least 75 degrees. Similar considerations apply to the notions of substantially parallel or perpendicular axes, planes, areas or the like.
  • the transportation apparatus described herein can be used for vertical substrate processing.
  • the substrate is vertically oriented during processing of the substrate, i.e. the substrate is arranged parallel to a vertical direction as described herein, i.e. allowing possible deviations from exact verticality.
  • a small deviation from exact verticality of the substrate orientation can be provided, for example, because a substrate support with such a deviation might result in a reduced particle adherence on a substrate surface.
  • An essentially vertical substrate may have a deviation of 15° or below from the vertical orientation.
  • the transportation apparatus typically includes a deposition source assembly 330 including a deposition source 352 as described herein and a source support 351 for supporting the deposition source.
  • the source support 351 may be a source cart.
  • the deposition source 352 may be mounted to the source support.
  • the deposition source is adapted for emitting material for depositing on the first substrate 132.
  • a mask 336 may be arranged between the substrate and the deposition source 352. The mask can be provided for preventing deposition of material emitted by the deposition source on one or more regions of the substrate.
  • the mask may be an edge exclusion shield configured for masking one or more edge regions of the substrate, such that no material is deposited on the one or more edge regions during the coating of the substrate.
  • the mask may be a shadow mask for masking a plurality of features, which are deposited on the substrate with the material from the deposition source assembly.
  • the deposition source assembly 330 may include a first active magnetic unit 341 and a second active magnetic unit 342.
  • the transportation apparatus typically further includes a guiding structure 370 extending in a deposition source transportation direction.
  • the guiding structure370 may have a linear shape extending along the source transport direction.
  • the first active magnetic unit 341 , the second active magnetic unit 342 and the guiding structure 370 are configured for providing a first magnetic levitation force Fl and a second magnetic levitation force F2 for levitating the deposition source assembly.
  • an “active magnetic unit” or “active magnetic element” may be a magnetic unit or magnetic element adapted for generating an adjustable magnetic field.
  • the adjustable magnetic field may be dynamically adjustable during operation of the transportation apparatus.
  • the magnetic field may be adjustable during the emission of material by the deposition source for deposition of the material on the substrate and/or may be adjustable between deposition cycles of a layer formation process.
  • the magnetic field may be adjustable based on a position of the deposition source assembly with respect to the guiding structure.
  • the adjustable magnetic field may be a static or a dynamic magnetic field.
  • an active magnetic unit or element can be configured for generating a magnetic field for providing a magnetic levitation force extending along a vertical direction.
  • an active magnetic unit or element may be configured for providing a magnetic force extending along a transversal direction, e.g. an opposing magnetic force as described below.
  • an active magnetic unit or active magnetic element as described herein may be or include an element selected from the group consisting of: An electromagnetic device, a solenoid, a coil, a superconducting magnet, or any combination thereof.
  • the guiding structure 370 may face the first active magnetic unit 341.
  • the guiding structure 370 and/or the first active magnetic unit 341 may be arranged at least partially below the deposition source 352.
  • the source hangs below the guiding structure, i.e. a linear guiding element.
  • the guiding structure 370 may be a static guiding structure which can be statically arranged in the vacuum process chamber.
  • the guiding structure may have magnetic properties.
  • the guiding structure 370 may be made of a magnetic material, e.g. a ferromagnetic, particularly ferromagnetic steel.
  • the guiding structure may be or include a passive magnetic unit.
  • a passive magnetic unit or element may refer to a unit or an element with magnetic properties which are not subject to active control or adjustment.
  • a passive magnetic unit or element may be adapted for generating a magnetic field, e.g. a static magnetic field.
  • a passive magnetic unit or element may not be configured for generating an adjustable magnetic field.
  • a passive magnetic unit or element may be a permanent magnet or have permanent magnetic properties.
  • the first active magnetic unit may be configured for generating a first adjustable magnetic field for providing a first magnetic levitation force Fl .
  • the second active magnetic unit may be configured for generating a second adjustable magnetic field for providing a second magnetic levitation force F2.
  • the apparatus may include a controller 355 configured for individually controlling the first active magnetic unit 341 and/or the second active magnetic unit 342 for controlling the first adjustable magnetic field and/or the second adjustable magnetic field for aligning the deposition source. More specifically, the controller 355 may be configured for controlling the first active magnetic unit and the second active magnetic unit for translationally aligning the deposition source in a vertical direction.
  • the deposition source assembly may be positioned into a target position. Further, the deposition source assembly may be maintained in the target position under the control of the controller.
  • the rotational degree of freedom provided by the individual controllability of the first active magnetic unit 341 and of the second active magnetic unit 342 allows for controlling an angular orientation of the deposition source assembly 330 with respect to the first rotation axis 334. Under the control of the controller 355, a target angular orientation may be provided and/or maintained.
  • a further active magnetic unit 343 may be arranged at the first side 333A of the first plane 333.
  • the further active magnetic unit 343 may face a first portion 371 of the guiding structure 370 and/or may be provided at least partially between the first plane 333 and the first portion 371.
  • the first passive magnetic unit 345 and the guiding structure 370 are configured for providing a first transversal force Tl .
  • the first passive magnetic unit 345 may be configured for generating a magnetic field.
  • the magnetic field generated by the first passive magnetic unit 345 may interact with the magnetic properties of the guiding structure 370 to provide for the first transversal force Tl acting on the deposition source assembly 330.
  • the first opposing force Ol may counteract the first transversal force Tl such that the net force acting on the deposition source assembly 330 along a transversal direction, e.g. the z-direction, is zero. Accordingly, the deposition source assembly 330 may be held without contact at a target position along a transversal direction.
  • the controller 355 may be configured for controlling the further active magnetic unit 343.
  • the control of the further active magnetic unit 343 may include a control of an adjustable magnetic field generated by the further active magnetic unit 343 for controlling the first opposing transversal force O l .
  • Controlling the further active magnetic unit 343 may allow for a contactless alignment of the deposition source 352 along a transversal direction, e.g. the z-direction.
  • a passive magnetic drive unit may be provided at the guiding structure.
  • the passive magnetic drive unit can be a plurality of permanent magnets, particularly a plurality of permanent magnets forming a passive magnet assembly with varying pole orientation.
  • the plurality of magnets can have alternating pole orientation to form the passive magnet assembly.
  • An active magnetic drive unit can be provided at or in the source assembly, e.g. the source support 351.
  • the passive magnetic drive unit and the active magnetic drive unit can provide the drive, e.g. a contactless drive, for movement along the guiding structure, while the source assembly is levitated.
  • a source cart can include further active magnetic units such as at least one of: A first active magnetic unit 341 , a second active magnetic unit 342, a third active magnetic unit, a fourth active magnetic unit, a fifth active magnetic unit, a sixth active magnetic unit, a first passive magnetic unit 345, a second passive magnetic unit, or any combination thereof.
  • the deposition source By controlling the first active magnetic unit, the second active magnetic unit, the third active magnetic unit and the fourth active magnetic unit, the deposition source may be translationally aligned along a vertical direction. Under the control of the controller, the deposition source may be positioned in a target position along a vertical direction, e.g. the y-direction.
  • the deposition source assembly may be rotated around the first rotation axis.
  • the deposition source assembly may be rotated around the second rotation axis.
  • the control of the active magnetic units allows for controlling the angular orientation of the deposition source assembly with respect to the first rotation axis and the angular orientation with respect to the second rotation axis for aligning the deposition source. Accordingly, two rotational degrees of freedom for angularly aligning the deposition source can be provided.
  • FIG. 4 shows a deposition apparatus 400.
  • the deposition apparatus 400 includes a vacuum chamber 1 10 for processing two or more substrates therein. Further, the deposition apparatus includes one or more maintenance chambers, for example for maintenance of a deposition source assembly 120.
  • the deposition apparatus includes a transfer chamber 450.
  • the deposition apparatus includes two loading chambers 442.
  • a first substrate 132 and a second substrate 134 are arranged side by side, i.e. within one plane, in the vacuum chamber 1 10 a deposition source assembly 120 guiding evaporated source material 420 in a deposition direction is moved along the first and the second substrate back and forth along the linear guiding element 122.
  • the first substrate 132 and/or the second substrate 134 can be a mask with respective masks 136/138.
  • the deposition source material guides evaporated source material along the deposition direction.
  • deposition of evaporated source material is continuously provided in the same direction, i.e. the deposition direction, for depositing material on substrates during operation.
  • a first maintenance chamber 430 is provided.
  • the maintenance chamber allows for the transference of a deposition source assembly 120 from the maintenance chamber 432 the vacuum chamber 1 10 and vice versa.
  • the maintenance chamber 430 includes a further linear guiding element 422.
  • the further linear guiding element 422 is provided along a linear path of the linear guiding element 122. Accordingly, a deposition source assembly 120 can be moved from the linear guiding element 122 to the further linear guiding element 422 or from the further linear guiding element 422 to the linear guiding element 122.
  • the maintenance chamber 430 further includes a door 433, which can be opened, for example, after the valve 431 has been closed. Opening the valve 431 allows for providing a passage for a deposition source assembly 120 from the maintenance chamber 430 to the vacuum chamber 1 10 and vice versa. After closing the valve 431 , the maintenance chamber can be vented without disturbing the vacuum in the vacuum chamber 1 10.
  • FIG. 4 shows a maintenance chamber 430 and a second maintenance chamber 432.
  • Each of the maintenance chambers has a further linear guiding element 422 for movement of an evaporation source assembly.
  • a first maintenance chamber 430 can be provided for loading a deposition source assembly 120 from the maintenance chamber to the vacuum chamber 1 10.
  • a second maintenance chamber 432 can be provided for loading a deposition source assembly 120 from the vacuum chamber 1 10 to the second maintenance chamber 432.
  • the second maintenance chamber 432 includes a door 433.
  • Each of the maintenance chambers are connected with a valve 431 to the vacuum chamber 1 10.
  • a deposition apparatus for evaporating source material may include one maintenance chamber or may include two or more maintenance chambers.
  • the maintenance chambers can be used for maintenance of the source. Particularly, the stores operation can be ramped up in the maintenance chamber. This may take several ten minutes and even up to an hour.
  • the ready to use deposition source assembly can then be loaded into the vacuum chamber 1 10. Loading a ready to use deposition source assembly reduces downtime of the deposition apparatus 400.
  • FIG. 4 shows two loading chambers of 442.
  • the first loading chamber is provided adjacent to the deposition area configured for a first substrate 132 and a second loading chamber is provided adjacent to a second deposition area configured for a second substrate 134.
  • the loading chambers 442 can be connected to the vacuum chamber 1 10 by valves 142, for example slit valves.
  • the loading chambers 442 can be configured for including at least a first support track 456 and a second support track 458.
  • the first track 456 corresponds to a substrate support track which is configured for supporting substrates or a carrier having the substrates provided on a carrier.
  • the second support track 458 corresponds to a mask support track which is configured for supporting masks or a carrier having the mask provided on a carrier.
  • loading of substrates and/or masks (or respective carriers) is provided in a direction parallel to the substrate support plane.
  • the loading chambers 442 are further connected to a transfer chamber 450. Loading of substrates from the loading chambers to the transfer chamber and vice versa is provided in a direction perpendicular to the substrate support plane.
  • the transfer chamber 450 and the loadings chamber 442 can be provided to form one vacuum region or can be different vacuum regions.
  • the loading chambers 442 may include further valves 443 for the loading and unloading of masks or carriers supporting the masks on the second support track 458.
  • a substrate or a carrier supporting a substrate can be moved through a deposition system including the deposition apparatus 400 along support track 452.
  • Portions of the support track 452 may be provided in a dual track configuration having the support track 452 and a further support track 454.
  • the dual track configuration of portions of the support track allows for moving processed substrates out of the loading chamber 442 into the transfer chamber 450 and simultaneously moving and process substrates from the transfer chamber 450 into the loading chamber 442.
  • the dual track configuration of portions of the support track 452 can allow for moving masks or carriers having masks supported on carriers into the loading chambers 442 from the transfer chamber 450 and/or moving masks or carriers having masks supported on carriers out of the loading chamber 442 into the transfer chamber 450.
  • Embodiments allowing a transfer of masks via the transfer chamber 450 may omit the further valves 443.
  • FIG. 5 shows a further deposition apparatus 400 without the further valves 443.
  • a dual track configuration having a support track 452 and a further support track 554 can be provided in the transfer chamber 450.
  • embodiments may include a dual track configuration for a substrate support and for a mask support. Accordingly, some embodiments, which can be combined with other embodiments described herein, may include a transfer chamber having four support tracks, two support tracks for the loading and unloading of substrates and two support tracks for the loading and unloading of carriers.
  • FIG. 6 A shows a further modification of a deposition apparatus 400, which can be combined with other embodiments described herein.
  • the loading chambers 642 are increased in size as compared to the loading chambers 442 shown in FIGS. 4 and 5.
  • a space 610 can be provided between the vacuum chamber 1 10 and the transfer chamber 450. This allows for providing an alignment system for aligning the mask and the substrate relative to each other at an outer wall of the vacuum chamber 1 10.
  • a portion of the alignment system can be provided in the space 610, i.e. outside of a vacuum, particularly outside of the vacuum of the vacuum chamber 1 10 or a vacuum of the transfer chamber 450.
  • FIG. 6B shows a deposition system 600 for depositing evaporated material, for example, evaporated source material onto a plurality of substrates.
  • the deposition system 600 includes a loading chamber 632.
  • the loading chamber can be a swing module configured to rotate a substrate or a carrier supporting a substrate on the carrier from a horizontal orientation into a vertical orientation.
  • the swing module configured to rotate the substrate or the carrier can be provided in a vacuum chamber.
  • the deposition system 600 further includes a transfer chamber 450.
  • the transfer chamber can include a first transportation track 634 configured to transport substrates or carriers supporting the substrates from the loading chamber two of rotation chamber 636.
  • the rotation chamber 636 is configured to rotate the substrates or carriers supporting the substrate.
  • the second transportation track 638 is configured to transport the substrates or carriers supporting the substrates from the rotation chamber 636 two and unloading chamber 639.
  • the unloading chamber can be a swing module configured to rotate a substrate or carrier supporting a substrate from the vertical orientation into a horizontal orientation. According to some embodiments, which can be combined with other embodiments described herein, substrates or carriers supporting the substrate can remain in a vertical orientation within the deposition system 600 between the loading chamber 632 and the unloading chamber 639.
  • first transportation track 634 and the second transportation track 638 may also be configured for transportation of substrate or carrier supporting substrates in directions opposite to the directions described above.
  • substrates or carriers can be transported back and forth on each of the transportation tracks.
  • each of the first transportation track 634 and the second transportation track 638 may further include a separate mask support track for supporting masks or carriers having masks on the carrier.
  • the deposition system 600 can include two or more vacuum chambers 1 10 for depositing two substrates in the vacuum chamber, wherein the substrates are arranged side by side and a deposition source assembly 120 provides a continuous deposition process by moving back and forth along a linear guiding element.
  • FIG. 6B shows two vacuum chambers 1 10. Each vacuum chamber shows a first substrate 132 and a second substrate 134. In each vacuum chamber a first deposition area for the first substrate and the second deposition area for the second substrate are provided.
  • each vacuum chamber shows a first mask 136 and a second mask 138.
  • a first mask support and the second mask support is provided in a vacuum chamber 1 10 .
  • Two loading chambers 442 are arranged on opposing sides of the vacuum chambers 1 10.
  • the loading chambers have substrate support tracks, i.e. substrate transportation tracks, with a transport direction parallel to a substrate support plane of the vacuum chamber 110.
  • a first deposition area in the vacuum chamber can be loaded with unprocessed substrates from one loading chamber 442.
  • a second deposition area in the vacuum chamber can be loaded with unprocessed substrates from another loading chamber 442.
  • the loading chambers can include a dual track support configuration for substrates having a first track and a second track. Having a dual track configuration allows for the loading of unprocessed substrates and unloading of the processed substrates in a shorter time.
  • a dual track configuration can also provide for moving masks or mask carriers into and out of the vacuum chamber 1 10.
  • additional tracks for example two additional tracks, can be provided for masks or mask carriers in the loading chambers 442.
  • a loading chamber 442 is provided between two vacuum chambers for processing a substrate side by side.
  • the loading chamber 442 provided between the two vacuum chambers can load and unload substrates and/or masks to each of the two adjacent vacuum chambers 110.
  • a number of N vacuum chambers for processing substrates therein side by side can be provided and a number of N+l loading chambers for loading and unloading of substrates in the N vacuum chambers can be provided.
  • a deposition system 600 may further include a maintenance chamber 430.
  • the maintenance chamber 430 shown in FIG. 6B is provided between two vacuum chambers for processing a substrate.
  • the maintenance chamber 430 is configured to maintain deposition source assembly 120.
  • a ready to use deposition source assembly 120 can be moved from the maintenance chamber 430 into one of the vacuum chambers 1 10.
  • a rotating mechanism can be provided in the maintenance chamber 430 for rotating a ready to use deposition source assembly 120 in the source plane, i.e. the plane in which the source moves sweeping across two substrates back and forth. After the ready to use deposition source assembly has been rotated in the source plane, the deposition source assembly can be moved into one of the vacuum chambers.
  • FIG. 6C shows a further deposition apparatus for depositing evaporated material on two or more substrates.
  • the deposition apparatus includes a vacuum chamber 1 10 having a first deposition area for a first substrate 132 and the second deposition area for a second substrate 134.
  • the deposition areas are provided by a substrate support assembly (with two portions or as one common assembly) providing a first substrate position and a second substrate position. Further, a first support position for a first mask 136 and a second support position for a second mask 138 is provided.
  • the maintenance chamber 430 for maintenance of deposition source assembly 120 is provided.
  • the maintenance chamber 430 can be adjacent to an area 61 1 between the first deposition area and the second deposition area.
  • the area 61 1 can be considered a center area of the vacuum chamber 1 10.
  • the first deposition area for a first substrate 132 and the second deposition area for a second substrate 134 are arranged side by side.
  • the first deposition area and the second position area provide a substrate support plane.
  • the substrate support plane can be vertical or slightly inclined, e.g. by 15° or less, to have downwardly facing substrates.
  • the deposition source assembly 120 is moved back and forth along linear guiding element 122. This is indicated by arrow 622.
  • the maintenance chamber 430 can be vacuum sealed from the vacuum chamber 1 10, e.g. at dashed line 631 .
  • a vacuum seal or a vacuum sealed door can be provided between the maintenance chamber 430 and the vacuum chamber 1 10.
  • the deposition source assembly 120 shown in the maintenance chamber 430 can be moved into the vacuum chamber 1 10 while the deposition source assembly shown in the vacuum chamber 1 10 is moved out of the vacuum chamber 1 10 and into the maintenance chamber 430.
  • this can be provided by a rotating mechanism.
  • the deposition source assembly 120 can be moved in an idle position.
  • the idle position can be at a position at which the deposition source assembly 120 faces an idle shield 690.
  • the idle shield 690 can be moved out of the vacuum chamber 1 10 together with the deposition source assembly 120.
  • the further idle shield 691 can be provided from the maintenance chamber into the vacuum chamber 1 10.
  • a control housing of the deposition source assembly can be connected to atmospheric pressure with a media supply arm 680.
  • the media supply arm 680 can be adjacent to the area 61 1 , e.g. a center area of the vacuum chamber 1 10.
  • the deposition apparatus shown in FIG. 6 C may further include a transfer chamber 450 and two loading chambers 442.
  • the vacuum chamber 1 10 is provided between the two loading chambers 442.
  • a first deposition area is adjacent to the first loading chamber and substrates are loaded into and loaded out of the first deposition area from the first loading chamber.
  • the second deposition area is adjacent to the second loading chamber and the substrates are loaded into and loaded out of the second deposition area from the second loading chamber.
  • the loading chambers 442 include at least a first support track 456, e.g. a first transportation track, and a second support track 458, e.g. a second transportation track. Substrates and/or masks are moved from the loading chambers into the vacuum chamber as shown by arrows in FIG. 6C and parallel to a substrate support plane provided by the first deposition area and the second deposition area.
  • the first support track and the second support track in a loading chamber can be utilized for a faster unloading and loading of substrates and/or may be utilized for the unloading or loading of masks.
  • further support tracks particularly a third support track and forth support track can be provided in a loading chamber. Having more than two support tracks allows for having individual tracks for substrate support and mask support. Accordingly, a dual track configuration may also be a multiple track configuration having two, three, four, or more tracks. According to some embodiments, which can be combined with other embodiments described herein, the dual track configuration or multiple track configuration can be moved from the loading chamber 442 into the transfer chamber 450.
  • the transport assembly is configured to provide for a movement of the tracks in a direction perpendicular to a transport direction on the tracks from the loading chamber to the transfer chamber and vice versa.
  • FIG. 6D shows a further deposition apparatus for depositing evaporated material on two or more substrates.
  • the deposition apparatus includes a vacuum chamber 1 10 having a first deposition area for a first substrate 132 and the second deposition area for a second substrate 134.
  • the first deposition area and the second deposition area are provided on a side of the vacuum chamber 1 10 facing away from the transfer chamber 450.
  • a deposition apparatus can be provided, wherein a linear guiding element 122 for supporting a deposition source assembly 120 is provided between a substrate support assembly and a chamber wall adjacent to a the transfer chamber 450 or between a substrate support assembly and the transfer chamber 450. This may be beneficial as an alignment of a substrate supported on the substrate support assembly and a mask supported on a mask support assembly can be easier to access from an outer wall of the vacuum chamber 1 10, e.g. the lower wall of vacuum chamber in FIG. 6D.
  • the deposition areas are provided by a substrate support assembly (with two portions or as one common assembly) providing a first substrate position and a second substrate position. Further, a first support position for a first mask 136 and a second support position for a second mask 138 is provided.
  • a maintenance chamber 430 for maintenance of deposition source assembly 120 is provided.
  • the maintenance chamber 430 can be adjacent to an area between the first deposition area and the second deposition area. The area can be considered a center area of the vacuum chamber 1 10.
  • the first deposition area for a first substrate 132 and the second deposition area for a second substrate 134 arranged side by side.
  • the first deposition area and the second position area provide a substrate support plane.
  • the substrate support plane can be vertical or slightly inclined, e.g. by 15° or less, to have downwardly facing substrates.
  • the deposition source assembly 120 is moved back and forth along linear guiding element 122. This is indicated by arrow 622.
  • the maintenance chamber 430 can be vacuum sealed from the vacuum chamber 1 10.
  • optional gate valves may be provided to seal the deposition area in vacuum chamber 1 10 from the maintenance chamber 430.
  • a vacuum seal or a vacuum sealed door can be provided between the maintenance chamber 430 and the vacuum chamber 1 10.
  • the maintenance chamber can be provided according to any of the other embodiments described herein, e.g. embodiments described with respect to FIG. 6C.
  • the deposition apparatus shown in FIG. 6D may further include a transfer chamber 450 and two loading chambers 442.
  • the vacuum chamber 1 10 is provided between the two loading chambers 442.
  • a first deposition area is adjacent to the first loading chamber and substrates are loaded into and loaded out of the first deposition area from the first loading chamber.
  • the second deposition area is adjacent to the second loading chamber and substrate are loaded into and loaded out of the second deposition area from the second loading chamber.
  • the loading chambers 442 can have at least a first support track 452, e.g. a first transportation track, and a second support track 454, e.g. a second transportation track, moved into the loading chamber, e.g. from the transfer chamber 450. Substrates and/or masks are moved from the loading chambers into the vacuum chamber parallel to a substrate support plane provided by the first deposition area and the second deposition area.
  • further support tracks particularly a third support track and fourth support track can be provided in a loading chamber. Having more than two support tracks allows for having individual tracks for substrate support and mask support.
  • a dual track configuration may also be a multiple track configuration having. two, three, four, or more tracks.
  • the dual track configuration or multiple track configuration can be moved from the loading chamber 442 into the transfer chamber 450 and vice versa.
  • FIG. 7A shows a further deposition system 600.
  • the deposition system includes the loading chamber 632 and an unloading chamber 639.
  • the loading chamber can be an unloading chamber and the unloading chamber can be a loading chamber.
  • boast chambers can be provided for loading and unloading.
  • the loading chamber and the unloading chamber include a swing module for rotating from a horizontal orientation in a vertical orientation and vice versa.
  • the deposition system 600 includes a plurality of deposition apparatuses 400.
  • the deposition apparatuses can be provided with one or more of the details and aspects of the other deposition apparatuses described herein, particularly as described with respect to FIGS 4, 5, 6A, and 6C.
  • the transfer chambers of the deposition apparatuses are arranged in a line to allow for substrate and carrier transportation through the transfer chamber, e.g. adjacent transfer chambers. Further, it may be possible that two or more vacuum chambers (see e.g. vacuum chamber 1 10 in FIGS 4, 5, 6A, and 6C) of the deposition apparatuses have a common transfer chamber.
  • One layer of, for example, organic material can be provided in each of the deposition apparatuses 400.
  • a device such as an OLED display can be manufactured layer by layer while the substrate moves through the deposition system through the various deposition apparatuses.
  • the deposition system 600 further includes rotating chamber 710 for rotating transportation tracks provided in the rotating chambers by e.g. 90°, 180°, 270° or 360°.
  • the rotating chambers can have a number of support track source transportation tracks, which correspond to the number of tracks in the transfer chambers.
  • the correspondence of numbers can be such that the rotation chamber has twice as many tracks as a transfer chamber. This allows for transporting substrates and/or masks from the transportation direction in one deposition apparatus to an opposite transportation direction in another deposition apparatus.
  • the rotating chambers may further be connected to one or more mask storage chambers, i.e. a mask shelf chambers or mask buffer chambers.
  • the storage buffer chambers hold a plurality of masks, which may be regularly exchanged in the vacuum chambers of the deposition apparatuses.
  • FIG. 7A shows three mask storage chambers 720. Providing two or more mask storage chambers allows for improved mask traffic within the deposition system.
  • the mask buffer chambers may include a slit valve for transferring masks into and out of cleaning chambers or load lock chambers, i.e. chambers.
  • FIG. 7B shows a further deposition system including two or more deposition apparatuses 400.
  • the deposition apparatuses 400 have loading chambers on respective sides of the substrate positions being arranged side by side in the vacuum chamber.
  • the loading chambers are connected to a transfer chamber 450.
  • Substrates and/or carriers can be moved from the transfer chamber 450 into the loading chamber by moving the support tracks perpendicular to a transportation direction of the support tracks.
  • the system shown in FIG. 7B exemplarily includes two mask storage chambers 720 connected to a rotating chamber 710.
  • the support tracks in the rotating chamber can be rotated to have a transport direction facing the mask storage chambers.
  • a mask can be loaded onto the support tracks in the rotating chamber.
  • the rotating chamber can rotate the support tracks, i.e.
  • a mask can be transferred into the transfer chamber, i.e. along a support track 452, a further support track 454 or a further track 750.
  • the further track 750 can be provided for easier mask traffic within the deposition system.
  • loading chambers may also have a first support track 456, a second support track 458 and an additional support track.
  • FIGS. 8A to 8H illustrate a deposition apparatus for depositing material on two substrates side by side, i.e. with substrates edges facing each other.
  • the apparatus includes a vacuum chamber for processing, i.e. deposition, of the two substrates, loading chambers 442 adjacent to respective substrates positioned in the vacuum chamber and the transfer chamber 450.
  • the transfer chambers 450 include a support track 452 for transporting substrates through the deposition system. Further, the support track 452 has portions with dual track configuration, wherein a second track 454 is provided. As illustrated in FIGS. 8A to 8H, a support track portion with dual track configuration can be moved from the transfer chamber 450 into the loading chamber 442.
  • a support track portion with a dual track configuration can be moved from one chamber to the adjacent chamber, for example from a transfer chamber to a loading chamber.
  • both the transfer chamber and loading chamber may include one or more support tracks, for example support tracks with a single track configuration, a dual track configuration, a triple track configuration or higher track configurations.
  • Carriers for substrates and/or mask may be transferred by switching between tracks or by moving tracks from one chamber to another chamber.
  • a substrate S I is in a first substrate position, i.e. in a first deposition area, for example on a substrate support.
  • the substrate support may provide the substrate S I in a levitated state in the first deposition area.
  • the first mask 136 is provided between the deposition source assembly 120 and the substrate S I .
  • a substrate S2 is provided in a second substrate position, i.e. in a second deposition area, for example on a substrate support.
  • the substrate support may provide the substrate S2 in the levitated state in the second deposition area.
  • the deposition source assembly 120 moves along the linear guiding element 122 between two end positions sequentially along the first deposition area and the second deposition area.
  • the deposition source assembly 120 moves in a first direction 801 and in a second direction 802 opposite to the first direction 801.
  • the substrate S I has been processed by one complete sweep with evaporated material.
  • a movement of the deposition source assembly 120 from the right- hand side to the left-hand side has deposited material on about a half of the substrate SI .
  • the portion with the dual track configuration of the support track of the transfer chamber is moved into the loading chamber 442 on the right- hand side as indicated by arrow 81 1.
  • the support track portion with the dual track configuration has a substrate S3 loaded thereon.
  • the substrate S3 is moved past a slit valve in a plane of the first deposition area.
  • An empty support track is provided in a substrate support plane, i.e. a plane of the first deposition area.
  • the processed substrate S I can be moved on the support track 454. At this time, the evaporation of source material onto the substrate SI has been completed.
  • the deposition source assembly 120 continues to move along the first direction 801 and starts to deposit the second substrate S2. In FIG. 8C a first half of the second substrate is two has been deposited with a first sweep.
  • the first substrate S2 has been loaded on support track 454 and the portion of the support track with dual track configuration can be moved from the loading chamber 442 to the transfer chamber 450 as indicated by arrow 813.
  • the first substrate S I is aligned with the support track 452 and can be moved to a downstream process as indicated by arrow 81 5.
  • the third substrate S3 is aligned with the substrate support assembly in the vacuum chamber 1 10 and the third substrate S3 can be moved in the first deposition area.
  • the deposition source assembly has completed one sweep of substrate S2 and moves backward to sequentially pass by the second deposition area and the first deposition area.
  • a fourth substrate S4 has been loaded from a downstream process onto the portion of the support track 452 having the dual track configuration.
  • the substrate S4 is moved as indicated by arrow 816 into the loading chamber 442 adjacent to the second deposition area, e.g. the left loading chamber in FIGS.
  • FIG. 8E further illustrates that the deposition source assembly deposited about one half of substrate S2 while moving along the second direction 802.
  • FIG. 8F the processing of the substrate S2 has been completed, the substrate is moved as indicated by arrow 817 onto a track of the portion of the support track having the dual track configuration.
  • the substrate S4 has been moved past a slit valve being in line with a substrate support assembly in the vacuum chamber, e.g. the plane of the second deposition area.
  • FIG. 8G processing of the substrate S3 in the first deposition area has started while the deposition source assembly continues to move along the second direction.
  • the dual track configuration portion of the support track moves as indicated by arrow 818 in order to align the substrate S2 with support track 452 and substrate S4 with the substrate support assembly of the vacuum chamber.
  • the substrate S2 can be moved to a downstream process as indicated by arrow 820 and the substrate S4 can be moved into the vacuum chamber as indicated by arrow 819.
  • Fig. 9 shows a further deposition apparatus 900 for depositing evaporated material or evaporated source material, respectively, on two or more substrates.
  • the deposition apparatus includes a vacuum chamber 901 and a substrate support assembly providing a first deposition area for a first substrate 132 and a second deposition area for a second substrate 134.
  • the first deposition area and the second deposition area are arranged side by side. That is, the edges of the first substrate 132 and the second substrate 134 face each other.
  • a deposition source assembly 120 for evaporating source material is configured to move along a first direction to sequentially deposit at the first position area and the second deposition area and, thereafter, along a second direction opposite to the first direction to sequentially deposit at the second deposition area and the first deposition area.
  • a first mask 136 is provided between the deposition source assembly and the first deposition area providing a substrate position for the first substrate 132.
  • a second mask 138 is provided between the deposition source assembly and the second deposition area providing a substrate position for the second substrate 134.
  • maintenance chambers 430 are provided, for example on each side of the vacuum chamber 901. Details, aspects and implementations of the maintenance chamber described herein can be combined with embodiments of a deposition apparatus 900 as exemplarily described with respect to fig. 9.
  • a plurality of support tracks can be provided in the vacuum chamber 901. Further, one or more slit valves can be provided on each side of the vacuum chamber 901 .
  • Fig. 9 shows a first slit valve 91 1 for receiving masks and substrates from downstream processes and a second slit valve 912 for moving masks and substrates to upstream processes. This is indicated by the arrows in fig. 9.
  • a dual track support is provided having a first track 922 and a second track 924. The dual track support can be moved between the front position shown in fig. 9 and a rear position indicated by the rear track 928. Substrates can be moved through a deposition system on each of the first support track 922, the second support track 924 and the rear track 928. Further, a mask can be moved through a deposition system on the masks track.
  • FIG. 10A to 10H illustrate operation of the deposition system having two or more deposition apparatuses 900 illustrated in fig. 9.
  • Figures 10A to 10H show a transfer chamber 1050, the first vacuum chamber 901 and a second vacuum chamber 901. Each of the vacuum chambers has a first deposition area and the second deposition area.
  • the respective substrate positions are denoted as position PI , position P2, position P3, and position P4.
  • the left position in transfer chamber 1050 is denoted as P- l (not shown) and the right position in the transfer chamber 1050 is denoted as P0 (not shown).
  • Each of the dual track supports for supporting substrates has a rear position R and a front position F, which are exemplarily shown in figures 10A and 10D. The rear position R and the front position F are provided in the other figures.
  • the dual track supports in position P0, P2, and P4 are moved into the rear position as indicated by the arrows.
  • the deposition source assembly continues to move along the first direction 801 to process substrates in the positions PI and P3.
  • the substrate on position P4 is moved to a downstream process.
  • the substrate in position P2 is moved to the position P4.
  • the substrate in position P0 is moved to the position P2 and a new substrate is loaded into position P0.
  • a substrate in position PI receives the first layer
  • a substrate in position P3 receives a second layer.
  • the deposition source assembly has completed a first sweep across the substrate in position P I and P3 and moves into a second direction 802 opposite to the first direction 801.
  • the dual track supports in positions P0, P2, and P4 are moved back to the front position as indicated by the arrows.
  • the deposition source assembly has continued to provide a second sweep across the substrate in positions PI and P3.
  • deposition of a first layer in position P I has been completed and deposition of a second layer in position P3 has been completed.
  • the dual track supports in positions P-l , P I , and P3 are moved to a rear position as indicated by the arrows.
  • the deposition source assembly continues to move along the second direction 802 to sequentially pass along the second deposition area and the first deposition area, i.e. from position PI to P2 and from position P3 to P4.
  • the substrate on position P3 is moved to a downstream process.
  • the substrate on position PI is moved to the position P3.
  • the substrate on position P-l is moved to the position PI , and a new substrate is loaded in position P- 1.
  • the deposition source assembly continues to provide a first layer in the position P2 and a further layer in the position P4.
  • deposition of a first half of the layer in position P2 and the first half of the layer in position P4 has been completed and the deposition source assembly moves along the first direction 801 , which is opposite to the second direction 802.
  • the dual track supports in position P-l , PI , and P3 move back to the front position. Subsequently, the process can be continued as indicated by fig. 10A.
  • a continuous deposition process can be provided in the vacuum chambers 901.
  • a continuous evaporation process can be provided while alternatively depositing material in a first deposition area and a second deposition area, wherein the deposition direction remains essentially the same for depositing material on substrates.
  • FIG. 1 1 shows a deposition system for depositing evaporated material, for example, evaporated source material onto a plurality of substrates.
  • the deposition system includes a loading chamber 632.
  • the loading chamber can be a swing module configured to rotate a substrate or a carrier supporting a substrate on the carrier from a horizontal orientation into a vertical orientation.
  • the swing module configured to rotate the substrate or the carrier can be provided in a vacuum chamber.
  • the deposition system further includes a plurality of deposition apparatus 900, which may be operated as illustrated with respect to figures 10A to 10H. Upon being processed in a first row of deposition apparatuses, substrates can be loaded in a rotating chamber 710.
  • the rotating chamber 710 can rotate by 180° to provide the substrates to a second row of deposition apparatuses.
  • one or more mask storage chamber 720 can be provided to the rotating chamber.
  • the rotating chamber can receive masks from the mask storage chambers 720 or move masks to the mask storage chambers 720 by rotating by 90°.
  • the substrate can be provided to unloading chamber 639.
  • the unloading chamber can be a swing module configured to rotate a substrate or carrier supporting a substrate from the vertical orientation into a horizontal orientation.
  • Fig. 12 shows a deposition system for depositing evaporated material.
  • a rotating chamber 710 is provided between deposition apparatuses 900 in order to reduce the distance of one or more of the mask storage chambers 720 from respective deposition chambers or deposition apparatuses 900, respectively.
  • a further rotating chamber 710 is provided to move the substrates during processing from an incoming row of deposition apparatuses to an exiting row of deposition apparatuses.
  • Embodiments of the present disclosure refer to deposition of source material on two substrates, particularly deposition of source material on two substrates arranged next to each other, side by side, e.g. with a scanning source, i.e. a moving source.
  • a first deposition area and a second deposition area are arranged side by side and a deposition source assembly for evaporating source material configured to move along a first direction to sequentially deposit at the first deposition area and the second deposition area and along a second direction opposite to the first direction to sequentially deposit at the second deposition area and the first deposition area.
  • a continuous deposition process can be provided such that material utilization of a deposition source, particularly an evaporation source can be very high, e.g.

Abstract

A deposition apparatus for depositing evaporated source material on two or more substrates is described. The deposition apparatus includes a vacuum chamber, a substrate support assembly providing a first deposition area for a first substrate of the two or more substrates and a second deposition area for a second substrate of the two or more substrates, and wherein the first deposition area and the second deposition area are arranged side by side, and a deposition source assembly for evaporating source material configured to move along a first direction to sequentially deposit at the first deposition area and the second deposition area and along a second direction opposite to the first direction to sequentially deposit at the second deposition area and the first deposition area.

Description

APPARATUS AND METHOD FOR CONTINUOUS EVAPORATION HAVING
SUBSTRATES SIDE BY SIDE
TECHNICAL FIELD
[0001] Embodiments of the present disclosure relate to deposition of source material on two substrates, particularly deposition of source material on two substrates arranged next to each other, side by side, with a scanning source, i.e. a moving source. Embodiments of the present disclosure particularly relate to a deposition apparatus for depositing evaporated source material on two or more substrates, and a method of depositing evaporated source material on two or more substrates.
BACKGROUND
[0002] Organic evaporators are a tool for the production of organic light-emitting diodes (OLED). OLEDs are a special type of light-emitting diodes in which the emissive layer comprises a thin-film of certain organic compounds. Organic light emitting diodes (OLEDs) are used in the manufacture of television screens, computer monitors, mobile phones, other hand-held devices, etc. for displaying information. OLEDs can also be used for general space illumination. The range of colors, brightness, and viewing angles possible with OLED displays is greater than that of traditional LCD displays because OLED pixels directly emit light. Therefore, the energy consumption of OLED displays is considerably less than that of traditional LCD displays. Further, the fact that OLEDs can be manufactured onto flexible substrates results in further applications. A typical OLED display, for example, may include layers of organic material situated between two electrodes that are all deposited on a substrate in such a manner as to form a matrix display panel having individually energizable pixels.
[0003] Deposition throughput, and deposition system size, and, thus, footprint, for forming film layers onto a substrate can be enhanced by using the same source to deposit the film layer on different substrates in the same chamber. Such systems may use a scanning evaporation which scans across a first substrate to deposit a film layer on the substrate, and then rotates 1 80 degrees and scans across a second substrate in the chamber to form a film layer on the substrate. The difficulty in controlling the source position in the chamber, and the mechanisms for scanning movement of the source, are further complicated by the need to rotate the source.
[0004] In view of the above, it is beneficial to provide an improved evaporation source assembly, an improved deposition apparatus or an improved processing system including an improved deposition apparatus, respectively, and an improved method of depositing evaporated source material on two or more substrates.
SUMMARY
[0005] According to one embodiment, a deposition apparatus for depositing evaporated source material on two or more substrates is provided. The deposition apparatus includes a vacuum chamber; a substrate support assembly providing a first deposition area for a first substrate of the two or more substrates and a second deposition area for5 a second substrate of the two or more substrates, and wherein the first deposition area and the second deposition area are arranged side by side; and a deposition source assembly for evaporating source material configured to move along a first direction to sequentially deposit at the first deposition area and the second deposition area and along a second direction opposite to the first direction tp sequentially deposit at the second deposition area and the first deposition area.
[0006] According to another embodiment, a deposition apparatus for depositing evaporated source material on two or more substrates is provided. The deposition apparatus includes a vacuum chamber; a substrate support assembly providing a first deposition area for a first substrate of the two or more substrates and a second deposition area for a second substrate of the two or more substrates, and wherein the first deposition area and the second deposition area are arranged side by side in a substrate support plane; and a deposition source assembly for evaporating source material configured to move along a first direction back and forth to sequentially pass along the first deposition area and the second deposition area. [0007] According to another embodiment, a deposition system for depositing evaporated source material on two or more substrates is provided. The deposition system includes a deposition apparatus according to any of the embodiments, examples and. implementations described herein. The deposition system further includes a mask storage chamber and one or more support tracks configured to move a mask carrier from the mask storage chamber to the deposition apparatus.
[0008] According to another embodiment, a deposition system for depositing evaporated source material on two or more substrates is provided. The deposition system includes two or more deposition apparatuses according to any of the embodiments, examples and implementations described herein, wherein each of the deposition apparatuses have a substrate support track, a carrier support track and a transfer track, and wherein the substrate support tracks, the carrier support tracks and the transfer tracks of adjacent deposition apparatuses of the two or more deposition apparatuses are arranged in a line. The deposition system further includes, a maintenance chamber coupled to at least one vacuum chamber and having a further linear guiding element for moving the deposition source assembly from the linear guiding element to the further linear guiding element.
BRIEF DESCRIPTION OF THE DRAWINGS
[0009] So that the manner in which the above recited features can be understood in detail, a more particular description, briefly summarized above, may be had by reference to embodiments. The accompanying drawings relate to embodiments and are described in the following:
FIGS. 1 A to ID show a deposition apparatus according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates;
FIG. 2 shows a deposition source assembly for use in deposition apparatuses and methods of deposition according to embodiments described herein; FIG. 3 shows a deposition source assembly and a moving mechanism for the deposition source assembly for use in deposition apparatuses and methods of depositing according to embodiments described herein;
FIG. 4 shows a deposition apparatus according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates;
FIG. 5 shows a deposition apparatus according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates;
FIG. 6A shows a deposition apparatus according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates;
FIG. 6B shows a deposition system according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates and has two or more deposition apparatuses;
FIG. 6C shows a deposition apparatus according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates;
FIG. 6D shows a deposition apparatus according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates;
FIG. 7A shows a deposition system according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates and has two or more deposition apparatuses;
FIG. 7B shows a deposition system according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates and has two or more deposition systems;
FIGS. 8A to 8H show a deposition apparatus according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates and illustrate a sequence of operating thereof;
FIG. 9 shows a deposition apparatus according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates; FIGS. 1 OA to 1 OH show a deposition apparatus according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates and illustrate a sequence of operating thereof;
FIG. 1 1 shows a deposition system according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates and has two or more deposition systems; and
FIG. 12 shows a deposition system according to embodiments of the present disclosure for a continuous and sequential deposition of two or more substrates and has two or more deposition systems.
DETAILED DESCRIPTION OF EMBODIMENTS
[0010] Reference will now be made in detail to the various embodiments, one or more examples of which are illustrated in the figures. Within the following description of the drawings, the same reference numbers refer to same components. Generally, only the differences with respect to individual embodiments are described. Each example is provided by way of explanation and is not meant as a limitation. Further, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. It is intended that the description includes such modifications and variations.
[001 1 ] Embodiments described herein particularly relate to deposition of organic materials, e.g. for OLED display manufacturing, e.g. on large area substrates. According to some embodiments, large area substrates or carriers supporting one or more substrates, i.e. large area carriers, may have a size of at least 0.174 m2. Typically, the size of the carrier can be about 1.4 m2 to about 8 m2, more typically about 2 m2 to about 9 m2 or even up to 12 m2. Typically, the rectangular area in which the substrates are supported, for which the holding arrangements, apparatuses, and methods according to embodiments described herein are provided, are carriers having sizes for large area substrates as described herein. For instance, a large area carrier, which would correspond to an area of a single large area substrate, can be GEN 5, which corresponds to about 1.4 m2 substrates (1.1 m x 1 .3 m), GEN 7.5, which corresponds to about 4.29 m2 substrates ( 1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7m2 substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m2 substrates (2.85 m χ 3.05 m). Even larger generations such as GEN 1 1 and GEN 12 and corresponding substrate areas can similarly be implemented. Half sizes of the Gen generations may also be provided for OLED display manufacturing.
[0012] According to typical embodiments, which can be combined with other embodiments described herein, the substrate thickness can be from 0.1 to 1.8 mm and the holding arrangement, and particularly the holding devices, can be adapted for such substrate thicknesses. However, particularly the substrate thickness can be about 0.9 mm or below, such as 0.5 mm or 0.3 mm, and the holding arrangement, and particularly the holding devices, are adapted for such substrate thicknesses.
[0013] The term "substrate" as used herein may particularly embrace substantially inflexible substrates, e.g., a wafer, slices of transparent crystal such as sapphire or the like, or a glass plate. However, the present disclosure is not limited thereto and the term "substrate" may also embrace flexible substrates such as a web or a foil. The term "substantially inflexible" is understood to distinguish over "flexible". Specifically, a substantially inflexible substrate can have a certain degree of flexibility, e.g. a glass plate having a thickness of 0.9 mm or below, such as 0.5 mm or below, wherein the flexibility of the substantially inflexible substrate is small in comparison to the flexible substrates.
[0014] According to embodiments described herein, the substrate may be made of any material suitable for material deposition. For instance, the substrate may be made of a materia] selected from the group consisting of glass (for instance soda-lime glass, borosilicate glass etc.), metal, polymer, ceramic, compound materials, carbon fiber materials or any other material or combination of materials which can be coated by a deposition process.
[0015] FIGS. 1 A to I D show an apparatus for depositing evaporated material, i.e. evaporated source material on two or more substrates. The apparatus includes a vacuum chamber 1 10. The vacuum chamber can also be considered a processing chamber or a deposition chamber. A substrate support assembly provides a first position 1 12 for a first substrate corresponding to a first deposition area and a second position 1 14 for a second substrate corresponding to a second deposition area. According to embodiments described herein, which can be combined with other embodiments, the first deposition area and the second deposition area are arranged side by side. The substrate support assembly can have a first portion providing a first substrate position and a second portion, e.g. a separate second portion, providing the second substrate position. The substrate support assembly may be a common support assembly providing the first and the second substrate position. According to some embodiments, which can be combined with other embodiments described herein, the substrate support assembly can further be configured to transport the substrate. The first substrate 132 and the second substrate 134 can be arranged in one plane, i.e. a substrate support plane. There may be a slight offset between a first substrate and a second substrate, e.g. of a few millimeters or a few centimeters. A potentially existing offset is beneficially minimized to increase uniformity of material deposition between substrates. An arrangement of the first deposition area and the second deposition area side by side refers to an arrangement, wherein edges of the substrates or edges of respective carriers supporting the substrates face each other. The surfaces of the substrates are arranged essentially in one plane.
[0016] The apparatus shown in FIGS. 1A to I D further includes a deposition source assembly 120. The deposition source assembly 120 is movably supported on a linear guiding element 122. The deposition source assembly is movable back and forth along the linear guiding element, particularly between two endpoints of the linear guiding element. Accordingly, the deposition source assembly is moved back and forth within a source plane, e.g. one single source plane. As shown in FIG. 1A, the deposition source assembly 120 can be moved along a first direction indicated by arrow 123 in FIG. 1A and a second direction opposite to the first direction indicated by arrow 123 in FIG. I B.
[0017] The deposition source assembly includes one or more crucibles 126 and one or more distribution assemblies 124. According to some embodiments, which can be combined with other embodiments described herein, the distribution assembly 124 provides a linear source. The distribution assembly 124 can have a plurality of openings or nozzles extending in one direction to provide a line of evaporated source material while moving along the linear guiding element 122. [0018] Embodiments described herein can be beneficially utilized with vertical substrate orientation and vertical orientation of the line source provided by the deposition source assembly. That is the deposition source assembly can provide a linear deposition source having a source extension direction, e.g. configured to provide a line of deposition material. Accordingly, FIGS. 1 A to I D correspond to top views of the apparatus for depositing evaporated material onto the substrate. The substrate support plane can be defined by the surface of the first substrate 132 and/or the second substrate 134. The source plane can be defined by the extension of the distribution assembly 124 and the movement of the deposition source assembly 120 along a first direction as indicated by arrow 123. Reference to a vertical orientation as described herein may allow for a slight deviation from the direction of gravity. A vertical orientation is essentially vertical and distinguishes over a horizontal substrate orientation.
[0019] According to some embodiments, which can be combined with other embodiments described herein, a substrate in a first deposition area, a substrate in the second deposition area and the length of the distribution pipe, for example the length of the line source, may be essentially parallel to the direction of gravity. Essentially parallel is to be understood as having an angle of -20° to 20°, such as -15° to 15°. According to these embodiments, the substrates are essentially vertically orientated (essentially -20° < substrate orientation < +20° deviating from vertical). According to embodiments described herein, which can be combined with other embodiments described herein, the deviation from an exact vertical orientation is such that the substrate surface to be deposited evaporated material faces downward. The substrate surface to be deposited facing downward allows for reduced particle generation on the surface to be deposited.
[0020] The crucible 126 can be provided below the distribution assembly 124 such that the source material evaporated in the crucible is guided from the crucible to the distribution assembly, particularly the source material evaporated in the crucible is guided directly from the crucible to the distribution assembly. The deposition source assembly 120 further includes a support 128 for the crucible and the distribution assembly. The support 128 may further include a driving unit for driving the deposition source assembly 120 along the linear guiding element 122. During operation, the crucible and the distribution assembly is stationary with respect to the support 128. Particularly, the crucible and the distribution assembly is not rotated in an opposite direction (e.g. downwardly in FIGS. 1A to I D) with respect to the support 128. Also the support 128 is not rotated during operation. Maintaining one direction of material deposition onto the substrates can result in a less complex design of the deposition source assembly 120. Since the performance of the deposition source assembly mainly determines the result of the layer deposited onto the substrates, an easier design of the deposition source assembly allows for better control of the characteristics of the deposited layers.
[0021 ] Embodiments described herein allow for a sequential deposition of evaporated source material onto two or more substrates being side by side. The sequential deposition provides a deposition in the first deposition area, thereafter in the second deposition area, and thereafter again in the first deposition area. Substrates in the first and the second deposition area are altematingly processed. Material evaporation from the deposition source assembly 120 is impossible or difficult to stop without disturbing an equilibrium of the evaporation process. A disturbance of the equilibrium would result in a downtime of the deposition apparatus until stable evaporation conditions are re-established. Embodiments described herein allow for a continuous evaporation process wherein substrates in a first deposition area and a second deposition area are sequentially processed. A first substrate is positioned and prepared for deposition of evaporated source material while a second substrate is processed. After processing of the second substrate, the first substrate can be processed and the deposition area of the second substrate can be provided with a further substrate, such that the further substrate is positioned and prepared for deposition while the first substrate is processed.
[0022] The sequential processing, i.e. deposition of source material, of the substrates can be better understood with respect' to the sequence shown in FIGS. 1A to ID. In FIG. 1A, a first substrate 132 in a first substrate position 1 12 has been processed and a material layer 133 is provided on the first substrate 132. The deposition source assembly 120 moves in a first direction indicated by arrow 123 in FIG. 1A. The deposition source assembly moves past the second substrate 134 in the second position 1 14. In FIG. I B, the deposition source assembly 120 has moved once past the second substrate 134. The deposition source assembly moves backward in a second direction opposite to the first direction as indicated by arrow 123 in FIG. I B. The first half of a layer is provided on the second substrate 134. In the meantime, the first substrate 132 has been removed from the vacuum chamber 1 10. The first substrate 132 can be removed through valve 142, e.g. a valve for providing a vacuum seal such as a slit valve. FIG. 1 B shows an empty first position 1 12 at the first deposition area. Unloading of the first substrate and loading of another substrate is indicated by arrow 143 in FIG. IB. In FIG. 1 C, the deposition source assembly has moved a second time past the second substrate 134. The deposition of the layer 135 on the second substrate 134 has been completed. In the meantime, another substrate 132' has been provided at the first position 1 12 and the mask 136 has been aligned with respect to the another substrate. The deposition source assembly 120 continues to move in the second direction as indicated by arrow 123 in FIG. 1 C. The deposition source assembly moves past the another substrate 132'. The deposition source assembly has moved once past the another substrate 132' in FIG. ID. The first half of a layer 133 has been deposited in FIG. ID. In the meantime, the second substrate 134 has been removed from the vacuum chamber 1 10. The second substrate can be removed through valve 142, e.g. a valve for providing a vacuum seal such as a slit valve. FIG. ID shows an empty second position 114 at the second deposition area. Substrates in the first position 1 12 and the second position 1 14 can be processed alternatingly. According to some embodiments, the substrates can be processed by a first half deposition process, i.e. a source movement in a firsi direction, and a second half deposition process, i.e. the source movement in a second direction opposite to the first direction.
[0023] According to some embodiments, which can be combined with other embodiments described herein, the deposition apparatus and methods for depositing provide a symmetric arrangement. The symmetric arrangement having e.g. an idle position of the deposition source assembly 120 in a middle position, can be provided by a two-step deposition process of each substrate.
[0024] FIG. 2 shows a schematic top view of an evaporation source according to yet further embodiments herein. The evaporation source shown in FIG. 2 includes three distribution assemblies 124. According to embodiments herein, the distribution pipe may extend in a length direction and a plurality of outlets may be arranged along the length direction of the distribution pipe. The walls of the distribution pipe may be heated by heating elements 280, which are mounted or attached to the walls. For reducing the heat radiation towards the substrate, the mask or another portion of a deposition apparatus from the heated portion of the distribution pipe, a first outer shield 202, which surrounds the distribution pipe may be cooled. An additional second outer shield 204 may be provided to reduce the heat load directed towards the deposition area or a substrate, respectively. The second outer shield 204 may have a front wall 205, facing the substrate and/or facing the mask. The second outer shield 204 may include one or more side walls. For instance, the second outer shield 204 includes a first side wall 206 and a second side wall 207.
[0025] According to some embodiments, which can be combined with other embodiments described herein, the shields can be provided as metal plates having conduits for cooling fluid, such as water, attached to the metal shields or provided within the metal shields. Additionally, or alternatively, a thermoelectric cooling device or other cooling device can be provided to cool the shields. Typically, the outer shields, i.e. the outermost shields surrounding the inner hollow space of a distribution pipe, can be cooled.
[0026] As further shown in FIG. 2, a shielding device 220 is provided, for example, attached to the outer shield or as part of the outer shield. According to some embodiments, the shielding device 220 can also be cooled to further reduce the heat load emitted towards the deposition area. Arrows illustrates the evaporated source material exiting the distribution assembly 124. According to embodiments herein, the evaporation source typically includes a plurality of outlets distributed along a length direction of the evaporation source. For instance, the evaporation source may include 30 or more outlets, such as, for instance, at least 50 outlets, which may be spaced apart from each other by a distance of, for example, 2 cm. According to embodiments herein, the shielding device delimits the distribution cone or plume of evaporated source material distributed towards the substrate. Typically, the shielding device is configured to block at least a portion of the evaporated source materials.
[0027] The three distribution pipes shown in FIG. 2, which are provided at an evaporator control housing 212 adjacent to the distribution pipes are, for example, connected thereto via a thermal insulator 214. The evaporator control housing is configured to maintain an atmospheric pressure within the evaporator control housing and is configured to house at least one element selected from the group consisting of: A switch, a valve, a controller, a cooling unit, a cooling control unit, a heating control unit, a power supply, and a measurement device. In embodiments herein, a component for operating the evaporation source for the evaporation source array can be provided under atmospheric pressure close to the evaporation crucible and the distribution pipe and can be moved through the deposition apparatus together with the evaporation source.
[0028] According to embodiments described herein, a deposition source assembly may have at least one crucible and a corresponding distribution assembly. For OLED manufacturing, two, three, four or more pairs of crucibles and corresponding distribution assemblies may be provided. Having three crucibles and three corresponding distribution assemblies is advantageous for co-evaporation of a plurality of OLED materials forming one OLED layer on a substrate.
[0029] According to some embodiments, which can be combined with other embodiments described herein, the source material can be an organic material deposited on the substrate for the manufacture of an OLED device. The source material can be vaporized to form a gaseous source material by evaporation or sublimation. It is to be understood that sublimation may be utilized for some materials and, depending on the material, the term "evaporation" used herein is to be understood as including the option of sublimation.
[0030] Embodiments described herein provide a deposition source assembly with a body or deposition source having a source material reservoir, and a heater to vaporize the source material into a gas, by at least one of evaporation and sublimation of the source material. The body can extend horizontally and gaseous source material exit(s), e.g. openings, are included on a side of the body, i.e. a distribution assembly. In operation, only the source exit(s) on one side of the source are exposed to the gaseous source material as the source and substrate move relatively to one another.
[0031 ] To achieve a sufficient evaporation without reaching the boiling point of the evaporation material, the evaporation process is carried out in a vacuum environment. The principle of the evaporation deposition (or sublimation deposition) typically includes three phases: The first phase is the evaporating phase in which the material to be evaporated is heated in a crucible to an operating temperature. The operating temperature is set to create sufficient vapor pressure to move material from the crucible to the substrate. The second phase is the transport phase in which the vapor is moved from the crucible through, for example, a steam distribution pipe with nozzles onto a substrate for providing an even layer of the vapor onto the substrate. The third phase is the condensation phase in which the surface of the substrate has a lower temperature than the evaporated material which allows the vaporized material to adhere to the substrate.
[0032] According to embodiments described herein, a deposition source, for example a source for evaporation or sublimation of source material, is transported in a process chamber or a deposition system. Further, substrate carriers or substrates, respectively, and mask carriers or masks, respectively, are transported in a process chamber or a deposition system. In order to reduce particle generation, it is beneficial if one or more of the deposition source, the substrates or substrate carriers, and the mask or mask carriers are transported with contactless levitation transportation, such as magnetic levitation transportation. The term "contactless" as used throughout the present disclosure can be understood in the sense that the weight of an element employed in the processing system, e.g. a deposition source assembly, a carrier or a substrate, is not held by a mechanical contact or mechanical forces, but is held by a magnetic force. The substrate support assembly can have a first portion, i.e. a first magnet levitation assembly, providing a first substrate position and a second portion, e.g. a separate second portion, i.e. a second magnetic levitation assembly, providing the second substrate position. The substrate support assembly may be a common support assembly, i.e. a common magnetic levitation assembly, providing the first and the second substrate position. According to some embodiments, which can be combined with other embodiments described herein, the substrate support assembly can further be configured to transport the substrate, e.g. in a levitated state.
[0033] Specifically, the deposition source assembly or the carrier assembly is held in a levitating or floating state using magnetic forces instead of mechanical forces. As an example, the transportation apparatus described herein may have no mechanical means, such as a mechanical rail, supporting the weight of the deposition source assembly. In some implementations, there can be no mechanical contact between the deposition source assembly and the rest of the transportation apparatus at all during movement of the deposition source past the substrate. [0034] With exemplary reference to FIG. 3, a transportation apparatus for contactless transportation of a deposition source assembly is described. Typically, the transportation apparatus is arranged in a vacuum chamber of a deposition apparatus as described herein. In particular, the transportation apparatus is configured for contactless levitation, transportation and/or alignment of the deposition source. The contactless levitation, transportation and/or alignment of the deposition source is beneficial in that no particles are generated during transportation, for example due to mechanical contact with guide rails.
[0035] A further advantage, as compared to mechanical means for guiding the deposition source, is that embodiments described herein do not suffer from friction affecting the linearity of the movement of the deposition source along the substrate to be coated. The contactless transportation of the deposition source allows for a frictionless movement of the deposition source, wherein a target distance between the deposition source and the substrate can be controlled and maintained with high precision and speed. Further, the levitation allows for fast acceleration or deceleration of the deposition source speed and/or fine adjustment of the deposition source speed. Accordingly, the processing system as described herein provides for an improved layer uniformity, which is sensitive to several factors, such as e.g. variations in the distance between the deposition source and the substrate, or variations in the speed at which the deposition source is moved along the substrate while emitting material.
[0036] Further, the material of mechanical rails typically suffers from deformations which may be caused by evacuation of a chamber, by temperature, usage, wear, or the like. Such deformations affect the distance between the deposition source and the substrate, and hence affect the uniformity of the deposited layers. In contrast, embodiments of the transportation apparatus as described herein allow for a compensation of any potential deformations present, e.g. in the guiding structure. More specifically, the apparatus can be configured for a contactless translation of the deposition source assembly along a vertical direction, e.g. the y-direction, and/or along one or more transversal directions, e.g. the x- direction and z-direction, as described in more detail with reference to FIG. 3. An alignment range for the deposition source may be 2 mm or below, more particularly 1 mm or below. [0037] In the present disclosure, the terminology of "substantially parallel" directions may include directions which make a small angle of up to 10 degrees with each other, or even up to 15 degrees. Further, the terminology of "substantially perpendicular" directions may include directions which make an angle of less than 90 degrees with each other, e.g. at least 80 degrees or at least 75 degrees. Similar considerations apply to the notions of substantially parallel or perpendicular axes, planes, areas or the like.
[0038] In particular, the transportation apparatus described herein can be used for vertical substrate processing. Therein, the substrate is vertically oriented during processing of the substrate, i.e. the substrate is arranged parallel to a vertical direction as described herein, i.e. allowing possible deviations from exact verticality. A small deviation from exact verticality of the substrate orientation can be provided, for example, because a substrate support with such a deviation might result in a reduced particle adherence on a substrate surface. An essentially vertical substrate may have a deviation of 15° or below from the vertical orientation.
[0039] As exemplarily illustrated in FIG. 3, the transportation apparatus typically includes a deposition source assembly 330 including a deposition source 352 as described herein and a source support 351 for supporting the deposition source. In particular, the source support 351 may be a source cart. The deposition source 352 may be mounted to the source support. As indicated by the arrows in FIG. 3, the deposition source is adapted for emitting material for depositing on the first substrate 132. Further, as exemplarily shown in FIG. 3, a mask 336 may be arranged between the substrate and the deposition source 352. The mask can be provided for preventing deposition of material emitted by the deposition source on one or more regions of the substrate. For example, the mask may be an edge exclusion shield configured for masking one or more edge regions of the substrate, such that no material is deposited on the one or more edge regions during the coating of the substrate. As another example, the mask may be a shadow mask for masking a plurality of features, which are deposited on the substrate with the material from the deposition source assembly.
[0040] Further, with exemplary reference to FIG. 3, the deposition source assembly 330 may include a first active magnetic unit 341 and a second active magnetic unit 342. The transportation apparatus typically further includes a guiding structure 370 extending in a deposition source transportation direction. The guiding structure370 may have a linear shape extending along the source transport direction. The first active magnetic unit 341 , the second active magnetic unit 342 and the guiding structure 370 are configured for providing a first magnetic levitation force Fl and a second magnetic levitation force F2 for levitating the deposition source assembly.
[0041 ] In the present disclosure, an "active magnetic unit" or "active magnetic element", may be a magnetic unit or magnetic element adapted for generating an adjustable magnetic field. The adjustable magnetic field may be dynamically adjustable during operation of the transportation apparatus. For example, the magnetic field may be adjustable during the emission of material by the deposition source for deposition of the material on the substrate and/or may be adjustable between deposition cycles of a layer formation process. Alternatively or additionally, the magnetic field may be adjustable based on a position of the deposition source assembly with respect to the guiding structure. The adjustable magnetic field may be a static or a dynamic magnetic field. According to embodiments, which can be combined with other embodiments described herein, an active magnetic unit or element can be configured for generating a magnetic field for providing a magnetic levitation force extending along a vertical direction. Alternatively, an active magnetic unit or element may be configured for providing a magnetic force extending along a transversal direction, e.g. an opposing magnetic force as described below. For instance, an active magnetic unit or active magnetic element as described herein, may be or include an element selected from the group consisting of: An electromagnetic device, a solenoid, a coil, a superconducting magnet, or any combination thereof.
[0042] As exemplarily shown in FIG. 3, during operation of the transportation apparatus, at least a portion of the guiding structure 370 may face the first active magnetic unit 341. The guiding structure 370 and/or the first active magnetic unit 341 may be arranged at least partially below the deposition source 352. The source hangs below the guiding structure, i.e. a linear guiding element. The guiding structure 370 may be a static guiding structure which can be statically arranged in the vacuum process chamber. In particular, the guiding structure may have magnetic properties. For example, the guiding structure 370 may be made of a magnetic material, e.g. a ferromagnetic, particularly ferromagnetic steel. Accordingly, the guiding structure may be or include a passive magnetic unit. [0043] The terminology of a "passive magnetic unit" or "passive magnetic element" is used herein to distinguish from the notion of an "active" magnetic unit or element. A passive magnetic unit or element may refer to a unit or an element with magnetic properties which are not subject to active control or adjustment. For instance, a passive magnetic unit or element may be adapted for generating a magnetic field, e.g. a static magnetic field. A passive magnetic unit or element may not be configured for generating an adjustable magnetic field. Typically, a passive magnetic unit or element may be a permanent magnet or have permanent magnetic properties.
[0044] According to embodiments, which can be combined with other embodiments described herein, the first active magnetic unit may be configured for generating a first adjustable magnetic field for providing a first magnetic levitation force Fl . The second active magnetic unit may be configured for generating a second adjustable magnetic field for providing a second magnetic levitation force F2. The apparatus may include a controller 355 configured for individually controlling the first active magnetic unit 341 and/or the second active magnetic unit 342 for controlling the first adjustable magnetic field and/or the second adjustable magnetic field for aligning the deposition source. More specifically, the controller 355 may be configured for controlling the first active magnetic unit and the second active magnetic unit for translationally aligning the deposition source in a vertical direction. By controlling the first active magnetic unit and the second active magnetic unit, the deposition source assembly may be positioned into a target position. Further, the deposition source assembly may be maintained in the target position under the control of the controller.
[0045] The rotational degree of freedom provided by the individual controllability of the first active magnetic unit 341 and of the second active magnetic unit 342 allows for controlling an angular orientation of the deposition source assembly 330 with respect to the first rotation axis 334. Under the control of the controller 355, a target angular orientation may be provided and/or maintained.
[0046] A further active magnetic unit 343 may be arranged at the first side 333A of the first plane 333. In operation, the further active magnetic unit 343 may face a first portion 371 of the guiding structure 370 and/or may be provided at least partially between the first plane 333 and the first portion 371. Typically, the first passive magnetic unit 345 and the guiding structure 370 are configured for providing a first transversal force Tl .
[0047] In particular, the first passive magnetic unit 345 may be configured for generating a magnetic field. The magnetic field generated by the first passive magnetic unit 345 may interact with the magnetic properties of the guiding structure 370 to provide for the first transversal force Tl acting on the deposition source assembly 330. The first opposing force Ol may counteract the first transversal force Tl such that the net force acting on the deposition source assembly 330 along a transversal direction, e.g. the z-direction, is zero. Accordingly, the deposition source assembly 330 may be held without contact at a target position along a transversal direction.
[0048] As illustrated in FIG. 3, the controller 355 may be configured for controlling the further active magnetic unit 343. The control of the further active magnetic unit 343 may include a control of an adjustable magnetic field generated by the further active magnetic unit 343 for controlling the first opposing transversal force O l . Controlling the further active magnetic unit 343 may allow for a contactless alignment of the deposition source 352 along a transversal direction, e.g. the z-direction.
[0049] According to some embodiments of transportation apparatus, a passive magnetic drive unit may be provided at the guiding structure. For example, the passive magnetic drive unit can be a plurality of permanent magnets, particularly a plurality of permanent magnets forming a passive magnet assembly with varying pole orientation. The plurality of magnets can have alternating pole orientation to form the passive magnet assembly. An active magnetic drive unit can be provided at or in the source assembly, e.g. the source support 351. The passive magnetic drive unit and the active magnetic drive unit can provide the drive, e.g. a contactless drive, for movement along the guiding structure, while the source assembly is levitated.
[0050] A source cart, according to embodiments which can be combined with other embodiments described herein can include further active magnetic units such as at least one of: A first active magnetic unit 341 , a second active magnetic unit 342, a third active magnetic unit, a fourth active magnetic unit, a fifth active magnetic unit, a sixth active magnetic unit, a first passive magnetic unit 345, a second passive magnetic unit, or any combination thereof.
[0051 ] By controlling the first active magnetic unit, the second active magnetic unit, the third active magnetic unit and the fourth active magnetic unit, the deposition source may be translationally aligned along a vertical direction. Under the control of the controller, the deposition source may be positioned in a target position along a vertical direction, e.g. the y-direction.
[0052] By controlling, in particular individually controlling, the first active magnetic unit, the second active magnetic unit, the third active magnetic unit and the fourth active magnetic unit, the deposition source assembly may be rotated around the first rotation axis. Similarly, by controlling the units, the deposition source assembly may be rotated around the second rotation axis. The control of the active magnetic units allows for controlling the angular orientation of the deposition source assembly with respect to the first rotation axis and the angular orientation with respect to the second rotation axis for aligning the deposition source. Accordingly, two rotational degrees of freedom for angularly aligning the deposition source can be provided.
[0053] FIG. 4 shows a deposition apparatus 400. The deposition apparatus 400 includes a vacuum chamber 1 10 for processing two or more substrates therein. Further, the deposition apparatus includes one or more maintenance chambers, for example for maintenance of a deposition source assembly 120. The deposition apparatus includes a transfer chamber 450. The deposition apparatus includes two loading chambers 442.
[0054] A first substrate 132 and a second substrate 134 are arranged side by side, i.e. within one plane, in the vacuum chamber 1 10 a deposition source assembly 120 guiding evaporated source material 420 in a deposition direction is moved along the first and the second substrate back and forth along the linear guiding element 122. The first substrate 132 and/or the second substrate 134 can be a mask with respective masks 136/138. During deposition of evaporated source material onto the first substrate and the second substrate, the deposition source material guides evaporated source material along the deposition direction. According to some embodiments, which can be combined with other embodiments described herein, deposition of evaporated source material is continuously provided in the same direction, i.e. the deposition direction, for depositing material on substrates during operation.
[0055] According to some embodiments, which can be combined with other embodiments described herein, at least a first maintenance chamber 430 is provided. The maintenance chamber allows for the transference of a deposition source assembly 120 from the maintenance chamber 432 the vacuum chamber 1 10 and vice versa. The maintenance chamber 430 includes a further linear guiding element 422. The further linear guiding element 422 is provided along a linear path of the linear guiding element 122. Accordingly, a deposition source assembly 120 can be moved from the linear guiding element 122 to the further linear guiding element 422 or from the further linear guiding element 422 to the linear guiding element 122. The maintenance chamber 430 further includes a door 433, which can be opened, for example, after the valve 431 has been closed. Opening the valve 431 allows for providing a passage for a deposition source assembly 120 from the maintenance chamber 430 to the vacuum chamber 1 10 and vice versa. After closing the valve 431 , the maintenance chamber can be vented without disturbing the vacuum in the vacuum chamber 1 10.
[0056] FIG. 4 shows a maintenance chamber 430 and a second maintenance chamber 432. Each of the maintenance chambers has a further linear guiding element 422 for movement of an evaporation source assembly. According to some embodiments, a first maintenance chamber 430 can be provided for loading a deposition source assembly 120 from the maintenance chamber to the vacuum chamber 1 10. A second maintenance chamber 432 can be provided for loading a deposition source assembly 120 from the vacuum chamber 1 10 to the second maintenance chamber 432. The second maintenance chamber 432 includes a door 433. Each of the maintenance chambers are connected with a valve 431 to the vacuum chamber 1 10.
[0057] According to some embodiments, which can be combined with other embodiments described herein, a deposition apparatus for evaporating source material may include one maintenance chamber or may include two or more maintenance chambers. The maintenance chambers can be used for maintenance of the source. Particularly, the stores operation can be ramped up in the maintenance chamber. This may take several ten minutes and even up to an hour. The ready to use deposition source assembly can then be loaded into the vacuum chamber 1 10. Loading a ready to use deposition source assembly reduces downtime of the deposition apparatus 400.
[0058] FIG. 4 shows two loading chambers of 442. According to embodiments described herein, which can be combined with other embodiments, the first loading chamber is provided adjacent to the deposition area configured for a first substrate 132 and a second loading chamber is provided adjacent to a second deposition area configured for a second substrate 134. The loading chambers 442 can be connected to the vacuum chamber 1 10 by valves 142, for example slit valves. The loading chambers 442 can be configured for including at least a first support track 456 and a second support track 458. The first track 456 corresponds to a substrate support track which is configured for supporting substrates or a carrier having the substrates provided on a carrier. The second support track 458 corresponds to a mask support track which is configured for supporting masks or a carrier having the mask provided on a carrier.
[0059] According to embodiments of the present disclosure, which can be combined with other embodiments described herein, loading of substrates and/or masks (or respective carriers) is provided in a direction parallel to the substrate support plane. The loading chambers 442 are further connected to a transfer chamber 450. Loading of substrates from the loading chambers to the transfer chamber and vice versa is provided in a direction perpendicular to the substrate support plane. According to some embodiments, which can be combined with other embodiments described herein, the transfer chamber 450 and the loadings chamber 442 can be provided to form one vacuum region or can be different vacuum regions.
[0060] According to some embodiments, the loading chambers 442 may include further valves 443 for the loading and unloading of masks or carriers supporting the masks on the second support track 458.
[0061 ] A substrate or a carrier supporting a substrate can be moved through a deposition system including the deposition apparatus 400 along support track 452. Portions of the support track 452 may be provided in a dual track configuration having the support track 452 and a further support track 454. The dual track configuration of portions of the support track allows for moving processed substrates out of the loading chamber 442 into the transfer chamber 450 and simultaneously moving and process substrates from the transfer chamber 450 into the loading chamber 442. Additionally or alternatively, the dual track configuration of portions of the support track 452 can allow for moving masks or carriers having masks supported on carriers into the loading chambers 442 from the transfer chamber 450 and/or moving masks or carriers having masks supported on carriers out of the loading chamber 442 into the transfer chamber 450. Embodiments allowing a transfer of masks via the transfer chamber 450 may omit the further valves 443.
[0062] FIG. 5 shows a further deposition apparatus 400 without the further valves 443. In order to improve the traffic of masks or carriers supporting the mask in the transfer chamber 450, a dual track configuration having a support track 452 and a further support track 554 can be provided in the transfer chamber 450. Additionally or alternatively, embodiments may include a dual track configuration for a substrate support and for a mask support. Accordingly, some embodiments, which can be combined with other embodiments described herein, may include a transfer chamber having four support tracks, two support tracks for the loading and unloading of substrates and two support tracks for the loading and unloading of carriers.
[0063] FIG. 6 A shows a further modification of a deposition apparatus 400, which can be combined with other embodiments described herein. The loading chambers 642 are increased in size as compared to the loading chambers 442 shown in FIGS. 4 and 5. According to some embodiments, which can be combined with other embodiments described herein, a space 610 can be provided between the vacuum chamber 1 10 and the transfer chamber 450. This allows for providing an alignment system for aligning the mask and the substrate relative to each other at an outer wall of the vacuum chamber 1 10. A portion of the alignment system can be provided in the space 610, i.e. outside of a vacuum, particularly outside of the vacuum of the vacuum chamber 1 10 or a vacuum of the transfer chamber 450.
[0064] FIG. 6B shows a deposition system 600 for depositing evaporated material, for example, evaporated source material onto a plurality of substrates. The deposition system 600 includes a loading chamber 632. The loading chamber can be a swing module configured to rotate a substrate or a carrier supporting a substrate on the carrier from a horizontal orientation into a vertical orientation. The swing module configured to rotate the substrate or the carrier can be provided in a vacuum chamber. The deposition system 600 further includes a transfer chamber 450.
[0065] According to some embodiments, which can be combined with other embodiments described herein, the transfer chamber can include a first transportation track 634 configured to transport substrates or carriers supporting the substrates from the loading chamber two of rotation chamber 636. The rotation chamber 636 is configured to rotate the substrates or carriers supporting the substrate. Upon rotation of the substrates in the rotation chamber 636, the substrates or carriers supporting the substrates are moved from the first transportation track 634 to a second transportation track 638. The second transportation track 638 is configured to transport the substrates or carriers supporting the substrates from the rotation chamber 636 two and unloading chamber 639.
[0066] The unloading chamber can be a swing module configured to rotate a substrate or carrier supporting a substrate from the vertical orientation into a horizontal orientation. According to some embodiments, which can be combined with other embodiments described herein, substrates or carriers supporting the substrate can remain in a vertical orientation within the deposition system 600 between the loading chamber 632 and the unloading chamber 639.
[0067] According to optional modifications, which can be combined with other embodiments described herein, the first transportation track 634 and the second transportation track 638 may also be configured for transportation of substrate or carrier supporting substrates in directions opposite to the directions described above. For example, substrates or carriers can be transported back and forth on each of the transportation tracks. According to yet further embodiments, which can be combined with other embodiments described herein, each of the first transportation track 634 and the second transportation track 638 may further include a separate mask support track for supporting masks or carriers having masks on the carrier.
[0068] The deposition system 600 can include two or more vacuum chambers 1 10 for depositing two substrates in the vacuum chamber, wherein the substrates are arranged side by side and a deposition source assembly 120 provides a continuous deposition process by moving back and forth along a linear guiding element. FIG. 6B shows two vacuum chambers 1 10. Each vacuum chamber shows a first substrate 132 and a second substrate 134. In each vacuum chamber a first deposition area for the first substrate and the second deposition area for the second substrate are provided.
[0069] Further, each vacuum chamber shows a first mask 136 and a second mask 138. According to some embodiments, which can be combined with other embodiments described herein, in a vacuum chamber 1 10 a first mask support and the second mask support is provided.
[0070] Two loading chambers 442 are arranged on opposing sides of the vacuum chambers 1 10. The loading chambers have substrate support tracks, i.e. substrate transportation tracks, with a transport direction parallel to a substrate support plane of the vacuum chamber 110. A first deposition area in the vacuum chamber can be loaded with unprocessed substrates from one loading chamber 442. A second deposition area in the vacuum chamber can be loaded with unprocessed substrates from another loading chamber 442. According to some embodiments, which can be combined with other embodiments described herein, the loading chambers can include a dual track support configuration for substrates having a first track and a second track. Having a dual track configuration allows for the loading of unprocessed substrates and unloading of the processed substrates in a shorter time.
[0071 ] Additionally or alternatively, a dual track configuration can also provide for moving masks or mask carriers into and out of the vacuum chamber 1 10. According to yet further configurations, additional tracks, for example two additional tracks, can be provided for masks or mask carriers in the loading chambers 442.
[0072] As shown in FIG. 6B, a loading chamber 442 is provided between two vacuum chambers for processing a substrate side by side. The loading chamber 442 provided between the two vacuum chambers can load and unload substrates and/or masks to each of the two adjacent vacuum chambers 110. According to some embodiments, which can be combined with other embodiments described herein, a number of N vacuum chambers for processing substrates therein side by side can be provided and a number of N+l loading chambers for loading and unloading of substrates in the N vacuum chambers can be provided. [0073] A deposition system 600 may further include a maintenance chamber 430. The maintenance chamber 430 shown in FIG. 6B is provided between two vacuum chambers for processing a substrate. The maintenance chamber 430 is configured to maintain deposition source assembly 120. A ready to use deposition source assembly 120 can be moved from the maintenance chamber 430 into one of the vacuum chambers 1 10. For example, a rotating mechanism can be provided in the maintenance chamber 430 for rotating a ready to use deposition source assembly 120 in the source plane, i.e. the plane in which the source moves sweeping across two substrates back and forth. After the ready to use deposition source assembly has been rotated in the source plane, the deposition source assembly can be moved into one of the vacuum chambers.
[0074] FIG. 6C shows a further deposition apparatus for depositing evaporated material on two or more substrates. The deposition apparatus includes a vacuum chamber 1 10 having a first deposition area for a first substrate 132 and the second deposition area for a second substrate 134. The deposition areas are provided by a substrate support assembly (with two portions or as one common assembly) providing a first substrate position and a second substrate position. Further, a first support position for a first mask 136 and a second support position for a second mask 138 is provided. The maintenance chamber 430 for maintenance of deposition source assembly 120 is provided. For example, the maintenance chamber 430 can be adjacent to an area 61 1 between the first deposition area and the second deposition area. The area 61 1 can be considered a center area of the vacuum chamber 1 10. The first deposition area for a first substrate 132 and the second deposition area for a second substrate 134 are arranged side by side. The first deposition area and the second position area provide a substrate support plane. The substrate support plane can be vertical or slightly inclined, e.g. by 15° or less, to have downwardly facing substrates. The deposition source assembly 120 is moved back and forth along linear guiding element 122. This is indicated by arrow 622.
[0075] According to embodiments described herein, the maintenance chamber 430 can be vacuum sealed from the vacuum chamber 1 10, e.g. at dashed line 631 . A vacuum seal or a vacuum sealed door can be provided between the maintenance chamber 430 and the vacuum chamber 1 10. For the exchange of a deposition source assembly 120, the deposition source assembly 120 shown in the maintenance chamber 430 can be moved into the vacuum chamber 1 10 while the deposition source assembly shown in the vacuum chamber 1 10 is moved out of the vacuum chamber 1 10 and into the maintenance chamber 430. For example, this can be provided by a rotating mechanism. For operation of the rotating mechanism, the deposition source assembly 120 can be moved in an idle position. For example the idle position can be at a position at which the deposition source assembly 120 faces an idle shield 690. According to some embodiments, which can be combined with other embodiments described herein, the idle shield 690 can be moved out of the vacuum chamber 1 10 together with the deposition source assembly 120. The further idle shield 691 can be provided from the maintenance chamber into the vacuum chamber 1 10.
[0076] According to some embodiments, a control housing of the deposition source assembly (see for example reference numeral 212 in FIG. 2) can be connected to atmospheric pressure with a media supply arm 680. For example, the media supply arm 680 can be adjacent to the area 61 1 , e.g. a center area of the vacuum chamber 1 10.
[0077] The deposition apparatus shown in FIG. 6 C may further include a transfer chamber 450 and two loading chambers 442. The vacuum chamber 1 10 is provided between the two loading chambers 442. A first deposition area is adjacent to the first loading chamber and substrates are loaded into and loaded out of the first deposition area from the first loading chamber. The second deposition area is adjacent to the second loading chamber and the substrates are loaded into and loaded out of the second deposition area from the second loading chamber.
[0078] According to typical implementations, the loading chambers 442 include at least a first support track 456, e.g. a first transportation track, and a second support track 458, e.g. a second transportation track. Substrates and/or masks are moved from the loading chambers into the vacuum chamber as shown by arrows in FIG. 6C and parallel to a substrate support plane provided by the first deposition area and the second deposition area. The first support track and the second support track in a loading chamber can be utilized for a faster unloading and loading of substrates and/or may be utilized for the unloading or loading of masks. According to yet further modifications, which can be combined with other embodiments described herein, further support tracks, particularly a third support track and forth support track can be provided in a loading chamber. Having more than two support tracks allows for having individual tracks for substrate support and mask support. Accordingly, a dual track configuration may also be a multiple track configuration having two, three, four, or more tracks. According to some embodiments, which can be combined with other embodiments described herein, the dual track configuration or multiple track configuration can be moved from the loading chamber 442 into the transfer chamber 450. The transport assembly is configured to provide for a movement of the tracks in a direction perpendicular to a transport direction on the tracks from the loading chamber to the transfer chamber and vice versa.
[0079] FIG. 6D shows a further deposition apparatus for depositing evaporated material on two or more substrates. The deposition apparatus includes a vacuum chamber 1 10 having a first deposition area for a first substrate 132 and the second deposition area for a second substrate 134. As compared to some other embodiments described herein, the first deposition area and the second deposition area are provided on a side of the vacuum chamber 1 10 facing away from the transfer chamber 450. According to some embodiments, a deposition apparatus can be provided, wherein a linear guiding element 122 for supporting a deposition source assembly 120 is provided between a substrate support assembly and a chamber wall adjacent to a the transfer chamber 450 or between a substrate support assembly and the transfer chamber 450. This may be beneficial as an alignment of a substrate supported on the substrate support assembly and a mask supported on a mask support assembly can be easier to access from an outer wall of the vacuum chamber 1 10, e.g. the lower wall of vacuum chamber in FIG. 6D.
[0080] The deposition areas are provided by a substrate support assembly (with two portions or as one common assembly) providing a first substrate position and a second substrate position. Further, a first support position for a first mask 136 and a second support position for a second mask 138 is provided. A maintenance chamber 430 for maintenance of deposition source assembly 120 is provided. For example, the maintenance chamber 430 can be adjacent to an area between the first deposition area and the second deposition area. The area can be considered a center area of the vacuum chamber 1 10. The first deposition area for a first substrate 132 and the second deposition area for a second substrate 134 arranged side by side. The first deposition area and the second position area provide a substrate support plane. The substrate support plane can be vertical or slightly inclined, e.g. by 15° or less, to have downwardly facing substrates. The deposition source assembly 120 is moved back and forth along linear guiding element 122. This is indicated by arrow 622.
[0081 ] According to embodiments described herein, the maintenance chamber 430 can be vacuum sealed from the vacuum chamber 1 10. For example, optional gate valves may be provided to seal the deposition area in vacuum chamber 1 10 from the maintenance chamber 430. A vacuum seal or a vacuum sealed door can be provided between the maintenance chamber 430 and the vacuum chamber 1 10. The maintenance chamber can be provided according to any of the other embodiments described herein, e.g. embodiments described with respect to FIG. 6C.
[0082] The deposition apparatus shown in FIG. 6D may further include a transfer chamber 450 and two loading chambers 442. The vacuum chamber 1 10 is provided between the two loading chambers 442. A first deposition area is adjacent to the first loading chamber and substrates are loaded into and loaded out of the first deposition area from the first loading chamber. The second deposition area is adjacent to the second loading chamber and substrate are loaded into and loaded out of the second deposition area from the second loading chamber.
[0083] According to typical implementations, the loading chambers 442 can have at least a first support track 452, e.g. a first transportation track, and a second support track 454, e.g. a second transportation track, moved into the loading chamber, e.g. from the transfer chamber 450. Substrates and/or masks are moved from the loading chambers into the vacuum chamber parallel to a substrate support plane provided by the first deposition area and the second deposition area. According to yet further modifications, which can be combined with other embodiments described herein, further support tracks, particularly a third support track and fourth support track can be provided in a loading chamber. Having more than two support tracks allows for having individual tracks for substrate support and mask support. Accordingly, a dual track configuration may also be a multiple track configuration having. two, three, four, or more tracks. According to some embodiments, which can be combined with other embodiments described herein, the dual track configuration or multiple track configuration can be moved from the loading chamber 442 into the transfer chamber 450 and vice versa. [0084] FIG. 7A shows a further deposition system 600. The deposition system includes the loading chamber 632 and an unloading chamber 639. Alternatively, the loading chamber can be an unloading chamber and the unloading chamber can be a loading chamber. Further, boast chambers can be provided for loading and unloading. The loading chamber and the unloading chamber include a swing module for rotating from a horizontal orientation in a vertical orientation and vice versa.
[0085] The deposition system 600 includes a plurality of deposition apparatuses 400. The deposition apparatuses can be provided with one or more of the details and aspects of the other deposition apparatuses described herein, particularly as described with respect to FIGS 4, 5, 6A, and 6C. The transfer chambers of the deposition apparatuses are arranged in a line to allow for substrate and carrier transportation through the transfer chamber, e.g. adjacent transfer chambers. Further, it may be possible that two or more vacuum chambers (see e.g. vacuum chamber 1 10 in FIGS 4, 5, 6A, and 6C) of the deposition apparatuses have a common transfer chamber. One layer of, for example, organic material, can be provided in each of the deposition apparatuses 400. Accordingly, a device, such as an OLED display can be manufactured layer by layer while the substrate moves through the deposition system through the various deposition apparatuses. The deposition system 600 further includes rotating chamber 710 for rotating transportation tracks provided in the rotating chambers by e.g. 90°, 180°, 270° or 360°. According to some embodiments, which can be combined with other embodiments described herein, the rotating chambers can have a number of support track source transportation tracks, which correspond to the number of tracks in the transfer chambers. For example, the correspondence of numbers can be such that the rotation chamber has twice as many tracks as a transfer chamber. This allows for transporting substrates and/or masks from the transportation direction in one deposition apparatus to an opposite transportation direction in another deposition apparatus.
[0086] According to some embodiments, which can be combined with other embodiments described herein, the rotating chambers may further be connected to one or more mask storage chambers, i.e. a mask shelf chambers or mask buffer chambers. The storage buffer chambers hold a plurality of masks, which may be regularly exchanged in the vacuum chambers of the deposition apparatuses. FIG. 7A shows three mask storage chambers 720. Providing two or more mask storage chambers allows for improved mask traffic within the deposition system. Further, the mask buffer chambers may include a slit valve for transferring masks into and out of cleaning chambers or load lock chambers, i.e. chambers.
[0087] FIG. 7B shows a further deposition system including two or more deposition apparatuses 400. The deposition apparatuses 400 have loading chambers on respective sides of the substrate positions being arranged side by side in the vacuum chamber. The loading chambers are connected to a transfer chamber 450. Substrates and/or carriers can be moved from the transfer chamber 450 into the loading chamber by moving the support tracks perpendicular to a transportation direction of the support tracks. The system shown in FIG. 7B exemplarily includes two mask storage chambers 720 connected to a rotating chamber 710. The support tracks in the rotating chamber can be rotated to have a transport direction facing the mask storage chambers. A mask can be loaded onto the support tracks in the rotating chamber. The rotating chamber can rotate the support tracks, i.e. transportation tracks, by 90°. A mask can be transferred into the transfer chamber, i.e. along a support track 452, a further support track 454 or a further track 750. For example, the further track 750 can be provided for easier mask traffic within the deposition system. According to some embodiments, which can be combined with other embodiments described herein, loading chambers may also have a first support track 456, a second support track 458 and an additional support track.
[0088] FIGS. 8A to 8H illustrate a deposition apparatus for depositing material on two substrates side by side, i.e. with substrates edges facing each other. The apparatus includes a vacuum chamber for processing, i.e. deposition, of the two substrates, loading chambers 442 adjacent to respective substrates positioned in the vacuum chamber and the transfer chamber 450. The transfer chambers 450 include a support track 452 for transporting substrates through the deposition system. Further, the support track 452 has portions with dual track configuration, wherein a second track 454 is provided. As illustrated in FIGS. 8A to 8H, a support track portion with dual track configuration can be moved from the transfer chamber 450 into the loading chamber 442. According to some embodiments, a support track portion with a dual track configuration can be moved from one chamber to the adjacent chamber, for example from a transfer chamber to a loading chamber. According to other embodiments, both the transfer chamber and loading chamber may include one or more support tracks, for example support tracks with a single track configuration, a dual track configuration, a triple track configuration or higher track configurations. Carriers for substrates and/or mask may be transferred by switching between tracks or by moving tracks from one chamber to another chamber. The above embodiments are not to be understood exclusive to each other and may be combined such that one chamber includes one or more tracks while further tracks are moved into the chamber.
[0089] In FIG. 8A, a substrate S I is in a first substrate position, i.e. in a first deposition area, for example on a substrate support. The substrate support may provide the substrate S I in a levitated state in the first deposition area. The first mask 136 is provided between the deposition source assembly 120 and the substrate S I . A substrate S2 is provided in a second substrate position, i.e. in a second deposition area, for example on a substrate support. The substrate support may provide the substrate S2 in the levitated state in the second deposition area. Throughout FIGS. 8A to 8H the deposition source assembly 120 moves along the linear guiding element 122 between two end positions sequentially along the first deposition area and the second deposition area. The deposition source assembly 120 moves in a first direction 801 and in a second direction 802 opposite to the first direction 801.
[0090] In FIG. 8A, the substrate S I has been processed by one complete sweep with evaporated material. A movement of the deposition source assembly 120 from the right- hand side to the left-hand side has deposited material on about a half of the substrate SI . While the substrate S I is processed, the portion with the dual track configuration of the support track of the transfer chamber is moved into the loading chamber 442 on the right- hand side as indicated by arrow 81 1. As shown in FIG. 8B, the support track portion with the dual track configuration has a substrate S3 loaded thereon. The substrate S3 is moved past a slit valve in a plane of the first deposition area. An empty support track is provided in a substrate support plane, i.e. a plane of the first deposition area. As indicated by arrow 812, the processed substrate S I can be moved on the support track 454. At this time, the evaporation of source material onto the substrate SI has been completed. The deposition source assembly 120 continues to move along the first direction 801 and starts to deposit the second substrate S2. In FIG. 8C a first half of the second substrate is two has been deposited with a first sweep. The first substrate S2 has been loaded on support track 454 and the portion of the support track with dual track configuration can be moved from the loading chamber 442 to the transfer chamber 450 as indicated by arrow 813.
[0091 ] In FIG. 8D, the first substrate S I is aligned with the support track 452 and can be moved to a downstream process as indicated by arrow 81 5. The third substrate S3 is aligned with the substrate support assembly in the vacuum chamber 1 10 and the third substrate S3 can be moved in the first deposition area. The deposition source assembly has completed one sweep of substrate S2 and moves backward to sequentially pass by the second deposition area and the first deposition area. In FIG. 8E, a fourth substrate S4 has been loaded from a downstream process onto the portion of the support track 452 having the dual track configuration. The substrate S4 is moved as indicated by arrow 816 into the loading chamber 442 adjacent to the second deposition area, e.g. the left loading chamber in FIGS. 8A to 8H. FIG. 8E further illustrates that the deposition source assembly deposited about one half of substrate S2 while moving along the second direction 802. In FIG. 8F, the processing of the substrate S2 has been completed, the substrate is moved as indicated by arrow 817 onto a track of the portion of the support track having the dual track configuration. In this position, the substrate S4 has been moved past a slit valve being in line with a substrate support assembly in the vacuum chamber, e.g. the plane of the second deposition area.
[0092] In FIG. 8G, processing of the substrate S3 in the first deposition area has started while the deposition source assembly continues to move along the second direction. The dual track configuration portion of the support track moves as indicated by arrow 818 in order to align the substrate S2 with support track 452 and substrate S4 with the substrate support assembly of the vacuum chamber. In FIG. 8H, the substrate S2 can be moved to a downstream process as indicated by arrow 820 and the substrate S4 can be moved into the vacuum chamber as indicated by arrow 819.
[0093] Fig. 9 shows a further deposition apparatus 900 for depositing evaporated material or evaporated source material, respectively, on two or more substrates. The deposition apparatus includes a vacuum chamber 901 and a substrate support assembly providing a first deposition area for a first substrate 132 and a second deposition area for a second substrate 134. The first deposition area and the second deposition area are arranged side by side. That is, the edges of the first substrate 132 and the second substrate 134 face each other. A deposition source assembly 120 for evaporating source material is configured to move along a first direction to sequentially deposit at the first position area and the second deposition area and, thereafter, along a second direction opposite to the first direction to sequentially deposit at the second deposition area and the first deposition area.
[0094] A first mask 136 is provided between the deposition source assembly and the first deposition area providing a substrate position for the first substrate 132. A second mask 138 is provided between the deposition source assembly and the second deposition area providing a substrate position for the second substrate 134. Similarly to previous embodiments, maintenance chambers 430 are provided, for example on each side of the vacuum chamber 901. Details, aspects and implementations of the maintenance chamber described herein can be combined with embodiments of a deposition apparatus 900 as exemplarily described with respect to fig. 9.
[0095] According to some embodiments, which can be combined with other embodiments described herein, a plurality of support tracks can be provided in the vacuum chamber 901. Further, one or more slit valves can be provided on each side of the vacuum chamber 901 . Fig. 9 shows a first slit valve 91 1 for receiving masks and substrates from downstream processes and a second slit valve 912 for moving masks and substrates to upstream processes. This is indicated by the arrows in fig. 9. Further, for each of the deposition areas, a dual track support is provided having a first track 922 and a second track 924. The dual track support can be moved between the front position shown in fig. 9 and a rear position indicated by the rear track 928. Substrates can be moved through a deposition system on each of the first support track 922, the second support track 924 and the rear track 928. Further, a mask can be moved through a deposition system on the masks track.
[0096] Figures 10A to 10H illustrate operation of the deposition system having two or more deposition apparatuses 900 illustrated in fig. 9. Figures 10A to 10H show a transfer chamber 1050, the first vacuum chamber 901 and a second vacuum chamber 901. Each of the vacuum chambers has a first deposition area and the second deposition area. The respective substrate positions are denoted as position PI , position P2, position P3, and position P4. The left position in transfer chamber 1050 is denoted as P- l (not shown) and the right position in the transfer chamber 1050 is denoted as P0 (not shown). Each of the dual track supports for supporting substrates has a rear position R and a front position F, which are exemplarily shown in figures 10A and 10D. The rear position R and the front position F are provided in the other figures.
[0097] In fig. 10A all of the dual track supports are provided in the front position. The support tracks 922 are loaded with substrates. In the transfer chamber 1050 empty substrates are provided. In the left vacuum chamber 901 substrates receive a first layer while the deposition source assembly moves along the first direction 801. In the right vacuum chamber 901 substrates receive a second layer while the position source assembly moves along the first direction 801 . The deposition source assemblies deposit at the first deposition area, i.e. the right deposition areas P2 and P4. In fig. 10B, processing of the first deposition areas has been completed. A first layer has been deposited in position P2 and a further layer has been deposited in position P4. The dual track supports in position P0, P2, and P4 are moved into the rear position as indicated by the arrows. The deposition source assembly continues to move along the first direction 801 to process substrates in the positions PI and P3. In fig. IOC, the substrate on position P4 is moved to a downstream process. The substrate in position P2 is moved to the position P4. The substrate in position P0 is moved to the position P2 and a new substrate is loaded into position P0. During that time a substrate in position PI receives the first layer and a substrate in position P3 receives a second layer. In fig. 10D, the deposition source assembly has completed a first sweep across the substrate in position P I and P3 and moves into a second direction 802 opposite to the first direction 801. The dual track supports in positions P0, P2, and P4 are moved back to the front position as indicated by the arrows. In fig. 10E, the deposition source assembly has continued to provide a second sweep across the substrate in positions PI and P3. In fig. 10F, deposition of a first layer in position P I has been completed and deposition of a second layer in position P3 has been completed. Further, the dual track supports in positions P-l , P I , and P3 are moved to a rear position as indicated by the arrows. The deposition source assembly continues to move along the second direction 802 to sequentially pass along the second deposition area and the first deposition area, i.e. from position PI to P2 and from position P3 to P4. In fig. 10G the substrate on position P3 is moved to a downstream process. The substrate on position PI is moved to the position P3. The substrate on position P-l is moved to the position PI , and a new substrate is loaded in position P- 1. Further, the deposition source assembly continues to provide a first layer in the position P2 and a further layer in the position P4. In fig. 10H, deposition of a first half of the layer in position P2 and the first half of the layer in position P4 has been completed and the deposition source assembly moves along the first direction 801 , which is opposite to the second direction 802. The dual track supports in position P-l , PI , and P3 move back to the front position. Subsequently, the process can be continued as indicated by fig. 10A. Accordingly, a continuous deposition process can be provided in the vacuum chambers 901. A continuous evaporation process can be provided while alternatively depositing material in a first deposition area and a second deposition area, wherein the deposition direction remains essentially the same for depositing material on substrates.
[0098] FIG. 1 1 shows a deposition system for depositing evaporated material, for example, evaporated source material onto a plurality of substrates. The deposition system includes a loading chamber 632. The loading chamber can be a swing module configured to rotate a substrate or a carrier supporting a substrate on the carrier from a horizontal orientation into a vertical orientation. The swing module configured to rotate the substrate or the carrier can be provided in a vacuum chamber. The deposition system further includes a plurality of deposition apparatus 900, which may be operated as illustrated with respect to figures 10A to 10H. Upon being processed in a first row of deposition apparatuses, substrates can be loaded in a rotating chamber 710. The rotating chamber 710 can rotate by 180° to provide the substrates to a second row of deposition apparatuses. Further, one or more mask storage chamber 720 can be provided to the rotating chamber. The rotating chamber can receive masks from the mask storage chambers 720 or move masks to the mask storage chambers 720 by rotating by 90°. After completion of processing the substrates in the second row of deposition apparatuses, the substrate can be provided to unloading chamber 639. The unloading chamber can be a swing module configured to rotate a substrate or carrier supporting a substrate from the vertical orientation into a horizontal orientation. According to some embodiments, which can be combined with other embodiments described herein, substrates or carriers supporting ,the substrate can remain in a vertical orientation within the deposition system 600 between the loading chamber 632 and the unloading chamber 639. [0099] Fig. 12 shows a deposition system for depositing evaporated material. As compared to the deposition system described with respect to fig. 1 1 , a rotating chamber 710 is provided between deposition apparatuses 900 in order to reduce the distance of one or more of the mask storage chambers 720 from respective deposition chambers or deposition apparatuses 900, respectively. A further rotating chamber 710 is provided to move the substrates during processing from an incoming row of deposition apparatuses to an exiting row of deposition apparatuses.
[00100] Embodiments of the present disclosure refer to deposition of source material on two substrates, particularly deposition of source material on two substrates arranged next to each other, side by side, e.g. with a scanning source, i.e. a moving source. A first deposition area and a second deposition area are arranged side by side and a deposition source assembly for evaporating source material configured to move along a first direction to sequentially deposit at the first deposition area and the second deposition area and along a second direction opposite to the first direction to sequentially deposit at the second deposition area and the first deposition area. Accordingly, a continuous deposition process can be provided such that material utilization of a deposition source, particularly an evaporation source can be very high, e.g. about 80% or above. This advantage applies particular to an apparatus having a loading chamber adjacent to the first deposition area and a further loading chamber adjacent to the second deposition area, as described herein. . Further, systems as described herein including a transfer chamber or utilizing a process chamber as a transfer chamber allow for a small footprint, particularly a small footprint in one dimension allowing to meet the requirement of modern fabrication sites.
[00101 ] While the foregoing is directed to some embodiments, other and further embodiments may be devised without departing from the basic scope, and the scope is determined by the claims that follow.

Claims

1. A deposition apparatus for depositing evaporated source material on two or more substrates, comprising: a vacuum chamber; a substrate support assembly providing a first deposition area for a first substrate of the two or more substrates and a second deposition area for a second substrate of the two or more substrates, and wherein the first deposition area and the second deposition area are arranged side by side; and a deposition source assembly for evaporating source material configured to move along a first direction to sequentially deposit at the first deposition area and the second deposition area and along a second direction opposite to the first direction to sequentially deposit at the second deposition area and the first deposition area.
2. The deposition apparatus according, to claim 1 , further comprising: a linear guiding element configured to move the deposition source assembly along the first direction, particularly parallel to a substrate support plane provided by the first deposition area and the second deposition area which are arranged side by side .
3. The deposition apparatus according to claim 2, wherein the linear guiding element is configured to move the deposition source assembly within one source plane within the vacuum chamber.
4. The deposition apparatus according to any of claims 2 to 3, wherein the linear guiding element has a first endpoint and a second endpoint, and wherein moving the deposition source assembly along a first direction back in force is provided between the first endpoint and the second endpoint.
5. The deposition apparatus according to any of claims 2 to 4, wherein the source plane is defined by the first direction and the deposition source assembly providing a linear deposition source extending along a source extension direction different from the first direction.
6. The deposition apparatus according to any of claims 2 to 5, further comprising: a maintenance chamber coupled to the vacuum chamber having a further linear guiding element for moving the deposition source assembly from the linear guiding element to the further linear guiding element.
7. A deposition system for depositing evaporated source material on two or more substrates, comprising: a deposition apparatus according to any of claims 1 to 6; a mask storage chamber; and one or more support tracks configured to move a mask carrier from the mask storage chamber to the deposition apparatus.
8. The deposition system according to claim 7, further comprising: a maintenance chamber coupled to the vacuum chamber having a further linear guiding element for moving the deposition source assembly from the linear guiding element to the further linear guiding element.
9. The deposition system according to claim 7, further comprising: a second deposition apparatus according to any of claims 1 to 6; and a maintenance chamber coupled to the vacuum chamber having a further linear guiding element for moving the deposition source assembly from the linear guiding element to the further linear guiding element, wherein the maintenance chamber is provided between the deposition apparatus and the second deposition apparatus.
10. The depositions system according to any of claims 7 to 9, further comprising: a first loading chamber and a second loading chamber, wherein the first loading chamber and the second loading chamber are arranged side by side with the first deposition area and the second deposition area, and wherein the first deposition area and the second deposition area are arranged between the first loading chamber and the second loading chamber.
1 1 . The deposition system according to any of claims 7 to 10, further comprising: a transfer chamber having a support track, wherein the support track has at least one portion with a dual track configuration.
12. A deposition system for depositing evaporated source material on two or more substrates, comprising: two or more deposition apparatuses according to any of claims 1 to 6, wherein each of the deposition apparatuses have a substrate support track, a carrier support track and a transfer track, and wherein the substrate support tracks, the carrier support tracks and the transfer tracks of adjacent deposition apparatuses of the two or more deposition apparatus are arranged in a line; the deposition system further comprising: a maintenance chamber coupled to at least one vacuum chamber and having a further linear guiding element for moving the deposition source assembly from the linear guiding element to the further linear guiding element.
13. A method of depositing evaporated source material on two or more substrates, comprising: moving a first substrate of the two or more substrates in a vacuum process chamber; moving a deposition source assembly in a first direction while guiding gaseous source material in a deposition direction onto the first substrate; moving the deposition source assembly in a second direction opposite to the first direction while guiding gaseous source material in the deposition direction onto the first substrate; moving a second substrate of the two or more substrates in the vacuum process chamber while guiding gaseous source material in the deposition direction onto the first substrate; moving the deposition source assembly in the second direction while guiding gaseous source material in a deposition direction onto the second substrate; and moving the deposition source assembly in the first direction while guiding gaseous source material in the deposition direction onto the second substrate.
PCT/US2017/063304 2017-02-03 2017-11-27 Apparatus and method for continuous evaporation having substrates side by side WO2018144107A1 (en)

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