JP2019510129A - Apparatus and method for continuous evaporation with adjacent substrates - Google Patents

Abstract

A deposition apparatus for depositing evaporated raw material on two or more substrates is described. The deposition apparatus includes a vacuum chamber and a substrate support assembly that provides a first deposition region of a first substrate of two or more substrates and a second deposition region of a second substrate of two or more substrates. In addition, the first deposition region and the second deposition region are disposed adjacent to each other, and the deposition source assembly for evaporating the raw material is sequentially deposited in the first deposition region and the second deposition region. And moving along the second direction so that the second deposition region and the first deposition region are sequentially deposited along the first direction and opposite to the first direction. Yes.
[Selection] Figure 4

Description

[0001] Embodiments of the present disclosure relate to the deposition of raw materials on two substrates, in particular, using a scanning source, ie, a movable source, on two adjacent substrates. Relates to depositing. Embodiments of the present disclosure particularly relate to a deposition apparatus for depositing evaporated raw material on two or more substrates and a method for depositing evaporated raw material on two or more substrates.

[0002] Organic evaporators are tools for the production of organic light emitting diodes (OLEDs). An OLED is a special light emitting diode that includes a thin film of an organic compound with a light emitting layer therein. Organic light emitting diodes (OLEDs) are used in the manufacture of television screens for displaying information, computer monitors, cell phones, other portable devices, and the like. OLEDs can also be used for general space illumination. Since OLED pixels emit directly, the range of colors, brightness, and viewing angles possible with OLED displays is wider than that of conventional LCD displays. Thus, the energy consumption of an OLED display is significantly less than that of a conventional LCD display. Furthermore, in fact, OLEDs can be manufactured on flexible substrates, resulting in further applications. For example, a typical OLED display can include a layer of organic material disposed between two electrodes, all deposited on a substrate, so as to form a matrix display panel having individually energizable pixels. .

[0003] With regard to film layer formation on a substrate, the deposition throughput, the size of the deposition system, and in particular the footprint, use the same source for the deposition of film layers on different substrates in the same chamber. Can be improved. Such a system scans across the first substrate to deposit a film layer on the substrate and then rotates 180 degrees to form a film layer on the substrate to form a second layer in the chamber. Scanning evaporation can be used that scans across the substrate. Control of the source position within the chamber is difficult and the mechanism of the source scanning motion is further complicated by the need for source rotation.

[0004] In view of the foregoing, improvements to the evaporation source assembly, improvements to the deposition apparatus, or improvements to the processing system, including improvements to the deposition apparatus, respectively, are performed to deposit evaporated raw material on two or more substrates. It is beneficial to improve the method.

[0005] In one embodiment, a deposition apparatus is provided for depositing evaporated raw material on two or more substrates. The deposition apparatus includes a vacuum chamber and a substrate support assembly that provides a first deposition region of a first substrate of two or more substrates and a second deposition region of a second substrate of two or more substrates. In addition, the first deposition region and the second deposition region are disposed adjacent to each other, and the deposition source assembly for evaporating the raw material is sequentially deposited in the first deposition region and the second deposition region. And moving along the second direction so that the second deposition region and the first deposition region are sequentially deposited along the first direction and opposite to the first direction. Yes.

[0006] According to another embodiment, a deposition apparatus is provided for depositing evaporated raw material onto two or more substrates. The deposition apparatus includes a vacuum chamber and a substrate support assembly that provides a first deposition region of a first substrate of two or more substrates and a second deposition region of a second substrate of two or more substrates. Also, the first deposition region and the second deposition region are disposed adjacent to each other in the substrate support plane, and the deposition source assembly for evaporating the raw material moves back and forth along the first direction. And it is constituted so that it may pass in order along the 1st deposition field and the 2nd deposition field.

[0007] According to another embodiment, a deposition system is provided for depositing evaporated raw material onto two or more substrates. The deposition system includes a deposition apparatus according to any of the embodiments, examples and implementations described herein. The deposition system further includes a mask storage chamber and one or more support tracks configured to move the mask carrier from the mask storage chamber to the deposition apparatus.

[0008] According to another embodiment, a deposition system is provided for depositing evaporated raw material onto two or more substrates. The deposition system includes two or more deposition devices according to any of the embodiments, examples and implementations described herein, each of the deposition devices having a substrate support track, a carrier support track, and a transport track. Of the one or more deposition apparatuses, the substrate support track, the carrier support track, and the transfer track of the adjacent deposition apparatuses are arranged on one line. The deposition system further includes a maintenance chamber coupled to the at least one vacuum chamber and having a further linear induction element for moving the deposition source assembly from one linear induction element to yet another linear induction element.

[0009] In order that the above features may be understood in detail, a more specific description of the present disclosure, briefly outlined above, may be obtained by reference to embodiments. The accompanying drawings relate to embodiments and are described in the following description.

2 illustrates a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. 2 illustrates a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. 2 illustrates a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. 2 illustrates a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. 1 illustrates a deposition source assembly for use in a deposition apparatus and deposition method according to embodiments described herein. 2 illustrates a deposition source assembly and a movable mechanism of the deposition source assembly for use in a deposition apparatus and deposition method according to embodiments described herein. 2 illustrates a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. 2 illustrates a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. 2 illustrates a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. 1 illustrates a deposition system according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates, the deposition system having two or more deposition devices. 2 illustrates a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. 2 illustrates a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. 1 illustrates a deposition system according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates, the deposition system having two or more deposition devices. 1 illustrates a deposition system according to an embodiment of the present disclosure for sequential sequential deposition of two or more substrates, the deposition system having two or more deposition systems. FIG. 5 shows a sequence of operations in a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. FIG. 5 shows a sequence of operations in a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. FIG. 5 shows a sequence of operations in a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. FIG. 5 shows a sequence of operations in a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. FIG. 5 shows a sequence of operations in a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. FIG. 5 shows a sequence of operations in a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. FIG. 5 shows a sequence of operations in a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. FIG. 5 shows a sequence of operations in a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. 2 illustrates a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. FIG. 5 shows a sequence of operations in a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. FIG. 5 shows a sequence of operations in a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. FIG. 5 shows a sequence of operations in a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. FIG. 5 shows a sequence of operations in a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. FIG. 5 shows a sequence of operations in a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. FIG. 5 shows a sequence of operations in a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. FIG. 5 shows a sequence of operations in a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. FIG. 5 shows a sequence of operations in a deposition apparatus according to an embodiment of the present disclosure for continuous sequential deposition of two or more substrates. 1 illustrates a deposition system according to an embodiment of the present disclosure for sequential sequential deposition of two or more substrates, the deposition system having two or more deposition systems. 1 illustrates a deposition system according to an embodiment of the present disclosure for sequential sequential deposition of two or more substrates, the deposition system having two or more deposition systems.

[0010] Reference will now be made in detail to various embodiments, and one or more examples of those embodiments are illustrated in the drawings. Within the following description of the drawings, the same reference numbers refer to the same components. Generally, only the differences with respect to the individual embodiments are described. Each example is provided by way of explanation only and is not meant as a limitation. Furthermore, features illustrated and described as part of one embodiment may be used in other embodiments or in combination with other embodiments. Thereby, yet another embodiment is created. This description is intended to include such modifications and variations.

[0011] Embodiments described herein relate specifically to the deposition of organic materials on large area substrates, for example, for OLED display manufacturing. According to some embodiments, a large area substrate, or a carrier that supports one or more substrates, ie, a large area carrier, may have a size of at least 0.174 m ² . Typically, the size may be from about 1.4 m ² to about 8 m ² , more typically from about ² m ² to about 9 m ² , or up to 12 m ² . Typically, a rectangular area is a carrier having a size for a large area substrate as described herein, where the substrate is supported and a holding arrangement, apparatus and method according to embodiments described herein are provided. is there. For example, a large area carrier that would correspond to the area of a single large area substrate, corresponding to the substrate of about ^{1.4m 2 (1.1m × 1.3m) GEN5} , about 4.29M ² substrate ( GEN 7.5 corresponding to 1.95 m × 2.2 m), GEN 8.5 corresponding to about 5.7 m ² substrate (2.2 m × 2.5 m), or about 8.7 m ² substrate (2.85 m) GEN10 corresponding to x3.05 m). Further generations such as GEN11 and GEN12 and corresponding substrate regions can be mounted in a similar manner. Half the size of the GEN generation can also be provided in OLED display manufacturing.

[0012] According to an exemplary embodiment that can be combined with other embodiments described herein, the thickness of the substrate can be 0.1 to 1.8 mm, and the holding device, in particular the holding device, Can be adapted to the thickness of such a substrate. However, in particular the thickness of the substrate can be about 0.9 mm or less, such as 0.5 mm or 0.3 mm, etc., and the holding device, and in particular the holding device, is adapted to the thickness of such a substrate Is done.

[0013] As used herein, the term "substrate" can specifically include a substantially inflexible substrate, such as a wafer, a slice of transparent crystal such as sapphire, or a glass plate. However, the present disclosure is not limited thereto, and the term “substrate” may also include a flexible substrate such as a web or foil. The term “substantially inflexible” is understood to be distinct from “flexible”. Specifically, the substantially inflexible substrate can have a certain degree of flexibility even if it is a glass plate having a thickness of 0.9 mm or less (0.5 mm or less), for example. The flexibility of the inflexible substrate is lower than that of the flexible substrate.

[0014] According to embodiments described herein, the substrate may be made of any material suitable for depositing the material. For example, the substrate can be from the group consisting of glass (eg, soda lime glass, borosilicate glass, etc.), metals, polymers, ceramics, composite materials, carbon fiber materials, and any other materials and material combinations that can be coated by a deposition process. It can be made from a selected material.

[0015] FIGS. 1A-1D illustrate an apparatus for depositing evaporated material, ie, evaporated raw material, on two or more substrates. The deposition apparatus includes a vacuum chamber 110. The vacuum chamber can also be considered a processing chamber or a deposition chamber. The substrate support assembly provides a first location 112 for the first substrate corresponding to the first deposition region and a second location 114 for the second substrate corresponding to the second deposition region. According to embodiments described herein that can be combined with other embodiments, the first deposition region and the second deposition region are arranged side by side. The substrate support assembly can have a first portion that provides a first substrate location and a second portion that provides a second substrate location, eg, a separate second portion. The substrate support assembly can be a common support assembly that provides the first and second substrate positions. According to some embodiments that can be combined with other embodiments described herein, the substrate support assembly can be further configured to transport the substrate. The first substrate 132 and the second substrate 134 can be arranged in one plane, i.e. in the substrate support plane. There may be a slight offset between the first substrate and the second substrate, for example, a few millimeters or a few centimeters. It is beneficial to minimize the potential offset in order to increase the uniformity of material deposition between the substrates. The arrangement in which the first deposition area and the second deposition area are adjacent to each other is an arrangement in which the edge of the substrate or the edge of each carrier supporting the substrate faces each other. The surface of the substrate is basically arranged in one plane.

The apparatus shown in FIGS. 1A-1D further includes a deposition source assembly 120. The deposition source assembly 120 is movably supported on the linear guide element 122. The deposition source assembly is movable back and forth along the linear guide element, specifically between the two end points of the linear guide element. Thus, the deposition source assembly moves back and forth within the source plane, eg, within one source plane. As shown in FIG. 1A, the deposition source assembly 120 includes a first direction indicated by arrow 123 in FIG. 1A and a second direction opposite to the first direction indicated by arrow 123 in FIG. 1B. Can move along the direction of

[0017] The deposition source assembly includes one or more crucibles 126 and one or more distribution assemblies 124. According to some embodiments that can be combined with other embodiments described herein, the dispensing assembly 124 provides a source. The dispensing assembly 124 may have a plurality of openings or nozzles extending in one direction to provide a line of raw material that has evaporated while moving along the linear guide element 122.

[0018] Embodiments described herein may be advantageously utilized with vertical substrate orientation as well as the vertical orientation of the source provided by the deposition source assembly. This means that the deposition source assembly can provide a linear deposition source having a source stretch direction, for example, can be configured to provide a line of deposition material. Accordingly, FIGS. 1A-1D correspond to top views of an apparatus for depositing evaporated material on a substrate. The substrate support plane may be defined by the surface of the first substrate 132 and / or the second substrate 134. The source plane may be defined by the extension of the distribution assembly 124 and the movement of the deposition source assembly 120 along a first direction indicated by arrow 123. By referring to the vertical orientation described herein, a slight deviation from the direction of gravity may be possible. Vertical alignment is basically vertical and is distinct from horizontal substrate alignment.

[0019] According to some embodiments that may be combined with other embodiments described herein, the length of the substrate of the first deposition region, the substrate of the second deposition region, and the distribution pipe, eg, a source The length of can be essentially parallel to the direction of gravity. Basically parallel is to be understood as having an angle of -20 ° to 20 °, for example -15 ° to 15 °. According to such an embodiment, the substrate is oriented essentially vertically (basically the deviation from vertical is −20 ° <substrate orientation <+ 20 °). According to the embodiments described herein, which can be combined with other embodiments described herein, the deviation from the correct vertical orientation is such that the substrate surface on which the evaporated material is deposited faces down. With the substrate surface to be deposited facing down, particle generation on the deposited surface can be reduced.

[0020] The crucible 126 is below the distribution assembly 124 so that the raw material evaporated in the crucible is guided from the crucible to the distribution assembly, and in particular, the raw material evaporated in the crucible is directly guided from the crucible to the distribution assembly. Can be provided. The deposition source assembly 120 further includes a support 128 for the crucible and distribution assembly. The support 128 may include a drive unit for moving the deposition source assembly 120 along the linear guide element 122. In operation, the crucible and dispensing assembly are fixed with respect to the support 128. Specifically, the crucible and dispensing assembly are not rotated in the opposite direction (eg, downwardly in FIGS. 1A-1D) relative to the support 128. Also, the support 128 is not rotated during operation. By maintaining unidirectional material deposition on the substrate, the design of the deposition source assembly 120 can be made simpler. Because the performance of the deposition source assembly primarily determines the result of the layer deposited on the substrate, the simpler the design of the deposition source assembly, the easier it is to control the properties of the deposited layer.

[0021] The embodiments described herein allow the evaporated raw material to be sequentially deposited on two or more adjacent substrates. In sequential deposition, deposition is performed on the first deposition region, deposition is then performed on the second deposition region, and then deposition is performed again on the first deposition region. The substrate of the first deposition region and the substrate of the second deposition region are processed alternately. It is impossible or difficult to stop material evaporation from the deposition source assembly 120 without hindering the balance of the evaporation process. Failure to equilibrate results in the deposition apparatus resting until stable evaporation conditions are reestablished. The embodiments described herein allow for a continuous evaporation process in which the substrate in the first deposition area and the substrate in the second deposition area are processed sequentially. The first substrate is placed and prepared for the deposition of evaporated raw material while the second substrate is processed. After the processing of the second substrate, the first substrate can be processed and further substrates can be prepared in the processing area of the second substrate, so that the first substrate is processed. A further substrate is then placed and prepared for deposition.

[0022] Sequential processing of the substrate, ie, the deposition of raw materials, is easy to understand with reference to the sequence shown in FIGS. 1A-1D. In FIG. 1A, a first substrate 132 at a first substrate location 112 is processed and a material layer 133 is provided on the first substrate 132. Deposition source assembly 120 moves in a first direction indicated by arrow 123 in FIG. 1A. The deposition source assembly passes through the second substrate 134 at the second location 114. In FIG. 1B, the deposition source assembly 120 has passed once through the second substrate 134. The deposition source assembly returns in a second direction opposite to the first direction, as indicated by arrow 123 in FIG. 1B. The first half of the layer is provided on the second substrate 134. Meanwhile, the first substrate 132 has been removed from the vacuum chamber 110. The first substrate 132 can be removed via a valve 142, for example a valve for providing a vacuum seal, such as a slit valve. FIG. 1B shows the first position 112 emptied in the first deposition region. The removal of the first substrate and the loading of another substrate is indicated by arrow 143 in FIG. 1B. In FIG. 1C, the deposition source assembly has passed through the second substrate 134 twice. Deposition of layer 135 on second substrate 134 is complete. Meanwhile, another substrate 132 'is prepared at the first position 112, and the mask 136 is aligned with the other substrate. The deposition source assembly 120 continues to move in the second direction indicated by arrow 123 in FIG. 1C. The deposition source assembly passes through another substrate 132 '. The deposition source assembly has passed once through another substrate 132 'of FIG. 1D. In FIG. 1D, the first half of layer 133 has been deposited. Meanwhile, the second substrate 134 has been removed from the vacuum chamber 110. The second substrate can be removed via a valve 142, for example a valve that provides a vacuum seal, such as a slit valve. FIG. 1D shows the second position 114 emptied in the second deposition region. The substrate at the first position 112 and the second position 114 can be processed alternately. According to some embodiments, the substrate is a first half deposition process that is source movement in a first direction and a second half that is source movement in a second direction opposite to the first direction. Can be processed in the deposition process.

[0023] According to some embodiments that may be combined with other embodiments described herein, the deposition apparatus and method for deposition provide a symmetrical arrangement. For example, a symmetrical arrangement with the idle position of the deposition source assembly 120 in an intermediate position can be provided by a two-step deposition process for each substrate.

[0024] FIG. 2 is a schematic top view of an evaporation source according to a further embodiment described herein. The evaporation source shown in FIG. 2 includes three distribution assemblies 124. According to the embodiment described in the present document, the distribution pipe extends in the length direction, and the plurality of outlets can be arranged along the length direction of the distribution pipe. The wall of the distribution pipe can be heated by a heating element 280 attached to or attached to the wall. To reduce heat radiation from the heated portion of the substrate, mask, or distribution pipe to another part of the deposition apparatus, the first outer shield 202 surrounding the distribution pipe can be cooled. An additional second outer shield 204 may be provided to reduce the thermal load directed at the deposition area or substrate, respectively. The second outer shield 204 may have a front wall 205 that faces the substrate and / or faces the mask. The second outer shield 204 can include one or more sidewalls. For example, the second outer shield 204 includes a first sidewall 206 and a second sidewall 207.

[0025] According to some embodiments, which can be combined with other embodiments described herein, the shield is for a cooling fluid, such as water, attached to or provided within the metal shield. It can be provided as a metal plate having a plurality of conduits. Additionally or alternatively, a thermoelectric cooling device or other cooling device can be provided to cool the cooling shield. Typically, the outer shield, i.e. the outermost shield surrounding the inner cavity of the distribution pipe, can be cooled.

[0026] As further shown in FIG. 2, the shield device 220 is provided, for example, attached to the outer shield or as part of the outer shield. According to some embodiments, the shield device 220 can also be cooled to further reduce the heat load released towards the deposition area. The arrows indicate the evaporated raw material that exits the dispensing assembly 124. According to the embodiments described herein, the evaporation source typically includes a plurality of outlets distributed along the length of the evaporation source. For example, the evaporation source may include 30 or more outlets, for example, may include at least 50 outlets that are 2 cm apart from each other. According to the embodiments described herein, the shield device demarcates the distribution cone or plume of evaporated raw material dispersed toward the substrate. Typically, the shield is configured to block at least a portion of the evaporated raw material.

[0027] The three distribution pipes shown in FIG. 2 are provided in the evaporator control housing 212 adjacent to these distribution pipes, and are connected, for example, via a thermal insulator 214. The evaporator control housing is configured to maintain the air pressure within the evaporator control housing, and also includes a group of switches, valves, controllers, cooling devices, cooling control devices, heating control devices, power supplies, and measurement devices. At least one element selected from the above. In the embodiments described herein, components for operating the evaporation source of the evaporation source array can be provided in close proximity to the evaporation crucible and distribution pipe at atmospheric pressure, through the deposition apparatus along with the evaporation source. Can move.

[0028] According to embodiments described herein, the deposition source assembly may have at least one crucible and a corresponding dispensing assembly. For OLED manufacturing, two, three, four or more crucibles and corresponding dispensing assemblies can be provided. Having three distribution assemblies corresponding to three crucibles is advantageous for simultaneous evaporation of multiple OLED materials forming one OLED layer on the substrate.

[0029] According to some embodiments, which can be combined with other embodiments described herein, the raw material may be an organic material deposited on a substrate for the manufacture of OLED devices. The raw material can be vaporized to form a gaseous raw material by evaporation or sublimation. For some materials, it should be understood that sublimation may be utilized depending on the material, and the term “evaporation” as used herein should be understood to include sublimation options.

[0030] Embodiments described herein include a deposition source assembly with a body or deposition source having a raw material reservoir, and a heater for vaporizing the raw material into a gas by at least one of evaporation or sublimation of the raw material. I will provide a. The body can extend horizontally and gaseous raw materials can escape, for example, openings are included on the sides of the body, i.e. on the dispensing assembly. During operation, only the source that escapes to the source side is exposed as a source to the gaseous raw material and the substrates move relative to each other.

[0031] In order to achieve sufficient evaporation without reaching the boiling point of the evaporation material, the evaporation process is performed in a vacuum environment. The principle of evaporative deposition (or sublimation deposition) typically includes three phases. The first phase is the evaporating phase, and the material to be evaporated is heated in the crucible to the operating temperature. The operating temperature is set to create a vapor pressure sufficient for the material to move from the crucible to the substrate. The second phase is the transport phase, which provides a uniform layer of vapor on the substrate, so that the vapor moves from the crucible, for example, via a vapor distribution pipe with a nozzle on the substrate. The third phase is a condensation phase and the surface of the substrate is cooler than the evaporated material so that the vaporized material can adhere to the substrate.

[0032] According to embodiments described herein, a deposition source, eg, a source of raw material evaporation or sublimation, is transferred to a processing chamber or deposition system. In addition, the substrate carrier or substrate, respectively, and the mask or mask carrier, respectively, are transferred to a processing chamber or deposition system. This is advantageous when one or more deposition sources, the substrate or substrate carrier, and the mask or mask carrier are transferred by a non-contact levitation transfer, such as a magnetic levitation transfer, to reduce particle generation. The term “contactless” as used throughout this disclosure refers to the weight of an element, carrier or substrate employed in a processing system, such as a deposition source assembly, held by mechanical contact or mechanical force. It can be understood that it is held by magnetic force rather than. The substrate support assembly includes a first magnetic levitation assembly that provides a first portion, i.e., a first substrate position, and a second magnetic levitation assembly that provides a second portion, i.e., a second substrate position. Can have. The substrate support assembly may be a common support assembly, i.e., a common magnetic levitation assembly that provides first and second substrate positions. According to some embodiments that can be combined with other embodiments described herein, the substrate support assembly can be further configured to transport the substrate in a levitated state, for example.

[0033] Specifically, the deposition source assembly is held in a floating or floating state using magnetic force instead of mechanical force. As an example, the transfer apparatus described herein may not have mechanical means, such as mechanical rails, that support the weight of the deposition source assembly. In some implementations, there may be no mechanical contact between the deposition source assembly and the remainder of the transfer device while the deposition source moves across the substrate.

[0034] Referring to FIG. 3 by way of example, a transfer apparatus for transferring the deposition source assembly in a contactless manner will be described. Typically, the transfer device is placed in a vacuum chamber of the deposition apparatus as described herein. In particular, the transfer device is configured for non-contact levitation, transfer and / or deposition source alignment. Non-contact levitation, transfer and / or alignment is beneficial in that no particles are generated during transfer, for example due to mechanical contact with the guide rail.

[0035] A further advantage over mechanical means for inducing the deposition source is that the embodiments described herein affect the friction that affects the linearity of movement of the deposition source along the substrate being coated. It is in not receiving involvement of. Non-contact transfer of the deposition source allows frictionless movement of the deposition source, and the target distance between the deposition source and the substrate can be controlled and maintained with high accuracy and speed. Further, ascent may allow rapid acceleration and deceleration of the deposition source speed and / or fine adjustment of the deposition source speed. Thus, the processing system described herein is subject to several factors, such as variations in the distance between the deposition source and the substrate, or variations in speed as the deposition source moves along the substrate during material ejection. Sensitive to, resulting in improved layer uniformity.

[0036] In addition, the material of the mechanical rails typically suffers from deformations that can be caused by chamber exhaust and by temperature, use, wear, and the like. Such deformation affects the distance between the deposition source and the substrate and thus affects the uniformity of the deposited layer. In contrast, the transfer device embodiments described herein can compensate, for example, potential deformations present in the guide structure. More specifically, as will be described in more detail with reference to FIG. 3, and / or along one or more lateral directions (eg, x-direction and z-direction) The apparatus can be configured for non-contact translation of the deposition source assembly along the direction. The range of alignment of the deposition source can be 2 mm or less, more specifically 1 mm or less.

[0037] In the present disclosure, the phrase "substantially parallel" directions may include a plurality of directions that are at a small angle of up to 10 degrees or up to 15 degrees relative to each other. Further, the phrase “substantially perpendicular” direction may include a plurality of directions that are at an angle of less than 90 degrees (eg, at least 80 degrees, or at least 75 degrees) to each other. Similar considerations apply to concepts such as substantially parallel or perpendicular axes, planes, regions, etc.

[0038] In particular, the transfer apparatus described herein can be used for vertical substrate processing. In such an apparatus and method, the substrate is oriented vertically during substrate processing. That is, the substrates are placed in parallel in the vertical direction as described herein (ie, allowing deviations from possible strict verticality). A small deviation from the strict perpendicularity of the substrate orientation can be provided. This is because, for example, the substrate support with such a deviation can lead to a reduction in particle adhesion to the substrate surface. Basically vertical substrates can have a deviation of 15 ° or less from the vertical orientation.

[0039] As illustrated in FIG. 3, the transfer apparatus typically includes a deposition source assembly 330 that includes a deposition source 352 and a source support 351 for supporting the deposition source as described herein. Specifically, the source support 351 may be a source cart. The deposition source 352 can be mounted on a source support. As indicated by the arrows in FIG. 3, the deposition source is adapted to release material for deposition on the first substrate 132. Further, as exemplarily shown in FIG. 3, a mask 336 may be disposed between the substrate and the deposition source 352. The mask can be prepared to prevent material released by the deposition source from depositing on one or more regions of the substrate. For example, the mask may be an edge exclusion shield configured to mask one or more edge regions of the substrate such that no material is deposited on the one or more edge regions during coating of the substrate. As another example, the mask may be a shadow mask for masking a plurality of features that are deposited on the substrate by material from the deposition source assembly.

[0040] Still referring to FIG. 3 by way of example, the deposition source assembly 330 includes a first active magnetic unit 341 and a second active magnetic unit 342. Can be included. The transfer device typically further includes a guiding structure 370 extending in the deposition source transfer direction. The guiding structure 370 may have a straight shape extending along the source transfer direction. The first active magnetic unit 341, the second active magnetic unit 342, and the guiding structure 370 provide a first magnetic levitation force F1 and a second magnetic levitation force F2 for levitation of the deposition source assembly. Is configured to do.

[0041] In the present disclosure, an "active magnetic unit" or "active magnetic element" may be a magnetic unit or magnetic element adapted to generate an adjustable magnetic field. The adjustable magnetic field may be dynamically adjustable during operation of the transfer device. For example, the magnetic field may be adjustable during the release of the material by the deposition source for deposition of the material on the substrate, and / or may be adjusted between the deposition cycles of the layer formation process. Alternatively or additionally, the magnetic field may be adjustable based on the position of the deposition source assembly relative to the guiding structure. The adjustable magnetic field can be a static magnetic field or a dynamic magnetic field. According to embodiments that can be combined with other embodiments described herein, the active magnetic unit or element can be configured to generate a magnetic field to provide a magnetic levitation force extending along the vertical direction. It is. Alternatively, the active magnetic unit or element may be configured to provide a magnetic force extending along the lateral direction, eg, repelling magnetic force as described above. For example, the active magnetic unit or active magnetic element may be an element selected from the group consisting of electromagnetic devices, solenoids, coils, superconducting magnets, or combinations thereof, as described herein, or an element thereof. May be included.

[0042] As illustrated in FIG. 3, during operation of the transfer device, at least a portion of the guiding structure 370 may face the first active magnetic unit 341. The guiding structure 370 and / or the first active magnetic unit 341 may be disposed at least partially below the deposition source 352. The source hangs below the guiding structure or linear guiding element. The guidance structure 370 can be a static guidance structure that can be statically placed in a vacuum processing chamber. Specifically, the inductive structure can have magnetic properties. For example, the inductive structure 370 can be made of a magnetic material, such as a ferromagnetic material, particularly ferromagnetic steel. Thus, the guiding structure can be or include a magnetic unit.

[0043] The terms "passive magnetic unit" or "passive magnetic element" are used herein to distinguish from the concept of "active" magnetic units. A passive magnetic unit or element may refer to a unit or element having a magnetic property that is not affected by active control or regulation. For example, a passive magnetic unit or element can be adapted to generate a magnetic field (eg, a static magnetic field). Passive magnetic units or elements may not be configured to generate an adjustable magnetic field. Typically, the passive magnetic unit or element may be a permanent magnet or may have permanent magnetism.

[0044] According to embodiments that may be combined with other embodiments described herein, the first active magnetic unit is configured to generate a first adjustable magnetic field that provides a first magnetic levitation force F1. Can be configured. The second active magnetic unit may be configured to generate a second adjustable magnetic field that provides a second magnetic levitation force F2. The apparatus may include a first active magnetic unit 341 and / or a second active magnetic unit 342 for controlling the first adjustable magnetic field, and / or a second adjustment for alignment of the deposition source. A controller 355 may be included that is configured to individually control the possible magnetic fields. More specifically, the controller 355 can be configured to control the first active magnetic unit and the second active magnetic unit to translate the deposition source in a vertical translational direction. By controlling the first active magnetic unit and the second active magnetic unit, the deposition source assembly can be placed at the target location. Further, the deposition source assembly can be maintained at the target location under the control of the controller.

[0045] Controlling the angular orientation of the deposition source assembly 330 relative to the first axis of rotation 334 due to the rotational degrees of freedom provided by the individual controllability of the first active magnetic unit 341 and the second active magnetic unit 342. Is possible. Under the control of the controller 355, a target angular orientation is provided and / or maintained.

[0046] A further active magnetic unit 343 may be disposed on the first side 333A of the first plane 333. In operation, the further active magnetic unit 343 may face the first part 371 of the guiding structure 370 and / or at least partly between the first plane 333 and the first part 371. Can be provided automatically. Typically, the first passive magnetic unit 345 and the guidance structure 370 are configured to provide a first transversal force T1.

[0047] Specifically, the first passive magnetic unit 345 may be configured to generate a magnetic field. The magnetic field generated by the first passive magnetic unit 345 interacts with the magnetic properties of the guiding structure 370 and results in a first lateral force T 1 acting on the deposition source assembly 330. The first opposing force O1 may neutralize the first lateral force T1 such that the net force acting on the deposition source assembly 330 along the lateral direction, eg, the z direction, is zero. Accordingly, the deposition source assembly 330 can be held in a non-contact manner at the target location along the lateral direction.

[0048] As shown in FIG. 3, the controller 355 may be configured to control a further active magnetic unit 343. Control of the further active magnetic unit 343 may include control of an adjustable magnetic field generated by the further active magnetic unit 343 for controlling the first opposing lateral force O1. Further active magnetic unit 343 control may allow non-contact alignment of the deposition source 352 along the lateral direction, eg, the z-direction.

[0049] According to some embodiments of the transfer device, a passive magnetic drive unit may be provided in the guiding structure. For example, a passive magnetic drive unit can be a plurality of permanent magnets, in particular a plurality of permanent magnets that form a passive magnetic assembly with varying polar orientation. The plurality of magnets can have alternating polar orientations to form a passive magnet assembly. The active magnetic drive unit can be provided in or within a source assembly, eg, source support 351. The passive magnetic drive unit and the active magnetic drive unit can provide a drive, eg, a non-contact drive for moving along the guiding structure while the source assembly is levitated.

[0050] According to embodiments that can be combined with other embodiments described herein, the source cart includes a first active magnetic unit 341, a second active magnetic unit 342, a third active magnetic unit, Of the fourth active magnetic unit, the fifth active magnetic unit, the sixth active magnetic unit, the first passive magnetic unit 345, the second passive magnetic unit, or any combination thereof It may include additional active magnetic units, such as at least one.

[0051] By controlling the first active magnetic unit, the second active magnetic unit, the third active magnetic unit, and the fourth dynamic magnetic unit, the deposition source is translated along the vertical direction. Can be aligned. Under the control of the controller, the deposition source can be placed at the target location along the vertical direction, eg, the y-direction.

[0052] Deposition source by controlling, in particular independently controlling, the first active magnetic unit, the second active magnetic unit, the third active magnetic unit, and the fourth active magnetic unit. The assembly can be rotated about the first axis of rotation. Similarly, by controlling these units, the deposition source assembly can be rotated about the second axis of rotation. Control of the active magnetic unit allows control of the angular orientation of the deposition source assembly relative to the first rotational axis and the angular orientation relative to the second rotational axis for alignment of the deposition source. Thus, two rotational degrees of freedom for angular alignment of the deposition source can be provided.

[0053] FIG. 4 shows a deposition apparatus 400. FIG. The deposition apparatus 400 includes a vacuum chamber 110 for processing two or more substrates therein. Further, the deposition apparatus includes one or more maintenance chambers, for example, for maintenance of the deposition source assembly 120. The deposition apparatus includes a transfer chamber 450. The deposition apparatus includes two loading chambers 442.

[0054] The first substrate 132 and the second substrate 134 are arranged next to each other (ie, in one plane), and within the vacuum chamber 110, a deposition source assembly 120 that directs the evaporated raw material 420 in the deposition direction. , Moved back and forth along the linear guide element 122 and along the first and second substrates. The first substrate 132 and / or the second substrate 134 can be masked by each mask 136/138. During the deposition of the evaporated raw material on the first substrate and the second substrate, the deposited raw material guides the evaporated raw material along the deposition direction. According to some embodiments that can be combined with other embodiments described herein, the deposition of the evaporated raw material is continuous in the same direction, i.e., the deposition direction for depositing the material on the substrate during operation. Provided to.

[0055] According to some embodiments that may be combined with other embodiments described herein, at least one maintenance chamber 430 is provided. The maintenance chamber allows transfer of the deposition source assembly 120 from the maintenance chamber 432 to the vacuum chamber 110 (and vice versa). The maintenance chamber 430 includes a further linear induction element 422. An additional linear inductive element 422 is provided along the linear path of the linear inductive element 122. Accordingly, the deposition source assembly 120 may move from the linear guide element 122 to the further linear guide element 422 or from the further linear guide element 422 to the linear guide element 122. The maintenance chamber 430 further includes a door 433 that can be opened, for example, after the valve 431 is closed. By opening valve 431, the path of deposition source assembly 120 can be provided from maintenance chamber 430 to vacuum chamber 110 (and vice versa). After the valve 431 is closed, the maintenance chamber can be ventilated without disturbing the vacuum in the vacuum chamber 110.

[0056] FIG. 4 shows a maintenance chamber 430 and a second maintenance chamber 432. Each maintenance chamber has an additional linear guidance element 422 for movement of the evaporation source assembly. According to some embodiments, the first maintenance chamber 430 may be provided to load the deposition source assembly 120 from the maintenance chamber to the vacuum chamber 110. A second maintenance chamber 432 may be provided to load the deposition source assembly 120 from the vacuum chamber 110 to the second maintenance chamber 432. The second maintenance chamber 432 includes a door 433. Each maintenance chamber is connected to the vacuum chamber 110 by a valve 431.

[0057] According to some embodiments that may be combined with other embodiments described herein, a deposition apparatus for evaporating a raw material may include one maintenance chamber and may include two or more maintenance chambers. May be included. The maintenance chamber can be used for maintenance of the source. Specifically, the storage operation can be enhanced within the maintenance chamber. This can take tens of minutes to an hour. The vacuum chamber 110 can be loaded with a ready-to-use deposition source assembly. By loading a ready-to-use deposition source assembly, the downtime of the deposition apparatus 400 is reduced.

[0058] FIG. 4 shows two loading chambers 442. FIG. According to embodiments described herein that may be combined with other embodiments, a first loading chamber is provided adjacent to a deposition region configured for the first substrate 132 and a second loading chamber is provided. Is provided adjacent to a second deposition region configured for the second substrate 134. The loading chamber 442 can be connected to the vacuum chamber 110 by a valve 142 (eg, a slit valve). The loading chamber 442 can be configured to include at least one first support track 456 and second support track 458. The first track 456 corresponds to a substrate support track configured to support a carrier having a substrate or a substrate provided on the carrier. The second support track 458 corresponds to a mask support track configured to support a carrier having a mask or mask provided on the carrier.

[0059] According to embodiments of the present disclosure that may be combined with other embodiments described herein, loading of the substrate and / or mask (or each carrier) is done in a direction parallel to the substrate support plane. Processing chamber 442 is further coupled to transfer chamber 450. The loading of the substrate from the loading chamber to the transfer chamber (and vice versa) occurs in a direction perpendicular to the substrate support plane. According to some embodiments that can be combined with other embodiments described herein, the transfer chamber 450 and loading chamber 442 can be provided to form one vacuum region, or can be in another vacuum region. Can be.

[0060] According to some embodiments, the loading chamber 442 may further include a valve 443 for loading and unloading the carrier that supports the mask on the mask or second support track 458.

[0061] The substrate or carrier supporting the substrate is movable along a support track 452 via a deposition system that includes a deposition apparatus 400. A portion of the support track 452 can be provided in a dual track configuration having a support track 452 and an additional support track 454. The dual track configuration of a portion of the support track allows the processed substrate to be removed from the loading chamber 442 and moved to the transfer chamber 450 while simultaneously moving the substrate from the transfer chamber 450 to the loading chamber 442 for processing. . Additionally or alternatively, a double track configuration of a portion of the support track 452 moves the mask or a carrier having a mask supported on the carrier from the transfer chamber 450 to the loading chamber 442, and / or The carrier with the mask or the mask supported on the carrier can be removed from the loading chamber 442 and moved to the transfer chamber 450. Embodiments that allow transfer of the mask through the transfer chamber 450 may exclude an additional valve 443.

[0062] FIG. 5 shows a further deposition apparatus 400 without a further valve 443. To improve the traffic of the mask and the carrier supporting the mask within the transfer chamber 450, a dual track configuration having a support track 452 and an additional support track 554 can be provided to the transfer chamber 450. Additionally or alternatively, embodiments can include a dual track configuration for the substrate support and mask support. Thus, some embodiments that may be combined with other embodiments described herein have four support tracks, two support tracks for substrate loading and unloading, and two support tracks for carrier loading. And a transfer chamber for removal.

[0063] FIG. 6A illustrates a further modification of the deposition apparatus 400 that may be combined with other embodiments described herein. The loading chamber 642 is larger in size than the loading chamber 442 shown in FIGS. According to some embodiments that may be combined with other embodiments described herein, a space 610 may be provided between the vacuum chamber 110 and the transfer chamber 450. Thereby, an alignment system for aligning the mask and the substrate with respect to each other at the position of the outer wall of the vacuum chamber 110 can be provided. A portion of the alignment system can be provided in the space 610, ie outside the vacuum, specifically the vacuum in the vacuum chamber 110 or the vacuum in the transfer chamber 450.

[0064] FIG. 6B shows a deposition system 600 for depositing evaporated material, eg, evaporated raw material, onto a plurality of substrates. Deposition system 600 includes a loading chamber 632. The loading chamber can be a swing module configured to rotate the substrate or carrier supporting the substrate on the carrier from a horizontal orientation to a vertical orientation. A swing module configured to rotate the substrate or carrier may be provided in the vacuum chamber. The deposition system 600 further includes a transfer chamber 450.

[0065] According to some embodiments that may be combined with other embodiments described herein, the transfer chamber is configured to transfer a substrate or carrier supporting the substrate from the loading chamber to the rotation chamber 636. A first transfer track 634 can be included. The rotation chamber 636 is configured to rotate the substrate or the carrier that supports the substrate. As the substrate in the rotation chamber 636 rotates, the substrate or carrier supporting the substrate is moved from the first transfer track 634 to the second transfer track 638. The second transfer track 638 is configured to transfer the substrate or carrier supporting the substrate from the rotating chamber 636 to the unloading chamber 639.

[0066] The unloading chamber may be a swing module configured to rotate the substrate or carrier supporting the substrate from a vertical orientation to a horizontal orientation. According to some embodiments that may be combined with other embodiments described herein, the substrate or carrier supporting the substrate is in a vertical orientation within the deposition system 600 between the loading chamber 632 and the unloading chamber 639. Can stay.

[0067] According to an optional embodiment that may be combined with other embodiments described herein, the first transfer track 634 and the second transfer track 638 may also be a substrate or substrate in a direction opposite to that described above. Can be configured to transport a carrier that supports the carrier. For example, the substrate or carrier can be transferred back and forth on each transfer track. According to further embodiments that may be combined with other embodiments described herein, each of the first transfer track 634 and the second transfer track 638 further supports a carrier having a mask on the mask or carrier. Including a separate mask support track for.

[0068] The deposition system 600 can include two or more vacuum chambers 110 for performing deposition on two substrates in a vacuum chamber, the substrates being placed next to each other, and the deposition source assembly 120 is linear By moving back and forth along the inductive element, a continuous deposition process is provided. FIG. 6B shows two vacuum chambers 110. Each vacuum chamber represents a first substrate 132 and a second substrate 134. Each vacuum chamber is provided with a first deposition region for the first substrate and a second deposition region for the second substrate.

[0069] Furthermore, each vacuum chamber represents a first mask 136 and a second mask 138. According to some embodiments that may be combined with other embodiments described herein, the vacuum chamber 110 is provided with a first mask support and a second mask support.

[0070] Two loading chambers 442 are disposed on opposite sides of the vacuum chamber 110. The loading chamber has a substrate support track, ie, a substrate transfer track, in a transfer direction parallel to the substrate support plane of the vacuum chamber 110. The first deposition region of the vacuum chamber can be loaded with an unprocessed substrate from one loading chamber 442. The second deposition region of the vacuum chamber can be loaded with an unprocessed substrate from another loading chamber 442. According to some embodiments that may be combined with other embodiments described herein, the loading chamber may include a dual track support configuration for the substrate having a first track and a second track. it can. By having a double track configuration, it is possible to load an unprocessed substrate and take out a substrate after processing in a short time.

[0071] Additionally or alternatively, the dual track configuration also allows the mask or mask carrier to move in and out of the vacuum chamber 110. According to a further configuration, additional tracks, for example two additional tracks, can be provided in the loading chamber 442 for the mask or mask carrier.

[0072] As shown in FIG. 6B, a loading chamber 442 is provided between the two vacuum chambers for processing adjacent substrates. A loading chamber 442 provided between two vacuum chambers can load and unload substrates and / or masks into each of two adjacent vacuum chambers 110. According to some embodiments that may be combined with other embodiments described herein, N vacuum chambers are provided for processing adjacent substrates therein, and the N vacuum chambers are loaded and unloaded. N + 1 loading chambers may be provided.

[0073] The deposition system 600 may further include a maintenance chamber 430. The maintenance chamber 430 shown in FIG. 6B is provided between two vacuum chambers for substrate processing. Maintenance chamber 430 is configured to maintain deposition source assembly 120. The ready-to-use deposition source assembly 120 can be moved from the maintenance chamber 430 to one of the vacuum chambers 110. For example, the maintenance chamber 430 can be provided with a rotation mechanism that rotates the ready-to-use deposition source assembly 120 in a source plane, ie, a plane in which the source moves back and forth across two substrates. is there. After the ready-to-use deposition source assembly has been rotated in the source plane, the deposition source assembly can be moved to one of the vacuum chambers.

[0074] FIG. 6C shows a further deposition apparatus for depositing evaporated material on two or more substrates. The deposition apparatus includes a vacuum chamber 110 having a first deposition region of the first substrate 132 and a second deposition region of the second substrate 134. The deposition area is provided by a substrate support assembly (comprising two parts or as one common assembly) that provides a first substrate location and a second substrate location. In addition, a first support location for the first mask 136 and a second support location for the second mask 138 are provided. A maintenance chamber 430 for maintenance of the deposition source assembly 120 is provided. For example, the maintenance chamber 430 can be adjacent to the region 611 between the first deposition region and the second deposition region. Region 611 can be considered the central region of vacuum chamber 110. The first deposition region of the first substrate 132 and the second deposition region of the second substrate 134 are arranged adjacent to each other. The first deposition region and the second deposition region provide a substrate support plane. The substrate support plane may be vertical or tilted slightly (eg, less than 15 °) so that the substrate is facing down. The deposition source assembly 120 is moved back and forth along the linear guide element 122. This is indicated by arrow 622.

[0075] According to embodiments described herein, the maintenance chamber 430 can be vacuum sealed from the vacuum chamber 110, for example, at the dashed line 631. A vacuum sealed or vacuum sealed door may be provided between the maintenance chamber 430 and the vacuum chamber 110. For replacement of the deposition source assembly 120, the deposition source assembly 120 shown in the maintenance chamber 430 can be moved to the vacuum chamber 110, while the deposition source assembly shown in the vacuum chamber 110 is removed from the vacuum chamber 110. It is possible to move to the maintenance chamber 430. For example, this is provided by a rotating mechanism. Due to the operation of the rotating mechanism, the deposition source assembly 120 can be moved to an idle (standby) position. For example, the idle position can be a position where the deposition source assembly 120 faces the idle shield 690. According to some embodiments that can be combined with other embodiments described herein, the idle shield 690 can be removed from the vacuum chamber 110 along with the deposition source assembly 120. Further, an idle shield 691 can be provided from the maintenance chamber to the vacuum chamber 110.

[0076] According to some embodiments, the control housing of the deposition source assembly (see, eg, reference number 212 in FIG. 2) can be connected to atmospheric pressure by a media supply arm 680. For example, the media supply arm 680 can be adjacent to the region 611, eg, the central region of the vacuum chamber 110.

[0077] The deposition apparatus shown in FIG. 6C may further include a transfer chamber 450 and two loading chambers 442. A vacuum chamber 110 is provided between the two loading chambers 442. The first deposition region is adjacent to the first loading chamber, and the substrate is loaded into and removed from the first loading chamber. The second deposition region is adjacent to the second loading chamber, and the substrate is loaded into and removed from the second loading chamber.

[0078] According to a typical implementation, the loading chamber 442 includes at least a first support track 456 (eg, a first transfer track) and a second support track 458 (eg, a second transfer track). As indicated by the arrows in FIG. 6C, the substrate and / or mask is moved from the loading chamber to the vacuum chamber and parallel to the substrate support plane provided by the first and second deposition regions. Yes. The first support track and the second support track in the loading chamber can be used for rapid loading and unloading of the substrate and / or for loading and unloading the mask. According to further modifications that may be combined with other embodiments described herein, additional support tracks, specifically a third support track and a fourth support track, may be provided in the loading chamber. By having more than one support track, it is possible to have separate tracks for the substrate support and the mask support. Thus, the dual track configuration may be a multi-track configuration with 2, 3, 4, or more tracks. According to some embodiments that can be combined with other embodiments described herein, a dual track configuration or a multitrack configuration can be moved from the loading chamber 442 to the transfer chamber 450. The transfer assembly is configured to provide movement of the track on the track in a direction perpendicular to the transfer direction from the loading chamber to the transfer chamber (and vice versa).

[0079] FIG. 6D shows a further deposition apparatus for depositing evaporated material on two or more substrates. The deposition apparatus includes a vacuum chamber 110 having a first deposition region of the first substrate 132 and a second deposition region of the second substrate 134. Compared to other embodiments described herein, a first deposition region and a second deposition region are provided on the side of the vacuum chamber 110 that is oriented away from the transfer chamber 450. According to some embodiments, a deposition apparatus can be provided and the linear guide element 122 for supporting the deposition source assembly 120 is between the substrate support assembly and the chamber wall adjacent to the transfer chamber 450. Alternatively, it is provided between the substrate support assembly and the transfer chamber 450. This can be advantageous as an alignment of the substrate supported on the substrate support assembly. Also, the mask supported on the mask support assembly can be easily accessed from the outer wall of the vacuum chamber 110 (eg, the lower wall of the vacuum chamber of FIG. 6D).

[0080] The deposition area is provided by a substrate support assembly (comprising two parts or as one common assembly) that provides a first substrate location and a second substrate location. In addition, a first support location for the first mask 136 and a second support location for the second mask 138 are provided. A maintenance chamber 430 for maintenance of the deposition source assembly 120 is provided. For example, the maintenance chamber 430 can be adjacent to a region between the first deposition region and the second deposition region. This region can be regarded as the central region of the vacuum chamber 110. The first deposition region of the first substrate 132 and the second deposition region of the second substrate 134 are arranged adjacent to each other. The first deposition region and the second deposition region provide a substrate support plane. The substrate support plane may be vertical or tilted slightly (eg, less than 15 °) so that the substrate is facing down. The deposition source assembly 120 is moved back and forth along the linear guide element 122. This is indicated by arrow 622.

[0081] According to embodiments described herein, the maintenance chamber 430 may be vacuum sealed from the vacuum chamber 110. For example, an optional gate valve can be provided to seal the deposition region of the vacuum chamber 110 from the maintenance chamber 430. A vacuum sealed or vacuum sealed door may be provided between the maintenance chamber 430 and the vacuum chamber 110. A maintenance chamber may be provided by any other embodiment described herein, such as the embodiment described with respect to FIG. 6C.

[0082] The deposition apparatus shown in FIG. 6D may further include a transfer chamber 450 and two loading chambers 442. A vacuum chamber 110 is provided between the two loading chambers 442. The first deposition region is adjacent to the first loading chamber, and the substrate is loaded into and removed from the first loading chamber. The second deposition region is adjacent to the second loading chamber, and the substrate is loaded into and removed from the second loading chamber.

[0083] According to a typical implementation, the loading chamber 442 is moved, for example, from the transfer chamber 450 to the loading chamber, at least a first support track 452 (eg, a first transfer track) and a second support track. 454 (eg, a second transfer truck). The substrate and / or mask is moved from the loading chamber to the vacuum chamber and parallel to the substrate support plane provided by the first and second deposition regions. According to further modifications that may be combined with other embodiments described herein, additional support tracks, specifically a third support track and a fourth support track, may be provided in the loading chamber. By having more than one support track, it is possible to have separate tracks for the substrate support and the mask support. Thus, the dual track configuration may be a multi-track configuration with 2, 3, 4, or more tracks. According to some embodiments that can be combined with other embodiments described herein, a dual track configuration or a multitrack configuration can be moved from the loading chamber 442 to the transfer chamber 450 (and vice versa).

[0084] FIG. 7A shows a further deposition apparatus 600. The deposition system includes a loading chamber 632 and an unloading chamber 639. Alternatively, the loading chamber may be an unloading chamber and the unloading chamber may be a loading chamber. In addition, a boost chamber can be provided for loading and unloading. The loading and unloading chambers include a swing module for rotating from a horizontal orientation to a vertical orientation (and vice versa).

[0085] The deposition system 600 includes a plurality of deposition devices 400. The deposition apparatus may be provided with one or more details and aspects of other deposition apparatuses described herein, specifically described with respect to FIGS. 4, 5, 6A, and 6C. The transfer chambers of the deposition apparatus are arranged on a single line so that transfer of the substrate and carrier is possible via a transfer chamber (eg, an adjacent transfer chamber). In addition, it may be possible for two or more vacuum chambers of the deposition apparatus (eg, vacuum chamber 110 of FIGS. 4, 5, 6A, and 6C) to have a common transfer chamber. For example, one layer of organic material can be provided to each of the deposition apparatus 400. Thus, devices such as OLED displays can be manufactured layer by layer while the substrate passes through the deposition system via various deposition apparatuses. The deposition system 600 further includes a rotating chamber 710 for rotating a transfer track provided in the rotating chamber, for example, by 90 °, 180 °, 270 °, or 360 °. According to some embodiments that can be combined with other embodiments described herein, the rotating chamber can have multiple support track source transfer tracks, corresponding to multiple tracks in the transfer chamber. For example, the number correspondence may be such that the rotating chamber has twice as many tracks as the transfer chamber. This allows the substrate and / or mask to be transferred from the transfer direction of one deposition apparatus to the opposite transfer direction of another deposition apparatus.

[0086] According to some embodiments that may be combined with other embodiments described herein, the rotating chamber may be further connected to one or more mask storage chambers, ie, a mask shelf chamber or a mask buffer chamber. . The storage buffer chamber holds a plurality of masks that can be periodically replaced in the vacuum chamber of the deposition apparatus. FIG. 7A shows three mask storage chambers 720. Providing more than one mask storage chamber allows for improved mask traffic in the deposition system. In addition, the mask buffer chamber may include a slit valve for transferring and removing the mask to and from the chamber (cleaning chamber or load lock chamber).

[0087] FIG. 7B further includes a deposition system that includes one or more deposition apparatus 400. The deposition apparatus 400 has a loading chamber on each side surface of the substrate position arranged adjacent to the vacuum chamber. The loading chamber is connected to the transfer chamber 450. The substrate and / or carrier can be moved from the transfer chamber 450 to the loading chamber by moving the support track perpendicular to the transfer direction of the support track. The system shown in FIG. 7B illustratively includes two mask storage chambers 720 connected to a rotating chamber 710. The support track in the rotating chamber can be rotated to have a transfer direction facing the mask storage chamber. The mask can be loaded onto the support track of the rotating chamber. The rotating chamber can rotate the support track, ie the transfer track, by 90 °. The mask may be transferred into the transfer chamber, i.e. along the support track 452, the further support track 454 or the further track 750. For example, additional tracks 750 can be provided to facilitate mask traffic within the deposition system. According to some embodiments that may be combined with other embodiments described herein, the loading chamber may also have a first support track 456, a second support track 458, and an additional support track.

[0088] FIGS. 8A-8H illustrate a deposition apparatus for depositing material on two adjacent substrates, ie, with substrate edges facing each other. The apparatus includes a vacuum chamber for processing two substrates, ie, a deposition, a loading chamber 442 adjacent to each substrate disposed in the vacuum chamber, and a transfer chamber 450. The transfer chamber 450 includes a support track 452 for transferring the substrate through the deposition system. Further, the support track 452 has a portion with a double track configuration, where a second track 454 is provided. As shown in FIGS. 8A-8H, the support track portion comprising a dual track configuration is movable from the transfer chamber 450 to the loading chamber 442. According to some embodiments, a support track portion comprising a dual track configuration is moveable from one chamber to an adjacent chamber, eg, from a transfer chamber to a loading chamber. According to other embodiments, both the transfer chamber and the loading chamber include one or more support tracks, e.g., support tracks comprising a single track configuration, a dual track configuration, a triple track configuration, or more track configurations. sell. The carrier for the substrate and / or mask can be transferred by switching between tracks or by moving a track from one chamber to another. The above embodiments are not to be understood as being mutually exclusive, and one chamber may include one or more chambers, while additional tracks may be coupled into the chamber.

[0089] In FIG. 8A, the substrate S1 is in a first substrate position, ie, for example, a first deposition region of a substrate support. The substrate support can provide the substrate S1 in a state of floating in the first deposition region. A first mask 136 is provided between the deposition source assembly 120 and the substrate S1. The substrate S2 is in a second substrate position, i.e., for example, in a second deposition region of the substrate support. The substrate support can be provided in a state where the substrate S2 is floated in the first deposition region. From FIG. 8A to FIG. 8H, the deposition source assembly 120 moves along a linear guide element 122 between two end positions along the first and second deposition regions in sequence. The deposition source assembly 120 moves in a first direction 801 and a second direction facing the first direction.

[0090] In FIG. 8A, the substrate S1 has been processed in one complete sweep with evaporated material. The movement of the deposition source assembly 120 from the right side to the left side has deposited material on about half of the substrate S1. While the substrate S1 is being processed, the portion of the transfer chamber with the dual track configuration of the support track is moved to the right loading chamber 442 as indicated by arrow 811. As shown in FIG. 8B, the support track portion with the dual track configuration has a substrate S3 loaded thereon. The substrate S3 passes through a slit valve in the plane of the first deposition region. An empty support track is provided in the substrate support plane, i.e. in the plane of the first deposition region. As indicated by arrow 812, the processed substrate S1 can be moved over the support track 454. At this point, the evaporation of the raw material on the substrate S1 is complete. The deposition source assembly 120 continues to move along the first direction 801 and begins to deposit the second substrate S2. In FIG. 8C, the first half of the second substrate is deposited with a first sweep. The first substrate S2 is loaded onto the support track 454 and the portion of the support track with a dual track configuration can be moved from the loading chamber 442 to the transfer chamber 450 as indicated by arrow 813.

[0091] In FIG. 8D, the first substrate S1 may be aligned with the support track 452 and moved to a downstream process, as indicated by arrow 815. The third substrate S3 can be aligned with the substrate support assembly in the vacuum chamber 110, and the third substrate S3 can be moved to the first deposition region. The deposition source assembly completes one sweep of the substrate S2, moves backward, and passes by the second deposition area and the first deposition area. In FIG. 8E, the fourth substrate S4 is loaded from a downstream process into a portion of the support track 452 having a dual track configuration. The substrate S4 is moved to a loading chamber 442 adjacent to the second deposition region, for example, the left loading chamber of FIGS. 8A-8H, as indicated by arrow 816. FIG. 8E further shows that while moving along the second direction 802, the deposition source assembly was deposited on about one-half of the substrate S2. In FIG. 8F, the processing of substrate S2 is complete and the substrate is moved onto a portion of the support track having a dual track configuration, as indicated by arrow 817. In this position, the substrate S4 has passed through a substrate support assembly in the vacuum chamber, for example a slit valve along the plane of the second deposition region.

[0092] In FIG. 8G, processing of the substrate S3 in the first deposition region is initiated, while the deposition source assembly continues to move along the second direction. The dual track component of the support track moves as indicated by arrow 818 to align substrate S2 with support track 452 and substrate S4 with the substrate support assembly of the vacuum chamber. In FIG. 8H, substrate S2 may be moved to a downstream process as indicated by arrow 820, and substrate S4 may be moved to a vacuum chamber as indicated by arrow 819.

[0093] FIG. 9 further illustrates a deposition apparatus 900 for depositing evaporated material or evaporated raw material on one or more substrates, respectively. The deposition apparatus includes a vacuum chamber 901 and a substrate support assembly that provide a first deposition region of the first substrate 132 and a second deposition region of the second substrate 134. The first deposition region and the second deposition region are arranged next to each other. That is, the edge of the first substrate 132 and the edge of the second substrate 134 face each other. The deposition source assembly 120 for evaporating the raw material moves along the first direction to sequentially deposit in the first location region and the second deposition region, and then the second deposition region and the first deposition region. In order to deposit in order in the deposition region, it is configured to move along a second direction opposite to the first direction.

[0094] A first mask 136 is provided between the deposition source assembly and a first deposition region that provides a substrate location for the first substrate 132. A second mask 138 is provided between the deposition source assembly and a second deposition region that provides a substrate location for the second substrate 134. Similar to the previous embodiment, a maintenance chamber 430 is provided on each side of the vacuum chamber 901, for example. Details, aspects, and implementations of the maintenance chamber described herein may be combined with an embodiment of the deposition apparatus 900, as exemplarily described with respect to FIG.

[0095] According to embodiments that can be combined with other embodiments described herein, a plurality of support tracks can be provided in the vacuum chamber 901. In addition, one or more slit valves are provided on each side of the vacuum chamber 901. FIG. 9 shows a first slit valve 911 for receiving the mask and substrate from the downstream process, and a second slit valve 912 for moving the mask and substrate to the upstream process. This is indicated by the arrow in FIG. In addition, a dual track support is provided having a first track 922 and a second track 924 for each of the deposition regions. The dual track support can be moved between the forward position shown in FIG. 9 and the rear position shown by the rear track 928. The substrate can be moved through the deposition system of each of the first support track 922, the second support track 924, and the back track 928. Further, the mask can be moved through a deposition system on the mask track.

[0096] FIGS. 10A-10H illustrate the operation of a deposition system having two or more deposition apparatuses 900 shown in FIG. 10A-10H show a transfer chamber 1050, a first vacuum chamber 901, and a second vacuum chamber 901. Each of the vacuum chambers has a first deposition region and a second deposition region. Each substrate position is shown as position P1, position P2, position P3, and position P4. The left position in transfer chamber 1050 is shown as P-1 (not shown), and the right position in transfer chamber 1050 is shown as P0 (not shown). Each of the dual track supports for supporting the substrate has a rear position R and a front position F which are exemplarily shown in FIGS. 10A and 10D. The rear position R and the front position F are provided in other figures.

[0097] In FIG. 10A, all of the dual track support is provided in the forward position. Support track 922 is loaded with the substrate. An empty substrate is provided in the transfer chamber 1050. In the left vacuum chamber 901, the substrate receives a first layer while the deposition source assembly moves along a first direction 801. Within the right vacuum chamber 901, the substrate receives the second layer, while the deposition source assembly moves along the first direction 801. The deposition source assembly deposits in the first deposition region, that is, the right deposition regions P2 and P4. In FIG. 10B, the processing of the first deposition region is complete. The first layer is deposited at location P2, and a further layer is deposited at location P4. The dual track supports at positions P0, P2, and P4 are moved to the rear position as indicated by the arrows. The deposition source assembly continues to move along the first direction 801 to process the substrates at positions P1 and P3. In FIG. 10C, the substrate at position P4 is moved to a downstream process. The substrate at position P2 is moved to position P4. The substrate at position P0 is moved to position P2, and a new substrate is loaded at position P0. Meanwhile, the substrate at position P1 receives the first layer and the substrate at position P3 receives the second layer. In FIG. 10D, the deposition source assembly completes a first sweep across the substrate at positions P 1 and P 3 and moves in a second direction 802 opposite to the first direction 801. The dual track support at positions P0, P2, and P4 is returned to the forward position as indicated by the arrows. In FIG. 10E, the deposition source assembly continues to provide a second sweep across the substrate at locations P1 and P3. In FIG. 10F, the deposition of the first layer is completed at position P1, and the deposition of the second layer is completed at position P3. In addition, the dual track supports at positions P-1, P1, and P3 are moved to the rear position as indicated by the arrows. The deposition source assembly continues to move along the second direction 802 because it sequentially passes along the second deposition region and the first deposition region, ie, from position P1 to P2 and from position P3 to P4. . In FIG. 10G, the substrate at position P3 is moved to a downstream process. The substrate at position P1 is moved to position P3. The substrate at position P-1 is moved to position P1, and a new substrate is loaded at position P-1. Further, the deposition source assembly continues to provide a first layer at location P2 and an additional layer at location P4. In FIG. 10H, the deposition of the first half of the layer at position P2 and the first half of the layer at position P4 is complete, and the deposition source assembly moves along a first direction 801 opposite to the second direction 802. The dual track support at positions P-1, P1, and P3 returns to the forward position. As a result, the process can continue as shown in FIG. 10A. Accordingly, a continuous deposition process can be provided in the vacuum chamber 901. A continuous evaporation process is provided during alternate deposition of material in the first and second deposition regions, and the deposition direction remains essentially the same as the deposition of the material on the substrate.

[0098] FIG. 11 shows a deposition system for depositing evaporated material, eg, evaporated raw material, onto a plurality of substrates. The deposition system includes a loading chamber 632. The loading chamber can be a swing module configured to rotate the substrate or carrier supporting the substrate on the carrier from a horizontal orientation to a vertical orientation. A swing module configured to rotate the substrate or carrier may be provided in the vacuum chamber. The deposition system further includes a plurality of deposition apparatuses 900 that can be operated as illustrated by FIGS. 10A-10H. Once the first row of deposition equipment has been processed, the substrate can be loaded into the rotating chamber 710. The rotating chamber 710 can be rotated by 180 ° to provide the substrate to the second row of the deposition apparatus. Further, one or more mask storage chambers 720 can be provided in the rotating chamber. The rotating chamber can receive the mask from the mask storage chamber 720 or move the mask to the mask storage chamber 720 by rotating by 90 °. After completing the processing of the substrate in the second row of the deposition apparatus, the substrate can be provided to the unloading chamber 639. The unloading chamber may be a swing module configured to rotate the substrate or carrier supporting the substrate from a vertical orientation to a horizontal orientation. According to some embodiments that may be combined with other embodiments described herein, the substrate or carrier supporting the substrate is in a vertical orientation within the deposition system 600 between the loading chamber 632 and the unloading chamber 639. Can stay.

[0099] FIG. 12 shows a deposition system for depositing evaporated material. A rotating chamber 710 is provided between the deposition apparatus 900 to reduce the distance from each deposition chamber or deposition 900 of one or more mask storage chambers 720 as compared to the deposition system described with respect to FIG. A further rotating chamber 710 is provided to move the substrate from the entry line of the deposition apparatus to the exit line of the deposition apparatus during processing.

[00100] Embodiments of the present disclosure relate to the deposition of raw materials on two substrates,
Specifically, mention is made of depositing raw materials on two substrates arranged next to each other, for example, using a scanning source, ie a movable source. The first deposition region and the second deposition region are arranged next to each other, and the deposition source assembly for evaporating the raw material sequentially deposits in the first deposition region and the second deposition region, so that the first direction In order to deposit in order in the second deposition region and the first deposition region, it is configured to move along a second direction opposite to the first direction. Thus, a continuous deposition process can be provided such that the material utilization of the deposition source (especially the evaporation source) can be very high (eg, about 80% or more). This advantage is particularly true for devices having a loading chamber adjacent to the first deposition region, as well as an additional loading chamber adjacent to the second deposition region, as described herein. Further, as described herein, a system that includes a transfer chamber or that utilizes a processing chamber as the transfer chamber allows a small footprint to be installed, especially in dimensions that can meet the requirements of modern manufacturing sites. An area becomes possible.

[00101] While the above description is directed to several embodiments, other and further embodiments may be devised and without departing from the basic scope of the disclosure. Is defined by the appended claims.

Claims (13)

A deposition apparatus for depositing evaporated raw material on two or more substrates,
A vacuum chamber;
A substrate support assembly that provides a first deposition region of a first substrate of the two or more substrates and a second deposition region of a second substrate of the two or more substrates, the first deposition A substrate support assembly, wherein the region and the second deposition region are disposed side by side;
Along the first direction so that the first deposition region and the second deposition region are sequentially deposited, and the second deposition region and the first deposition opposite to the first direction. A deposition apparatus comprising: a deposition source assembly for evaporating a raw material configured to move along a second direction to sequentially deposit in a region.   The deposition source assembly is configured to move along the first direction, in particular parallel to the substrate support plane provided by the first and second deposition regions disposed adjacent to each other. The deposition apparatus of claim 1, further comprising a linear inductive element.   The deposition apparatus of claim 2, wherein the linear inductive element is configured to move the deposition source assembly in one source plane within a vacuum chamber.   The linear guide element has a first end point and a second end point, and the deposition source assembly moves back and forth along a first direction between the first end point and the second end point. The deposition apparatus according to claim 2 or 3, wherein the deposition apparatus is moved.   5. The source plane of claim 2, wherein a source plane is defined by the deposition source assembly providing a linear deposition source extending along the first direction and a source extension direction different from the first direction. The deposition apparatus as described in any one of Claims.   6. The deposition apparatus according to any one of claims 2 to 5, further comprising a maintenance chamber coupled to the vacuum chamber having a further linear inductive element for moving the deposition source assembly from the linear inductive element. . A deposition system for depositing evaporated raw material on two or more substrates,
The deposition apparatus according to any one of claims 1 to 6,
A mask storage chamber;
A deposition system comprising one or more support tracks configured to move a mask carrier from the mask storage chamber to the deposition apparatus;   The deposition system of claim 7, further comprising a maintenance chamber coupled to the vacuum chamber having a further linear guidance element for moving the deposition source assembly from the linear guidance element. A second deposition apparatus according to any one of claims 1 to 6;
A maintenance chamber coupled to the vacuum chamber having a further linear inductive element for moving the deposition source assembly from the linear inductive element, provided between the deposition apparatus and the second deposition apparatus The deposition system of claim 7, further comprising a maintenance chamber.   A first loading chamber and a second loading chamber, wherein the first loading chamber and the second loading chamber are disposed adjacent to each other together with the first deposition region and the second deposition region; The first deposition region and the second deposition region are disposed between the first loading chamber and the second loading chamber, respectively. Deposition system.   11. A deposition system according to any one of claims 7 to 10, further comprising a transfer chamber having a support track having at least one portion with a dual track configuration. A deposition system for depositing evaporated raw material on two or more substrates,
The two or more deposition apparatuses according to any one of claims 1 to 6, wherein each of the deposition apparatuses includes a substrate support track, a carrier support track, and a transfer track, and the two or more deposition apparatuses. Two or more deposition apparatuses in which the substrate support track, the carrier support track, and the transfer track of adjacent deposition apparatuses are arranged on one line;
A deposition system comprising: a maintenance chamber coupled to at least one vacuum chamber and having a further linear induction element for moving the deposition source assembly from the linear induction element. A method for depositing evaporated raw material on two or more substrates, comprising:
Moving a first substrate of the two or more substrates into a vacuum treatment chamber;
Moving the deposition source assembly in a first direction and directing a gaseous source material onto the first substrate in the deposition direction;
Moving the deposition source assembly in a second direction opposite to the first direction and directing a gaseous source material onto the first substrate in the deposition direction;
Moving a second substrate of the two or more substrates into the vacuum treatment chamber and directing a gaseous source material onto the first substrate in the deposition direction;
Moving the deposition source assembly in a second direction and directing a gaseous source material onto the second substrate in the deposition direction;
Moving the deposition source assembly in the first direction and directing a gaseous source material onto the second substrate in the deposition direction.

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