WO2010114274A2

WO2010114274A2 - Apparatus for depositing film and method for depositing film and system for depositing film

Info

Publication number: WO2010114274A2
Application number: PCT/KR2010/001919
Authority: WO
Inventors: Kyung Bin Bae; Hyung Seok Yoon; Chang Ho Kang; Hyun Goo Kwon
Original assignee: Snu Precision Co., Ltd
Priority date: 2009-03-31
Filing date: 2010-03-30
Publication date: 2010-10-07
Also published as: JP2012522137A; JP5364200B2; CN102369306A; KR101097737B1; CN102369306B; KR20100108994A; TWI427178B; WO2010114274A3; TW201104008A

Abstract

Provided are an apparatus for depositing a film, including: a chamber configured to provide a reaction space; first and second substrate holders spaced apart from each other and installed in the chamber; and a deposition source which is installed between the first and second substrate holders and configured to sequentially supply a deposition raw materials in directions of the first and second substrate holders, a method for depositing a film suitable for the apparatus, and a system for depositing a film including the apparatus. According to the present disclosure, since sequential film processes can be performed with respect to two or more process lines provided in each of the process chambers through the single deposition source provided in each of the process chambers, fabrication costs can be saved and at the same time productivity can be enhanced.

Description

APPARATUS FOR DEPOSITING FILM AND METHOD FOR DEPOSITING FILM AND SYSTEM FOR DEPOSITING FILM

The present disclosure relates to apparatus and method for depositing a film, and more particularly, to apparatus and method for depositing a film on a substrate, and a system for depositing a film in which an apparatus for depositing a film is connected by in-line type.

Because of self-luminescent characteristic, which is different from a Liquid Crystal Display (LCD), an Organic Light Emitted Diode (OLED) does not need a backlight and power consumption thereof is small. Also, because of wide viewing angle and fast response time, a display device using an OLED can show an excellent image without problems in viewing angle and afterimage.

Such an OLED is fabricated by stacking a plurality of films, such as organic and metal films, on a glass substrate. Accordingly, a cluster type, in which a plurality of unit chambers performing a series of unit processes are connected around a circular transfer chamber, is mainly used in the past and is configured to perform substrate transfer and device process when the glass substrate is disposed in a horizontal state between the respective chambers. Such a cluster type has an advantage in performing a series of processes fast and continuously and also has an advantage in exchanging of a deposition mask which is essential for fabricating the OLED.

On the other hand, recently so called three primary colors independent pixel type of OLED, in which Blue (B), Green (G) and Red (R) luminescent layers are sequentially formed on a large area substrate by using a Fine Metal Mask (FMM), is paid attention. Such a three primary colors independent pixel type is known to have good color purity and light efficiency, and to have an advantage in ensuring the price competitiveness.

However, in the case of the three primary colors independent pixel type, since Blue (B), Green (G) and Red (R) luminescent layers should be sequentially formed in respective independent process chambers, an in-line type, in which the process chambers performing the respective unit processes are serially connected, is adequate. Thus, there is a necessity of converting the traditional cluster type into the in-line type. However, comparing with the cluster type, the in-line type has problems of higher cost for setting up a production line due to many overlapping equipments and of lower productivity due to slow process time.

In the case of the related art cluster type, since a substrate is horizontally disposed to perform a film process (organic film deposition process), there is a considerable difficulty in fabricating a device due to a phenomenon of severe substrate bending. Also, since a deposition mask for a large area substrate has a weight over few hundred kilograms, the phenomenon of substrate bending may be aggravated to cause a severe problem such as fracture of the substrate.

The present disclosure provides an apparatus for depositing a film, a method for depositing a film, and a system for depositing a film that can attain high productivity by processing a plurality of substrates simultaneously and minimizing the process standby time such as time for disposal/alignment of the substrates and deposition masks.

The present disclosure also provides an apparatus for depositing a film, a method for depositing a film, and a system for depositing a film that can reduce the setting cost of the production line by maximizing the common use of a commonly usable equipment.

The present disclosure also provides an apparatus for depositing a film, a method for depositing a film, and a system for depositing a film that can overcome the phenomenon of substrate bending by disposing a substrate in a vertical state to perform a film process for the substrate.

In accordance with an exemplary embodiment, there is provided an apparatus for depositing a film including a chamber configured to provide a reaction space; first and second substrate holders spaced apart from each other and installed in the chamber; and a deposition source which is installed between the first and second substrate holders and configured to sequentially supply a deposition raw material in directions of the first and second substrate holders.

The first and second substrate holders may support a substrate in a vertical state.

The first and second substrate holders may include a stage configured to support the substrate and a clamp configured to clamp the substrate stably placed on the stage.

The first and second substrate holders may further include a driving unit configured to stand the stage to be in a vertical state or to lay down the stage to be in a horizontal state.

The deposition source may be rotatable between the first and the second substrate holders.

The deposition source may be one of point-type, line-type and plane-type deposition sources.

The chamber may be connected to a mask chamber, which is configured to provide a deposition mask to each of the first and second substrate holders or to replace the deposition mask.

In accordance with another exemplary embodiment, there is provided a method of depositing a film, including: setting up first and second process lines for each of a plurality of chambers connected serially; loading a first substrate transferred along the first process line into a specified one of the plurality of chambers to perform a unit process; loading a second substrate transferred along the second process line into the specified one of the plurality of chambers to perform an advance preparation necessary for a second unit process while the unit process of the first substrate is performed; and when the first unit process is completed, performing the second unit process for the second substrate for which the advance preparation is completed.

The first unit process may include supplying a raw material in a direction of the first substrate by using the deposition source, and the second unit process may include supplying the raw material in a direction of the second substrate by rotating the deposition source.

The first and second unit processes may be performed by evaporating and supplying an organic material.

The above method may further include unloading the first substrate from the specified chamber while the unit process of the second substrate is performed.

The first and second substrates may be disposed and transferred in a horizontal state.

The first and second substrates may be disposed and transferred in a vertical state.

The first and second substrates may be disposed in a vertical state to perform the unit processes.

The advance preparation may include at least one of aligning the second substrate at a predetermined position, and disposing and aligning a deposition mask on the second substrate.

In accordance with yet another exemplary embodiment, there is provided a system for depositing a film including: a plurality of chambers connected serially; and first and second process lines formed in the plurality of chambers, wherein at least one of the plurality of chambers may be provided therein with a first substrate holder included in the first process line, a second substrate holder included in the second process line and spaced apart from the first substrate holder, and a deposition source installed between the first and second substrate holders and configured to supply a deposition raw material.

The deposition source may be rotatable between the first and second substrate holders.

The plurality of chambers may include a plurality of process chambers configured to perform a unit process, and a plurality of buffer chambers connected between the plurality of process chambers.

The plurality of chambers may be connected to a mask chamber configured to supply a deposition mask or replace the deposition mask.

According to the present disclosure, since sequential film processes can be performed with respect to two or more process lines provided in each of the process chambers through the single deposition source provided in each of the process chambers, fabrication costs can be saved and at the same time productivity can be enhanced.

In addition, while a film process is performed with respect to a substrate on one process line, substrate transfer and substrate/mask alignment for another substrate on the other process line can be performed to shorten the standby time, thereby further enhancing the productivity.

Further, since a substrate is disposed in a horizontal state when the substrate is transferred, the occurrence of fracture of the substrate is low during transfer of the substrate, and since the substrate is disposed in a vertical state during the film process, the phenomenon of the substrate bending occurs less, which makes easy the fabrication of a device.

Exemplary embodiments can be understood in more detail from the following description taken in conjunction with the accompanying drawings, in which:

FIG. 1 is a plane view illustrating a system for depositing a film in accordance with an exemplary embodiment;

FIG. 2 is a plane view illustrating any of the plurality of chambers included in the film depositing system of FIG. 1; and

FIGS. 3 through 8 are plane views explaining a unit process for a system for depositing a film in accordance with an exemplary embodiment.

110: Loading chamber 120: Unloading chamber

200: Process chamber 310, 320: Mask chamber

511: Substrate inlet 512: Substrate outlet

520: Substrate holder 521: Stage

522: Clamp 523: Temperature control device

600: Buffer chamber 410: Raw material feeder

G: Substrate M: Mask

PL: Process line

Hereinafter, specific embodiments will be described in detail with reference to the accompanying drawings. The present invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art. In the figures, like reference numerals refer to like elements throughout.

FIG. 1 is a film depositing system in accordance with an exemplary embodiment, and FIG. 2 is a plane view illustrating any of the plurality of chambers included in the film depositing system of FIG. 1.

Referring to FIGS. 1 and 2, the film depositing system includes a loading chamber positioned at a front end, an unloading chamber 120 positioned at a rear end, and a plurality of unit chambers 200, 600 arranged in an in-line manner between the loading chamber 110 and the unloading chamber 120. At this time, the plurality of unit chambers 200, 600 are arranged along two process lines PL1 and PL2 in a row direction. While a unit process is performed on the first process line PL1, an advance preparation for the second process line PL2 is performed such that a unit process on the second process line may be continuously performed after the unit process on the first process line PL1 has been completed.

The loading chamber 110 is configured to receive a substrate G, which is subject to a predetermined preceding process, in an atmospheric pressure state, and load the substrate G into a process chamber 210 in a vacuum state. The unloading chamber 120 is configured to receive the substrate G, which is subject to a series of unit processes, from a process chamber 263, and unload the substrate G to a space under the atmospheric pressure state. Therefore, the loading chamber 110 and the unloading chamber 120 are configured to be converted from the atmospheric pressure state to the vacuum state or vice versa. Also, although not shown in the drawings, the loading chamber 110 and the unloading chamber 120 may be connected to a substrate transferring means such as a robot arm, and a substrate carrying unit such as a cassette.

The plurality of unit chambers 200, 600 include a plurality of

process chambers

210, 220, 230, 240, 250, 260 (200), and a plurality of buffer chambers 610, 620 (600) connected between the plurality of

process chambers

210, 220, 230, 240, 250, 260 (200). The buffer chamber 600 provides an arbitrary space where the substrate G stays for a while for a standby of a process. Also, a first mask chamber 310 providing a first mask M1 onto the first process line PL1 is connected to each of the process chambers 200 arranged on the first process line PL1, and a second mask chamber 320 providing a second mask M2 onto the second process line PL2 is connected to each of the process chambers 200 arranged on the second process line PL2. Deposition masks M1, M2, which are being used in a film depositing process or for the exchange are stored in the first and

second mask chambers

310, 320. Of course, since the first and

second mask chambers

310, 320 can be commonly used, only the single common mask chamber can be connected to each of the process chambers 200. Also, a raw material feeder 410 for supplying a raw material to a deposition source 540 may be connected to some of the respective unit chambers.

The plurality of process chambers 200 are configured to perform a series of unit processes on the substrate G. For example, an exemplary embodiment is configured to form an OLED including a hole injection layer HIL, a hole transport layer HTL, an emitting material layer EML, an electron transport layer ETL, an electron injection layer EIL sequentially formed on the substrate G on which an anode is formed. For this purpose, the HIL forming chamber 210, the HTL forming chamber 220, the EML forming chamber 230, the ETL forming chamber 240, the EIL forming chamber 250, and the cathode forming chamber 260 are connected serially. At this time, the EML forming chamber 230 may further include a blue (B) EML forming chamber 231, a green (G) EML forming chamber 232, and a red (R) EML forming chamber 233 so as to show natural colors, and the cathode forming chamber 260 may further include a plurality of

cathode forming chambers

261, 262, 263 so as to form the cathode in a multi-layer structure.

One of the plurality of process chambers is made in a rectangular box form to provide a reaction space that can process the substrate G. Also, each of the plurality of process chambers 200 has a first substrate inlet 511a, a first substrate holder 520, and a first substrate outlet 512a positioned along the first process line PL1, and has a second substrate inlet 511b, a second substrate holder 530, and a second substrate outlet 512b positioned along the second process line PL2. The first and

second substrate inlets

511a and 511b are formed spaced apart from each other at one sidewall of the process chamber 200, and the first and

second substrate outlets

512a and 512b are formed space apart from each other at the other sidewall of the process chamber 200. The

substrate inlets

511a, 511b and the

substrate outlets

512a, 512b may be configured by slit valves.

Each of the

substrate holders

520, 530 includes a stage supporting a rear surface of the substrate G1 or G2, a clamp 522 installed in the stage 521 to clamp the substrate G1 or G2, and a driver (not shown) making the stage 521 stand in a vertical state or lie down in a horizontal state. Unlike the exemplary embodiment, in the case where the substrate G1, G2 is loaded into each of the

process chambers

210, 220, 230, 240, 250, 260, the driver may be omitted.

Inside or below the stage 521, a temperature control means 523 may be provided such that the substrate G1, G2 placed on the stage 521 may be maintained at a temperature suitable for performing a process. The temperature control means 523 may be configured by at least one of a heating means for heating the substrate G1, G2, a cooling means for cooling the substrate G1, G2, and a combination thereof. The present exemplary embodiment enhances the reactivity between the substrate G1, G2 and a deposition material layer deposited thereon by maintaining the temperature of the substrate G1, G2 at a process temperature through a cooling means.

While the state of the substrate G1, G2 placed on the stage 521 is converted from the horizontal state to the vertical state or vice versa, the clamp 522 clamps edges of the substrate G1, G2 to prevent the substrate G1, G2 from being moved. In the case of the exemplary embodiment, in order to control a thin film pattern formed on the substrate G1, G2, the deposition masks M1 and M2 each having a predetermined deposition pattern are disposed on the substrates G1 and G2, respectively. Therefore, it is preferable that the clamp 522 is configured to clamp both of the substrate G1, G2 and the deposition mask M1, M2 on the stage 521.

The first and

second substrate holders

520 and 530 are spaced apart by a predetermined distance from each other on the same horizontal plane. Herein, the predetermined distance may be equal to or greater than a distance where while one of the first and second substrate holes 520 and 530 is rotated from the vertical state to the horizontal state or vice versa, the other is not influenced by the rotating one.

The deposition source 540 is positioned between the first and

second substrate holders

520 and 530 spaced apart by the predetermined distance from each other. The deposition source 540 is disposed facing one of the substrates G1 and G2, which is rotated to the vertical state for a deposition process, and is configured to supply an evaporated raw material in a direction facing the substrate G, i.e., in a deposition surface direction. Although not shown in the drawings, the deposition source 540 has a crucible containing a raw material therein, a heating unit configured to evaporate the raw material, and an injector configured to inject the evaporated raw material. The deposition source 540 may be any one of a point-type deposition source, a line-type deposition source, and a plane-type deposition source according to a process condition. The current exemplary embodiment uses the line-type deposition source 540 including a plurality of point-

type deposition sources

541, 542 arranged in a line-type, and this line-type deposition source 540 uniformly supplies (or injects) the raw material on a whole area of the substrate G1, G2 while reciprocated in left and right directions by a reciprocating driving member.

In particular, the deposition source 540 according to the exemplary embodiment is configured such that the deposition source 540 is rotatable in a direction of the second substrate holder 530 from the first substrate holder 520 or in a direction of the first substrate holder 520 from the second substrate holder 530 by a 180 degrees to inject the raw material. Therefore, although two rows of process lines are formed in a single chamber, it is possible to perform processes with respect to the two process lines by using the single deposition source 540.

A film depositing process using the film depositing system having the foregoing configuration will be described briefly with reference to FIG. 1.

The substrate G having the anode which is formed through a preceding process is loaded into the loading chamber 110 in the atmospheric state, and an inside of then the loading chamber 110 is converted to a vacuum state. Thereafter, the substrate G is sequentially loaded into the

process chambers

210, 220, 230, 240, 250, 260, which are arranged along the first and second process lines selected alternatingly to perform a series of unit processes. That is, the substrate G is sequentially loaded into the HJL forming chamber 210, the HTL forming chamber 220 and the

EML forming chambers

231, 232, 233 in the vacuum state. Therefore, an HIL, an HTL and an EML are sequentially formed on the anode of the substrate G. Thereafter, the resultant substrate G is sequentially loaded into the ETL forming chamber 240, the EIL forming chamber 250, and the

cathode forming chambers

261, 262, 263. Therefore, an ETL, an EJL and a multi-layered cathode are formed on the EML of the substrate G, thereby fabricating an OLED. Thereafter, the substrate G is transferred to the unloading chamber 120 and then unloaded to an outside in the atmospheric state.

Meanwhile, in the film depositing process, the substrate G may be transferred in the vertical state or horizontal state. However, in the case where the transfer of the substrate G is performed in the horizontal state, a process of converting the substrate from the horizontal state to the vertical state inside the each of the

process chambers

210, 220, 230, 240, 250, 260 is needed. Hereinafter, a process of converting the substrate from the horizontal state to the vertical state to perform a unit process will be described in more detail with reference to FIGS. 3 through 8. FIGS. 3 through 8 are plane views for explaining unit processes for the film depositing system according to an exemplary embodiment.

Referring to FIG. 3, the first substrate G1 transferred in the horizontal state along the first process line is loaded into the process chamber 200 through the first substrate inlet 511a, and the loaded first substrate G1 is placed on the stage of the first substrate holder 520 disposed in the horizontal state. Thereafter, the first deposition mask M1 (see FIG. 4) is loaded into the process chamber 200 from the first mask chamber 310 connected to the process chamber 200 and is placed and aligned on the first substrate G1. Thereafter, as shown in FIG. 4, the clamp 522 of the first substrate holder 520 clamps the first substrate G1 and the first deposition mask M1 placed thereon, and then the first substrate holder 520 is rotated by 90 degrees to convert the first substrate G1 to the vertical state. As a result, one outer surface of the first substrate G1 faces an injection direction of the deposition source 540. An evaporated raw material is injected onto the one outer surface through the deposition source 540 to perform a first film process with respect to the first substrate G1.

Referring to FIG. 5, the second substrate G2 transferred in the horizontal state along the second process line is loaded into the process chamber 200 through the second substrate inlet 511b at the same time with or after the loading of the first substrate G1. The loaded second substrate G2 is placed on the stage of the second substrate holder 530 disposed in the horizontal state, and the second deposition mask M2 (see FIG. 6) supplied from the second mask chamber 320 connected to the process chamber is placed and aligned on the second substrate G2. Thereafter, as shown in FIG. 6, the clamp 512 of the second substrate holder 530 clamps the second substrate G2 and the second deposition mask M2 placed thereon and then the second substrate holder 530 is rotated by 90 degrees to convert the second substrate G2 to the vertical state. At this time, it is preferable that the disposal/alignment process of the second substrate G2 and the disposal/alignment process of the second deposition mask M2 are performed during the first film process. By doing so, the process standby time can be shortened and thus the productivity can be enhanced.

Referring to FIG. 7, after the first film process is completed, the injection direction of the deposition source 540 is rotated by 180 degrees with respect to the first substrate holder 520. As a result, one outer surface of the second substrate G2 faces the injection direction of the deposition source 540. Thereafter, an evaporated raw material is injected onto the one outer surface of the second substrate G2 to perform a second film process with respect to the second substrate G2. Meanwhile, while the second film process is performed, the first substrate holder 520 returns to the original horizontal state and the first deposition mask M1 is separated from the first substrate G1 as shown in FIG. 8. Thereafter, the first substrate G1 is unloaded through the first substrate outlet 512a and is then loaded into a subsequent chamber. Meanwhile, after the first and second film processes are completed, the first and second deposition masks M1 and M2 separated from the first and second substrates G1 and G2 stay at the respective corresponding chambers for the use in the subsequent processes. In the case where replacement of the first mask and/or the second mask is necessary due to contamination or damage caused by the use of a long-term period, the first and second masks M1 and M2 are transferred to the first and

second mask chambers

310, 320 and are unloaded to the atmosphere. Thereafter, the first and second deposition masks M1 and M2 are reused through a work such as cleaning, repair or the like. Of course, the first and

second mask chambers

310, 320 may be provided with a plurality of extra deposition masks, which are being used for replacement of the used deposition masks.

Thus, since the film depositing system according to the exemplary embodiments can perform continuous film processes with respect to two or more process lines PL1, PL2 provided in each of the

process chambers

210, 220, 230, 240, 240, 250, 260 through the single deposition source 540 provided in each of the

process chambers

210, 220, 230, 240, 240, 250, 260, fabrication costs can be saved and at the same time productivity can be enhanced. Also, while a film process is performed with respect to the substrate G1 on one process line PL1, substrate transfer and substrate/mask alignment for the substrate G2 on the other process line PL2 can be performed to shorten the standby time, thereby further enhancing the productivity.

Although an apparatus for depositing a film, a method for depositing a film and a system for depositing a film have been described with reference to the specific embodiments, it is not limited thereto. Therefore, it will be readily understood by those skilled in the art that various modifications and changes can be made thereto without departing from the spirit and scope of the present invention defined by the appended claims.

Claims

An apparatus for depositing a film, comprising:

a chamber configured to provide a reaction space;

first and second substrate holders spaced apart from each other and installed in the chamber; and

a deposition source which is installed between the first and second substrate holders and configured to sequentially supply a deposition raw material in directions of the first and second substrate holders.
The apparatus of claim 1, wherein the first and second substrate holders are configured to support a substrate in a vertical state.
The apparatus of claim 2, wherein the first and second substrate holders comprise:

a stage configured to support the substrate; and

a clamp configured to clamp the substrate stably placed on the stage.
The apparatus of claim 2, wherein the first and second substrate holders further comprise a driving unit configured to stand the stage to be in a vertical state or to lay down the stage to be in a horizontal state.
The apparatus of claim 1, wherein the deposition source is rotatable between the first and second substrate holders.
The apparatus of claim 1, wherein the deposition source is one of point-type, line-type and plane-type deposition sources.
The apparatus of claim 1, wherein the chamber is connected to a mask chamber which is configured to provide a deposition mask to each of the first and second substrate holders or to replace the deposition mask.
A method of depositing a film, comprising:

setting up first and second process lines for each of a plurality of chambers connected serially;

loading a first substrate transferred along the first process line into a specified one of the plurality of chambers to perform a first unit process;

loading a second substrate transferred along the second process line into the specified one of the plurality of chambers to perform an advance preparation necessary for a second unit process while the unit process of the first substrate is performed; and

when the first unit process is completed, performing the second unit process for the second substrate for which the advance preparation is completed.
The method of claim 8, wherein the first unit process comprises supplying a raw material in a direction of the first substrate by using the deposition source, and the second unit process comprises supplying the raw material in a direction of the second substrate by rotating the deposition source.
The method of claim 9, wherein the first and second unit processes are performed by evaporating and supplying an organic material.
The method of claim 8, further comprising unloading the first substrate from the specified chamber while the unit process of the second substrate is performed.
The method of claim 8, wherein the first and second substrates are disposed and transferred in a horizontal state.
The method of claim 8, wherein the first and second substrates are disposed and transferred in a vertical state.
The method of claim 8, wherein the first and second substrates are disposed to be in a vertical state to perform the unit processes.
The method of claim 8, wherein the advance preparation comprises at least one of aligning the second substrate at a predetermined position, and arranging and aligning the deposition mask on the second substrate.
A system for depositing a film, comprising:

a plurality of chambers connected serially; and

first and second process lines formed in the plurality of chambers,

wherein at least one of the plurality of chambers is provided therein with:

a first substrate holder included in the first process line;

a second substrate holder included in the second process line and spaced apart from the first substrate holder; and

a deposition source installed between the first and second substrate holders and configured to supply a deposition raw material.
The system of claim 16, wherein the deposition source is rotatable between the first and second substrate holders.
The system of claim 16, wherein the deposition source is one of point-type, line-type and plane-type deposition sources.
The system of claim 16, wherein the plurality of chambers comprise:

a plurality of process chambers configured to perform a unit process; and

a plurality of buffer chambers which are connected between the plurality of process chambers.
The system of claim 19, wherein the plurality of process chambers are connected to a mask chamber configured to supply a deposition mask or to replace the deposition mask.