JP4843873B2 - Oblique deposition apparatus and oblique deposition method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an improvement in an oblique vapor deposition apparatus and an oblique vapor deposition method.
[0002]
[Prior art]
Generally, a vapor deposition apparatus is an apparatus that forms a vapor deposition film by heating a vaporization source in a vacuum chamber (vapor deposition chamber) to form a vapor flow and depositing constituents of the vapor flow on a substrate. When a vapor deposition film is formed on the surface of the substrate by a vapor deposition method using a normal vapor deposition apparatus, the substrate is disposed substantially perpendicular to the central axis of the vapor deposition flow from the vapor deposition source, and the vaporization flow is irradiated on the surface of the substrate. A vapor deposition film is formed.
[0003]
However, in the vapor deposition method using such a normal vapor deposition apparatus, when the vapor deposition process is performed on a relatively large area substrate, the thickness of the vapor deposition film varies between the central portion and the peripheral portion of the substrate. have.
[0004]
Therefore, a vapor deposition apparatus has been proposed in which the substrate is horizontally moved in a direction perpendicular to the central axis of the evaporation flow. However, in the vapor deposition apparatus that moves the substrate in the horizontal direction in the vacuum chamber, the chamber must be enlarged in the horizontal direction corresponding to the amount of movement, which is against the demand for downsizing the apparatus. In addition, it is impossible to perform vapor deposition on a plurality of substrates at the same time.
[0005]
In addition, an oblique vapor deposition apparatus and an oblique vapor deposition method in which a target substrate is disposed obliquely at an acute angle with respect to the central axis of the evaporation flow have been proposed. In this conventional oblique deposition apparatus and oblique deposition method, the horizontal width of the chamber can be reduced. In addition, in the case of oblique vapor deposition, it is possible to form a vapor deposition film only on the tops of minute convex portions formed on the surface of the substrate without using a metal vapor deposition mask.
[0006]
However, in the conventional oblique deposition apparatus and oblique deposition method, the substrate is carried into the vacuum chamber in a horizontal state at the upper part of the vacuum chamber, and the substrate is moved from the horizontal state to the central axis of the evaporation flow inside the chamber. On the other hand, it is rotated to a position where it has an acute angle of about 15 degrees, and the evaporation process is performed in that state.
[0007]
Therefore, the conventional apparatus requires a mechanism for rotating the substrate at the upper part of the chamber, and the upper part of the chamber becomes larger and its height increases, which is contrary to the demand for downsizing of the apparatus. In addition, the loading height at which the substrate is loaded into the chamber is increased, and it is necessary to lift the substrate to the loading height. Furthermore, the mechanism for rotating the substrate and the mechanism for holding the substrate become complicated. Furthermore, particularly in the case of a large-sized thin substrate, the substrate tends to bend, and the film thickness distribution and the vapor deposition angle distribution of the vapor deposition film tend to deteriorate.
[0008]
In particular, in the case of a large substrate, the vapor deposition angles are not the same at both ends of the substrate, and the film thickness distribution of the vapor deposition film tends to be uneven. Furthermore, when forming a vapor deposition pattern with a metal vapor deposition mask, it is necessary to design the mask in consideration of the fact that the vapor deposition angle is not the same at both ends of the substrate, and the mask pattern shape becomes complicated. Have. Furthermore, the operation for positioning the mask in close contact with the substrate is complicated.
[0009]
In addition, the conventional oblique vapor deposition apparatus has a structure in which only one substrate can be processed in one vacuum chamber, so that the use efficiency of the vapor deposition material is very poor to about several percent or less. The unnecessary vapor deposition material adheres in large amounts to the inner wall surface of the chamber and the deposition plate, causing problems such as dust and dust, and the maintenance of the apparatus is complicated.
[0010]
[Problems to be solved by the invention]
The present invention has been made in view of such a situation, and it is possible to form a vapor deposition film so that the film thickness distribution and the vapor deposition angle distribution are uniform even in a large and thin substrate, and at the same time, a plurality of sheets can be formed simultaneously. It is an object of the present invention to provide an oblique vapor deposition apparatus and an oblique vapor deposition method that can perform vapor deposition on the substrate, have excellent productivity, can further reduce the size of the apparatus, and are excellent in maintainability.
[0011]
[Means for Solving the Problems]
In order to achieve the above object, an oblique vapor deposition apparatus according to the present invention comprises:
A deposition chamber in which a deposition source is disposed;
And a substrate holder for disposing at least one substrate to be vapor-deposited in the vapor deposition chamber at a predetermined distance from the central axis of the vapor flow from the vapor deposition source.
[0012]
Preferably, the apparatus of the present invention further includes a moving mechanism for moving the substrate holder in parallel along the central axis of the vapor flow.
[0013]
Preferably, in the deposition chamber, a fixed deposition preventing plate is disposed to prevent a substance constituting a vapor flow from the deposition source from adhering to an inner wall of the chamber other than the substrate.
The substrate is disposed outside the fixed deposition preventing plate and inside the chamber, and a vapor flow from the deposition source passes through an opening formed in the stationary deposition plate, and the substrate It is designed to irradiate the surface.
[0014]
Preferably, a movable deposition preventing plate for controlling the opening degree of the opening is mounted on the opening of the fixed deposition preventing plate.
[0015]
Preferably, the movement prevention plate moves in synchronization with the movement of the substrate.
[0016]
Preferably, an angle formed by a line connecting the lower end edge of the opening and the center of the vapor deposition source and the central axis of the vapor flow is an acute angle. The angle is not particularly limited, but is preferably 10 to 20 degrees, more preferably about 15 degrees.
[0017]
Preferably, the substrate holder is arranged so that a plurality of substrates are arranged around the central axis of the vapor flow.
[0018]
In the vapor deposition method according to the present invention, at least one substrate to be vapor-deposited in the vapor deposition chamber is disposed substantially parallel to the central axis of the vapor flow from the vapor deposition source at a predetermined distance to perform the vapor deposition treatment. It is characterized by.
[0019]
Preferably, the deposition process is performed while moving the substrate in parallel along the central axis of the vapor flow.
[0020]
Preferably, a fixed deposition preventing plate is disposed in the deposition chamber so as to prevent a substance constituting a vapor flow from the deposition source from adhering to an inner wall of the chamber other than the substrate,
The substrate is disposed outside the fixed adhesion preventing plate and inside the chamber, and a vapor flow from the vapor deposition source passes through an opening formed in the fixed adhesion preventing plate, and the substrate Irradiate the surface.
[0021]
Preferably, a movable deposition prevention plate is attached to the opening of the fixed deposition prevention plate,
While moving the substrate, the movement prevention plate is moved in synchronization with the movement of the substrate, and the deposition is performed while controlling the opening of the opening.
[0022]
Preferably, the deposition source and the opening are arranged so that an angle formed between a line connecting the lower end edge of the opening and the center of the deposition source and a central axis of the vapor flow is an acute angle, and a deposition process is performed. I do.
[0023]
Preferably, a plurality of substrates are arranged around the central axis of the vapor flow and vapor deposition is performed.
[0024]
Preferably, a plurality of minute convex portions are formed on the surface of the substrate to be vapor deposited, and a vapor deposition film is formed on top of these minute convex portions.
[0025]
Preferably, a vapor deposition mask having a predetermined pattern is positioned on the surface of the substrate to be vapor deposited, and a vapor deposition film is formed on the surface of the substrate not covered with the vapor deposition mask.
[0026]
[Action]
According to the oblique vapor deposition apparatus and the oblique vapor deposition method according to the present invention, a plurality of (for example, 2 to 6, preferably 4) substrates can be arranged around the central axis of the vapor flow in a single chamber. At the same time, vapor deposition of a plurality of substrates becomes possible. As a result, productivity is improved. Further, since the vapor deposition process is simultaneously performed on a plurality of substrates as described above, the use efficiency of the vapor deposition material in the vapor deposition source is improved by a multiple of the number corresponding to the number of substrates that can be simultaneously processed. As a result, the amount of unnecessary vapor deposition material adhering to the deposition preventing plate and the inner wall of the chamber is reduced, and the frequency of maintenance of the apparatus can be reduced. Further, since the throughput of the vapor deposition process is improved, the power consumption of the vapor deposition apparatus can be reduced.
[0027]
Furthermore, the vapor deposition apparatus and vapor deposition method according to the present invention do not require a mechanism for rotating the substrate in the upper part of the chamber, so that the size of the entire apparatus can be made compact.
[0028]
Furthermore, since the substrate is disposed along the vertical position direction parallel to the central axis of the evaporation flow inside the chamber, even when the substrate is thin, the deflection of the substrate can be minimized. As a result, a vapor deposition film having a uniform film thickness can be formed on the surface of the substrate.
[0029]
In the present invention, by performing the deposition process while moving the substrate in parallel along the central axis of the vapor flow, it becomes possible to perform the deposition process with a uniform deposition angle over the entire surface of the substrate. Also in this respect, the thickness of the deposited film becomes uniform. In the present invention, the vapor deposition angle is an angle formed by a straight line of the vapor flow irradiated from the vapor deposition source toward a predetermined position where the vapor deposition film is to be formed on the surface of the substrate and the reference surface of the substrate.
[0030]
In addition, since it is possible to perform the vapor deposition process with a uniform vapor deposition angle over the entire surface of the substrate, it is easy to design a mask pattern that is positioned and closely adhered to the surface of the substrate, and also according to the mask pattern. Highly accurate deposition is possible. Further, the mask structure is simplified, and positioning and adhesion to the surface of the substrate is facilitated.
[0031]
It should be noted that the central axis of the vapor flow generally coincides with the vertical axis of the chamber, so that the substrate can be moved in parallel along the central axis of the vapor flow at a relatively low position in the chamber. The substrate can be delivered. As a result, the substrate insertion height into the chamber can be made as low as the substrate insertion height in a general thin film forming apparatus, and the substrate can be easily transported.
[0032]
In the present invention, the vapor deposition plate is moved through the opening toward the inner wall of the chamber by performing the deposition while moving the movement deposition plate in synchronization with the movement of the substrate and controlling the opening degree of the opening. Can be shut off. As a result, it is possible to reduce adhesion of unnecessary vapor deposition material to the inner wall of the chamber.
[0033]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be described based on embodiments shown in the drawings.
FIG. 1 is a schematic longitudinal sectional view of an oblique vapor deposition apparatus according to an embodiment of the present invention,
FIG. 2 is a transverse sectional view taken along line II-II shown in FIG.
FIG. 3 is a cross-sectional view of an essential part showing the movement of the substrate shown in FIG.
FIG. 4 (A) is a cross-sectional view of main parts showing an example of the oblique vapor deposition method of the present invention, FIG. 4 (B) is a cross-sectional view of main parts showing an example of a conventional oblique vapor deposition method,
FIG. 5 is a plan view of a mask used in the vapor deposition method of the present invention,
FIG. 6 (A) is a cross-sectional view of the main part showing another example of the oblique vapor deposition method of the present invention, FIG. 6 (B) is a cross-sectional view of the main part showing another example of the conventional oblique vapor deposition method,
FIG. 7 is a schematic cross-sectional view of a vapor deposition apparatus according to another embodiment of the present invention.
[0034]
As shown in FIGS. 1 and 2, an oblique vapor deposition apparatus 2 according to an embodiment of the present invention includes a vertically long cylindrical vacuum chamber (deposition chamber) 4. An exhaust device (not shown) is connected to the vacuum chamber 4 so that the degree of vacuum is such that vacuum deposition can be performed inside the chamber 4.
[0035]
Inside the vacuum chamber 4, there is arranged a fixed fixing plate 14 having a hollow rectangular column shape elongated in the vertical direction. A vapor deposition source 8 is attached to the center of the bottom of the fixed adhesion preventing plate 14. The vapor deposition source 8 is a source of vapor deposition material, and is heated by, for example, an electron beam to generate a vapor flow F1 composed of vaporized molecules. In the present embodiment, the central axis C1 of the steam flow F1 coincides with the central axis of the chamber 4 and the central axis of the fixed adhesion preventing plate 14 and extends in the vertical direction.
[0036]
Four substrate holders 12 are arranged inside the chamber 4 and at the upper part of the outer periphery of the fixed adhesion preventing plate 4 in substantially parallel to the central axis C1. Each substrate holder 12 holds a substrate 10 to be subjected to vapor deposition. The substrate holder 12, together with the substrate 10, can be reciprocated in the vertical direction V1 parallel to the central axis C1, as shown in FIG. 3, by a first vertical movement mechanism (not shown) inside the chamber 4. Yes. The first vertical movement mechanism is not particularly limited, and a drive motor, a drive actuator, a drive link, a drive wire, or the like is used. The four substrate holders 12 are all moved synchronously and hold the same vertical position.
[0037]
The fixed adhesion preventing plate 14 has four openings 16 on the upper four sides thereof. As shown in FIG. 2, the lateral width of each opening 16 is determined so that the vapor flow F <b> 1 from the vapor deposition source 8 irradiates the entire area of the vapor deposition target surface of the substrate 10 and does not face the inner wall of the chamber 4. Further, as shown in FIG. 1, the lower end edge 16 a of each opening 16 has a vapor flow from the vapor deposition source 8 in a state where the substrate 10 is located at the top in the vertical direction inside the chamber 4 together with the substrate holder 12. F <b> 1 is determined so as to irradiate the lowest end of the deposition scheduled surface of the substrate 10 and not toward the inner wall of the chamber 4. Further, the lower end edge 16a of each opening 16 is determined so that an angle θ1 formed by a line connecting the lower end edge 16a and the center of the vapor deposition source 8 and the central axis C1 of the vapor flow F1 is about 15 degrees. Is done. The horizontal distance H1 (shown in FIG. 3) from the surface of the substrate 10 to the center of the vapor deposition source 8 is not particularly limited, but is 200 to 800 mm, preferably around 500 mm in this embodiment.
[0038]
In addition, the upper end edge 16b of each opening portion 16 is a state in which the substrate 10 is positioned at the top in the vertical direction inside the chamber 4 together with the substrate holder 12, and the vapor flow F1 from the deposition source 8 is deposited on the substrate 10. It is determined so as to irradiate the uppermost end of the predetermined surface and not toward the inner wall of the chamber 4.
[0039]
As shown in FIG. 3, a movement prevention plate 18 is attached to each opening 16 so as to be reciprocally movable along the vertical direction V <b> 2 with respect to the fixed prevention plate 14. Each movement prevention plate 18 is driven by a second vertical movement mechanism (not shown) similar to the first vertical movement mechanism for moving the substrate holder 12 along the vertical direction V1. The first vertical movement mechanism and the second vertical movement mechanism are electrically or mechanically connected and can be driven synchronously.
[0040]
That is, as shown in FIG. 3, in synchronization with the movement of the substrate 10 together with the substrate holder 12 in the vertical direction V <b> 1, the movement prevention plate 18 also moves in the vertical direction V <b> 2 and the opening degree of the opening 16 is increased. The vapor flow F <b> 1 from the deposition source 8 is deviated from the surface of the substrate 10 and is not directed toward the inner wall of the chamber 4.
The fixed adhesion prevention plate 14 and the movement prevention adhesion plate 18 are mounted for the purpose of reducing adhesion of unnecessary vapor deposition materials to the inner wall of the chamber 4.
[0041]
As shown in FIGS. 1 and 2, a load lock chamber 6 is connected to a midway position in the vertical direction of the vacuum chamber 4. A connecting portion between the load lock chamber 6 and the chamber 4 is provided with a door or shutter that can be freely opened and closed, and the substrate 10 and the chamber 10 and the load lock chamber 6 are opened between the chamber 4 and the load lock chamber 6 with the door or shutter open. The substrate holder 12 can be taken in and out. Further, when the vapor deposition process is performed in the chamber 4, the door or the shutter is closed, and the inside of the chamber 4 is sealed. The load lock chamber 6 is provided with a door or shutter that allows the substrate 10 and the holder 12 to be taken in and out of the load lock chamber 6.
[0042]
The vertical position at which the load lock chamber 6 is attached to the chamber 4 is the first vertical position in the state where the substrate 10 and the substrate holder 12 are moved to the lowest position by the first vertical movement mechanism. In this position, the substrate 10 and the substrate holder 12 can be transferred to and from the load lock chamber 6 from the moving mechanism. In addition, when vapor deposition is performed in a state where a metal vapor deposition mask is attached to the surface of the substrate 10, the mask is preferably positioned and attached to the surface of the substrate inside the load lock chamber 6. .
[0043]
Delivery of the substrate 10 and the substrate holder 12 between the load lock chamber 6 and the chamber 4 is preferably performed automatically by a robot hand or other mechanism. In addition, in order to transfer the four substrates 10 (including the substrate holder) arranged in four directions inside the chamber 4 in the single load lock chamber 6, the fixed deposition plate 14 is moved to the movable deposition plate. An index rotation mechanism that rotates the index around the central axis C <b> 1 is preferably mounted in the chamber 4 together with the substrate 18 and the substrate holder 12.
[0044]
In the present invention, as shown in FIG. 7, two load lock chambers 6 are connected around the chamber 4, the substrate 10 is discharged in one load lock chamber 6, and the substrate is discharged in the other load lock chamber 6. By loading 10, the substrate can be loaded and discharged simultaneously.
[0045]
If vapor deposition is performed using the oblique vapor deposition apparatus 2 according to the present embodiment, the vapor deposition processing of four substrates 10 can be simultaneously performed in the single chamber 4. As a result, productivity is improved. Further, since the vapor deposition process is simultaneously performed on the four substrates 10 in this way, the use efficiency of the vapor deposition material in the vapor deposition source 8 is improved by four times the number corresponding to the number of the substrates 10 that can be simultaneously processed. As a result, the amount of unnecessary vapor deposition material adhering to the deposition preventing plates 14 and 18 and the inner wall of the chamber 4 is reduced, and the frequency of maintenance of the apparatus 2 can be reduced. Furthermore, since the throughput of the vapor deposition process is improved, the power consumption of the vapor deposition apparatus 2 can be reduced.
[0046]
In this vapor deposition method using the vapor deposition apparatus 2, a mechanism for rotating the substrate at the upper portion of the chamber 4 is not required, so that the size of the entire apparatus 2 can be made compact.
[0047]
Further, since the substrate 10 is disposed along the vertical position direction V1 parallel to the central axis C1 of the evaporation flow inside the chamber 4, even when the substrate 10 is thin, the deflection of the substrate 10 is minimized. be able to. As a result, a vapor deposition film having a uniform film thickness can be formed on the surface of the substrate 10.
[0048]
Further, in the present embodiment, the vapor deposition process is performed while moving the four substrates 10 in parallel along the central axis C1 of the vapor flow F1, so that the entire surface of the substrate 10 is shown in FIG. Thus, it becomes possible to perform a vapor deposition process in the state where vapor deposition angle (theta) 2 is uniform, and the film thickness of a vapor deposition film also becomes uniform also in this point. The vapor deposition angle θ <b> 2 is an angle formed between a straight line of the vapor flow F <b> 1 irradiated from the vapor deposition source 8 toward a predetermined position on the surface of the substrate 10 where a vapor deposition film is to be formed and a reference surface of the substrate 10. .
[0049]
Further, since it is possible to perform the vapor deposition process with the vapor deposition angle θ2 being uniform over the entire surface of the substrate 10, as shown in FIG. 4A, the mask is positioned and closely adhered to the surface of the substrate 10. 30 pattern design becomes easy, and for example, highly accurate vapor deposition can be performed according to the pattern of the mask 30 shown in FIG. Further, the structure of the mask 30 is simplified, and the positioning and adhesion of the mask 30 to the surface of the substrate 10 are facilitated.
[0050]
Conventionally, particularly in a large substrate, as shown in FIG. 4B, the deposition angles θ2 and θ3 are different depending on the position of the substrate 10, and therefore the length of the portion that is shaded by the mask 30 by the mask 30 S1 and S2 are different, and it is necessary to design the pattern of the mask 30 in consideration of this point. Further, in the conventional method, in order to make the lengths S1 and S2 of the shadowed portion of the evaporation flow F1 as much as possible, it is necessary to make the thickness of the mask 30 as thin as possible. Insufficient contact with the substrate 10 was difficult. When the adhesion of the mask 30 to the surface of the substrate 10 is incomplete, vapor deposition with an accurate pattern becomes impossible.
[0051]
On the other hand, according to the present embodiment, as shown in FIG. 4A, the vapor deposition angle θ2 becomes the same depending on the position of the substrate 10 even if it is a large substrate. The length S1 of the portion that becomes the shadow of F1 becomes the same, and the pattern design of the mask 30 becomes easy. Further, in the method of the present embodiment, the length S1 of the shadowed portion of the evaporation flow F1 is the same regardless of the position of the substrate surface, so that the mask 30 can be designed to be sufficiently thick. The strength of the mask becomes sufficient, and adhesion and positioning to the substrate 10 are facilitated.
[0052]
Moreover, using the vapor deposition apparatus 2 of this embodiment, without using the mask 30, as shown to FIG. 6 (A), on the top part of the several micro convex part 10a formed in the vapor deposition process scheduled surface in the board | substrate 10. FIG. When the deposited film 20 is formed, the deposited film 20 can be formed in a uniform pattern regardless of the surface position of the substrate 10.
[0053]
On the other hand, in the conventional method, the deposition angle changes depending on the position of the substrate surface. Therefore, as shown in FIG. 6B, the deposition film 20a is formed in a uniform pattern on the tops of the plurality of minute projections 10a. It was difficult to form.
[0054]
In the vapor deposition apparatus 2 of the present embodiment, the load lock chamber 6 is connected to the chamber 4 at a relatively low position in the chamber 4. The height of the substrate can be lowered to the same level as that of the thin film forming apparatus, and the substrate 10 can be easily transported.
[0055]
Furthermore, in the apparatus 2 of this embodiment, the film thickness of the vapor deposition film formed on the surface of the substrate 10 is controlled according to the moving speed and the number of times of reciprocating movement of the substrate 10 and the substrate holder 12 in the vertical direction V1. You can also.
[0056]
The present invention is not limited to the above-described embodiment, and can be variously modified within the scope of the present invention.
For example, in the above-described embodiment, four substrates 10 are arranged inside the chamber 4, but the number of substrates is not particularly limited, and may be 2 to 8 substrates.
[0057]
【The invention's effect】
As described above, according to the present invention, it is possible to form a vapor deposition film so that the film thickness distribution and the vapor deposition angle distribution are uniform even for a large and thin substrate, and a plurality of sheets can be formed simultaneously. It is possible to provide an oblique vapor deposition apparatus and an oblique vapor deposition method that can perform vapor deposition on the substrate, have excellent productivity, can further reduce the size of the apparatus, and are excellent in maintainability.
[Brief description of the drawings]
FIG. 1 is a schematic longitudinal sectional view of an oblique vapor deposition apparatus according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view taken along line II-II shown in FIG.
FIG. 3 is a cross-sectional view of the main part showing the movement of the substrate shown in FIG. 1;
FIG. 4A is a cross-sectional view of a main part showing an example of the oblique vapor deposition method of the present invention, and FIG. 4B is a cross-sectional view of the main part showing an example of a conventional oblique vapor deposition method.
FIG. 5 is a plan view of a mask used in the vapor deposition method of the present invention.
FIG. 6 (A) is a cross-sectional view of the main part showing another example of the oblique vapor deposition method of the present invention, and FIG. 6 (B) is a cross-sectional view of the main part showing another example of the conventional oblique vapor deposition method. .
FIG. 7 is a schematic cross-sectional view of a vapor deposition apparatus according to another embodiment of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 2 ... Diagonal vapor deposition apparatus 4 ... Chamber 6 ... Load lock chamber 8 ... Deposition source 10 ... Substrate 10a ... Minute convex part 12 ... Substrate holder 14 ... Fixed adhesion prevention board 16 ... Opening part 20 ... Deposition film 30 ... Mask

Claims (13)

A vapor deposition chamber in which a vapor deposition source is disposed and at least one substrate to be vapor-deposited in the vapor deposition chamber are disposed substantially in parallel with a predetermined distance from a central axis of a vapor flow from the vapor deposition source. a substrate holder which, was closed,
In the deposition chamber, there is disposed a fixed adhesion preventing plate for preventing substances constituting the vapor flow from the deposition source from adhering to the inner wall of the chamber other than the substrate,
The substrate is disposed outside the fixed deposition preventing plate and inside the chamber, and a vapor flow from the deposition source passes through an opening formed in the stationary deposition plate, and the substrate An oblique vapor deposition device designed to irradiate the surface of the film . Wherein the opening of the fixed deposition preventing plate, the oblique vapor deposition apparatus according to claim 1, moving deposition preventing plate for controlling the opening degree of the opening are mounted. The movement prevention plate moves in synchronization with the movement of the substrate.
Oblique vapor deposition apparatus according to 請 Motomeko 2. The angle formed between the line connecting the lower edge of the opening and the center of the vapor deposition source and the central axis of the vapor flow is an acute angle.
Oblique vapor deposition apparatus according to any one of 請 Motomeko 1-3. Oblique vapor deposition apparatus according to the substrate holder, to claim 1, further comprising a moving mechanism for moving in parallel along the central axis of the steam flow. The substrate holder is arranged so that a plurality of substrates are arranged around the central axis of the vapor flow
Oblique vapor deposition apparatus according to any one of 請 Motomeko 1-5. At least one substrate to be vapor-deposited in the vapor deposition chamber is disposed substantially parallel to the central axis of the vapor flow from the vapor deposition source at a predetermined distance ;
In the deposition chamber, a fixed adhesion prevention plate is disposed so as to prevent substances constituting the vapor flow from the deposition source from adhering to the inner wall of the chamber other than the substrate.
The substrate is disposed outside the fixed adhesion preventing plate and inside the chamber, and a vapor flow from the vapor deposition source passes through an opening formed in the fixed adhesion preventing plate, and the substrate Irradiate the surface of the metal and perform a vapor deposition process
Oblique Me deposition method. A movable deposition plate is attached to the opening of the fixed deposition plate, and while moving the substrate, the movable deposition plate is moved in synchronization with the movement of the substrate, and the opening degree of the opening is controlled. While vapor deposition
Oblique vapor deposition method according to 請 Motomeko 7. The vapor deposition source and the opening are arranged so that the angle formed between the line connecting the lower edge of the opening and the center of the vapor deposition source and the central axis of the vapor flow is an acute angle, and vapor deposition is performed.
Oblique evaporation method described in 請 Motomeko 7 or 8. Evaporation treatment is performed while moving the substrate in parallel along the central axis of the vapor flow.
Oblique vapor deposition method according to any one of 請 Motomeko 7-9. A plurality of substrates are arranged around the central axis of the vapor flow, and vapor deposition processing is performed.
Oblique vapor deposition method according to any one of 請 Motomeko 7-10. A plurality of minute projections are formed on the surface of the substrate to be vapor-deposited, and a deposition film is formed on the top of these minute projections.
Oblique vapor deposition method according to any one of 請 Motomeko 7 to 11. A vapor deposition mask having a predetermined pattern is positioned on the surface of the substrate to be vapor deposited, and a vapor deposition film is formed on the surface of the substrate not covered with the vapor deposition mask.
Oblique vapor deposition method according to any one of 請 Motomeko 7 to 12.

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