JP2007239071A - Vacuum vapor deposition apparatus - Google Patents

Vacuum vapor deposition apparatus Download PDF

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JP2007239071A
JP2007239071A JP2006066077A JP2006066077A JP2007239071A JP 2007239071 A JP2007239071 A JP 2007239071A JP 2006066077 A JP2006066077 A JP 2006066077A JP 2006066077 A JP2006066077 A JP 2006066077A JP 2007239071 A JP2007239071 A JP 2007239071A
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evaporation
vapor deposition
cells
evaporation source
source table
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Makoto Kashiwatani
誠 柏谷
Yukinori Nakamura
幸則 中村
Mitsugi Wada
貢 和田
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Fujifilm Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To easily realize a thick vapor deposition film, a multi-layered structure, and a large vapor deposition area, and to easily control the temperature of an evaporation source when depositing a layer of a radial image converter by a vacuum vapor deposition apparatus. <P>SOLUTION: First evaporation cells 14a which are respectively arranged on four parts Pa facing each vicinity of four corners of a vapor deposition area 12, and second evaporation cells 14b, 14c arrayed at the equal spacing on the parallel lines including the position of each first evaporation cell 14a are provided on an evaporation source table 13 arranged in the same plane facing the vapor deposition area 12. Evaporation cells are dispersively arranged on every arrangement position Pa of the evaporation sources for obtaining the most uniform vapor deposition film to the vapor deposition area 12, and vapor deposition is simultaneously performed by using the plurality of evaporation cells. The evaporation source tables 13 are moved along a guide rail 19, and the evaporation cells 14 arranged on the evaporation source table are successively fed to the arrangement positions Pa of the evaporation sources to perform the multi-layered vapor deposition. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、真空状態の蒸着槽内において成膜材料を加熱蒸発させて基板に蒸着させる真空蒸着装置に関するものである。   The present invention relates to a vacuum evaporation apparatus for evaporating a film forming material by heating and evaporating it on a substrate in a vacuum evaporation tank.

真空蒸着によって基板に成膜材料を蒸着する装置は種々の分野で使用されているが、近年、医療用放射線撮影にX線等の放射線に感応する光導電体を用いた放射線固体検出器が用いられるようになり、この検出器の製造にも真空蒸着装置が使われるようになった。   An apparatus for depositing a film forming material on a substrate by vacuum deposition is used in various fields, but in recent years, a radiation solid state detector using a photoconductor sensitive to radiation such as X-rays has been used for medical radiography. As a result, vacuum detectors were used to manufacture the detector.

この放射線固体検出器は、被験者の受ける放射線被爆量の減少と診断性能の向上のために、セレン等の放射線に感応する光導電体を感光体として用い、照射された放射線量に応じた量の電荷を電荷蓄積層に蓄積し、その電荷を電気的に読み出すものである。この種の放射線固体検出器は数年前から特許出願され広く知られているが、例えば、特許文献1では、検出器の応答性と読取効率を向上させるために複数材料を使用した多層構造の放射線画像検出器が提案されている。これは、記録用の放射線または放射線の励起により発せられる光に対して透過性を有する第1の電極層と、記録用の放射線または前記光の照射を受けることにより導電性を呈する記録用光導電層と、読取用の電磁波の照射を受けることにより導電性を呈する読取用光導電層と、読取用の電磁波に対して透過性を有する第2の電極層をこの順に有し、記録用光導電層と読取用光導電層との間に形成される蓄電部に蓄積された潜像電荷の量に応じたレベルの電気信号を出力させるための導電部材が第2の電極層内ないし第1の電極層と第2の電極層との間に設けられているもので、多数の層が基板上に成膜されて形成されるものである。   This radiation solid detector uses a photoconductor sensitive to radiation, such as selenium, as a photoconductor to reduce the radiation exposure received by the subject and improve diagnostic performance. The charge is accumulated in the charge accumulation layer, and the charge is electrically read out. This type of radiation solid state detector has been patented and widely known for several years. For example, in Patent Document 1, a multilayer structure using a plurality of materials is used to improve the response and reading efficiency of the detector. Radiation image detectors have been proposed. This includes a first electrode layer that is transmissive to recording radiation or light emitted by radiation excitation, and a recording photoconductivity that exhibits conductivity when irradiated with the recording radiation or the light. A recording photoconductive layer that exhibits conductivity when irradiated with an electromagnetic wave for reading, and a second electrode layer that is transparent to the electromagnetic wave for reading in this order. A conductive member for outputting an electrical signal of a level corresponding to the amount of latent image charge accumulated in the power storage unit formed between the layer and the reading photoconductive layer is provided in the second electrode layer or the first electrode layer. It is provided between the electrode layer and the second electrode layer, and is formed by forming a large number of layers on the substrate.

このような、多数かつ多種類の材料の層を基板上に成膜してなる放射線固体検出器を製造するためには多層成膜装置が必要となる。多層成膜装置としては、例えば特許文献2に示されているように、大きな第一の回転テーブルの回転軸を中心とした同一円周上に複数の小さな第二の回転テーブルを設け、その各第二の回転テーブル上に配置された複数の蒸発セルを、第一および第二回転テーブルの回転の組み合わせにより順次蒸発位置に移動する真空蒸着装置が知られている。この装置は、真空状態を保持したまま全ての蒸着処理を終えるよう、多数の蒸着材料に対応できる数の蒸発セルを配設することができるもので、多種類の蒸着材料を成膜順に蒸着処理する多層成膜に適している。   In order to manufacture such a radiation solid detector formed by depositing a large number of various layers of materials on a substrate, a multilayer film forming apparatus is required. As a multilayer film forming apparatus, for example, as shown in Patent Document 2, a plurality of small second rotary tables are provided on the same circumference around the rotation axis of a large first rotary table. There is known a vacuum vapor deposition apparatus that sequentially moves a plurality of evaporation cells arranged on a second rotary table to an evaporation position by a combination of rotations of a first rotary table and a second rotary table. This device can be equipped with a number of evaporation cells that can handle a large number of evaporation materials so that all evaporation processes can be completed while maintaining a vacuum state. Suitable for multilayer film formation.

また、特許文献3には、大面積基板を固定位置で回転させながら、これに複数の蒸発源を平行に移動させながら蒸着する多層成膜装置が記載されている。
特開2000−284056号公報 実開平5−30155号公報 特開2004−353030号公報
Patent Document 3 describes a multilayer film forming apparatus that performs deposition while rotating a large area substrate at a fixed position and moving a plurality of evaporation sources in parallel therewith.
JP 2000-284056 A Japanese Utility Model Publication No. 5-30155 JP 2004-353030 A

ところで、胸部X線検査等においては、大型の放射線画像変換パネルを用いて広範囲の画像を一度に撮影することが要望されている。さらに、放射線に対する量子効率を高め、放射線検出器の感度を上げるためには、放射線画像変換層の膜厚を大きくすることが望まれる。従って、胸部X線検査等に使用される大型の放射線画像変換パネルを製造するためには、例えば17インチ等の大きな基板に、多数の成膜材料を厚く蒸着することが必要となり、一度の蒸着に使用される成膜材料の量が従来に比べ非常に増大する。このように、大型の放射線画像変換パネルを製造する多層成膜装置においては、多種類の蒸着材料を大量に使って蒸着処理することが要求される。   By the way, in chest X-ray examinations and the like, it is desired to capture a wide range of images at once using a large radiation image conversion panel. Furthermore, in order to increase the quantum efficiency with respect to radiation and increase the sensitivity of the radiation detector, it is desired to increase the thickness of the radiation image conversion layer. Therefore, in order to manufacture a large radiation image conversion panel used for chest X-ray examination or the like, it is necessary to deposit a large number of film forming materials on a large substrate such as 17 inches, for example. The amount of film forming material used for the process is greatly increased as compared with the prior art. As described above, in a multilayer film forming apparatus for manufacturing a large radiation image conversion panel, it is required to perform a vapor deposition process using a large amount of various kinds of vapor deposition materials.

しかしながら、特許文献2に記載されているような従来の多層成膜装置では、成膜材料を全て一つの蒸発源テーブルだけに配置する構造であるため、蒸着膜の厚膜化および蒸着面積の大型化により量的に増大した蒸発源の量と数に対応するためには、蒸発源テーブルが大型化してしまい、装置全体の設置スペースが非常に大きくなるという問題がある。これは、複数の蒸発セルを隣接して配置すると、隣接する蒸発セル同士が干渉して蒸着膜の純度を損なうことになるので、これを防ぐため、隣接する蒸発セルを十分な距離をおいて配置する必要があるからである。   However, the conventional multilayer film forming apparatus described in Patent Document 2 has a structure in which all film forming materials are arranged only on one evaporation source table, so that the vapor deposition film is thickened and the vapor deposition area is large. In order to cope with the amount and number of evaporation sources that have increased in quantity due to the increase in size, there is a problem that the evaporation source table is enlarged and the installation space of the entire apparatus becomes very large. This is because if a plurality of evaporation cells are arranged adjacent to each other, the adjacent evaporation cells interfere with each other and the purity of the deposited film is impaired. It is necessary to arrange.

また、一般的に大面積基板に蒸着を行う場合は、蒸発源から放射状に偏って現れる膜厚分布の影響が大きくなり、小面積基板に蒸着する場合より膜の均一性が損なわれやすい。   In general, when vapor deposition is performed on a large-area substrate, the influence of the film thickness distribution that appears radially from the evaporation source is increased, and the uniformity of the film is more easily impaired than when vapor deposition is performed on a small-area substrate.

上記特許文献2に記載の従来装置では、一度に一個の蒸発源を用いて蒸着を行うので、大基板面全体に均一な膜を作るためには、基板を回転移動または直線移動させる必要があり、基板の温度調節が容易ではない。特に蒸着膜が厚くなるほど基板の温度が上昇して蒸着膜の性質が不均一になりやすく、基板を移動させながら精密な温度調節を行うのは極めて困難である。この種の放射線検出器では、診断に使用される医用画像の診断性能を向上させるため、均一性は極めて重要な特性であり、蒸着の際の温度調節が十分でないと膜厚の均一性が損なわれ、画質が低下して診断性能を低下させることになる。   In the conventional apparatus described in Patent Document 2, vapor deposition is performed using one evaporation source at a time. Therefore, in order to form a uniform film over the entire large substrate surface, it is necessary to rotate or linearly move the substrate. The temperature control of the substrate is not easy. In particular, the thicker the deposited film, the higher the temperature of the substrate, and the properties of the deposited film tend to become non-uniform, and it is extremely difficult to perform precise temperature control while moving the substrate. In this type of radiation detector, uniformity is an extremely important characteristic in order to improve the diagnostic performance of medical images used for diagnosis, and film thickness uniformity is impaired if temperature control during deposition is not sufficient. As a result, the image quality is lowered and the diagnostic performance is lowered.

また、蒸発源の加熱蒸発においては、一般的に蒸発セル容器を加熱して容器内の成膜材料を溶かして蒸発させるが、成膜材料の溶融液面よりも溶液内部の温度が高くなると、突沸の発生により蒸発面に揺らぎが生じ、蒸着面に欠陥を発生させる原因となるので、成膜材料および蒸発セルの温度調節は極めて大切である。しかし、上記従来装置では、一度に一個の蒸発源を用いて蒸着を行うため、蒸着膜の厚膜化および蒸着面積の大型化に比例して蒸発セルも大きくなってしまい、蒸発セル内の成膜材料の温度調節はさらに難しくなる。   In addition, in the heat evaporation of the evaporation source, generally, the evaporation cell container is heated to melt and evaporate the film forming material in the container, but when the temperature inside the solution becomes higher than the melt surface of the film forming material, The occurrence of bumping causes fluctuations on the evaporation surface and causes defects on the evaporation surface. Therefore, temperature control of the film forming material and the evaporation cell is extremely important. However, in the above conventional apparatus, since evaporation is performed using one evaporation source at a time, the evaporation cell increases in proportion to the increase in the thickness of the evaporation film and the increase in the evaporation area. Temperature control of the membrane material becomes even more difficult.

また、上記特許文献3の装置は、複数の蒸発源を同時に用いて蒸着をするため大面積基板への蒸着が可能にはなるが、蒸発源が移動するためやはり温度調節が困難である。また、多種類の蒸着材料を配置することはできないので、多種類の蒸着には適していない。   In addition, since the apparatus of Patent Document 3 performs vapor deposition using a plurality of evaporation sources at the same time, vapor deposition onto a large area substrate is possible, but the temperature adjustment is still difficult because the evaporation source moves. Moreover, since many kinds of vapor deposition materials cannot be arranged, it is not suitable for many kinds of vapor deposition.

本発明は、上記事情に鑑み、放射線画像変換器における多種類の蒸着層の厚膜化および蒸着面積の大型化を容易に達成するとともに、装置の省スペース化を可能とする真空蒸着装置を提供することを目的とするものである。   SUMMARY OF THE INVENTION In view of the above circumstances, the present invention provides a vacuum vapor deposition apparatus that easily achieves thickening of various types of vapor deposition layers and an increase in vapor deposition area in a radiation image converter, and also enables space saving of the apparatus. It is intended to do.

本発明の真空蒸着装置は、真空状態の蒸着槽内において蒸発セル内の成膜材料を加熱蒸発させて蒸着エリアに配した基板に蒸着させる真空蒸着装置であって、蒸着エリアに対向する同一面内の、蒸着エリアの四隅周辺に対向する位置にそれぞれ配置された4個の第1の蒸発セルと、各第1の蒸発セルの位置を含む平行な4本の直線上に互いに同等の間隔で並べられた一個以上の第2の蒸発セルとが配置された蒸発源テーブルが設けられており、前記直線方向に蒸発源テーブルを移動し得るように設置されたガイドを備えたことを特徴とするものである。   The vacuum vapor deposition apparatus of the present invention is a vacuum vapor deposition apparatus that heats and evaporates the film forming material in the evaporation cell in a vacuum deposition tank and deposits it on the substrate disposed in the vapor deposition area, the same surface facing the vapor deposition area 4 first evaporation cells respectively arranged at positions facing the four corners of the vapor deposition area and four parallel straight lines including the positions of the respective first evaporation cells at equal intervals. An evaporation source table in which one or more second evaporation cells arranged are arranged is provided, and a guide is provided so that the evaporation source table can be moved in the linear direction. Is.

また、蒸発源テーブルをガイドに沿って移動させることにより、蒸発源として利用する蒸発セルを前記所定の位置に移動させるようにすることができる。   Also, by moving the evaporation source table along the guide, the evaporation cell used as the evaporation source can be moved to the predetermined position.

ここで「蒸着エリアに対向する同一面内の蒸着エリアの四隅周辺に対向する位置」とは、蒸着エリアに対して複数個の蒸発源を同時に用いて最も均一な蒸着膜が得られる蒸発源の配置位置に対向する位置を意味するものである
また、「互いに同等の間隔で並べられた」とは、第1の蒸発セルと第2の蒸発セルが並べられた4本の直線上において、各直線上で対応する蒸発セルが同等の間隔で配置されていることを意味している。すなわち、蒸発源テーブルを移動したとき、各直線上の対応する蒸発セルが、常に上記「蒸着エリアの四隅周辺に対向する位置」に移動されるように配置されていることを意味する。だだし、一本の直線上に並べられる複数の蒸発セル間の間隔は一定でなくてもよい。
Here, “positions facing the periphery of the four corners of the vapor deposition area in the same plane facing the vapor deposition area” means an evaporation source that can obtain the most uniform vapor deposition film by simultaneously using a plurality of vapor deposition sources for the vapor deposition area. It means a position opposite to the arrangement position. Also, “arranged at equal intervals” means that each of the four straight lines in which the first evaporation cell and the second evaporation cell are arranged This means that the corresponding evaporation cells on a straight line are arranged at equal intervals. That is, when the evaporation source table is moved, the corresponding evaporation cells on each straight line are always arranged so as to be moved to the “positions facing the four corners of the vapor deposition area”. However, the interval between the plurality of evaporation cells arranged on one straight line may not be constant.

また、本発明の真空蒸着装置は、蒸発源テーブルを蒸着槽から出し入れする出入手段をさらに備えることが望ましい。   Moreover, it is desirable that the vacuum vapor deposition apparatus of the present invention further includes an entry / exit means for taking the evaporation source table in and out of the vapor deposition tank.

また、本発明の真空蒸着装置は、上記出入手段がガイドに沿って蒸発源テーブルを蒸着槽から出し入れするものであることが望ましい。   In the vacuum vapor deposition apparatus of the present invention, it is desirable that the above-mentioned entry / exit means is for taking in and out the evaporation source table from the vapor deposition tank along the guide.

本発明の真空蒸着装置によれば、蒸着エリアに対向する同一面内の蒸着エリアの四隅周辺に対向する位置にそれぞれ配置された第1の蒸発セルと、各第1の蒸発セルの位置を含む平行な4本の直線上に互いに同等の間隔で並べられた一個以上の第2の蒸発セルとが配置された蒸発源テーブルが設けられているから、複数個の蒸発源を静止したまま同時に使用することにより大面積基板に均一な蒸着膜を成膜することができるので、蒸発セルを移動させることにより発生する突沸の発生や蒸発面の揺らぎなどを大幅に低減できるとともに、蒸発セル及び蒸発セル内の成膜材料の温度調節も容易になる。   According to the vacuum deposition apparatus of the present invention, the first evaporation cell disposed at positions facing the periphery of the four corners of the vapor deposition area in the same plane facing the vapor deposition area, and the position of each first vaporization cell are included. Since the evaporation source table is provided with one or more second evaporation cells arranged at equal intervals on four parallel straight lines, a plurality of evaporation sources can be used simultaneously while stationary This makes it possible to form a uniform vapor deposition film on a large-area substrate, so that the generation of bumps and fluctuations of the evaporation surface caused by moving the evaporation cell can be greatly reduced, and the evaporation cell and evaporation cell The temperature of the film forming material inside can be easily adjusted.

また、上記各第1の蒸発セルの位置を含む平行な4本の直線方向に蒸発源テーブルを移動し得るように設置されたガイドを備え、蒸発源テーブルをガイドに沿って移動させることにより、複数の蒸発セルを順次蒸着位置に移動して蒸着を行うことができるので、真空を保持したまま所望の蒸着処理に応じて多種類の蒸着材料全ての蒸着処理を終えることができる。   In addition, by including a guide installed so that the evaporation source table can be moved in four parallel linear directions including the position of each of the first evaporation cells, by moving the evaporation source table along the guide, Since vapor deposition can be performed by sequentially moving the plurality of evaporation cells to the vapor deposition position, it is possible to finish the vapor deposition treatment of all the various kinds of vapor deposition materials according to a desired vapor deposition treatment while maintaining the vacuum.

また、蒸発源テーブルを蒸着槽から出し入れする出入手段をさらに備えた場合には、成膜材料の補給と蒸発源の保守性が向上する。多種類の材料を使うほど、また蒸着する膜が厚くなるほど蒸着時に蒸発セル周辺にたまってしまう蒸着又は溶融した成膜材料が増大するので、蒸発源テーブルの保守を頻繁に行うことにより、蒸着処理を常に高い純度で行うことが可能である。   In addition, if the evaporating source table is further provided with an entry / exit means for taking the evaporating source table out and in, the replenishment of the film forming material and the maintainability of the evaporating source are improved. The more materials used, and the thicker the film to be deposited, the more deposited or melted film material that accumulates around the evaporation cell during deposition. Can always be performed with high purity.

また、上記ガイドに沿って蒸発源テーブルを蒸着槽から出し入れすることができる場合には、新たに出し入れ手段を設ける必要はなく、装置が簡易な構成になってその使用が容易になる。   Further, when the evaporation source table can be taken in and out of the vapor deposition tank along the guide, it is not necessary to provide a new means for taking in and out, and the apparatus becomes simple and easy to use.

以下、図面を参照して本発明による真空蒸着装置の第1の実施の形態について説明する。図1は本発明による第1の実施の形態の真空蒸着装置の平面図、図2は図1に示す真空蒸着装置の概略構成を示す正面図である。   Hereinafter, a first embodiment of a vacuum evaporation apparatus according to the present invention will be described with reference to the drawings. FIG. 1 is a plan view of a vacuum vapor deposition apparatus according to a first embodiment of the present invention, and FIG. 2 is a front view showing a schematic configuration of the vacuum vapor deposition apparatus shown in FIG.

本実施形態は、真空状態の蒸着槽11内において複数の蒸発セル14,14、、内の成膜材料15を加熱蒸発させて蒸着エリア12に配した基板12aに蒸着させる真空蒸着装置10において、蒸着エリア12の四隅近傍に対向する4か所Paにそれぞれ配置された第1の蒸発セル14aと、各第1の蒸発セル14aの位置を含む平行な直線上に互いに同等の間隔で並べられた第2の蒸発セル14bおよび14cとを、蒸着エリア12に対向する同一面内に配置された蒸発源テーブル上に設けたものである。   In the vacuum deposition apparatus 10 according to the present embodiment, a plurality of evaporation cells 14, 14 in a vacuum deposition tank 11, and the film forming material 15 therein are evaporated by heating and deposited on a substrate 12 a disposed in a deposition area 12. The first evaporation cells 14a arranged at four locations Pa facing the vicinity of the four corners of the vapor deposition area 12 and the parallel lines including the positions of the first evaporation cells 14a are arranged at equal intervals. The second evaporation cells 14 b and 14 c are provided on an evaporation source table disposed in the same plane facing the vapor deposition area 12.

蒸着エリア12に対向する同一面内に配置された蒸発源テーブル13における上記蒸発源の配置位置Paは、蒸着エリア12に対して最も均一な蒸着膜が得られるよう数値計算等の方法により求めた配置位置であり、蒸着エリア12の大きさ、形、蒸着源から蒸着エリアまでの距離等の条件によって蒸発源の最適な配置位置の数と位置は異なるが、本実施形態の正方形に近い矩形の蒸着エリア12に対して数値計算により求められた蒸発源の配置位置Paは、図1に示すように、蒸着エリア12の四隅近傍の4か所である。   The arrangement position Pa of the evaporation source in the evaporation source table 13 arranged in the same plane facing the vapor deposition area 12 was obtained by a method such as numerical calculation so that the most uniform vapor deposition film was obtained with respect to the vapor deposition area 12. Although it is an arrangement position, the number and position of the optimum arrangement positions of the evaporation source differ depending on conditions such as the size and shape of the vapor deposition area 12 and the distance from the vapor deposition source to the vapor deposition area. As shown in FIG. 1, there are four locations Pa near the four corners of the vapor deposition area 12, as shown in FIG. 1.

また、上記蒸発源テーブル13の下部には一対のガイドレール19、19を設け、そのガイドレール19、19に沿って蒸発源テーブル13を往復移動し得るように移動手段が設けられている。図3は、その例として、図1のA方向から見た蒸発源テーブル13の移動手段を示す側面図である。この移動手段は、蒸発源テーブル13の下部において、上記各ガイドレール19付近の2か所ずつ計4か所に連結部17を設け、各連結部17の両側面に、ガイドレール19に沿って転動する2対の車輪18、18を取り付けたものであり、ガイドレール19、19に沿って蒸発源テーブル13を往復移動し得るようにしている。   A pair of guide rails 19, 19 are provided below the evaporation source table 13, and moving means is provided so that the evaporation source table 13 can reciprocate along the guide rails 19, 19. FIG. 3 is a side view showing the moving means of the evaporation source table 13 as seen from the direction A of FIG. 1 as an example. This moving means is provided with connecting portions 17 at a total of four locations near the respective guide rails 19 in the lower part of the evaporation source table 13 and along the guide rails 19 on both side surfaces of each connecting portion 17. Two pairs of rolling wheels 18 and 18 are attached, and the evaporation source table 13 can be reciprocated along the guide rails 19 and 19.

上記の構成により、蒸着の際には、静止又は同一面内で回転する基板12aに対して、上記蒸発源テーブル13を図外の駆動手段によりガイドレールに沿って移動させ、蒸発源テーブル13上に配置された12個の蒸発セル14のうち第1の蒸発源として用いられる4個の第1の蒸発セル14aを配置位置Paへ移動し、停止させて第1の蒸着材料の蒸着を行う。次いで、蒸発源テーブル13をA方向に、第1の蒸発セル14aに隣接する第2の蒸発セル14bが配置位置Paに来るまで移動し、停止させて第2の蒸着材料の蒸着を行う。このようにして、蒸発源テーブル13をA方向に順次移動することにより、蒸着槽11の真空状態を保持したまま、所望の蒸着処理に応じて、蒸発源テーブル13に配置された複数の蒸発セル14内の1種類以上の成膜材料全てについて連続成膜処理をすることが可能である。蒸発源テーブル13上に12個の蒸発セル14が配置されたこの実施形態では、蒸発セル14を一度に4個ずつ使うので、最大3種類の成膜材料15を用いて成膜することができる。   With the above configuration, during vapor deposition, the evaporation source table 13 is moved along the guide rail by a driving means (not shown) with respect to the substrate 12a that is stationary or rotates in the same plane, and the evaporation source table 13 The four first evaporation cells 14a used as the first evaporation source among the twelve evaporation cells 14 arranged in (1) are moved to the arrangement position Pa, stopped, and the first evaporation material is deposited. Next, the evaporation source table 13 is moved in the A direction until the second evaporation cell 14b adjacent to the first evaporation cell 14a reaches the arrangement position Pa, and is stopped to deposit the second evaporation material. In this manner, by sequentially moving the evaporation source table 13 in the A direction, a plurality of evaporation cells arranged on the evaporation source table 13 according to a desired vapor deposition process while maintaining the vacuum state of the vapor deposition tank 11. It is possible to perform a continuous film forming process on all of one or more kinds of film forming materials in the film 14. In this embodiment in which twelve evaporation cells 14 are arranged on the evaporation source table 13, four evaporation cells 14 are used at a time, so that a film can be formed using a maximum of three types of film forming materials 15. .

また、上記移動手段により、図1および図2に2点鎖線で示すように、蒸発源テーブル13をガイドレール19に沿って蒸着槽11から出し入れすることも可能であり、蒸発源または蒸発源テーブルの保守を容易にすることができる。   Further, as shown by the two-dot chain line in FIGS. 1 and 2, the evaporation means table 13 can be taken in and out of the evaporation tank 11 along the guide rail 19 by the moving means. Maintenance can be facilitated.

なお、上記第1の実施形態で対象とした蒸着エリア12は図示のように正方形に近い矩形であるが、これは正方形でもよい。特に正方形の場合には、蒸着エリア12の4隅すなわち頂点付近の対等な位置に4つの蒸発セル14を配置することにより、良好に均一な膜厚で成膜することができる。   In addition, although the vapor deposition area 12 made into object in the said 1st Embodiment is a rectangle close | similar to a square like illustration, this may be a square. In particular, in the case of a square shape, it is possible to form a film with a favorable uniform film thickness by disposing the four evaporation cells 14 at equal positions near the four corners, that is, the apexes of the vapor deposition area 12.

次に、本発明による真空蒸着装置の第2の実施の形態について図4を参照して説明する。図4は本発明による第2の実施の形態の真空蒸着装置の平面図である。   Next, a second embodiment of the vacuum evaporation apparatus according to the present invention will be described with reference to FIG. FIG. 4 is a plan view of a vacuum deposition apparatus according to the second embodiment of the present invention.

本実施形態は、真空状態の蒸着槽21内において複数の蒸発セル24,24、、内の成膜材料25を加熱蒸発させて蒸着エリア22に配した基板22aに蒸着させる真空蒸着装置20において、蒸着エリア22の四隅近傍に対向する4か所Pbにそれぞれ配置された第1の蒸発セル24aと、各第1の蒸発セル24aの位置を含む平行な直線上に互いに同等の間隔で並べられた第2の蒸発セル24b、24c、24d、および24eとを、蒸着エリア12に対向する同一面内に配置された蒸発源テーブル23上に設けたものである。   In this embodiment, a plurality of evaporation cells 24, 24 in a vacuum deposition tank 21, and a film deposition material 25 in the vacuum evaporation apparatus 20 are heated and evaporated to deposit on a substrate 22 a disposed in a deposition area 22. The first evaporation cells 24a respectively disposed at four positions Pb facing the vicinity of the four corners of the vapor deposition area 22 and the parallel lines including the positions of the first evaporation cells 24a are arranged at equal intervals. The second evaporation cells 24 b, 24 c, 24 d, and 24 e are provided on the evaporation source table 23 disposed on the same plane facing the vapor deposition area 12.

蒸着エリア22に対向する同一面内に配置された蒸発源テーブル23における上記蒸発源の配置位置Pbは、蒸着エリア22に対して複数個の蒸発源を同時に用いて最も均一な蒸着膜が得られる蒸発源の配置位置であって、この実施形態では、上記各蒸発源の配置位置Pbを含む平行な4本の直線が互いに重ならないように設定されていることから、他の直線上の蒸発セルと同一直線上に並ぶことがないので、その直線上の空間には、4か所蒸発源の配置位置Pbのうち1か所で使用される蒸発セルだけを並べることができる。   The evaporation source arrangement position Pb in the evaporation source table 23 arranged in the same plane facing the vapor deposition area 22 is obtained by using a plurality of evaporation sources simultaneously with respect to the vapor deposition area 22 to obtain the most uniform vapor deposition film. In this embodiment, since the four parallel straight lines including the respective evaporation source placement positions Pb are set so as not to overlap each other, the evaporation cells on the other straight lines are arranged. Therefore, only the evaporation cells used at one of the four positions Vb of the evaporation source can be arranged in the space on the straight line.

また、上記蒸発源テーブル23の下部には一対のガイドレール29、29を設け、そのガイドレール29、29に沿って蒸発源テーブル23を往復移動し得るように移動手段が設けられているものである。   Further, a pair of guide rails 29 and 29 are provided below the evaporation source table 23, and moving means is provided so that the evaporation source table 23 can reciprocate along the guide rails 29 and 29. is there.

上記の構成により、蒸着の際には、静止又は同一面内で回転する基板22に対して、上記蒸発源テーブル23を図外の駆動手段によりガイドレール29、29に沿って移動させ、蒸発源テーブル23上に配置された20個の蒸発セル24のうち蒸発源として用いられる蒸発セルを4個ずつ配置位置Paへ順次移動させることが可能であり、蒸着槽21の真空状態を保持したまま、所望の蒸着処理に応じて、蒸発源テーブル23に配置された複数の蒸発セル24内の1種類以上の成膜材料全てについて連続成膜処理をすることが可能である。蒸発源テーブル23上に12個の蒸発セル24が配置されたこの実施形態では、蒸発セル24を一度に4個ずつ使うので、最大5種類の成膜材料25を用いて成膜することができる。   With the above-described configuration, during evaporation, the evaporation source table 23 is moved along the guide rails 29 and 29 by driving means (not shown) with respect to the substrate 22 that is stationary or rotates in the same plane, and the evaporation source Of the 20 evaporation cells 24 arranged on the table 23, four evaporation cells used as evaporation sources can be sequentially moved to the arrangement position Pa, and the vacuum state of the vapor deposition tank 21 is maintained. Depending on the desired vapor deposition process, it is possible to perform a continuous film deposition process on all of one or more film deposition materials in the plurality of evaporation cells 24 arranged on the evaporation source table 23. In this embodiment in which twelve evaporation cells 24 are arranged on the evaporation source table 23, four evaporation cells 24 are used at a time, so that film formation can be performed using a maximum of five kinds of film forming materials 25. .

また、上記移動手段により、図4に2点鎖線で示すように、蒸発源テーブル23をガイドレール29に沿って蒸着槽21から出し入れすることも可能であり、蒸発源または蒸発源テーブルの保守を容易にすることができる。   In addition, as shown by a two-dot chain line in FIG. 4, the evaporation means table 23 can be taken in and out of the evaporation tank 21 along the guide rail 29 by the moving means, and the evaporation source or the evaporation source table can be maintained. Can be easily.

次に、本発明による真空蒸着装置の第3の実施の形態について図5を参照して説明する。図5は本発明による第3の実施の形態の真空蒸着装置の平面図である。   Next, a third embodiment of the vacuum evaporation apparatus according to the present invention will be described with reference to FIG. FIG. 5 is a plan view of a vacuum vapor deposition apparatus according to a third embodiment of the present invention.

本実施形態は、真空状態の蒸着槽31内において複数の蒸発セル34,34、、内の成膜材料35を加熱蒸発させて長方形の蒸着エリア32に配した基板32aに蒸着させる真空蒸着装置30において、蒸着エリア32の両端近傍に対向する2か所Pcにそれぞれ配置された第1の蒸発セル34aと、各第1の蒸発セル34aの位置を含む平行な直線上に互いに同等の間隔で並べられた第2の蒸発セル34bおよび34cとを、基板32に対向する同一面内に配置された蒸発源テーブル上に設けたものである。   In the present embodiment, a plurality of evaporation cells 34, 34, and the film forming material 35 in the evaporation tank 31 in a vacuum state are heated and evaporated to be deposited on a substrate 32 a disposed in a rectangular deposition area 32. , The first evaporation cells 34a respectively disposed at the two positions Pc facing the vicinity of both ends of the vapor deposition area 32 and the parallel lines including the positions of the first evaporation cells 34a are arranged at equal intervals. The second evaporation cells 34 b and 34 c thus obtained are provided on an evaporation source table disposed on the same plane facing the substrate 32.

蒸着エリア32に対向する同一面内に配置された蒸発源テーブル33における上記蒸発源の配置位置Pcは、蒸着エリア32に対して最も均一な蒸着膜が得られるよう数値計算等の方法により求めた配置位置であり、本実施形態の比較的細長い長方形の蒸着エリア32に対して数値計算により求められた蒸発源の配置位置Pcは、図5に示すように、蒸着エリア12の四隅近傍の2か所である。   The arrangement position Pc of the evaporation source in the evaporation source table 33 arranged in the same plane facing the vapor deposition area 32 is obtained by a method such as numerical calculation so that the most uniform vapor deposition film can be obtained with respect to the vapor deposition area 32. As shown in FIG. 5, the evaporation source arrangement position Pc, which is the arrangement position and is obtained by numerical calculation for the relatively elongated rectangular vapor deposition area 32 of the present embodiment, is two. It is a place.

また、上記蒸発源テーブル33の下部には一対のガイドレール39、39を設け、そのガイドレール39、39に沿って蒸発源テーブル33を往復移動し得るように移動手段が設けられているものである。   Further, a pair of guide rails 39, 39 are provided below the evaporation source table 33, and moving means is provided so that the evaporation source table 33 can reciprocate along the guide rails 39, 39. is there.

上記の構成により、蒸着の際には、静止又は同一面内で回転する基板32に対して、上記蒸発源テーブル33を図外の駆動手段によりガイドレールに沿って移動させ、蒸発源テーブル33上に配置された6個の蒸発セル34のうち蒸発源として用いられる蒸発セルを2個ずつ配置位置Pcへ順次移動させることが可能であり、蒸着槽31の真空状態を保持したまま、所望の蒸着処理に応じて、蒸発源テーブル33に配置された複数の蒸発セル34内の1種類以上の成膜材料全てについて連続成膜処理をすることが可能である。蒸発源テーブル33上に6個の蒸発セル34が配置されたこの実施形態では、蒸発セル34を一度に2個ずつ使うので、最大3種類の成膜材料35を用いて成膜することができる。   With the above configuration, during vapor deposition, the evaporation source table 33 is moved along the guide rail by a driving means (not shown) with respect to the substrate 32 that is stationary or rotates in the same plane, and the evaporation source table 33 is It is possible to sequentially move two evaporation cells used as the evaporation source among the six evaporation cells 34 arranged at the position to the arrangement position Pc, and the desired vapor deposition while maintaining the vacuum state of the vapor deposition tank 31. Depending on the process, it is possible to perform a continuous film formation process on all of one or more film formation materials in the plurality of evaporation cells 34 arranged on the evaporation source table 33. In this embodiment in which six evaporation cells 34 are arranged on the evaporation source table 33, two evaporation cells 34 are used at a time, so that film formation can be performed using a maximum of three kinds of film formation materials 35. .

また、上記移動手段により、図5に2点鎖線で示すように、蒸発源テーブル33をガイドレール39に沿って蒸着槽31から出し入れすることも可能であり、蒸発源または蒸発源テーブルの保守を容易にすることができる。   Further, as shown by a two-dot chain line in FIG. 5, it is possible to move the evaporation source table 33 in and out of the vapor deposition tank 31 along the guide rail 39 by the moving means, and the evaporation source or the evaporation source table can be maintained. Can be easily.

なお、上記各実施形態において、蒸発源テーブル上の複数の蒸発セルを連続して使用する多層の蒸着処理を行う場合、蒸着処理に用いる蒸発源テーブル13,23、33上に配置された蒸発セル14,24,34の数、大きさの組み合わせおよび蒸着に使用する順番に特に制限はない。   In each of the above embodiments, when performing a multi-layer deposition process in which a plurality of evaporation cells on the evaporation source table are continuously used, the evaporation cells arranged on the evaporation source tables 13, 23, 33 used for the deposition process. There is no restriction | limiting in particular in the order used for the number of 14,24,34, the combination of a magnitude | size, and vapor deposition.

また、各蒸着エリア12,22,32に配した基板12a、22a、32aは蒸着エリア12,22,32と一致するように設けられているが、これは均一な蒸着膜が得られる各々の蒸着エリア12,22,32の同一面内に収まる大きさであれば、例えば円形等どんな形であってもよい。   Moreover, although the board | substrates 12a, 22a, 32a distribute | arranged to each vapor deposition area 12, 22, 32 are provided so that it may correspond with vapor deposition area 12, 22, 32, this is each vapor deposition from which a uniform vapor deposition film is obtained. Any shape such as a circle may be used as long as it fits within the same plane of the areas 12, 22, and 32.

本発明による第1の実施の形態の真空蒸着装置の平面図The top view of the vacuum evaporation system of 1st Embodiment by this invention 図1に示す真空蒸着装置の概略構成を示す正面図The front view which shows schematic structure of the vacuum evaporation system shown in FIG. 図1のA方向から見た蒸発源テーブルの移動手段を示す側面図The side view which shows the moving means of the evaporation source table seen from A direction of FIG. 本発明による第2の実施の形態の真空蒸着装置の平面図The top view of the vacuum evaporation system of 2nd Embodiment by this invention 本発明による第3の実施の形態の真空蒸着装置の平面図The top view of the vacuum evaporation system of 3rd Embodiment by this invention

符号の説明Explanation of symbols

10、20、30 真空蒸着装置
11、21、31 蒸着槽
12、22、32 蒸着エリア
12a、22a、32a 基板
13、23、33 蒸発源テーブル
14、24、34 蒸発セル
15、25、35 成膜材料
19、29、39 ガイドレール(ガイド)
Pa,Pb,Pc 蒸発源配置位置
10, 20, 30 Vacuum deposition apparatus 11, 21, 31 Deposition tank 12, 22, 32 Deposition area 12a, 22a, 32a Substrate 13, 23, 33 Evaporation source table 14, 24, 34 Evaporation cell 15, 25, 35 Film formation Material 19, 29, 39 Guide rail (guide)
Pa, Pb, Pc Evaporation source location

Claims (3)

真空状態の蒸着槽内において蒸発セル内の成膜材料を加熱蒸発させて蒸着エリアに配した基板に蒸着させる真空蒸着装置であって、
前記蒸着エリアに対向する同一面内の、前記蒸着エリアの四隅周辺に対向する位置にそれぞれ配置された4個の第1の蒸発セルと、該各第1の蒸発セルの位置を含む平行な4本の直線上に互いに同等の間隔で並べられた一個以上の第2の蒸発セルとが配置された蒸発源テーブルと、
前記直線方向に、前記蒸発源テーブルを移動し得るように設置されたガイドと
を備えたことを特徴とする真空蒸着装置。
A vacuum deposition apparatus for evaporating a film forming material in an evaporation cell in a vacuum deposition tank by heating and evaporating it on a substrate disposed in a deposition area,
Four first evaporation cells arranged at positions facing the periphery of the four corners of the vapor deposition area in the same plane facing the vapor deposition area, and four parallel cells including the positions of the first vaporization cells. An evaporation source table in which one or more second evaporation cells arranged at equal intervals on a straight line are arranged;
A vacuum deposition apparatus comprising: a guide installed so as to move the evaporation source table in the linear direction.
前記蒸発源テーブルを真空槽から出し入れする出入手段をさらに備えたことを特徴とする請求項1記載の真空蒸着装置。   2. The vacuum vapor deposition apparatus according to claim 1, further comprising an entry / exit means for taking in and out the evaporation source table from a vacuum chamber. 前記出入手段が、前記ガイドに沿って前記蒸発源テーブルを前記蒸着槽から出し入れするものであることを特徴とする請求項1または2記載の真空蒸着装置。   The vacuum deposition apparatus according to claim 1 or 2, wherein the access means is configured to take in and out the evaporation source table from the deposition tank along the guide.
JP2006066077A 2006-03-10 2006-03-10 Vacuum vapor deposition apparatus Withdrawn JP2007239071A (en)

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JP2009203534A (en) * 2008-02-28 2009-09-10 Fujifilm Corp Vacuum deposition apparatus
WO2010128811A2 (en) * 2009-05-07 2010-11-11 에스엔유 프리시젼 주식회사 Thin film deposition apparatus and thin film deposition system comprising same
WO2010114274A3 (en) * 2009-03-31 2010-12-23 Snu Precision Co., Ltd Apparatus for depositing film and method for depositing film and system for depositing film
WO2011155652A1 (en) * 2010-06-10 2011-12-15 에스엔유 프리시젼 주식회사 Thin film deposition device and thin film deposition system

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009203534A (en) * 2008-02-28 2009-09-10 Fujifilm Corp Vacuum deposition apparatus
WO2010114274A3 (en) * 2009-03-31 2010-12-23 Snu Precision Co., Ltd Apparatus for depositing film and method for depositing film and system for depositing film
KR101097737B1 (en) * 2009-03-31 2011-12-22 에스엔유 프리시젼 주식회사 Apparatus for depositing film and method for depositing film and system for depositing film
TWI427178B (en) * 2009-03-31 2014-02-21 Snu Precision Co Ltd Apparatus for depositing film and method for depositing film and system for depositing film
WO2010128811A2 (en) * 2009-05-07 2010-11-11 에스엔유 프리시젼 주식회사 Thin film deposition apparatus and thin film deposition system comprising same
WO2010128811A3 (en) * 2009-05-07 2011-03-17 에스엔유 프리시젼 주식회사 Thin film deposition apparatus and thin film deposition system comprising same
KR101119853B1 (en) 2009-05-07 2012-02-28 에스엔유 프리시젼 주식회사 Apparatus for depositing film and system for depositing film having the same
CN102421933A (en) * 2009-05-07 2012-04-18 韩商Snu精密股份有限公司 Thin film deposition apparatus and thin film deposition system comprising same
WO2011155652A1 (en) * 2010-06-10 2011-12-15 에스엔유 프리시젼 주식회사 Thin film deposition device and thin film deposition system

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