JP2004146369A - Manufacturing method of manufacturing device and light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vapor deposition device as one film forming device of which the utilization efficiency of an EL material is high and the uniformity and a throughput property of a film formation of an EL layer are excellent, and to provide a vapor deposition method. <P>SOLUTION: A lengthy rectangular evaporation source holder 17 having a plurality of containers in which a vapor deposition material is enclosed is arranged in a vapor deposition chamber, and vapor deposition is carried out while moving the evaporation source holder to a substrate 13 at a certain pitch. The holder 17 may be moved in a state that the length direction of the holder 17 remains oblique relative one side of the substrate 13. It is preferable that the moving direction of the holder 17 during the vapor deposition is different from the scanning direction of laser light during the manufacturing of a TFT (thin film transistor). <P>COPYRIGHT: (C)2004,JPO

Description

The present invention relates to a manufacturing apparatus provided with a film forming apparatus used for forming a material capable of forming a film by vapor deposition (hereinafter, referred to as an evaporation material), and a light emitting device using the manufacturing apparatus and having a layer containing an organic compound as a light emitting layer. And a method for manufacturing the same. In particular, the present invention relates to a film formation method (evaporation method) for forming a film by evaporating an evaporation material from a plurality of evaporation sources provided to face a substrate, and a manufacturing apparatus.

In recent years, research on light-emitting devices having EL elements as self-luminous light-emitting elements has been active. This light emitting device is also called an organic EL display or an organic light emitting diode. These light-emitting devices have characteristics such as fast response speed, low voltage, and low power consumption driving suitable for displaying moving images. Therefore, next-generation displays such as a new generation of mobile phones and personal digital assistants (PDAs) are available. As a big attention.

An EL element including a layer containing an organic compound as a light-emitting layer has a structure in which a layer containing an organic compound (hereinafter, referred to as an EL layer) is sandwiched between an anode and a cathode, and an electric field is applied between the anode and the cathode. , The EL layer emits luminescence (Electro Luminescence). Light emission from the EL element includes light emission (fluorescence) when returning from the singlet excited state to the ground state and light emission (phosphorescence) when returning from the triplet excited state to the ground state.

The EL layer has a laminated structure represented by “hole transport layer / light emitting layer / electron transport layer”. In addition, EL materials forming an EL layer are roughly classified into a low molecular (monomer) material and a high molecular (polymer) material, and the low molecular material is formed into a film using an evaporation apparatus.

A conventional vapor deposition apparatus has a substrate placed in a substrate holder, and has a crucible in which an EL material, that is, a vapor deposition material is sealed, a shutter for preventing the EL material to be sublimated from rising, and a heater for heating the EL material in the crucible. ing. Then, the EL material heated by the heater sublimates and is deposited on the rotating substrate. At this time, the distance between the substrate and the crucible needs to be 1 m or more in order to form a uniform film.

In a conventional vapor deposition apparatus and a conventional vapor deposition method, when an EL layer is formed by vapor deposition, most of the sublimated EL material is formed on an inner wall of a deposition chamber of the vapor deposition apparatus, a shutter or an anti-adhesion shield (the deposition material adheres to the inner wall of the deposition chamber) Protection plate to prevent damage. Therefore, at the time of forming the EL layer, the utilization efficiency of the expensive EL material is extremely low at about 1% or less, and the manufacturing cost of the light emitting device is extremely high.

(4) In the conventional vapor deposition apparatus, it is necessary to keep the distance between the substrate and the vapor deposition source at least 1 m in order to obtain a uniform film. For this reason, the vapor deposition apparatus itself becomes large, and the time required for exhausting each of the film forming chambers of the vapor deposition apparatus becomes long, so that the film deposition rate is reduced, and the throughput is reduced. Further, in the case of a large-area substrate, there is a problem that the film thickness tends to be non-uniform at the central portion and the peripheral portion of the substrate. Furthermore, since the evaporation apparatus has a structure in which the substrate is rotated, there is a limit to the evaporation apparatus intended for a large-area substrate.

か ら From these points, the present applicant has proposed vapor deposition apparatuses (Patent Documents 1 and 2).

JP 2001-247959 A JP-A-2002-60926

The present invention provides a vapor deposition apparatus and a vapor deposition method that are one of the production apparatuses that reduce the production cost by increasing the use efficiency of the EL material, and that are excellent in uniformity of EL layer film formation and throughput. is there. Another object of the present invention is to provide a light emitting device manufactured by the evaporation apparatus and the evaporation method of the present invention and a method for manufacturing the light emitting device.

In addition, the present invention relates to a substrate having a large area such as a substrate having a size of 320 mm × 400 mm, 370 mm × 470 mm, 550 mm × 650 mm, 600 mm × 720 mm, 680 mm × 880 mm, 1000 mm × 1200 mm, 1100 mm × 1250 mm, 1150 mm × 1300 mm. And a manufacturing apparatus for efficiently depositing an EL material. Another object of the present invention is to provide a vapor deposition apparatus capable of obtaining a uniform film thickness over the entire surface of a large-area substrate.

In order to achieve the above object, the present invention provides a vapor deposition apparatus characterized in that a substrate and a vapor deposition source move relatively. That is, the present invention is characterized in that an evaporation source holder in which a container in which an evaporation material is sealed moves at a certain pitch with respect to a substrate in an evaporation chamber. In this specification, a manufacturing apparatus having a vapor deposition apparatus provided with a moving vapor deposition holder is referred to as a moving cell cluster system.

In the present invention, the top surface of one evaporation holder is rectangular, and four or more, preferably six or eight, crucibles can be arranged side by side in the longitudinal direction. Note that the rectangular shape includes an elongated rectangle, an elongated ellipse, and a line shape. The length of the deposition holder in the longitudinal direction may be appropriately designed in the range of 300 mm to 1300 mm according to the size of the substrate to be used, and crucibles may be arranged at equal intervals. If the length of the evaporation holder in the longitudinal direction is shorter than one side of the substrate, the film may be formed by repeating scanning several times. Further, the same thin film may be laminated several times by repeatedly moving the deposition holder along the same path.

Furthermore, four or more containers having their deposition centers crossed may be installed, heated at the same time, and the deposition material may be bumped from a plurality of directions to form fine particles. In this case, the crossing point is located in the space between the mask (and the substrate) and the container.

The number of organic compounds provided in the evaporation source holder is not necessarily one or one, but may be plural.

(4) In addition to one kind of material provided as a light-emitting organic compound in the evaporation source holder, another organic compound (dopant material) which can be a dopant may be provided together. The organic compound layer to be deposited is composed of a host material and a light emitting material (dopant material) having lower excitation energy than the host material, and the excitation energy of the dopant is the excitation energy of the hole transport region and the excitation of the electron transport layer. It is preferable to design so as to be lower than the energy. Thus, diffusion of molecular excitons of the dopant can be prevented, and the dopant can emit light effectively. If the dopant is a carrier trap type material, the recombination efficiency of carriers can be increased. The present invention also includes a case where a material capable of converting triplet excitation energy into light emission is added to the mixed region as a dopant.

Further, a region in which a vapor deposition material is mixed (mixed region) can be formed at an interface with each film in an EL layer having a stacked structure by filling different materials into a plurality of crucibles and performing vapor deposition at the same time. it can. In forming the mixed region, the mixed region may have a concentration gradient.

Further, when a plurality of types of organic compounds are provided in one evaporation source holder, it is desirable that the direction in which the organic compounds evaporate so as to be mixed with each other is oblique so as to intersect at the position of the deposition target. The direction of vapor deposition may be appropriately set by tilting the container (crucible) with the tilt adjusting screw.

(4) The evaporation source holder is provided with a mechanism (typically, a biaxial stage) that can move in the X direction or the Y direction in the film forming chamber while keeping the horizontal position. Here, the deposition source holder is moved in the X direction or the Y direction on a two-dimensional plane. Further, the moving pitch of the evaporation source holder may be appropriately adjusted to the opening size of the mask. Also, the film thickness monitor moves integrally with the deposition holder. The moving speed of the evaporation source holder is also adjusted according to the value measured by the film thickness monitor to make the film thickness uniform. Note that the longitudinal direction of the deposition holder and the moving direction of the deposition holder form 90 °.

Further, in the vapor deposition apparatus of the present invention, at the time of vapor deposition, the distance d between the substrate and the vapor deposition source holder is typically reduced to 30 cm or less, preferably 20 cm or less, more preferably 5 cm to 15 cm, and Efficiency and throughput are significantly improved.

In addition, as shown in FIG. 4A, the distance d between the substrate and the deposition source holder is typically reduced to 30 cm or less, so that the deposition mask may be heated. Therefore, the evaporation mask is made of a metal material having a low coefficient of thermal expansion that is not easily deformed by heat (for example, a high melting point metal such as tungsten, tantalum, chromium, nickel, or molybdenum, or an alloy containing these elements, a material such as stainless steel, Inconel, or Hastelloy). It is desirable to use For example, a low thermal expansion alloy of 42% nickel and 58% iron may be used. Further, a mechanism for circulating a cooling medium (cooling water, cooling gas) through the evaporation mask may be provided to cool the heated evaporation mask. In the present invention, since the evaporation source holder moves, if the moving speed is high, the evaporation mask is hardly heated, and a film formation defect or the like caused by deformation of the mask due to heat can be suppressed.

In addition, when a large-area substrate is used and a plurality of panels are formed (a plurality of panels are formed from one substrate), substrate holding means for supporting the substrate is provided so that a portion serving as a scribe line is in contact with the substrate. That is, the mask and the substrate are placed on the substrate holding means, and the evaporation material is sublimated from an evaporation source holder provided below the substrate holding means, and the area not in contact with the substrate holding means and covered with the mask. Vapor deposition is performed in an area where there is not. By doing so, the deflection of the mask due to its own weight and the deflection of the large area substrate can be suppressed to 1 mm or less. Further, when cleaning the mask and the inner wall of the chamber, the substrate holding means is formed of a conductive material, and plasma is generated by a high-frequency power supply connected to the substrate holding means to remove the deposition material adhered to the mask and the inner wall of the chamber. do it.

In addition, in order to clean the deposits attached to the mask, plasma is generated in the film formation chamber by plasma generation means as shown in FIG. It is preferable to evacuate. Therefore, the film forming chamber is provided with a gas introducing means for introducing one or a plurality of gases selected from Ar, H, F, NF ₃ or O, and a means for exhausting the vaporized deposit. Further, an electrode is separately provided on the mask, and a high-frequency power source is connected to one of the electrodes. As described above, the mask is preferably formed using a conductive material. Further, with the above configuration, it is possible to clean the film formation chamber without touching the atmosphere during maintenance. In addition, it is preferable that the film forming chamber is provided with both a means for simply plasma-cleaning only the mask and a means for strongly plasma-cleaning the entire chamber.

In the above-described vapor deposition apparatus, an example of the vapor deposition source holder is shown in FIG. 9, and a container (typically a crucible) 801, a heater disposed outside the container via a heat equalizing member, A heat insulating layer provided on the outside of the heater, an outer cylinder (outer frame 802) containing these, a cooling pipe (pipe for flowing cooling water 810) swirled outside (or inside) of the outer cylinder, and a crucible. It consists of a vapor deposition shutter that opens and closes the opening of the outer cylinder including the opening, and a film thickness sensor. Further, silicone resin 803 may be filled so that no gap is left between the container 801 and the outer frame 802. In addition, by providing a filter inside the container 801, sublimated material having a size equal to or larger than a certain value (the size of the filter) cannot pass through the filter 305 provided in the container, and enters the container. Return and sublimate again. By using a container having such a filter, a vapor deposition material having a uniform size is vapor-deposited, so that a film formation rate can be controlled and a uniform film thickness can be obtained, and uniform and uniform vapor deposition can be performed. it can. Of course, if uniform and uniform deposition is possible, it is not necessary to provide a filter. The shape of the container is not limited to FIG. The container is made of a material such as a heat-resistant metal (such as Ti), a sintered body of BN, a composite sintered body of BN and AlN, quartz, or graphite, and can withstand high temperature, high pressure, and reduced pressure. It has become.

In addition, one deposition chamber may be provided with a plurality of evaporation source holders, and the structure of the invention disclosed in this specification is as follows.
A manufacturing apparatus having a load chamber, a transfer chamber connected to the load chamber, and a plurality of film formation chambers connected to the transfer chamber, and an installation chamber connected to the film formation chamber,
The plurality of film forming chambers are connected to a first evacuation processing chamber that evacuates the film forming chamber, and an alignment unit that positions a mask and a substrate, a substrate holding unit, and a plurality of rectangular vapor deposition units. Source holder, and means for moving the deposition source holder, respectively,
A container in which a deposition material disposed in the longitudinal direction is sealed in the deposition source holder, and a unit for heating the container,
The installation chamber is connected to a second evacuation processing chamber that evacuates the installation chamber, and the installation chamber heats a container, and transfers the container to the evaporation source holder in the film formation chamber. And a manufacturing device.

(4) In the above structure, the substrate holding means overlaps with a region serving as a terminal portion, a cutting region, or an end portion of the substrate with the mask interposed therebetween.

In the above structure, the substrate holding means and the mask are bonded or welded.

In the above configuration, the means for moving the evaporation source holder has a mechanism for moving the evaporation source holder in the X-axis direction at a certain pitch and moving the evaporation source holder in the Y-axis direction at a certain pitch. And manufacturing equipment.

Further, in the above configuration, a plurality of containers are arranged at equal intervals in the rectangular evaporation source holder.

容器 Also, instead of arranging a plurality of containers, the containers themselves may have an elongated shape in accordance with the rectangular shape of the evaporation holder.

FIG. 1 shows an example (1 × 7) arranged in one line, but for example, a plurality of crucibles may be arranged in two lines. The timing at which the plurality of evaporation source holders starts moving may be after the previous evaporation source holder has stopped or before the stop. For example, an organic material having a hole transporting property is set in the deposition holder A, an organic material to be a light emitting layer is set in the deposition holder B, an organic material having an electron transporting property is set in the deposition holder C, and the deposition holder D is set in the deposition holder D. If a material to be a cathode buffer is set, these material layers can be continuously laminated in the same chamber, and the productivity can be improved. In the case where the movement of the next deposition source holder is started before the deposited film is solidified, a region (mixed region) in which the deposition material is mixed at the interface with each film in the EL layer having a laminated structure. Can be formed.

相 対 的 に In addition, since the substrate and the evaporation source holder move relatively, it is possible to reduce the size of the apparatus without having to provide a long distance between the substrate and the evaporation source holder. In addition, since the vapor deposition device is small, the sublimated vapor deposition material is less likely to adhere to the inner wall of the deposition chamber or the anti-adhesion shield, and the vapor deposition material can be used without waste. Further, in the vapor deposition method of the present invention, since it is not necessary to rotate the substrate, it is possible to provide a vapor deposition apparatus capable of supporting a large-area substrate. In addition, by moving the deposition source holder in the X-axis direction and the Y-axis direction with respect to the substrate, it is possible to form a deposited film uniformly. In addition, since the evaporation source holder moves, the evaporation mask is hardly heated, and a film formation defect or the like caused by deformation of the mask due to heat can be suppressed.

Further, as shown in FIG. 5, the rectangular deposition holder may be moved in the X direction or the Y direction while keeping the longitudinal direction oblique to the end surface of the substrate (that is, the X direction or the Y direction). The configuration of
A manufacturing apparatus having a load chamber, a transfer chamber connected to the load chamber, and a plurality of film formation chambers connected to the transfer chamber, and an installation chamber connected to the film formation chamber,
The plurality of film forming chambers are connected to a vacuum evacuation processing chamber that evacuates the film forming chamber, and aligns the mask and the substrate with each other, moves the rectangular evaporation source holder, and moves the evaporation source holder. Means to cause
The vapor deposition source holder has a container in which a vapor deposition material arranged in the longitudinal direction is sealed, and a unit for heating the container,
The manufacturing device is characterized in that the moving means moves a rectangular evaporation source holder whose longitudinal direction is oblique to one side of the substrate in the X direction or the Y direction of the substrate.

In the above configuration, the longitudinal direction of the evaporation holder and the moving direction of the evaporation holder form a certain angle Z (0 ° <Z <90 °).

Further, the substrate may be set obliquely to the longitudinal direction of the rectangular deposition holder, and the deposition holder may be moved in the X direction or the Y direction.
A manufacturing apparatus having a load chamber, a transfer chamber connected to the load chamber, and a plurality of film formation chambers connected to the transfer chamber, and an installation chamber connected to the film formation chamber,
The plurality of film forming chambers are connected to a vacuum evacuation processing chamber that evacuates the film forming chamber, and aligns the mask and the substrate with each other, moves the rectangular evaporation source holder, and moves the evaporation source holder. Means to cause
The vapor deposition source holder has a container in which a vapor deposition material arranged in the longitudinal direction is sealed, and a unit for heating the container,
A manufacturing apparatus, wherein one side of a substrate is installed obliquely to a direction in which the rectangular evaporation holder moves.

In the above configuration, not only the substrate but also the mask and the substrate holder are installed obliquely to the longitudinal direction of the evaporation holder. Note that the longitudinal direction of the deposition holder and the moving direction of the deposition holder form 90 °.

In the step of manufacturing an active matrix light-emitting device, it is preferable that a scanning direction of laser light used for manufacturing a TFT and a moving direction of a deposition holder are different from each other. Is
A material containing an organic compound is vapor-deposited from a vapor deposition source disposed opposite to a substrate provided with the TFT, and a film containing the organic compound is formed over a first electrode provided over the substrate; A method for manufacturing a light-emitting device in which a second electrode is formed over a film containing
Forming a semiconductor film over a substrate having an insulating surface;
Scanning and irradiating the semiconductor film with laser light,
Forming a TFT using the semiconductor film as an active layer;
Forming a first electrode connected to the TFT;
Forming a film containing an organic compound on the first electrode by moving a rectangular evaporation source holder in a direction different from the scanning direction of the laser light;
Forming a second electrode over the film containing the organic compound.

In addition, it is preferable that the direction perpendicular to the scanning direction of the laser beam and the moving direction of the evaporation holder be different from each other.
A material containing an organic compound is vapor-deposited from a vapor deposition source placed opposite to a substrate provided with the TFT and the first electrode, so that a film containing the organic compound is formed over the first electrode. A method for manufacturing a light-emitting device in which a second electrode is formed over a film including:
Forming a semiconductor film over a substrate having an insulating surface;
Scanning and irradiating the semiconductor film with laser light,
Forming a TFT using the semiconductor film as an active layer;
Forming a first electrode connected to the TFT;
Forming a film containing an organic compound on the first electrode by moving a rectangular deposition source holder in a direction different from a direction perpendicular to the scanning direction of the laser light,
Forming a second electrode over the film containing the organic compound.

In the above structure, the laser light is a kind selected from a continuous wave or pulsed YAG laser, a YVO ₄ laser, a YLF laser, a YAlO ₃ laser, a glass laser, a ruby laser, an Alexandrite laser, and Ti: sapphire laser. Or laser light from a plurality of types. Alternatively, the laser light is one or a plurality of laser lights selected from a continuous wave or pulsed excimer laser, an Ar laser, and a Kr laser.

In addition, when a main process in which impurities such as oxygen and water may be mixed with an EL material or a metal material to be deposited is given, a process of setting the EL material in a deposition chamber before the deposition, a deposition process, or the like. Can be considered.

容器 Also, the container for storing the EL material is usually put in a brown glass bottle and closed with a plastic lid (cap). It is also conceivable that the degree of sealing of the container for storing the EL material is insufficient.

2. Description of the Related Art Conventionally, when a film is formed by a vapor deposition method, a predetermined amount of an evaporating material placed in a container (glass bottle) is taken out, and a container (typically, a container disposed at a position opposed to a film-forming product in a vapor deposition apparatus) (A crucible or a vapor deposition boat), but there is a risk that impurities may be mixed in this transfer operation. That is, oxygen, water, and other impurities, which are one of the causes of deterioration of the EL element, may be mixed.

(4) When transferring from a glass bottle to a container, for example, it is conceivable that the transfer is manually performed by a human in a pretreatment chamber provided with gloves or the like in a vapor deposition apparatus. However, if a glove is provided in the pretreatment chamber, it cannot be evacuated and work must be performed at atmospheric pressure. Even if it is performed in a nitrogen atmosphere, it is difficult to reduce moisture and oxygen in the pretreatment chamber as much as possible. Met. It is possible to use a robot, but it is difficult to make a transfer robot because the evaporating material is in powder form. Therefore, it has been difficult to fully automate the steps from the step of forming the EL layer on the lower electrode to the step of forming the upper electrode, and to form a consistent closed system capable of avoiding impurity contamination.

Therefore, in the present invention, a conventional container, typically a brown glass bottle, is not used as a container for storing the EL material, and the EL material or the metal material is vacuum-sealed in a container to be installed in the vapor deposition apparatus. This is a manufacturing system in which the raw material is directly stored and vapor-deposited after transport, thereby preventing impurities from being mixed into a high-purity vapor-deposited material. Further, when the evaporation material of the EL material is directly stored, sublimation purification may be directly performed in a container (crucible) to be installed in the evaporation apparatus instead of storing the obtained evaporation material separately. According to the present invention, it is possible to cope with further high-purity deposition materials in the future. Alternatively, a metal material may be directly stored in a container to be installed in a vapor deposition apparatus, and vapor deposition may be performed using a heating resistor.

(4) The form of the container to be transported will be specifically described with reference to FIG. The second container divided into an upper part (721a) and a lower part (721b) used for transport is provided with a fixing means 706 provided on the upper part of the second container for fixing the first container, and for pressurizing the fixing means. A spring 705, a gas inlet 708 serving as a gas path for holding the second container at a reduced pressure provided in a lower part of the second container, an O-ring for fixing the upper container 721a and the lower container 721b, and a fastening. Tool 702. In the second container, a first container 701 in which a purified deposition material is sealed is provided. Note that the second container is preferably formed using a material including stainless steel, and the first container 701 is preferably formed using a material including titanium.

(4) At the material maker, the purified evaporation material is sealed in the first container 701. Then, the second upper part 721a and the lower part 721b are joined via an O-ring, the upper container 721a and the lower container 721b are fixed with the fastener 702, and the first container 701 is sealed in the second container. After that, the inside of the second container is depressurized through the gas inlet 708, further replaced with a nitrogen atmosphere, the spring 705 is adjusted, and the first container 701 is fixed by the fixing means 706. Note that a desiccant may be provided in the second container. When the inside of the second container is kept in a vacuum, reduced pressure, or nitrogen atmosphere as described above, even slight adhesion of oxygen or water to the deposition material can be prevented.

で In this state, the first container 701 is transported to the light emitting device maker and set in the vapor deposition chamber. After that, the evaporation material is sublimated by heating, and a deposition film is formed.

Also, it is preferable that other components, for example, a film thickness monitor (a crystal oscillator or the like), a shutter, and the like are similarly transported without touching the atmosphere, and installed in a vapor deposition apparatus.

It is desirable that the light emitting device maker using the vapor deposition device request the material maker that produces or sells the vapor deposition material to directly store the vapor deposition material in the container installed in the vapor deposition device. By cooperating with the light emitting device manufacturer and the material manufacturer to reduce the contamination of impurities, it is possible to maintain the extremely high purity EL material obtained by the material manufacturer and perform the vapor deposition at the light emitting device manufacturer without reducing the purity as it is. .

Also, no matter how high the purity of the EL material is provided by the material manufacturer, there is a risk of contamination of impurities as long as the light emitting device manufacturer has the conventional relocation work, and the purity of the EL material cannot be maintained. The purity was limited.

In view of the above problems, in the present invention, a crucible (filled with a vapor deposition material) vacuum-sealed in a container is removed from the container without touching the atmosphere, and an installation chamber for setting the crucible in a vapor deposition holder is formed. The crucible is connected to the membrane chamber, and the crucible is transferred by the transfer robot from the installation room without touching the atmosphere. It is preferable to provide a vacuum exhaust means also in the installation chamber and further provide a means for heating the crucible.

機構 With reference to FIGS. 8A and 8B, a mechanism for installing the first container 701 sealed and conveyed in the second containers 721a and 721b in the film formation chamber will be described.

FIG. 8A illustrates an installation room including a turntable 707 on which second containers 721 a and 721 b containing first containers are placed, a transport mechanism for transporting the first containers, and a lifting mechanism 711. 705 is shown. Further, the installation chamber is disposed adjacent to the film formation chamber, and the atmosphere in the installation chamber can be controlled by means for controlling the atmosphere via a gas inlet. Note that the transport mechanism of the present invention is not limited to a configuration in which the first container 701 is sandwiched (pinched) from above the first container 701 as shown in FIG. 8B. Alternatively, a configuration in which the first container is conveyed across the side surface may be used.

。In such an installation room, the second container is arranged on the rotating installation table 713 with the fastener 702 removed. Since the inside is in a vacuum state, it cannot be removed even if the fastener 702 is removed. Next, the inside of the installation room is depressurized by means for controlling the atmosphere. When the pressure in the installation chamber is equal to the pressure in the second container, the second container can be easily opened. Then, the upper portion 721a of the second container is removed by the lifting mechanism 711, and the lower portion of the second container and the first container are moved by the rotation of the rotary installation base 713 about the rotation shaft 712. Then, the first container 701 is transported to the vapor deposition chamber by the transport mechanism, and the first container 701 is set on a vapor deposition source holder (not shown).

(4) Thereafter, the evaporation material is sublimated by the heating means provided in the evaporation source holder, and the film formation is started. When a shutter (not shown) provided in the evaporation source holder is opened during the film formation, the sublimated evaporation material is scattered in the direction of the substrate, is deposited on the substrate, and is formed on the light emitting layer (the hole transport layer, the hole injection layer). , An electron transport layer and an electron injection layer).

Then, after the vapor deposition is completed, the first container is lifted from the vapor deposition source holder, transported to the installation chamber, and placed on the lower container (not shown) of the second container installed on the rotary table, and the upper container 721a. Sealed. At this time, it is preferable that the first container, the upper container, and the lower container are hermetically sealed in the transported combination. In this state, the installation room is set to the atmospheric pressure, the second container is taken out of the installation room, and the fastener 702 is fixed and transported to the material maker.

Alternatively, a robot may be provided in the pre-processing chamber (installation chamber) connected to the film-forming chamber, and the evaporation source may be moved from the film-forming chamber to the pre-processing chamber together with the evaporation source, and the deposition material may be set in the pre-processing chamber. That is, a manufacturing apparatus in which the evaporation source moves to the pretreatment chamber may be used. By doing so, the evaporation source can be set while maintaining the degree of cleaning of the film formation chamber.

Further, according to the present invention, as shown in FIG. 10, in a multi-chamber type manufacturing apparatus having a plurality of film formation chambers, a first film formation chamber for vapor deposition on a first substrate and a vapor deposition on a second substrate are provided. And a plurality of organic compound layers may be stacked in parallel (parallel) in each of the film formation chambers to shorten the processing time per substrate. That is, after carrying the first substrate from the transfer chamber into the first film formation chamber, the second substrate is transferred from the transfer chamber to the second film formation chamber while vapor deposition is performed on the first substrate. The substrate is loaded and vapor deposition is performed on the second substrate.

In FIG. 10, since six transfer chambers are provided in the transfer chamber 1004a, six substrates can be carried into each of the transfer chambers and vapor deposition can be sequentially performed in parallel. Further, even during maintenance, vapor deposition can be sequentially performed in another film forming chamber without temporarily stopping the production line.

In addition, as an example of the procedure of vapor deposition for forming a layer containing an organic compound according to the present invention, first, a container in which a crucible is vacuum-sealed in an installation room, and the installation room is evacuated, Remove the crucible. Next, heating is performed to raise the temperature T of the crucible, but control is performed by setting the degree of vacuum lower than the degree of vacuum at the time of vapor deposition so that vapor deposition does not start in the installation room. Next, the heated crucible is transferred from the installation room to the evaporation room. The vapor deposition holder in the vapor deposition chamber is heated in advance, and the crucible is set, and vapor deposition is started by further increasing the degree of vacuum. The deposition holder can move in the X direction or the Y direction, and can uniformly form a film on a fixed substrate. By heating in advance, the time required for heating the crucible can be reduced.

According to the present invention, since there is no need to rotate a substrate, a deposition apparatus capable of supporting a large-area substrate can be provided. Further, it is possible to provide an evaporation apparatus which can obtain a uniform film thickness even when a large-area substrate is used.

According to the present invention, the distance between the substrate and the evaporation source holder can be reduced, and the size of the evaporation apparatus can be reduced. And since a vapor deposition apparatus becomes small, adhesion of the sublimated vapor deposition material to the inner wall in a film formation chamber or an anti-adhesion shield is reduced, and the vapor deposition material can be used effectively.

According to the present invention, it is possible to provide a manufacturing apparatus in which a plurality of film forming chambers for performing a vapor deposition process are continuously arranged. When the parallel processing is performed in a plurality of film formation chambers in this manner, the throughput of the light emitting device is improved.

(Embodiment 1)
FIG. 1 shows a schematic top view of the vapor deposition apparatus of the present invention. FIG. 1 shows the state during the vapor deposition.

In FIG. 1, a film forming chamber 11 includes an evaporation source holder 17 in which a substrate holding unit 12 is installed, a unit for moving the evaporation source holder (not shown), and a unit for reducing the pressure (vacuum evacuation unit). Have. In the film forming chamber 11, a large substrate 13 and an evaporation mask (not shown) are installed.

{Circle around (2)} The substrate holding means 12 fixes the metal evaporation mask by gravity, and also fixes the substrate 13 disposed on the mask. Note that a vacuum suction mechanism may be provided in the substrate holding means 12 to vacuum-suction and fix the mask. Here, an example in which the evaporation mask is welded or adhered to the substrate holding means 12 is shown. However, in order to prevent the evaporation mask and the substrate holding means from sticking to each other, an insulator may be provided at a place where they are in contact with each other, The shape of the substrate holding means may be appropriately changed so as to achieve point contact. Further, here, an example in which both the substrate and the deposition mask are placed by the substrate holding means 12 has been described, but the means for holding the substrate and the means for holding the deposition mask may be provided separately. Although the substrate holding means is not shown, it is fixed to the film forming chamber.

蒸 着 Because vapor deposition cannot be performed in an area overlapping with the substrate holding means 12, it is preferable that the substrate holding means 12 be provided in a cutting area (an area that becomes a scribe line) when performing multi-face removal. Alternatively, the substrate holding means 12 may be provided so as to overlap a region to be a panel terminal portion. As shown in FIG. 1, the substrate holding means 12 has a cross shape because it shows an example in which four panels indicated by dotted lines are formed on one substrate 13 when viewed from above, but the shape is not particularly limited. Instead, the shape may be asymmetric. Although not shown, the substrate holding means 12 is fixed to a film forming chamber. FIG. 1 does not show a mask for simplification.

In addition, alignment of the deposition mask and the substrate may be checked using a CCD camera (not shown). An alignment marker may be provided on each of the substrate and the vapor deposition mask to perform position control. A container in which a vapor deposition material 18 is sealed is provided in the vapor deposition source holder 17. The film forming chamber 11 is evacuated to a vacuum degree of 5 × 10 ⁻³ Torr (0.665 Pa) or less, preferably 10 ⁻⁴ to 10 ⁻⁶ Pa by means of a reduced pressure atmosphere.

At the time of vapor deposition, the vapor deposition material is previously sublimated (vaporized) in the installation chamber 33b by resistance heating, and when the vapor deposition rate is stabilized, the shutter 30 is opened and the vapor deposition source holder 17 is moved into the inside of the film formation chamber 11, and Pass underneath. The evaporated material is scattered upward, and is selectively deposited on the substrate 13 through an opening provided in the deposition mask. Note that it is preferable that the microcomputer can control the film forming speed, the moving speed of the evaporation source holder, and the opening and closing of the shutter. The deposition rate can be controlled by the moving speed of the deposition source holder. Further, a shutter for controlling film formation may be separately provided in the evaporation holder.

In addition, in FIG. 1, a plurality of deposition holders 17 can stand by in the installation chambers 33b and 33c, and can be sequentially moved to stack a plurality of types of films.

Although not shown, deposition can be performed while measuring the thickness of the deposition film using a film thickness monitor provided on a deposition holder, for example, a quartz oscillator. When measuring the film thickness of the deposited film using this quartz oscillator, a change in the mass of the film deposited on the quartz oscillator can be measured as a change in the resonance frequency.

In the vapor deposition apparatus shown in FIG. 1, at the time of vapor deposition, the distance d between the substrate 13 and the vapor deposition source holder 17 is typically reduced to 30 cm or less, preferably 20 cm or less, and more preferably 5 cm to 15 cm. The use efficiency and the throughput are remarkably improved.

{Circle around (2)} FIG. 2 is a schematic cross-sectional view in which the vicinity of the substrate is enlarged during the vapor deposition. FIG. 2 shows a rectangular deposition holder 204 having six containers (crucibles) 202. The six containers 202 are provided with a film thickness monitor 201 as appropriate. The tilt adjusting screw 205 is appropriately provided similarly to the film thickness monitor 201, and can tilt the heater 203 with respect to the substrate 200. Here, a heater 203 is used as a heating means, and vapor deposition is performed by a resistance heating method.

(4) In the case where a layer containing an organic compound capable of emitting R, G, and B light is selectively formed to obtain a full-color light-emitting element, film formation is performed selectively using three evaporation masks. FIG. 6 shows an example in which the light emitting areas of the red light emitting element, the green light emitting element, and the blue light emitting element having different luminous efficiencies are changed. Further, it is preferable that the film thickness of the hole transport layer or the hole injection layer, the electron transport layer or the electron injection layer be changed depending on the emission color and appropriately adjusted. Here, an example in which red light emission area> blue light emission area> green light emission area is shown, but there is no particular limitation.

FIG. 6A shows a deposition mask for R, FIG. 6B shows a deposition mask for B, and FIG. 6C shows a deposition mask for G.

Using a deposition mask for R in the first film formation chamber (FIG. 6A), a hole transport layer or a hole injection layer, a light emitting layer (R), an electron transport layer or an electron injection layer are sequentially laminated. 2 In a film forming chamber, a hole transport layer or a hole injection layer, a light emitting layer (G), an electron transport layer or an electron injection layer are sequentially stacked using a deposition mask for G (FIG. 6C). After a hole transporting layer or a hole injecting layer, a light emitting layer (B), an electron transporting layer or an electron injecting layer are sequentially stacked in a film formation chamber using a deposition mask for B (FIG. 6B), a cathode is formed. When formed, a full-color light-emitting element can be obtained. A part of the light-emitting region (light-emitting region for eight pixels) thus obtained is shown in FIG. 6D.

FIG. 7 shows an example in which the red, green, and blue light emitting elements have the same light emitting area. When the light emitting areas are the same, the opening shapes in the respective masks are the same, and only the positional alignment is different. Therefore, the deposition mask for R, the deposition mask for G, and the deposition mask for B can be formed based on the same glass mask, so that the cost can be reduced. In particular, it is possible to reduce the design cost of a deposition mask for a large substrate. Further, as shown in FIG. 7C, when four masks are combined with good alignment accuracy to form one mask, the cost can be significantly reduced. Can be.

Three evaporation masks shown in FIG. 7A are prepared for R, G, and B. However, only the positions of the openings are different. A part of the light emitting region (light emitting region for 8 pixels) obtained by sequentially laminating these masks is shown in FIG. 7B.

{Circle around (2)} The substrate 200 is aligned with the masks 207a and 207b and the substrate holding means using a CCD or the like. Here, an example of multi-paneling is shown, and since a large-sized mask corresponding to a large-sized substrate is expensive, a plurality of small masks are integrated with high precision. For example, when four panels are to be formed over a large substrate (600 cm × 720 cm), a mask in which four masks (300 cm × 360 cm) are integrated as shown in FIG. 7C may be used. The cost required for mask design can be reduced by aligning the four substrates and bonding them together. In order to integrate a plurality of masks, they may be fixed to the substrate holding means by welding or bonding. Further, a slide-type shutter (not shown) may be provided to control vapor deposition. For example, when the evaporation holder moves and there is no evaporation holder below the substrate 201, the evaporation can be stopped by closing with a shutter. Such a deposition source holder 204 is moved in a X-direction or a Y-direction in a film formation chamber on a two-dimensional plane by a moving mechanism 206 (typically, a two-axis stage). Further, in FIG. 2, a vapor deposition holder having six containers has been described as an example, but the present invention is not particularly limited, and a vapor deposition holder having six or more containers may be used.

成膜 With the film formation chamber having the mechanism for moving the evaporation source holder as described above, it is not necessary to increase the distance between the substrate and the evaporation source holder, and it is possible to uniformly form an evaporation film.

Therefore, according to the present invention, the distance between the substrate and the evaporation source holder can be reduced, and the size of the evaporation apparatus can be reduced. And since a vapor deposition apparatus becomes small, adhesion of the sublimated vapor deposition material to the inner wall in a film formation chamber or an anti-adhesion shield is reduced, and the vapor deposition material can be used effectively. Furthermore, in the evaporation method of the present invention, since it is not necessary to rotate the substrate, it is possible to provide an evaporation apparatus capable of handling a large-area substrate.

By shortening the distance between the substrate and the evaporation source holder in this manner, a thin evaporated film can be deposited with good control.

セ ッ ト Further, the setting of the crucible on the vapor deposition holder is performed by transporting the crucible installed on the rotating table 35 provided in the installation chamber 33a to the installation chamber 33b by the transport mechanism 31. In the present invention, a crucible (filled with a vapor deposition material) vacuum-sealed in a container is removed from the container without touching the atmosphere, and an installation chamber for setting the crucible in a vapor deposition holder is connected to the film formation chamber. The crucible is transported by the transport robot from the installation room without touching the atmosphere. It is preferable to provide a vacuum exhaust means also in the installation chamber and further provide a means for heating the crucible.

機構 With reference to FIGS. 8A and 8B, a mechanism for installing the first container 701 sealed and conveyed in the second containers 721a and 721b in the film formation chamber will be described.

FIG. 8A illustrates an installation room including a turntable 707 on which second containers 721 a and 721 b containing first containers are placed, a transport mechanism for transporting the first containers, and a lifting mechanism 711. 705 is shown. Further, the installation chamber is disposed adjacent to the film formation chamber, and the atmosphere in the installation chamber can be controlled by means for controlling the atmosphere via a gas inlet. Note that the transport mechanism of the present invention is not limited to a configuration in which the first container 701 is sandwiched (pinched) from above the first container 701 as shown in FIG. 8B. Alternatively, a configuration in which the first container is conveyed across the side surface may be used.

。In such an installation room, the second container is arranged on the rotating installation table 713 with the fastener 702 removed. Since the inside is in a vacuum state, it cannot be removed even if the fastener 702 is removed. Next, the inside of the installation room is depressurized by means for controlling the atmosphere. When the pressure in the installation chamber is equal to the pressure in the second container, the second container can be easily opened. Then, the upper portion 721a of the second container is removed by the lifting mechanism 711, and the lower portion of the second container and the first container are moved by the rotation of the rotary installation base 713 about the rotation shaft 712. Then, the first container 701 is transported to the vapor deposition chamber by the transport mechanism, and the first container 701 is set on a vapor deposition source holder (not shown).

(4) Thereafter, the evaporation material is sublimated by the heating means provided in the evaporation source holder, and the film formation is started.

After the evaporation is completed, the first container is lifted from the evaporation source holder, transported to the installation chamber, and placed on the lower container (not shown) of the second container installed on the rotating table 35, and the upper container 721a. At this time, it is preferable that the first container, the upper container, and the lower container are hermetically sealed in the transported combination. In this state, the installation chamber 33a is set to the atmospheric pressure, the second container is taken out of the installation chamber, and the fastener 702 is fixed and transported to the material maker.

(Embodiment 2)
Next, the configuration of the substrate holding means of the present invention will be described in detail with reference to FIG.

FIG. 3 (A1) shows a perspective view of the substrate holding means 301 on which the substrate 303 and the mask 302 are mounted, and FIG. 3 (A2) shows only the substrate holding means 301.

FIG. 3A3 is a cross-sectional view of the substrate holding means on which the substrate 303 and the mask 302 are placed. The height h is 10 mm to 50 mm, and the width w is 1 mm to 5 mm. Ti).

(4) The substrate holding means 301 can suppress the deflection of the substrate or the deflection of the mask.

{Circle around (3)} The shape of the substrate holding means 301 is not limited to FIGS. 3 (A1) to 3 (A3), and may be, for example, a shape as shown in FIG. 3 (B2).

FIG. 3B2 shows an example in which a portion for supporting the edge of the substrate is provided, and the substrate holding means 305 suppresses the deflection of the substrate 303 or the deflection of the mask 302. FIG. 3B2 shows only the substrate holding means 305. FIG. 3B1 is a perspective view of the substrate holding unit 305 on which the substrate 303 and the mask 302 are placed.

Further, instead of the shape of the substrate holding means, a shape as shown in FIG. 3 (C2) may be used. FIG. 3C2 shows an example in which a mask frame 306 for supporting the edge of the substrate is provided. The substrate holding means 307 and the mask frame 306 suppress the deflection of the substrate 303 or the deflection of the mask 302. In this case, they may be formed of different materials. Further, the mask frame 306 is provided with a depression for fixing the position of the mask 302 as shown in FIG. Note that the substrate holding means 307 and the mask frame 306 may be integrated.

FIG. 3C2 shows only the mask frame 306 and the substrate holding means 307. FIG. 3C1 is a perspective view of the substrate holding unit 305 on which the substrate 303 and the mask 302 are mounted and the mask frame 306.

In addition, this embodiment mode can be freely combined with Embodiment Mode 1.

(Embodiment 3)
In Embodiment 1, an example of a film formation chamber including a plurality of evaporation holders is described. Here, an example including only one evaporation holder is illustrated in FIG.

FIG. 4 shows a vapor deposition apparatus of the present invention. FIG. 4A is a cross-sectional view in the Y direction (cross section taken along a dotted line A-A ′), and FIG. 4B is a top view. FIG. 4 shows the state during the vapor deposition.

4A, the film formation chamber 411 includes a substrate holding unit 412, an evaporation source holder 417 provided with an evaporation shutter 415, a mechanism 420 for moving the evaporation source holder, and a unit for reducing the pressure. In the film formation chamber 411, a large substrate 413 and a deposition mask 414 are provided. Further, the substrate holding means 412 fixes the vapor deposition mask 314 made of metal by gravity, and also fixes the substrate 413 disposed on the mask. Note that the substrate holding means 412 may be provided with a vacuum suction mechanism to fix the mask by vacuum suction.

In addition, in order to clean the deposits attached to the mask, it is preferable that plasma is generated in the film formation chamber by the plasma generating means, and the deposits attached to the mask are vaporized and exhausted to the outside of the film formation chamber. Therefore, a high-frequency power supply is connected to the substrate holding means 412. As described above, it is preferable that the substrate holding means 412 be formed of a conductive material (such as Ti). When generating plasma, it is preferable that the metal mask be electrically floated from the substrate holding means 412 in order to prevent concentration of an electric field.

Further, the movement pitch of the evaporation source holder 417 may be appropriately adjusted to the interval between the insulators (also referred to as banks and partition walls) 410. Note that the insulator 410 is provided so as to cover an end of the first electrode 421.

(4) An example of the procedure of vapor deposition using the apparatus shown in FIG.

First, the substrate transfer shutter is opened, and the large substrate 413 is carried into the film formation chamber 411 by passing through the film formation chamber 411, and is placed on the substrate holding means 412 and the vapor deposition mask 414 after performing position alignment. The large substrate 413 is provided with a TFT, a first electrode 421, and an insulator 410 in advance, and is carried in by a face-down method. It is preferable that the film formation chamber 411 is always kept under reduced pressure, for example, at a degree of vacuum of 10 ⁻⁵ to 10 ⁻⁶ Pa.

Next, the second container 434 in which the first container 436 is vacuum-sealed is introduced from the door of the installation chamber 433 and mounted on the turntable 435.

Next, the inside of the installation chamber 433 is depressurized by the vacuum evacuation means to make the degree of vacuum inside the second container 434 equal to or higher than the degree of vacuum. Next, only the second container 434 is lifted by the lifting mechanism 432, thereby exposing the first container 436. Next, the degree of vacuum in the film formation chamber and the degree of vacuum in the installation chamber 433 are adjusted, the shutter 430 is opened, and then the first container 436 is transported by the transport mechanism 431 and set on the evaporation holder 417. Note that the first container may be heated in advance in the installation chamber 433 before being transported by the transport mechanism 431. After the necessary number of first containers are set in the vapor deposition holder 417, the shutter 430 is closed, and vapor deposition is started by the resistance heating method.

(4) When performing vapor deposition, the vapor deposition holder 417 is moved in the X direction or the Y direction by the moving mechanism 420 so that a film is formed on the entire surface of the substrate.

In the case of stacking different materials, the first container after the evaporation is returned to the turntable, the first container in which the different materials are sealed is set in the evaporation holder, and the moving mechanism 420 again moves in the X direction or What is necessary is just to move in the Y direction.

After the evaporation is completed, the substrate transport shutter is opened, the substrate transport shutter is opened, and the substrate 413 is carried out. Then, the first container is returned to the turntable by the transport mechanism 431. Next, if necessary, one or more gases selected from Ar, H, F, NF ₃ , or O are introduced to clean the evaporation mask and the substrate holding means, and a voltage is applied to the evaporation mask by a high frequency power supply. Is applied to generate plasma.

In addition, this embodiment mode can be freely combined with Embodiment Mode 1 or Embodiment Mode 2.

(Embodiment 4)
Here, an example in which the longitudinal direction of the evaporation holder is oblique to one side of the substrate and an example in which the direction of the substrate is oblique to the moving direction of the evaporation holder will be described with reference to FIG.

In the case of a vapor deposition holder in which a plurality of crucibles are arranged, there is a limit to the distance between the crucibles adjacent to the crucibles even if they are densely arranged. An outer frame (with built-in heater and cooling means) for fitting and fixing the crucible, a shutter, a film thickness monitor, and the like are provided between the adjacent crucibles. Depending on the deposition rate, the moving speed of the deposition holder, and the distance between the deposition holder and the substrate, moving in the direction perpendicular to the longitudinal direction of the deposition holder will result in poor film formation in the places where the distance is wide. And the film thickness tends to be non-uniform. When the moving speed of the vapor deposition holder is high and the distance between the substrate and the vapor deposition source is narrow, it is likely to appear remarkably. Further, the light emitting region becomes uneven due to the non-uniform film thickness, and for example, tends to be vertical stripes or horizontal stripes.

Therefore, in the present invention, as shown in FIG. 5A, the longitudinal direction of the vapor deposition holder 517 is set at an angle Z (0 ° <Z <90 °) with the X direction (or Y direction) of the substrate 513. The deposition is performed by moving the deposition holder in the Y direction toward the direction of formation. For example, when the longitudinal direction of the evaporation holder is Z = 45 degrees with respect to the X direction of the substrate, and the evaporation is performed while moving the evaporation holder in the Y direction, the distance between the crucible and the adjacent crucible is 1, and the X direction of the substrate is Is deposited at an interval of 1 / √2. Therefore, the distance between the portions to be vapor-deposited (the distance in the X direction) is reduced, and the film thickness can be made uniform in the pixel region. However, in this case, since the width of the region to be vapor-deposited is narrowed, the length may be set to be longer according to the region to be vapor-deposited, and the length in the longitudinal direction of the vapor deposition holder and the number of crucibles may be set.

Further, instead of making the longitudinal direction of the vapor deposition holder oblique to the X direction (or Y direction) of the substrate, as shown in an example in FIG. 527 may be moved along path 522. In this case, by forming the length of the vapor deposition holder in the longitudinal direction longer than the length of the substrate on the diagonal line, it is possible to collectively form a film on the entire surface of the substrate. If the length of the evaporation holder in the longitudinal direction is shorter than one side of the substrate, the film may be formed by repeating scanning several times. Further, the same thin film may be laminated several times by repeatedly moving the deposition holder along the same path.

When a linear laser beam (pulse oscillation type) is used to form a TFT, the laser beam scans in parallel to the X direction or the Y direction. As a result, the crystal state may be different, and as a result, stripes (stripes formed along a direction perpendicular to the scanning direction 524 of the laser beam) may be formed in the light emitting region.

For example, a silicon film having an amorphous structure or a silicon film having a crystal structure is irradiated with laser light (XeCl: wavelength 308 nm) in the air or in an oxygen atmosphere, and a semiconductor having a obtained crystal structure is obtained. The film is used as an active layer of the TFT. Using a pulsed laser beam having a repetition frequency of about 10 to 1000 Hz, the laser beam is condensed to 100 to 500 mJ / cm ² by an optical system and irradiated with an overlap ratio of 90 to 95% to scan the silicon film surface. Just do it.

In order to obtain a crystal with a large grain size in crystallization of the amorphous semiconductor film, it is preferable to use a solid-state laser capable of continuous oscillation and apply the second to fourth harmonics of a fundamental wave. Typically, Nd: YVO ₄ may be applied laser (fundamental wave 1064 nm) second harmonic (532 nm) or the third harmonic (355 nm). When a continuous wave laser is used, laser light emitted from a continuous wave YVO ₄ laser having an output of 10 W is converted into a harmonic by a nonlinear optical element. There is also a method in which a YVO ₄ crystal and a nonlinear optical element are put in a resonator to emit a harmonic. Then, the laser light is preferably shaped into a rectangular or elliptical laser beam on the irradiation surface by an optical system, and the laser beam is irradiated on the object to be processed. At this time, the energy density of approximately 0.01 to 100 MW / cm ² (preferably 0.1 to 10 MW / cm ²⁾ is required. Then, irradiation may be performed by moving the semiconductor film relatively to the laser light at a speed of about 10 to 2000 cm / s.

Similarly, when laser light (continuous oscillation type) is used to form a TFT, stripes (stripes formed along a direction parallel to the scanning direction 524 of laser light) may be formed in a light emitting region. is there. Therefore, it is preferable to make the moving direction of the elongate rectangular evaporation source holder different from the scanning direction of the laser beam, and make the angle larger than 0 ° and smaller than 90 °. By doing so, the stripe pattern caused by the laser beam can be made inconspicuous. Further, stripes due to the distance between the containers installed in the evaporation holder and stripes due to the moving speed of the evaporation holder can be made inconspicuous.

Further, in this embodiment, an example in which the substrate is fixed and the deposition holder is moved has been described, but a configuration in which the deposition holder is fixed and the substrate is moved may be adopted.

Further, this embodiment mode can be freely combined with any one of Embodiment Modes 1 to 3.

In the above description, as a typical example, an example in which three layers of a hole transport layer, a light-emitting layer, and an electron transport layer are stacked as a layer containing an organic compound disposed between a cathode and an anode has been described. There is no particular limitation, and a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer, or a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer / an electron injection layer are laminated on the anode in this order. A structure, a two-layer structure or a single-layer structure may be used. The light emitting layer may be doped with a fluorescent dye or the like. Further, as the light emitting layer, there are a light emitting layer having a hole transporting property, a light emitting layer having an electron transporting property, and the like. All of these layers may be formed using a low molecular material, or one or some of them may be formed using a high molecular material. In this specification, all layers provided between the cathode and the anode are collectively referred to as a layer containing an organic compound (EL layer). Therefore, the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer are all included in the EL layer. The layer containing an organic compound (EL layer) may also contain an inorganic material such as silicon.

Note that the light-emitting element (EL element) includes a layer containing an organic compound that can obtain luminescence (Electro Luminescence) generated by application of an electric field (hereinafter, referred to as an EL layer), an anode, and a cathode. Luminescence of an organic compound includes light emission when returning from a singlet excited state to a ground state (fluorescence) and light emission when returning from a triplet excited state to a ground state (phosphorescence), which are produced by the present invention. The light emitting device can be applied to the case of using either light emission.

In the light emitting device of the present invention, a driving method for screen display is not particularly limited, and for example, a dot sequential driving method, a line sequential driving method, a plane sequential driving method, or the like may be used. Typically, a line-sequential driving method is used, and a time-division grayscale driving method or an area grayscale driving method may be used as appropriate. Further, the video signal input to the source line of the light emitting device may be an analog signal or a digital signal, and a drive circuit or the like may be appropriately designed in accordance with the video signal.

In this specification, a light-emitting element formed of a cathode, an EL layer, and an anode is referred to as an EL element, and includes an EL layer between two types of stripe-shaped electrodes provided to be orthogonal to each other. There are two types: a formation method (simple matrix method), and a method of forming an EL layer between a pixel electrode connected to a TFT and arranged in a matrix and an opposing electrode (active matrix method).

Further, the present invention is not limited to a TFT using an active layer of a semiconductor film having a crystalline structure, but may be an n-channel TFT using amorphous silicon as an active layer, or a TFT using a semi-amorphous semiconductor (hereinafter also referred to as SAS) as an active layer. Is also good.

Note that a semi-amorphous semiconductor film is also called a microcrystalline semiconductor film or a microcrystalline semiconductor film, has an intermediate structure between an amorphous structure and a crystalline structure (including a single crystal and a polycrystal), and has a low free energy. A semiconductor having a stable third state, which includes a crystalline region having short-range order and lattice distortion. In addition, the semi-amorphous semiconductor film contains crystal grains of 0.5 to 20 nm in at least a part of the film, and the Raman spectrum is shifted to a lower wave number side than 520 cm ^-1 . In the semi-amorphous semiconductor film, diffraction peaks (111) and (220), which are considered to be derived from a Si crystal lattice in X-ray diffraction, are observed. Further, the semi-amorphous semiconductor film contains at least 1 atomic% or more of hydrogen or halogen as a neutralizing agent for dangling bonds. As a method for manufacturing a semi-amorphous semiconductor film, a silicide gas is formed by glow discharge decomposition (plasma CVD). As the silicide gas, SiH ₄ , Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF ₄ or the like can be used. The silicide gas may be diluted with H ₂ , or H ₂ and one or more rare gas elements selected from He, Ar, Kr, and Ne. The dilution ratio is in the range of 2 to 1000 times. The pressure is in the range of approximately 0.1 Pa to 133 Pa, and the power supply frequency is 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz. The substrate heating temperature may be 300 ° C or lower, preferably 100 to 250 ° C. As the impurity element in the film, impurities of atmospheric components such as oxygen, nitrogen, and carbon are desirably 1 × 10 ²⁰ cm ⁻¹ or less, and particularly, the oxygen concentration is 5 × 10 ¹⁹ / cm ³ or less, preferably 1 × 10 ¹⁹ / cm ³ or less. × 10 ¹⁹ / cm ³ or less. The field effect mobility μ of a TFT using a semi-amorphous semiconductor film as an active layer is 1 to 10 cm ² / Vsec.

By using an amorphous silicon film or a semi-amorphous silicon film as an active layer of a TFT, the number of steps in manufacturing a TFT can be reduced as compared with a TFT using a polycrystalline semiconductor film, and the yield of a light emitting device is correspondingly reduced. Can increase the cost.

本 The present invention having the above configuration will be described in more detail with reference to the following embodiments.

In this example, FIG. 10 shows an example of a multi-chamber manufacturing apparatus in which manufacturing from the first electrode to sealing is fully automated.

FIG. 10 shows gates 100a to 100x, transfer chambers 102, 1004a, 108, 114, 118, delivery chambers 105, 107, 111, charging chamber 101, first film forming chamber 1006R, and second film forming chamber. 1006G, a third film formation chamber 1006B, a fourth film formation chamber 1006R ', a fifth film formation chamber 1006G', a fifth film formation chamber 1006B ', and other film formation chambers 109, 110, 112, 113, and 132. An installation chamber (not shown) for installing an evaporation source, pretreatment chambers 103a and 103b, a sealing chamber 116, a mask stock chamber 124, a sealing substrate stock chamber 130, cassette chambers 120a and 120b, This is a multi-chamber manufacturing apparatus having a tray mounting stage 121 and an unloading chamber 119. Note that a transfer mechanism 104b for transferring the substrate 104c is provided in the transfer chamber 1004a, and each of the other transfer chambers is also provided with a transfer mechanism.

Hereinafter, a procedure in which a substrate provided with an anode (first electrode) and an insulator (partition) covering an end portion of the anode in advance is loaded into the manufacturing apparatus illustrated in FIG. 10 and a light-emitting device is manufactured will be described. Note that when an active matrix light-emitting device is manufactured, a plurality of thin film transistors (current control TFTs) connected to an anode and other thin film transistors (switching TFTs and the like) are provided on a substrate in advance and include a thin film transistor. A drive circuit is also provided. Further, in the case of manufacturing a simple matrix light-emitting device, the light-emitting device can be manufactured using the manufacturing apparatus illustrated in FIGS.

First, the substrate is set in the cassette chamber 120a or the cassette chamber 120b. When the substrate is a large substrate (for example, 300 mm × 360 mm), it is set in the cassette chamber 120 b, and when the substrate is a normal substrate (for example, 127 mm × 127 mm), it is set in the cassette chamber 120 a and then transferred to the tray mounting stage 121. Then, a plurality of substrates are set on a tray (for example, 300 mm × 360 mm).

The substrate set in the cassette chamber (a substrate provided with an anode and an insulator covering an end of the anode) is transferred to the transfer chamber 118.

Before setting in the cassette chamber, a porous sponge (typically, a surfactant) is added to the surface of the first electrode (anode) to reduce point defects. Washing with PVA (polyvinyl alcohol), nylon or the like) is preferable to remove dust on the surface. As the cleaning mechanism, a cleaning device having a roll brush (made of PVA) that rotates around an axis parallel to the surface of the substrate and contacts the surface of the substrate may be used, or may rotate around an axis perpendicular to the surface of the substrate. A cleaning device having a disk brush (made of PVA) that contacts the surface of the substrate while moving may be used. Before forming a film containing an organic compound, it is preferable to perform annealing for degassing in vacuum in order to remove moisture and other gases contained in the substrate. Then, it may be transferred to the bake chamber 123 and annealed there.

Next, the substrate is transferred to the preparation chamber 101 from the transfer chamber 118 provided with the substrate transfer mechanism. In the manufacturing apparatus of the present embodiment, the loading chamber 101 is provided with a substrate reversing mechanism, and the substrate can be appropriately reversed. The preparation chamber 101 is connected to a vacuum exhaust processing chamber, and it is preferable that the chamber is evacuated and then an inert gas is introduced to maintain the atmospheric pressure.

Then, it is transferred to the transfer chamber 102 connected to the preparation chamber 101. It is preferable to pre-evacuate and maintain a vacuum so that moisture and oxygen are not present in the transfer chamber 102 as much as possible.

The vacuum evacuation chamber is provided with a magnetically levitated turbo molecular pump, a cryopump, or a dry pump. Thereby, the ultimate vacuum degree of the transfer chamber connected to the charging chamber can be set to 10 ⁻⁵ to 10 ⁻⁶ Pa, and the reverse diffusion of impurities from the pump side and the exhaust system can be controlled. In order to prevent impurities from being introduced into the apparatus, an inert gas such as nitrogen or a rare gas is used as a gas to be introduced. These gases introduced into the apparatus are those that have been highly purified by a gas purifier before being introduced into the apparatus. Therefore, it is necessary to provide a gas purifier so that the gas is introduced into the vapor deposition device after being highly purified. Accordingly, oxygen, water, and other impurities contained in the gas can be removed in advance, so that introduction of these impurities into the device can be prevented.

In the case where a film containing an organic compound formed in an unnecessary portion is to be removed, the film may be transferred to the pretreatment chamber 103a and a stack of the organic compound film may be selectively removed. The pretreatment chamber 103a has a plasma generation unit, and performs dry etching by exciting one or more types of gas selected from Ar, H, F, and O to generate plasma. Further, a UV irradiation mechanism may be provided in the pretreatment chamber 103a so that ultraviolet irradiation can be performed as anode surface treatment.

In addition, in order to eliminate shrinkage, it is preferable to perform vacuum heating immediately before deposition of a film containing an organic compound, and transport the film to the pretreatment chamber 103b to thoroughly remove moisture and other gases contained in the substrate. For this purpose, annealing for degassing is performed in a vacuum (5 × 10 ⁻³ Torr (0.665 Pa) or less, preferably 10 ⁻⁴ to 10 ⁻⁶ Pa). In the pretreatment chamber 103b, a plurality of substrates are uniformly heated using a flat plate heater (typically, a sheath heater). In particular, when an organic resin film is used as a material for an interlayer insulating film or a partition, moisture is easily absorbed depending on the organic resin material, and further degassing may occur. Therefore, before forming a layer containing an organic compound, After heating at 100 ° C. to 250 ° C., preferably 150 ° C. to 200 ° C., for example, for 30 minutes or more, it is effective to perform natural cooling for 30 minutes to perform vacuum heating for removing adsorbed moisture.

Next, after performing the above-described vacuum heating, the substrate is transferred from the transfer chamber 102 to the transfer chamber 105, and further transferred from the transfer chamber 105 to the transfer chamber 1004a without touching the atmosphere.

After that, the substrate is appropriately transferred to the film formation chambers 1006R, 1006G, and 1006B connected to the transfer chamber 1004a, so that a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, or an electron injection layer is formed. An organic compound layer composed of molecules is appropriately formed.

In the film formation chamber 112, a hole injection layer made of a polymer material may be formed by an inkjet method, a spin coating method, or the like. Alternatively, the film may be formed by an inkjet method in a vacuum with the substrate placed vertically. A poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS), a polyaniline / camphorsulfonic acid aqueous solution (PEDOT / PSS) acting as a hole injection layer (anode buffer layer) on the first electrode (anode) PANI / CSA), PTPDES, Et-PTPDEK, PPBA, or the like may be applied and fired over the entire surface. The firing is preferably performed in the bake chamber 123. When a hole injection layer made of a polymer material is formed by a coating method using spin coating or the like, the flatness is improved, and the coverage and uniformity of the film formed thereon are improved. be able to. In particular, since the thickness of the light emitting layer becomes uniform, uniform light emission can be obtained. In this case, after the hole injection layer is formed by a coating method, it is preferable to perform vacuum heating (100 to 200 ° C.) immediately before film formation by a vapor deposition method. The heating in vacuum may be performed in the pretreatment chamber 103b. For example, after the surface of the first electrode (anode) is washed with a sponge, it is carried into a cassette chamber, transported to the film forming chamber 112, and poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) is formed by spin coating. An aqueous solution (PEDOT / PSS) is applied on the entire surface with a film thickness of 60 nm, and then transported to the baking chamber 123, pre-baked at 80 ° C. for 10 minutes, fully fired at 200 ° C. for 1 hour, and further transported to the pretreatment chamber 103b. After performing vacuum heating (170 ° C., heating 30 minutes, cooling 30 minutes) immediately before vapor deposition, the substrate is transferred to the film formation chambers 1006R, 1006G, and 1006B, and the light-emitting layer may be formed by a vapor deposition method without exposure to air. . In particular, when an ITO film is used as an anode material and irregularities or fine particles are present on the surface, these effects can be reduced by setting the thickness of PEDOT / PSS to 30 nm or more.

In addition, PEDOT / PSS has poor wettability when applied on an ITO film, so after applying the PEDOT / PSS solution for the first time by spin coating, it is washed once with pure water to improve wettability. Then, it is preferable that the PEDOT / PSS solution is applied again by the spin coating method for the second time, followed by baking to form a film with good uniformity. After the first application, the surface can be modified by once washing with pure water, and the effect of removing fine particles can be obtained.

When PEDOT / PSS is formed by spin coating, the film is formed on the entire surface, so that the end face, peripheral edge, terminals, connection area between the cathode and the lower wiring of the substrate can be selectively removed. Preferably, it is preferably removed by O ₂ ashing or the like in the pretreatment chamber 103a.

Here, the film forming chambers 1006R, 1006G, and 1006B will be described.

In each of the film forming chambers 1006R, 1006G, and 1006B, a movable evaporation source holder is provided. A plurality of the evaporation source holders are prepared, and a plurality of containers (crucibles) in which an EL material is sealed are appropriately provided, and are set in this state in a film forming chamber. A substrate can be set in a face-down manner, the position of a deposition mask is aligned with a CCD or the like, and the deposition can be selectively performed by performing deposition by a resistance heating method. Note that the evaporation mask is stocked in the mask stock chamber 124 and is appropriately transferred to the film formation chamber when performing evaporation. The film formation chamber 132 is a preliminary evaporation chamber for forming a layer containing an organic compound or a metal material layer.

設置 It is preferable to install the EL material in these film forming chambers by using the following manufacturing system. That is, it is preferable to form a film using a container (typically, a crucible) in which an EL material is stored in advance by a material maker. Further, it is preferable that the crucible is installed without being exposed to the atmosphere when it is installed, and it is preferable that the crucible is introduced into the film forming chamber while being sealed in the second container when transported from a material maker. Preferably, an installation chamber (not shown here) having a vacuum exhaust means connected to each of the film formation chambers 1006R, 1006G, 1006B, 1006R ', 1006G', 1006B 'is set to a vacuum or an inert gas atmosphere. The crucible is taken out from the second container and is set in the film forming chamber. FIG. 1 or FIG. 4 shows an example of the installation room. By doing so, the crucible and the EL material stored in the crucible can be prevented from being contaminated. Note that a metal mask can be stocked in the installation room.

By appropriately selecting an EL material to be provided in the deposition chambers 1006R, 1006G, 1006B, 1006R ', 1006G', and 1006B ', the entire light-emitting element can be monochromatic (specifically, white) or full-color (specifically, A light-emitting element which emits red, green, and blue light can be formed. For example, in the case of forming a green light-emitting element, after a hole transport layer or a hole injection layer, a light-emitting layer (G), and an electron transport layer or an electron injection layer are sequentially stacked in the deposition chamber 1006G, a cathode is formed. When formed, a green light-emitting element can be obtained. For example, when a full-color light-emitting element is formed, a hole-transport layer or a hole-injection layer, a light-emitting layer (R), an electron-transport layer, or an electron-injection layer are sequentially stacked in a deposition chamber 1006R using an R evaporation mask. Then, using a deposition mask for G in the film formation chamber 1006G, a hole transport layer or a hole injection layer, a light emitting layer (G), an electron transport layer or an electron injection layer are sequentially stacked, and a film for B is formed in the film formation chamber 1006B. By sequentially stacking a hole transport layer or a hole injection layer, a light emitting layer (B), an electron transport layer or an electron injection layer using the evaporation mask described above, and forming a cathode, a full-color light emitting element can be obtained.

Note that an organic compound layer that emits white light is a three-wavelength type containing three primary colors of red, green, and blue and a blue / yellow or blue-green / orange color when light-emitting layers having different emission colors are stacked. They are roughly classified into two-wavelength types using the relationship of complementary colors. It is also possible to form a white light emitting element in one film forming chamber. For example, when a white light emitting element is obtained using a three-wavelength type, a film forming chamber (an example is shown in FIG. 1) having a plurality of evaporation source holders each having a plurality of crucibles is prepared, and a first evaporation source holder is provided. aromatic diamine (TPD) in the second to the evaporation source holder p-EtTAZ, third evaporation source the holder Alq _3, the the fourth evaporation source holder is a red light emitting pigment in Alq ₃ NileRed Alq ₃ is sealed in the added EL material and the fifth evaporation source holder, and is placed in each film forming chamber in this state. Then, the first to fifth deposition source holders start moving in order, perform deposition on the substrate, and stack. Specifically, the TPD is sublimated from the first evaporation source holder by heating, and is evaporated on the entire surface of the substrate. Thereafter, p-EtTAZ is sublimated from the second evaporation source holder, Alq ₃ is sublimated from the _third evaporation source holder, Alq ₃ : NileRed is sublimated from the fourth evaporation source holder, and the fifth evaporation source holder Alq ₃ is sublimated from the substrate and deposited on the entire surface of the substrate. Thereafter, if a cathode is formed, a white light emitting element can be obtained.

(4) After the layers containing the organic compound are appropriately laminated by the above steps, the substrate is transferred from the transfer chamber 1004a to the transfer chamber 107, and further transferred from the transfer chamber 107 to the transfer chamber 108 without being exposed to the atmosphere.

Next, the substrate is transferred to the film formation chamber 110 by a transfer mechanism provided in the transfer chamber 108 to form a cathode. The cathode is made of a metal film (an alloy such as MgAg, MgIn, CaF ₂ , LiF, or CaN, or an element belonging to Group 1 or 2 of the periodic table and aluminum) formed by an evaporation method using resistance heating. A film formed by the method, or a laminated film thereof). Further, the cathode may be formed by a sputtering method.

In the case of manufacturing a top emission type light-emitting device, the cathode is preferably transparent or translucent, and the thin film of the metal film (1 nm to 10 nm) or the thin film of the metal film (1 nm to 10 nm) is used. It is preferable that a laminate with the transparent conductive film is used as the cathode. In this case, a film made of a transparent conductive film (ITO (indium oxide-tin oxide alloy), indium oxide-zinc oxide alloy (In ₂ O ₃ —ZnO), zinc oxide (ZnO), or the like) is formed in the film formation chamber 109 by a sputtering method. May be formed.

Through the above steps, a light emitting element having a laminated structure is formed.

Alternatively, the protective film may be transferred to the film formation chamber 113 connected to the transfer chamber 108 and formed with a silicon nitride film or a silicon nitride oxide film and sealed. A target made of silicon, a target made of silicon oxide, or a target made of silicon nitride is provided in the film formation chamber 113. For example, a silicon nitride film can be formed over a cathode by using a silicon target and setting the atmosphere in a deposition chamber to a nitrogen atmosphere or an atmosphere containing nitrogen and argon. Alternatively, a thin film containing carbon as a main component (DLC film, CN film, amorphous carbon film) may be formed as a protective film, or a separate film formation chamber using a CVD method may be provided. A diamond-like carbon film (also called a DLC film) is formed by a plasma CVD method (typically, an RF plasma CVD method, a microwave CVD method, an electron cyclotron resonance (ECR) CVD method, a hot filament CVD method, etc.), a combustion flame method, or the like. , A sputtering method, an ion beam evaporation method, a laser evaporation method, or the like. As a reaction gas used for film formation, a hydrogen gas and a hydrocarbon gas (for example, CH ₄ , C ₂ H ₂ , C ₆ H _6, etc.) were used, ionized by glow discharge, and negatively self-biased. A film is formed by accelerating and colliding ions with the cathode. The CN film may be formed using C ₂ H ₄ gas and N ₂ gas as reaction gases. Note that the DLC film and the CN film are insulating films that are transparent or translucent to visible light. Transparent to visible light means that the visible light transmittance is 80 to 100%, and translucent to visible light means that the visible light transmittance is 50 to 80%.

In this embodiment, a protective layer composed of a stack of a first inorganic insulating film, a stress relaxation film, and a second inorganic insulating film is formed on the cathode. For example, after forming a cathode, the film is transferred to the film formation chamber 113 to form a first inorganic insulating film, and then transferred to the film formation chamber 132 to be formed by a vapor deposition method. May be formed, and may be transferred to the film formation chamber 113 again to form a second inorganic insulating film.

Next, the substrate on which the light emitting elements are formed is transferred from the transfer chamber 108 to the transfer chamber 111 without being exposed to the atmosphere, and further transferred from the transfer chamber 111 to the transfer chamber 114. Next, the substrate on which the light emitting elements are formed is transferred from the transfer chamber 114 to the sealing chamber 116.

The sealing substrate is set in the load chamber 117 from the outside and prepared. Note that it is preferable to perform annealing in advance in vacuum to remove impurities such as moisture. In the case where a sealing material for bonding to a substrate provided with a light emitting element is formed on the sealing substrate, the sealing material is formed in a sealing chamber, and the sealing substrate on which the sealing material is formed is sealed in a sealing substrate stock chamber. It is transported to 130. Note that a desiccant may be provided on the sealing substrate in the sealing chamber. Note that although an example in which a sealant is formed over a sealing substrate is described here, the present invention is not particularly limited thereto. A sealant may be formed over a substrate over which a light-emitting element is formed.

Next, the sealing chamber 116 is bonded to the substrate and the sealing substrate, and the pair of bonded substrates is irradiated with UV light by an ultraviolet irradiation mechanism provided in the sealing chamber 116 to cure the sealant. Note that, here, an ultraviolet curable resin is used as a sealant, but there is no particular limitation as long as it is an adhesive.

Next, the pair of bonded substrates is transported from the sealing chamber 116 to the transport chamber 114 and from the transport chamber 114 to the unloading chamber 119 and taken out.

As described above, by using the manufacturing apparatus shown in FIG. 10, it is not necessary to expose the light-emitting element to the atmosphere until the light-emitting element is completely enclosed in a closed space, so that a highly reliable light-emitting device can be manufactured. In the transfer chambers 114 and 118, vacuum and a nitrogen atmosphere at atmospheric pressure are repeated, but it is desirable that the transfer chambers 102, 1004a and 108 always maintain a vacuum degree.

Although not shown here, a control controller is provided to control paths for moving the substrates to the individual processing chambers to realize automation.

In the manufacturing apparatus illustrated in FIG. 10, a substrate provided with a transparent conductive film (or a metal film (TiN)) is carried in as an anode, a layer containing an organic compound is formed, and then a transparent or translucent cathode (for example, A top emission type (or a dual emission type) light emitting element can be formed by forming a thin metal film (a laminate of a transparent conductive film and Al and Ag). Denotes an element that transmits light emitted from the organic compound layer by passing through a cathode.

Further, in the manufacturing apparatus shown in FIG. 10, a substrate provided with a transparent conductive film as an anode is carried in, a layer containing an organic compound is formed, and then a cathode made of a metal film (Al, Ag) is formed. It is also possible to form a bottom emission type light emitting element. Note that a bottom emission type light-emitting element refers to an element in which light generated in an organic compound layer is extracted from an anode, which is a transparent electrode, toward a TFT, and further passes through a substrate.

製造 Further, the manufacturing apparatus shown in FIG. 10 can manufacture full-color light emitting elements in parallel. For example, after a substrate heated in vacuum in the pretreatment chamber 103 is transferred from the transfer chamber 102 to the transfer chamber 1004a via the transfer chamber 105, the first substrate passes through the film formation chambers 1006R, 1006G, and 1006B. The second substrate is stacked by a route that passes through the film formation chambers 1006R ', 1006G', and 1006B '. As described above, by performing vapor deposition on a plurality of substrates in parallel, throughput can be improved. In the subsequent steps, if the cathode is formed and sealed, the light emitting device is completed.

In addition, although the number of substrates to be processed is reduced, for example, even during maintenance of the fourth to sixth film forming chambers 1006R ', 1006G', and 1006B ', the first to third components are not stopped without suspending the production line. Vapor deposition can be sequentially performed in the film chambers 1006R, 1006G, and 1006B.

Further, a hole transport layer of R, G, and B, a light emitting layer, and an electron transport layer may be laminated in three different film formation chambers. It should be noted that mask alignment is performed before vapor deposition, and a film is formed only in a predetermined region. In order to prevent color mixing, it is preferable to use different masks, and three masks are required. In the case of processing a plurality of substrates, for example, the first substrate is loaded into the first deposition chamber, a layer containing an organic compound emitting red light is deposited, the substrate is unloaded, and then the second deposition is performed. The second substrate may be carried into the first deposition chamber and a layer containing a red-emitting organic compound may be formed while the substrate is carried into a chamber and a layer containing a green-emitting organic compound is formed. Finally, the first substrate is carried into the third film formation chamber, and while the layer containing the organic compound emitting blue light is being formed, the second substrate is carried into the second film formation chamber. The substrates may be carried into the first film formation chamber and sequentially laminated.

Further, the hole transport layer, the light emitting layer, and the electron transport layer of R, G, and B may be stacked in the same film forming chamber. In the case where a hole transport layer, a light emitting layer, and an electron transport layer are successively laminated for R, G, and B in the same film forming chamber, RGB is shifted by positioning the mask during mask alignment, and three types of materials are used. The layers may be selectively formed. In this case, the mask is common, and only one mask is used.

In addition, this embodiment can be freely combined with any one of Embodiment Modes 1 to 4.

In this embodiment, an example in which an energy barrier existing in an organic compound film is relaxed to increase the mobility of carriers, and at the same time, an element having a function of various materials in the same manner as the function separation of a laminated structure is manufactured. Show.

Regarding the relaxation of the energy barrier in the laminated structure, the technique of inserting a carrier injection layer is remarkably observed. In other words, by inserting a material for relaxing the energy barrier at the interface of the laminated structure having a large energy barrier, the energy barrier can be designed stepwise. As a result, the ability to inject carriers from the electrode can be enhanced, and the driving voltage can be reduced to some extent. However, the problem is that by increasing the number of layers, the number of organic interfaces increases conversely. This is considered to be the reason that the single-layer structure holds the top data of drive voltage and power efficiency. Conversely, by overcoming this point, the drive voltage and power efficiency of the single-layer structure can be improved while taking advantage of the advantages of the stacked structure (a variety of materials can be combined and no complicated molecular design is required). You can catch up.

Therefore, in this embodiment, when an organic compound film composed of a plurality of functional regions is formed between the anode and the cathode of the light emitting element, the organic compound film does not have the conventional laminated structure having a clear interface, but has the first functional region and the second functional region. A structure having a mixed region made of both a material constituting the first functional region and a material constituting the second functional region is formed between the two functional regions.

The case where a material capable of converting triplet excitation energy into light emission is added as a dopant to the mixed region is also included. In forming the mixed region, the mixed region may have a concentration gradient.

エ ネ ル ギ ー By applying such a structure, it is considered that the energy barrier existing between the functional regions is reduced as compared with the conventional structure, and the injection property of carriers is improved. That is, the energy barrier between the functional regions is reduced by forming the mixed region. Therefore, it is possible to reduce the driving voltage and prevent the luminance from decreasing.

From the above, in the present embodiment, the region where the first organic compound can exhibit the function (first functional region) and the second organic compound different from the material constituting the first functional region have the function. In producing a light-emitting element including at least a region that can be expressed (a second functional region), and a light-emitting device including the same, the first functional region and the second functional region may include the first A mixed region comprising an organic compound constituting the functional region and an organic compound constituting the second functional region is prepared.

 In the film forming apparatus shown in FIG. 1, a plurality of rectangular evaporation holders can be used. Therefore, an organic compound film having a plurality of functional regions is formed in one film forming chamber, and a plurality of evaporation source holders are provided correspondingly.

First, the first organic compound is deposited by the first deposition holder. Note that the first organic compound is vaporized in advance by resistance heating, and scatters in the direction of the substrate when the first shutter is opened during vapor deposition. By repeating the movement of the first deposition holder, a first functional region 610 illustrated in FIG. 11B can be formed.

(5) While depositing the first organic compound, the second deposition holder is moved to deposit the second organic compound. Note that the second organic compound is also vaporized in advance by resistance heating, and scatters in the direction of the substrate when the second shutter is opened during vapor deposition. Here, a first mixed region 611 including the first organic compound and the second organic compound can be formed.

(5) Then, the first vapor deposition holder is stopped, and the second vapor deposition holder is repeatedly moved to vapor-deposit the second organic compound. Thereby, the second functional region 612 can be formed.

Note that, in this embodiment, a method in which a mixed region is formed by simultaneously moving and depositing a plurality of deposition holders has been described.After depositing the first organic compound, the second organic compound is deposited under the deposition atmosphere. By depositing an organic compound, a mixed region can be formed between the first functional region and the second functional region.

(4) While depositing the second organic compound, the third deposition holder is moved to deposit the third organic compound. Note that the third organic compound is also vaporized in advance by resistance heating, and scatters in the direction of the substrate when the third shutter is opened during vapor deposition. Here, a second mixed region 613 including the second organic compound and the third organic compound can be formed.

(5) Then, the second vapor deposition holder is stopped, and the third vapor deposition holder is repeatedly moved to vapor-deposit the third organic compound. Thus, a third functional region 614 can be formed.

(4) Finally, a light emitting element is completed by forming a cathode.

FIG. 11A shows an example of a light-emitting element without a mixed region. Using a device shown in FIG. 4, vapor deposition is performed in order to form a first functional region 610, a second functional region 612, and a third functional region 614, and finally, a cathode is formed, whereby a light emitting element is formed. Complete.

{FIG. 11C} shows an example of a light-emitting element without a mixed region. The first functional region 620 and the second functional region 622 are formed sequentially by using the apparatus shown in FIG. 4 to form a first functional region 620 and a second functional region 622. Finally, a cathode is formed to complete a light emitting element.

As another example of a light-emitting element provided with a mixed region, as shown in FIG. 11D, a first organic region is used to form a first functional region 620, and then a first organic compound is used. A first mixed region 621 made of a second organic compound is formed, and a second functional region 622 is formed using the second organic compound. Then, during the formation of the second functional region 622, the third mixed compound region 623 is formed by temporarily moving the third deposition holder to simultaneously perform the deposition of the third organic compound.

(5) Then, the third deposition holder is stopped, and the second deposition holder is repeatedly moved again to form the second functional region 622 again. Then, a light emitting element is formed by forming a cathode.

(4) Since an organic compound film having a plurality of functional regions can be formed in the same film forming chamber, a mixed region can be formed at the functional region interface without contamination of the functional region interface with impurities. Thus, a light-emitting element having a plurality of functions can be manufactured without a clear stacked structure (that is, without a clear organic interface).

In addition, if a film forming apparatus capable of performing vacuum annealing before, during, or after film formation is used, vacuum annealing is performed during film formation, so that molecules between the mixed regions can be more fitted. Can be. Therefore, it is possible to further reduce the driving voltage and prevent the luminance from lowering. Further, impurities such as oxygen and moisture in the organic compound layer formed on the substrate are further removed by annealing (degassing) after film formation, whereby a high-density and high-purity organic compound layer can be formed. .

This embodiment can be freely combined with any one of Embodiment Modes 1 to 4 and Embodiment 1.

In this embodiment, an example in which a light-emitting device (a top emission structure) including a light-emitting element including an organic compound layer as a light-emitting layer is manufactured over a substrate having an insulating surface is illustrated in FIGS.

Note that FIG. 12A is a top view illustrating the light-emitting device, and FIG. 12B is a cross-sectional view of FIG. 12A cut along A-A ′. Reference numeral 1101 indicated by a dotted line denotes a source signal line driver circuit, 1102 denotes a pixel portion, and 1103 denotes a gate signal line driver circuit. Reference numeral 1104 denotes a transparent sealing substrate, 1105 denotes a first sealing material, and the inside surrounded by the first sealing material 1105 is filled with a transparent second sealing material 1107. Note that the first sealant 1105 contains a gap material for keeping a distance between the substrates.

Reference numeral 1108 denotes a wiring for transmitting a signal input to the source signal line driver circuit 1101 and the gate signal line driver circuit 1103, and receives a video signal or a clock signal from an FPC (flexible printed circuit) 1109 serving as an external input terminal. receive. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC.

Next, a cross-sectional structure will be described with reference to FIG. A driver circuit and a pixel portion are formed over a substrate 1110; here, a source signal line driver circuit 1101 and a pixel portion 1102 are illustrated as the driver circuits.

Note that as the source signal line driver circuit 1101, a CMOS circuit in which an n-channel TFT 1123 and a p-channel TFT 1124 are combined is formed. Further, the TFT forming the driving circuit may be formed by a known CMOS circuit, PMOS circuit, or NMOS circuit. Further, in this embodiment, a driver integrated type in which a drive circuit is formed on a substrate is shown; however, this is not always necessary, and the driver circuit can be formed outside instead of on the substrate. The structure of the TFT using a polysilicon film as an active layer is not particularly limited, and may be a top gate type TFT or a bottom gate type TFT.

The pixel portion 1102 is formed by a plurality of pixels including a switching TFT 1111, a current control TFT 1112, and a first electrode (anode) 1113 electrically connected to a drain thereof. The current controlling TFT 1112 may be an n-channel TFT or a p-channel TFT, but when connected to an anode, it is preferably a p-channel TFT. Further, it is preferable to appropriately provide a storage capacitor (not shown). Here, among the countless arranged pixels, only the cross-sectional structure of one pixel is shown, and an example in which two TFTs are used for one pixel is shown. However, three or more TFTs are appropriately used. , May be used.

Here, since the first electrode 1113 is configured to be in direct contact with the drain of the TFT, the lower layer of the first electrode 1113 is a material layer capable of forming an ohmic contact with the drain made of silicon, and a layer containing an organic compound. It is desirable that the uppermost layer in contact is a material layer having a large work function. For example, when a three-layer structure of a titanium nitride film, a film containing aluminum as a main component, and a titanium nitride film is used, the resistance as a wiring is low, a good ohmic contact can be obtained, and the wiring can function as an anode. . The first electrode 1113 may be a single layer such as a titanium nitride film, a chromium film, a tungsten film, a Zn film, a Pt film, or a stack of three or more layers.

In addition, an insulator (referred to as a bank, a partition, a barrier, a bank, etc.) 1114 is formed at both ends of the first electrode (anode) 1113. The insulator 1114 may be formed using an organic resin film or an insulating film containing silicon. Here, an insulator having a shape illustrated in FIG. 12 is formed using a positive photosensitive acrylic resin film as the insulator 1114.

In order to improve coverage, a curved surface having a curvature is formed at an upper end or a lower end of the insulator 1114. For example, in the case where positive photosensitive acrylic is used as the material of the insulator 1114, it is preferable that only the upper end portion of the insulator 1114 have a curved surface having a radius of curvature (0.2 μm to 3 μm). As the insulator 1114, any of a negative type which becomes insoluble in an etchant by photosensitive light and a positive type which becomes soluble in an etchant by light can be used.

Alternatively, the insulator 1114 may be covered with a protective film formed of an aluminum nitride film, an aluminum nitride oxide film, a thin film containing carbon as a main component, or a silicon nitride film.

Further, a layer 1115 containing an organic compound is selectively formed over the first electrode (anode) 1113 by an evaporation method using an evaporation mask or an inkjet method. Further, a second electrode (cathode) 1116 is formed over the layer 1115 containing an organic compound. As the cathode, a material having a small work function (Al, Ag, Li, Ca, or an alloy thereof MgAg, MgIn, AlLi, CaF ₂ , or CaN) may be used. Here, as the second electrode (cathode) 1116, a thin metal film, a transparent conductive film (ITO (indium oxide tin oxide alloy), and an indium zinc oxide alloy (In ₂ O ₃ —ZnO), zinc oxide (ZnO), or the like is used. Thus, a light-emitting element 1118 including the first electrode (anode) 1113, the layer 1115 containing an organic compound, and the second electrode (cathode) 1116 is formed. Here, since the light-emitting element 1118 is an example of emitting white light, a color filter including a coloring layer 1131 and a light-blocking layer (BM) 1132 (an overcoat layer is not illustrated here for simplicity) is provided.

{Circle around (2)} By selectively forming layers containing organic compounds capable of emitting R, G, and B light, full-color display can be obtained without using a color filter.

Further, a transparent protective layer 1117 is formed to seal the light-emitting element 1118. The transparent protective layer 1117 is the transparent protective laminate described in Embodiment 1. The transparent protective laminate includes a laminate of a first inorganic insulating film, a stress relaxation film, and a second inorganic insulating film. As the first inorganic insulating film and the second inorganic insulating film, a silicon nitride film, a silicon oxide film, a silicon oxynitride film (SiNO film (composition ratio N> O) or SiON film ( A composition ratio N <O)) and a thin film containing carbon as a main component (eg, a DLC film or a CN film) can be used. These non-insulating films have a high blocking effect against moisture, but when the film thickness is large, the film stress increases and peeling and film peeling are likely to occur. However, by sandwiching the stress relaxation film between the first inorganic insulation film and the second inorganic insulation film, stress can be relaxed and moisture can be absorbed. Also, even if a minute hole (such as a pinhole) is formed in the first inorganic insulating film for some reason during film formation, the first inorganic insulating film is filled with the stress relaxation film, and the second inorganic insulating film is further provided thereon. Accordingly, it has an extremely high blocking effect against moisture and oxygen. Further, as the stress relaxation film, a material having a smaller stress than the inorganic insulating film and having a hygroscopic property is preferable. In addition, a material having a light transmitting property is desirable. Examples of the stress relaxation film include α-NPD (4,4′-bis- [N- (naphthyl) -N-phenyl-amino] biphenyl), BCP (vasocuproin), and MTDATA (4,4 ′, 4 ″-). A material film containing an organic compound such as tris (N-3-methylphenyl-N-phenyl-amino) triphenylamine) or Alq ₃ (tris-8-quinolinolatoaluminum complex) may be used. The film is hygroscopic and almost transparent when the film thickness is small, and MgO, SrO ₂ , and SrO have hygroscopicity and translucency, and can be formed into a thin film by a vapor deposition method. In this embodiment, a film formed using a silicon target in an atmosphere containing nitrogen and argon, that is, silicon nitride having a high blocking effect against impurities such as moisture and alkali metal can be used. The film may be a first inorganic insulating film or a second inorganic insulating film. Used as the inorganic insulating film, a thin film of Alq ₃ by evaporation as the stress relaxation film. Further, for the passage of light emission to the transparent protective lamination, the total thickness of the transparent protective lamination is preferably as thin as possible.

{Circle around (1)} In order to seal the light emitting element 1118, the sealing substrate 1104 is attached to the first sealing material 1105 and the second sealing material 1107 in an inert gas atmosphere. Note that an epoxy resin is preferably used for the first sealant 1105 and the second sealant 1107. Further, it is desirable that the first sealing material 1105 and the second sealing material 1107 are materials that do not transmit moisture and oxygen as much as possible.

In this embodiment, a plastic substrate made of FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), mylar, polyester, acrylic, or the like is used as a material of the sealing substrate 1104 in addition to a glass substrate or a quartz substrate. be able to. Further, after the sealing substrate 1104 is bonded using the first sealing material 1105 and the second sealing material 1107, the sealing substrate 1104 can be further sealed with a third sealing material so as to cover a side surface (exposed surface).

By enclosing the light-emitting element in the transparent protective layer 1117, the first sealant 1105, and the second sealant 1107 as described above, the light-emitting element can be completely shut off from the outside, and the organic element such as moisture or oxygen can be shut off from the outside. Invasion of a substance which promotes deterioration of the compound layer can be prevented. Therefore, a highly reliable light-emitting device can be obtained.

(4) When a transparent conductive film is used for the first electrode 1113, a double-sided light-emitting device can be manufactured.

In this embodiment, a structure in which a layer containing an organic compound is formed on an anode and a cathode which is a transparent electrode is formed on the layer containing the organic compound (hereinafter, referred to as a top emission structure) is described. Has a light-emitting element in which a layer containing an organic compound is formed on the anode and a cathode is formed on the organic compound layer, and emits light generated in the layer containing the organic compound from the anode, which is a transparent electrode, to the TFT. A structure of taking out (hereinafter, referred to as a bottom emission structure) may be adopted.

Here, FIG. 13 illustrates an example of a light-emitting device having a bottom emission structure.

Note that FIG. 13A is a top view illustrating the light-emitting device, and FIG. 13B is a cross-sectional view of FIG. 13A cut along A-A ′. Reference numeral 1201 shown by a dotted line denotes a source signal line driving circuit, 1202 denotes a pixel portion, and 1203 denotes a gate signal line driving circuit. Reference numeral 1204 denotes a sealing substrate; and 1205, a sealing material containing a gap material for maintaining a space between hermetically sealed spaces. The inside surrounded by the sealing material 1205 is an inert gas (typically, nitrogen). ). A small amount of moisture is removed from the inner space surrounded by the sealant 1205 by the desiccant 1207, and the space is sufficiently dry.

Reference numeral 1208 denotes a wiring for transmitting a signal input to the source signal line driver circuit 1201 and the gate signal line driver circuit 1203, and a video signal or a clock signal from an FPC (flexible printed circuit) 1209 serving as an external input terminal. receive.

Next, a cross-sectional structure will be described with reference to FIG. A driver circuit and a pixel portion are formed over the substrate 1210; here, a source signal line driver circuit 1201 and a pixel portion 1202 are illustrated as the driver circuits. Note that as the source signal line driver circuit 1201, a CMOS circuit in which an n-channel TFT 1223 and a p-channel TFT 1224 are combined is formed.

The pixel portion 1202 is formed by a plurality of pixels including a switching TFT 1211, a current control TFT 1212, and a first electrode (anode) 1213 made of a transparent conductive film electrically connected to a drain thereof.

Here, the first electrode 1213 is formed so as to partially overlap with the connection electrode, and the first electrode 1213 is electrically connected to the drain region of the TFT via the connection electrode. The first electrode 1213 is a conductive film having transparency and a large work function (ITO (indium oxide-tin oxide alloy), indium oxide-zinc oxide alloy (In ₂ O ₃ —ZnO), zinc oxide (ZnO), or the like). ) Is preferably used.

In addition, an insulator (referred to as a bank, a partition, a barrier, a bank, etc.) 1214 is formed at both ends of the first electrode (anode) 1213. In order to improve coverage, a curved surface having a curvature is formed at an upper end or a lower end of the insulator 1214. Alternatively, the insulator 1214 may be covered with a protective film formed using an aluminum nitride film, an aluminum nitride oxide film, a thin film containing carbon as a main component, or a silicon nitride film.

Further, a layer 1215 containing an organic compound is selectively formed over the first electrode (anode) 1213 by an evaporation method using an evaporation mask or an inkjet method. Further, a second electrode (cathode) 1216 is formed over the layer 1215 containing an organic compound. As the cathode, a material having a small work function (Al, Ag, Li, Ca, or an alloy thereof MgAg, MgIn, AlLi, CaF ₂ , or CaN) may be used. In this manner, a light-emitting element 1218 including the first electrode (anode) 1213, the layer 1215 containing an organic compound, and the second electrode (cathode) 1216 is formed. The light emitting element 1218 emits light in the direction of the arrow shown in FIG. Here, the light-emitting element 1218 is one of light-emitting elements that can emit monochromatic light of R, G, or B. Three light-emitting elements each including a layer containing an organic compound that can emit light of R, G, or B are selectively formed. Light emitting elements are used in full color.

Further, a protective layer 1217 is formed to seal the light-emitting element 1218. As the protective layer 1217, the protective layer described in Embodiment Mode 2 is used. The protective laminate is composed of a laminate of a first inorganic insulating film, a stress relaxation film, and a second inorganic insulating film.

(4) In addition, a sealing substrate 1204 is attached to the light-emitting element 1218 with a sealant 1205 in an inert gas atmosphere. A recess formed beforehand by a sandblast method or the like is formed in the sealing substrate 1204, and a desiccant 1207 is attached to the recess. Note that an epoxy resin is preferably used for the sealant 1205. Further, it is preferable that the sealant 1205 be a material that does not transmit moisture or oxygen as much as possible.

In this embodiment, as a material for forming the sealing substrate 1204 having the concave portion, in addition to a metal substrate, a glass substrate, and a quartz substrate, FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), mylar, polyester, acrylic, or the like Can be used. Moreover, it is also possible to seal with a metal can with a desiccant adhered inside.

本 Further, this embodiment can be freely combined with any one of Embodiment Modes 1 to 4, Embodiment 1, and Embodiment 2.

In this embodiment, a cross-sectional structure of one pixel, particularly, a connection of a light emitting element and a TFT and a shape of a partition wall arranged between pixels will be described.

In FIG. 14A, 40 is a substrate, 41 is a partition (also called a bank), 42 is an insulating film, 43 is a first electrode (anode), 44 is a layer containing an organic compound, and 45 is a second electrode ( The cathode 46 is a TFT.

In the TFT 46, 46a is a channel forming region, 46b and 46c are source or drain regions, 46d is a gate electrode, and 46e and 46f are source or drain electrodes. Although a top gate type TFT is shown here, the present invention is not particularly limited, and may be an inverted stagger type TFT or a forward stagger type TFT. Reference numeral 46f denotes an electrode which connects to the TFT 46 by partially contacting and overlapping the first electrode 43.

FIG. 14B shows a cross-sectional structure which is partly different from that of FIG.

In FIG. 14B, the manner in which the first electrode overlaps with the electrode differs from the structure in FIG. 14A. After patterning the first electrode, the electrode is formed so as to partially overlap. Is connected to the TFT.

FIG. 14C illustrates a cross-sectional structure which is partly different from that in FIG.

In FIG. 14C, one layer of an interlayer insulating film is further provided, and the first electrode is connected to a TFT electrode through a contact hole.

Further, the cross-sectional shape of the partition wall 41 may be a tapered shape as shown in FIG. It is obtained by exposing a resist using a photolithography method and then etching a non-photosensitive organic resin or an inorganic insulating film.

If a positive photosensitive organic resin is used, a shape as shown in FIG. 14E and a shape having a curved surface at the upper end can be obtained.

When a negative photosensitive resin is used, a shape as shown in FIG. 14F and a shape having curved surfaces at the upper end and the lower end can be obtained.

This embodiment can be freely combined with any one of Embodiment Modes 1 to 4 and Embodiments 1 to 3.

Various modules (active matrix EL modules) can be completed by implementing the present invention. That is, by implementing the present invention, all electronic devices incorporating them are completed.

Such electronic devices include video cameras, digital cameras, head-mounted displays (goggle-type displays), car navigation systems, projectors, car stereos, personal computers, personal digital assistants (mobile computers, mobile phones, e-books, etc.). No. Examples of these are shown in FIGS.

FIG. 15A illustrates a personal computer, which includes a main body 2001, an image input unit 2002, a display unit 2003, a keyboard 2004, and the like.

FIG. 15B illustrates a video camera, which includes a main body 2101, a display portion 2102, an audio input portion 2103, operation switches 2104, a battery 2105, an image receiving portion 2106, and the like.

FIG. 15C illustrates a game machine, which includes a main body 2201, operation switches 2204, a display portion 2205, and the like.

FIG. 15D illustrates a player using a recording medium on which a program is recorded (hereinafter, referred to as a recording medium), and includes a main body 2401, a display portion 2402, a speaker portion 2403, a recording medium 2404, operation switches 2405, and the like. The player can use a DVD (Digital Versatile Disc), a CD, or the like as a recording medium, and can enjoy music, movies, games, and the Internet.

FIG. 15E illustrates a digital camera, which includes a main body 2501, a display portion 2502, an eyepiece portion 2503, operation switches 2504, an image receiving portion (not shown), and the like.

FIG. 16A illustrates a mobile phone, which includes a main body 2901, an audio output portion 2902, an audio input portion 2903, a display portion 2904, operation switches 2905, an antenna 2906, an image input portion (CCD, image sensor, and the like) 2907, and the like.

FIG. 16B illustrates a portable book (e-book) including a main body 3001, display portions 3002 and 3003, a storage medium 3004, operation switches 3005, an antenna 3006, and the like.

FIG. 16C illustrates a display, which includes a main body 3101, a support base 3102, a display portion 3103, and the like.

Incidentally, the display shown in FIG. 16C is of a small, medium or large size, for example, a screen size of 5 to 20 inches. In addition, in order to form a display portion having such a size, it is preferable to use a substrate having a side of 1 m and mass-produce it by performing multi-paneling.

As described above, the applicable range of the present invention is extremely wide, and the present invention can be applied to electronic device manufacturing methods in all fields. Further, the electronic device of this embodiment can be realized by using any combination of Embodiment Modes 1 to 4 and Embodiments 1 to 4.

In the electronic device described in Embodiment 5, a module in which an IC including a controller, a power supply circuit, and the like is mounted on a panel in which a light emitting element is sealed is mounted. Both the module and the panel correspond to one mode of a light-emitting device. In this embodiment, a specific configuration of the module will be described.

FIG. 17A is an external view of a module in which a controller 1801 and a power supply circuit 1802 are mounted on a panel 1800. The panel 1800 includes a pixel portion 1803 in which a light-emitting element is provided for each pixel, a scan line driver circuit 1804 for selecting a pixel included in the pixel portion 1803, and a signal line driver circuit for supplying a video signal to the selected pixel. 1805 are provided.

A printed circuit board 1806 is provided with a controller 1801 and a power supply circuit 1802. Various signals and a power supply voltage output from the controller 1801 or the power supply circuit 1802 are supplied to the pixel portion 1803 of the panel 1800 via the FPC 1807, a scan line driver circuit, and the like. 1804, which is supplied to the signal line driving circuit 1805.

The power supply voltage and various signals to the printed circuit board 1806 are supplied via an interface (I / F) unit 1808 in which a plurality of input terminals are arranged.

In the present embodiment, the printed circuit board 1806 is mounted on the panel 1800 using the FPC, but is not necessarily limited to this configuration. The controller 1801 and the power supply circuit 1802 may be directly mounted on the panel 1800 using a COG (Chip on Glass) method.

In addition, in the printed circuit board 1806, noise may occur in a power supply voltage or a signal, or a rise of a signal may be slowed down due to a capacitance formed between wirings and resistances of the wirings themselves. Therefore, various elements such as a capacitor and a buffer may be provided on the printed circuit board 1806 to prevent noise on the power supply voltage and the signal and to prevent the signal from rising slowly.

FIG. 17B is a block diagram showing the structure of the printed circuit board 1806. The various signals and the power supply voltage supplied to the interface 1808 are supplied to the controller 1801 and the power supply voltage 1802.

The controller 1801 includes an A / D converter 1809, a phase locked loop (PLL) 1810, a control signal generator 1811, and SRAMs (Static Random Access Memory) 1812 and 1813. Although an SRAM is used in this embodiment, an SDRAM or a DRAM (Dynamic Random Access Memory) may be used instead of the SRAM if data can be written or read at high speed.

The video signal supplied via the interface 1808 is subjected to parallel-serial conversion in the A / D converter 1809, and is input to the control signal generation unit 1811 as video signals corresponding to each of R, G, and B colors. Also, an A / D converter 1809 generates an Hsync signal, a Vsync signal, a clock signal CLK, and an AC voltage (AC Cont) based on various signals supplied via the interface 1808, and inputs the generated signals to the control signal generation unit 1811. Be done

The phase locked loop 1810 has a function of matching the frequency of various signals supplied via the interface 1808 with the phase of the operation frequency of the control signal generation unit 1811. The operation frequency of the control signal generation unit 1811 is not necessarily the same as the frequency of various signals supplied via the interface 1808, but the operation frequency of the control signal generation unit 1811 is adjusted in the phase locked loop 1810 so as to be synchronized with each other. .

The video signal input to the control signal generation unit 1811 is once written and held in the SRAMs 1812 and 1813. The control signal generation unit 1811 reads out video signals corresponding to all the pixels, one bit at a time, from among the video signals of all bits held in the SRAM 1812 and supplies them to the signal line drive circuit 1805 of the panel 1800.

{Circle around (1)} The control signal generation unit 1811 supplies information on the period during which the light emitting element emits light for each bit to the scan line driving circuit 1804 of the panel 1800.

The power supply circuit 1802 supplies a predetermined power supply voltage to the signal line driver circuit 1805, the scan line driver circuit 1804, and the pixel portion 1803 of the panel 1800.

Next, the detailed structure of the power supply circuit 1802 will be described with reference to FIG. The power supply circuit 1802 of this embodiment includes a switching regulator 1854 using four switching regulator controls 1860, and a series regulator 1855.

ス イ ッ チ ン グ Generally, switching regulators are smaller and lighter than series regulators, and can perform not only step-down but also step-up and positive / negative inversion. On the other hand, the series regulator is used only for step-down, but has a higher output voltage accuracy than the switching regulator, and hardly generates ripples and noises. In the power supply circuit 1802 of this embodiment, both are used in combination.

A switching regulator 1854 shown in FIG. 18 includes a switching regulator control (SWR) 1860, an attenuator (ATT) 1861, a transformer (T) 1862, an inductor (L) 1863, and a reference power supply (Vref) 1864. , An oscillator circuit (OSC) 1865, a diode 1866, a bipolar transistor 1867, a variable resistor 1868, and a capacitor 1869.

(4) The voltage of an external Li-ion battery (3.6 V) or the like is converted by the switching regulator 1854, so that a power supply voltage applied to the cathode and a power supply voltage supplied to the switching regulator 1854 are generated.

The series regulator 1855 includes a bandgap circuit (BG) 1870, an amplifier 1871, an operational amplifier 1872, a current source 1873, a variable resistor 1874, and a bipolar transistor 1875. Is supplied.

The series regulator 1855 uses a power supply voltage generated by the switching regulator 1854, and based on a constant voltage generated by the band gap circuit 1870, a wiring (current supply line) for supplying a current to the anode of the light emitting element of each color. ) Is generated.

The current source 1873 is used in a driving method in which a current of a video signal is written to a pixel. In this case, the current generated by the current source 1873 is supplied to the signal line driving circuit 1805 of the panel 1800. Note that in the case of a driving method in which a voltage of a video signal is written to a pixel, the current source 1873 is not necessarily provided.

Note that the switching regulator, OSC, amplifier, and operational amplifier can be formed using TFTs.

In addition, this embodiment can be freely combined with any one of Embodiment Modes 1 to 4 and Embodiments 1 to 5.

In this embodiment, an example in which the vapor deposition holder is moved vertically or parallel to one side of the substrate with the longitudinal direction and the moving direction being the same will be described with reference to FIG.

In FIG. 19A, reference numeral 1912 denotes a holder moving path, reference numeral 1913 denotes a large substrate, and reference numeral 1917 denotes a deposition holder. By making the longitudinal direction and the moving direction of the vapor deposition holder the same, the regions (linear) to be vapor deposited are finely overlapped, and the film thickness over the entire substrate is made uniform. Further, the evaporation method shown in FIG. 19A is suitable for a case where the same material is prepared for all containers and a thick film is obtained in a short time.

Also, an even number of crucibles are prepared, as shown in an example in FIG. 19B, so that the respective vaporization centers in the vapor deposition source holder 1917 cross each other, and the vaporization materials are made finer by bumping each other. You may try. In this case, the crossing point is located in the space between the mask (and the substrate) and the container.

This embodiment can be freely combined with any one of Embodiment Modes 1 to 3 and Embodiments 1 to 5.

FIG. 20A illustrates an embodiment of a circuit diagram of a pixel, and FIG. 20B illustrates a cross-sectional view of a TFT used for a pixel portion. Reference numeral 901 corresponds to a switching TFT for controlling input of a video signal to a pixel, and reference numeral 902 corresponds to a driving TFT for controlling supply of a current to the light emitting element 903. Specifically, the drain current of the driving TFT 902 is controlled according to the potential of the video signal input to the pixel via the switching TFT 901, and the drain current is supplied to the light-emitting element 903. Note that reference numeral 904 corresponds to a capacitor for holding a gate-source voltage (hereinafter, referred to as a gate voltage) of the driving TFT when the switching TFT 901 is off, and is not necessarily provided.

20A, specifically, the gate electrode of the switching TFT 901 is connected to the scanning line G, one of the source region and the drain region is connected to the signal line S, and the other is the gate of the driving TFT 902. It is connected to the. One of a source region and a drain region of the driving TFT 902 is connected to the power supply line V, and the other is connected to the pixel electrode 905 of the light emitting element 903. One of two electrodes of the capacitor 904 is connected to the gate electrode of the driving TFT 902, and the other is connected to the power supply line V.

In FIGS. 20A and 20B, a structure in which the switching TFT 901 is connected in series and a plurality of TFTs connected to a gate electrode share the first semiconductor film is used. Having a multi-gate structure. With the multi-gate structure, the off-state current of the switching TFT 901 can be reduced. Specifically, in FIGS. 20A and 20B, the switching TFT 901 has a configuration in which two TFTs are connected in series. However, three or more TFTs are connected in series, and A multi-gate structure in which gate electrodes are connected may be used. The switching TFT does not necessarily have to have a multi-gate structure, and may be a normal single-gate TFT having a single gate electrode and a single channel formation region.

(4) The TFTs 901 and 902 are of the inverted stagger type (bottom gate type) and of the channel etch type. The active layer of the TFT uses an amorphous semiconductor or a semi-amorphous semiconductor. If the active layer of the TFT is made of a semi-amorphous semiconductor, not only the pixel portion but also a driving circuit can be formed on the same substrate. The n-type is more suitable for the driving circuit because the mobility is higher than that of the p-type. However, each TFT may be either n-type or p-type. When using TFTs of any polarity, it is desirable that all TFTs formed on the same substrate have the same polarity in order to reduce the number of steps.

In the driving TFT 902 in the pixel portion, a gate electrode 920 formed over the substrate 900, a gate insulating film 911 covering the gate electrode 920, and the gate electrode 920 overlapped with the gate insulating film 911 interposed therebetween. A first semiconductor film 922 formed of a semi-amorphous semiconductor film. Further, the TFT 902 includes a pair of second semiconductor films 923 functioning as a source region or a drain region, and a third semiconductor film 924 provided between the first semiconductor film 922 and the second semiconductor film 923. are doing.

{Circle around (2)} The second semiconductor film 923 is formed of an amorphous semiconductor film or a semi-amorphous semiconductor film, and an impurity imparting one conductivity type is added to the semiconductor film. The pair of second semiconductor films 923 are provided to face each other with a channel formation region in the first semiconductor film 922 interposed therebetween.

The third semiconductor film 924 is formed of an amorphous semiconductor film or a semi-amorphous semiconductor film, has the same conductivity type as the second semiconductor film 923, and has a higher conductivity than the second semiconductor film 923. Is low. Since the third semiconductor film 924 functions as an LDD region, an electric field concentrated on an end portion of the second semiconductor film 923 functioning as a drain region can be reduced and a hot carrier effect can be prevented. Although the third semiconductor film 924 is not necessarily provided, by providing the third semiconductor film 924, the withstand voltage of the TFT can be increased and the reliability can be improved. Note that in the case where the TFT 902 is an n-type, an n-type conductivity type can be obtained without adding an impurity imparting n-type when the third semiconductor film 924 is formed. Therefore, when the TFT 902 is an n-type, it is not always necessary to add an n-type impurity to the third semiconductor film 924. Note that an impurity imparting p-type conductivity is added to the first semiconductor film in which a channel is formed, and the conductivity type is controlled so as to approach the I-type as much as possible.

配線 Further, the wiring 925 is formed to be in contact with the pair of third semiconductor films 924.

{Circle around (1)} A first passivation film 940 and a second passivation film 941 made of an insulating film are formed so as to cover the TFTs 901 and 902 and the wiring 925. The passivation film covering the TFTs 901 and 902 is not limited to two layers, and may be a single layer or three or more layers. For example, the first passivation film 940 can be formed using silicon nitride, and the second passivation film 941 can be formed using silicon oxide. By forming the passivation film using silicon nitride or silicon nitride oxide, the TFTs 901 and 902 can be prevented from being deteriorated by the influence of moisture, oxygen, or the like.

(4) The TFTs 901 and 902 and the wiring 925 are covered with a flat interlayer insulating film 905. The flat interlayer insulating film 905 may be a film obtained by performing a planarization process on an insulating film formed by a PCVD method or a SiOx film containing an alkyl group obtained by a coating method using a siloxane-based polymer.

Then, a contact hole reaching the wiring 925 is formed, and a pixel electrode 930 electrically connected to one of the wirings 925 is formed.

(4) Then, an insulator 929 (referred to as a bank, a partition, a barrier, a bank, or the like) covering an end portion of the pixel electrode 930 is formed. As the insulator 929, an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, or the like), a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist, or benzocyclobutene), or a mixture thereof is used. Although lamination or the like can be used, a photosensitive organic resin covered with a silicon nitride film is used here. For example, when a positive photosensitive acrylic is used as the material of the organic resin, it is preferable that only the upper end of the insulator has a curved surface having a radius of curvature. Further, as the insulator, either a negative type which becomes insoluble in an etchant by photosensitive light or a positive type which becomes soluble in an etchant by light can be used. Alternatively, a SiOx film containing an alkyl group obtained by a coating method using a siloxane-based polymer may be used as the insulator 929.

Then, an electroluminescent layer 931 is formed so as to be in contact with the pixel electrode 930. Note that the electroluminescent layer 931 has a stacked structure, and at least one layer is selectively formed by the evaporation apparatus in FIG. With a vapor deposition apparatus (one example of which is shown in FIG. 1) suitable for a mass production process using a large-area substrate, loss of a vapor deposition material can be suppressed and manufacturing cost of the entire light-emitting device can be reduced.

Then, a counter electrode 932 is formed so as to be in contact with the electroluminescent layer 931. Note that the light-emitting element 903 has an anode and a cathode, one of which is used as a pixel electrode and the other is used as a counter electrode. In the case where the TFT 902 connected to the light-emitting element 903 is an n-channel TFT as illustrated in FIG. 20A, it is preferable that the pixel electrode 930 be a cathode and the counter electrode 932 be an anode.

In the case where a transparent conductive film is used as the pixel electrode 930, light emitted from the electroluminescent layer 931 passes through the substrate 900 and is emitted in the direction of the arrow in the figure.

In this embodiment, since the third semiconductor film including the channel formation region is formed of a semi-amorphous semiconductor, it is possible to obtain a TFT having higher mobility than a TFT using an amorphous semiconductor film. Accordingly, the driver circuit and the pixel portion can be formed over the same substrate.

Finally, the light emitting element 903 is sealed with a sealing substrate or a sealing can so as not to be exposed to the outside air, but is not shown here.

This embodiment can be freely combined with Embodiment Mode 1 or Embodiment 5.

In this embodiment, FIG. 21 shows an example in which the driving TFT is an n-channel amorphous TFT which is a channel stop type.

1001 corresponds to a switching TFT for controlling input of a video signal to a pixel, and 1002 corresponds to a driving TFT for controlling supply of current to the light emitting element 1003. Specifically, the drain current of the driving TFT 1002 is controlled according to the potential of the video signal input to the pixel via the switching TFT 1001, and the drain current is supplied to the light emitting element 1003.

The TFTs 1001 and 1002 are of an inverted stagger type (bottom gate type) and of a channel stop type. The active layer of the TFT uses an amorphous semiconductor.

In the driving TFT 1002 in the pixel portion, the gate electrode 1020 formed over the substrate 1000, the gate insulating film 1011 covering the gate electrode 1020, and the gate electrode 1020 overlapped with the gate insulating film 1011 interposed therebetween. A first semiconductor film 1022 formed of an amorphous semiconductor film. Further, the TFT 1002 includes a pair of second semiconductor films 1023 functioning as a source region or a drain region, and a third semiconductor film 1024 provided between the first semiconductor film 1022 and the second semiconductor film 1023. are doing. In addition, a channel stopper 1010 made of an insulator is formed over the first semiconductor film 1022.

{Circle around (2)} The second semiconductor film 1023 is formed of an amorphous semiconductor film, and an impurity imparting n-type is added to the semiconductor film. The pair of second semiconductor films 1023 are provided to face each other with a channel formation region in the first semiconductor film 1022 interposed therebetween.

The third semiconductor film 1024 is formed using an amorphous semiconductor film, has the same conductivity type as the second semiconductor film 1023, and has lower conductivity than the second semiconductor film 1023. Has characteristics. The third semiconductor film 1024 functions as an LDD region

(4) A passivation film 1040 made of an insulating film is formed so as to cover the TFTs 1001 and 1002 and the wiring 1025.

(4) The TFTs 1001 and 1002 and the wiring 1025 are covered with a flat interlayer insulating film.

Then, a contact hole reaching the wiring 1025 is formed, and a pixel electrode 1030 electrically connected to one of the wirings 1025 is formed. The pixel electrode 1030 is formed by stacking a reflective metal layer (Ag or Al) or a transparent conductive film.

Then, an insulator 1029 (referred to as a bank, a partition, a barrier, a bank, or the like) which covers an end portion of the pixel electrode 1030 is formed.

Then, an electroluminescent layer 1031 is formed so as to be in contact with the pixel electrode 1030. Note that the electroluminescent layer 1031 has a stacked structure, and at least one layer is selectively formed by the evaporation apparatus in FIG. With a vapor deposition apparatus (one example of which is shown in FIG. 1) suitable for a mass production process using a large-area substrate, loss of a vapor deposition material can be suppressed and manufacturing cost of the entire light-emitting device can be reduced.

Then, a counter electrode 1032 is formed so as to be in contact with the electroluminescent layer 1031. In this embodiment, since the TFT 1002 is an n-channel TFT, it is preferable that the pixel electrode 1030 be a cathode and the counter electrode 1032 be an anode.

(4) Since a transparent conductive film is used as the counter electrode 1032, light emission from the electroluminescent layer 1031 is emitted in the direction of the arrow in the figure.

Finally, the light emitting element 1003 is finally sealed with a sealing substrate or a sealing can so as not to be exposed to the outside air, but is not shown here.

Note that this embodiment can be freely combined with Embodiment Mode 1 or Embodiment 5.

The present invention can provide a manufacturing system capable of transporting a container in which a deposition material is sealed, a film thickness monitor, and the like from an installation room connected to a deposition apparatus without exposing the container to the atmosphere. According to the present invention, the evaporation material can be easily handled and contamination of the evaporation material with impurities can be avoided. Such a manufacturing system makes it possible to install the container enclosed by the material manufacturer in the vapor deposition device without touching the atmosphere, so that the vapor deposition material can prevent oxygen and water from adhering, and further increase It is possible to respond to high purity.

In addition, when an amorphous semiconductor film or a semi-amorphous semiconductor film is used for an active layer of a TFT, a uniform film thickness can be obtained over the entire surface of a large-area substrate, and a vapor deposition apparatus that suppresses loss of vapor deposition material is provided. In addition, the manufacturing cost of the light emitting device can be significantly reduced.

It is a top view schematic diagram of the vapor deposition device of the present invention. (Embodiment 1) It is the cross section which expanded the vicinity of the substrate. (Embodiment 1) FIG. 3 is a diagram illustrating a configuration of a substrate holding unit. (Embodiment 2) It is the upper surface and cross-sectional schematic diagram of the vapor deposition apparatus of this invention. (Embodiment 3) FIG. 3 is a diagram illustrating a moving direction of a deposition holder. (Embodiment 4) FIG. 3 is a diagram illustrating an evaporation mask. (Embodiment 1) FIG. 3 is a diagram illustrating an evaporation mask. (Embodiment 1) It is a figure which shows the form of the container which conveys. FIG. 3 is a diagram illustrating an evaporation source holder. It is a figure showing a manufacturing device. (Example 1) FIG. 3 is a diagram illustrating an element structure. (Example 2) It is a figure showing a light emitting device. (Example 3) It is a figure showing a light emitting device. (Example 3) FIG. 3 is a diagram illustrating connection between a TFT and a first electrode and a partition shape. (Example 4) FIG. 13 illustrates an example of an electronic device. (Example 5) FIG. 13 illustrates an example of an electronic device. (Example 5) It is a figure showing a module. (Example 6) It is a figure showing a block diagram. (Example 6) FIG. 3 is a diagram illustrating a moving direction of a deposition holder. (Example 7) 3A and 3B are a circuit diagram and a cross-sectional view of a light emitting device. (Example 8) FIG. 3 is a diagram illustrating a cross section of a light emitting device. (Example 9)

Explanation of reference numerals

11: film forming chamber 12: substrate holding means 13: large substrate

Claims (11)

A manufacturing apparatus having a load chamber, a transfer chamber connected to the load chamber, and a plurality of film formation chambers connected to the transfer chamber, and an installation chamber connected to the film formation chamber,
The plurality of film forming chambers are connected to a first evacuation processing chamber that evacuates the film forming chamber, and an alignment unit that positions a mask and a substrate, a substrate holding unit, and a plurality of rectangular vapor deposition units. Source holder, and means for moving the deposition source holder, respectively,
A container in which a deposition material disposed in the longitudinal direction is sealed in the deposition source holder, and a unit for heating the container,
The installation chamber is connected to a second evacuation processing chamber that evacuates the installation chamber, and the installation chamber heats a container, and transfers the container to the evaporation source holder in the film formation chamber. And a production device. 2. The vapor deposition apparatus according to claim 1, wherein the substrate holding means overlaps with a region serving as a terminal portion, a cutting region, or an edge of the substrate with a mask interposed therebetween. 3. The manufacturing apparatus according to claim 1, wherein the substrate holding means and the mask are bonded or welded. 4. The device according to claim 1, wherein the means for moving the deposition source holder has a mechanism for moving the deposition source holder in the X-axis direction at a certain pitch and moving the deposition source holder in the Y-axis direction at a certain pitch. A manufacturing apparatus characterized in that: (5) The manufacturing apparatus according to any one of (1) to (4), wherein a plurality of containers are arranged at equal intervals in the rectangular evaporation source holder. A manufacturing apparatus having a load chamber, a transfer chamber connected to the load chamber, and a plurality of film formation chambers connected to the transfer chamber, and an installation chamber connected to the film formation chamber,
The plurality of film forming chambers are connected to a vacuum evacuation processing chamber that evacuates the film forming chamber, and aligns the mask and the substrate with each other, moves the rectangular evaporation source holder, and moves the evaporation source holder. Means to cause
The vapor deposition source holder has a container in which a vapor deposition material arranged in the longitudinal direction is sealed, and a unit for heating the container,
The manufacturing apparatus, wherein the moving unit moves a rectangular evaporation source holder whose longitudinal direction is oblique to one side of the substrate in the X direction or the Y direction of the substrate. A manufacturing apparatus having a load chamber, a transfer chamber connected to the load chamber, and a plurality of film formation chambers connected to the transfer chamber, and an installation chamber connected to the film formation chamber,
The plurality of film forming chambers are connected to a vacuum evacuation processing chamber that evacuates the film forming chamber, and aligns the mask and the substrate with each other, moves the rectangular evaporation source holder, and moves the evaporation source holder. Means to cause
The vapor deposition source holder has a container in which a vapor deposition material arranged in the longitudinal direction is sealed, and a unit for heating the container,
A manufacturing apparatus, wherein one side of a substrate is installed obliquely to a moving direction of the rectangular evaporation holder. A material containing an organic compound is vapor-deposited from a vapor deposition source disposed opposite to a substrate provided with the TFT, and a film containing the organic compound is formed over a first electrode provided over the substrate; A method for manufacturing a light-emitting device in which a second electrode is formed over a film containing
Forming a semiconductor film over a substrate having an insulating surface;
Scanning and irradiating the semiconductor film with laser light,
Forming a TFT using the semiconductor film as an active layer;
Forming a first electrode connected to the TFT;
Forming a film containing an organic compound on the first electrode by moving a rectangular evaporation source holder in a direction different from the scanning direction of the laser light;
Forming a second electrode over the film containing the organic compound. A material containing an organic compound is vapor-deposited from a vapor deposition source placed opposite to a substrate provided with the TFT and the first electrode, so that a film containing the organic compound is formed over the first electrode. A method for manufacturing a light-emitting device in which a second electrode is formed over a film including:
Forming a semiconductor film over a substrate having an insulating surface;
Scanning and irradiating the semiconductor film with laser light,
Forming a TFT using the semiconductor film as an active layer;
Forming a first electrode connected to the TFT;
Forming a film containing an organic compound on the first electrode by moving a rectangular deposition source holder in a direction different from a direction perpendicular to the scanning direction of the laser light,
Forming a second electrode over the film containing the organic compound. According to claim 8 or claim 9, wherein the laser light, YAG laser of a continuous oscillation or pulse oscillation, YVO ₄ laser, YLF laser, YAlO ₃ laser, a glass laser, ruby laser, alexandrite laser, Ti: selected from sapphire laser A method for manufacturing a light-emitting device, wherein the light-emitting device is laser light from one or a plurality of types. 10. The light-emitting device according to claim 8, wherein the laser light is laser light of one or more types selected from a continuous wave or pulsed excimer laser, an Ar laser, and a Kr laser. Method.

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