JP2013001927A - Discharge device and thin film-forming apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a discharge device, capable of reducing the time required to raise the temperature of a thin film material while securing satisfactory uniformity of film thickness, and to provide a thin film-forming apparatus.SOLUTION: The discharge device includes: a container body 13 formed from a heat conductive material; a plurality of receiving holes formed in the container body 13; an evaporation container 6 disposed within each receiving hole, the evaporation container containing a thin film material 4; and a heating device 7 for heating the evaporation container 6. The heating device 7 is located between the outer circumferential surface of the evaporation container 6 and the inner circumferential surface of the receiving hole and is disposed to surround the outer circumferential surface of the evaporation container 6. When the heating device 7 heats the evaporation container 6 with the thin film material 4 being stored in the evaporation container 6, vapor is generated from the thin film material 4 stored in each evaporation container 6 and released through an opening of each evaporation container 6. Since a plurality of evaporation containers 6 are independently heated, the thin film material 4 can be rapidly heated. The temperature difference among the plurality of evaporation containers 6 is minimized due to the heat conduction of the container body 13, and the amount of the vapor being released is uniformed.

Description

  The present invention relates to a discharge apparatus and a thin film forming apparatus for generating a vapor of a thin film material in a vacuum atmosphere, and more particularly to an apparatus for generating a vapor of an inorganic material having a high evaporation temperature.

  Conventionally, film formation of organic thin films and inorganic thin films used in organic EL displays, organic EL lighting devices, organic devices, etc., generates a vapor by heating an organic material or an inorganic material, and uses the vapor as a film formation target. It is done by making it reach.

The code | symbol 101 of FIG. 12 has shown the thin film formation apparatus of the prior art.
The thin film forming apparatus 101 includes a vacuum chamber 108, a linear evaporation source 103 disposed on the bottom wall inside the vacuum chamber 108, and a substrate holder 150 disposed on the ceiling side inside the vacuum chamber 108. .

  The linear evaporation source 103 has a rectangular parallelepiped container 153, and the container 153 is disposed on the bottom wall inside the vacuum chamber 108. A thin film material 104 is accommodated in the container 153, and the container 153 is surrounded by a heater 105 that heats the container 153.

  When the evacuation system 109 connected to the vacuum chamber 108 is activated and the inside of the vacuum chamber 108 is maintained in a vacuum atmosphere, the power source 156 connected to the heater 105 is activated to cause the heater 105 to generate heat. The container 153 is heated to increase the temperature, the thin film material 104 inside the container 153 is heated by heat conduction, the vapor of the thin film material 104 is generated inside the container 153, and the vapor is filled inside the container 153.

  As shown in FIG. 12, a spout 117 is provided on the surface of the container 153 on the ceiling side, and the steam filled in the container 153 is a jet provided on a surface directed vertically upward of the container 153. It is discharged from the outlet 117 to the outside of the container 153.

  Above the spout 117 of the container 153, the substrate 110, which is a film formation target, is held by the substrate holder 150 with the surface to be deposited facing downward, and the vapor reaches the substrate 110. Then, a thin film is formed on the substrate 110. The substrate 110 is moved together with the substrate holder 150 in the horizontal direction to change the relative position between the jet port 117 and the substrate 110, and a thin film is formed on the entire surface of the substrate 110 on which the film is to be formed.

  When the container 153 is heated by the heater 105 to raise the temperature of the thin film material 104, the amount of heat supplied by the heater 105 per unit time is larger than the amount of heat necessary to generate the vapor of the thin film material 104. There is a problem that it is small and it takes time to raise the temperature of the thin film material 104, and it is difficult to raise the temperature to a temperature necessary for generating steam. Moreover, since it is necessary to maintain the temperature of the heater 105 at a temperature higher than the temperature at which the thin film material 104 generates steam, there is a problem that the life of the heater 105 is short. Furthermore, the temperature of the thin film material 104 near the center of the container 153 is lower than the temperature of the thin film material 104 near the inner surface of the container 153, and the temperature of the thin film material 104 becomes non-uniform. There was also a problem that the amount of vapor generated by the thin film material 104 was less than the amount of vapor generated by the thin film material 104 near the inner surface of the container 153. This problem is particularly noticeable when the thin film material 104 is an inorganic material. When the thin film material 104 is an organic material, the thin film material 104 may be decomposed due to uneven temperature.

  FIG. 14 shows a thin film forming apparatus 111 having a point evaporation source 113 that has been conventionally used. The point evaporation source 113 disposed on the bottom wall inside the vacuum chamber 108 has an evaporation container 106, the thin film material 104 is accommodated inside the evaporation container 106, and the outer peripheral side surface of the evaporation container 106 is A heater 105 for heating the evaporation container 106 is attached.

  When the power source 156 connected to the heater 105 is activated, the evaporation container 106 is heated and heated by the heater 105, and the thin film material 104 accommodated in the evaporation container 106 is heated by heat conduction, and the evaporation container 106 is heated. The vapor of the thin film material 104 is generated inside the vapor 106, the vapor is discharged from the opening of the evaporation container 106, reaches the substrate 110 located above the opening of the evaporation container 106, and a thin film is formed. A thin film is formed while changing the relative position between the opening of the evaporation container 106 and the substrate 110.

  In this point evaporation source 113, the amount of vapor of the thin film material 104 is small compared to the linear evaporation source 103 described above, the efficiency of forming a thin film is poor, and the production efficiency is poor. In addition, as the area of the substrate 110 increases, there is a problem that the uniformity of the film thickness deteriorates. If a mechanism for rotating the substrate 110 is provided in order to make the film thickness uniform, there is a disadvantage that costs increase.

JP 2005-050747 A JP-A-2005-060757

  The present invention was created in order to solve the above-mentioned disadvantages of the prior art, and an object of the present invention is to provide a discharge device and a thin film that can shorten the time taken to raise the temperature of the thin film material and have good film thickness uniformity. It is to provide a forming apparatus.

In order to solve the above-described problems, the present invention provides a container body made of a heat conductive material, a plurality of receiving holes formed in the container body, and disposed inside each of the receiving holes. And a heating device for heating the evaporation container, the heating device being located between the outer peripheral side surface of the evaporation container and the inner peripheral side surface of the receiving hole, When the heating apparatus heats the evaporation container in a state where the outer peripheral side surface is disposed and the thin film material is stored in the evaporation container, steam is generated from the thin film material stored in each of the evaporation containers, It is the discharge | release apparatus discharged | emitted from the opening of each said evaporation container.
The present invention is a discharge device, the heating device is a heater, arranged in contact with both the outer peripheral side surface of the evaporation container and the inner peripheral side surface of the containing hole, when the heating device is heated, The evaporation container and the container body are discharge devices that are heated by heat conduction.
The present invention is a discharge device, wherein an auxiliary heating device for a container main body that contacts the container main body and heats the container main body by heat conduction is in close contact with the container main body and contacts the side surface of the container main body. Is a discharge device provided around
The present invention is a discharge device having a lid member provided with a plurality of evaporation ports through which the vapor passes.
The present invention is a discharge device, wherein the vapor is discharged from an opening of each evaporation container in a space surrounded by the lid member.
The present invention is a discharge device, in which the lid member is provided at each opening of the evaporation container, and the vapor that has passed through the evaporation port of the cover member is discharged.
The present invention includes a vacuum chamber and the discharge device, and the discharge device is a thin film forming device disposed in the vacuum chamber.
The present invention is a thin film forming apparatus, wherein a plurality of the discharge devices are arranged in the vacuum chamber along one reference direction, and each of the discharge devices has a temperature of an evaporation container included in each of the discharge devices. Is a thin film forming apparatus configured to be controlled separately for each discharge apparatus.
The present invention is a thin film forming apparatus, wherein two adjacent discharge devices are arranged on different straight lines among two straight lines parallel to the reference direction, and end portions of two adjacent discharge devices In the thin film forming apparatus, the distance in the reference direction between the centers of the two adjacent evaporation ports including the evaporation port is the same.

  According to the discharge device of the present invention, the plurality of evaporation containers containing the thin film material are individually heated, so that the temperature of the thin film material can be quickly raised. Due to the heat conduction of the container body, the temperature difference between the plurality of evaporation containers is reduced, the amount of vapor released is uniform, and a thin film with a uniform film thickness can be formed.

(A) Internal side view of the thin film forming apparatus of the first example of the present invention, (b) Internal enlarged side view of the evaporation source of the discharge apparatus of the first example, (c) of the auxiliary heating device of the discharge apparatus of the first example Expanded side view of the side AA cut line sectional view of the discharge device of the first example Plan view of the discharge device of the first example Schematic diagram showing the electrical connection relationship of each component of the discharge device of the first example (A) Internal side view of thin film forming apparatus of second example of the present invention, (b) Internal enlarged side view of evaporation source of second example of discharge apparatus, (c) Container body auxiliary of second example of discharge apparatus Enlarged sectional view of the side of the heating device Plan view of the second example discharge device The internal side view of the thin film formation apparatus of the 3rd example of this invention Plan view of the discharge device of the third example The internal side view of the thin film formation apparatus of the 4th example of this invention The internal top view of the thin film formation apparatus of the 4th example of this invention The schematic diagram which shows the electrical connection relation of each component of the thin film formation apparatus of a 4th example Internal side view of a thin film forming apparatus equipped with a conventional linear evaporation source Plan view of a conventional linear evaporation source Internal side view of a thin film forming apparatus with a conventional point evaporation source

<Structure of thin film forming apparatus of first example>
Embodiments of the present invention will be described below with reference to the drawings. The code | symbol 1a of Fig.1 (a) has shown the thin film formation apparatus of the 1st example of this invention.
The thin film forming apparatus 1a of the first example includes a vacuum chamber 8, a discharge device 3a disposed on the bottom wall side inside the vacuum chamber 8, and a substrate holder 50 disposed on the ceiling side inside the vacuum chamber 8. ing.

Emitting device 3a includes an integral container body 13 made of a thermally conductive material has a plurality of evaporation sources 24a ₁ ~24a _n, and a lid member 53a.
The container body 13 is made of a heat conductive material such as metal or graphite, and is formed in a rectangular parallelepiped shape here.

  A heat radiation auxiliary plate 25 is disposed on the bottom wall inside the vacuum chamber 8, and a column 35 that supports the container main body 13 is provided on the heat radiation auxiliary plate 25, and the container main body 13 has one surface vertically upward. In an oriented state, it is arranged at the upper end of the column 35. Here, the heat radiation auxiliary plate 25 is made of a heat insulating material, faces the surface facing downward of the container body 13, and heat radiation of the surface facing downward of the container body 13 when the container body 13 is heated. The amount of heat of the container body 13 is absorbed. The heat radiation auxiliary plate 25 is not limited to a configuration made of a heat insulating material, and may be cooled.

  An auxiliary heating device 64 is disposed outside the container body 13. The auxiliary heating device 64 has a cylindrical tube portion and a plate portion that covers one end of the tube portion, the inner peripheral side surface of the tube portion surrounds the outer peripheral side surface of the container main body 13, and the plate portion surface is the container main body 13. It arrange | positions in the position which faces and separates from the ceiling surface of, and is supported by the support member not shown.

FIG. 1C is an enlarged cross-sectional view of the side surface of the auxiliary heating device 64. The auxiliary heating device 64 includes an auxiliary filler 64 ₂ made of an insulating material, and an auxiliary resistance heating element 64 ₁ arranged inside the auxiliary filler 64 ₂ . When power is supplied to the auxiliary resistance heating element 64 ₁ to generate heat, the auxiliary filler 64 ₂ is heated by heat conduction.

  The outer peripheral side surface of the container main body 13 is in close contact with the inner peripheral side surface of the cylindrical portion of the auxiliary heating device 64. When the auxiliary heating device 64 generates heat, the container main body 13 is heated by heat conduction. Of the auxiliary heating device 64, the portion that is in close contact with the outer peripheral side surface of the container body 13 is the container body auxiliary heating device 5 a that heats the container body 13, and the other portion is the lid auxiliary heating device 63. The upper part of the ceiling surface of the container body 13 is covered with a lid auxiliary heating device 63.

  The lid member 53a has a cylindrical tube portion and a plate portion that covers one end of the tube portion. The lid member 53a is disposed at a position where the inner peripheral side surface of the cylindrical portion surrounds the outer peripheral side surface of the cylindrical portion of the auxiliary heating device 64 and the plate portion surface faces the rear surface of the plate portion of the auxiliary heating device 64. It is supported by. The inner surface of the lid member 53a is in close contact with the outer surface of the auxiliary heating device 64. When the lid auxiliary heating device 63 of the auxiliary heating device 64 generates heat, the lid member 53a is heated by heat conduction.

  On the outside of the lid member 53a, a heat radiation prevention body 23 made of a heat insulating material such as ceramics is disposed so as to surround the outer surface of the lid member 53a. Even if the temperature of the lid member 53a rises, the heat dissipation preventive body 23 prevents the heat of the lid member 53a from being transmitted to members outside the discharge device 3a, for example, the vacuum chamber 8 and the substrate holder 50.

Figure 1 (a), the structure of each evaporation source 24a ₁ ~24a _n is the same as each other, it will be described as a representative in the evaporation source code 24a _1.
FIG. 1B is an enlarged side view of the inside of the evaporation source 24a ₁ .

The evaporation source 24a ₁ includes an accommodation hole 14 provided in the ceiling surface of the container body 13, an evaporation container 6 in which a thin film material is accommodated, and a heating device 7 that heats the evaporation container 6.
The evaporation container 6 is disposed inside the accommodation hole 14, and the heating device 7 is disposed between the outer peripheral side surface of the evaporation container 6 and the inner peripheral side surface of the accommodation hole 14, and surrounds the outer peripheral side surface of the evaporation container 6. It is out.

Here, the heating device 7 is a heater and is in contact with both the outer peripheral side surface of the evaporation container 6 and the inner peripheral side surface of the accommodation hole 14.
The heating device 7 includes a filling 7 ₂ made of an insulating material and a resistance heating element 7 ₁ disposed inside the filling 7 ₂ , and power is supplied to the resistance heating element 7 _1. When heating, fillers 7 ₂ by thermal conduction is adapted to heating.

FIG. 2 is a cross-sectional view taken along line AA of the discharge device 3a.
A plurality of receiving holes 14 are provided on the ceiling surface of the container body 13. Here, the accommodation holes 14 are arranged on two straight lines parallel to the longitudinal direction 91 of the ceiling surface of the container body 13, and the accommodation holes 14 are arranged at equal intervals on each straight line and are provided on different straight lines. The distance between two adjacent receiving holes 14 is equal. The evaporating containers 6 positioned inside the respective housing holes 14 are arranged so that the density of the evaporating containers 6 is constant along the longitudinal direction 91 of the ceiling surface of the container main body 13.

Figure 1 (a), the the vacuum chamber 8 external and power source 56 are provided, with each evaporation source 24a ₁ ~24a _n heating device 7, the container body for the auxiliary heating device 5a, respectively, vacuum It is electrically connected to a power source 56 via a controller 20 provided outside the tank 8. When power from the power source 56 is supplied, the evaporation sources 24a ₁ ~24a _n heating device 7 and the container body for the auxiliary heating device 5a of the is adapted to heat generation, respectively.

  The lid auxiliary heating device 63 is electrically connected to the power source 56 via both the container main body auxiliary heating device 5a and the controller 20, and when the container main body auxiliary heating device 5a generates heat, the container main body auxiliary heating device 63a. The lid auxiliary heating device 63 also generates heat together with the heating device 5a.

The amount of power supplied from the power source 56 can be increased or decreased by the controller 20. When increasing or decreasing the power supplied to each of the respective evaporation sources 24a ₁ ~24a _n heating device 7 and the container body for the auxiliary heating device 5a of the respective heat generation amount increases or decreases.

Each evaporation source 24a ₁ ~24a _n, the heating device 7 is provided for each evaporation container 6, when the heating device 7 generates heat, the evaporation container 6 in contact with the heating device 7 is heated by heat conduction, the temperature Be warmed. Since the evaporation container 6 of the evaporation source 24a ₁ ~24a _n is individually heated by the heating device 7 in contact, is rapidly heated as compared with conventional linear evaporation source 103 (see FIG. 12), and a high temperature The temperature is raised.

Each evaporation source 24a ₁ ~24a _n heating device 7 is in contact also with the inner peripheral side surface of the receiving hole 14, heating the vaporization container 6 by the respective evaporation sources 24a ₁ ~24a _n heating device 7, the heating container body 13 in contact with the device 7 is also heated together, other heating device 7 in contact with the container body 13 by heat conduction of the container body 13 is heated, the temperature of the evaporation container 6 of a plurality of evaporation sources 24a ₁ ~24a _n The difference becomes smaller.

The heating, the container body for the auxiliary heating device 5a generates heat, by thermal conduction, the container body 13 is heated, then the evaporation source 24a ₁ ~24a _n heating device 7 in contact with the container body 13 by heat conduction Then, the evaporation container 6 in contact with the heating device 7 is heated to a temperature higher than that in the case where the container body auxiliary heating device 5a does not generate heat.

Reference numerals 4 in FIGS. 1A and 1B and FIG. 2 denote thin film materials which are thin film materials. The thin film material 4 is accommodated in each evaporation container 6.
Figure 1 (a), the state in which the thin film material 4 is accommodated in the evaporation container 6 of the evaporation source 24a ₁ ~24a _n, each evaporation container 6 is heated, when heated, by heat conduction Then, the temperature of the thin film material 4 rises, and the vapor of the thin film material 4 is generated inside the evaporation container 6, the vapor is released from the opening of the evaporation container 6, and the discharged vapor is a lid auxiliary heating device above the container body 13. Fill the space covered with 63.

  When the lid auxiliary heating device 63 generates heat in a state where the space covered with the lid auxiliary heating device 63 is filled with steam, the filled vapor comes into contact with the lid auxiliary heating device 63 and is heated, heated up, and steamed. , The number of collisions between the steam and the auxiliary lid heating device 63 increases, and the density of the vapor filled in the space covered by the auxiliary lid heating device 63 becomes uniform.

  A plurality of evaporation ports 17 penetrating the plate portion in the thickness direction are formed in the plate portion of the lid member 53a, and the lid auxiliary heating device 63 and the heat radiation preventing body 23 do not block the evaporation ports 17, respectively. In this way, a hole is provided, and the vapor filled in the space covered with the lid auxiliary heating device 63 is discharged from the evaporation port 17. The evaporation port 17 is directed vertically upward, and when the vapor is discharged from the evaporation port 17, the evaporation port 17 is directed vertically upward.

FIG. 3 is a plan view of the discharge device 3a.
Here, the evaporation ports 17 are arranged in parallel to the longitudinal direction 91 of the ceiling surface of the container body 13. The opening area of the evaporation port 17 located near one end and the other end in the longitudinal direction 91 is larger than the opening area of the evaporation port 17 located near the center in the longitudinal direction 91, and the evaporation ports near the one end and the other end. From FIG. 17, the amount of vapor released is larger than the amount of vapor released from the evaporation port 17 near the center.
The density of the evaporation port 17 is made larger near one end and the other end than near the center in the longitudinal direction 91, and the amount of vapor released from the evaporation port 17 near one end and the other end is larger than that near the center. It may be made to become.

  Referring to FIG. 1A, a substrate holder 50 holds a substrate 10 that is a film formation target. The substrate holder 50 is movable in a horizontal direction perpendicular to the arrangement of the evaporation ports 17 (here, a direction perpendicular to the longitudinal direction 91 of the ceiling surface of the container body 13). When 50 moves while holding the substrate 10, the substrate 10 and the discharge device 3a move relative to each other in the moving direction while maintaining a constant distance between the substrate 10 and the discharge device 3a.

When the substrate holder 50 moves from the start point to the end point in the movement direction, the substrate 10 starts moving from a start position that is not directly above the evaporation port 17, passes directly above the evaporation port 17, and is The movement ends at an end position that is not above.
The length of the evaporation ports 17 of the substrate 10 in the parallel direction is shorter than the distance between the centers of the evaporation ports 17 at one end and the other end of the evaporation ports 17. And a position directly above the evaporation port 17 at the other end.

  Here, the substrate 10 is moved in the moving direction while the discharge device 3a is stationary, and the substrate 10 and the discharge device 3a are relatively moved. However, the substrate 10 is stationary. The discharge device 3a may be moved in the moving direction so that the substrate 10 and the discharge device 3a move relative to each other.

  The lid member 53a is located between the surface on which the thin film material 4 evaporates and the substrate 10, and the vapor generated inside the evaporation container 6 is released from the evaporation port 17 provided in the lid member 53a. When the substrate 10 is positioned directly above the evaporation port 17, it reaches the substrate 10 and a thin film is formed.

  When the vapor is released from the evaporation port 17 located near one end or the other end in the longitudinal direction 91, the vapor reaches near one end or the other end in the longitudinal direction 91 of the substrate 10 and is located near the center of the longitudinal direction 91. When the vapor is released from the evaporation port 17, the substrate 10 reaches the vicinity of the center in the longitudinal direction 91. The number of evaporation ports 17 that can reach the vapor at one end and the other end in the longitudinal direction 91 of the substrate 10 is smaller than the number of evaporation ports 17 that can reach near the center, but one end compared to the evaporation ports 17 near the center. When a large amount of vapor is released from the evaporation port 17 at the other end, the uniformity of the film thickness is improved.

  When the substrate 10 moves from the start position to the end position while the vapor is released from the evaporation port 17, the entire surface of the substrate 10 passes right above the evaporation port 17, and the vapor reaches the entire surface of the substrate 10. A thin film is formed on the entire surface of the substrate 10. When the substrate 10 is moved at a predetermined speed, a thin film having a uniform film thickness is formed in the moving direction.

  A film thickness sensor 51 is provided above the evaporation port 17 located at one end of the arrangement of the evaporation ports 17 so as not to prevent vapor from reaching the substrate 10. The film thickness sensor 51 is connected to the controller 20, and the amount of vapor deposited on the film thickness sensor 51 per unit time is measured by the controller 20 and recorded.

Further, a temperature measuring sensor 38 for measuring the temperature of the evaporation container 6 is connected to the evaporation container 6 of _one evaporation source 24a ₁ . The temperature measurement sensor 38 is connected to the controller 20, and the temperature of the evaporation container 6 is measured by the controller 20 and recorded.

FIG. 4 is a schematic diagram showing an electrical connection relationship of each component of the discharge device 3a.
The controller 20, based on the measurement result of the measurement results or the temperature measurement sensor 38 of the film thickness sensor 51 increases or decreases the amount of power supplied to the heating device 7 of the evaporation source 24a ₁ ~24a _n, each evaporation the evaporation container 6 sources 24a ₁ ~24a _n to the desired temperature, the amount of vapor released is configured to be a desired value.

Incidentally, each of the temperature measuring sensor 38 in the evaporation container 6 of the evaporation source 24a ₁ ~24a _n is connected, the controller 20, based on the measurement results of the respective temperature measurement sensor 38, a plurality of evaporation sources 24a ₁ ~24a _n You may comprise so that the emitted-heat amount of the heating apparatus 7 may be controlled separately, respectively. It can be set to a desired temperature more quickly evaporating vessel 6 of the evaporation source 24a ₁ ~24a _n.

In this invention, with reference to Fig.1 (a), the heat | fever amount of the container main body 13 is absorbed by the radiation auxiliary plate 25, and the container main body 13 becomes easy to cool compared with the case where the heat radiation auxiliary plate 25 is not provided. Yes. Therefore, the temperature of the evaporation container 6 of the evaporation source 24a ₁ ~24a _n tends to a desired value, which is the amount of vapor released easily to a desired value.

Further, the evaporation container 6 of the evaporation source 24a ₁ ~24a _n is detachably attached from the heating device 7, after formation of the thin film, a new evaporation vessel the spent evaporation container 6, the thin film material 4 is accommodated 6, the time for filling the thin film material 4 is shortened, and the productivity is improved.

Although in the above description the heating device 7 of the evaporation source 24a ₁ ~24a _n was heater, it may be induction heating device. When a heater is used, the cost is low, and when an induction heating device is used, there is high responsiveness (heating efficiency is good).

  Referring to FIG. 1A, a vacuum exhaust system 9 is connected to the vacuum chamber 8. When the evacuation system 9 is activated, the inside of the vacuum chamber 8 is evacuated, and a thin film can be formed in a predetermined vacuum atmosphere.

<How to use the thin film forming apparatus of the first example>
Next, the process of forming a thin film using this thin film forming apparatus 1a will be described.
First, the evacuation system 9 is activated to evacuate the vacuum chamber 8 to form a vacuum atmosphere in the vacuum chamber 8. Thereafter, evacuation by the evacuation system 9 is continued, and the vacuum atmosphere in the vacuum chamber 8 is maintained.

  While maintaining the vacuum atmosphere in the vacuum chamber 8, the substrate 10 as a film formation target is carried into the vacuum chamber 8, and held on the substrate holder 50 with the surface to be deposited facing downward, 50 is placed at the starting point of the moving direction.

Each evaporation source 24a ₁ power is supplied from power source 56 to ～24A _n heating device 7 and the container body for the auxiliary heating device 5a of the respective evaporation sources 24a ₁ ~24a _n heating device 7 and the container body for auxiliary heater 5a The lid auxiliary heating device 63 also generates heat together with the container body auxiliary heating device 5a.

Evaporating vessel 6 is heated by the heating device 7 of the evaporation source 24a ₁ ~24a _n, when the temperature is raised, the thin-film material 4 housed inside the evaporation container 6 by heat conduction are heated, the inside of the evaporation container 6 Vapor that is vapor of the thin film material 4 is generated, and the vapor is released from the opening of the evaporation container 6.

In the present invention, the evaporation container 6 of the evaporation source 24a ₁ ~24a _n, are heated separately by the heating device 7 in contact with each evaporation container 6, a thin film material 4 housed inside the evaporation container 6, The temperature is quickly raised as compared to the conventional linear evaporation source 103 (see FIG. 12), and the temperature is raised to a temperature higher than that of the conventional linear evaporation source 103.

Further, the heating device 7 is heated, the container body 13 in contact with the heating device 7 is also heated, other heating device 7 is also heated by thermal conduction integral of the container body 13, a plurality of evaporation sources 24a ₁ ~24a _n The temperature difference of the thin film material 4 accommodated in the evaporation container 6 becomes small, and the amount of vapor released becomes uniform.

The vapor discharged from the opening of the evaporation container 6 fills the space covered with the lid auxiliary heating device 63 and is discharged from the evaporation port 17.
The lid auxiliary heating device 63 generates heat, and the vapor filled in the space covered with the lid auxiliary heating device 63 is heated by being brought into contact with the lid auxiliary heating device 63, and the steam speed is increased. The number of collisions between the steam and the lid auxiliary heating device 63 increases, the density of the vapor filled in the space covered by the lid auxiliary heating device 63 becomes uniform, and the amount of steam released from the evaporation port 17 is stabilized. .

Evaporation container 6 of the evaporation source 24a ₁ ~24a _n is maintained at a predetermined temperature, where the amount of steam to be deposited per unit time in the film thickness sensor 51 is stabilized, and start moving the substrate holder 50 together with the substrate 10 The thin film is formed by allowing the vapor to reach the surface of the substrate 10 while passing the substrate 10 directly above the evaporation port 17 in the moving direction.

  After the substrate 10 passes the position directly above the evaporation port 17 and the substrate holder 50 reaches the end point in the moving direction and the formation of the thin film is completed, the thin film is formed while maintaining the vacuum atmosphere in the vacuum chamber 8. The substrate 10 is carried out of the vacuum chamber 8. Next, a new substrate 10 on which no thin film is formed is carried into the vacuum chamber 8 and held by the substrate holder 50. The substrate holder 50 is moved to the starting point in the moving direction through a path that does not cross the position directly above the evaporation port 17, and the above-described film forming process is repeated.

<Structure of thin film forming apparatus of second example>
Above, the upper ceiling surface of the container body 13 is covered by one of the lid member 53a, a plurality of evaporation sources 24a ₁ ~24a _n of evaporation container 6 release device 3a covered by the same lid member 53a (hereinafter, Although the thin film forming apparatus 1a of the first example provided with the first evaporation source is described, the present invention is not limited to this.

  Reference numeral 1b in FIG. 5 (a) represents a second example of the thin film forming apparatus including the second example of the discharge device 3b of the present invention. Of the configuration of the thin film forming apparatus 1b of the second example, the same parts as those of the thin film forming apparatus 1a of the first example are denoted by the same reference numerals and description thereof is omitted.

Emitting device 3b of the second example, instead of the first example evaporation source 24a ₁ ~24a _n and the lid member 53a of the release device 3a and a plurality of evaporation sources 24b ₁ ~24b _n and a plurality of cover members 53b ₁ ~53b _n .
The structures of the respective evaporation sources 24b _{1 to} 24b _n are the same as each other, and will be described with reference to the evaporation source 24b ₁ .

FIG. 5B is an enlarged internal side view of the evaporation source 24b ₁ . The structure of the evaporation source 24b _{1 is the same as} the structure of the evaporation source 24a ₁ of the thin film forming apparatus 1a of the first example, and a description thereof will be omitted. The lid member 53b ₁ is attached to the opening of the evaporation container 6.

FIG. 6 is a plan view of the discharge device 3b of the second example.
Here, the planar shape of the evaporation ports 17 of the lid members 53b _{1 to} 53b _n is rectangular, and the sizes of all the evaporation ports 17 are equal to each other.
The lid members 53b _{1 to} 53b _n include second lid members 53b ₁ , 53b ₁₁ , 53b _n , and 53b that are attached to the evaporation containers 6 at one end and the other end in a row of the evaporation containers 6 parallel to the longitudinal direction 91. _1n and first lid members 53b _{2 to} 53b _1n-1 attached to the other evaporation containers 6 are included.

In each of the lid members 53b _{1 to} 53b _n , the evaporation ports 17 are provided at equal intervals along the longitudinal direction 91 of the ceiling surface of the container body 13, and the area density of the evaporation ports 17 with respect to the longitudinal direction 91 is constant. It is supposed to be. Therefore, the vapor is released at a constant density with respect to the longitudinal direction 91.

Here, three evaporation ports 17 are provided in the first lid members 53b _{2 to} 53b _1n-1 , and the evaporation ports are provided in the second lid members 53b ₁ , 53b ₁₁ , 53b _n and 53b _1n. Six 17 are provided. The second lid members 53b ₁ , 53b ₁₁ , 53b _n , 53b _1n have a larger number of evaporation ports 17 than the first lid members 53b _{2 to} 53b _1n-1, and the total opening area of the evaporation ports 17 is large. A lot of steam is released.

Referring to FIG. 5 (a), in the second example of the discharge device 3b as well, the lid members 53b _{1 to} 53b _n are formed on the surface on which the thin film material 4 evaporates, the substrate 10, and the discharge device 3a of the first example. The vapor generated inside the evaporation container 6 is discharged from the evaporation port 17 provided in the lid members 53b _{1 to} 53b _n and reaches the substrate 10.

The length in the longitudinal direction 91 of the ceiling surface of the container body 13 in the substrate 10 is longer than the distance between the centers of the second lid member 53b ₁ at one end and the second lid member 53b _1n at the other end in the longitudinal direction 91. When the substrate 10 is short and passes the upper position of the discharge device 3b of the second example in the moving direction, the substrate 10 has a second lid member 53b1 at _one end in the longitudinal direction 91 and a second lid member 53b at the other end. Pass the upper position between _1n .

The substrate 10 passes through the vertical upper positions of the first lid members 53b _{2 to} 53 _1n-1 , but does not pass through the vertical upper positions of the second lid members 53b ₁ , 53b ₁₁ , 53b _n , 53b _1n. When the vapor is discharged from the evaporation ports 17 of the first lid members 53b _{2 to} 53 _1n−1 , the vapor reaches near the center in the direction perpendicular to the moving direction of the substrate 10 (longitudinal direction 91). Is released from the evaporation port 17 of the second lid member 53b ₁ , 53b ₁₁ , 53b _n , 53b _1n , it reaches one end in the direction perpendicular to the moving direction of the substrate 10 (longitudinal direction 91) and the vicinity of the other end. To do.

Film vapor, from the second cover member _{53b 1, 53b 11, 53b n} , 53b 1n the evaporation port 17, when it is often released in comparison with the first cover member 53b ₂ ~53 _1n-1, which is formed Is uniform with respect to the longitudinal direction 91.

Here, the evaporation port 17 is rectangular, but is not limited thereto, and may be circular, for example. Here, the sizes of the evaporation ports 17 are all the same, and the second lid members 53b ₁ , 53b ₁₁ , 53b _n , and 53b _1n are larger than the first lid members 53b _{2 to} 53 _1n−1 . Although the evaporation port 17 is provided to increase the total opening area, the evaporation ports of the second lid members 53b ₁ , 53b ₁₁ , 53b _n , and 53b _1n are larger than the first lid members 53b _{2 to} 53 _1n-1. The size of 17 may be increased so that the total opening area is increased, and a large amount of vapor may be released.

With reference to Fig.5 (a), the discharge | emission apparatus 3b of a 2nd example has the auxiliary | assistant heating apparatus 5b for cylindrical container main bodies instead of the auxiliary | assistant heating apparatus 64 of the discharge | release apparatus 3a of a 1st example.
The container body auxiliary heating device 5b is disposed at a position where the inner peripheral surface surrounds the outer peripheral side surface of the container main body 13 so that the container main body 13 is located inside, and is supported by a support member (not shown). The outer peripheral side surface of 13 and the inner peripheral side surface of the container body auxiliary heating device 5b are in close contact with each other.

FIG.5 (c) is an expanded sectional view of the side surface of the auxiliary heating apparatus 5b for container main bodies. Here, the auxiliary heating device 5b for the container body is composed of an auxiliary filling 5b ₂ made of an insulating material and an auxiliary resistance heating element 5b ₁ disposed inside the auxiliary filling 5b ₂ . When electric power is supplied to the auxiliary resistance heating element 5b ₁ to generate heat, the auxiliary filling 5b ₂ is heated by heat conduction, and the container body 13 is heated.

  Referring to FIGS. 5A and 5B, in the discharge device 3 b of the second example, the heat dissipation preventive body 23 surrounds the outer surface of the container body auxiliary heating device 5 b and accommodates the ceiling surface of the container body 13. It is provided so as to surround portions other than the holes 14, and when the container body 13 is heated, heat is prevented from being conducted through the heat radiation prevention body 23, and the substrate 10 and the vacuum chamber 8 are heated by heat radiation. Is prevented.

<Structure of thin film forming apparatus of third example>
The code | symbol 1c of FIG. 7 has shown the thin film formation apparatus of the 3rd example provided with the discharge | release apparatus 3c of the 3rd example of this invention. Of the configuration of the thin film forming apparatus 1c of the third example, the same parts as those of the thin film forming apparatus 1b of the second example are denoted by the same reference numerals, and description thereof is omitted.

Release device 3c of the third example, the first embodiment, release device 3a of the second example, the evaporation sources 24a ₁ ~24a _n of 3b, instead of 24b ₁ ~24b _n, a plurality of evaporation sources 24c ₁ ~24c _n has a lid member 53a, 53b ₁ ~53b _n is not provided, steam is released from the opening of the evaporation container 6 of the evaporation source 24c ₁ ~24c _n, so as to reach the substrate 10 ing.

FIG. 8 is a plan view of the discharge device 3c of the third example.
The evaporation unit portion 24c ₁ ～24C _n has one end and the second evaporation source 24c on the other end ₁ in the longitudinal direction 91, 24c _11, 24c _n, and 24c _1n, first evaporation source 24c ₂ ～24C near the center _1n-1 is included.

7, the length in the longitudinal direction 91 of the ceiling surface of the container body 13 in the substrate 10 is longer than the distance between the centers of the evaporation containers 6 of the second evaporation sources 24c ₁ and 24c _1n at one end and the other end. When the substrate 10 is short and passes above the discharge device 3c in the moving direction, the substrate 10 has the evaporation container 6 of the second evaporation source 24c ₁ at _one end and the evaporation container 6 of the second evaporation source 24c _{1n at} the other end. It is adapted to pass over the position between, but passes through the vertical position above the first evaporation source 24c ₂ ~24c _1n-1 of the evaporation container 6, a second evaporation source 24c _1, 24c ₁₁ , 24c _n and 24c _1n are not allowed to pass vertically above the evaporation container 6.

The evaporation containers 6 of the first evaporation sources 24c _{2 to} 24c _1n-1 are arranged with their openings directed vertically upward, and the evaporation containers 6 of the second evaporation sources 24c ₁ , 24c ₁₁ , 24c _n and 24c _1n. the opening is directed vertically arranged while being directed in a direction that forms a predetermined angle relative to the upper, i.e. each aperture substrate 10 of the evaporation container 6 of the evaporation source 24c ₁ ~24c _n.

When the vapor is released from the opening of the evaporation container 6 of the first evaporation sources 24c _{2 to} 24c _1n−1 , the vapor reaches near the center of the substrate 10 in the direction perpendicular to the moving direction (longitudinal direction 91). When the vapor is released from the opening of the evaporation container 6 of the second evaporation sources 24c ₁ , 24c ₁₁ , 24c _n , 24c _1n , the vapor is in a direction perpendicular to the moving direction (longitudinal direction 91) of the substrate 10. ) Near one end and the other end.

The evaporation containers 6 of the second evaporation sources 24c ₁ , 24c ₁₁ , 24c _n , 24c _1n are arranged with the opening directed toward the substrate 10, as compared with the case where the opening is not directed toward the substrate 10. A lot of vapor reaches the substrate 10, the uniformity of the thickness of the thin film is improved, and the utilization efficiency of the thin film material is increased.

<Structure of thin film forming apparatus of fourth example>
The thin film forming apparatuses 1a to 1c of the first to third examples described above have one first to third discharging apparatuses 3a to 3c, respectively, but the first to third discharging apparatuses 3a to 3c are included. A configuration having a plurality of these is also included in the present invention.

FIG. 9 is an internal side view of a fourth example thin film forming apparatus 1d having three first example discharge devices 3a, and FIG. 10 is an internal plan view thereof. In the configuration of the thin film forming apparatus 1d of the fourth example, the same parts as those of the thin film forming apparatus 1a of the first example are denoted by the same reference numerals and description thereof is omitted.
The thin film forming apparatus 1d of the fourth example has first to third release apparatuses 3a _{1 to} 3a ₃ . The structures of the first to third discharge devices 3a _{1 to} 3a ₃ are the same as the structure of the discharge device 3a of the first example, and the description thereof is omitted.

Referring to FIG. 10, the first to third discharge devices 3 a _{1 to 3 a 3} are arranged in this order along one horizontal straight line (reference direction) in the vacuum chamber 8. The longitudinal direction 91 of the 13 ceiling surfaces is oriented in a direction parallel to the one straight line.

When the distance between the centers of the evaporation ports 17 provided in the lid member 53a of one discharge device 3a _{1 to} 3a ₃ is called an evaporation port interval D, the length in the longitudinal direction 91 of the discharge devices 3a _{1 to} 3a ₃ is the evaporation. If the discharge devices 3a _{1 to} 3a ₃ are arranged in a line on the same straight line parallel to the longitudinal direction 91, they are formed longer than the length obtained by adding the number of the evaporation ports 17 to the mouth interval D. The evaporation ports 17 located at the ends of the two discharge devices 3a _{1 to} 3a ₃ are separated from each other by a distance in which the distance in the longitudinal direction 91 between the centers is larger than the evaporation port interval D.

In the present invention, two adjacent discharge devices 3a _{1 to} 3a ₃ are arranged on mutually different straight lines out of two straight lines parallel to the longitudinal direction 91 (that is, each discharge device 3a _{1 to} 3a ₃ is arranged in the longitudinal direction 91. along the zigzag arranged), the two release apparatus 3a ₁ to 3 a ₃ adjacent range occupied longitudinally 91 partially overlap, the ends of the two release apparatus 3a ₁ to 3 a ₃ adjacent the evaporation port 17 The distance in the longitudinal direction 91 between the centers is equal to the evaporation port interval D, and includes the evaporation ports 17 at the ends of the two adjacent discharge devices 3a _{1 to} 3a ₃ , between the centers of the two adjacent evaporation ports 17. The distances in the longitudinal direction 91 are the same. Therefore, the vapor is discharged in a uniform discharge amount with respect to the longitudinal direction 91 including between the two adjacent discharge devices 3a _{1 to} 3a ₃ .

Each discharge device 3a ₁ , 3a ₂ , 3a ₃ includes a controller 20 ₁ , 20 ₂ , 20 ₃ , a power source 56 ₁ , 56 ₂ , 56 _3, and a temperature measurement sensor 38 ₁ , 38 for each discharge device. _2, 38 _3, are provided and the film thickness sensor 51 _1, 51 _2, 51 _3.

That is, the first release apparatus 3a _1, the first controller 20 ₁ and the first power source 56 ₁ and the first temperature measuring sensor 38 ₁ and ₁ first thickness sensor 51 is provided, the second The discharge device 3a ₂ is provided with a second controller 20 ₂ , a second power source 56 ₂ , a second temperature measurement sensor 38 _2, and a second film thickness sensor 51 _2, and the third discharge device 3 a. ₃ includes a third controller 20 ₃ and the third power source 56 ₃ and the third temperature measuring sensor 38 ₃ and the third film thickness sensor 51 ₃ is provided.

Referring to FIG. 10, first to third film thickness sensors 51 _{1 to} 51 ₃ prevent vapors emitted from the first to third release devices 3a _{1 to} 3a ₃ from reaching the substrate 10, respectively. as no is disposed above the first to third discharge device 3a ₁ to 3 a ₃ of the evaporation port 17, the amount of vapor released from the first to third discharge device 3a ₁ to 3 a ₃ Each ratio can be measured.

Here, a cylindrical deposition plate 99 is provided so as to surround the first to third release devices 3a _{1 to} 3a ₃ , and the first to third film thickness sensors 51 _{1 to} 51 ₃ are deposited. It is attached to and supported by the end of the plate 99.

FIG. 11 is a schematic diagram showing the electrical connection relationship of each component of the fourth example thin film forming apparatus 1d. Here, the first release apparatus 3a ₁ has evaporation source and container body auxiliary heater numerals 5a ₁ of the code 24a ₁₁ ~24a _1L, second emission device 3a ₂ are code 24a ₂₁ ~24a _2M An evaporation source and a container body auxiliary heating device 5a ₂ are included, and the third discharge device 3a ₃ has an evaporation source 24a _{31 to} 24a _3N and a container body auxiliary heating device 5a ₃ . .

The first controller 20 ₁ is based on the first thickness sensor 51 _first measurement result or the first temperature measuring sensor 38 ₁ measurements, first the evaporation source emitting device 3a ₁ 24a ₁₁ ~24a The amount of electric power supplied to the _{1 L} heating device 7 and the container body auxiliary heating device 5a ₁ is increased or decreased, the evaporation sources 6 of the evaporation sources 24a _{11 to} 24a _1L are set to desired temperatures, The amount is configured to be a desired value.

Second and third controllers 20 _2, 20 ₃ as well, in the same manner as the first controller 20 _1, the second, third emission device 3a _2, each evaporation source 24a ₂₁ of 3a ₃ ~24a _2M, 24a ₃₁ Each of the ˜24a _3N evaporation containers 6 can be brought to a desired temperature, and the amount of vapor released can be brought to a desired value.

That is, the temperature of the evaporation containers 6 of the first to third discharge devices 3a _{1 to} 3a ₃ is individually controlled by different controllers for each discharge device, and the amount of vapor released is adjusted to a desired value for each discharge device. Therefore, when a thin film is formed on the substrate 10, the uniformity of the film thickness can be further improved.

In the above description, the thin film forming apparatus 1d of the fourth example has the three discharge devices 3a _{1 to} 3a ₃ , but the number of the discharge devices is not limited to three and may be two or more. Further, the present invention is not limited to the configuration having a plurality of discharge devices 3a of the first example, and the configuration having a plurality of discharge devices 3b of the second example is also included in the present invention.

1a, 1b, 1c, 1d ...... thin film forming apparatus _{3a, 3b, 3c, 3a 1} ~3a 3 ...... emitting device 4 ...... thin film materials 5a, 5b, 5a ₁ ~5a ₃ for ...... container body auxiliary heater 6 …… Evaporation container 7 …… Heating device 8 …… Vacuum tank 13 …… Container body 14 …… Housing hole 17 …… Evaporation port 53a, 53b _{1 to} 53b _n …… Cover member

Claims (9)

A container body made of a thermally conductive material;
A plurality of receiving holes formed in the container body;
An evaporation container that is disposed inside each of the storage holes and stores a thin film material;
A heating device for heating the evaporation container;
Have
The heating device is located between the outer peripheral side surface of the evaporation container and the inner peripheral side surface of the accommodation hole, and is disposed so as to surround the outer peripheral side surface of the evaporation container,
When the heating device heats the evaporation container in a state where the thin film material is accommodated in the evaporation container, vapor is generated from the thin film material accommodated in each evaporation container and is released from the opening of each evaporation container. Extrusion device.   The heating device is a heater and is disposed in contact with both the outer peripheral side surface of the evaporation container and the inner peripheral side surface of the accommodation hole. When the heating device is heated, the evaporation container and the container main body are heated. The discharge device according to claim 1, which is heated by conduction.   The container main body is provided with an auxiliary heating device for a container main body that contacts the container main body and heats the container main body by heat conduction so as to be in close contact with the container main body and surround the side surface of the container main body. Or the discharge | release apparatus of any one of Claim 2.   The discharge device according to any one of claims 1 to 3, further comprising a lid member provided with a plurality of evaporation ports through which the vapor passes.   The discharge device according to claim 4, wherein the vapor is discharged from an opening of each evaporation container in a space surrounded by the lid member.   The discharge device according to claim 4, wherein the lid member is provided in each opening of the evaporation container, and the vapor that has passed through the evaporation port of the lid member is discharged. A vacuum chamber and the discharge device according to any one of claims 4 to 6,
The discharge device is a thin film forming device disposed in the vacuum chamber.   In the vacuum chamber, a plurality of the discharge devices are arranged side by side along one reference direction, and each discharge device controls the temperature of the evaporation container of each discharge device separately for each discharge device. The thin film forming apparatus according to claim 7 configured to be able to perform. Two adjacent discharge devices are arranged on the different straight lines among the two straight lines parallel to the reference direction,
The thin film forming apparatus according to claim 8, wherein the distance in the reference direction between the centers of the two adjacent evaporation ports including the evaporation ports at the ends of the two adjacent discharge devices is the same.

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