JP2000164353A - Manufacture of luminescent element - Google Patents
Manufacture of luminescent elementInfo
- Publication number
- JP2000164353A JP2000164353A JP10332763A JP33276398A JP2000164353A JP 2000164353 A JP2000164353 A JP 2000164353A JP 10332763 A JP10332763 A JP 10332763A JP 33276398 A JP33276398 A JP 33276398A JP 2000164353 A JP2000164353 A JP 2000164353A
- Authority
- JP
- Japan
- Prior art keywords
- layers
- layer
- light emitting
- transport layer
- cathode electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 51
- 239000010410 layer Substances 0.000 claims abstract description 305
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 238000000034 method Methods 0.000 claims abstract description 36
- 239000011229 interlayer Substances 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 24
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 5
- 238000005401 electroluminescence Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 20
- 239000002184 metal Substances 0.000 abstract description 20
- 239000012790 adhesive layer Substances 0.000 abstract description 11
- 238000001771 vacuum deposition Methods 0.000 abstract description 5
- 108091006149 Electron carriers Proteins 0.000 abstract 2
- 230000005525 hole transport Effects 0.000 description 63
- 230000032258 transport Effects 0.000 description 56
- 238000007740 vapor deposition Methods 0.000 description 46
- 238000000151 deposition Methods 0.000 description 41
- 230000008021 deposition Effects 0.000 description 41
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 12
- 239000010409 thin film Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 9
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 239000007772 electrode material Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- -1 hexafluorophosphate Chemical compound 0.000 description 5
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 4
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 125000000524 functional group Chemical group 0.000 description 4
- 229920002799 BoPET Polymers 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- 230000001050 lubricating effect Effects 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- QJJDJWUCRAPCOL-UHFFFAOYSA-N 1-ethenoxyoctadecane Chemical compound CCCCCCCCCCCCCCCCCCOC=C QJJDJWUCRAPCOL-UHFFFAOYSA-N 0.000 description 2
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 2
- YIKSHDNOAYSSPX-UHFFFAOYSA-N 1-propan-2-ylthioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2C(C)C YIKSHDNOAYSSPX-UHFFFAOYSA-N 0.000 description 2
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 2
- LCHAFMWSFCONOO-UHFFFAOYSA-N 2,4-dimethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC(C)=C3SC2=C1 LCHAFMWSFCONOO-UHFFFAOYSA-N 0.000 description 2
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 2
- ZCDADJXRUCOCJE-UHFFFAOYSA-N 2-chlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC=C3SC2=C1 ZCDADJXRUCOCJE-UHFFFAOYSA-N 0.000 description 2
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 2
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 2
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- INXWLSDYDXPENO-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(CO)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C INXWLSDYDXPENO-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- VFHVQBAGLAREND-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 VFHVQBAGLAREND-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- AFSIMBWBBOJPJG-UHFFFAOYSA-N ethenyl octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC=C AFSIMBWBBOJPJG-UHFFFAOYSA-N 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229940088644 n,n-dimethylacrylamide Drugs 0.000 description 2
- YLGYACDQVQQZSW-UHFFFAOYSA-N n,n-dimethylprop-2-enamide Chemical compound CN(C)C(=O)C=C YLGYACDQVQQZSW-UHFFFAOYSA-N 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- SUDVPELGFZKOMD-UHFFFAOYSA-N 1,2-di(propan-2-yl)thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=C(C(C)C)C(C(C)C)=CC=C3SC2=C1 SUDVPELGFZKOMD-UHFFFAOYSA-N 0.000 description 1
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical compound C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 1
- BRKORVYTKKLNKX-UHFFFAOYSA-N 2,4-di(propan-2-yl)thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C(C)C)=CC(C(C)C)=C3SC2=C1 BRKORVYTKKLNKX-UHFFFAOYSA-N 0.000 description 1
- RAPHUPWIHDYTKU-WXUKJITCSA-N 9-ethyl-3-[(e)-2-[4-[4-[(e)-2-(9-ethylcarbazol-3-yl)ethenyl]phenyl]phenyl]ethenyl]carbazole Chemical compound C1=CC=C2C3=CC(/C=C/C4=CC=C(C=C4)C4=CC=C(C=C4)/C=C/C=4C=C5C6=CC=CC=C6N(C5=CC=4)CC)=CC=C3N(CC)C2=C1 RAPHUPWIHDYTKU-WXUKJITCSA-N 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- 229910000733 Li alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- LFOXEOLGJPJZAA-UHFFFAOYSA-N [(2,6-dimethoxybenzoyl)-(2,4,4-trimethylpentyl)phosphoryl]-(2,6-dimethoxyphenyl)methanone Chemical compound COC1=CC=CC(OC)=C1C(=O)P(=O)(CC(C)CC(C)(C)C)C(=O)C1=C(OC)C=CC=C1OC LFOXEOLGJPJZAA-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000001989 lithium alloy Substances 0.000 description 1
- 230000033001 locomotion Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- PNGLEYLFMHGIQO-UHFFFAOYSA-M sodium;3-(n-ethyl-3-methoxyanilino)-2-hydroxypropane-1-sulfonate;dihydrate Chemical compound O.O.[Na+].[O-]S(=O)(=O)CC(O)CN(CC)C1=CC=CC(OC)=C1 PNGLEYLFMHGIQO-UHFFFAOYSA-M 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、例えば有機エレク
トロルミネッセンス素子（以下、有機ＥＬ素子と表示）
の製造に好適な、発光素子の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescence device (hereinafter referred to as an organic EL device).
The present invention relates to a method for manufacturing a light-emitting element suitable for manufacturing a light-emitting device.
【０００２】[0002]
【従来の技術】所定の光を発光する発光素子の中には、
電圧を印加することにより内部に電子と正孔が再結合し
て発光する有機エレクトロルミネッセンス層（以下、有
機ＥＬ層と記載）と、有機ＥＬ層を挟むアノード電極並
びにカソード電極と、を有する有機ＥＬ素子がある。有
機ＥＬ層は、例えば正孔輸送層、電子輸送層等の複数の
有機材料からなる薄膜で構成され、無機ＥＬ層より薄く
成膜することができるので、発光素子自体を薄くかつ軽
量にすることができる。2. Description of the Related Art Some light emitting devices that emit predetermined light include:
An organic EL having an organic electroluminescent layer (hereinafter, referred to as an organic EL layer) that emits light by recombination of electrons and holes when a voltage is applied thereto, and an anode electrode and a cathode electrode sandwiching the organic EL layer There are elements. The organic EL layer is formed of a thin film composed of a plurality of organic materials such as a hole transport layer and an electron transport layer, and can be formed thinner than the inorganic EL layer. Can be.
【０００３】これらの各構成要素を形成する一般的な方
法は、メタルマスクを併用した真空蒸着法である。すな
わち、アノード電極をパターン形成した基板に、正孔輸
送層と、電子輸送層とを同じパターンに形成し、さら
に、カソード電極を別のパターンに形成する。また、特
開平９−１６７６８４号に開示された方法によれば、予
めインクシート上に正孔輸送層の材料，有機ＥＬ層の材
料，電子輸送層の材料をそれぞれ別個に形成し、これら
各材料を、予めアノード電極をパターン形成した基板
に、順次昇華転写した後に、カソード電極をメタルマス
クを用いた真空蒸着法により形成することにより、有機
ＥＬ素子の発光部を形成する。さらに、特開平９−７７
６３号に開示された方法によれば、アノード電極と正孔
輸送層を一方の基板上に形成し、有機ＥＬ層と電子輸送
層を他方の基板上に形成し、前記一方の基板と前記他方
の基板とを貼り合わせることにより、有機ＥＬ素子の発
光部を形成する。A general method for forming these components is a vacuum deposition method using a metal mask. That is, the hole transport layer and the electron transport layer are formed in the same pattern on the substrate on which the anode electrode is patterned, and the cathode electrode is formed in another pattern. According to the method disclosed in Japanese Patent Application Laid-Open No. 9-167684, a material for a hole transport layer, a material for an organic EL layer, and a material for an electron transport layer are separately formed on an ink sheet in advance. Are sequentially transferred to a substrate on which an anode electrode has been patterned in advance, and then the cathode electrode is formed by a vacuum evaporation method using a metal mask, thereby forming a light emitting portion of the organic EL element. Further, Japanese Patent Application Laid-Open No. 9-77
According to the method disclosed in No. 63, the anode electrode and the hole transport layer are formed on one substrate, the organic EL layer and the electron transport layer are formed on the other substrate, and the one substrate and the other The light emitting portion of the organic EL element is formed by bonding the substrate with the above substrate.
【０００４】[0004]
【発明が解決しようとする課題】しかし、上述した方法
を用いて前記複数の薄膜を所定のパターンに形成するに
は、真空中においてメタルマスクを用いる必要があっ
た。すなわち、通常の真空蒸着法においては、正孔輸送
層、電子輸送層、カソード電極を形成する際に、基板に
メタルマスクを用いる必要があった。また、特開平９−
１６７６８４や特開平９−７７６３においても、アノー
ド電極およびカソード電極の双方を形成する際にはメタ
ルマスクを用いる必要があった。このため、従来の方法
においては、一つの層を所定のパターンに形成する度
に、メタルマスクの位置合わせや基板の移動を高精度に
行う必要があり、スループットが低かった。However, in order to form the plurality of thin films into a predetermined pattern using the above-described method, it was necessary to use a metal mask in a vacuum. That is, in the ordinary vacuum deposition method, it is necessary to use a metal mask for the substrate when forming the hole transport layer, the electron transport layer, and the cathode electrode. Further, Japanese Unexamined Patent Publication No.
Also in 167684 and JP-A-9-7763, it was necessary to use a metal mask when forming both the anode electrode and the cathode electrode. For this reason, in the conventional method, every time one layer is formed in a predetermined pattern, it is necessary to perform the positioning of the metal mask and the movement of the substrate with high accuracy, and the throughput is low.
【０００５】さらに、これらの各層の積層工程では、積
層する度に、通常減圧された炉内に蒸着装置が配置され
た蒸着炉から減圧炉を介し次の蒸着炉に基板を移送して
行われる。したがって、各層の成膜毎に一旦減圧炉に基
板を移送しなければならず、スループットを上げられな
かった。従って、生産装置一つあたりの単位時間あたり
の生産量、すなわち製造コストを下げることが困難であ
った。Further, in the step of laminating each of these layers, each time the layers are laminated, the substrate is transferred from a vapor deposition furnace in which a vapor deposition apparatus is usually placed in a reduced pressure furnace to the next vapor deposition furnace via a reduced pressure furnace. . Therefore, the substrate must be once transferred to a reduced pressure furnace every time each layer is formed, and the throughput cannot be increased. Accordingly, it has been difficult to reduce the production amount per unit time per production apparatus, that is, the production cost.
【０００６】本発明は、上記問題点を解決するためのも
のであり、メタルマスクを使う回数を従来より減らした
又はメタルマスクを使用しない発光素子の製造方法を提
供することを目的とする。さらに、本発明は、積層工程
中に蒸着炉−減圧炉間の移送回数を従来より減らした発
光素子の製造方法を提供することも目的とする。An object of the present invention is to solve the above-mentioned problems, and it is an object of the present invention to provide a method for manufacturing a light emitting device in which the number of times a metal mask is used is reduced as compared with the related art or a metal mask is not used. Still another object of the present invention is to provide a method for manufacturing a light emitting device in which the number of times of transfer between a deposition furnace and a reduced pressure furnace during the laminating step is reduced as compared with the conventional method.
【０００７】[0007]
【課題を解決するための手段】上記問題点を解決するた
め、請求項１記載の発明は、基板上に、所定のパターン
に積層された複数の層から構成される発光部を有する発
光素子の製造方法において、前記基板上に形成された前
記複数の層の一部の上のうち、所定部分に剥離あるいは
分断容易な物質からなる離型層を積層し、前記複数の層
の他部を、前記離型層および前記複数の層の一部の上に
積層した後、前記複数の層の上に接着性の支持体を貼着
し、前記複数の層の他部の前記離型層の上に積層した部
分を剥離させること、を特徴とする。According to a first aspect of the present invention, there is provided a light emitting device having a light emitting portion having a plurality of layers laminated in a predetermined pattern on a substrate. In the manufacturing method, on a part of the plurality of layers formed on the substrate, a release layer made of a substance that is easily separated or separated at a predetermined portion is laminated, and the other part of the plurality of layers is formed. After laminating on a part of the release layer and the plurality of layers, an adhesive support is attached on the plurality of layers, and on the release layer in another part of the plurality of layers. Is characterized in that the laminated portion is peeled off.
【０００８】ここで、前記離型層は、前記複数の層を構
成する物質との界面における接合力が弱い物質や、ある
いは軟らかくて容易に分断する物質である。また、前期
離型層は、支持体との密着性がある点で、−ＯＨ，−Ｃ
ＯＯＨ，−ＣＮなどから選択された官能基を有する分子
鎖を持つポリマーが望ましく、更に表面エネルギーを低
くする長鎖アルキル基，フッ素基，珪素基などから選択
された官能基を有することが望ましい。具体的には、
（メタ）アクリル酸，アクリロニトリル，ヒドロキシエ
チルアクリレートとステアリン酸ビニル，ステアリルビ
ニルエーテル，（メタ）アクリル酸ステアリルなどの共
重合体、離型用シリコーン樹脂（東レシリコーン製：Ｓ
Ｈ２００など）を汎用ポリマー（アクリル樹脂，エポキ
シ樹脂，ウレタン樹脂，キシレン樹脂，etc）にブレン
ドする材料等が望ましい。また、前記支持体としては、
例えばＰＥＴフィルムを用いる。また、前記支持体とし
ては、例えば一面に熱軟化性樹脂を塗布したＰＥＴフィ
ルムを用いる。また、熱を加える手段としては、例えば
抵抗加熱手段を有するサーマルヘッドを用いてもよい。
さらに、前記複数の層の一部は、微細なパターンである
場合はメタルマスクを用いた真空プロセスやフォトリソ
グラフィプロセスにより積層することもでき、、例えば
バックライトのようなラフパターンの場合は印刷により
積層することもできる。また、前記複数の層の一部およ
び前記複数の層の他部としては、ともに、単層であって
も複層であってもよい。Here, the release layer is a material having a weak bonding force at an interface with a material constituting the plurality of layers, or a soft and easily separated material. In addition, the release layer has -OH, -C in that it has adhesion to the support.
A polymer having a molecular chain having a functional group selected from OOH, -CN, or the like is desirable, and a polymer having a functional group selected from a long-chain alkyl group, a fluorine group, a silicon group, or the like that lowers the surface energy is desirable. In particular,
Copolymers of (meth) acrylic acid, acrylonitrile, hydroxyethyl acrylate and vinyl stearate, stearyl vinyl ether, stearyl (meth) acrylate, silicone resin for mold release (manufactured by Toray Silicone: S
H200 or the like is preferably blended with a general-purpose polymer (acrylic resin, epoxy resin, urethane resin, xylene resin, etc.). Further, as the support,
For example, a PET film is used. As the support, for example, a PET film coated with a heat-softening resin on one surface is used. As a means for applying heat, for example, a thermal head having resistance heating means may be used.
Further, a part of the plurality of layers may be laminated by a vacuum process or a photolithography process using a metal mask when the pattern is a fine pattern, and may be formed by printing in the case of a rough pattern such as a backlight. They can also be stacked. Further, a part of the plurality of layers and the other part of the plurality of layers may each be a single layer or a multilayer.
【０００９】この請求項１記載の発明によれば、前記基
板上に形成された前記複数の層の一部の上のうち、所定
部分に、前記離型層を積層する。続いて、前記複数の層
の他部を前記離型層及び前記複数の層の一部の上に積層
する。続いて、前記基板の複数の層の上に前記支持体を
貼り合わせて剥がすことにより、前記複数の層の他部の
前記離型層の上に積層した部分を剥離させ、前記複数の
層の他部のパターン形成を行うことにより、前記発光部
を作製できる。すなわち、発光部の作製において、メタ
ルマスク等の位置合わせを高精度に行う回数は従来と比
べて減少するため、生産装置一つあたりの単位時間あた
りの生産量、すなわちスループットは従来と比べて大幅
に向上して、発光素子の製造コストを下げることができ
る。さらに、例えば液晶表示装置のバックライトなど、
微細構造を有さない発光素子の発光部を作製する場合
は、前記複数の層の一部は印刷によってそれぞれのパタ
ーンに積層できるため、複数の層の他部を形成するため
のメタルマスクを全く用いずに発光部を作製できる。According to the first aspect of the present invention, the release layer is laminated on a predetermined portion of a part of the plurality of layers formed on the substrate. Subsequently, another part of the plurality of layers is laminated on the release layer and a part of the plurality of layers. Subsequently, by laminating and peeling the support on the plurality of layers of the substrate, a portion of the plurality of layers laminated on the release layer is separated, and the plurality of layers are separated. By forming the pattern of the other part, the light emitting part can be manufactured. That is, in the production of the light emitting part, the number of times of performing the positioning of the metal mask or the like with high precision is reduced as compared with the conventional case, so that the production amount per unit of production equipment per unit time, that is, the throughput is significantly larger than the conventional case. And the manufacturing cost of the light emitting element can be reduced. Further, for example, a backlight of a liquid crystal display device,
When manufacturing a light-emitting portion of a light-emitting element having no microstructure, since a part of the plurality of layers can be laminated on each pattern by printing, a metal mask for forming the other part of the plurality of layers is completely eliminated. The light emitting portion can be manufactured without using the light emitting portion.
【００１０】また、請求項２記載の発明は、請求項１記
載の発光素子の製造方法において、前記複数の層の他部
は、カソード電極を含んでおり、前記複数の層の一部
は、アノード電極と、前記カソード電極と前記アノード
電極との短絡を防ぐ層間絶縁膜とを含むことを特徴とす
る。According to a second aspect of the present invention, in the method of manufacturing a light emitting device according to the first aspect, the other part of the plurality of layers includes a cathode electrode, and a part of the plurality of layers includes An anode electrode, and an interlayer insulating film for preventing a short circuit between the cathode electrode and the anode electrode.
【００１１】この請求項２記載の発明によれば、カソー
ド電極と前記アノード電極との配線構造をより簡単に製
造することができる。According to the second aspect of the invention, the wiring structure between the cathode electrode and the anode electrode can be manufactured more easily.
【００１２】また、請求項３記載の発明は、請求項２記
載の発光素子の製造方法において、前記アノード電極の
外部端子接続部に対応する部分には前記層間絶縁膜を形
成せず、かつ、前記離型層を形成し、前記カソード電極
の外部端子接続部に対応する部分には前記離型層を形成
しないこと、を特徴とする。According to a third aspect of the present invention, in the method for manufacturing a light emitting device according to the second aspect, the interlayer insulating film is not formed in a portion corresponding to an external terminal connection portion of the anode electrode, and The release layer is formed, and the release layer is not formed on a portion of the cathode electrode corresponding to the external terminal connection portion.
【００１３】この請求項３記載の発明によれば、前記ア
ノード電極の外部端子接続部の上に直接積層された前記
複数の層の他部は除去され、かつ、前記カソード電極の
外部端子接続部は除去されないので、前記アノード電極
の外部端子接続部と前記カソード電極の外部端子接続部
の双方は、特別な作業を行うことなしに形成される。According to the third aspect of the present invention, other portions of the plurality of layers directly laminated on the external terminal connection portion of the anode electrode are removed, and the external terminal connection portion of the cathode electrode is removed. Is not removed, both the external terminal connection of the anode electrode and the external terminal connection of the cathode electrode are formed without any special operation.
【００１４】また、請求項４記載の発明は、請求項１〜
請求項３のいずれかに記載の発光素子の製造方法におい
て、前記支持体は加熱により接着性を発揮するか、加熱
しても接着性が失われない部材からなり、前記複数の層
に貼り合わせ、さらに加熱して前記複数の層の上に貼着
した後に、前記複数の層から剥がされることを特徴とす
る。[0014] The invention according to claim 4 provides the invention according to claims 1 to
4. The method for manufacturing a light-emitting device according to claim 3, wherein the support exhibits adhesion by heating, or is made of a member that does not lose adhesion even when heated, and is bonded to the plurality of layers. After being further heated and adhered on the plurality of layers, they are peeled off from the plurality of layers.
【００１５】ここで、前記支持体は、例えば一面に熱軟
化性樹脂か加熱しても接着性が失われない部材を塗布す
ることにより、加熱により接着性を発揮するか、又は、
加熱しても粘着性を失わない。また、前記支持体の全面
を加熱してもよいし、前記複数の層の他部の不要部に対
応する部分のみを選択的に加熱してもよい。また加熱は
複数の層の他部を柔らかくし、より分割しやすい作用が
ある。Here, the support may exhibit adhesiveness by heating, for example, by applying a heat-softening resin or a member which does not lose its adhesiveness even when heated, to one surface, or
Does not lose tackiness when heated. Further, the entire surface of the support may be heated, or only a portion corresponding to an unnecessary portion of another portion of the plurality of layers may be selectively heated. Heating also has the effect of softening the other parts of the layers and making it easier to divide.
【００１６】この請求項４記載の発明によれば、前記支
持体は前記複数の層に接着するので、前記複数の層の不
要箇所の除去、すなわちパターン形成はより確実に行わ
れる。According to the fourth aspect of the present invention, the support adheres to the plurality of layers, so that unnecessary portions of the plurality of layers, that is, pattern formation, are performed more reliably.
【００１７】また、請求項５記載の発明は、請求項４に
記載の発光素子の製造方法において、前記支持体は加熱
手段により加熱され、前記支持体の加熱側には、前記支
持体と前記加熱手段との接着を防止するための耐熱層を
設けることを特徴とする。According to a fifth aspect of the present invention, in the method for manufacturing a light emitting device according to the fourth aspect, the support is heated by a heating means, and the support is provided on a heating side of the support. A heat-resistant layer for preventing adhesion to a heating means is provided.
【００１８】ここで、前記耐熱層としては、アクリル
系、ウレタン系、アクリルウレタン系、エポキシ系、シ
リコーン系等のポリマー、具体的には、ジペンタエリス
リトールモノヒドロキシペンタアクリレート、ジペンタ
エリスルトールヘキサ（メタ）アクリレート、ヒドロキ
シエチル（メタ）アクリレート、グリシジル（メタ）ア
クリレート、Ｎ，Ｎ−ジメチルアクリルアミド、エポキ
シ（メタ）アクリレート、ウレタン（メタ）アクリレー
ト等から選択される反応性化合物に、１−ヒドロキシシ
クロヘキシルフェニルケトン、（１−６−η−クメン）
（η−シクロペンタジエニル）鉄（１＋）六フッ化リン
酸（１−）、２，２−ジメトキシ−２−フェニルアセト
フェノン、ミヒラーズケトン、２−メチル−〔４−（メ
チルチオ）フェニル〕−２−モルフォリノ−１−プロパ
ノン、２−ベンジル−２−ジメチルアミノ−１−（４−
モルホリノフェニル）−ブタノン−１、２−クロロチオ
キサントン、２，４−ジメチルチオキサントン、２，４
−ジイソプロピルチオキサントン、イソプロピルチオキ
サントン、２，４，６−トリメチルベンゾイルジフェニ
ルホスフィンオキサイド、ビス（２，６−ジメトキシベ
ンゾイル）−２，４，４−トリメチルペンチルホスフィ
ンオキサイド等から選択された光重合開始剤が添加され
て重合されたポリマーものが望ましい。Here, the heat-resistant layer is made of an acrylic, urethane, acrylic urethane, epoxy, silicone or other polymer, specifically, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexa- Reactive compounds selected from (meth) acrylate, hydroxyethyl (meth) acrylate, glycidyl (meth) acrylate, N, N-dimethylacrylamide, epoxy (meth) acrylate, urethane (meth) acrylate, and 1-hydroxycyclohexyl Phenyl ketone, (1-6-η-cumene)
(Η-cyclopentadienyl) iron (1+) hexafluorophosphate (1-), 2,2-dimethoxy-2-phenylacetophenone, Michler's ketone, 2-methyl- [4- (methylthio) phenyl] -2- Morpholino-1-propanone, 2-benzyl-2-dimethylamino-1- (4-
Morpholinophenyl) -butanone-1,2-chlorothioxanthone, 2,4-dimethylthioxanthone, 2,4
A photoinitiator selected from diisopropylthioxanthone, isopropylthioxanthone, 2,4,6-trimethylbenzoyldiphenylphosphine oxide, bis (2,6-dimethoxybenzoyl) -2,4,4-trimethylpentylphosphine oxide and the like is added It is desirable to use a polymer obtained by polymerization.
【００１９】この請求項５記載の発明によれば、前記支
持体の加熱側に耐熱潤滑層を設けたので、熱が前記支持
体に与える影響は緩和され、従って、前記所定部分への
加熱は前記支持体に与える影響を考慮することなく行え
る。According to the fifth aspect of the present invention, since the heat-resistant lubricating layer is provided on the heating side of the support, the influence of heat on the support is reduced, so that the heating of the predetermined portion is not performed. This can be performed without considering the influence on the support.
【００２０】また、請求項６記載の発明は、請求項１〜
請求項５のいずれかに記載の発光素子の製造方法におい
て、前記基板の一面を、一つの真空空間内に別個に配置
された複数の材料蒸発源にさらすことにより、前記複数
の層の他部を形成すること、を特徴とする。The invention described in claim 6 is the first invention.
The method for manufacturing a light-emitting device according to claim 5, wherein one surface of the substrate is exposed to a plurality of material evaporation sources separately arranged in one vacuum space to thereby form another part of the plurality of layers. Is formed.
【００２１】ここで、前記一つの真空空間とは、一つの
真空チャンバー内において、一度も大気圧に戻さないこ
とを意味する。また、前記材料蒸発源としては、例えば
真空蒸発源を用いる。Here, the one vacuum space means that the pressure is never returned to the atmospheric pressure in one vacuum chamber. As the material evaporation source, for example, a vacuum evaporation source is used.
【００２２】この請求項６記載の発明によれば、前記複
数の層の他部は、一つの真空空間、すなわち一つの真空
チャンバー内において、一度も常圧に戻さずに、連続的
に形成できるので、前記一部の層の製造コストは下が
る。従って、前記発光素子の製造コストを下げられる。According to the invention of claim 6, the other part of the plurality of layers can be formed continuously in one vacuum space, that is, in one vacuum chamber, without returning to normal pressure. Therefore, the manufacturing cost of the partial layer is reduced. Therefore, the manufacturing cost of the light emitting device can be reduced.
【００２３】また、請求項７記載の発明は、請求項１〜
請求項６のいずれかに記載の発光素子の製造方法におい
て、前記発光素子は、有機エレクトロルミネッセンス素
子であることを特徴とする。Further, the invention according to claim 7 is the same as the invention according to claims 1 to 3.
7. The method for manufacturing a light emitting device according to claim 6, wherein the light emitting device is an organic electroluminescence device.
【００２４】この請求項７記載の発明によれば、有機Ｅ
Ｌ素子の製造方法において、一つの装置あたりのスルー
プットは向上するので、有機ＥＬ素子の製造コストは下
がる。According to the seventh aspect of the present invention, the organic E
In the method of manufacturing the L element, the throughput per device is improved, so that the manufacturing cost of the organic EL element is reduced.
【００２５】[0025]
【発明の実施の形態】以下、図を参照して、本発明の実
施の形態例である有機ＥＬ発光部１の製造方法につい
て、図１〜図４を用いて詳細に説明する。ここで、有機
ＥＬ発光部１は、例えばバックライトなどに用いられる
ラフパターンとする。図１は、有機ＥＬ発光部１の製造
方法の各工程で薄膜が成膜された平面図である。図２
は、予めアノード電極１０ａ（複数の層の一部）及び層
間絶縁層１０ｂ（複数の層の一部）をそれぞれのパター
ンに積層した基板１０上に、正孔輸送層１１（複数の層
の他部），発光層１２（複数の層の他部），電子輸送層
１３（複数の層の他部），カソード電極１４（複数の層
の他部）を連続して形成する薄膜連続形成装置２の構成
および動作を説明する概略図である。図３は、基板１０
の表部に形成された、正孔輸送層１１，発光層１２，電
子輸送層１３，カソード電極１４を、必要部分を残し
て、支持体１５の上に除去する方法を説明する概略図で
ある。図４は、有機ＥＬ発光部１の積層構造を説明する
概略図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for manufacturing an organic EL light emitting section 1 according to an embodiment of the present invention will be described below in detail with reference to FIGS. Here, the organic EL light emitting section 1 has a rough pattern used for, for example, a backlight. FIG. 1 is a plan view in which a thin film is formed in each step of the method of manufacturing the organic EL light emitting unit 1. FIG.
A hole transport layer 11 (a part of a plurality of layers) and a substrate 10 on which an anode electrode 10a (a part of a plurality of layers) and an interlayer insulating layer 10b (a part of a plurality of layers) are laminated in advance. Part), a light-emitting layer 12 (other parts of a plurality of layers), an electron transport layer 13 (other parts of a plurality of layers), and a cathode film 14 (other parts of a plurality of layers). FIG. 2 is a schematic diagram for explaining the configuration and operation of FIG. FIG.
FIG. 4 is a schematic diagram for explaining a method of removing the hole transport layer 11, the light emitting layer 12, the electron transport layer 13, and the cathode electrode 14 formed on the surface of the support 15 except for necessary portions. . FIG. 4 is a schematic diagram illustrating a laminated structure of the organic EL light emitting unit 1.
【００２６】まず、薄膜連続形成装置２の構成につい
て、図２を用いて説明する。図２（Ａ）に示すように、
連続薄膜形成装置２は、真空チャンバー１００の中に、
正孔輸送層蒸着装置１１１と、発光層蒸着装置１２１
と、電子輸送層蒸着装置１３１と、カソード電極蒸着装
置１４１と、ロール状に巻かれた基板１０を正孔輸送層
蒸着装置１１１，発光層蒸着装置１２１，電子輸送層蒸
着装置１３１，カソード電極蒸着装置１４１上に支持す
るとともに所定方向に移動させるリール１６，１６と、
を設けた構成とする。なお、正孔輸送層蒸着装置１１１
と発光層蒸着装置１２１の間と、発光層蒸着装置１２１
と電子輸送層蒸着装置１３１の間と、電子輸送層蒸着装
置１３１とカソード電極蒸着装置１４１との間には、そ
れぞれの蒸着源の侵入を防ぐための隔壁１７，１７，１
７が、それぞれ設けられる。さらに、真空チャンバー１
００は、配管（図示省略）を介して真空排気系（図示省
略）に接続される。First, the configuration of the continuous thin film forming apparatus 2 will be described with reference to FIG. As shown in FIG.
The continuous thin film forming apparatus 2 includes:
Hole transport layer deposition apparatus 111 and light emitting layer deposition apparatus 121
The electron transport layer deposition apparatus 131, the cathode electrode deposition apparatus 141, and the substrate 10 wound into a roll are transferred to the hole transport layer deposition apparatus 111, the light emitting layer deposition apparatus 121, the electron transport layer deposition apparatus 131, and the cathode electrode deposition. Reels 16, 16 supported on the device 141 and moved in a predetermined direction;
Is provided. The hole transport layer deposition device 111
Between the light emitting layer vapor deposition device 121 and the light emitting layer vapor deposition device 121
Between the electron transport layer vapor deposition device 131 and the electron transport layer vapor deposition device 131 and the cathode electrode vapor deposition device 141, the partition walls 17, 17, 1 for preventing invasion of the respective vapor deposition sources.
7 are provided respectively. Furthermore, vacuum chamber 1
Reference numeral 00 is connected to a vacuum exhaust system (not shown) via a pipe (not shown).
【００２７】正孔輸送層蒸着装置１１１は、正孔輸送層
１１を構成する正孔輸送層材料を適量入れることができ
るように上方に開口部を有する坩堝と、正孔輸送層材料
を蒸発させるために坩堝を所定の温度に加熱することが
できる加熱手段と、により構成される。正孔輸送層蒸着
装置１１１の坩堝内にはN,N'-ジ(α-ナフチル)-N,N'-ジ
フェニル-1,1'-ビフェニル-4,4'-ジアミン（以下、α−
ＮＰＤ）が入れられている。The hole transport layer vapor deposition device 111 has a crucible having an opening above so that a proper amount of the hole transport layer material constituting the hole transport layer 11 can be charged therein, and evaporates the hole transport layer material. Heating means capable of heating the crucible to a predetermined temperature. N, N'-di (α-naphthyl) -N, N'-diphenyl-1,1'-biphenyl-4,4'-diamine (hereinafter referred to as α-
NPD).
【００２８】発光層蒸着装置１２１は、発光層１２を構
成する発光層材料を適量入れることができるように上方
に開口部を有する坩堝と、発光層材料を蒸発させるため
に坩堝を所定の温度に加熱することができる加熱手段
と、により構成される。発光層蒸着装置１２１の坩堝内
には4,4'-ビス(2,2-ジフェニルビニレン)ビフェニル
（以下、ＤＰＶＢｉ）９６ｗｔ％と4,4'-ビス(2-カルバ
ゾールビニレン)ビフェニル（以下、ＢＣｚＶＢｉ）４
ｗｔ％の混合物が入れられている。The light emitting layer vapor deposition apparatus 121 has a crucible having an opening at an upper portion so that an appropriate amount of the light emitting layer material constituting the light emitting layer 12 can be put therein, and a crucible at a predetermined temperature for evaporating the light emitting layer material. And heating means capable of heating. 96 wt% of 4,4′-bis (2,2-diphenylvinylene) biphenyl (hereinafter, DPVBi) and 4,4′-bis (2-carbazolevinylene) biphenyl (hereinafter, BCzVBi) are placed in the crucible of the light emitting layer deposition apparatus 121. ) 4
A wt% mixture is included.
【００２９】電子輸送層蒸着装置１３１は、電子輸送層
１３を構成する電子輸送層材料を適量入れることがで
き、上方に開口部を有する坩堝と、電子輸送層材料を蒸
発させるために坩堝を所定の温度に加熱することができ
る加熱手段と、により構成される。電子輸送層蒸着装置
１３１の坩堝内にはトリス(8-キノリノレート)アルミニ
ウム錯体（以下、Ａｌｑ３）が入れられている。The electron transport layer vapor deposition apparatus 131 is capable of charging an appropriate amount of the electron transport layer material constituting the electron transport layer 13, and includes a crucible having an opening above and a crucible for evaporating the electron transport layer material. And a heating means capable of heating to a temperature of The crucible of the electron transport layer deposition apparatus 131 contains a tris (8-quinolinolate) aluminum complex (hereinafter, Alq3).
【００３０】カソード電極蒸着装置１４１は、カソード
電極１４を構成するカソード電極材料を適量入れること
ができ、上方に開口部を有する坩堝と、カソード電極材
料を蒸発させるために坩堝を所定の温度に加熱すること
ができる加熱手段と、により構成される。カソード電極
蒸着装置１４１の坩堝内にはカソード電極材料としてＡ
ｌ−Ｌｉ合金が入れられている。カソード電極材料とし
ては、例えばＡｌ−Ｌｉ合金の他にＭｇ、ＭｇＡｇ、Ｍ
ｇＩｎ、Ａｌが適用可能な場合もある。The cathode electrode deposition apparatus 141 can receive an appropriate amount of the cathode electrode material constituting the cathode electrode 14, and heats the crucible to a predetermined temperature in order to evaporate the cathode electrode material. And heating means that can perform heating. In the crucible of the cathode electrode deposition apparatus 141, A
Contains an l-Li alloy. As the cathode electrode material, for example, in addition to Al-Li alloy, Mg, MgAg, M
In some cases, gIn and Al may be applicable.
【００３１】リール１６は、真空チャンバー１００外部
に設けられたモータなどの駆動源（図示省略）から伝達
される動力により、ロール状に巻かれた基板１０を正孔
輸送層蒸着装置１１１，発光層蒸着装置１２１，電子輸
送層蒸着装置１３１，カソード電極蒸着装置１４１にさ
らした後に再びロール状に巻き取る。The reel 16 transports the rolled substrate 10 to the hole transport layer vapor deposition device 111 and the light emitting layer by power transmitted from a drive source (not shown) such as a motor provided outside the vacuum chamber 100. After being exposed to the vapor deposition device 121, the electron transport layer vapor deposition device 131, and the cathode electrode vapor deposition device 141, they are rolled up again.
【００３２】次に、有機ＥＬ発光部１の製造方法につい
て、図１に沿って説明する。なお、基板１０としては、
ＰＥＴ（Polyethylene Terephthalate）フィルムが、ま
た、支持体１５としては、表面に接着層１５ａを有して
いて裏面には、例えば、ジペンタエリスリトールモノヒ
ドロキシペンタアクリレート、ジペンタエリスルトール
ヘキサ（メタ）アクリレート、ヒドロキシエチル（メ
タ）アクリレート、グリシジル（メタ）アクリレート、
Ｎ，Ｎ−ジメチルアクリルアミド、エポキシ（メタ）ア
クリレート、ウレタン（メタ）アクリレート等から選択
される反応性化合物に、１−ヒドロキシシクロヘキシル
フェニルケトン、（１−６−η−クメン）（η−シクロ
ペンタジエニル）鉄（１＋）六フッ化リン酸（１−）、
２，２−ジメトキシ−２−フェニルアセトフェノン、ミ
ヒラーズケトン、２−メチル−〔４−（メチルチオ）フ
ェニル〕−２−モルフォリノ−１−プロパノン、２−ベ
ンジル−２−ジメチルアミノ−１−（４−モルホリノフ
ェニル）−ブタノン−１、２−クロロチオキサントン、
２，４−ジメチルチオキサントン、２，４−ジイソプロ
ピルチオキサントン、イソプロピルチオキサントン、
２，４，６−トリメチルベンゾイルジフェニルホスフィ
ンオキサイド、ビス（２，６−ジメトキシベンゾイル）
−２，４，４−トリメチルペンチルホスフィンオキサイ
ド等から選択された光重合開始剤が添加されて重合され
たポリマーからなる耐熱滑性層１５ｂを有するＰＥＴフ
ィルムが、それぞれ好適に用いられる。Next, a method of manufacturing the organic EL light emitting section 1 will be described with reference to FIG. In addition, as the substrate 10,
A PET (Polyethylene Terephthalate) film, and the support 15 has an adhesive layer 15a on the front surface and dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexa (meth) acrylate on the back surface. , Hydroxyethyl (meth) acrylate, glycidyl (meth) acrylate,
Reactive compounds selected from N, N-dimethylacrylamide, epoxy (meth) acrylate, urethane (meth) acrylate, and the like include 1-hydroxycyclohexylphenyl ketone, (1-6-η-cumene) (η-cyclopentadiene Enyl) iron (1+) hexafluorophosphoric acid (1-),
2,2-dimethoxy-2-phenylacetophenone, Michler's ketone, 2-methyl- [4- (methylthio) phenyl] -2-morpholino-1-propanone, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl ) -Butanone-1,2-chlorothioxanthone,
2,4-dimethylthioxanthone, 2,4-diisopropylthioxanthone, isopropylthioxanthone,
2,4,6-trimethylbenzoyldiphenylphosphine oxide, bis (2,6-dimethoxybenzoyl)
PET films each having a heat-resistant lubricating layer 15b made of a polymer obtained by adding a photopolymerization initiator selected from -2,4,4-trimethylpentylphosphine oxide and the like are preferably used.
【００３３】まず、図１（Ａ）に示すように、基板１０
上に、ＩＴＯ（Indium Tin Oxide）やIn2O3(ZnO)ｘ（ｘ
＞０）等の可視光に対して十分な透過性を示す材料から
なっていて所定のパターンを有するアノード電極１０ａ
と、アノード電極１０ａの周縁部上を覆うとともにその
一部は基板１０と接する層間絶縁層１０ｂとを、複数の
有機ＥＬ発光部１，１・・・に対応するように設ける。First, as shown in FIG.
On top, ITO (Indium Tin Oxide) or In2O3 (ZnO) x (x
> 0) made of a material exhibiting sufficient transparency to visible light and having a predetermined pattern.
And an interlayer insulating layer 10b that covers the periphery of the anode electrode 10a and partially contacts the substrate 10 so as to correspond to the plurality of organic EL light emitting units 1, 1,.
【００３４】ここで、層間絶縁層１０ｂは、酸化シリコ
ンまたは窒化シリコン等からなり、アノード電極１０ａ
とカソード電極１４とが短絡することを防ぐための層で
もあるため、後に層間絶縁層１０ｂの上に積層される正
孔輸送層１１，発光層１２，電子輸送層１３，カソード
電極１４の層厚の和より厚く形成される。さらに、層間
絶縁層１０ｂは、アノード電極１０ａをリード線などの
外部端子と接続するために開口されたアノード電極取り
出し部１０ｄには設けない。なお、有機ＥＬ発光部１は
ラフパターンでもよいため、層間絶縁層１０ｂは、メタ
ルマスクを用いた真空プロセスではなく、印刷により積
層される。アノード電極１０ａはメタルマスクを用いて
もよく、またメタルマスクを用いずにフォトリソグラフ
ィプロセスで形成してもよい。Here, the interlayer insulating layer 10b is made of silicon oxide or silicon nitride, etc.
Is also a layer for preventing a short circuit between the hole transport layer 11, the light emitting layer 12, the electron transport layer 13, and the cathode electrode 14, which are later laminated on the interlayer insulating layer 10b. Formed thicker than the sum of Further, the interlayer insulating layer 10b is not provided in the anode electrode take-out portion 10d opened for connecting the anode electrode 10a to an external terminal such as a lead wire. Since the organic EL light emitting section 1 may have a rough pattern, the interlayer insulating layer 10b is laminated by printing, not by a vacuum process using a metal mask. The anode electrode 10a may use a metal mask, or may be formed by a photolithography process without using a metal mask.
【００３５】次に、図１（Ｂ）に示すように、層間絶縁
層１０ｂおよびアノード電極取り出し部１０ｄの上に、
カソード電極取り出し部１０ｅを除いて、離型層２３
を、印刷により積層する。Next, as shown in FIG. 1B, on the interlayer insulating layer 10b and the anode electrode take-out part 10d,
Except for the cathode electrode take-out part 10e, the release layer 23
Are laminated by printing.
【００３６】ここで、離型層２３は、離型層２３と他の
層との界面の接合力が、後に積層する正孔輸送層１１〜
カソード電極１４間の各界面の接合力より弱くなってこ
の界面で分離するように、あるいは離型層２３そのもの
が容易に層間絶縁層１０ｂ上の残存離型層２４と正孔輸
送層１１に貼り付いた剥離離型層２５に分断するよう
に、支持体との密着性がある点で−ＯＨ，−ＣＯＯＨ，
−ＣＮなどから選択された官能基を有する分子鎖を持つ
ポリマーが望ましく、更に表面エネルギーを低くする長
鎖アルキル基，フッ素基，珪素基などから選択された官
能基を有することが望ましい。具体的には、（メタ）ア
クリル酸，アクリロニトリル，ヒドロキシエチルアクリ
レートとステアリン酸ビニル，ステアリルビニルエーテ
ル，（メタ）アクリル酸ステアリルなどの共重合体、離
型用シリコーン樹脂（東レシリコーン製：ＳＨ２００な
ど）を汎用ポリマー（アクリル樹脂，エポキシ樹脂，ウ
レタン樹脂，キシレン樹脂，etc）にブレンドする材料
を用いる。The release layer 23 has a bonding force at the interface between the release layer 23 and another layer.
The bonding force of each interface between the cathode electrodes 14 is weaker than the bonding force, and the separation layer 23 itself is easily attached to the remaining release layer 24 and the hole transport layer 11 on the interlayer insulating layer 10b so as to be separated at this interface. -OH, -COOH, -COOH,
A polymer having a molecular chain having a functional group selected from —CN or the like is desirable, and a polymer having a functional group selected from a long-chain alkyl group, a fluorine group, a silicon group, or the like that lowers the surface energy is desirable. Specifically, copolymers of (meth) acrylic acid, acrylonitrile, hydroxyethyl acrylate and vinyl stearate, stearyl vinyl ether, stearyl (meth) acrylate, and a silicone resin for mold release (manufactured by Toray Silicone: SH200, etc.) are used. Use materials that are blended with general-purpose polymers (acrylic resin, epoxy resin, urethane resin, xylene resin, etc.).
【００３７】次に、薄膜連続形成装置２を用いて、基板
１０の、先端部と終端部を除いた表面全面に、正孔輸送
層１１，発光層１２，電子輸送層１３，カソード電極１
４を連続的に積層させて、図１（Ｃ）に示す状態とす
る。Next, the hole transport layer 11, the light emitting layer 12, the electron transport layer 13, and the cathode electrode 1 are formed on the entire surface of the substrate 10 excluding the front end and the end using the thin film continuous forming apparatus 2.
4 are continuously laminated to obtain a state shown in FIG.
【００３８】すなわち、リール１６、１６を用いて、基
板１０を図２（Ａ）の矢印に示す方向に動かす。このた
め、基板１０は、正孔輸送層蒸着装置１１１，発光層蒸
着装置１２１，電子輸送層蒸着装置１３１，カソード電
極蒸着装置１４１に、この順序の通りにさらされる。That is, the substrate 10 is moved in the direction indicated by the arrow in FIG. Therefore, the substrate 10 is exposed to the hole transport layer deposition device 111, the light emitting layer deposition device 121, the electron transport layer deposition device 131, and the cathode electrode deposition device 141 in this order.
【００３９】ここで、基板１０は、正孔輸送層蒸着装置
１１１にさらされる間、正孔輸送層蒸着装置１１１より
蒸発した正孔輸送層材料を表面に捕捉する。従って、基
板１０の表部には正孔輸送層１１が一定厚さほど堆積す
る。Here, while the substrate 10 is exposed to the hole transport layer deposition device 111, the surface of the substrate 10 captures the hole transport layer material evaporated from the hole transport layer deposition device 111. Therefore, the hole transport layer 11 is deposited on the surface of the substrate 10 to a certain thickness.
【００４０】続いて、基板１０は、発光層蒸着装置１２
１，電子輸送層蒸着装置１３１，カソード電極蒸着装置
１４１にさらされる間、発光層蒸着装置１２１，電子輸
送層蒸着装置１３１，カソード電極蒸着装置１４１より
蒸発した発光層材料，電子輸送層材料，カソード電極材
料を表部にそれぞれ捕捉する。従って、基板１０の表部
に堆積した正孔輸送層１１の上に、発光層１２，電子輸
送層１３，カソード電極１４が、この順序の通りに積層
する。Subsequently, the substrate 10 is provided with a light emitting layer vapor deposition device 12.
1, the luminescent layer material 121, the luminescent layer material, the electron transport layer material, and the cathode that are evaporated from the luminescent layer deposition device 121, the electron transport layer deposition device 131, and the cathode electrode deposition device 141 during exposure to the electron transport layer deposition device 131 and the cathode electrode deposition device 141. The electrode material is respectively captured on the surface. Therefore, the light emitting layer 12, the electron transport layer 13, and the cathode electrode 14 are stacked in this order on the hole transport layer 11 deposited on the surface of the substrate 10.
【００４１】すなわち、支持体１５のうち、下方に正孔
輸送層蒸着装置１１１が配置される箇所には、正孔輸送
層蒸着装置１１１より蒸発した正孔輸送層材料を表面に
それぞれ捕捉する。従って、支持体１５の表部には正孔
輸送層１１が一定厚さほど堆積する。蒸着の間、支持体
１５はリール１６、１６により図１中の矢印方向に進行
しても良いし、停止していてもよい。That is, the hole transport layer material evaporated from the hole transport layer deposition device 111 is captured on the surface of the support 15 where the hole transport layer deposition device 111 is disposed below. Accordingly, the hole transporting layer 11 is deposited on the surface of the support 15 to a certain thickness. During the vapor deposition, the support 15 may be advanced by the reels 16 and 16 in the direction of the arrow in FIG. 1 or may be stopped.
【００４２】またこの間、支持体１５のうち、正孔輸送
層蒸着装置１１１により既に正孔輸送層１１が蒸着され
た箇所は、発光層蒸着装置１２１上に位置し、発光層蒸
着装置１２１上から蒸発した発光層材料を正孔輸送層１
１の表面にそれぞれ捕捉し、発光層１２が所定の厚さに
堆積する。During this time, the portion of the support 15 where the hole transport layer 11 has already been deposited by the hole transport layer deposition device 111 is located on the light emitting layer deposition device 121, and from the light emitting layer deposition device 121. Evaporated light emitting layer material is transferred to hole transport layer 1
The light emitting layer 12 is deposited on the surface of each of the substrates 1 and 2 to a predetermined thickness.
【００４３】またこの間、支持体１５のうち、発光層蒸
着装置１２１により既に発光層１２が蒸着された箇所
は、電子輸送層蒸着装置１３１上に位置し、電子輸送層
蒸着装置１３１から蒸発した電子輸送層材料を発光層１
２の表面にそれぞれ捕捉し、電子輸送層１３が所定の厚
さに堆積する。In the meantime, the portion of the support 15 where the light emitting layer 12 has already been deposited by the light emitting layer vapor deposition device 121 is located on the electron transport layer vapor deposition device 131, and the electron vaporized from the electron transport layer vapor deposition device 131. Emission layer 1 for transport layer material
The electron transport layer 13 is trapped on the surfaces of the respective layers 2 and deposited to a predetermined thickness.
【００４４】さらにこの間、支持体１５のうち、電子輸
送層蒸着装置１３１により既に電子輸送層１３が蒸着さ
れた箇所は、カソード電極蒸着装置１４１上に位置し、
カソード電極蒸着装置１４１から蒸発したカソード電極
材料層を電子輸送層１３の表面にそれぞれ捕捉し、カソ
ード電極１４が所定の厚さに堆積する。In the meantime, the portion of the support 15 where the electron transport layer 13 has already been deposited by the electron transport layer deposition device 131 is located on the cathode electrode deposition device 141,
The cathode electrode material layers evaporated from the cathode electrode deposition device 141 are respectively captured on the surface of the electron transport layer 13, and the cathode electrode 14 is deposited to a predetermined thickness.
【００４５】正孔輸送層蒸着装置１１１，発光層蒸着装
置１２１，電子輸送層蒸着装置１３１，及びカソード電
極蒸着装置１４１が、それぞれ正孔輸送層１１，発光層
１２，電子輸送層１３，カソード電極１４をそれぞれ所
定の厚さに成膜し終えれば、リール１６、１６により支
持体１５は矢印方向に移動し、支持体１５には、正孔輸
送層１１，発光層１２，電子輸送層１３，及びカソード
電極１４が連続して成膜される。The hole transport layer vapor deposition device 111, the light emitting layer vapor deposition device 121, the electron transport layer vapor deposition device 131, and the cathode electrode vapor deposition device 141 are respectively composed of the hole transport layer 11, the light emitting layer 12, the electron transport layer 13, and the cathode electrode. After the film 14 is formed to a predetermined thickness, the support 15 is moved in the direction of the arrow by the reels 16, and the hole transport layer 11, the light emitting layer 12, and the electron transport layer 13 are provided on the support 15. , And the cathode electrode 14 are continuously formed.
【００４６】このように、１つの支持体１５に連続して
正孔輸送層蒸着装置１１１，発光層蒸着装置１２１，電
子輸送層蒸着装置１３１，及びカソード電極蒸着装置１
４１で同時に蒸着することにより、従来のように各蒸着
装置で、別々の期間に蒸着する製造方法に比べてスルー
プットを向上することができる。本実施形態では、支持
体１５が、正孔輸送層蒸着装置１１１，発光層蒸着装置
１２１，電子輸送層蒸着装置１３１，及びカソード電極
蒸着装置１４１の上方をリール１６、１６により移動す
る速度は同じであるため、蒸着の間に支持体１５を移動
している場合は、蒸着する材料の蒸着速度に応じて正孔
輸送層蒸着装置１１１，発光層蒸着装置１２１，電子輸
送層蒸着装置１３１，カソード電極蒸着装置１４１のそ
れぞれの蒸着面の矢印方向の距離を設定すればよい。例
えばカソード電極蒸着装置１４１がカソード電極１４を
所定の膜厚にするための蒸着速度が、電子輸送層蒸着装
置１３１が電子輸送層１３を所定の膜厚にするための蒸
着速度の半分であれば、カソード電極蒸着装置１４１の
支持体１５への蒸着面の矢印方向の距離を電子輸送層蒸
着装置１３１の支持体１５への蒸着面の矢印方向の距離
の二倍にすれば、カソード電極１４及び電子輸送層１３
をそれぞれ最適の厚さに成膜することができる。なお、
基板１０の通過速度はすべての部分で一定であるため、
正孔輸送層蒸着装置１１１，発光層蒸着装置１２１，電
子輸送層蒸着装置１３１，カソード電極蒸着装置１４１
の各加熱手段の出力を調節することにより、各坩堝の厚
さを制御して正孔輸送層１１，発光層１２，電子輸送層
１３，カソード電極１４をそれぞれ所定の厚さに堆積し
てもよい。As described above, the hole transport layer vapor deposition device 111, the light emitting layer vapor deposition device 121, the electron transport layer vapor deposition device 131, and the cathode electrode vapor deposition device 1
By performing the vapor deposition simultaneously at 41, the throughput can be improved in each vapor deposition apparatus as compared with the conventional manufacturing method in which the vapor deposition is performed in different periods. In the present embodiment, the speed at which the support 15 moves above the hole transport layer vapor deposition device 111, the light emitting layer vapor deposition device 121, the electron transport layer vapor deposition device 131, and the cathode electrode vapor deposition device 141 by the reels 16 is the same. Therefore, when the support 15 is moved during the vapor deposition, the hole transport layer vapor deposition device 111, the light emitting layer vapor deposition device 121, the electron transport layer vapor deposition device 131, the cathode What is necessary is just to set the distance of each vapor deposition surface of the electrode vapor deposition apparatus 141 in the direction of the arrow. For example, if the vapor deposition rate for the cathode electrode vapor deposition apparatus 141 to make the cathode electrode 14 have a predetermined thickness is half of the vapor deposition rate for the electron transport layer vapor deposition apparatus 131 to make the electron transport layer 13 a predetermined thickness. If the distance in the direction of the arrow on the deposition surface of the cathode electrode deposition apparatus 141 to the support 15 is twice the distance in the direction of the arrow of the deposition surface on the support 15 of the electron transport layer deposition apparatus 131, the cathode electrode 14 and Electron transport layer 13
Can be formed into the respective optimum thicknesses. In addition,
Since the passing speed of the substrate 10 is constant in all parts,
Hole transport layer deposition device 111, light emitting layer deposition device 121, electron transport layer deposition device 131, cathode electrode deposition device 141
By adjusting the output of each heating means, the thickness of each crucible is controlled to deposit the hole transport layer 11, the light emitting layer 12, the electron transport layer 13, and the cathode electrode 14 to a predetermined thickness. Good.
【００４７】次に、図１（Ｃ）に示す、支持体１５を用
いて、基板１０上の正孔輸送層１１，発光層１２，電子
輸送層１３，カソード電極１４の不要部分を基板１０上
から除去する。Next, unnecessary portions of the hole transport layer 11, the light emitting layer 12, the electron transport layer 13, and the cathode electrode 14 on the substrate 10 are placed on the substrate 10 by using the support 15 shown in FIG. Remove from
【００４８】すなわち、図３に示すように、基板１０と
支持体１５とを、基板１０上のカソード電極１４と支持
体１５表部に設けた接着層１５ａとが対向するように配
置する。ここで、接着層１５ａは熱軟化性樹脂または、
後述する加熱されたサーマルヘッド２１の熱でも接着性
が失われない樹脂により形成され、また、その接着力
は、サーマルヘッド２１とほぼ同温度で離型層２３より
も強く、かつ、離型層２３を除いた正孔輸送層１１〜カ
ソード電極１４間のすべての部分よりも弱いものとす
る。That is, as shown in FIG. 3, the substrate 10 and the support 15 are arranged such that the cathode electrode 14 on the substrate 10 and the adhesive layer 15a provided on the surface of the support 15 face each other. Here, the adhesive layer 15a is made of a thermosoftening resin or
The thermal head 21 is formed of a resin that does not lose its adhesiveness even when heated by the heat of the thermal head 21. The adhesive strength is higher than that of the release layer 23 at substantially the same temperature as that of the thermal head 21. It is assumed that it is weaker than all portions between the hole transport layer 11 and the cathode electrode 14 except 23.
【００４９】次に、基板１０と支持体１５を、サーマル
ヘッド２１とローラー２２との間に挟む。ここで、支持
体１５の接着層１５ａは、サーマルヘッド２１により加
熱されて接着性を発揮するため、カソード電極１４と支
持体１５とは接着する。Next, the substrate 10 and the support 15 are sandwiched between the thermal head 21 and the roller 22. Here, since the adhesive layer 15a of the support 15 is heated by the thermal head 21 to exhibit adhesiveness, the cathode electrode 14 and the support 15 are bonded.
【００５０】その後、サーマルヘッド２１とローラー２
２と重ならないところでは、基板１０と支持体１５の復
元力により基板１０と支持体１５は再び互いに離れる。Thereafter, the thermal head 21 and the roller 2
2 and the support 15 are separated from each other again by the restoring force of the substrate 10 and the support 15.
【００５１】ここで、カソード電極１４と支持体１５と
は接着しているため、離型層２３を有する部分において
は最も結合力の弱い離型層２３を境に、また、他の部
分、つまり接着層１５ａがカソード電極１４と接触して
いない部分においては正孔輸送層１１〜カソード電極１
４が剥離せずに基板１０と支持体１５は離れる。すなわ
ち、基板１０上の正孔輸送層１１，発光層１２，電子輸
送層１３，カソード電極１４の不要部分及び剥離離型層
２５は図１（Ｄ）に示すように、基板１０上から除去さ
れ、支持体１５に貼り付けられる。また、サーマルヘッ
ド２１の熱は正孔輸送層１１〜カソード電極１４にも加
わり、正孔輸送層１１〜カソード電極１４が柔らかくな
り、正孔輸送層１１〜カソード電極１４を厚さ方向によ
り分割しやすいような作用ももたらす。ここで、アノー
ド電極取り出し部１０ｄ上には離型層２３が形成され、
また、カソード電極取り出し部１０ｅ上には離型層２３
は形成されていないため、図１（Ｄ）に示すように、ア
ノード電極取り出し部１０ｄからはアノード電極１０ａ
が、カソード電極取り出し部１０ｅからはカソード電極
１４が、それぞれ露出する。なお、耐熱滑性層１５ｂの
存在により、基板１０はサーマルヘッド２１には付着し
ない。Here, since the cathode electrode 14 and the support 15 are adhered to each other, the portion having the release layer 23 is separated by the release layer 23 having the weakest bonding force, and another portion, that is, In portions where the adhesive layer 15a is not in contact with the cathode electrode 14, the hole transport layers 11 to the cathode electrode 1
The substrate 10 and the support body 15 are separated without the peeling of the substrate 4. That is, the unnecessary portions of the hole transport layer 11, the light emitting layer 12, the electron transport layer 13, the cathode electrode 14, and the release layer 25 on the substrate 10 are removed from the substrate 10 as shown in FIG. Is attached to the support 15. Further, the heat of the thermal head 21 is also applied to the hole transport layers 11 to the cathode electrodes 14, so that the hole transport layers 11 to the cathode electrodes 14 are softened, and the hole transport layers 11 to the cathode electrodes 14 are divided in the thickness direction. It also provides an easy action. Here, a release layer 23 is formed on the anode electrode extraction portion 10d,
A release layer 23 is provided on the cathode electrode take-out part 10e.
Is not formed, as shown in FIG. 1 (D), the anode electrode 10a
However, the cathode electrode 14 is exposed from the cathode electrode extraction portion 10e. The substrate 10 does not adhere to the thermal head 21 due to the presence of the heat-resistant lubricating layer 15b.
【００５２】次に、図１（Ｅ）に示す点線で囲まれた領
域を封止して、有機ＥＬ発光部１は完成する。この結
果、図４に示すように、有機ＥＬ発光部１は、同図
（Ｃ）に示す基板１０上に、同図（Ｂ）に示す、アノー
ド電極１０ａと、層間絶縁層１０ｂと、同図（Ａ）に示
す支持体１５およびサーマルヘッド２１により加熱され
て不要部分を除去した正孔輸送層１１，発光層１２，電
子輸送層１３，カソード電極１４と、を積層した構造と
なる。また、アノード電極取り出し部１０ｄおよびカソ
ード電極取り出し部１０ｅは前記点線領域外に位置す
る。そして、基板１０上に縦横に複数列配置された有機
ＥＬ発光部１は、基板１０をスクライブして個々に分割
して形成される。Next, the region surrounded by the dotted line shown in FIG. 1E is sealed to complete the organic EL light emitting section 1. As a result, as shown in FIG. 4, the organic EL light-emitting portion 1 has an anode electrode 10a, an interlayer insulating layer 10b, and a substrate 10 shown in FIG. A structure in which the hole transport layer 11, the light emitting layer 12, the electron transport layer 13, and the cathode electrode 14, which are heated by the support 15 and the thermal head 21 to remove unnecessary portions shown in FIG. Further, the anode electrode take-out part 10d and the cathode electrode take-out part 10e are located outside the dotted line region. Then, the organic EL light emitting units 1 arranged in a plurality of rows and columns on the substrate 10 are formed by dividing the substrate 10 into individual parts.
【００５３】以上より、本発明の実施の形態例によれ
ば、基板１０のアノード電極１０ａ上に、印刷によりと
層間絶縁層１０ｂをパターンに形成した後に、正孔輸送
層１１，発光層１２，電子輸送層１３，カソード電極１
４を、この順序通りに、メタルマスクを用いない真空蒸
着法により基板１０の表面の先端・終端を除いた全面に
積層する。続いて、基板１０と支持体１５とを、カソー
ド電極１４と接着層１５ａとが対向するように貼り合わ
せ、サーマルヘッド２１を用いて熱を加えることにより
正孔輸送層１１，発光層１２，電子輸送層１３，カソー
ド電極１４の不要部分を支持体１５に付着して除去する
ことにより、有機ＥＬ発光部１を作製する。すなわち、
有機ＥＬ発光部１の作製工程において、正孔輸送層１
１，発光層１２，電子輸送層１３，カソード電極１４の
パターニングの際にメタルマスクを真空中にて用いない
ため、離型層２３を印刷形成するだけで、各層毎に高精
度な位置合わせを行う必要はなく、従って、生産装置一
つあたりの単位時間あたりの生産量、すなわちスループ
ットは従来と比べて大幅に向上するため、有機ＥＬ素子
の製造コストを下がる。また、基板１０の上のアノード
電極１０ａと層間絶縁層１０ｂとは、複数の有機ＥＬ発
光部１に対応するように設けられるので、正孔輸送層１
１，発光層１２，電子輸送層１３，カソード電極１４の
不要部分を支持体１５に付着して除去する効率はさらに
向上する。従って、有機ＥＬ素子の製造コストをさらに
下がる。As described above, according to the embodiment of the present invention, after the interlayer insulating layer 10b is formed in a pattern on the anode electrode 10a of the substrate 10 by printing, the hole transport layer 11, the light emitting layer 12, Electron transport layer 13, cathode electrode 1
4 are laminated in this order on the entire surface of the substrate 10 except for the top and bottom ends by a vacuum deposition method without using a metal mask. Subsequently, the substrate 10 and the support 15 are attached so that the cathode electrode 14 and the adhesive layer 15a are opposed to each other, and heat is applied using a thermal head 21 so that the hole transport layer 11, the light emitting layer 12, the electron Unnecessary portions of the transport layer 13 and the cathode electrode 14 are adhered to the support 15 and removed, thereby producing the organic EL light emitting section 1. That is,
In the manufacturing process of the organic EL light emitting section 1, the hole transport layer 1
1, since the metal mask is not used in a vacuum when patterning the light emitting layer 12, the electron transport layer 13, and the cathode electrode 14, high-precision alignment can be performed for each layer only by printing and forming the release layer 23. It is not necessary to perform the process, and therefore, the production amount per unit time per production apparatus, that is, the throughput is greatly improved as compared with the related art, so that the manufacturing cost of the organic EL element is reduced. Further, since the anode electrode 10 a and the interlayer insulating layer 10 b on the substrate 10 are provided so as to correspond to the plurality of organic EL light emitting units 1, the hole transport layer 1
1, the efficiency of removing unnecessary portions of the light emitting layer 12, the electron transport layer 13, and the cathode electrode 14 by attaching to the support 15 is further improved. Therefore, the manufacturing cost of the organic EL element is further reduced.
【００５４】さらに、層間絶縁層１０ｂを設けたので、
離型層２３の印刷領域、すなわち正孔輸送層１１〜カソ
ード電極１４の除去領域が多少ずれても、アノード電極
１０ａとカソード電極１４とは短絡しない。また、アノ
ード電極取り出し部１０ｄおよびカソード電極取り出し
部１０ｅは前記点線領域外に位置するため、アノード電
極１０ａおよびカソード電極１４は外部端子と容易に接
続できる。Further, since the interlayer insulating layer 10b is provided,
Even if the printing area of the release layer 23, that is, the removal area of the hole transport layer 11 to the cathode electrode 14 is slightly shifted, the anode electrode 10a and the cathode electrode 14 are not short-circuited. Further, since the anode electrode take-out part 10d and the cathode electrode take-out part 10e are located outside the dotted line region, the anode electrode 10a and the cathode electrode 14 can be easily connected to external terminals.
【００５５】さらに、支持体１５の接着層１５ａの接着
力を、正孔輸送層１１〜カソード電極１４間のいずれの
部分の強度よりも強くし、かつ、サーマルヘッド２１に
微細パターン加工を施して支持体１５の不必要な部分の
み加熱して接着性を発揮させ、正孔輸送層１１〜カソー
ド電極１４の前記不必要な部分を除去することにより、
微細な構造を有する有機ＥＬ発光部の作製できる。Further, the adhesive strength of the adhesive layer 15a of the support 15 is made stronger than the strength of any part between the hole transport layer 11 and the cathode electrode 14, and the thermal head 21 is subjected to fine pattern processing. By heating only unnecessary portions of the support body 15 to exhibit adhesiveness and removing the unnecessary portions of the hole transport layer 11 to the cathode electrode 14,
An organic EL light emitting portion having a fine structure can be manufactured.
【００５６】なお、本発明は、上述した実施の形態例に
限定されるものではなく、本発明の趣旨を逸脱しない範
囲で任意に変形してもよい。例えば、支持体１５を加熱
する部分は全面である必要はなく、離型層２３を塗布し
た部分に限定してもよい。この場合は、より確実に、正
孔輸送層１１〜カソード電極１４の不要部分のみを、必
要部分に影響を与えることなく剥離できる。Note that the present invention is not limited to the above-described embodiment, and may be arbitrarily modified without departing from the gist of the present invention. For example, the portion where the support 15 is heated need not be the entire surface, but may be limited to the portion where the release layer 23 is applied. In this case, only the unnecessary portions of the hole transport layer 11 to the cathode electrode 14 can be more reliably peeled off without affecting the necessary portions.
【００５７】また、正孔輸送層１１，発光層１２，電子
輸送層１３，カソード電極１４を十分正確に転写できる
場合は、層間絶縁層１０ｂを設ける必要はない。すなわ
ち、図５に示すように、離型層２３は、残存離型層２４
と剥離離型層２５とに分断し、残存離型層２４上の正孔
輸送層１１〜カソード電極１４は、支持体１５に貼り付
けられる。この場合は、アノード電極１０の周縁部をな
だらかなテーパーを有するように加工するほうが好まし
い。また、接着層１５ａの接着力は、加熱されたサーマ
ルヘッド２１とほぼ同温度で離型層２３よりも強く、か
つ、離型層２３を除いた正孔輸送層１１〜カソード電極
１４間のすべての部分よりも弱く、かつ正孔輸送層１１
〜カソード電極１４をそれらの厚さ方向に分断できる程
度のものとする。さらに、発光素子は有機ＥＬを用いた
素子に限定する必要はなく、当然、積層構造を有する他
の発光素子に適用することも可能である。If the hole transport layer 11, the light emitting layer 12, the electron transport layer 13, and the cathode electrode 14 can be transferred sufficiently accurately, it is not necessary to provide the interlayer insulating layer 10b. That is, as shown in FIG. 5, the release layer 23 is
And the release layer 25, and the hole transport layer 11 to the cathode electrode 14 on the remaining release layer 24 are attached to the support 15. In this case, it is preferable to process the periphery of the anode electrode 10 so as to have a gentle taper. The adhesive force of the adhesive layer 15a is stronger than that of the release layer 23 at substantially the same temperature as that of the heated thermal head 21, and all of the adhesive between the hole transport layer 11 and the cathode electrode 14 excluding the release layer 23 is formed. And the hole transport layer 11
The cathode electrode 14 is of such a size that it can be divided in the thickness direction thereof. Further, the light-emitting element does not need to be limited to an element using an organic EL, but can be applied to another light-emitting element having a laminated structure.
【００５８】また、薄膜連続形成装置２は、図２（Ｂ）
のように、シート状の基板１８，１８・・・を、ソータ
ー１９ａ，１９ｂおよび基板１８の周縁の非発光領域で
基板１８を支持し、発光領域が開口されたベルトコンベ
ア（図示省略）により輸送する形状に変形してもよい。
この場合は、基板１０をロール状に巻く必要はないの
で、シート抵抗を低くするため、例えばＩＴＯからなる
アノード電極１０ａを厚く堆積しても、アノード電極１
０ａは割れることはない。 本実施形態では、サーマル
ヘッド２１を加熱して圧着したが、接着層１５ａが常温
でも十分な粘着性があれば、サーマルヘッド２１の替わ
りに加熱しない部材で押圧して正孔輸送層１１〜カソー
ド電極１４を接着層１５ａに貼り付けても良い。Further, the thin film continuous forming apparatus 2 is shown in FIG.
Are transported by a belt conveyor (not shown) which supports the substrate 18 in the sorter 19a, 19b and the non-light-emitting region on the periphery of the substrate 18 and has an open light-emitting region. It may be deformed to a shape that does.
In this case, since it is not necessary to wind the substrate 10 in a roll shape, even if the anode electrode 10a made of, for example, ITO is deposited thick to reduce the sheet resistance, the anode electrode 1
0a does not break. In the present embodiment, the thermal head 21 is heated and pressed. However, if the adhesive layer 15a has sufficient tackiness even at room temperature, the thermal head 21 is pressed by a non-heated member instead of the thermal head 21 to form the hole transport layer 11 to the cathode. The electrode 14 may be attached to the adhesive layer 15a.
【００５９】[0059]
【発明の効果】例えば発光部の作製において、メタルマ
スクの位置合わせを高精度に行う回数は従来と比べて減
少するため、生産装置一つあたりの単位時間あたりの生
産量、すなわちスループットは従来と比べて大幅に向上
して、発光素子の製造コストを下げることができる。さ
らに、例えば液晶表示装置のバックライトなど、微細構
造を有さない発光素子の発光部を作製する場合は、前記
複数の層の一部は印刷によってそれぞれのパターンに積
層できるため、複数の層の他部を形成するためのメタル
マスクを全く用いずに発光部を作製できる。According to the present invention, for example, in the production of the light emitting portion, the number of times of performing the metal mask alignment with high precision is reduced as compared with the conventional case, so that the production amount per unit of production equipment per unit time, that is, the throughput is the same as the conventional case. This significantly improves the manufacturing cost of the light emitting element. Further, for example, when manufacturing a light-emitting portion of a light-emitting element having no fine structure, such as a backlight of a liquid crystal display device, a part of the plurality of layers can be laminated on each pattern by printing. The light emitting section can be manufactured without using any metal mask for forming another section.
【図１】本発明の一実施の形態例である、有機ＥＬ発光
部１の製造方法の概略を説明する概略図である。FIG. 1 is a schematic diagram illustrating an outline of a method for manufacturing an organic EL light emitting unit 1, which is an embodiment of the present invention.
【図２】予めアノード電極１０ａ，層間絶縁層１０ｂを
それぞれのパターンに積層した基板１０上に、正孔輸送
層１１，発光層１２，電子輸送層１３，カソード電極１
４を形成する薄膜連続形成装置２の構成および動作を説
明する概略図である。FIG. 2 shows a hole transport layer 11, a light emitting layer 12, an electron transport layer 13, and a cathode electrode 1 on a substrate 10 on which an anode electrode 10a and an interlayer insulating layer 10b are previously laminated in respective patterns.
4 is a schematic diagram illustrating a configuration and an operation of a continuous thin film forming apparatus 2 that forms a thin film 4; FIG.
【図３】基板１０の表部に形成された、層間絶縁層１０
ｂ上の離型層２３上に形成された正孔輸送層１１，発光
層１２，電子輸送層１３，カソード電極１４を、支持体
１５の上に転写する方法を説明する概略図である。FIG. 3 shows an interlayer insulating layer 10 formed on the surface of the substrate 10;
FIG. 9 is a schematic diagram illustrating a method of transferring the hole transport layer 11, the light emitting layer 12, the electron transport layer 13, and the cathode electrode 14 formed on the release layer 23 on the support 15 to the support 15;
【図４】図４（Ａ）は、サーマルヘッド２１により所定
箇所を熱転写された支持体１５を説明する概略図であ
り、図４（Ｂ）は、有機ＥＬ発光部１の積層構造を説明
する概略図であり、図４（Ｃ）は、サーマルヘッド２１
により所定箇所に熱転写された基板１０を説明する概略
図である。FIG. 4A is a schematic diagram illustrating a support body 15 in which a predetermined portion is thermally transferred by a thermal head 21. FIG. 4B illustrates a stacked structure of the organic EL light emitting unit 1. FIG. 4C is a schematic view, and FIG.
FIG. 3 is a schematic diagram illustrating a substrate 10 thermally transferred to a predetermined location by using FIG.
【図５】基板１０の表部に形成された、離型層２３上に
形成された正孔輸送層１１，発光層１２，電子輸送層１
３，カソード電極１４を、支持体１５の上に転写する方
法を説明する概略図である。FIG. 5 shows a hole transport layer 11, a light emitting layer 12, and an electron transport layer 1 formed on a release layer 23, which are formed on a surface portion of a substrate 10.
3 is a schematic diagram illustrating a method of transferring the cathode electrode 14 onto the support 15.
１ 有機ＥＬ発光部
（発光部） ２ 薄膜連続形成装置 １０ 基板 １０ａ アノード電極（複
数の層の一部） １０ｂ 層間絶縁層（複数
の層の一部） １０ｄ アノード電極取り
出し部 １０ｅ カソード電極取り
出し部 １１ 正孔輸送層（複数
の層の他部） １２ 発光層（複数の層
の他部） １３ 電子輸送層（複数
の層の他部） １４ カソード電極（複
数の層の他部） １５ 支持体 １６ リール １７ 隔壁 ２１ サーマルヘッド ２２ ローラー ２３ 離型層 １００ 真空チャンバーDESCRIPTION OF SYMBOLS 1 Organic EL light emission part (light emission part) 2 Thin film continuous formation apparatus 10 Substrate 10a Anode electrode (part of several layers) 10b Interlayer insulating layer (part of several layers) 10d Anode extraction part 10e Cathode extraction part 11 Hole transport layer (other parts of plural layers) 12 Light emitting layer (other parts of plural layers) 13 Electron transport layer (other parts of plural layers) 14 Cathode electrode (other parts of plural layers) 15 Support 16 Reel 17 Partition wall 21 Thermal head 22 Roller 23 Release layer 100 Vacuum chamber
Claims (7)
数の層から構成される発光部を有する発光素子の製造方
法において、 前記基板上に形成された前記複数の層の一部の上のう
ち、所定部分に剥離あるいは分断容易な物質からなる離
型層を積層し、 前記複数の層の他部を、前記離型層および前記複数の層
の一部の上に積層した後、 前記複数の層の上に接着性の支持体を貼着し、前記複数
の層の他部の前記離型層の上に積層した部分を剥離させ
ること、 を工程中に含むことを特徴とする発光素子の製造方法。1. A method of manufacturing a light-emitting element having a light-emitting portion composed of a plurality of layers laminated in a predetermined pattern on a substrate, wherein a part of the plurality of layers formed on the substrate is Of the above, a release layer made of a substance that can be easily separated or separated is laminated on a predetermined portion, and the other part of the plurality of layers is laminated on a part of the release layer and the plurality of layers. Adhering an adhesive support on the plurality of layers, and peeling off a portion of the other portions of the plurality of layers laminated on the release layer. Device manufacturing method.
て、 前記複数の層の他部は、カソード電極を含んでおり、 前記複数の層の一部は、アノード電極と、前記カソード
電極と前記アノード電極との短絡を防ぐ層間絶縁膜とを
含むこと、 を特徴とする発光素子の製造方法。2. The method according to claim 1, wherein the other part of the plurality of layers includes a cathode electrode, and a part of the plurality of layers includes an anode electrode and the cathode electrode. A method for manufacturing a light emitting device, comprising: an interlayer insulating film for preventing a short circuit with the anode electrode.
て、 前記アノード電極の外部端子接続部に対応する部分に
は、前記層間絶縁膜を形成せず、かつ、前記離型層を形
成し、 前記カソード電極の外部端子接続部に対応する部分には
前記離型層を形成しないこと、 を特徴とする発光素子の製造方法。3. The method for manufacturing a light emitting device according to claim 2, wherein the interlayer insulating film is not formed and the release layer is formed in a portion corresponding to an external terminal connecting portion of the anode electrode. A method for manufacturing a light-emitting element, wherein the release layer is not formed on a portion corresponding to an external terminal connection portion of the cathode electrode.
光素子の製造方法において、 前記支持体は加熱により接着性を発揮するか、加熱して
も接着性が失われない部材からなり、 前記複数の層に貼り合わせ、さらに加熱して前記複数の
層の上に貼着した後に、前記複数の層から剥がされるこ
と、 を特徴とする発光素子の製造方法。4. The method for manufacturing a light-emitting device according to claim 1, wherein the support exhibits adhesiveness by heating, or the support does not lose adhesiveness even when heated. A method for manufacturing a light-emitting element, comprising: laminating to a plurality of layers, heating and bonding the layers to the plurality of layers, and then peeling off the plurality of layers.
いて、 前記支持体は加熱手段により加熱され、前記支持体の加
熱側には、前記支持体と前記加熱手段との接着を防止す
るための耐熱層を設けること、 を特徴とする発光素子の製造方法。5. The method for manufacturing a light emitting device according to claim 4, wherein the support is heated by a heating unit, and the heating side of the support prevents adhesion between the support and the heating unit. Providing a heat-resistant layer for the light-emitting device.
光素子の製造方法において、 前記基板の一面を、一つの真空空間内に別個に配置され
た複数の材料蒸発源にさらすことにより、前記複数の層
の他部を形成すること、を特徴とする発光素子の製造方
法。6. The method for manufacturing a light emitting device according to claim 1, wherein one surface of the substrate is exposed to a plurality of material evaporation sources separately arranged in one vacuum space. Forming the other part of the plurality of layers by the method described above.
光素子の製造方法において、 前記発光素子は、有機エレクトロルミネッセンス素子で
あることを特徴とする発光素子の製造方法。7. The method for manufacturing a light emitting device according to claim 1, wherein said light emitting device is an organic electroluminescence device.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33276398A JP4253883B2 (en) | 1998-11-24 | 1998-11-24 | Method for manufacturing light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33276398A JP4253883B2 (en) | 1998-11-24 | 1998-11-24 | Method for manufacturing light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000164353A true JP2000164353A (en) | 2000-06-16 |
| JP4253883B2 JP4253883B2 (en) | 2009-04-15 |
Family
ID=18258577
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33276398A Expired - Lifetime JP4253883B2 (en) | 1998-11-24 | 1998-11-24 | Method for manufacturing light emitting device |
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| Country | Link |
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