JP2011105962A - Vacuum vapor-deposition apparatus, vacuum vapor-deposition method, and method for manufacturing organic el display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vacuum vapor-deposition apparatus and a film-forming apparatus which can rapidly form a thin film having a uniform film thickness and containing few impurities on a large substrate and can be continuously operated for long hours. <P>SOLUTION: The substrate 1 on which an organic EL layer is formed is vertically set in a vapor-deposition chamber 5, and a fine metal mask 4 for selectively vapor-depositing the organic EL layer is arranged on the substrate 1. An evaporation source 8 which becomes a material of the organic EL layer is arranged outside the vapor-deposition chamber. An evaporation head 3 in which nozzles are lineally arranged and the evaporation source 8 are connected by a soft tube 7. The organic EL layer is vapor-deposited on the substrate 1 by moving the evaporation head 3 in a direction orthogonal to the nozzle-arranged direction. By connecting the evaporation head 3 and the evaporation source 9 with the soft tube 7, it becomes possible to move only the evaporation head 3, to simplify a mechanism of the apparatus, and to prevent the contamination of the organic EL layer due to impurities produced in the movable mechanism. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a method and apparatus for forming a vacuum deposition film, and more particularly to a vacuum deposition method and apparatus effective for forming an organic EL display device on a large substrate.

  An organic EL element used in an organic EL display device or a lighting device has a structure in which an organic layer made of an organic material is sandwiched between a pair of electrodes of an anode and a cathode from above and below, and holes are applied from the anode side by applying a voltage to the electrodes. However, electrons are injected into the organic layer from the cathode side, and they recombine to emit light.

  This organic layer has a structure in which a multilayer film including a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer is laminated. There are materials using a high molecular material and a low molecular material as a material for forming the organic layer. Among these, when using a low molecular weight material, an organic thin film is formed using a vacuum evaporation apparatus.

  The characteristics of the organic EL device are greatly affected by the film thickness of the organic layer. On the other hand, the substrate on which the organic thin film is formed has become larger year by year. Therefore, when using a vacuum vapor deposition apparatus, it is necessary to control the film thickness of the organic thin film formed on a large sized substrate with high precision.

  As a configuration in which a thin film is formed on a large substrate by vacuum deposition, Patent Document 1 (Japanese Patent Laid-Open No. 2003-293140) includes an evaporation source that can be moved using the expansion and contraction of a vacuum bellows in order to deposit a vapor phase organic substance. A vacuum deposition apparatus is disclosed. Patent Document 2 (Japanese Patent Application Laid-Open No. 2005-36296) discloses a vacuum evaporation apparatus for holding a large substrate horizontally and forming a thin film on the substrate using an evaporation source having a crucible installed outside the evaporation apparatus. Is disclosed. Patent Document 3 (Japanese Patent Application Laid-Open No. 2003-347047) discloses a vacuum deposition apparatus that holds a large substrate vertically and forms a thin film on the substrate using an evaporation source having a plurality of crucibles. ing.

JP 2003-293140 A JP-A-2005-36296 JP 2003-347047 A

  Japanese Patent Laid-Open No. 2004-133867 separates a portion (evaporation source) that vaporizes an organic material and an evaporation head (linear source) that sprays the organic material onto the substrate, and allows the evaporation head to be moved using expansion and contraction of a vacuum bellows (bellows). Thus, it is compatible with large substrates. The evaporation head has a structure in which a plurality of nozzles arranged in a line are provided, and is configured to form an organic thin film on a large glass substrate by moving in a direction perpendicular to the direction in which the nozzles are arranged.

  However, since the movement of the vacuum bellows in only one direction of expansion and contraction is used, the movement distance from one end to the other in one direction of the glass substrate increases, and it is necessary to simultaneously move the evaporation source that vaporizes the organic material. The device becomes large. Moreover, no consideration is given to the generation of dust accompanying movement in a vacuum.

  In Patent Document 2, an evaporation source for vaporizing an organic material and an evaporation head for depositing the organic material on a substrate are separated, and a valve is provided between them, and the valve is closed when vapor deposition is unnecessary, thereby improving the use efficiency of the organic material. I am letting. However, there is no disclosure of means for increasing the size of the substrate.

  Patent Document 3 describes that a plurality of evaporation sources are fixedly installed in a film forming chamber, and the substrate is slid and moved to form a film on the entire surface of the substrate. However, there is no disclosure of means for switching materials, continuous operation, and means for preventing dust generation in the substrate moving mechanism.

  The object of the present invention is to solve the above-described problems of the prior art and to form an organic thin film on a large-sized substrate at high speed using an evaporation source provided with a plurality of nozzles arranged in a line, and to prevent contamination. Furthermore, the present invention is to provide a vacuum deposition method and apparatus capable of continuous film formation.

  The present invention separates the evaporation source that vaporizes the organic material and the evaporation head that deposits the organic material onto the substrate, and uses the soft construction of the piping of the evaporation source and the evaporation head, that is, the effect of expansion and contraction and bending of the vacuum bellows. The most important feature is that an evaporation head movable in the vapor deposition chamber is realized and a contamination prevention mechanism is installed.

  According to the present invention, it is possible to deposit an organic material on a large substrate at a high speed and with a high yield. In the present invention, the driving in the vacuum is realized by the driving mechanism on the atmosphere side through the vacuum bellows, so that the contaminant generation in the vacuum is mainly the metal contamination generated when the vacuum bellows expands and contracts. Therefore, there are few contaminants compared with the conventional vapor deposition method.

  Further, according to the present invention, only the evaporation head may be moved in the vacuum evaporation chamber. In the conventional method, it is necessary to move the evaporation source and the evaporation head at the same time. Therefore, the structure to be moved becomes 500 kg to 1000 kg, and the moving mechanism becomes large. According to the present invention, since only the evaporation head has to be moved, the moving mechanism is simplified, and the manufacturing cost and maintenance cost of the vapor deposition apparatus can be greatly reduced.

  Moreover, according to one aspect of the present invention, iron alloy-based metal contaminants can be removed with a magnet, and contamination of the organic thin film can be prevented. Therefore, by using the apparatus of the present invention, there is an advantage that a long-life device with less contaminants can be provided.

  According to still another aspect of the present invention, high-speed film formation can be realized by using a plurality of evaporation sources and evaporation heads. By using a plurality of evaporation sources and installing and switching valves between the evaporation sources, continuous film formation can be performed.

It is a figure explaining the operation | movement with the schematic diagram of a structure of the vapor deposition chamber, the evaporation head, the evaporation source, and the board | substrate in the 1st Example of this invention. It is the cross-sectional schematic diagram explaining the schematic diagram and operation | movement of a vapor deposition chamber, the evaporation head, an evaporation source, and a board | substrate structure in the 2nd Example of this invention. It is the cross-sectional schematic diagram explaining the schematic diagram and operation | movement of a structure of the vapor deposition chamber, the evaporation head, the evaporation source, and the board | substrate in the 3rd Example of this invention. It is the cross-sectional schematic diagram explaining the schematic diagram and operation | movement of the structure of the vapor deposition chamber, the evaporation head, the evaporation source, and the board | substrate in the 4th Example of this invention. It is a perspective view which shows the structure which improves the throughput of a vapor deposition process. It is the perspective view explaining the schematic diagram and operation | movement of a structure of the vapor deposition chamber, the evaporation head, the evaporation source, and the board | substrate in the 4th Example of this invention. It is the cross-sectional schematic diagram explaining the schematic diagram and operation | movement of a vapor deposition chamber, the evaporation head, an evaporation source, and a board | substrate structure in the 5th Example of this invention. It is the cross-sectional schematic diagram explaining the schematic diagram and operation | movement of the structure of the vapor deposition chamber, the evaporation head, the evaporation source, and the board | substrate in the other aspect of the 5th Example of this invention. It is the cross-sectional schematic diagram explaining the schematic diagram and operation | movement of the structure of the vapor deposition chamber, the evaporation head, the evaporation source, and the board | substrate in the 6th Example of this invention. It is the cross-sectional schematic diagram explaining the schematic diagram and operation | movement of a structure of the vapor deposition chamber and the evaporation head in the 7th Example of this invention, an evaporation source, and a board | substrate. It is the cross-sectional schematic diagram explaining the schematic diagram and operation | movement of a vapor deposition chamber, an evaporation head, an evaporation source, and a board | substrate in other aspects of the 7th Example of this invention. It is process drawing which showed an example of the organic electroluminescent display production process in the 8th Example of this invention.

  As an example of the vacuum deposition apparatus according to the present invention, an example applied to the manufacture of an organic EL device will be described. Organic EL device manufacturing equipment has a hole injection layer, a hole transport layer, a light emitting layer (organic film layer) on the anode, and a thin film layer of various materials such as an electron injection layer and an electron transport layer on the cathode. It is an apparatus that forms multiple layers by vacuum deposition.

  An organic EL device manufacturing apparatus according to the present invention includes an evaporation head (linear source) for evaporating a material through a plurality of nozzles arranged linearly in a vacuum deposition unit, an evaporation source for evaporating an organic material, and an evaporation source It is characterized by a soft pipe for transporting the material to the evaporation head. Hereinafter, the contents of the present invention will be described in detail with reference to examples and drawings.

  FIG. 1 is a longitudinal sectional view of a vapor phase organic material vapor deposition apparatus according to the present invention. The vapor phase organic material vapor deposition apparatus of this embodiment includes a vapor deposition chamber 5 for depositing an organic material on a base material, an evaporation source 8 for heating the organic material to convert the state into a gas phase, and an injection unit for injecting the vapor phase organic material. A plurality of nozzles that are linearly arranged, a soft pipe 7 between the evaporation source 8 and the evaporation head 3, a vertical movement mechanism 16 that drives the operation of the evaporation head 3, the substrate 1 and the substrate And a substrate holder 15 for holding the substrate. In addition, although the inside of the vapor deposition chamber is a soft pipe 7, outside the vapor deposition chamber, a normal pipe can be used. However, also in this case, it is necessary that the piping can be heated.

  In the evaporation source 8, the organic material 8 in the container 81 is heated and vaporized by the heater 17. The container 81 is made of SUS, Ti, Mo, or the like. The inside of the evaporation source is heated to 200 ° C. to 400 ° C. by the heater 17 and the organic material 9 is vaporized.

  The evaporation head according to the first embodiment includes a heater for heating the nozzle portion, a water cooling jacket 10 for preventing the heat of the heater from being radiated to the substrate side, heat shielding plates 1301, 1302, and 1303, and ejected matter from the nozzle is thermally shielded. It consists of a barrier plate 14 for preventing adhesion to peripheral parts such as a plate. The vapor deposition chamber 5 includes an internal space that is isolated from the outside, and includes a substrate holding unit 15 that can fix the substrate 1 on which a vapor-phase organic substance is vapor-deposited on the floor surface of the internal space.

  Further, in the vapor deposition chamber 5, as shown in the upper left balloon diagram of FIG. 1, the evaporation head 3 has a structure in which a plurality of nozzles arranged in a line are provided, and in a direction perpendicular to the direction in which the nozzles are arranged. The organic thin film 2 is formed by ejecting the vaporized organic material 50 onto the substrate 1 by moving the substrate. Since the vertical movement mechanism 16 that drives the operation of the evaporation head 3 is blocked by the vacuum bellows 702, the vertical movement mechanism 16 can be operated in the atmosphere.

  A soft pipe 7 between the evaporation source 8 and the evaporation head 3 is vaporized during transportation in the pipe outside the pipe 12 and a soft pipe 12 (such as a flexible tube) for transporting the vacuum bellows 701 and the vaporized material. It comprises a heater 11 for heating the inner wall of the pipe so that the organic material is not adsorbed on the inner wall of the pipe, and a water cooling jacket 10 for blocking the heat coming out of the heater to the periphery.

  Since the soft piping 12, the heater 11, and the water cooling jacket 10 are separated from the vacuum atmosphere in the vapor deposition chamber 5 by the vacuum bellows 701, they can be handled by members used in general air. In the evaporation source 8, a heater 17 is installed in the vicinity in order to vaporize the organic material 9.

  The heating temperature of the evaporation head 3, the soft pipe 12, and the evaporation source 8 is determined according to the vapor pressure of a desired organic material. If the temperature is set so that the heating temperature of the evaporation head 3 ≧ the heating temperature of the soft pipe 12 ≧ the heating temperature of the evaporation source 8, it is possible to prevent the vaporized material from solidifying in the pipe until it is ejected from the nozzle. .

  Since the vacuum bellows 701 and 702 have a mechanical life, the vacuum bellows 701 and 702 can be separated so that they can be periodically replaced. Also, the vacuum bellows 701 and 702 can be made of metal such as stainless steel 400 series.

In the vapor deposition chamber 5, a metal fine mask 4 for vapor-depositing a light emitting material on a necessary portion of the substrate 1 is provided. And when vacuum deposition is implemented, the inside of the vacuum apparatus of the deposition chamber 5 is maintained in a high vacuum state of about 10 ⁻³ to 10 ⁻⁴ Pa by a vacuum exhaust pump (not shown). A substrate transfer unit is installed in a chamber (not shown) connected to the vapor deposition chamber of FIG. 1, and the substrate is transferred in this chamber. Therefore, the vapor deposition chamber of FIG. 1 can always maintain a vacuum state.

  In the first embodiment, the vacuum piping 701 is used for vacuum holding of the soft pipe 7 between the evaporation source 8 and the evaporation head 3 in the vapor deposition chamber 5, and the vertical movement mechanism 16 that drives the evaporation head 3 is the vacuum bellow 702. Was used to shut off the vacuum.

  In this embodiment, as shown in FIG. 2, by using a vertical movement mechanism 1601, a soft pipe 1201, a heater 1101, and a water cooling jacket 1001, which can be handled in a vacuum without using the vacuum bellows 701 and the vacuum bellows 702. The evaporation head 3 can be moved inside the vacuum apparatus. Since the vacuum bellows is not used, the structure inside the vapor deposition chamber 5 can be simplified. However, since many parts that can be handled in a vacuum are used, it is necessary to consider the mechanical life and cost of those parts.

  In the first embodiment, no consideration is given to a removal method when impurities are generated. In this embodiment, since it is known that impurities generated in the vacuum are mainly caused by the heating mechanism and the moving mechanism part, the heating mechanism and the moving mechanism part are arranged on the atmosphere side outside the deposition chamber 5 by using the vacuum bellows. It is installed. Therefore, the main impurities generated in the vacuum are metal powders that come out from the vacuum bellows.

By using a member that is attracted to a magnet such as stainless steel 400 series, Hastelloy, or SUMICLEAN M as the material of the vacuum bellows, the generated metal powder can be adsorbed and removed by the magnet.
In this embodiment, the impurity removal method will be described with reference to FIG.

  In this embodiment, as shown in FIG. 3, impurities mainly composed of metal powder generated from the evaporation head 3 and the vacuum bellows 701 and 702 are scattered between the substrate 1 and the evaporation head 3 to the substrate 1 side. In order to prevent this, a partition 23 and metal powder adsorption magnets 21 and 22 are arranged.

  Since metal powder is generated in a vacuum, the metal powder generated from the evaporation head 3 and the vacuum bellows 701 and 702 does not need to be taken into consideration by the air current that occurs in the atmosphere, and directly jumps to the substrate 1 side when generated. It is characterized in that the partition 23 and the metal powder adsorption magnets 21 and 22 are arranged so as to prevent the powder coming from. By using this example, the impurity concentration of the organic thin film 2 could be lowered, and by using the organic thin film 2, the lifetime of the organic EL device could be improved.

  FIG. 4 is a schematic vertical cross-sectional view of a vapor-phase organic matter vapor deposition apparatus configuration according to the present invention. In the present embodiment, a valve 18 and a pressure gauge 19 are arranged in a pipe between the evaporation source 8 and the evaporation head 3 in the configuration described in Embodiment 1 of FIG. A film thickness meter 25 capable of measuring the amount of the material 50, and a valve, a pressure gauge, a film thickness meter, and an apparatus 20 for controlling the evaporation source temperature in an integrated manner are arranged.

  In Example 4, the signals of the film thickness meter 25 and the pressure gauge 19 are fed back to the control device 20, the flow rate of the vaporized material is adjusted by the valve 18, and the evaporation source temperature is controlled, so that the film formation rate is uniform at a high film formation rate. A thin film can be formed.

  Further, when the substrate 1 is replaced, it is not necessary to inject organic material. Therefore, the control device 20 adjusts the opening / closing degree of the valve 18 and shuts off the valve 18 so that the value of the pressure gauge 19 is kept constant. By controlling the temperature, the film thickness uniformity of the thin film formed on the substrate 1 could be improved. Further, by controlling the temperature of the evaporation source with the pressure gauge 19, it is possible to stably evaporate without applying an excessive heat load on the organic material inside the evaporation source, so that the deterioration of the organic material 9 can be suppressed. Furthermore, material consumption efficiency can be improved because material consumption can be reduced during substrate transport and substrate replacement.

  In FIG. 5, in order to further improve the material utilization efficiency, the substrate A 30 and the substrate B 31 are installed in the vapor deposition chamber, and during the period during which the substrate A is vapor-deposited, the substrate B is transported and exchanged. When the position adjustment with respect to the mask is carried out and the substrate is transferred / replaced on the substrate A side and the position adjustment with respect to the mask is performed on the contrary, the evaporation head 3 moves in the lateral direction where the nozzles are aligned and moves toward the substrate B side. In the method of carrying out the vapor deposition process, it was possible to easily control the evaporation source by reducing the time during which the vapor deposition was stopped as much as possible by transferring and exchanging the substrate and adjusting the position of the mask.

  By using this embodiment, the time during which no vapor deposition is performed on the substrate is only when the substrate is moving laterally. For example, the tact time of vapor deposition per substrate is 88 seconds, and the time for laterally moving the substrate in this case can be about 15 seconds to 16 seconds. Therefore, most of the tact time can be allocated to the actual vapor deposition process, and the production efficiency can be greatly increased. Although it has been described that there are two substrate holding mechanisms, if there are three or more substrate holding mechanisms, the throughput can be further improved.

  FIG. 6 is a schematic vertical cross-sectional view of a vapor-phase organic matter vapor deposition apparatus configuration according to the present invention. This embodiment is an example in which two evaporation sources 801 and 802 are added to the configuration described in Embodiment 4 in FIG. 4 to double the concentration of the vaporized organic material. The control method is the same as that described in Example 4. By using two evaporation sources, the deposition rate can be doubled and a thin film can be formed in a short time, so that the tact time can be shortened. Although this embodiment has been described with two evaporation sources, a high vapor deposition rate can be realized even when three or more evaporation sources are used.

  In the above embodiment, the evaporation source is pluralized. However, as shown in FIG. 7, the evaporation head, the piping, and the evaporation source system are two, and the evaporation is performed at the same time. realizable.

  As described above, in this embodiment, when the same material is used, the deposition rate can be improved. In this embodiment, there is also a great advantage when a composite material is deposited. Each layer of the organic EL is often formed by adding a small amount of dopant to the host material. In such a case, it is possible to accurately form a thin film material having a desired mixing ratio at each evaporation rate by putting another material in the vapor deposition source shown in FIG. 6 or FIG. In the present embodiment of FIG. 7, the system of two evaporation heads, piping, and evaporation source has been described. However, a plurality of materials can be mixed using a plurality of three or more systems.

  FIG. 8 is a schematic vertical cross-sectional view of a vapor-phase organic matter vapor deposition apparatus configuration according to the present invention. In the present embodiment, as shown in FIG. 8, the valves 1801 to 1805 and the vacuum pump 40 are arranged between the respective evaporation sources and at the outlet of the evaporation source as shown in FIG.

  In this embodiment, when the organic material 9 in the evaporation sources 801 and 802 is exhausted, the material can be exchanged without returning the vapor deposition chamber to the atmospheric state. In FIG. 8, the evaporation sources 801 and 802 are connected in series, but the same effect can be obtained even if they are arranged in parallel.

  FIG. 9 and FIG. 10 are schematic vertical sectional views of the vapor-phase organic matter vapor deposition apparatus configuration according to the present invention. In the present embodiment, the structure described in the first embodiment shown in FIG. 1 is configured such that the evaporation head 3 ejects an organic material from a nozzle in a lateral direction. However, in the method of transporting the substrate, the deposition may be performed with the substrate horizontal. This is because if the deposition is performed with the deposition surface of the substrate facing upward or downward, the tact time may be shortened. FIG. 9 shows the case where the deposition surface of the substrate to be processed is directed upward, and FIG. 10 shows the case where the deposition surface of the substrate to be processed is directed downward.

  Since the vaporized organic material is ejected from the nozzle of the evaporation head 3, the direction of the evaporation head 3 can be in any direction, but the organic material 9 inside the evaporation source 8 has a structure that does not leak when it is turned sideways. It is necessary to be careful. In FIG. 9 or FIG. 9, the evaporation head 3 is movable to the left and right.

  FIG. 11 is a process diagram showing an example of an organic EL display production process. In Examples 1 to 7, only the organic vapor deposition process of this production process has been described. In FIG. 11, a TFT substrate on which an organic layer and a thin film transistor (TFT) for controlling a current flowing in the organic layer are formed and a sealing substrate for protecting the organic layer from external moisture are separately formed and combined in a sealing process. It is.

  In the TFT substrate manufacturing process of FIG. 11, dry cleaning is performed on the wet-cleaned substrate. Dry cleaning may include cleaning by ultraviolet irradiation. First, a TFT is formed on the dry-cleaned TFT substrate. A passivation film and a planarizing film are formed on the TFT, and a lower electrode of the organic EL layer is formed thereon. The lower electrode is connected to the drain electrode of the TFT. When the lower electrode is an anode, for example, an ITO (Indium Tin Oxide) film is used.

  An organic EL layer is formed on the lower electrode. The organic EL layer is composed of a plurality of layers. When the lower electrode is an anode, from the bottom, for example, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer. Such an organic EL layer is formed by vapor deposition, and is formed by a vapor deposition apparatus or a vapor deposition method as described in the first to seventh embodiments.

  On the organic EL layer, an upper electrode is formed of a solid film in common for each pixel. When the organic EL display device is top emission, a transparent electrode such as IZO is used as the upper electrode, and when the organic EL display device is bottom emission, a metal film such as Al is used.

  In the sealing substrate process of FIG. 11, a desiccant (drying agent) is disposed on the sealing substrate that has been subjected to wet cleaning and dry cleaning. Since the organic EL layer deteriorates when moisture is present, a desiccant is used to remove the moisture inside. Although various materials can be used for the desiccant, the method of arranging the desiccant differs depending on whether the organic EL display device is a top emission or a bottom emission. In some cases, the desiccant is not used.

  In this way, the TFT substrate and the sealing substrate manufactured separately are combined in the sealing step. A sealing material for sealing the TFT substrate and the sealing substrate is formed on the sealing substrate. After combining the sealing substrate and the TFT substrate, the sealing portion is irradiated with ultraviolet rays to cure the sealing portion and complete the sealing. In addition to the glass substrate sealing step, the sealing step includes metal can sealing, solid sealing using a filler, film sealing using a flexible sealing film, and the like.

  A lighting test is performed on the organic EL display device thus formed. In the lighting inspection, even if defects such as black spots and white spots have occurred, those that can be corrected can be corrected to complete the organic EL display device.

  According to the present invention, an organic EL layer formed of a plurality of layers can be formed in a short tact time while suppressing contamination by foreign substances, so that the manufacturing cost of the organic EL display device is reduced and the yield is improved. I can do it. Furthermore, since the components of each layer of the organic EL layer can be accurately controlled, an organic EL display device with high characteristic reproducibility and high reliability can be manufactured.

  DESCRIPTION OF SYMBOLS 1 ... Board | substrate, 2 ... Organic thin film, 3 ... Evaporation head, 4 ... Fine metal mask, 5 ... Deposition chamber, 6 ... Outside deposition chamber, 7 ... Vacuum bellows, 701 ... Velocity bellows, 702 ... Vacuum bellows, 8 ... Evaporation source, 801 ... Evaporation source, 802 ... Evaporation source, 9 ... Organic material, 10 ... Water cooling jacket 11 ... Heating mechanism, 12 ... Vacuum bellows (flexible tube), 13 ... Heat shielding plate, 1301 ... Heat shielding plate, 1302 ... Heat shielding plate, 1303 ... Heat shielding Plate 14 .. barrier plate 15 .. substrate support portion vaporization organic material barrier plate 16 .. atmosphere side vertical movement mechanism 1601 .. vertical movement mechanism 17 .. heating heater 18.・Valve, 1801 ... Valve, 1802 ... Valve, 1803 ... Valve, 1804 ... Valve, 1805 ... Valve, 19 ... Pressure gauge, 1901 ... Pressure gauge, 1902 ... Pressure gauge, 20 ... control device, 21 ... magnet, 22 ... magnet, 23 ... partition, 40 ... pump, 50 ... vaporized organic material.

Claims (13)

A vacuum vapor deposition section is provided for forming a thin film by vapor deposition on the surface of the substrate to be processed, the surface of which is covered with a mask in a vapor deposition chamber that is evacuated and maintained in a vacuum state. A vacuum deposition apparatus having a substrate transfer section to be processed that is transferred between other vacuum chambers,
The vacuum deposition unit includes an evaporation head that discharges the material evaporated through a plurality of nozzles arranged in a line into the processing chamber, an evaporation source that is installed outside the deposition chamber and vaporizes the evaporation material, and the target A substrate holding unit for holding the processing substrate in a state covered with the mask,
The evaporation head and the evaporation source are connected by a pipe having a vapor deposition chamber pipe and a vapor deposition chamber pipe, and the vapor deposition chamber pipe is a soft pipe,
A vacuum deposition apparatus, comprising: an evaporation head moving mechanism that scans the evaporation head in a direction perpendicular to an arrangement direction of a plurality of nozzles arranged in the cleaning. In the vacuum evaporation system of Claim 1,
The evaporation head moving mechanism is vacuum-blocked using a vacuum bellows,
A vacuum evaporation apparatus characterized in that the heating and cooling mechanism and the moving mechanism of the pipe can be driven on the atmosphere side. The vacuum evaporation apparatus according to claim 1 or 2,
A partition and a magnet for adsorbing metal powder are disposed between the substrate to be processed and the evaporation head to prevent impurities generated from the evaporation head and the vacuum bellow from being scattered to the substrate to be processed. A vacuum deposition apparatus characterized by the above. In the vacuum evaporation system according to any one of claims 1 to 3,
A pipe connecting the evaporation source and the evaporation head has a valve and a pressure gauge, and a film thickness meter capable of measuring the amount of organic material ejected from the nozzle of the evaporation head, the pressure gauge and the film thickness gauge A vacuum deposition apparatus having means for controlling the opening and closing of the valve and the temperature of the evaporation source using the above data. In the vacuum evaporation system according to any one of claims 1 to 4,
It comprises two or more substrate holding portions for forming a thin film by vapor deposition on the surface of the substrate to be processed whose surface is covered with a mask in the vapor deposition chamber, and has means for driving the evaporation head vertically and horizontally. Vacuum deposition equipment. In the vacuum evaporation system according to any one of claims 1 to 3,
There are two or more evaporation sources, and the two or more evaporation sources are connected to the evaporation head by the pipe. In the vacuum evaporation system according to any one of claims 1 to 6,
A vacuum deposition apparatus, wherein a vacuum exhaust pump is connected to the pipe. In the vacuum evaporation system according to any one of claims 1 to 7,
There are a plurality of sets of piping that connect the evaporation head, the evaporation source, and the evaporation head and the evaporation source, and the evaporation head, the evaporation source, and the evaporation head and the evaporation source that connect the evaporation source. A vacuum deposition apparatus characterized in that each set of piping can be driven individually. In the vacuum evaporation system according to any one of claims 1 to 8,
The vacuum deposition apparatus, wherein the substrate to be processed is held vertically by the substrate holder. In the vacuum evaporation system according to any one of claims 1 to 8,
The vacuum deposition apparatus, wherein the substrate to be processed is held horizontally by the substrate holder. A vacuum deposition method for depositing a deposition material on a substrate to be processed in a deposition chamber in a vacuum,
Arranging the vapor deposition material in an evaporation source chamber installed outside the vapor deposition chamber;
Evaporating the vapor deposition material by heating the evaporation source chamber;
In the evaporation chamber, an evaporation head having a plurality of nozzles arranged in a line is arranged,
Connect the evaporation head and the evaporation source chamber with a soft pipe,
A vacuum deposition method, wherein the deposition material is deposited on the substrate to be processed by moving the evaporation head in a direction perpendicular to an arrangement direction of the plurality of nozzles. In the vacuum evaporation method of Claim 11,
The vacuum deposition method, wherein the soft pipe includes a bellows structure formed of stainless steel 400, hastelloy, or Sumiclean M. A method of manufacturing an organic EL display device in which a TFT substrate on which a thin film transistor and an organic EL layer are formed is sealed with a sealing substrate,
A TFT substrate on which a thin film transistor is formed is disposed in a vapor deposition chamber, a vapor deposition material for forming the organic EL layer is disposed in an evaporation source chamber disposed outside the vapor deposition chamber,
Evaporating the vapor deposition material by heating the evaporation source chamber;
In the evaporation chamber, an evaporation head having a plurality of nozzles arranged in a line is arranged,
Connect the evaporation head and the evaporation source chamber with a soft pipe,
The organic EL layer is formed by depositing the deposition material on the substrate to be processed by moving the evaporation head in a direction perpendicular to the arrangement direction of the plurality of nozzles. .

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