201127973 六、發明說明： 【發明所屬之技術領域】 本發明關於形成真空蒸鍍膜之方法及其裝置’特別關 於在大型基板上形成有機EL顯示裝置的有效之真空蒸鍍 方法及其裝置。 【先前技術】 0 有機EL顯示裝置或照明裝置使用之有機EL元件， 其構造係將有機材料構成之有機層由上下以陽極以及陰極 之一對電極予以挾持，藉由對電極施加電壓，使電洞由陽 極側，電子由陰極側分別注入有機層，彼等再度結合而發 光之機制。 該有機層係由包含電洞注入層、電洞輸送層、發光層 、電子輸送層、電子注入層之多層膜積層而成的構造。該 有機層之形成材料可使用高分子材料及低分子材料。其中 〇 ’使用低分子材料時係使用真空蒸鍍裝置來形成有機薄膜 〇 有機EL元件之特性大受有機層膜厚之影響。另外， ' 形成有機薄膜之基板年年大型化。因此，使用真空蒸鍍裝 置時需要高精確度控制大型基板上形成之有機薄膜之膜厚 〇 藉由真空蒸鍍在大型基板形成薄膜的構成，例如專利 文獻1(特開2〇〇3-293 1 40號公報）揭示之真空蒸鍍裝置’ 爲蒸鍍氣相有機物，而具備利用真空波紋管 (Vacuum 201127973BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for forming a vacuum evaporation film, and in particular to an effective vacuum evaporation method and apparatus for forming an organic EL display device on a large substrate. [Prior Art] 0 An organic EL element used in an organic EL display device or a illuminating device is constructed by sandwiching an organic layer made of an organic material from an upper electrode and an anode and a counter electrode, and applying a voltage to the electrode to make electricity The hole is injected from the anode side, and the electrons are injected into the organic layer from the cathode side, respectively, and they are combined again to emit light. The organic layer has a structure in which a multilayer film including a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer is laminated. As the material for forming the organic layer, a polymer material and a low molecular material can be used. Among them, 〇 ' uses a vacuum evaporation apparatus to form an organic thin film when using a low molecular material. 特性 The characteristics of the organic EL element are greatly affected by the thickness of the organic layer. In addition, 'the substrate on which the organic film is formed has been enlarged year by year. Therefore, when a vacuum vapor deposition apparatus is used, it is necessary to control the film thickness of the organic thin film formed on the large substrate with high precision, and to form a thin film by vacuum evaporation on a large substrate, for example, Patent Document 1 (Special Open 2〇〇3-293) 1) The vacuum vapor deposition apparatus disclosed in the '40' is a vapor-phase organic material, and is equipped with a vacuum bellows (Vacuum 201127973)
Bellows)之伸縮可以移動的蒸發源。專利文獻2(特開 2005-3 6296號公報）揭示之真空蒸鍍裝置，係使用將大型 基板保持於水平’具備設於蒸鍍裝置外之鉗堝的蒸發源， 於基板上形成薄膜。另外’專利文獻3(特開2003-347047號 公報）揭示之真空蒸鏟裝置，係使用將大型基板保持於垂 直，具備複數鉗堝的蒸發源，於基板上形成薄膜。 (專利文獻） 專利文獻1 :特開2003-293140號公報 專利文獻2 :特開2005-36296號公報 專利文獻3 :特開2003-347047號公報 【發明內容】 (發明所欲解決之課題） 專利文獻1係將氣化有機材料之部分（蒸發源），與將 有機材料噴鍍於基板的蒸發頭（線性源（linear source))予以 分離’利用真空波紋管（蛇腹）之伸縮可以移動蒸發頭，而 對應於大型基板。蒸發頭係設有線狀並列之複數噴嘴的構 造，在和噴嘴並列方向呈直角之方向移動，在大型玻璃基 板上形成有機薄膜之構成。 但是，僅利用真空波紋管之伸縮方向之一方向之移動 ’由玻璃基板之一方向端至端爲止之移動距離變大，需要 和氣化有機材料之蒸發源同時移動，裝置變爲大型化。另 外，伴隨真空內之移動而產生之污染未加以考量。 專利文獻2係將氣化有機材料之蒸發源，與將有機材 -6- 201127973 料噴鍍於基板的蒸發頭予以分離，於其間設置閥’在無須 噴鍍時關閉閥而提升有機材料之利用效率。但是’針對大 型基板之對應手段未曾揭示。 專利文獻3係將複數個蒸發源固定設置於膜形成腔室 ，藉由滑動移動基板，而於基板全面進行成膜。但是’並 ' 未針對材料切換或連續運轉、基板移動機構之污染防止手 段有所揭示。 Q 本發明目的在於解決上述習知技術之問題，提供一種 真空蒸鍍方法及其裝置，其使用設有線狀並列之複數噴嘴 的蒸發源，對大型基板進行有機薄膜之高速成膜，在考量 污染防止條件下可以進行連續之成膜。 (用以解決課題的手段） 本發明係將氣化有機材料之蒸發源，與將有機材料披 覆於基板的蒸發頭予以分離，將蒸發源及蒸發頭之配管構 成爲柔軟之構成、亦即利用真空波紋管之伸縮及彎曲之效 果’來實現可於蒸鍍室內移動之蒸發頭，而設置有污染防 止機構爲其最主要特徵。 (發明之效果） 依據本發明’可以高速、且良好之良品率進行有機材 料對大型基板之蒸鍍。本發明中，真空內之驅動係藉由真 空波紋管，大氣側係藉由驅動機構來實現，因此真空內之 污染物質之產生’主要爲真空波紋管之伸縮及彎曲時產生 -7- 201127973 之金屬污染物，因此，污染物質相較 0 另外’依據本發明，於真空蒸鍍 。習知方法需要同時移動蒸發源以及 之構造體成爲5 00kg〜1 000kg，移動 據本發明’僅移動蒸發頭即可，因此 ’可以大幅降低蒸鍍裝置之製造成本 另外’依據本發明之一態樣，鐵 物可藉由磁鐵予以除去，可防止有機 藉由使用本發明裝置，具有能提供污 元件之優點。 依據本發明另一態樣，藉由將蒸 數化’可實現高速成膜。使用複數個 間設置閥’藉由切換可以進行連續成 【實施方式】 以下說明適用於有機EL裝置之 真空蒸鍍裝置之一例。有機EL裝置 極上使電洞注入層或電洞輸送層、發 陰極上使電子注入層或電子輸送層等 藉由真空蒸鏟以多層積層的方式予以 本發明之有機EL裝置製造裝置 真空蒸鑛部介由以線狀配置之複數噴 蒸發頭（線性源）；用於氣化有機材料 於習知蒸鍍方法變少 室僅移動蒸發頭即可 蒸發頭，因此，移動 機構變爲大規模。依 ，移動機構變爲簡易 、保養費用。 合金系列之金屬污染 薄膜之污染。因此， 染物質少、壽命長之 發源及蒸發頭予以複 蒸發源，於該蒸發源 膜。 製造的作爲本發明之 之製造裝置，係於陽 光層（有機膜層），於 各種材料之薄膜層， 形成之裝置。 之特徵爲，具有：於 嘴將材料予以蒸發的 的蒸發源；以及將氣 -8- 201127973 化後之材料輸送至蒸發頭的柔軟配管。以下依據實施形態 及圖面詳細說明本發明之內容。 (第1實施形態） 圖1表示本發明之氣相有機物之蒸鍍裝置之縱斷面圖 。該實施形態之氣相有機物之蒸鍍裝置，係由以下構成： 蒸鎪室5 ’用於使有機物蒸鍍於母材；蒸發源8，用於加 〇 熱有機物將其轉換爲氣相之狀態；蒸發頭3，係以線狀配 置有複數個用於噴射氣相有機物之噴射部（噴嘴）；蒸發源 8與蒸發頭3之間的柔軟配管7;上下移動機構16，用於 驅動蒸發頭3之動作；及基板保持部15，用於保持基板1 以及基板。又，於蒸鍍室內係成爲柔軟配管7，但於蒸鍍 室外可使用通常之配管。但此情況下，需要可以進行配管 之加熱。 於蒸發源8 ’容器81內之有機材料8係藉由加熱用加 〇 熱器17進行加熱而被氣化。容器81係由SUS、Ti、Mo 等形成。蒸發源內部係藉由加熱用加熱器1 7被加熱至2 0 0 °C〜400T：，有機材料9被氣化。 ' 第1實施形態之蒸發頭係由以下構成：加熱噴嘴部分 之加熱器；使加熱器之熱不致於輻射至基板側的水冷套管 10;熱遮蔽板1301、1302、1303;及防壁板14，用於防 止噴嘴之噴出物附著於熱遮蔽板等周邊元件。蒸鏟室5係 具備和外部隔離之內部空間，於上述內部空間之底面具備 可將氣相有機物之蒸鍍用基板1予以固定的基板保持部15 -9- 201127973 另外，於蒸鍍室5內，其構成係如圖1之左上噴出圖 中所示，蒸發頭3係設有以線狀配置之複數噴嘴之構造， 可於和噴嘴並列方向呈直角之方向移動，而將氣化之有機 材料5 0噴射至基板1上據以形成有機薄膜2。驅動蒸發頭 3之動作用的上下移動機構1 6，係藉由真空波紋管702被 真空切斷，因此上下移動機構16可於大氣中動作。 蒸發源8與蒸發頭3之間之柔軟配管7係由以下構成 :真空波紋管701 ;柔軟配管（可撓性軟管等）12，用於輸 送氣化後之材料；加熱器1 1，設於該配管1 2外部，以使 在配管內輸送中之氣化有機材料不被吸附於配管內壁的方 式，將配管內壁予以加熱；及水冷套管10，用於遮斷由該 加熱器放出之熱防止其到達周邊部。 柔軟配管12、加熱器11及水冷套管10，係藉由真空 波紋管70 1被和蒸鍍室5內之真空環境施予隔離，因此可 利用通常之大氣中使用之構件。蒸發源8，係於周邊設有 加熱用加熱器17用於進行有機材料9之氣化。 蒸發頭3、柔軟配管12、蒸發源8之加熱溫度，可配 合所要之有機材料之蒸汽壓來決定。設定溫度以使蒸發頭 3之加熱溫度2柔軟配管1 2之加熱溫度g蒸發源8之加熱 溫度，如此則，可防止噴嘴噴射前之於配管內氣化後之材 料之固化。 真空波紋管701及7〇2，基於存在機械壽命而成爲可 以定期更換而被分離之構造。另外，真空波紋管701及 -10- 201127973 7 02亦可使用不鏽鋼400系等之金屬。 於蒸鍍室5，於基板1之必要之部分具備進行發光材 料之蒸鍍用的金屬精密遮罩（metal fine mask)4。實施真空 蒸鍍時，係藉由真空排氣泵（未圖示）使蒸鍍室5之真空裝 置內部維持於約1〇_3〜lO^Pa之高真空狀態。在連結於圖 ' 1之蒸鍍室的腔室（未圖示）設有被處理基板收/送部，可 於腔室進行基板之收/送，因此圖1之蒸鍍室可以常時維 f) 持於真空狀態。 (第2實施形態） 於第1實施形態，於蒸鍍室5內，蒸發源8與蒸發頭 3之間之柔軟配管7之真空保持係使用真空波紋管70 1， 驅動蒸發頭3的上下移動機構1 6係使用真空波紋管702 實施真空切斷。 本實施形態中，如圖2所示，不使用真空波紋管701 〇 及真空波紋管702，而是使用可於真空內對應之上下移動 機構1 601及柔軟配管1201、加熱器1 101、水冷套管1001 ' ，而可使蒸發頭3於真空裝置內部移動。因爲不使用真空 波紋管，可以簡化蒸鏟室5內部之構造。但是使用較多之 真空內可以對應之構件，因此需要考量彼等構件之機械壽 命 '成本° (第3實施形態） 於第1實施形態並未針對雜質產生時之除去方法加以 -11 - 201127973 考量。本實施形態中，基於真空內產生之雜質主要由加熱 機構及移動機構部分引起，因此使用真空波紋管，而將加 熱機構及移動機構部分設於蒸鑛室5之外之大氣側。因此 ，真空內產生之主要雜質爲由真空波紋管放出之金屬粉。 該真空波紋管之材質，藉由使用不鏽鋼400系、耐鹽 酸鎳基合金（hastellow)、SUMICLEAN Μ等能被磁鐵吸附 之構件，如此則，可以藉由磁鐵將產生之金屬粉予以吸附 、除去。 依據圖3說明本實施形態中之上述雜質除去方法。 如圖3所示，本實施形態中，係於基板1與蒸發頭3 之間設置隔間壁2 3及金屬粉吸附磁鐵2 1、2 2，據以防止 由蒸發頭3及真空波紋管701、702產生之以金屬粉爲主 之雜質飛散至基板1側。 真空中會產生金屬粉，因此，無須針對蒸發頭3及真 空波紋管701、702產生之金屬粉被大氣中引起之氣流往 上推升等問題，而是在產生時，以可以防止直接飛向基板 1側的方式，將隔間壁23及金屬粉吸附磁鐵2 1、22予以 配置’此爲其特徵。藉由使用本實施形態，可降低有機薄 膜2之雜質濃度，藉由使用上述有機薄膜2可提升有機 EL裝置之壽命。 (第4實施形態） 圖4表示本發明之氣相有機物之蒸鍍裝置構成之縱斷 面圖。本實施形態之特徵爲，在圖1之第1實施形態說明 -12- 201127973 之構成’在蒸發源8與蒸發頭3之間之配管配置閥18及 壓力計1 9 ’配置膜厚計25 ’用於測定由蒸發頭3之噴嘴 噴出之氣化有機材料50之量；及控制裝置20，針對彼等 閥、壓力計、膜厚計、蒸發源溫度進行統合控制。 於第4實施形態’係將膜厚計2 5及壓力計1 9之信號 回授至控制裝置20，進行閥〗8對氣化材料之流量調整、 蒸發源溫度之控制，可以高成膜速度形成均勻之薄膜。 〇 基板1之更換時無須有機材料之噴射，因此以使壓力 計1 9之値保持一定的方式，藉由控制裝置2 〇進行閥i 8 之開/關程度之調整及切斷動作蒸發源溫度之控制，據以 提升形成於基板1之薄膜之膜厚均勻性。另外，藉由壓力 計19進行蒸發源之溫度控制，可以在對蒸發源內部之有 機材料不施加過度之熱負荷之情況下，進行穩定之蒸發， 可抑制有機材料9之劣化。另外，基板搬送或基板更換時 可減少材料之消耗，可提升材料利用效率。Bellows) can be moved by an evaporation source. The vacuum vapor deposition apparatus disclosed in Patent Document 2 (Japanese Laid-Open Patent Publication No. Hei No. 2005-3 6296) uses an evaporation source that holds a large substrate at a horizontal level and has a clamp provided outside the vapor deposition device to form a thin film on the substrate. In the vacuum shovel apparatus disclosed in Japanese Laid-Open Patent Publication No. 2003-347047, a large-sized substrate is held vertically, and an evaporation source having a plurality of nipples is used to form a film on the substrate. (Patent Document 1) Japanese Laid-Open Patent Publication No. Hei. No. 2003-347. Document 1 separates the vaporized organic material (evaporation source) from the evaporation head (linear source) that sprays the organic material on the substrate. 'Using the vacuum bellows (snake belly) to move the evaporation head And corresponds to a large substrate. The evaporation head is constructed by a plurality of nozzles arranged in a line shape, and moves in a direction perpendicular to the direction in which the nozzles are arranged, and an organic film is formed on the large glass substrate. However, only the movement in one direction of the direction of expansion and contraction of the vacuum bellows is increased by the distance from one end to the end of the glass substrate, and it is necessary to move simultaneously with the evaporation source of the vaporized organic material, and the apparatus is enlarged. In addition, contamination associated with movement within the vacuum has not been considered. Patent Document 2 separates an evaporation source of a vaporized organic material from an evaporation head in which an organic material -6-201127973 is sprayed on a substrate, and a valve is provided therebetween to close the valve without spraying to enhance the utilization of the organic material. effectiveness. However, the corresponding means for large substrates has not been disclosed. Patent Document 3 fixes a plurality of evaporation sources in a film forming chamber, and slides the substrate to form a film on the substrate. However, 'and' is not disclosed for material switching or continuous operation, and the prevention of contamination of the substrate moving mechanism. Q The object of the present invention is to solve the above problems of the prior art, and to provide a vacuum evaporation method and an apparatus thereof, which use an evaporation source provided with a plurality of linear nozzles in parallel to perform high-speed film formation of an organic thin film on a large substrate, in consideration of contamination Continuous film formation can be performed under the conditions of prevention. (Means for Solving the Problem) In the present invention, the evaporation source of the vaporized organic material is separated from the evaporation head in which the organic material is coated on the substrate, and the evaporation source and the piping of the evaporation head are configured to be soft, that is, The evaporation head that can move in the vapor deposition chamber is realized by the effect of the expansion and contraction of the vacuum bellows, and the pollution prevention mechanism is provided as its main feature. (Effects of the Invention) According to the present invention, the vapor deposition of an organic material on a large substrate can be carried out at a high speed and at a good yield. In the present invention, the driving in the vacuum is realized by the vacuum bellows, and the atmospheric side is realized by the driving mechanism, so that the generation of the pollutants in the vacuum is mainly caused by the expansion and contraction of the vacuum bellows -7-201127973 Metal contaminants, therefore, the pollutants are compared to 0 in addition to 'vacuum evaporation according to the invention. The conventional method requires moving the evaporation source and the structure at the same time to be 500 kg to 1 000 kg, and moving according to the present invention 'only moving the evaporation head, so 'can greatly reduce the manufacturing cost of the vapor deposition device. As such, the iron can be removed by a magnet, which prevents the organics from having the advantage of providing a dirty element by using the apparatus of the present invention. According to another aspect of the present invention, high speed film formation can be achieved by vaporizing. The valve can be continuously formed by switching between a plurality of valves. [Embodiment] An example of a vacuum vapor deposition device applied to an organic EL device will be described below. In the organic EL device, the hole injection layer or the hole transport layer is formed on the cathode, and the electron injection layer or the electron transport layer is placed on the cathode, and the organic EL device manufacturing apparatus vacuum deposition section of the present invention is laminated by a vacuum shovel. A plurality of ejecting evaporation heads (linear source) arranged in a line shape; for vaporizing an organic material in a conventional vapor deposition method, the chamber is evaporating only by moving the evaporation head, and therefore, the moving mechanism becomes large-scale. According to the mobile organization, the mobile organization becomes simple and maintenance cost. Metal contamination of the alloy series. Contamination of the film. Therefore, the source of the dyeing material, the long life, and the evaporation head are re-evaporated from the source film. The apparatus for producing the present invention is a device in which a solar layer (organic film layer) is formed on a film layer of various materials. It is characterized in that it has an evaporation source for evaporating the material in the nozzle, and a flexible pipe for conveying the material obtained by the gas to the evaporation head. The contents of the present invention will be described in detail below based on the embodiments and the drawings. (First Embodiment) Fig. 1 is a longitudinal sectional view showing a vapor deposition apparatus for a vapor phase organic material of the present invention. The vapor deposition apparatus of the vapor phase organic material of this embodiment has the following constitutions: a vapor deposition chamber 5' for vapor deposition of an organic substance on a base material, and an evaporation source 8 for heating a hot organic substance to convert it into a gas phase state. The evaporation head 3 is provided with a plurality of injection portions (nozzles) for injecting vapor phase organic substances in a line shape, a flexible pipe 7 between the evaporation source 8 and the evaporation head 3, and a vertical movement mechanism 16 for driving the evaporation head. The operation of 3; and the substrate holding portion 15 for holding the substrate 1 and the substrate. Further, the flexible piping 7 is used in the vapor deposition chamber, but a normal piping can be used for the outdoor deposition. However, in this case, it is necessary to perform heating of the piping. The organic material 8 in the evaporation source 8' container 81 is vaporized by heating by the heating heater 17. The container 81 is formed of SUS, Ti, Mo, or the like. The inside of the evaporation source is heated to 200 ° C to 400 T by the heater 17 for heating: the organic material 9 is vaporized. The evaporation head of the first embodiment is composed of a heater that heats the nozzle portion, a water-cooling jacket 10 that does not radiate heat to the substrate side, heat shielding plates 1301, 1302, 1303, and a wall panel 14 It is used to prevent the nozzles from being attached to peripheral components such as heat shields. The steaming shovel chamber 5 is provided with an internal space that is isolated from the outside, and has a substrate holding portion 15 that can fix the vapor-deposited substrate 1 for gas phase organic matter on the bottom surface of the internal space, and is also provided in the vapor deposition chamber 5. The structure is as shown in the upper left ejection diagram of Fig. 1. The evaporation head 3 is provided with a structure of a plurality of nozzles arranged in a line shape, and is movable in a direction perpendicular to the direction in which the nozzles are aligned, and the organic material to be vaporized 50 is sprayed onto the substrate 1 to form an organic thin film 2. The vertical movement mechanism 16 for driving the operation of the evaporation head 3 is vacuum-cut by the vacuum bellows 702, so that the vertical movement mechanism 16 can be operated in the atmosphere. The flexible pipe 7 between the evaporation source 8 and the evaporation head 3 is composed of a vacuum bellows 701, a flexible pipe (flexible hose, etc.) 12 for conveying the vaporized material, and a heater 1 1 Outside the pipe 12, the inner wall of the pipe is heated so that the vaporized organic material in the pipe is not adsorbed to the inner wall of the pipe; and the water-cooled casing 10 is used to block the heater The heat released prevents it from reaching the periphery. The flexible pipe 12, the heater 11, and the water-cooling jacket 10 are separated from the vacuum environment in the vapor deposition chamber 5 by the vacuum bellows 70 1 so that the members used in the ordinary atmosphere can be used. The evaporation source 8 is provided with a heating heater 17 for gasification of the organic material 9 at the periphery. The heating temperature of the evaporation head 3, the flexible piping 12, and the evaporation source 8 can be determined by the vapor pressure of the desired organic material. The temperature is set so that the heating temperature 2 of the evaporation head 3 is softened by the heating temperature of the pipe 12 and the heating temperature of the evaporation source 8, so that the solidification of the material after vaporization in the pipe before the nozzle ejection can be prevented. The vacuum bellows 701 and 7〇2 have a structure that can be periodically replaced and separated based on the existence of the mechanical life. Further, the vacuum bellows 701 and -10- 201127973 07 can also be made of a metal such as stainless steel 400. In the vapor deposition chamber 5, a metal fine mask 4 for performing vapor deposition of the light-emitting material is provided in a necessary portion of the substrate 1. When vacuum vapor deposition is performed, the inside of the vacuum chamber of the vapor deposition chamber 5 is maintained at a high vacuum of about 1 〇 3 to 10 MPa by a vacuum exhaust pump (not shown). In the chamber (not shown) connected to the vapor deposition chamber of FIG. 1 , a substrate receiving/receiving portion is provided, and the substrate can be received and transported in the chamber. Therefore, the vapor deposition chamber of FIG. 1 can be always used. ) Hold in a vacuum. (Second Embodiment) In the first embodiment, in the vapor deposition chamber 5, the vacuum holding of the flexible pipe 7 between the evaporation source 8 and the evaporation head 3 uses the vacuum bellows 70 1 to drive the vertical movement of the evaporation head 3. The mechanism 16 performs vacuum cutting using the vacuum bellows 702. In the present embodiment, as shown in FIG. 2, the vacuum bellows 701 〇 and the vacuum bellows 702 are not used, but the upper and lower movable mechanisms 1 601 and the flexible piping 1201, the heater 1 101, and the water-cooled jacket are used in the vacuum. The tube 1001' allows the evaporation head 3 to move inside the vacuum device. Since the vacuum bellows is not used, the configuration inside the steaming shovel 5 can be simplified. However, the components that can be used in a large number of vacuums are required. Therefore, it is necessary to consider the mechanical life of the members. The cost is (the third embodiment). In the first embodiment, the method of removing impurities is not considered. -11 - 201127973 . In the present embodiment, since the impurities generated in the vacuum are mainly caused by the heating mechanism and the moving mechanism portion, the vacuum bellows is used, and the heating mechanism and the moving mechanism portion are provided on the atmosphere side other than the vapor deposition chamber 5. Therefore, the main impurity generated in the vacuum is the metal powder discharged from the vacuum bellows. The material of the vacuum bellows can be adsorbed and removed by a magnet by using a member which can be adsorbed by a magnet such as a stainless steel 400 system, a salt-resistant nickel-based alloy (hastellow) or a SUMICLEAN®. The above-described method for removing impurities in the present embodiment will be described with reference to Fig. 3 . As shown in Fig. 3, in the present embodiment, a partition wall 23 and metal powder adsorption magnets 2 1 and 2 2 are provided between the substrate 1 and the evaporation head 3, thereby preventing the evaporation head 3 and the vacuum bellows 701 from being removed. The impurity mainly composed of metal powder generated by 702 is scattered to the side of the substrate 1. Metal powder is generated in the vacuum, so that it is not necessary to raise the metal powder generated by the evaporation head 3 and the vacuum bellows 701, 702 by the airflow caused by the atmosphere, but it is prevented from directly flying toward the fly. On the side of the substrate 1, the partition wall 23 and the metal powder adsorption magnets 2 1 and 22 are arranged to be characterized. By using this embodiment, the impurity concentration of the organic thin film 2 can be lowered, and the life of the organic EL device can be improved by using the above organic thin film 2. (Fourth Embodiment) Fig. 4 is a longitudinal sectional view showing the structure of a vapor deposition apparatus for a vapor phase organic material according to the present invention. The present embodiment is characterized in that, in the first embodiment of Fig. 1, the configuration of -12-201127973 is described as 'the pipe arrangement valve 18 and the pressure gauge 19' between the evaporation source 8 and the evaporation head 3 are disposed. The apparatus for measuring the amount of the vaporized organic material 50 ejected from the nozzle of the evaporation head 3; and the control device 20 for integrated control of the temperature of the valves, the pressure gauge, the film thickness meter, and the evaporation source. In the fourth embodiment, the signals of the film thickness gauge 25 and the pressure gauge 19 are fed back to the control device 20, and the flow rate adjustment of the vaporized material and the control of the evaporation source temperature are performed by the valve 8, and the film formation speed can be high. A uniform film is formed. When the replacement of the substrate 1 is unnecessary, the ejection of the organic material is not required, so that the degree of opening/closing of the valve i 8 and the evaporation source temperature are controlled by the control device 2 方式 in such a manner that the pressure gauge 19 is kept constant. The control is based on the uniformity of the film thickness of the film formed on the substrate 1. Further, by controlling the temperature of the evaporation source by the pressure gauge 19, stable evaporation can be performed without applying an excessive heat load to the organic material inside the evaporation source, and deterioration of the organic material 9 can be suppressed. In addition, when the substrate is transferred or the substrate is replaced, the material consumption can be reduced, and the material utilization efficiency can be improved.
〇 於圖5，爲更進一步提升材料之利用效率，將基板A 30及基板B 31配置於蒸鑛室內，在進行基板A之蒸鍍期 間，於基板B側實施基板之搬送、更換、遮罩之位置調整 ' ，反之，於基板A側實施基板之搬送、更換、遮罩之位置 調整時，使蒸發頭3朝噴嘴之並列之橫方向移動，而實施 基板B側之蒸鍍工程的方式，如此則，於基板之搬送、更 換、遮罩之位置調整時間，可以盡量減少蒸鍍停止之時間 ，可以簡單進行蒸發源之控制。 藉由使用本實施形態，不對基板進行蒸鍍時間係僅成 -13- 201127973 爲基板橫向移動時。例如1片基板之蒸鍍工作時間爲8 8 秒’可以將該情況下之基板橫向移動時間設爲約1 5秒〜 1 6秒。因此’可將工作時間之大部分分配給實際之蒸鑛工 程’可以大幅提升生產效率。另外，雖說明2個基板保持 機構之例’但3個基板保持機構時更能提升作業效率。 (第5實施形態） 圖6表示本發明之氣相有機物之蒸鍍裝置構成之縱斷 面模式圖。本實施形態中，係於如圖4之第4實施形態之 構成’增設2個蒸發源801、802，使氣化之有機材料之濃 度倍增之一例。控制方法係如第4實施形態之說明，藉由 設置2個蒸發源’可使蒸鑛速度倍增，可於短時間形成薄 膜，因此可實現作業時間之短縮。本實施形態中雖說明2 個蒸發源’但亦可使用3個以上之複數蒸發源來實現高蒸 鍍速率。 另外，於上述實施形態中係將蒸發源複數化之例，但 亦可如圖7所示’將蒸發頭、配管 '蒸發源之系統設爲2 個，同時進行蒸鍍，而實現高蒸鍍速率。 如上述說明，本實施形態中，使用同一材料時可提升 蒸鍍速率。依據本實施形態，在蒸鍍複合材料亦具有優點 。有機EL之各層’大多於主要材料添加微量之摻雜劑而 形成。此情況下’藉由在如圖6或7所示蒸發源加入其他 材料，而可以個別之蒸鑛速率正確形成所要混合比之薄膜 材料。於圖7之實施形態中雖δ兌明2個蒸發頭、配管、蒸 -14- 201127973 發源之系統’但亦可使用3個以上之複數系統可以使複數 之材料混合。 (第6實施形態） 圖8表示本發明氣相有機物之蒸鑛裝置構成縱斷面模 * 式圖。本實施形態中，係於圖6之第5實施形態說明之中 ’如圖8所示，於各蒸發源間、蒸發源出口，將閥1801〜 () 1805、真空泵40予以配置之構成。 本實施形態中，當蒸發源801、802中之有機材料9 不存在時，不必將蒸鍍室回復大氣狀態而可以進行材料交 換之一例。於圖8，蒸發源801與802雖被串聯連接，但 並列配置亦可獲得同樣效果。 (第7實施形態） 圖9、10表示本發明氣相有機物之蒸鍍裝置構成縱斷 〇 面模式圖。本實施形態中，係於如圖1之第1實施形態所 示構成中，設爲使蒸發頭3可由噴嘴橫向噴出有機材料之 構成。但是，基板搬送方法之處理方式，有將基板以水平 ' 方式進行蒸鍍之情況。此乃基於基板之蒸鍍面向上或向下 進行蒸鍍時有利於作業時間之短縮。被處理基板之蒸鍍面 向上時爲圖9，被處理基板之蒸鍍面向下時爲圖1〇。 氣化之有機材料係由蒸發頭3之噴嘴噴出，蒸發頭3 之方向爲哪一方向均無問題，但是，蒸發源8內部之有機 材料9設爲橫向時須設爲不會導致材料洩漏之構成，此乃 -15- 201127973 需要注意者。另外，圖9或於圖9，蒸發頭3可於左 動。 (第8實施形態） 圖11表示有機EL顯示裝置生產工程之一例之工 。於第1〜第7實施形態中僅說明該生產工程之有機 之工程。於圖1 1，係使形成有有機層以及控制對有機 入之電流的薄膜電晶體（TFT)的TFT基板，與保護有 使不受外部濕氣影響的封裝基板個別予以形成之後， 裝工程予以組合者。 於圖1 1之TFT基板之形成工程，係對濕洗淨後 板進行乾洗淨。乾洗淨亦有包含紫外線洗淨之情況。 洗淨後之TFT基板，首先形成TFT。於TFT上形成 膜或平坦膜，於其上形成有機EL層之下部電極。下 極係連接於TFT之汲極電極。下部電極設爲陽極時， 用例如 ITO(Indium Tin Oxide)膜。 於下部電極之上形成有機EL層。有機EL層係 數層構成。下部電極爲陽極時，由下起依序爲例如電 入層、電洞輸送層、發光層、電子輸送層、電子注入 此種有機EL層係藉由蒸鑛形成，係藉由第1〜第7 形態之蒸鏟裝置或蒸鍍方法予以形成。 於有機EL層之上，係對應於各畫素共通而於平 上形成上部電極。有機EL顯示裝置爲頂部發光型 Emission)時，上部電極可使用IZO等之透明電極， 右移 程圖 蒸鍍 層流 機層 於封 之基 對乾 鈍化 部電 可使 由複 洞注 層。 實施 塗膜 (Top 有機 -16- 201127973 EL顯不裝置爲底部發光型（Bottom Emission)時， A1等之金屬膜。 於圖11之基板封裝工程，係對濕洗淨或乾洗 封裝基板配置乾燥劑。水分之存在會劣化有機EL 除去內部之水分而使用乾燥劑。乾燥劑可使用各種 * 但依據有機EL顯示裝置爲頂部發光型或底部發光 乾燥劑之配置方法有所不同，頂部發光型亦有不使 〇 況。 如上述說明，個別製造之T F T基板與封裝基板 裝工程中被組合。將TFT基板與封裝基板予以封裝 材料，係被形成於封裝基板中。將封裝基板與TFT 以組合之後，於密封部照射紫外線，使密封部硬化 封裝。另外，除上述玻璃基板封裝工程以外，封裝 可爲金屬罐封裝或使用塡充材之固態封裝、使用可 裝膜之膜封裝等。 〇 對上述形成之有機EL顯示裝置進行點亮檢測 亮檢測中針對黑點、白點等缺陷亦可進行缺陷修正 修正，而完成有機EL顯示裝置。In FIG. 5, in order to further improve the utilization efficiency of the material, the substrate A 30 and the substrate B 31 are disposed in the vapor deposition chamber, and during the vapor deposition of the substrate A, the substrate is transferred, replaced, and masked on the substrate B side. On the other hand, when the substrate is transported and replaced, and the position of the mask is adjusted on the substrate A side, the evaporation head 3 is moved in the lateral direction in which the nozzles are arranged in parallel, and the vapor deposition process on the substrate B side is performed. In this way, the time for the substrate to be conveyed, replaced, and masked can be adjusted to minimize the time for vapor deposition to stop, and the evaporation source can be easily controlled. By using this embodiment, the vapor deposition time of the substrate is not only -13 - 201127973 when the substrate is laterally moved. For example, the vapor deposition operation time of one substrate is 8 8 seconds'. The lateral movement time of the substrate in this case can be set to about 15 seconds to 16 seconds. Therefore, the ability to allocate a large portion of the working hours to the actual steaming project can greatly increase production efficiency. Further, although an example of two substrate holding mechanisms will be described, the work efficiency can be further improved in the case of three substrate holding mechanisms. (Fifth Embodiment) Fig. 6 is a longitudinal sectional view showing the configuration of a vapor deposition apparatus for a vapor phase organic material according to the present invention. In the present embodiment, as shown in the fourth embodiment of Fig. 4, two evaporation sources 801 and 802 are added, and the concentration of the vaporized organic material is multiplied. The control method is as described in the fourth embodiment, and by providing two evaporation sources, the vaporization speed can be multiplied, and the film can be formed in a short time, so that the working time can be shortened. In the present embodiment, two evaporation sources are described, but three or more complex evaporation sources may be used to achieve a high vapor deposition rate. Further, in the above embodiment, the evaporation source is pluralized. However, as shown in Fig. 7, the system of 'evaporating head and piping' evaporation source may be two, and vapor deposition may be performed to achieve high vapor deposition. rate. As described above, in the present embodiment, the vapor deposition rate can be increased when the same material is used. According to this embodiment, there is an advantage in vapor deposition of the composite material. The layers of the organic EL are often formed by adding a trace amount of a dopant to the main material. In this case, by adding other materials to the evaporation source as shown in Fig. 6 or 7, the film material can be properly formed at a desired vaporization rate. In the embodiment of Fig. 7, although the two evaporation heads, the piping, and the system of steaming -14-201127973 originated, the plural materials can be mixed by using three or more complex systems. (Embodiment 6) Fig. 8 is a view showing a longitudinal section of a steaming apparatus for a vapor phase organic matter according to the present invention. In the fifth embodiment of the present invention, as shown in Fig. 8, the valves 1801 to 1805 and the vacuum pump 40 are disposed between the evaporation sources and the evaporation source outlet. In the present embodiment, when the organic material 9 in the evaporation sources 801, 802 does not exist, it is not necessary to return the vapor deposition chamber to the atmospheric state, and an example of material exchange can be performed. In Fig. 8, although the evaporation sources 801 and 802 are connected in series, the same effect can be obtained by the parallel arrangement. (Seventh Embodiment) Figs. 9 and 10 are views showing a longitudinal sectional view of a vapor deposition apparatus for a vapor phase organic material according to the present invention. In the present embodiment, in the configuration shown in the first embodiment of Fig. 1, the evaporation head 3 is configured such that the organic material can be ejected laterally from the nozzle. However, in the processing method of the substrate transfer method, there is a case where the substrate is vapor-deposited in a horizontal manner. This is advantageous in that the working time is shortened when the vapor deposition of the substrate is performed on the upper side or the lower side. The vapor deposition surface of the substrate to be processed is shown in Fig. 9 when the vapor deposition surface is upward, and Fig. 1 is shown when the vapor deposition surface of the substrate to be processed is down. The vaporized organic material is ejected from the nozzle of the evaporation head 3, and the direction of the evaporation head 3 is no problem in any direction. However, when the organic material 9 inside the evaporation source 8 is set to the lateral direction, it must be set so as not to cause material leakage. Composition, this is -15- 201127973 Need to pay attention. Alternatively, in Fig. 9 or Fig. 9, the evaporation head 3 can be moved to the left. (Eighth Embodiment) Fig. 11 shows an example of a production process of an organic EL display device. Only the organic engineering of the production process will be described in the first to seventh embodiments. In FIG. 1, a TFT substrate on which an organic layer and a thin film transistor (TFT) for controlling an organic current are formed, and a package substrate which is protected from external moisture is separately formed, and then the assembly process is performed. Combiner. In the formation process of the TFT substrate of Fig. 11, the wet-cleaned plate is subjected to dry cleaning. Dry cleaning also includes UV cleaning. After cleaning the TFT substrate, a TFT is first formed. A film or a flat film is formed on the TFT, and an electrode below the organic EL layer is formed thereon. The lower pole is connected to the drain electrode of the TFT. When the lower electrode is an anode, for example, an ITO (Indium Tin Oxide) film is used. An organic EL layer is formed over the lower electrode. The organic EL layer is composed of several layers. When the lower electrode is an anode, for example, an electric input layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer are formed by steaming from the bottom, by the first to the first 7 The steaming shovel device or vapor deposition method is formed. On the organic EL layer, an upper electrode is formed on the surface corresponding to the common of the pixels. When the organic EL display device is of the top emission type Emission, the upper electrode can be a transparent electrode of IZO or the like, and the vapor deposition laminator layer of the right shifting pattern can be electrically injected from the base of the package to the dry passivation portion. Coating film (Top Organic-16-201127973 EL display device is Bottom Emission, A1, etc. metal film. In the substrate packaging project of Figure 11, is a wet cleaning or dry cleaning package substrate with desiccant The presence of moisture degrades the organic EL to remove the internal moisture and uses a desiccant. The desiccant can be used in various ways*, but the configuration method of the top emission type or the bottom emission drying agent differs depending on the organic EL display device, and the top emission type also has As described above, the individually manufactured TFT substrate and the package substrate are assembled. The TFT substrate and the package substrate are formed in a package substrate. After the package substrate and the TFT are combined, The sealing portion is irradiated with ultraviolet rays to cure the sealing portion. In addition to the glass substrate packaging process, the package may be a metal can package or a solid package using a ruthenium material, a film package that can be packaged, or the like. The organic EL display device performs the defect correction correction for defects such as black spots and white spots in the lighting detection and bright detection. The organic EL display device is completed.
' 依據本發明可抑制藉由複數層形成之有機EL 異物之污染，而且可於短作業時間予以形成，可降 EL顯示裝置之製造成本，可提升良品率。另外， 確控制有機EL層各層之成份，因此，可以製造出 再現性高，而且信賴性高之有機EL顯示裝置。 可使用 淨後之 層，爲 材料， 型而使 用之情 係於封 之密封 基板予 而完成 工程亦 撓性封 。於點 者實施 層之受 低有機 可以正 特性之 -17- 201127973 【圖式簡單說明】 圖1表示本發明第1實施形態之蒸鍍室與蒸發頭、蒸 發源、基板之構成模式圖及動作說明圖。 圖2表示本發明第2實施形態之蒸鍍室與蒸發頭、蒸 發源、基板之構成模式圖及動作說明之斷面模式圖。 圖3表示本發明第3實施形態之蒸鍍室與蒸發頭、蒸 發源'基板之構成模式圖及動作說明之斷面模式圖。 圖4表示本發明第4實施形態之蒸鍍室與蒸發頭、蒸 發源、基板之構成模式圖及動作說明之斷面模式圖。 圖5表示提升蒸鍍工程之作業效率的構成之斜視圖。 表示本發明第4實施形態之蒸鑛室與蒸發頭、蒸發源、基 板之構成模式圖及動作說明之斜視圖。 圖6表示本發明第5實施形態之蒸鏟室與蒸發頭、蒸 發源、基板之構成模式圖及動作說明之斷面模式圖。 圖7表示本發明第5實施形態之另一態樣之蒸鍍室與 蒸發頭、蒸發源、基板之構成模式圖及動作說明之斷面模 式圖。 圖8表示本發明第6實施形態之蒸鍍室與蒸發頭、蒸 發源、基板之構成模式圖及動作說明之斷面模式圖。 圖9表示本發明第7實施形態之蒸鍍室與蒸發頭、蒸 發源、基板之構成模式圖及動作說明之斷面模式圖。 圖1 〇表示本發明第7實施形態之另一態樣之蒸鍍室 與蒸發頭、蒸發源、基板之構成模式圖及動作說明之斷面 模式圖。 -18- 201127973 圖1 1表示本發明第8實施形態之有機EL顯示裝置生 產工程之一例之工程圖。 【主要元件符號說明】 1 :基板 ' 2 :有機薄膜 3 :蒸發頭 (} 4 :金屬精密遮罩 5 :蒸鍍室 6 :蒸鍍室外 7、 7 0 1、7 0 2 :真空波紋管 8、 801、8 02 :蒸發源 9 :有機材料 1 〇 :水冷套管 1 1 :加熱機構 〇 1 2 :真空波紋管（可撓性軟管） 13、 1301、 1302、 1303:熱遮蔽板 ' 1 4 :防壁板 ' 1 5 :基板保持部氣相有機材料防壁板 1 6 :大氣側上下移動機構 1601 :上下移動機構 1 7 :加熱用加熱器 18、 1801、 1802、 1803、 1804、 1805：閥 19、 1901、 1902:壓力計 -19- 201127973 20 ： 21、 2 3 ： 40 ： 50 ： 控制裝置 22 :磁鐵 隔間壁 泵 氣化之有機材料 -20According to the present invention, contamination of the organic EL foreign matter formed by the plurality of layers can be suppressed, and it can be formed in a short working time, which can lower the manufacturing cost of the EL display device and improve the yield. Further, since the components of the respective layers of the organic EL layer are surely controlled, an organic EL display device having high reproducibility and high reliability can be manufactured. The net layer can be used for the material and type, and the sealing substrate is sealed to complete the engineering and flexible sealing. -17-201127973 Illustrated in the first embodiment of the present invention, FIG. 1 is a schematic view showing the configuration and operation of the vapor deposition chamber, the evaporation head, the evaporation source, and the substrate in the first embodiment of the present invention. Illustrating. Fig. 2 is a cross-sectional schematic view showing a configuration of a vapor deposition chamber, an evaporation head, an evaporation source, and a substrate in the second embodiment of the present invention. Fig. 3 is a cross-sectional schematic view showing a configuration of a vapor deposition chamber, an evaporation head, and an evaporation source 'substrate according to a third embodiment of the present invention. Fig. 4 is a cross-sectional schematic view showing a configuration of a vapor deposition chamber, an evaporation head, an evaporation source, and a substrate in a fourth embodiment of the present invention. Fig. 5 is a perspective view showing a configuration for improving the work efficiency of the vapor deposition process. Fig. is a perspective view showing a configuration diagram and an operation of the vapor deposition chamber, the evaporation head, the evaporation source, and the substrate in the fourth embodiment of the present invention. Fig. 6 is a cross-sectional schematic view showing a configuration of a steaming shovel chamber, an evaporation head, an evaporation source, and a substrate in a fifth embodiment of the present invention. Fig. 7 is a cross-sectional view showing a configuration of a vapor deposition chamber, an evaporation head, an evaporation source, and a substrate, and an operation description of another embodiment of the fifth embodiment of the present invention. Fig. 8 is a cross-sectional schematic view showing a configuration of a vapor deposition chamber, an evaporation head, an evaporation source, and a substrate in a sixth embodiment of the present invention. Fig. 9 is a cross-sectional schematic view showing a configuration of a vapor deposition chamber, an evaporation head, an evaporation source, and a substrate in a seventh embodiment of the present invention. Fig. 1 is a cross-sectional schematic view showing a configuration of a vapor deposition chamber, an evaporation head, an evaporation source, and a substrate, and an operation of another embodiment of the seventh embodiment of the present invention. -18-201127973 Fig. 1 is a view showing an example of an example of the production process of the organic EL display device according to the eighth embodiment of the present invention. [Main component symbol description] 1 : Substrate ' 2 : Organic film 3 : Evaporation head (} 4 : Metal precision mask 5 : Evaporation chamber 6 : Evaporation outdoor 7 , 7 0 1 , 7 0 2 : Vacuum bellows 8 , 801, 8 02 : evaporation source 9 : organic material 1 〇: water-cooled casing 1 1 : heating mechanism 〇 1 2 : vacuum bellows (flexible hose) 13, 1301, 1302, 1303: heat shield plate 1 4: Anti-wall panel ' 1 5 : Substrate holding portion vapor-phase organic material anti-wall panel 1 6 : Atmospheric side vertical movement mechanism 1601 : Up-and-down moving mechanism 1 7 : Heating heater 18, 1801, 1802, 1803, 1804, 1805: valve 19, 1901, 1902: Pressure gauge -19- 201127973 20 : 21, 2 3 : 40 : 50 : Control device 22: Electromagnetic material for gasification of the magnet compartment wall -20