JP2004047452A - Apparatus for manufacture - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To raise a utilization efficiency of a vapor deposition material, to reduce a manufacturing cost of a light emitting device comprising an organic light emitting element, and to shorten the manufacture time required for manufacturing the light emitting device. <P>SOLUTION: A multi-chamber type manufacturing apparatus comprises a plurality of film-forming chambers. A first film-forming chamber is used for vapor deposition with a first substrate. A second film-forming chamber is used for vapor deposition with a second substrate. A plurality of organic compound layers are stacked in each of the film-forming chambers, for improved throughput. The same vapor depositions can be performed in parallel with the substrates in the plurality of film-forming chambers, while the other film-forming chamber is cleaned. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a manufacturing apparatus used for forming a material that can be formed by evaporation (hereinafter, referred to as an evaporation material) and a method for manufacturing a light-emitting device represented by an EL element. In particular, the present invention is an effective technique when an organic material is used as a deposition material to manufacture a light-emitting device. Note that a light-emitting device in this specification refers to an image display device, a light-emitting device, or a light source (including a lighting device). Further, a module in which a connector, for example, an FPC (Flexible printed circuit) or TAB (Tape Automated Bonding) tape or a TCP (Tape Carrier Package) is attached to the light emitting device, or a module in which a printed wiring board is provided at the tip of the TAB tape or TCP. Alternatively, all the modules in which an IC (integrated circuit) is directly mounted on a light emitting element by a COG (Chip On Glass) method are included in the light emitting device.
[0002]
[Prior art]
In recent years, research on a light emitting device having an EL element as a self-luminous element has been actively conducted, and in particular, a light emitting device using an organic material as an EL material has attracted attention. This light emitting device is also called an organic EL display (OELD: Organic EL Display) or an organic light emitting diode (OLED: Organic Light Emitting Diode).
[0003]
Note that the EL element includes a layer containing an organic compound capable of obtaining luminescence (Electro Luminescence) generated by application of an electric field (hereinafter, referred to as an EL layer), an anode, and a cathode. Luminescence of an organic compound includes light emission (fluorescence) when returning from a singlet excited state to a ground state and light emission (phosphorescence) when returning to a ground state from a triplet excited state. The light-emitting device manufactured by the film formation method can be applied to the case where either light emission is used.
[0004]
Unlike a liquid crystal display device, a light emitting device is of a self-luminous type and has a feature that there is no problem of a viewing angle. That is, as a display used outdoors, it is more suitable than a liquid crystal display, and its use in various forms has been proposed.
[0005]
An EL element has a structure in which an EL layer is sandwiched between a pair of electrodes. The EL layer usually has a stacked structure. Typically, a laminated structure of “hole transport layer / light-emitting layer / electron transport layer” is given. This structure has a very high luminous efficiency, and most light-emitting devices currently under research and development adopt this structure.
[0006]
In addition, a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer, or a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer / an electron injection layer are stacked in this order on the anode. The structure is also good. The light emitting layer may be doped with a fluorescent dye or the like. Further, these layers may be formed entirely using a low molecular material, or may be formed entirely using a high molecular material.
[0007]
In addition, the EL material forming the EL layer is roughly classified into a low molecular (monomer) material and a high molecular (polymer) material. Of these, the low molecular material is mainly formed by vapor deposition.
[0008]
EL materials are extremely susceptible to deterioration, and are easily oxidized and deteriorated by the presence of oxygen or water. Therefore, a photolithography step cannot be performed after the film formation, and in order to perform patterning, the film needs to be separated at the same time as the film formation using a mask having an opening (hereinafter, referred to as an evaporation mask). Therefore, most of the sublimated organic EL material adhered to the inner wall of the film formation chamber or to the deposition shield (a protection plate for preventing the vapor deposition material from adhering to the inner wall of the film formation chamber). Therefore, it is necessary for the vapor deposition apparatus to periodically perform maintenance such as cleaning to remove deposits on the inner wall of the film formation chamber and the deposition prevention shield. During the maintenance, the production line is temporarily stopped for mass production. Inevitable.
[0009]
Further, in the conventional vapor deposition apparatus, in order to increase the uniformity of the film thickness, the distance between the substrate and the vapor deposition source is widened, and the apparatus itself has been increased in size. Further, as shown in FIG. 22, the conventional vapor deposition apparatus has a structure in which a uniform film is obtained by further rotating the substrate with a distance of 1 m or more between the substrate and the vapor deposition source. Furthermore, since the evaporation apparatus has a structure in which the substrate is rotated, there is a limit to the evaporation apparatus intended for a large-area substrate. In addition, since the distance between the substrate and the evaporation source is wide, the film forming speed is slow, and the time required for exhausting the film in the film forming chamber is long, and the throughput is low.
[0010]
In addition, the conventional vapor deposition apparatus has a very low utilization efficiency of expensive EL materials of about 1% or less, and the manufacturing cost of the light emitting device has been extremely high.
[0011]
[Problems to be solved by the invention]
EL materials are very expensive, and the unit price per gram is several steps higher than the unit price per gram of gold, and it is desired to use them as efficiently as possible. However, the use efficiency of expensive EL materials is low in the conventional vapor deposition apparatus.
[0012]
An object of the present invention is to provide a vapor deposition apparatus and a manufacturing apparatus which enhance the use efficiency of an EL material, are excellent in uniformity, and are excellent in throughput.
[0013]
Since vapor deposition is performed in a vacuum, it takes a long time to evacuate the film formation chamber, or the time required for each process is different for each processing chamber, so it is difficult to design as an automated process. There are limits to improving productivity. In particular, since it takes a long time to deposit and laminate a layer containing an organic compound, there is a limit in reducing the processing time per substrate. Thus, the present invention also has an object to reduce the processing time per substrate.
[0014]
Another object of the present invention is to provide a manufacturing apparatus capable of maintaining a film forming chamber without temporarily stopping a manufacturing line.
[0015]
In addition, the present invention provides, for example, a substrate having a large area such as 320 mm × 400 mm, 370 mm × 470 mm, 550 mm × 650 mm, 600 mm × 720 mm, 680 mm × 880 mm, 1000 mm × 1200 mm, 1100 mm × 1250 mm, 1150 mm × 1300 mm. Thus, a method for efficiently depositing an EL material is provided.
[0016]
Further, the present invention also provides a manufacturing system capable of avoiding contamination of the EL material with impurities.
[0017]
[Means for Solving the Problems]
According to the present invention, in a multi-chamber type manufacturing apparatus including a plurality of film formation chambers, a first film formation chamber for vapor deposition on a first substrate and a second film formation chamber for vapor deposition on a second substrate are provided. In each of the film forming chambers, a plurality of organic compound layers are stacked in parallel (parallel) to reduce the processing time per substrate. That is, after carrying the first substrate from the transfer chamber into the first film formation chamber, the second substrate is transferred from the transfer chamber to the second film formation chamber while vapor deposition is performed on the first substrate. The substrate is loaded and vapor deposition is performed on the second substrate. In FIG. 1, since four film forming chambers are provided in the transfer chamber 102, as shown in FIG. 6A showing an example of a sequence from the loading of the substrate to the unloading of the substrate, four substrates are transferred to the respective substrates. It is possible to carry into the film formation chamber and perform vapor deposition sequentially and in parallel.
[0018]
In the present invention, at the time of mass production, at least a plurality of vapor deposition chambers and heating chambers are provided in order to match the tact time, and the other chamber having a relatively short processing time may be a single chamber. The present invention enables efficient mass production.
[0019]
Configuration 1 of the invention disclosed in this specification includes:
A manufacturing apparatus having a load chamber, a transfer chamber connected to the load chamber, and a plurality of film formation chambers connected to the transfer chamber,
The plurality of film formation chambers are connected to a vacuum exhaust processing chamber that evacuates the film formation chamber, and includes an alignment unit that aligns a mask and a substrate, a deposition source, and a unit that heats the deposition source. And
In the manufacturing apparatus, at least two of the plurality of film forming chambers perform vapor deposition on a substrate carried into each of the film forming chambers in parallel.
[0020]
In addition, not only a film formation chamber for a layer containing an organic compound, but also a plurality of electrodes (cathode or anode) formed thereon, a film formation chamber for forming a protective film, a sealing chamber, and a plurality of pretreatment chambers are provided. Configuration 2 of the invention disclosed in this specification may be formed in parallel.
A manufacturing apparatus having a load chamber, a transfer chamber connected to the load chamber, and a plurality of film formation chambers connected to the transfer chamber, and a sealing chamber,
The plurality of film formation chambers are connected to a vacuum exhaust processing chamber that evacuates the film formation chamber, and includes an alignment unit that aligns a mask and a substrate, a deposition source, and a unit that heats the deposition source. And
In at least two of the plurality of film forming chambers, vapor deposition is performed on a substrate carried into each of the film forming chambers in parallel,
A plurality of the sealing chambers are provided, and the substrate is allocated to one of the plurality of sealing chambers and sealed, respectively.
[0021]
According to the present invention, although the number of substrates to be processed is reduced, as shown in FIG. 6B showing an example of a sequence from the loading of the substrate to the unloading of the substrate, the manufacturing is performed even while the fourth film forming chamber is maintained. The vapor deposition can be sequentially performed in the first to third film forming chambers without temporarily stopping the line. Configuration 3 of the invention disclosed in the present specification includes:
A manufacturing apparatus having a load chamber, a transfer chamber connected to the load chamber, and a plurality of film formation chambers connected to the transfer chamber,
The plurality of film formation chambers are connected to a vacuum exhaust processing chamber that evacuates the film formation chamber, and includes an alignment unit that aligns a mask and a substrate, a deposition source, and a unit that heats the deposition source. And
In at least two of the plurality of film forming chambers, vapor deposition is performed on a substrate carried into each of the film forming chambers in parallel, and in at least one film forming chamber, cleaning of the film forming chamber is performed. Is carried out.
[0022]
In the case of forming a light emitting device of monochromatic light emission, as shown in FIG. 2A showing a sequence from substrate loading to substrate unloading, a hole transport layer (referred to as HTL) and light emission in the same film forming chamber. When the layer and the electron transport layer (referred to as ETL) are continuously laminated, the throughput is improved. When a hole transporting layer, a light emitting layer, and an electron transporting layer are continuously laminated in the same film forming chamber, as shown in FIG. Source holder). According to the vapor deposition device of FIG. 9, the utilization efficiency of the vapor deposition material is improved.
[0023]
In each of the above structures, in at least two of the plurality of deposition chambers, deposition of a layer containing the same organic compound is performed in parallel.
[0024]
Further, as shown in FIG. 6A, an example of a sequence from the loading of the substrate to the unloading of the substrate, the paths into which the substrates are loaded are divided into the same number of paths as the number of the film forming chambers arranged in the transfer chamber. In this way, film formation is performed efficiently and sequentially. An example of the path from the loading of one substrate to the unloading is schematically indicated by an arrow in FIG. Configuration 4 disclosed in the present specification includes:
A manufacturing apparatus having a load chamber, a transfer chamber connected to the load chamber, and a plurality of film formation chambers connected to the transfer chamber,
The plurality of film formation chambers are connected to a vacuum exhaust processing chamber that evacuates the film formation chamber, and includes an alignment unit that aligns a mask and a substrate, a deposition source, and a unit that heats the deposition source. And
The plurality of substrates carried into the load chamber are distributed to and carried into one of the plurality of film formation chambers in the transfer chamber, and each substrate has one of the same number of different paths as the number of the film formation chambers. A manufacturing apparatus characterized by being processed in a single process.
[0025]
In the case of forming a full-color light-emitting device, as shown in FIG. 2B, it is preferable that a hole transport layer, a light-emitting layer, and an electron transport layer are successively stacked in the same deposition chamber. When a hole transporting layer, a light emitting layer, and an electron transporting layer are successively laminated in the same film forming chamber, a film forming apparatus as shown in FIG. An evaporation apparatus provided with a plurality of at least three or more evaporation source holders that move in the Y direction may be used. As shown in FIG. 4, which shows a sequence from the loading of the substrate to the unloading of the substrate, three different deposition chambers (a deposition chamber for a red light emitting element, a deposition chamber for a blue light emitting element, and a deposition chamber for a green light emitting element). All the organic layers required in the film chamber), for example, a hole transport layer, a light emitting layer, and an electron transport layer may be continuously laminated. For example, in a first chamber, a hole transport layer serving as a red light emitting element, a light emitting layer, and an electron transport layer are selectively laminated with a deposition mask (R), and in a second chamber, a hole transport layer serving as a blue light emitting element is provided. The layer, the light-emitting layer, and the electron transport layer are selectively laminated with a vapor deposition mask (B), and the hole transport layer, the light-emitting layer, and the electron transport layer serving as a green light-emitting element are formed in a third chamber with a vapor deposition mask (G). A full color display is realized by selectively laminating the layers. In FIG. 4, mask alignment is performed before vapor deposition, and a film is formed only in a predetermined region.
[0026]
When a hole transporting layer, a light emitting layer, and an electron transporting layer are stacked in one chamber, for example, in order to obtain a full color, for example, a material (a hole transporting layer or a material optimal for one color (R, G, or B)) is used. The organic material that becomes the electron transport layer) can be appropriately selected. Further, it is a feature of the present invention that the film thicknesses thereof can be changed according to the colors. Therefore, the hole transport layer, light emitting layer, and electron transport layer for R, the hole transport layer, light emitting layer, and electron transport layer for G, and the hole transport layer, light emitting layer, and electron transport layer for B are used. It is possible to make all nine types of layers all different materials. Note that an organic material serving as a hole transport layer or an electron transport layer may be a common material.
[0027]
In the case where the R, G, and B hole transport layers, the light-emitting layers, and the electron transport layers are stacked in three different film formation chambers, an example of the path of one substrate is simply indicated by an arrow in FIG. For example, the first substrate is carried into the first film formation chamber, and a layer containing a red light-emitting organic compound is stacked and formed. Then, the substrate is carried out, and then the second substrate is carried into the second film formation chamber to emit green light. The second substrate may be carried into the first film formation chamber and the layer containing the organic compound emitting red light may be formed in a stacked manner while the layers containing the organic compound are stacked and formed. The second substrate is carried into the second film formation chamber while the substrate is carried into the third film formation chamber, and the layer containing the organic compound emitting blue light is stacked and formed. What is necessary is just to carry in to one film-forming chamber, and to laminate | stack sequentially each.
[0028]
In addition, the present invention is not limited to a structure in which a hole transport layer, a light emitting layer, and an electron transport layer are continuously stacked in the same chamber, but may be a plurality of connected chambers. The layers may be laminated. For example, a hole transport layer serving as a green light-emitting element is formed in a first chamber, a light-emitting layer serving as a green light-emitting element is formed in a second chamber, and an electron transport layer serving as a green light-emitting element is formed in a third chamber. A layer containing a green light-emitting organic compound may be stacked to form a layer.
[0029]
In the above description, as a typical example, an example in which three layers of a hole transport layer, a light-emitting layer, and an electron transport layer are stacked as a layer containing an organic compound disposed between a cathode and an anode has been described. There is no particular limitation, and a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer, or a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer / an electron injection layer are laminated on the anode in this order. A structure, a two-layer structure, or a single-layer structure may be used. The light emitting layer may be doped with a fluorescent dye or the like. Further, as the light emitting layer, there are a light emitting layer having a hole transporting property, a light emitting layer having an electron transporting property, and the like. All of these layers may be formed using a low molecular material, or one or some of them may be formed using a high molecular material. In this specification, all layers provided between the cathode and the anode are collectively referred to as a layer containing an organic compound (EL layer). Therefore, the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer are all included in the EL layer. The layer containing an organic compound (EL layer) may also contain an inorganic material such as silicon.
[0030]
Note that a light-emitting element (EL element) includes a layer containing an organic compound from which luminescence (Electro Luminescence) generated by application of an electric field is obtained (hereinafter, referred to as an EL layer), an anode, and a cathode. Luminescence in an organic compound includes light emission when returning from a singlet excited state to a ground state (fluorescence) and light emission when returning from a triplet excited state to a ground state (phosphorescence), which are produced by the present invention. The light emitting device can be applied to the case of using either light emission.
[0031]
In the light emitting device of the present invention, a driving method for screen display is not particularly limited, and for example, a dot sequential driving method, a line sequential driving method, a plane sequential driving method, or the like may be used. Typically, a line-sequential driving method is used, and a time-division grayscale driving method or an area grayscale driving method may be used as appropriate. Further, the video signal input to the source line of the light emitting device may be an analog signal or a digital signal, and a drive circuit or the like may be appropriately designed in accordance with the video signal.
[0032]
BEST MODE FOR CARRYING OUT THE INVENTION
An embodiment of the present invention will be described below.
[0033]
(Embodiment 1)
Here, FIG. 1 shows an example of a multi-chamber manufacturing apparatus in which manufacturing from the first electrode to sealing is fully automated.
[0034]
FIG. 1 shows gates 100a to 100s, an extraction chamber 119, transfer chambers 104a, 108, 114, 118, delivery chambers 105, 107, a charging chamber 101, a first film formation chamber 106A, and a second film formation. The chamber 106B, the third film forming chamber 106C, the fourth film forming chamber 106D, the other film forming chambers 109a, 109b, 113a, 113b, the processing chambers 120a, 120b, and the installation chambers 126A, 126B for installing the evaporation source. , 126C, 126D, pretreatment chambers 103a, 103b, first sealing chamber 116a, second sealing chamber 116b, first stock chamber 130a, second stock chamber 130b, cassette chambers 120a, 120b, tray This is a multi-chamber manufacturing apparatus having a mounting stage 121 and a cleaning chamber 122.
[0035]
Hereinafter, a procedure in which a substrate provided with a thin film transistor, an anode (first electrode), and an insulator covering an end portion of the anode in advance is loaded into the manufacturing apparatus illustrated in FIG.
[0036]
First, the substrate is set in the cassette chamber 120a or the cassette chamber 120b. When the substrate is a large substrate (for example, 300 mm × 360 mm), the substrate is set in the cassette chamber 120 a or 120 b. When the substrate is a normal substrate (for example, 127 mm × 127 mm), the substrate is transferred to the tray mounting stage 121 and the tray (for example, 300 mm × 360 mm).
[0037]
Next, the substrate provided with the plurality of thin film transistors, the anode, and the insulator covering the end of the anode is transported to the transport chamber 118, and further transported to the cleaning chamber 122, where impurities (such as fine particles) on the substrate surface are removed with a solution. Remove. When cleaning is performed in the cleaning chamber 122, the substrate is set under the atmospheric pressure with the surface on which the film is to be formed facing downward.
[0038]
Before forming a film containing an organic compound, it is preferable to perform annealing for degassing in vacuum in order to remove moisture and other gases contained in the substrate. The wafers may be transported to the pretreatment chambers 103a and 103b, where annealing may be performed. In the case where a film containing an organic compound formed in an unnecessary portion is to be removed, the film may be transported to the pretreatment chambers 103a and 103b and a stack of the organic compound film may be selectively removed. Each of the pretreatment chambers 103a and 103b has a plasma generation unit, and performs dry etching by exciting one or more types of gas selected from Ar, H, F, and O to generate plasma. Here, an example is shown in which two pretreatment chambers 103a and 103b are provided so that processing can be performed on two substrates almost in parallel.
[0039]
Next, the substrate is transferred to the preparation chamber 101 from the transfer chamber 118 provided with the substrate transfer mechanism. In the manufacturing apparatus of the present embodiment, the loading chamber 101 is provided with a substrate reversing mechanism, and the substrate can be appropriately reversed. The preparation chamber 101 is connected to a vacuum exhaust processing chamber, and it is preferable that the chamber is evacuated and then an inert gas is introduced to maintain the atmospheric pressure.
[0040]
Next, it is transferred to the transfer chamber 102 connected to the preparation chamber 101. It is preferable to pre-evacuate and maintain a vacuum so that moisture and oxygen are not present in the transfer chamber 102 as much as possible.
[0041]
The vacuum evacuation chamber is provided with a magnetically levitated turbo molecular pump, a cryopump, or a dry pump. As a result, the ultimate vacuum of the transfer chamber connected to the charging chamber is reduced to 10 ^-5 -10 ^-6 It is possible to set the pressure to Pa, and it is possible to control the reverse diffusion of impurities from the pump side and the exhaust system. In order to prevent impurities from being introduced into the apparatus, an inert gas such as nitrogen or a rare gas is used as a gas to be introduced. These gases introduced into the apparatus are those that have been highly purified by a gas purifier before being introduced into the apparatus. Therefore, it is necessary to provide a gas purifier so that the gas is introduced into the vapor deposition device after being highly purified. Accordingly, oxygen, water, and other impurities contained in the gas can be removed in advance, so that introduction of these impurities into the device can be prevented.
[0042]
Next, the substrate is transferred from the transfer chamber 102 to the first to fourth film formation chambers 106A to 106D. Then, an organic compound layer made of a low molecule to be a hole injection layer, a hole transport layer or a light emitting layer is formed.
[0043]
An organic compound layer which emits light of a single color (specifically, white) or full color (specifically, red, green, or blue) can be formed as the entire light-emitting element; here, white light is emitted. An example in which an organic compound layer is simultaneously formed in each of the film forming chambers 106A, 106B, 106C, and 106D (the film forming process is performed almost in parallel) will be described.
[0044]
Note that an organic compound layer that emits white light is a three-wavelength type containing three primary colors of red, green, and blue and a blue / yellow or blue-green / orange color when light-emitting layers having different emission colors are stacked. The two-wavelength type using the complementary color relationship is roughly classified. Here, an example of obtaining a white light emitting element using the three-wavelength type will be described.
[0045]
First, the film forming chambers 106A, 106B, 106C, and 106D will be described. A movable evaporation source holder is installed in each of the film forming chambers 106A, 106B, 106C, and 106D. A plurality of the vapor deposition source holders are prepared. An aromatic diamine (TPD) for forming a white light emitting layer is provided in a first vapor deposition source holder, p-EtTAZ for forming a white light emitting layer in a second vapor deposition source holder, Alq for forming a white light emitting layer is provided in the third evaporation source holder. ₃ Alq forming a white light emitting layer is provided in the fourth evaporation source holder. ₃ Material to which NileRed, which is a red light-emitting dye, is added, and the fifth evaporation source holder is Alq. ₃ Is enclosed in this state and installed in each film forming chamber.
[0046]
It is preferable to install the EL material in these film forming chambers by using a manufacturing system described below. That is, it is preferable to form a film using a container (typically, a crucible) in which an EL material is stored in advance by a material maker. Further, it is preferable that the crucible is installed without being exposed to the atmosphere when it is installed, and it is preferable that the crucible is introduced into the film forming chamber while being sealed in the second container when transported from a material maker. Desirably, the installation chambers 126A, 126B, 126C, 126D having vacuum exhaust means connected to each of the film formation chambers 106A, 106B, 106C, 106D are evacuated or have an inert gas atmosphere, in which the crucible is moved from the second container. Is taken out and a crucible is set in the film forming chamber. By doing so, the crucible and the EL material stored in the crucible can be prevented from being contaminated. The installation chambers 126A, 126B, 126C, and 126D may be stocked with a metal mask.
[0047]
Next, a film forming process will be described. In the film forming chamber 106A, a mask is transported and installed from the above-described installation chamber as needed. Thereafter, the first to fifth deposition source holders start moving in order, and the deposition is performed on the substrate. Specifically, the TPD is sublimated from the first evaporation source holder by heating, and is evaporated on the entire surface of the substrate. Thereafter, p-EtTAZ is sublimated from the second evaporation source holder and Alq is transferred from the third evaporation source holder. ₃ Is sublimated and Alq is transferred from the fourth evaporation source holder. ₃ : NileRed is sublimated and Alq is transferred from the fifth evaporation source holder. ₃ Is sublimated and deposited on the entire surface of the substrate.
[0048]
When the evaporation method is used, for example, the degree of vacuum is 5 × 10 ^-3 Torr (0.665 Pa) or less, preferably 10 ^-4 -10 ^-6 It is preferable to perform vapor deposition in a film formation chamber evacuated to Pa.
[0049]
Note that the evaporation source holders on which the respective EL materials are provided are provided in the respective film forming chambers, and the vapor deposition is similarly performed in the film forming chambers 106B to 106D. That is, the same film forming process can be performed on the four substrates almost in parallel. FIG. 7 schematically shows a path through which two of the four substrates are processed. For this reason, even if a certain film formation chamber is performing maintenance or cleaning, film formation processing can be performed in the remaining film formation chambers, so that the tact time of film formation can be improved, and the throughput of the light emitting device can be improved.
[0050]
Next, after transferring the substrate from the transfer chamber 102 to the transfer chamber 105, the substrate is further transferred from the transfer chamber 105 to the transfer chamber 104a without touching the atmosphere.
[0051]
Next, the substrate is transferred to the film formation chamber 109a or 109b by a transfer mechanism provided in the transfer chamber 104a to form a cathode. The cathode is formed of a very thin metal film (an alloy such as MgAg, MgIn, AlLi, or CaN, or an element belonging to Group 1 or 2 of the periodic table and aluminum together with an extremely thin metal film formed by an evaporation method using resistance heating. (Lower layer) composed of a film formed by a sputtering method, a transparent conductive film (ITO (indium oxide tin oxide alloy), indium zinc oxide alloy (In ₂ O ₃ —ZnO), zinc oxide (ZnO), etc.) and a stacked film. Therefore, it is preferable to arrange a film forming chamber for forming a thin metal film in this manufacturing apparatus.
[0052]
Through the above steps, a light-emitting element having a stacked structure illustrated in FIGS. 17A and 17B is formed.
[0053]
Next, without being exposed to the air, the protective film is transferred from the transfer chamber 104a to the deposition chambers 113a and 113b to be formed of a silicon nitride film or a silicon nitride oxide film. Here, a target made of silicon, a target made of silicon oxide, or a target made of silicon nitride is provided in the film formation chambers 113a and 113b. For example, a silicon nitride film can be formed by using a silicon target and setting the atmosphere in a deposition chamber to a nitrogen atmosphere or an atmosphere containing nitrogen and argon. FIG. 1 shows an example in which two film forming chambers 113a and 113b are provided so that a protective film can be formed on two substrates almost in parallel.
[0054]
Next, the substrate on which the light-emitting elements are formed is transferred from the transfer chamber 104a to the transfer chamber 107 without being exposed to the atmosphere, and further transferred from the transfer chamber 107 to the transfer chamber 114. Next, the substrate on which the light emitting elements are formed is transferred from the transfer chamber 114 to the first sealing chamber 116a or the second sealing chamber 116b. Note that in the first sealing chamber 116a and the second sealing chamber 116b, a sealant for later bonding to a substrate or sealing is formed. FIG. 1 shows an example in which two sealing chambers 116a and 116b are provided so that a bonding process can be performed on two substrates almost in parallel.
[0055]
The sealing substrate is prepared by being set in the first stock chamber 130a and the second stock chamber 130b from outside. Note that it is preferable to perform annealing in vacuum in advance to remove impurities such as moisture, for example, in the first stock chamber 130a and the second stock chamber 130b. In the case where a sealing material for bonding to a substrate provided with a light-emitting element is formed on the sealing substrate, the sealing material is formed in the first stock chamber 130a and the second stock chamber 130b, and the sealing material is formed. The sealing substrate is transported to the first sealing chamber 116a and the second sealing chamber 116b. Note that a drying agent may be provided on the sealing substrate in the first sealing chamber 116a and the second sealing chamber 116b. Further, a vapor deposition mask used for vapor deposition may be stored in the sealing substrate stock chambers 130a and 130b.
[0056]
Next, in order to degas the substrate provided with the light-emitting element, annealing is performed in a vacuum or an inert atmosphere, and then the sealing substrate provided with the sealant and the substrate provided with the light-emitting element are attached. Match. Further, the enclosed space is filled with nitrogen or an inert gas. Note that although an example in which a sealant is formed over a sealing substrate is described here, the present invention is not particularly limited thereto. A sealant may be formed over a substrate over which a light-emitting element is formed.
[0057]
Next, the pair of bonded substrates is irradiated with UV light by an ultraviolet irradiation mechanism provided in the sealing chambers 116a and 116b to cure the sealing material. In addition, here, the ultraviolet curing and thermosetting resin is used as the sealing material, but it is not particularly limited as long as it is an adhesive, and a curing resin or the like may be used only with ultraviolet.
[0058]
Instead of filling the closed space with an inert gas, a resin may be filled. In the case of a bottom emission type, since the cathode does not transmit light, the resin material to be filled is not particularly limited, and an ultraviolet curable resin or an opaque resin may be used. Therefore, ultraviolet curable resin cannot be used because it damages the EL layer. Therefore, in the case of the top emission type, it is preferable to use a transparent resin that is thermoset as the resin to be filled.
[0059]
Next, the pair of bonded substrates is transported from the sealing chamber 116 to the transport chamber 114 and from the transport chamber 114 to the unloading chamber 119 and taken out.
[0060]
After being taken out of the take-out chamber 119, the sealing material is cured by heating. When a top emission type is used and a thermosetting resin is filled, it can be cured at the same time as the heat treatment for curing the sealing material.
[0061]
As described above, by using the manufacturing apparatus illustrated in FIG. 1, it is not necessary to expose the light-emitting element to the atmosphere until the light-emitting element is completely enclosed in a closed space; thus, a highly reliable light-emitting device can be manufactured. Note that in the transfer chamber 114, a vacuum and a nitrogen atmosphere at atmospheric pressure are repeated, but it is desirable that the transfer chambers 102, 104a, and 108 always maintain a vacuum.
[0062]
Although not shown here, there is provided a control controller for controlling the path for moving the substrate to each processing chamber to realize full automation.
[0063]
Further, a substrate on which a transparent conductive film is formed as an anode is carried into the manufacturing apparatus shown in FIG. 1, and a light-emitting element which emits light in a direction opposite to the light-emitting direction due to the above-described laminated structure (light generated in a layer containing an organic compound is transparent). It is also possible to form a structure for taking out from the anode, which is an electrode, to the TFT, which is referred to as a bottom emission structure in this case.
[0064]
When both the anode and the cathode are made of a transparent or translucent material, a structure in which light emitted from a layer containing an organic compound is extracted to both the upper surface and the lower surface (here, a dual emission structure) can be formed. It is.
[0065]
FIG. 21 shows that when two types of substrates having different sizes are simultaneously manufactured in parallel, a plurality of extraction chambers are required. Therefore, two extraction chambers are provided, and a mask stock chamber and a coating chamber are further provided. This is an example in which is provided. Note that the same reference numerals as in FIG. 1 are used.
[0066]
In FIG. 21, 100t is a gate, 1003 is a coating room, 1013 is a mask stock room, 1019a and 1019b are take-out rooms.
[0067]
The mask stock chamber 1013 is a place for stocking a vapor deposition mask used for vapor deposition. The vapor mask is conveyed and set to each film forming chamber when performing vapor deposition. In particular, if the mask has a large area, it is difficult to stock the mask in the installation room. Therefore, it is preferable to separately provide a mask stock room as shown in FIG. Further, for example, a substrate may be stocked in the mask stock chamber 1013 in addition to the evaporation mask.
[0068]
In the coating chamber 1003, a layer made of a polymer material may be formed by an inkjet method, a spin coating method, or the like. For example, a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS) acting as a hole injection layer (anode buffer layer) on the first electrode (anode), polyaniline / camphorsulfonic acid An aqueous solution (PANI / CSA), PTPDES, Et-PTPDEK, PPBA, or the like may be applied to the entire surface and fired.
[0069]
In the case where PEDOT / PSS is formed by spin coating, the film is formed on the entire surface, so that the end face, the peripheral portion, the terminal portion, the connection region between the cathode and the lower wiring of the substrate can be selectively removed. Preferably, for example, O using a mask in the pretreatment chamber 103a ₂ It is preferable to remove by ashing or the like.
[0070]
(Embodiment 2)
FIGS. 8A to 8C illustrate a film formation apparatus in which a substrate and an evaporation source are relatively moved. 8A is a cross-sectional view in the X direction (cross section taken along the dotted line AA ′), FIG. 8B is a cross-sectional view in the Y direction (cross section taken along the dotted line BB ′), and FIG. 8C is a top view. . Note that FIGS. 8A to 8C show the state during the vapor deposition.
[0071]
8A to 8C, the evaporation source holder in which the container in which the evaporation material is sealed is moved at a certain pitch with respect to the substrate during the evaporation or the evaporation is performed. The substrate is moved at a certain pitch with respect to the source. Further, it is preferable to move the deposition source holder at a certain pitch so that the ends (hems) of the sublimated deposition material overlap (overlap).
[0072]
This evaporation source holder may be singular or plural, but if provided for each laminated layer of EL layers, efficient and continuous evaporation can be achieved. The number of containers provided in the evaporation source holder may be one or more, or a plurality of containers in which the same evaporation material is sealed may be provided. Note that in the case where containers having different evaporation materials are provided, a film can be formed on a substrate in a state where the sublimated evaporation materials are mixed (this is referred to as co-evaporation).
[0073]
8A to 8C, a film forming chamber 11 includes a substrate holder 12, an evaporation source holder 17 in which an evaporation shutter 15 is installed, and a unit (not shown) for moving the evaporation source holder. Means for creating a reduced-pressure atmosphere. In the film forming chamber 11, a substrate 13 and an evaporation mask 14 are installed. It is also preferable to confirm the alignment of the evaporation mask using a CCD camera (not shown). A container in which a vapor deposition material 18 is sealed is provided in the vapor deposition source holder 17. The film forming chamber 11 has a degree of vacuum of 5 × 10 ^-3 Torr (0.665 Pa) or less, preferably 10 ^-4 -10 ^-6 It is evacuated to Pa.
[0074]
At the time of vapor deposition, the vapor deposition material is previously sublimated (vaporized) by resistance heating, and scatters in the direction of the substrate 13 by opening the shutter 15 during vapor deposition. The evaporated material 19 scatters upward and is selectively deposited on the substrate 13 through an opening provided in the deposition mask 14. It is preferable that a control device such as a PC can control the film forming speed, the moving speed of the evaporation source holder, and the opening and closing of the shutter. The deposition rate can be controlled by the moving speed of the deposition source holder.
[0075]
Although not shown, vapor deposition can be performed while measuring the film thickness of the vapor deposition film using a quartz oscillator provided in the film formation chamber 11. When measuring the film thickness of the deposited film using this quartz oscillator, a change in the mass of the film deposited on the quartz oscillator can be measured as a change in the resonance frequency.
[0076]
8A to 8C, the distance d between the substrate 13 and the evaporation source holder 17 is typically 30 cm or less, preferably 20 cm or less, more preferably It is narrowed to 5 cm to 15 cm, and the use efficiency and throughput of the vapor deposition material are remarkably improved.
[0077]
In the vapor deposition apparatus, the vapor deposition source holder 17 includes a container (typically, a crucible), a heater disposed outside the container via a heat equalizing member, and a heat insulating layer provided outside the heater. It is composed of an outer cylinder containing these, a cooling pipe turned outside of the outer cylinder, and a vapor deposition shutter 15 for opening and closing the opening of the outer cylinder including the opening of the crucible. Note that the heater may be a container that can be conveyed while being fixed to the container. The container is made of a material such as a sintered body of BN, a composite sintered body of BN and AlN, quartz, or graphite, and can withstand high temperature, high pressure, and reduced pressure.
[0078]
Further, the evaporation source holder 17 is provided with a mechanism capable of moving in the X direction or the Y direction in the film forming chamber 11 while keeping the horizontal position. Here, the evaporation source holder 17 is moved in a zigzag manner as shown in FIG. 9A or 9B in a two-dimensional plane. Further, the moving pitch of the evaporation source holder 17 may be appropriately adjusted to the interval between insulators. Note that the insulator 10 is arranged in a stripe shape so as to cover the end of the first electrode 21.
[0079]
9A and 9B, the timing at which the evaporation source holders A, B, C, and D start moving may be after the previous evaporation source holder is stopped or before the stop. There may be. For example, an organic material having a hole transporting property is set in the deposition holder A, an organic material to be a light emitting layer is set in the deposition holder B, an organic material having an electron transporting property is set in the deposition holder C, and the deposition holder D is set in the deposition holder D. If a material to be a cathode buffer is set, these material layers can be continuously laminated in the same chamber. In the case where the movement of the next deposition source holder is started before the deposited film is solidified, a region (mixed region) in which the deposition material is mixed at the interface with each film in the EL layer having a laminated structure. Can be formed.
[0080]
According to the present invention in which the substrate and the evaporation source holders A, B, C, and D move relatively, the apparatus can be downsized without having to provide a long distance between the substrate and the evaporation source holder. In addition, since the vapor deposition apparatus is small, the sublimated vapor deposition material is less likely to adhere to the inner wall of the film formation chamber or the anti-adhesion shield, and the vapor deposition material can be used without waste. Further, in the vapor deposition method of the present invention, since it is not necessary to rotate the substrate, it is possible to provide a vapor deposition apparatus capable of suppressing displacement between the substrate and the mask during rotation and capable of coping with a large area substrate. Further, according to the present invention in which the evaporation source holder moves in the X-axis direction and the Y-axis direction with respect to the substrate, it becomes possible to uniformly form the evaporation film.
[0081]
The number of organic compounds provided in the evaporation source holder is not necessarily one or one, but may be plural. For example, in addition to one kind of material provided as a light-emitting organic compound in the evaporation source holder, another organic compound (dopant material) which can be a dopant may be provided together. The organic compound layer to be deposited is composed of a host material and a light emitting material (dopant material) having lower excitation energy than the host material, and the excitation energy of the dopant is the excitation energy of the hole transport region and the excitation of the electron transport layer. It is preferable to design so as to be lower than the energy. Thus, diffusion of molecular excitons of the dopant can be prevented, and the dopant can emit light effectively. If the dopant is a carrier trap type material, the recombination efficiency of carriers can be increased. The present invention also includes a case where a material capable of converting triplet excitation energy into light emission is added to the mixed region as a dopant. In forming the mixed region, the mixed region may have a concentration gradient.
[0082]
Further, when a plurality of organic compounds are provided in one deposition source holder, it is desirable that the direction in which the organic compounds evaporate so as to be mixed with each other is oblique so as to intersect at the position of the deposition target. Further, in order to perform co-evaporation, the evaporation source holder may be provided with four types of evaporation materials (for example, two types of host materials as the evaporation material a and two types of dopant materials as the evaporation material b). Further, when the pixel size is small (or when the distance between the insulators is small), the inside of the container is divided into four parts, and co-evaporation is performed so that each is appropriately evaporated, so that a precise film can be formed.
[0083]
In addition, since the distance d between the substrate 13 and the evaporation source holder 17 is typically reduced to 30 cm or less, preferably 5 cm to 15 cm, the evaporation mask 14 may be heated. Accordingly, the vapor deposition mask 14 is made of a metal material having a low coefficient of thermal expansion that is not easily deformed by heat (for example, a material having a high melting point such as tungsten, tantalum, chromium, nickel, or molybdenum or an alloy containing these elements, a material such as stainless steel, Inconel, and Hastelloy). ) Is preferably used. For example, a low thermal expansion alloy of 42% nickel and 58% iron may be used. Further, a mechanism for circulating a cooling medium (cooling water, cooling gas) through the evaporation mask may be provided to cool the heated evaporation mask.
[0084]
Further, in order to clean the deposited matter attached to the mask, it is preferable that plasma is generated in the film formation chamber by the plasma generation means, and the deposited matter attached to the mask is vaporized and exhausted to the outside of the film formation chamber. Therefore, an electrode is provided separately from the mask, and the high-frequency power supply 20 is connected to one of the electrodes.
[0085]
In addition, the film forming chamber is Ar, H, F, NF ₃ Or O, a gas introducing means for introducing one or a plurality of gases selected from O, and a means for exhausting the vaporized deposit. With the above configuration, the film formation chamber can be cleaned without touching the atmosphere during maintenance.
[0086]
For example, in order to perform cleaning, the inside of the chamber is replaced with nitrogen, and then the chamber is evacuated and a high-frequency power source (13.56 MHz) is applied to one of the chambers so that plasma is generated between the mask and the electrode (substrate shutter). Can be connected. For example, when argon and hydrogen are introduced at a flow rate of 30 sccm and stabilized, an RF power of 800 W is applied to generate plasma, and the mask and the inner wall of the chamber can be cleaned.
[0087]
Further, the film forming chamber 11 is connected to a vacuum exhaust processing chamber for evacuating the film forming chamber. The vacuum evacuation processing chamber includes a magnetic levitation type turbo molecular pump, a cryopump, or a dry pump. As a result, the ultimate vacuum degree of the film forming chamber 11 is reduced to 10 ^-5 -10 ^-6 It is possible to set the pressure to Pa, and it is possible to control the reverse diffusion of impurities from the pump side and the exhaust system. In order to prevent impurities from being introduced into the film formation chamber 11, an inert gas such as nitrogen or a rare gas is used as a gas to be introduced. These gases to be introduced are those that have been highly purified by a gas purifier before being introduced into the apparatus. Therefore, it is necessary to provide a gas purifier so that the gas is introduced into the film forming chamber 11 after being highly purified. Accordingly, oxygen, water, and other impurities contained in the gas can be removed in advance, so that introduction of these impurities into the film formation chamber 11 can be prevented.
[0088]
Further, the substrate holder 12 has a permanent magnet, and a metal deposition mask is fixed by magnetic force, and the substrate 13 sandwiched therebetween is also fixed. Here, an example in which the evaporation mask is in close contact with the substrate 13 is shown; however, a substrate holder or an evaporation mask holder which is fixed at a certain interval may be appropriately provided.
[0089]
With the film formation chamber having a mechanism for moving the evaporation source holder as described above, it is not necessary to increase the distance between the substrate and the evaporation source holder, and it is possible to uniformly form an evaporation film.
[0090]
(Embodiment 1)
Here, the structure of a container for enclosing the evaporation material and the surroundings of the evaporation source holder will be described in detail with reference to FIGS. 10A and 10B. Note that FIGS. 10A and 10B show a state in which the shutter is open.
[0091]
FIG. 10A is a cross-sectional view of the periphery of one container installed in the evaporation source holder 304, and includes a heating unit 303 provided in the evaporation source holder, a power source 307 of the heating unit, and evaporation of the container. A material 302, a filter 305 provided in the container, and a shutter 306 disposed above an opening provided in the upper part of the container are described. As the heating means, resistance heating, high frequency, laser, or the like may be used, and specifically, an electric coil may be used.
[0092]
Then, the deposition material 302 heated by the heating means 303 sublimates, and the sublimated deposition material rises upward from the opening of the container. At this time, the sublimated material having a size equal to or greater than a certain value (the size of the filter) cannot pass through the filter 305 provided in the container, returns to the container, and is sublimated again. Alternatively, the filter 305 may be formed of a highly conductive material and heated by a heating unit (not shown). This heating can prevent solidification and adhesion of the deposition material to the filter.
[0093]
By using a container having such a filter, a vapor deposition material having a uniform size is vapor-deposited, so that a film formation rate can be controlled and a uniform film thickness can be obtained, and uniform and uniform vapor deposition can be performed. it can. Of course, if uniform and uniform deposition is possible, it is not necessary to provide a filter. Note that the shape of the container is not limited to FIG.
[0094]
Next, with reference to FIG. 10B, a container in which a deposition material having a structure different from that of FIG.
[0095]
Referring to FIG. 10B, a container 311 installed in the evaporation source holder, an evaporation material 312 in the container, a first heating unit 313 provided in the evaporation source holder, and a power supply of the first heating unit. 318, a shutter 317 provided above the opening of the container, a plate 316 provided above the opening, a second heating means 314 provided so as to surround the filter, and a power supply for the second heating means. 319.
[0096]
Then, the vapor deposition material 312 heated by the first heating means 313 sublimates, and the sublimated vapor deposition material rises upward from the opening of the container 311. At this time, the sublimated material having a certain size or more cannot pass between the plate 316 provided above the opening of the container and the second heating means 314, and collides with the plate 316. Then return to the container. Since the plate 316 is heated by the second heating means 314, solidification and adhesion of the deposition material to the plate 316 can be prevented. Further, the plate 316 is preferably formed using a highly conductive material.
[0097]
In addition, the heating temperature (T ₁ ) Is the sublimation temperature (T _A ), The heating temperature of the second heating means 314 (T ₂ ) May be lower in temperature than the first heating means. This is because the vapor-deposited material once sublimated is easily sublimated and sublimates without applying an actual sublimation temperature. That is, each heating temperature is T ₁ ≧ T ₂ > T _A It should just be.
[0098]
By such a container having a configuration in which the heating means is provided around the plate, a uniform-sized deposition material is sublimated, and the sublimated material passes near the heating means. Adhesion of materials is reduced, and furthermore, a deposition rate can be controlled, a uniform film thickness can be obtained, and uniform and uniform deposition can be performed. Of course, if uniform and uniform deposition is possible, it is not necessary to provide a plate. Further, the shape of the container is not limited to FIGS. 10A and 10B, and may be a shape as shown in FIGS. 11A and 11B, for example.
[0099]
FIG. 11A illustrates an example in which a heating unit 402 is provided in an evaporation source holder 404, and a cross-sectional view of a shape example of the containers 403 and 405 in which the openings of the containers are narrowed upward is described. . Further, after the purified evaporation material is sealed in a container having a wide opening, the shape of the containers 403 and 405 shown in FIG. If the diameter of the opening of the container narrowing upward is set to the size of the deposition material to be formed into a film, the same effect as that of the filter can be obtained.
[0100]
FIG. 11B illustrates an example in which a heating unit 412 is provided in a container. The shapes of the containers 413 and 415 are the same as those in FIG. 11A, but a heating means 412 is provided in the container itself. The power supply of the heating means may be designed to be turned on when it is installed in the evaporation source holder. With such a configuration in which the heating means is provided in the container itself, heat can be sufficiently applied to the evaporation material even in a container having an opening having a shape that is difficult to heat.
[0101]
Next, a specific configuration of the evaporation source holder will be described with reference to FIG. FIGS. 12A and 12B are enlarged views of the evaporation source holder.
[0102]
FIG. 12A shows an example of a configuration in which four containers 501 in which a vapor deposition material is sealed are provided in a vapor deposition source holder 502 in a grid pattern, and a shutter 503 is provided on each container. FIG. This is a configuration example in which four containers 511 in which a vapor deposition material is sealed are linearly provided in a holder 512, and a shutter 513 is provided on each container.
[0103]
A plurality of containers 501 and 511 in which the same material is sealed may be installed in the evaporation source holders 502 and 512 shown in FIG. 12A or 12B, or a single container may be installed. Alternatively, co-evaporation may be performed with a container in which different evaporation materials (for example, a host material and a guest material) are sealed. Then, as described above, the evaporation material is sublimated by heating the container, and a film is formed on the substrate.
[0104]
Further, as shown in FIG. 12A or 12B, shutters 503 and 513 may be provided above each container to control whether or not to form a sublimated deposition material. Further, only one shutter may be provided above all the containers. Further, by this shutter, it is possible to reduce unnecessary sublimation and scattering of the evaporation material without stopping the heating of the evaporation source holder that does not form a film, that is, the standby evaporation source holder. The configuration of the evaporation source holder is not limited to that shown in FIG. 12, and may be appropriately designed by a practitioner.
[0105]
By the above evaporation source holder and container, the evaporation material can be sublimated efficiently,
Further, since the film formation can be performed in a state where the sizes of the evaporation materials are uniform, a uniform and uniform evaporation film is formed. In addition, since a plurality of evaporation materials can be provided in the evaporation source holder, co-evaporation can be easily performed. Further, an EL layer suitable for a purpose can be formed at a time without moving the film formation chamber for each EL layer film.
[0106]
(Embodiment 2)
Next, a system of a manufacturing method in which a purified evaporation material is sealed in a container as described above, and after being transported, the container is directly installed in an evaporation apparatus which is a film forming apparatus, and evaporation is performed, will be described with reference to FIG. I do.
[0107]
FIG. 13 shows a manufacturer (typically, a material maker) 618 that produces and refines an organic compound material as a vapor deposition material, and a light emitting device maker having a vapor deposition device. Describes a manufacturing system in a production factory 619.
[0108]
First, an order 610 is made from the light emitting device maker 619 to the material maker 618. The material maker 618 sublimates and purifies the vapor deposition material based on the order 610, and encloses a highly purified powdery vapor deposition material 612 in the first container 611. Thereafter, the material manufacturer 618 separates the first container 611 into the second container 621a and 621b to isolate the first container from the atmosphere so as to prevent extra impurities from adhering to the inside or outside, and to prevent contamination in the clean environment room. Store and seal. When sealing, the inside of the second containers 621a and 621b is preferably filled with vacuum or an inert gas such as nitrogen. Note that it is preferable to clean the first container 611 and the second containers 621a and 621b before purifying or storing the ultrapure evaporation material 612. In addition, the second containers 621a and 621b may be a packaging film having a barrier property for blocking entry of oxygen and moisture, but a tubular or box-shaped strong container for automatically taking out the film. It is preferable that the container has a light-shielding property.
[0109]
Thereafter, the first container 611 is conveyed 617 from the material manufacturer 618 to the light emitting device manufacturer 619 while being kept sealed in the second containers 621a and 621b.
[0110]
In the light-emitting device maker 619, the first container 611 is directly introduced into the processing chamber 613 that can be evacuated while being kept sealed in the second containers 621a and 621b. The processing chamber 613 is a vapor deposition apparatus in which a heating unit 614 and a substrate holding unit (not shown) are installed.
[0111]
Thereafter, the inside of the processing chamber 613 is evacuated to a clean state in which oxygen and moisture are reduced as much as possible. Then, the first container 611 is taken out of the second containers 621a and 621b without breaking the vacuum, and Can be provided in contact with the heating means 614 to prepare an evaporation source. Note that an object to be deposited (a substrate in this case) 615 is provided in the processing chamber 613 so as to face the first container 611.
[0112]
Next, heat is applied to the deposition material by the heating means 614 to form a deposition film 616 on the surface of the deposition target 615. The deposited film 616 thus obtained does not contain impurities, and when a light-emitting element is completed using the deposited film 616, high reliability and high luminance can be realized.
[0113]
After the film formation, the evaporation material remaining in the first container 611 may be sublimated and purified by the light emitting device maker 619. After the film formation, the first container 611 is set in the second containers 621a and 621b, taken out of the processing chamber 613, and transported to a purification chamber for sublimation purification. Therefore, the remaining evaporation material is sublimated and purified, and the evaporation material on the highly purified powder is sealed in another container. After that, the substrate is transported to the processing chamber 613 in a state where the container is sealed in the second container, and a vapor deposition process is performed. At this time, the relationship between the temperature (T3) for purifying the remaining evaporation material, the temperature around the evaporation material that is rising (T4), and the temperature around the sublimation-purified evaporation material (T5) is T3> T4. > T5 is preferably satisfied. In other words, in the case of sublimation purification, if the temperature is lowered toward the container side in which the evaporation material to be sublimated is sealed, convection occurs, and sublimation purification can be performed efficiently. Note that a purification chamber for performing sublimation purification may be provided in contact with the processing chamber 613, and may carry the sublimated and purified deposition material without using the second hermetic container.
[0114]
As described above, the first container 611 is installed in the evaporation chamber which is the processing chamber 613 without ever being exposed to the air, and performs evaporation while maintaining the purity at the stage where the evaporation material 612 is stored by the material manufacturer. To make things possible. Therefore, according to the present invention, it is possible to realize a manufacturing system that improves the throughput by fully automation, and also realizes a consistent closed system capable of avoiding contamination of the deposition material 612 purified by the material manufacturer 618 with impurities. Become. Further, since the material maker directly stores the vapor deposition material 612 in the first container 611 based on the order, only the necessary amount is provided to the light emitting device maker, and the relatively expensive vapor deposition material can be used efficiently. . Note that the first container and the second container can be reused, which leads to low cost.
[0115]
Next, the form of the container to be transported will be specifically described with reference to FIG. The second container divided into an upper portion (621a) and a lower portion (621b) used for transport is provided with fixing means 706 provided for fixing the first container provided on the upper portion of the second container, and for pressurizing the fixing means. A spring 705, a gas inlet 708 serving as a gas path for holding the second container at a reduced pressure provided in a lower part of the second container, an O-ring 707 for fixing the upper container 621a and the lower container 621b, It has a fastener 702. In the second container, a first container 611 in which a purified evaporation material is sealed is provided. Note that the second container may be formed using a material including stainless steel, and the first container may be formed using a material including titanium.
[0116]
In the material manufacturer, the purified evaporation material is sealed in the first container 611. Then, the second upper part 621a and the lower part 621b are aligned via the O-ring 707, the upper container 621a and the lower container 621b are fixed with the fastener 702, and the first container 611 is sealed in the second container. . After that, the inside of the second container is depressurized through the gas inlet 708, further replaced with a nitrogen atmosphere, the spring 705 is adjusted, and the first container 611 is fixed by the fixing means 706. Note that a desiccant may be provided in the second container. When the inside of the second container is kept in a vacuum, reduced pressure, or nitrogen atmosphere as described above, even slight adhesion of oxygen or water to the deposition material can be prevented.
[0117]
In this state, the first container 611 is transported to the light emitting device maker 619 and is directly installed in the processing chamber 613. After that, the evaporation material is sublimated by heating, and a deposition film 616 is formed.
[0118]
Next, with reference to FIGS. 15 and 16, a mechanism for installing the first container hermetically sealed and transported in the second container in the film formation chamber will be described. FIGS. 15 and 16 show a state where the first container is being conveyed.
[0119]
FIG. 15A illustrates a table 804 on which the first container or the second container is mounted, a deposition source holder 803, a rotary table 807 on which the table 804 and the deposition source holder 803 are mounted, and the first container is transported. 15B is a top view of an installation room 805 having a transfer means 802 for the installation, and FIG. 15B is a perspective view of the installation room. Further, the installation chamber 805 is arranged so as to be adjacent to the film formation chamber 806, and the atmosphere in the installation chamber can be controlled by means for controlling the atmosphere through a gas inlet. Note that the transporting means of the present invention is not limited to a configuration in which the first container is transported across the side surface of the first container as shown in FIG. A configuration may be adopted in which the sheet is conveyed by sandwiching (pinching).
[0120]
The second container is placed on the base 804 in such an installation room 805 with the fastener 702 removed. Next, the inside of the installation chamber 805 is reduced in pressure by means for controlling the atmosphere. When the pressure in the installation chamber is equal to the pressure in the second container, the second container can be easily opened. Then, the upper part 621a of the second container is removed by the transporting means 802, and the first container 611 is set on the evaporation source holder 803. Although not shown, a place where the removed upper part 621a is arranged is appropriately provided. Then, the evaporation source holder 803 moves from the installation chamber 805 to the film formation chamber 806.
[0121]
After that, the evaporation material is sublimated by the heating means provided in the evaporation source holder 803, and film formation is started. When a shutter (not shown) provided in the evaporation source holder 803 is opened during the film formation, the sublimated evaporation material is scattered in the direction of the substrate, is evaporated on the substrate, and is formed on the light emitting layer (hole transport layer, hole injection layer). Layer, an electron transport layer, and an electron injection layer).
[0122]
Then, after the vapor deposition is completed, the vapor deposition source holder 803 returns to the installation chamber 805, and the first container 611 installed in the vapor deposition source holder 803 is replaced by the transport unit 802 with the second container installed in the base 804. It is moved to a lower container (not shown) and is sealed by an upper container 621a. At this time, it is preferable that the first container, the upper container 621a, and the lower container are hermetically sealed in the transported combination. In this state, the installation chamber 805 is set to the atmospheric pressure, the second container is taken out of the installation chamber, and the fastener 702 is fixed and transported to the material maker 618.
[0123]
Next, a mechanism for installing a plurality of first containers sealed and conveyed in a second container different from FIG. 15 in a plurality of evaporation source holders will be described with reference to FIG.
[0124]
FIG. 16A illustrates a table 904 on which a first container or a second container is placed, a plurality of evaporation source holders 903, a plurality of transfer units 902 for transferring the first container, and a turntable 907. 16B is described, and FIG. 16B is a perspective view of the installation chamber 905. Further, the installation chamber 905 is arranged so as to be adjacent to the film formation chamber 906, and the atmosphere in the installation chamber can be controlled by means for controlling the atmosphere via a gas inlet.
[0125]
The plurality of first containers 611 are set on the plurality of evaporation source holders 903 by such a rotating table 907 and the plurality of transport units 902, and the plurality of first containers are mounted on the plurality of evaporation source holders on which film formation is completed. 904 can be efficiently performed. At this time, it is preferable that the first container is installed in the second container that has been transported.
[0126]
Note that the turntable 907 preferably has a function of rotating in order to efficiently carry the vapor deposition source holder that starts vapor deposition and the vapor deposition source holder that has completed vapor deposition. The turntable 907 is not limited to the above configuration, and has a function of moving the turntable 907 right and left. When the turntable 907 approaches a deposition source holder arranged in the film forming chamber 906, a plurality of May be installed in the evaporation source holder.
[0127]
The vapor deposition film formed by the vapor deposition apparatus as described above can minimize impurities to a minimum, and when a light emitting element is completed using this vapor deposition film, high reliability and luminance can be realized. In addition, with such a manufacturing system, the container sealed by the material manufacturer can be directly installed on the vapor deposition device, preventing the vapor deposition material from adhering oxygen and water, and responding to future ultra-high purity light emitting devices. It becomes possible. Further, by purifying the container having the residual evaporation material again, waste of the material can be eliminated. Further, the first container and the second container can be reused, and cost reduction can be realized.
[0128]
The present invention having the above configuration will be described in more detail with reference to the following embodiments.
[0129]
(Example)
[Example 1]
In this embodiment, an example in which a TFT is formed over a substrate having an insulating surface and an EL element which is a light-emitting element is formed is shown in FIGS. In this embodiment, a cross-sectional view of one TFT connected to an EL element in a pixel portion is shown.
[0130]
First, a base insulating film 201 including a stack of insulating films such as a silicon oxide film, a silicon nitride film, and a silicon oxynitride film is formed over a substrate 200 having an insulating surface. Although a two-layer structure is used here as the base insulating film 201, a single-layer film of the insulating film or a structure in which two or more layers are stacked may be used. As the first layer of the base insulating film, a plasma CVD ₄ , NH ₃ , And N ₂ A silicon oxynitride film is formed to a thickness of 10 to 200 nm (preferably 50 to 100 nm) using O as a reaction gas. Here, a 50-nm-thick silicon oxynitride film (composition ratio: Si = 32%, O = 27%, N = 24%, H = 17%) is formed. Next, as a second layer of the base insulating film, a SiH ₄ And N ₂ A silicon oxynitride film is formed to a thickness of 50 to 200 nm (preferably 100 to 150 nm) using O as a reaction gas. Here, a 100-nm-thick silicon oxynitride film (composition ratio: Si = 32%, O = 59%, N = 7%, H = 2%) is formed.
[0131]
Next, a semiconductor layer is formed over the base film. The semiconductor layer is formed by forming a semiconductor film having an amorphous structure by a known means (a sputtering method, an LPCVD method, a plasma CVD method, or the like), and then performing a crystallization treatment (a laser crystallization method, a thermal crystallization method, or A crystalline semiconductor film obtained by performing a thermal crystallization method using a catalyst such as nickel) is patterned and formed into a desired shape. This semiconductor layer is formed to have a thickness of 25 to 80 nm (preferably 30 to 60 nm). The material of the crystalline semiconductor film is not limited, but is preferably formed using silicon or a silicon-germanium alloy.
[0132]
When a crystalline semiconductor film is formed by a laser crystallization method, a pulse oscillation type or continuous emission type excimer laser, a YAG laser, a YVO laser, or the like is used. ₄ Lasers can be used. In the case of using these lasers, a method in which laser light emitted from a laser oscillator is linearly condensed by an optical system and irradiated to a semiconductor film is preferably used. The crystallization conditions are appropriately selected by the practitioner. When an excimer laser is used, the pulse oscillation frequency is 30 Hz, and the laser energy density is 100 to 400 mJ / cm. ² (Typically 200 to 300 mJ / cm ² ). When a YAG laser is used, its second harmonic is used, the pulse oscillation frequency is set to 1 to 10 kHz, and the laser energy density is set to 300 to 600 mJ / cm. ² (Typically 350-500 mJ / cm ² ). Then, laser light condensed linearly with a width of 100 to 1000 μm, for example, 400 μm, is irradiated over the entire surface of the substrate, and the superposition rate (overlap rate) of the linear laser light at this time is set to 50 to 98%. Good.
[0133]
Next, the surface of the semiconductor layer is washed with an etchant containing hydrofluoric acid to form a gate insulating film 202 covering the semiconductor layer. The gate insulating film 202 is formed using a plasma CVD method or a sputtering method with a thickness of 40 to 150 nm and containing silicon. In this embodiment, a silicon oxynitride film (composition ratio: Si = 32%, O = 59%, N = 7%, H = 2%) is formed with a thickness of 115 nm by a plasma CVD method. Needless to say, the gate insulating film is not limited to the silicon oxynitride film, and another insulating film containing silicon may be used as a single layer or a stacked structure.
[0134]
Next, after cleaning the surface of the gate insulating film 202, a gate electrode 210 is formed.
[0135]
Next, a source region 211 and a drain region 212 are formed by appropriately adding an impurity element (B or the like) which imparts p-type to the semiconductor, here, boron. After the addition, heat treatment, intense light irradiation, or laser light irradiation is performed to activate the impurity elements. In addition, plasma damage to the gate insulating film and plasma damage to the interface between the gate insulating film and the semiconductor layer can be recovered simultaneously with the activation. In particular, in an atmosphere at room temperature to 300 ° C., an impurity element is activated from the front surface or the back surface using an excimer laser. The second harmonic of the YAG laser may be irradiated to activate the laser. The YAG laser is a preferable activation means because it requires less maintenance.
[0136]
In the subsequent steps, after performing hydrogenation, an insulator 213a made of an organic material or an inorganic material (for example, made of a photosensitive organic resin) is formed, and thereafter, an aluminum nitride film, AlN _X O _Y A first protective film 213b made of an aluminum nitride oxide film or a silicon nitride film is formed. In addition, AlN _X O _Y May be formed by introducing oxygen, nitrogen, or a rare gas from the gas introduction system by an RF sputtering method using a target made of AlN or Al. AlN _X O _Y It is sufficient that nitrogen is contained in the layer represented by at least several atm%, preferably 2.5 atm% to 47.5 atm%, and oxygen is 47.5 atm% or less, preferably 0.01 to less than 20 atm%. I just need. Next, a contact hole reaching the source region or the drain region is formed. Next, a source electrode (wiring) 215 and a drain electrode 214 are formed to complete a TFT (p-channel TFT). This TFT is a TFT that controls a current supplied to an OLED (Organic Light Emitting Device).
[0137]
Further, the present invention is not limited to the TFT structure of this embodiment, and if necessary, a lightly doped drain (LDD) structure having an LDD region between a channel formation region and a drain region (or a source region) may be used. . In this structure, a region to which an impurity element is added at a low concentration is provided between a channel formation region and a source or drain region formed by adding an impurity element at a high concentration. This region is referred to as an LDD region. Calling. Further, a so-called GOLD (Gate-drain Overlapped LDD) structure in which an LDD region is overlapped with a gate electrode with a gate insulating film interposed therebetween may be used. Note that the gate electrode is preferably formed to have a stacked structure, and the upper gate electrode and the lower gate electrode are etched so as to have different taper angles, and an LDD structure or a GOLD structure is formed by self-alignment using the gate electrode as a mask.
[0138]
In this embodiment, a p-channel TFT has been described. However, it is needless to say that an n-channel TFT can be formed by using an n-type impurity element (P, As, etc.) instead of the p-type impurity element. No.
[0139]
In this embodiment, the top gate type TFT is described as an example. However, the present invention can be applied regardless of the TFT structure. For example, the present invention is applied to a bottom gate type (reverse stagger type) TFT and a forward stagger type TFT. It is possible to
[0140]
Next, in the pixel portion, a first electrode 217 in contact with a connection electrode in contact with the drain region is arranged in a matrix. This first electrode 217 serves as an anode or a cathode of the light emitting element. Next, an insulator (referred to as a bank, a partition, a barrier, a bank, or the like) 216 covering an end portion of the first electrode 217 is formed.
[0141]
As the insulator 216, a photosensitive organic resin is used. For example, when a negative photosensitive acrylic is used as the material of the insulator 216, the insulator 216 has a curved surface having a first radius of curvature at an upper end thereof, and a second radius of curvature at a lower end of the insulator 216. It is preferable that the first radius of curvature and the second radius of curvature be 0.2 μm to 3 μm. Next, a layer 218 containing an organic compound is formed in the pixel portion, and a second electrode 219 is formed thereover to complete an EL element. This second electrode 219 serves as a cathode or an anode of the EL element.
[0142]
Alternatively, the insulator 216 covering the end of the first electrode 217 may be covered with a second protective film formed using an aluminum nitride film, an aluminum nitride oxide film, or a silicon nitride film.
[0143]
For example, an example in which positive photosensitive acrylic is used as a material of the insulator 216 is illustrated in FIG. Only the upper end of the insulator 316a using positive photosensitive acrylic has a curved surface having a radius of curvature, and the insulator 316a is further formed of an aluminum nitride film, an aluminum nitride oxide film, or a silicon nitride film. Cover with a second protective film 316b.
[0144]
Next, when the first electrode 217 is used as an anode, as a material of the first electrode 217, a metal (Pt, Cr, W, Ni, Zn, Sn, In) having a large work function is used, and an end is insulated. After covering with an object (referred to as a bank, a partition, a barrier, a bank, etc.) 216 or 316, the insulator 216 or the insulator 216 is formed using the evaporation apparatus including the evaporation source holder and the film formation chamber described in Embodiments 1 to 3. The evaporation is performed while moving the evaporation source in accordance with 316. For example, if the degree of vacuum is 5 × 10 ^-3 Torr (0.665 Pa) or less, preferably 10 ^-4 -10 ^-6 Vapor deposition is performed in a film formation chamber evacuated to Pa. At the time of vapor deposition, the organic compound is vaporized in advance by resistance heating, and scatters in the direction of the substrate when the shutter is opened at the time of vapor deposition. The vaporized organic compound scatters upward, is deposited on the substrate through an opening provided in the metal mask, and includes a light emitting layer (including a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer). ) Is formed.
[0145]
In the case where a layer containing an organic compound exhibiting white color is formed as a whole of a light-emitting element by an evaporation method, the light-emitting element can be formed by stacking light-emitting layers. For example, Alq ₃ , Alq partially doped with a red light-emitting dye Nile Red ₃ , P-EtTAZ, and TPD (aromatic diamine) are sequentially laminated to obtain white.
[0146]
In the case of using the evaporation method, as described in Embodiment Mode 3, a container (typically, a crucible) in which an EL material which is an evaporation material is stored in advance by a material maker is provided in the film formation chamber. Is preferred. It is preferable that the crucible is installed without being exposed to the atmosphere, and the crucible is preferably introduced into the film formation chamber while being sealed in the second container. Desirably, a chamber (installation chamber) having vacuum evacuation means connected to the film formation chamber is provided, where the crucible is taken out of the second container under vacuum or an inert gas atmosphere, and the crucible is installed in the film formation chamber. . By doing so, the crucible and the EL material stored in the crucible can be prevented from being contaminated.
[0147]
Next, a second electrode 219 is formed as a cathode over the light-emitting layer. The second electrode 219 includes a thin film containing a metal (Li, Mg, Cs) having a small work function and a transparent conductive film (ITO (indium oxide tin oxide alloy), indium zinc oxide alloy (In ₂ O ₃ -ZnO), zinc oxide (ZnO) or the like. Further, an auxiliary electrode may be provided over the insulator 216 in order to reduce the resistance of the cathode. The light-emitting element thus obtained emits white light. Note that an example in which the layer 218 containing an organic compound is formed by an evaporation method is described here; however, there is no particular limitation, and an application method (a spin coating method, an inkjet method, or the like) may be used.
[0148]
Further, in this embodiment, an example in which a layer made of a low molecular material is stacked as the organic compound layer is described; however, a layer made of a high molecular material and a layer made of a low molecular material may be stacked.
[0149]
Note that an active matrix light emitting device having a TFT may have two types of structures in the light emission direction. One is a structure in which light emitted from the light-emitting element passes through the second electrode and enters the eyes of an observer. In this case, light emitted from the light-emitting element passes through the second electrode and enters the eyes of an observer, and can be manufactured using the above-described steps.
[0150]
In another structure, light emitted from the light-emitting element passes through the first electrode and the substrate and enters the eyes of an observer. In the case where light emitted from the light-emitting element passes through the first electrode and enters a viewer's eyes, it is preferable that the first electrode 217 be formed using a light-transmitting material. For example, when the first electrode 217 is used as an anode, a transparent conductive film (ITO (indium tin oxide alloy), indium zinc oxide alloy (In ₂ O ₃ -ZnO), zinc oxide (ZnO), or the like, the end of which is covered with an insulator (referred to as a bank, a partition, a barrier, a bank, etc.) 216, and a layer 218 containing an organic compound is formed. Metal film (MgAg, MgIn, AlLi, CaF ₂ , CaN, or an alloy, or a film formed by co-evaporation of aluminum and an element belonging to Group 1 or 2 of the periodic table) may be used as a cathode. The cathode may be formed selectively by using a resistance heating method by vapor deposition and by using a vapor deposition mask.
[0151]
After the steps up to the formation of the second electrode 219 in the above steps, a sealing substrate is attached with a sealant to seal the light-emitting element formed over the substrate 200.
[0152]
Here, an external view of the entire active matrix light-emitting device is described with reference to FIGS. Note that FIG. 18A is a top view illustrating the light-emitting device, and FIG. 18B is a cross-sectional view of FIG. 18A cut along AA ′. A source signal line driver circuit 1101, a path, a pixel portion 1102, and a gate signal line driver circuit 1103 are provided over a substrate 1110. Further, the inside surrounded by the sealing substrate 1104, the sealant 1105, and the substrate 1110 is a space 1107.
[0153]
Note that a wiring 1108 for transmitting a signal input to the source signal line driver circuit 1101 and the gate signal line driver circuit 1103 receives a video signal or a clock signal from an FPC (flexible printed circuit) 1109 serving as an external input terminal. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC. The light-emitting device in this specification includes not only the light-emitting device body but also a state in which an FPC or a PWB is attached thereto.
[0154]
Next, a cross-sectional structure is described with reference to FIG. A driver circuit and a pixel portion are formed over a substrate 1110; here, a source signal line driver circuit 1101 and a pixel portion 1102 are illustrated as the driver circuits.
[0155]
Note that as the source signal line driver circuit 1101, a CMOS circuit in which an n-channel TFT 1123 and a p-channel TFT 924 are combined is formed. Further, the TFT forming the driver circuit may be formed using a CMOS circuit, a PMOS circuit, or an NMOS circuit. Further, in this embodiment, a driver integrated type in which a drive circuit is formed on a substrate is shown; however, this is not always necessary, and the driver circuit can be formed outside instead of on the substrate.
[0156]
The pixel portion 1102 is formed by a plurality of pixels including a switching TFT 1111, a current control TFT 1112, and a first electrode (anode) 1113 electrically connected to a drain thereof.
[0157]
Further, an insulating film 1114 is formed at both ends of the first electrode (anode) 1113, and a layer 1115 containing an organic compound is formed over the first electrode (anode) 1113. The layer 1115 containing an organic compound is formed using the evaporation apparatus described in Embodiments 1 and 2 by moving an evaporation source holder in accordance with the insulating film 1114. Further, a second electrode (cathode) 1116 is formed over the layer 1115 containing an organic compound. Thus, a light-emitting element 1118 including the first electrode (anode) 1112, the layer 1115 containing an organic compound, and the second electrode (cathode) 1116 is formed. Here, since the light-emitting element 1118 is an example of emitting white light, a color filter including a color conversion layer 1131 and a light-blocking layer (BM) 1132 (an overcoat layer is not illustrated here for simplicity) is provided.
[0158]
Note that FIGS. 19A and 19B illustrate a structure in which light emitted from the light-emitting element passes through the second electrode and enters the eyes of an observer; therefore, the color filter is provided on the sealing substrate side 1104. However, in a structure in which light emitted from the light-emitting element passes through the first electrode and enters the eyes of an observer, the color filter may be provided on the substrate 1110 side.
[0159]
The second electrode (cathode) 1116 also functions as a wiring common to all pixels, and is electrically connected to the FPC 1109 via the connection wiring 1108. In addition, a third electrode (auxiliary electrode) 1117 is formed over the insulating film 1114, so that the resistance of the second electrode is reduced.
[0160]
In addition, a sealing substrate 1104 is attached with a sealant 1105 in order to seal the light-emitting element 1118 formed over the substrate 1110. Note that a spacer made of a resin film may be provided in order to secure an interval between the sealing substrate 1104 and the light-emitting element 1118. The space 1107 inside the sealant 1105 is filled with an inert gas such as nitrogen. Note that an epoxy resin is preferably used as the sealant 1105. It is preferable that the sealant 1105 is a material that does not transmit moisture and oxygen as much as possible. Further, a substance having an effect of absorbing oxygen or water may be contained in the space 1107.
[0161]
In this embodiment, a plastic substrate made of FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), mylar, polyester, acrylic, or the like is used as a material of the sealing substrate 1104 in addition to a glass substrate or a quartz substrate. be able to. After the sealing substrate 1104 is bonded with the sealing agent 1105, the sealing substrate 1104 can be further sealed with a sealing agent so as to cover a side surface (exposed surface).
[0162]
By enclosing the light-emitting element as described above, the light-emitting element can be completely shut off from the outside, and a substance such as moisture or oxygen that promotes the deterioration of the organic compound layer can be prevented from entering from the outside. Therefore, a highly reliable light-emitting device can be obtained.
[0163]
This embodiment can be freely combined with any one of Embodiment Modes 1 to 4.
[0164]
(Example 1)
Examples of electronic devices using the light emitting device of the present invention include a video camera, a digital camera, a goggle type display (head mounted display), a navigation system, a sound reproducing device (car audio, audio component, etc.), a notebook personal computer, a game device, A portable information terminal (a mobile computer, a mobile phone, a portable game machine, an electronic book, or the like), an image reproducing apparatus provided with a recording medium (specifically, a recording medium such as a Digital Versatile Disc (DVD)) is reproduced, and the image is reproduced. Device having a display capable of displaying). In particular, it is desirable to use a light emitting device for a portable information terminal in which the screen is often viewed from an oblique direction, since the wide viewing angle is regarded as important. FIG. 20 shows specific examples of these electronic devices.
[0165]
FIG. 20A illustrates a light-emitting device, which includes a housing 2001, a support base 2002, a display portion 2003, a speaker portion 2004, a video input terminal 2005, and the like. The light emitting device of the present invention can be used for the display portion 2003. According to the invention, the light-emitting device shown in FIG. 20A is completed. Since the light-emitting device is a self-luminous type, it does not require a backlight and can be a display portion thinner than a liquid crystal display. Note that the light-emitting devices include all information-display light-emitting devices for personal computers, TV broadcast reception, advertisement display, and the like.
[0166]
FIG. 20B illustrates a digital still camera, which includes a main body 2101, a display portion 2102, an image receiving portion 2103, operation keys 2104, an external connection port 2105, a shutter 2106, and the like. The light-emitting device of the present invention can be used for the display portion 2102. According to the present invention, a digital still camera shown in FIG. 20B is completed.
[0167]
FIG. 20C illustrates a laptop personal computer, which includes a main body 2201, a housing 2202, a display portion 2203, a keyboard 2204, an external connection port 2205, a pointing mouse 2206, and the like. The light emitting device of the present invention can be used for the display portion 2203. According to the present invention, the light emitting device shown in FIG. 20C is completed.
[0168]
FIG. 20D illustrates a mobile computer, which includes a main body 2301, a display portion 2302, a switch 2303, operation keys 2304, an infrared port 2305, and the like. The light emitting device of the present invention can be used for the display portion 2302. According to the present invention, the mobile computer shown in FIG. 20D is completed.
[0169]
FIG. 20E illustrates a portable image reproducing device (specifically, a DVD reproducing device) including a recording medium, which includes a main body 2401, a housing 2402, a display portion A 2403, a display portion B 2404, and a recording medium (such as a DVD). A reading unit 2405, operation keys 2406, a speaker unit 2407, and the like are included. The display portion A 2403 mainly displays image information, and the display portion B 2404 mainly displays character information. The light-emitting device of the present invention can be used for these display portions A, B 2403, and 2404. Note that the image reproducing device provided with the recording medium includes a home game machine and the like. According to the present invention, the DVD reproducing device shown in FIG. 20E is completed.
[0170]
FIG. 20F illustrates a goggle-type display (head-mounted display), which includes a main body 2501, a display portion 2502, and an arm portion 2503. The light-emitting device of the present invention can be used for the display portion 2502. According to the present invention, the goggle type display shown in FIG. 20F is completed.
[0171]
FIG. 20G illustrates a video camera, which includes a main body 2601, a display portion 2602, a housing 2603, an external connection port 2604, a remote control receiving portion 2605, an image receiving portion 2606, a battery 2607, a voice input portion 2608, operation keys 2609, and the like. . The light emitting device of the present invention can be used for the display portion 2602. According to the present invention, the video camera shown in FIG. 20G is completed.
[0172]
Here, FIG. 20H illustrates a mobile phone, which includes a main body 2701, a housing 2702, a display portion 2703, a sound input portion 2704, a sound output portion 2705, operation keys 2706, an external connection port 2707, an antenna 2708, and the like. The light-emitting device of the present invention can be used for the display portion 2703. Note that the display portion 2703 displays white characters on a black background, so that current consumption of the mobile phone can be suppressed. Further, according to the present invention, the mobile phone shown in FIG. 20H is completed.
[0173]
If the light emission luminance of the light emitting material is increased in the future, the light including the output image information can be enlarged and projected by a lens or the like and used for a front type or rear type projector.
[0174]
Further, the electronic devices often display information distributed through electronic communication lines such as the Internet and CATV (cable television), and in particular, opportunities to display moving image information are increasing. Since the response speed of the light-emitting material is extremely high, the light-emitting device is preferable for displaying moving images.
[0175]
【The invention's effect】
According to the present invention, it is possible to provide a manufacturing apparatus in which a plurality of film forming chambers for performing a vapor deposition process are continuously arranged. As described above, since the film formation processing is performed in a plurality of film formation chambers almost in parallel, the throughput of the light emitting device can be improved, and the processing time per substrate can be shortened.
[0176]
Further, according to the present invention, one or several film forming chambers can be maintained without temporarily stopping the production line, although the number of processed wafers is slightly reduced.
[Brief description of the drawings]
FIG. 1 is a diagram showing an example of a manufacturing apparatus of the present invention. (Embodiment 1)
FIG. 2 is a diagram showing an example of a sequence. (Embodiment 1)
FIG. 3 is an example of a substrate transfer path. (Embodiment 1)
FIG. 4 is a diagram showing an example of a sequence. (Embodiment 1)
FIG. 5 is an example of a substrate transfer path. (Embodiment 1)
FIG. 6 is a diagram showing an example of a sequence. (Embodiment 1)
FIG. 7 is an example of a transfer path for two substrates. (Embodiment 1)
FIG. 8 is a view showing a vapor deposition apparatus of the present invention. (Embodiment 2)
FIG. 9 is a view showing a vapor deposition apparatus of the present invention. (Embodiment 2)
FIG. 10 shows a container of the present invention. (Embodiment 3)
FIG. 11 shows a container of the present invention. (Embodiment 3)
FIG. 12 is a view showing an evaporation source holder of the present invention. (Embodiment 3)
FIG. 13 is a view showing a manufacturing system of the present invention. (Embodiment 4)
FIG. 14 is a view showing a transport container of the present invention. (Embodiment 4)
FIG. 15 is a diagram showing a vapor deposition apparatus of the present invention. (Embodiment 4)
FIG. 16 is a view showing a vapor deposition apparatus of the present invention. (Embodiment 4)
FIG. 17 illustrates a light-emitting device of the present invention. (Example 1)
FIG. 18 illustrates a light-emitting device of the present invention. (Example 1)
FIG. 19 illustrates a light-emitting device of the present invention. (Example 1)
FIG. 20 illustrates an example of an electronic device using the present invention.
FIG. 21 is a diagram showing an example of a manufacturing apparatus of the present invention. (Embodiment 1)
FIG. 22 is a diagram showing a conventional evaporation apparatus.

Claims (5)

A manufacturing apparatus having a load chamber, a transfer chamber connected to the load chamber, and a plurality of film formation chambers connected to the transfer chamber,
The plurality of film formation chambers are connected to a vacuum exhaust processing chamber that evacuates the film formation chamber, and includes an alignment unit that aligns a mask and a substrate, a deposition source, and a unit that heats the deposition source. And
A manufacturing apparatus, wherein at least two of the plurality of film forming chambers perform vapor deposition on a substrate carried into each of the film forming chambers in parallel. A manufacturing apparatus having a load chamber, a transfer chamber connected to the load chamber, and a plurality of film formation chambers connected to the transfer chamber, and a sealing chamber,
The plurality of film formation chambers are connected to a vacuum exhaust processing chamber that evacuates the film formation chamber, and includes an alignment unit that aligns a mask and a substrate, a deposition source, and a unit that heats the deposition source. And
In at least two of the plurality of film forming chambers, vapor deposition is performed on a substrate carried into each of the film forming chambers in parallel,
A manufacturing apparatus, wherein a plurality of the sealing chambers are provided, and the substrate is distributed to one of the plurality of sealing chambers and sealed. A manufacturing apparatus having a load chamber, a transfer chamber connected to the load chamber, and a plurality of film formation chambers connected to the transfer chamber,
The plurality of film formation chambers are connected to a vacuum exhaust processing chamber that evacuates the film formation chamber, and includes an alignment unit that aligns a mask and a substrate, a deposition source, and a unit that heats the deposition source. And
In at least two of the plurality of film forming chambers, vapor deposition is performed on a substrate carried into each of the film forming chambers in parallel, and in at least one of the plurality of film forming chambers, cleaning of the film forming chamber is performed. Is carried out. 4. The manufacturing apparatus according to claim 1, wherein in at least two of the plurality of film forming chambers, layers containing the same organic compound are vapor-deposited in parallel. 5. . A manufacturing apparatus having a load chamber, a transfer chamber connected to the load chamber, and a plurality of film formation chambers connected to the transfer chamber,
The plurality of film formation chambers are connected to a vacuum exhaust processing chamber that evacuates the film formation chamber, and includes an alignment unit that aligns a mask and a substrate, a deposition source, and a unit that heats the deposition source. And
The plurality of substrates carried into the load chamber are distributed to and carried into one of the plurality of film formation chambers in the transfer chamber, and each substrate has one of the same number of different paths as the number of the film formation chambers. A manufacturing apparatus characterized by being processed in a single process.

Images