201104008 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種用於沉積薄膜之裝置及方法，更具體而言， 係關於一種用於沉積一薄膜於一基板之裝置及方法、以及一種用 於沉積一薄膜之系統，其中用於沉積薄膜之裝置係以直列類型 (in-line type)連接。 【先前技術】 不同於液晶顯示器（Liquid Crystal Display ; LCD )’有機發光二 極體（Organic Light Emitted Diode ; OLED)具有自發光特性，因 而不需要背光燈且其功率消耗較小。此外，由於具有寬廣之視角 以及快速之響應時間（response time )，使用0LED之顯示器件可 顯示高品質之影像而不存在視角及殘影（afterimage )方面之問題。 此一 OLED係藉由堆疊複數薄膜（例如有機薄膜及金屬薄膜） 於一玻璃基板上而製成。因此，以往主要採用其中於一圓形傳送 腔室周圍連接用於執行一系列單元製程之複數單元腔室之群簇類 型（cluster type )，該群簇類型係用以於玻璃基板在各別腔室之間 設置成一水平狀態時執行基板傳送及器件製程。此一群簇類型具 有可快速且連續執行一系列製程之優點，且亦具有可更換一沉積 遮罩（deposition mask)之優點，而此對於製造OLED而言甚為重 要。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and method for depositing a thin film, and more particularly to an apparatus and method for depositing a film on a substrate, and a A system for depositing a film wherein the means for depositing the film are joined in an in-line type. [Prior Art] Unlike a liquid crystal display (LCD)' Organic Light Emitted Diode (OLED), which has self-luminous characteristics, a backlight is not required and its power consumption is small. In addition, thanks to its wide viewing angle and fast response time, OLED display devices can display high quality images without problems with viewing angles and afterimages. The OLED is made by stacking a plurality of films (for example, an organic film and a metal film) on a glass substrate. Therefore, in the past, a cluster type in which a plurality of unit chambers for performing a series of unit processes are connected around a circular transfer chamber is mainly used, and the cluster type is used for each of the glass substrates in the respective chambers. Substrate transfer and device processing are performed when the chambers are placed in a horizontal state. This cluster type has the advantage of being able to perform a series of processes quickly and continuously, and also has the advantage of being able to replace a deposition mask, which is of great importance for the manufacture of OLEDs.
另一方面，近來所謂之三原色獨立畫素型（three primary colors independent pixel type) OLED備受關注，三原色獨立畫素型〇lED 係利用一精密金屬遮罩（Fine Metal Mask ; FMM )依序形成藍色 4 201104008 (B)、綠色（G)及紅色（R)發光層於—大面積基板上。已知此 一三原色獨立畫素類型具有較佳之色純度及發光效_，且具有確 保價格具有競爭力之優點。 然而’對於二原色獨立畫素類型，因藍色綠色（G)及紅 色（R)發光層應於各別之獨立製程腔室中依序形成，故其中用於 執行各別單元製程之複數製程腔室串列連接之直列類型即足以滿 足要求。因此，需要將傳統之群簇類型轉變成直列類型。然而， 相較於群族類型，直列類型存在以下問題：由於存在許多重疊之 。又備，生產線之建造成本較高，並且由於製程時間長而使生產率 較低。 對於先别技術之群簇類型，由於一基板係水平設置以執行一薄 膜製％ (有機薄膜沉積製程），嚴重之基板脊曲現象會使器件之製 這非吊困難。此外，因用於大面積基板之沉積遮罩所具有之重量 大於數百公斤，故基板彎曲現象可能會加劇而造成諸如基板折斷 等嚴重問題。 【發明内容】 [技術問題] 本發明提供一種用於沉積一薄膜之裝置、方法及系統，其可藉 由同時處理複數基板並使製程等待時間（例如用於設置/對齊基板 及/儿積遮罩之時間）最小化而達成高之生產率。 本發明亦提供一種用於沉積一薄膜之裝置、方法及系統，其可 藉由使一通常可用設備之共用性最大化而降低生產線之建造成 201104008 本。 本發明亦提供一種用於沉積一薄膜之裝置、方法及系統，其可 藉由將一基板設置於一垂直狀態以對基板執行一薄膜製程而克服 基板彎曲之現象。 [技術解決方案] 根據一實例性實施例，提供一種用於沉積一薄膜之裝置，包含： 一腔室，用以提供一反應空間；一第一基板支架及一第二基板支 架，彼此間隔開並安裝於該腔室中；以及一沉積源，安裝於該第 一基板支架與該第二基板支架之間，且用以於該第一基板支架與 該第二基板支架之方向依序供應一沉積原料。 該第一基板支架與該第二基板支架可用以支撐一基板於一垂直 狀態。 該第一基板支架與該第二基板支架可包含：一平台，用以支撐 該基板；以及一夾具，用以夾持穩定地置於該平台上之該基板。 該第一基板支架與該第二基板支架可更包含一驅動單元，該驅 動單元用以使該平台站立於一垂直狀態或使該平台平躺於一水平 狀態。 該沉積源係可於該第一基板支架與該第二基板支架之間旋轉。 該沉積源可係為一點式沉積源、一直線式沉積源及一平面式沉 積源其中之一。 該腔室可連接至一遮罩腔室（mask chamber )，該遮罩腔室係用 6 201104008 以各提供-沉積遮罩至該第 更換該沉積遮罩。 支架與该第二基板支架或用以 根據另一實例性實施例，提供—種沉積一薄膜之方法’包含： 為串列連接之複數腔室其令之每_者# r 、a⑵ 母者6又置一第—製程線（pr_s )及一第二製程線;裝載-第-基板，該第-基板沿該第一製 程線傳送人該等腔室其.中之—指定腔室，以執行n元製 :;裝載-第二基板’該第二基板沿該第二製程線傳送入該等腔 至其令之《定腔室，以於執行該第—基板之該單元製程時執 行-第二單元製程所需之—預先準備；以及當該第—單元製程完 成時，對已完成該預先準備之該第二基板執行該第二單元製程。 該第一單元製程可包含利用該沉積源於該第—基板之一方向供 應原料且遠第一單χ製程可包含藉由旋轉該沉積源而於該第 二基板之一方向供應該原料。 可藉由蒸發及供應一有機原料而執行該第一單元製程及該第二 單元製程。 上述方法可更包含：在執行該第二基板之該單元製程時，自該 指定腔室卸載該第一基板。 該第一基板與該第二基板可以一水平狀態置放及傳送。 戎第一基板與該第二基板可以一垂直狀態置放及傳送。 該第一基板與該第二基板可被置放於一垂直狀態，以執行該等 單元製程。 該預先準備可包含以下至少其中之-：使該第二基板對齊於一 201104008 預疋位置，以及將一沉積遮罩安排及對齊於該第二基板上。 根據再-實例性實施例，提供—種用於沉積一薄膜之系統，包 含：串列連接之複數腔室；以及一第一製程線及一第二製程線， 形成於該等腔室中，其中該等腔室至少其中之一中可設置有：一 第-基板支架，包含於該第一製程線中；一第二基板支架，包含 於該第二製程線中並與該第—基板支架_開：以及—沉積源， 安裝於該第-基板支架與該第二基板支架之間並用以供應—沉積 原料。 / 該沉積源可於該第-基板支架與該第二基板支架之間旋轉。 忒/儿積源可係為一點式沉積源、一直線式沉積源與一平面式沉 積源其中之一。 該等腔室可包含：複數製程腔室，用以執行一單元製程；以及 複數緩衝腔室，連接於該等製程腔室之間。 該等製程腔室可連接至一遮罩腔室，該遮罩腔室用以供應一沉 積遮罩或更換該沉積遮罩。 [有利效果] <根據本發明，因可透過設置於各該製程腔室中之單個沉積源對 設置於各該製程腔室中之二或更多條製程線執行依序薄膜製程， 故可節約製造成本、同時可提高生產率。 另外，於在一條製程線上對一基板執行一薄膜製程之同時，可 於另製程線上對另一基板執行基板傳送及基板/遮罩對魯|、 待時間，進而更提高生產率。 8 201104008 此外，因於傳送一基板時該基板係設置於一水平狀態，故於傳 送基板時基板折斷之機率降低，且因在薄膜製程期間基板係設置 於-垂直狀態’故基板彎曲之現象較少出現，此使器件之製造易 於進行。 【實施方式】 以下，將參照附圖詳細說明本發明之具體實施例。然而，本發 月可實％為不同之形式，而不應被視為僅限於本文所述之實施 例。而疋，忒等實施例旨在使本揭露内容透徹且完整，並將向熟 習此項技術者全面傳達本發明之範圍，通篇中相同之參考編號用 以指代相同之元件。 第1圖係為根據-實例性實施例之一薄膜沉積系統，第2圖係 為L 3於第1圖所示;^膜沉積系統中之複數腔室中任—者之平面 圖。 參見第1圖及第2圖’該薄膜沉積系統包含：一裝載腔室no, 位於-前端；—卸載腔室12G，位於—後端；以及複數單元腔室 200、600，以一直列方式（in丨ine manner)排列於裝載腔室 與卸載腔室120之間。此時，該等單元腔室2〇〇、6〇〇係於一列方 向上沿二製程線PL1及pu排列。當於第—製程線pLi上執行一 單元製私時，執行第二製程線pL2之—預先準備，俾於完成第一 製程線PL1之單元製雜，可繼續執行第三製程線之-單元製程。 裝載腔至110係用以於一大氣麼力狀態下接收已經歷—預定先 前製程之-基板G ’並於—真空狀態下裝載該基板G至―製程腔 至21 〇内。卸載腔室！ 2〇係用以自一製程腔室接收已經歷一 201104008 系列單元製程之基板G，並卸載該基板G至處於大氣壓力狀態之 -空間。因此，裝載室11G及卸載室12()係用以自大氣壓力狀態 轉變成真空狀態或者反之。此外，儘管圖中未示出，然裝載室11〇 及卸載室120可連接至一基板傳送裝置（例如一機械手臂（r〇b〇t arm))以及一基板載送單元（例如一傳送盒（cassette))。 該等單元腔室200、600包含複數製程腔室2丨〇、22〇、23〇、24〇、 250、260 ( 200 )以及連接於§玄專製程腔室21〇、220、230、240、 250、260 ( 200 )間之複數緩衝腔室61〇、620 ( 600 )。緩衝腔室 600提供一任意空間，基板G停留於該空間中一段時間以等待進 行一製程。此外，用以提供一第一遮罩M1至第一製程線PL1之 一第一遮罩腔室310連接至排列於該第—製程線pL1上之各該製 程腔室200，且用以提供一第二遮罩M2至第二製程線PL2之一第 二遮罩腔室320連接至排列於該第二製程線PL2上之各該製程腔 室200。用於一薄膜沉積製程或用於更換之沉積遮罩μ 1、M2係 儲存於第一遮罩腔室310及第二遮罩腔室320中。當然，因第一 遮罩腔室310及第二遮罩腔室320可共用，可僅連接單個共用遮 罩腔室至各該製程腔室200。此外’一用於供應一原料至一沉積源 540之原料饋送器410可連接至該等各別單元腔室其中之某些。 該等製程腔室200係用以於基板G上執行一系列單元製程。舉 例而言，一實例性實施例係用以形成一 OLED，該OLED包含依 序形成於基板G上之一電洞注入層（hole injection layer ; HIL)、 一電洞傳輸層（hole transport layer; HTL)、一發射材料層（emitting material layer ; EML)、一電子傳輸層（electron transport layer ; 10 201104008 ETL)以及一電子注入層（electron injection layer ; EIL)，一陽極 形成於基板G上。為此，HIL形成腔室210、HTL形成腔室220、 EML形成腔室230、ETL形成腔室240、EIL形成腔室250以及陰 極形成腔室260係串列連接。此時，EML形成腔室230可更包含 一藍色（B ) EML形成腔室23 1、一綠色（G ) EML形成腔室232 以及一紅色（R) EML形成腔室233以顯示自然之顏色，且陰極 形成腔室260可更包含複數陰極形成腔室261、262、263以形成 一多層結構形式之陰極。 該等製程腔室其中之一係製作成一矩形盒形狀，以提供一可處 理基板G之反應空間。此外，各製程腔室200具有沿第一製程線 PL1定位之一第一基板入口 511a、一第一基板支架520以及一第 一基板出口 512a，並具有沿第二製程線PL2定位之一第二基板入 口 511b、一第二基板支架530以及一第二基板出口 512b。第一基 板入口 511a與第二基板入口 511b係相互間隔地形成於製程腔室 200之一側壁，而第一基板出口 512a與第二基板出口 512b係相互 間隔地形成於製程腔室200之另一側壁。基板入口 511a、511b與 基板出口 512a、512b可由狹口閥（slit valve)構成。 各該基板支架520、530包含：一平台，用以支撐基板G1或G2 之一背面；一夾具522，安裝於平台521中，用以夾持基板G1或 G2 ;以及一驅動器（圖未示），用以使平台521站立於一垂直狀態 或平躺於一水平狀態。不同於該實例性實施例，倘若基板Gl、G2 裝載於各該製程室210、220、230、240、250、260中，則可省卻 該驅動器。 11 201104008 在平台521内部或之下，可設置一溫度控制裝置523，俾使置於 平台521上之基板Gl、G2可保持於一適於執行一製程之溫度。 溫度控制裝置523可由以下至少其中之一構成：一加熱裝置，用 於加熱基板Gl、G2 ; —冷卻裝置，用於冷卻基板Gl、G2 ;以及 其一組合。本實例性實施例藉由利用一冷卻裝置使基板Gl、G2 之溫度保持於一製程溫度而增強基板Gl、G2與沉積於基板G1、 G2上之一沉積材料層間之反應性。 在置於平台521上之基板Gl、G2之狀態自水平狀態轉變成垂 直狀態或自垂直狀態轉變成水平狀態時，夾具522夾持基板G1、 G2之邊緣，以防止基板Gl、G2移動。在本實例性實施例之情形 中，為控制形成於基板Gl、G2上之一薄膜圖案，於基板G1及 G2上分別設置各具有一預定沉積圖案之沉積遮罩Ml及M2。因 此，較佳係使夾具522用以將基板Gl、G2與沉積遮罩Ml、M2 二者夾持於平台521上。 第一基板支架520與第二基板支架530於同一水平面上彼此間 隔一預定距離。此處，該預定距離可等於或大於一如下距離：當 第一基板支架520與第二基板支架530其中之一自垂直狀態旋轉 至水平狀態或自水平狀態旋轉至垂直狀態時，另一者不受旋轉者 之影響。 沉積源540係位於彼此間隔該預定距離之第一基板支架520與 第二基板支架530之間。沉積源540係設置成面朝基板G1與G2 中被旋轉至垂直狀態以進行一沉積製程之一者，並用以沿面朝基 板G之一方向（即沿一沉積表面方向）供應一蒸發之原料。儘管 12 201104008 圖未示出，然沉積源540具有一其中容納一原料之坩堝 (crucible)、一用以蒸發該原料之加熱單元以及一用以喷射所蒸發 原料之喷射器。沉積源540根據一製程狀態可係為一點式 (point-type )沉積源、一直線式（line-type)沉積源與一平面式 (plane-type )沉積源其中之一。本實例性實施例係利用直線式沉 積源540，直線式沉積源540包含以一直線型式排列之複數點式沉 積源541、542，且直線式沉積源540在藉由一往復運動驅動構件 沿左右方向往復運動時均勻地供應（或喷射）該原料於基板G1、 G2之一整個面積上。 具體而言，根據本實例性實施例之沉積源540係配置成使沉積 源540可自第一基板支架520沿第二基板支架530之一方向或自 第二基板支架530沿第一基板支架520之一方向旋轉180度，以 喷射該原料。因此，儘管於一單個腔室中形成二列製程線，然可 利用單個沉積源540執行該二製程線之製程。 現在，將參照第1圖簡要地描述利用具有上述配置之薄膜沉積 系統實施之一薄膜沉積製程。 將具有透過一先前製程形成之陽極之基板G裝載於處於大氣狀 態之裝載室110中，然後將裝載室110之内部轉變成一真空狀態。 接著，將基板G依序裝載於製程腔室210、220、230、240、250、 260中，製程腔室210、220、230、240、250、260係沿所選之第 一製程線與第二製程線交替排列以執行一系列單元製程。換言 之，將基板G依序裝載於呈真空狀態之HIL形成腔室210、HTL 形成腔室220及EML形成腔室231、232、233中。藉此，依序形 13 201104008 成一 HIL、一 HTL及一 EML於基板G之陽極上。此後，依序裝 載所得之基板G至ETL形成腔室240、EIL形成腔室250以及陰 極形成腔室261、262、263中。藉此，形成一 ETL、一 EIL以及 一多層式陰極於基板G之EML上，進而製成一 OLED。接著，將 基板G傳送至卸載腔室120並隨後卸載至呈大氣狀態之外部。 同時，於薄膜沉積製程中’基板G可以垂直狀態或水平狀態傳 送。然而，倘若以水平狀態執行基板G之傳送’則需要一在各該 製程腔室210、220、230、240、250、260内將基板自水平狀態轉 變成垂直狀態之過程。以下，將參照第3圖至第8圖更詳細地描 述一將基板自水平狀態轉變成垂直狀態以執行一單元製程之過 程。第3圖至第8圖係為根據一實例性實施例，薄膜沉積系統之 單元製程之平面圖。 參見第3圖，將沿第一製程線以水平狀態傳送之第一基板G1透 過第一基板入口 511a裝載入製程腔室200内’並將所裝載之第一 基板G1置於以水平狀態設置之第一基板支架520之平台上。接 著，將第一沉積遮罩Ml (參見第4圖）自連接至製程腔室200之 第一遮罩腔室310裝載入製程腔室200中，並置於且對齊於第一 基板G1上。此後，如第4圖所示’第一基板支架520之失具522 夾持第一基板GH以及其上所放置之第一沉積遮罩Ml，並接著將 第一基板支架520旋轉90度，以將第一基板G1轉變成垂直狀態。 如此一來，第一基板G1之一外表面即面朝沉積源540之一喷射方 向。將一蒸發之原料透過沉積源540喷射至該一外表面上，以對 第一基板G1執行一第一薄膜製程。 14 201104008 參見第5圖，在裝载第—基板⑴之同時或之後，將沿第二製程 線以水平狀態傳送之第二基板⑺透過第二基板入口㈣裝載入 製程腔室200内。將職載之第二基板Q置於以水平狀態設置之 第基板支木530之平台上，並將自連接至製程腔室之第二遮罩 腔室320供應之第二沉積遮罩M2(參見第置於且對齊於第 二基板G2上。此後，如筮&園_ 俊如第6圖所不，第二基板支架53〇之夹具 川央持第二基板G2以及其上所放置之第二沉積遮罩M2，並接 者將第二基板支架530旋轉9〇度，以將第二基板⑺轉變成垂直 狀態·。此時，較佳於第一薄膜製程期間執行第二基板G2之放置/ 對齊過程以及第二沉積遮罩M2之放置/對齊過程。藉此，可縮短 製程等待時間並進而提高生產率。 參見第7圖，於完成第一薄膜製程後，將沉積源54〇之噴射方 向相對於第-基板支架520旋轉⑽度。如此一來，第二基板Μ =表面即面朝沉積源54〇之喷射方向。接著，將一蒸發之原 ’至第一基板G2之該一外表面上’以對第二基板⑺執行一 第-相製程。同時，於執行第二薄膜製程之同時，第—基板支 =520返回至原始水平狀態且第一沉積遮罩⑷自第—基板⑴分 ’如第8圖所示。此後，將第一基板⑴透過第—基板出口仙 裝載入下一腔室。同時，於完成第-及第二薄膜製程 灸’自第一基板⑴及第二基板G2分離之第一沉積遮罩⑷及第 遮罩M2停留於各自對應之腔室中，以供用於後續製程。倘 =又到污染或因長期使用而造成損壞以致需要更換第—遮罩及/ :罩，則將第-遮罩⑷及第二遮罩奶傳送至第_遮罩腔 至及第二遮罩腔室320,並卸載至大氣中。接著，藉由例如清 15 201104008 潔、修復等工作而重新使用第一沉積遮罩M1及第二沉積遮罩 M2。當然’第-遮罩腔t 31〇及第二遮罩㈣32〇可設置有複數 額外沉積遮罩’以供用於更換用過之沉積遮罩。 知上所述’因根據本發明實例性實施例之薄膜沉積系統可透過 設置於各該製程腔室21〇、22〇、23〇、、25〇、剔中之單個沉 積源540對設置於各該製程腔室2]〇、22〇、23〇、24〇、25〇、26〇 中之一或更多條製程線PL1、PL2執行連續之薄膜製程，故可節約 製造成本並同時提高生產率。此外，於對—條製程線pu執行一 4膜製程之同時’可對另—製程線上之基板G2執行基板傳送以及 基板/遮罩對齊以縮短等待時間，進而更提高生產率。 儘官上文係參照具體實施例描述一種用於沉積一薄膜之裝置、 方法及系統，然本發明並不僅限於此。因此，熟習此項技術者將 容易理解，可在不背離由隨附權利要求書所界定之本發明精神及 範圍之條件下對其作出各種修飾及改動。 【圖式簡單說明】 第1圖係為根據一實例性實施例，一種用於沉積一薄膜之系統 之一平面圖； 第2圖係為包含於第1圖所示薄膜沉積系統中之複數腔室其中 之任一者之一平面圖；以及 第3圖至第8圖係為根據—實例性實施例，一種用於沉積一薄 膜之系統之一單元製程之平面圖。 【主要元件符號說明】 16 201104008 110 :裝載腔室 120 :卸載腔室 200 :製程腔室 210 :製程腔室 220 :製程腔室 230 :製程腔室 231 :製程腔室 232 :製程腔室 233 :製程腔室 240 :製程腔室 250 ··製程腔室 260 :製程腔室 261 :製程腔室 262 :製程腔室 263 :製程腔室 310 :遮罩腔室 320 :遮罩腔室 410 :原料饋送器 511 a :基板入口 511b :基板入口 512a :基板出口 512b :基板出口 520 :基板支架 521 :平台 522 :夾具 523 :溫度控制器件 530 :基板支架 540 :沉積源 541 :沉積源 542 :沉積源 600 :緩衝腔室 610 :緩衝腔室 620 :緩衝腔室 G1 :基板 G2 :基板 Ml :遮罩 M2 :遮罩 PL1 :製程線 17 201104008 PL2 :製程線 18On the other hand, the so-called three primary colors independent pixel type OLED has recently attracted attention, and the three primary color independent pixel type 〇lED system uses a precision metal mask (FMM) to form blue in sequence. Color 4 201104008 (B), green (G) and red (R) light-emitting layers on large-area substrates. It is known that this three primary color independent pixel types have better color purity and luminous efficacy, and have the advantage of ensuring competitive price. However, for the two primary color independent pixel types, the blue green (G) and red (R) light emitting layers should be sequentially formed in separate independent processing chambers, so the multiple processes for performing the individual unit processes are used. The in-line type of chamber serial connection is sufficient. Therefore, it is necessary to convert the traditional cluster type into an inline type. However, inline types have the following problems compared to group types: there are many overlaps. Also, the construction cost of the production line is high, and the productivity is low due to the long process time. For the cluster type of the prior art, since a substrate is horizontally disposed to perform a thin film % (organic thin film deposition process), a severe substrate ridge phenomenon makes the device difficult to manufacture. In addition, since the deposition mask for a large-area substrate has a weight of more than several hundred kilograms, the substrate bending phenomenon may be aggravated and cause serious problems such as breakage of the substrate. SUMMARY OF THE INVENTION [Technical Problem] The present invention provides an apparatus, method and system for depositing a thin film by simultaneously processing a plurality of substrates and making process waiting time (for example, for setting/aligning substrates and/or covering) The time of the cover is minimized to achieve high productivity. The present invention also provides an apparatus, method and system for depositing a film which can reduce the construction of a production line by maximizing the commonality of a commonly available apparatus. The present invention also provides an apparatus, method and system for depositing a film that overcomes the phenomenon of substrate bending by placing a substrate in a vertical state to perform a thin film process on the substrate. [Technical Solution] According to an exemplary embodiment, there is provided an apparatus for depositing a film, comprising: a chamber for providing a reaction space; a first substrate holder and a second substrate holder spaced apart from each other And being mounted in the chamber; and a deposition source is mounted between the first substrate holder and the second substrate holder, and is configured to sequentially supply a direction of the first substrate holder and the second substrate holder Deposition of raw materials. The first substrate holder and the second substrate holder can be used to support a substrate in a vertical state. The first substrate holder and the second substrate holder may include: a platform for supporting the substrate; and a clamp for holding the substrate stably placed on the platform. The first substrate holder and the second substrate holder may further comprise a driving unit for standing the platform in a vertical state or lying the platform in a horizontal state. The deposition source is rotatable between the first substrate holder and the second substrate holder. The deposition source can be one of a one-point deposition source, a linear deposition source, and a planar deposition source. The chamber can be coupled to a mask chamber that is provided with a 6-series mask to each of the deposition masks. The bracket and the second substrate holder or the method for providing a film for depositing according to another exemplary embodiment include: a plurality of chambers connected in series, each of which is #r, a(2) mother 6 And a first process line (pr_s) and a second process line; the load-first substrate, the first substrate is transported along the first process line, and the chamber is designated to perform N-ary system: loading-second substrate 'the second substrate is transported into the cavity along the second process line to the "fixing chamber" for performing the unit process of the first substrate - Required for the two-unit process - pre-preparation; and when the first-unit process is completed, the second unit process is performed on the second substrate on which the pre-preparation has been completed. The first unit process can include supplying a material from one of the first substrate directions using the deposition source and the far first single unit process can include supplying the material in one of the second substrates by rotating the deposition source. The first unit process and the second unit process can be performed by evaporating and supplying an organic material. The above method may further include: unloading the first substrate from the designated chamber when the unit process of the second substrate is performed. The first substrate and the second substrate can be placed and transferred in a horizontal state. The first substrate and the second substrate can be placed and transferred in a vertical state. The first substrate and the second substrate can be placed in a vertical state to perform the unit process. The pre-preparation can include at least one of: aligning the second substrate to a pre-twisting position of 201104008, and arranging and aligning a deposition mask on the second substrate. According to a re-exemplary embodiment, a system for depositing a film is provided, comprising: a plurality of chambers connected in series; and a first process line and a second process line formed in the chambers, At least one of the chambers may be provided with: a first substrate holder included in the first process line; and a second substrate holder included in the second process line and the first substrate holder _Open: and - a deposition source, installed between the first substrate holder and the second substrate holder and used to supply-deposit material. / The deposition source is rotatable between the first substrate holder and the second substrate holder. The 忒/child source can be one of a one-point deposition source, a linear deposition source, and a planar deposition source. The chambers can include: a plurality of process chambers for performing a unit process; and a plurality of buffer chambers coupled between the process chambers. The process chambers can be coupled to a mask chamber for supplying a deposition mask or replacing the deposition mask. [Advantageous Effects] According to the present invention, since a sequential thin film process can be performed on two or more process lines disposed in each of the process chambers through a single deposition source disposed in each of the process chambers, Save manufacturing costs while increasing productivity. In addition, while performing a thin film process on one substrate on one process line, substrate transfer and substrate/masking can be performed on another substrate on the other process line, and the time is further increased, thereby further improving productivity. 8 201104008 In addition, since the substrate is disposed in a horizontal state when a substrate is transferred, the probability of the substrate being broken when the substrate is transferred is lowered, and the substrate is bent in the vertical state due to the substrate being disposed during the film processing. It occurs less, which makes the manufacture of the device easy. [Embodiment] Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, this Month may be in a different form and should not be construed as being limited to the examples described herein. The present invention is intended to be thorough and complete, and the scope of the present invention will be fully described by those skilled in the art, and the same reference numerals are used throughout. 1 is a thin film deposition system according to an exemplary embodiment, and Fig. 2 is a plan view of any of the plurality of chambers in the film deposition system, as shown in Fig. 1; Referring to Figures 1 and 2, the thin film deposition system comprises: a loading chamber no, located at the front end; an unloading chamber 12G, located at the rear end; and a plurality of unit chambers 200, 600, in a continuous manner ( The in丨ine manner is arranged between the loading chamber and the unloading chamber 120. At this time, the unit chambers 2, 6 are arranged in a row along the two process lines PL1 and pu. When a unit manufacturing process is performed on the first process line pLi, the second process line pL2 is pre-prepared, and the unit process of the first process line PL1 is completed, and the third process line-unit process can be continued. . The loading chamber to the 110 system is configured to receive the substrate G that has undergone the predetermined previous process in an atmospheric state and load the substrate G into the process chamber to 21 真空 in a vacuum state. Unload the chamber! The 〇 is used to receive the substrate G that has undergone a 201104008 series unit process from a process chamber, and unload the substrate G to a space at atmospheric pressure. Therefore, the load chamber 11G and the unloading chamber 12 () are used to change from the atmospheric pressure state to the vacuum state or vice versa. In addition, although not shown in the drawings, the loading chamber 11 and the unloading chamber 120 may be connected to a substrate transfer device (for example, a robot arm) and a substrate carrying unit (for example, a transfer box). (cassette)). The unit chambers 200, 600 include a plurality of process chambers 2, 22, 23, 24, 250, 260 (200) and are connected to the 玄 专 制 〇 21, 220, 230, 240, A plurality of buffer chambers 61, 620 (600) between 250 and 260 (200). The buffer chamber 600 provides an arbitrary space in which the substrate G stays for a certain period of time to wait for a process. In addition, a first mask chamber 310 for providing a first mask M1 to a first process line PL1 is connected to each of the processing chambers 200 arranged on the first process line pL1, and is used to provide a The second mask chamber 320 of the second mask M2 to the second process line PL2 is connected to each of the process chambers 200 arranged on the second process line PL2. A deposition mask μ1, M2 for a thin film deposition process or for replacement is stored in the first mask chamber 310 and the second mask chamber 320. Of course, since the first mask chamber 310 and the second mask chamber 320 can be shared, only a single common mask chamber can be connected to each of the processing chambers 200. Further, a stock feeder 410 for supplying a stock to a deposition source 540 can be coupled to some of the respective unit chambers. The process chambers 200 are used to perform a series of unit processes on the substrate G. For example, an exemplary embodiment is used to form an OLED including a hole injection layer (HIL), a hole transport layer (hole transport layer; HTL), an emission material layer (EML), an electron transport layer (10 201104008 ETL), and an electron injection layer (EIL), an anode is formed on the substrate G. To this end, the HIL forming chamber 210, the HTL forming chamber 220, the EML forming chamber 230, the ETL forming chamber 240, the EIL forming chamber 250, and the cathode forming chamber 260 are connected in series. At this time, the EML forming chamber 230 may further include a blue (B) EML forming chamber 23 1 , a green (G) EML forming chamber 232, and a red (R) EML forming chamber 233 to display natural colors. And the cathode forming chamber 260 may further include a plurality of cathode forming chambers 261, 262, 263 to form a cathode in the form of a multilayer structure. One of the process chambers is formed in a rectangular box shape to provide a reaction space for processing the substrate G. In addition, each processing chamber 200 has a first substrate inlet 511a, a first substrate holder 520, and a first substrate outlet 512a positioned along the first process line PL1, and has a second position along the second process line PL2. A substrate inlet 511b, a second substrate holder 530, and a second substrate outlet 512b. The first substrate inlet 511a and the second substrate inlet 511b are formed at a side wall of the process chamber 200 at intervals from each other, and the first substrate outlet 512a and the second substrate outlet 512b are formed at intervals from each other in the process chamber 200. Side wall. The substrate inlets 511a, 511b and the substrate outlets 512a, 512b may be constituted by slit valves. Each of the substrate holders 520, 530 includes: a platform for supporting a back surface of the substrate G1 or G2; a clamp 522 mounted in the platform 521 for holding the substrate G1 or G2; and a driver (not shown) The platform 521 is used to stand in a vertical state or lie flat in a horizontal state. Unlike the exemplary embodiment, if the substrates G1, G2 are loaded in each of the process chambers 210, 220, 230, 240, 250, 260, the driver can be omitted. 11 201104008 Inside or below the platform 521, a temperature control device 523 can be provided to maintain the substrates G1, G2 placed on the platform 521 at a temperature suitable for performing a process. The temperature control means 523 may be constituted by at least one of the following: a heating means for heating the substrates G1, G2; a cooling means for cooling the substrates G1, G2; and a combination thereof. The present exemplary embodiment enhances the reactivity between the substrates G1, G2 and one of the deposited material layers deposited on the substrates G1, G2 by maintaining the temperature of the substrates G1, G2 at a process temperature by using a cooling device. When the state of the substrates G1, G2 placed on the stage 521 is changed from the horizontal state to the vertical state or from the vertical state to the horizontal state, the jig 522 holds the edges of the substrates G1, G2 to prevent the substrates G1, G2 from moving. In the case of the present exemplary embodiment, in order to control one of the thin film patterns formed on the substrates G1, G2, deposition masks M1 and M2 each having a predetermined deposition pattern are disposed on the substrates G1 and G2, respectively. Therefore, it is preferable to use the jig 522 for holding the substrates G1, G2 and the deposition masks M1, M2 on the stage 521. The first substrate holder 520 and the second substrate holder 530 are spaced apart from each other by a predetermined distance on the same horizontal plane. Here, the predetermined distance may be equal to or greater than a distance when one of the first substrate holder 520 and the second substrate holder 530 is rotated from a vertical state to a horizontal state or from a horizontal state to a vertical state, the other is not Affected by the rotator. The deposition source 540 is located between the first substrate holder 520 and the second substrate holder 530 which are spaced apart from each other by the predetermined distance. The deposition source 540 is disposed to be rotated toward a vertical state in the substrates G1 and G2 to perform one of the deposition processes, and is used to supply an evaporation material in a direction toward the substrate G (ie, along a deposition surface direction). . Although not shown in Fig. 12, 201104008, the deposition source 540 has a crucible in which a raw material is contained, a heating unit for evaporating the raw material, and an ejector for ejecting the evaporated raw material. The deposition source 540 can be one of a point-type deposition source, a line-type deposition source, and a plane-type deposition source according to a process state. The present exemplary embodiment utilizes a linear deposition source 540 comprising a plurality of point deposition sources 541, 542 arranged in a straight line pattern, and the linear deposition source 540 is driven in the left and right direction by a reciprocating drive member The material is uniformly supplied (or sprayed) over the entire area of one of the substrates G1, G2 during reciprocation. In particular, the deposition source 540 according to the present exemplary embodiment is configured such that the deposition source 540 can be from the first substrate holder 520 in one direction of the second substrate holder 530 or from the second substrate holder 530 along the first substrate holder 520. One direction is rotated 180 degrees to spray the material. Thus, although a two-row process line is formed in a single chamber, the process of the two-process line can be performed using a single deposition source 540. Now, a thin film deposition process using a thin film deposition system having the above configuration will be briefly described with reference to Fig. 1. The substrate G having the anode formed through a prior process is loaded into the load chamber 110 in an atmospheric state, and then the inside of the load chamber 110 is converted into a vacuum state. Next, the substrate G is sequentially loaded into the process chambers 210, 220, 230, 240, 250, 260, and the process chambers 210, 220, 230, 240, 250, 260 are along the selected first process line and the first The two process lines are alternately arranged to perform a series of unit processes. In other words, the substrate G is sequentially loaded into the HIL forming chamber 210, the HTL forming chamber 220, and the EML forming chambers 231, 232, 233 in a vacuum state. Thereby, a HIL, an HTL and an EML are formed on the anode of the substrate G in a sequence of 13 201104008. Thereafter, the obtained substrate G to the ETL forming chamber 240, the EIL forming chamber 250, and the cathode forming chambers 261, 262, 263 are sequentially loaded. Thereby, an ETL, an EIL, and a multilayer cathode are formed on the EML of the substrate G to form an OLED. Next, the substrate G is transferred to the unloading chamber 120 and then unloaded to the outside in an atmospheric state. Meanwhile, in the thin film deposition process, the substrate G can be transferred in a vertical state or a horizontal state. However, if the transfer of the substrate G is performed in a horizontal state, a process of changing the substrate from the horizontal state to the vertical state in each of the process chambers 210, 220, 230, 240, 250, 260 is required. Hereinafter, a process of converting a substrate from a horizontal state to a vertical state to perform a unit process will be described in more detail with reference to Figs. 3 to 8. 3 through 8 are plan views of a unit process of a thin film deposition system, according to an exemplary embodiment. Referring to FIG. 3, the first substrate G1 transferred in a horizontal state along the first process line is loaded into the process chamber 200 through the first substrate inlet 511a' and the loaded first substrate G1 is placed in a horizontal state. On the platform of the first substrate holder 520. Next, the first deposition mask M1 (see Fig. 4) is loaded into the process chamber 200 from the first mask chamber 310 connected to the process chamber 200, and placed and aligned on the first substrate G1. Thereafter, as shown in FIG. 4, the missing member 522 of the first substrate holder 520 holds the first substrate GH and the first deposition mask M1 placed thereon, and then rotates the first substrate holder 520 by 90 degrees to The first substrate G1 is converted into a vertical state. As a result, the outer surface of one of the first substrates G1 faces the ejection direction of one of the deposition sources 540. An evaporated material is sprayed onto the outer surface through a deposition source 540 to perform a first thin film process on the first substrate G1. 14 201104008 Referring to Fig. 5, the second substrate (7) conveyed in a horizontal state along the second process line is loaded into the process chamber 200 through the second substrate inlet (4) simultaneously with or after the loading of the first substrate (1). The second substrate Q of the job is placed on the platform of the substrate board 530 disposed in a horizontal state, and the second deposition mask M2 is supplied from the second mask chamber 320 connected to the process chamber (see First placed and aligned on the second substrate G2. Thereafter, as in the case of 筮& 园 俊, as shown in Fig. 6, the second substrate holder 53 is held by the second substrate G2 and the second substrate G2 Two deposition masks M2, and the second substrate holder 530 is rotated by 9 degrees to convert the second substrate (7) into a vertical state. At this time, it is preferable to perform the placement of the second substrate G2 during the first film processing. The alignment process and the placement/alignment process of the second deposition mask M2, thereby shortening the process waiting time and thereby increasing the productivity. Referring to Fig. 7, after the first film process is completed, the deposition direction of the deposition source 54 is Rotating (10) degrees with respect to the first substrate holder 520. Thus, the second substrate Μ = surface is facing the ejection direction of the deposition source 54. Then, an evaporation original 'to the outer surface of the first substrate G2 Upper 'to perform a first-phase process on the second substrate (7). While the second thin film process is being performed, the first substrate support 520 returns to the original horizontal state and the first deposition mask (4) is divided from the first substrate (1) as shown in Fig. 8. Thereafter, the first substrate (1) is transmitted through the first - the substrate exit is loaded into the next chamber. At the same time, the first deposition mask (4) and the mask M2 separated from the first substrate (1) and the second substrate G2 are completed at the completion of the first and second film process moxibustion In each of the corresponding chambers for subsequent processing. If the pollution is caused by pollution or long-term use, so that the first mask and/or the cover need to be replaced, the first mask (4) and the second mask milk are used. Transfer to the mask cavity to the second mask chamber 320 and unload it into the atmosphere. Then, the first deposition mask M1 and the second deposition mask are reused by, for example, cleaning, repairing, repairing, etc. Cover M2. Of course, the 'first-mask cavity t 31 〇 and the second mask (four) 32 〇 may be provided with a plurality of additional deposition masks 'for replacement of used deposition masks. Known as 'in accordance with an example of the present invention The thin film deposition system of the embodiment is permeable to each of the processing chambers 21 , 22 〇, 23 〇, 25 〇, a single deposition source 540 of the pair is disposed in each of the process chambers 2] 〇, 22 〇, 23 〇, 24 〇, 25 〇, 26 之一 one or more The process lines PL1 and PL2 perform a continuous film process, thereby saving manufacturing costs and improving productivity. Further, while performing a 4-film process on the process line pu, the substrate can be executed on the substrate G2 on the other process line. The transfer and the substrate/mask alignment are aligned to shorten the waiting time, thereby further increasing the productivity. The apparatus, method and system for depositing a film are described above with reference to the specific embodiments, but the present invention is not limited thereto. It will be readily apparent to those skilled in the art that various modifications and changes can be made without departing from the spirit and scope of the invention as defined by the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a plan view of a system for depositing a film according to an exemplary embodiment; and FIG. 2 is a plurality of chambers included in the film deposition system shown in FIG. One of the plan views; and Figures 3 through 8 are plan views of a unit process for a system for depositing a film, in accordance with an exemplary embodiment. [Main component symbol description] 16 201104008 110: loading chamber 120: unloading chamber 200: processing chamber 210: processing chamber 220: processing chamber 230: processing chamber 231: processing chamber 232: processing chamber 233: Process chamber 240: process chamber 250 · process chamber 260: process chamber 261: process chamber 262: process chamber 263: process chamber 310: mask chamber 320: mask chamber 410: material feed 511 a : substrate inlet 511b : substrate inlet 512a : substrate outlet 512b : substrate outlet 520 : substrate holder 521 : platform 522 : jig 523 : temperature control device 530 : substrate holder 540 : deposition source 541 : deposition source 542 : deposition source 600 : buffer chamber 610 : buffer chamber 620 : buffer chamber G1 : substrate G2 : substrate M1 : mask M2 : mask PL1 : process line 17 201104008 PL2 : process line 18