TWI386500B - Apparatus for depositing film and system for depositing film having the same - Google Patents

Description

Thin film deposition device and system thereof

The present invention relates to an apparatus for depositing a film, and more particularly to a thin film deposition apparatus for forming a film on a substrate, and a method for making a plurality of thin film deposition apparatuses in-line (in-line) A type of thin film deposition system.

Unlike a liquid crystal display (LCD), an organic light emitting diode (OLED) is a self-luminous device that eliminates the need for a backlight unit, thereby reducing power consumption. In addition, OLEDs have a wide viewing angle and fast response time, so display devices using OLEDs are generally capable of achieving a high quality image without the drawback of narrow viewing angles and afterimages.

The OLED is produced by depositing a plurality of films such as an organic film and a metal film. Typically, a cluster system is used to deposit a thin film system in which a plurality of unit cells for performing a sequence of unit processes are connected around a circular transfer chamber. According to the cluster system, substrate transfer and device processing are performed using the above-described respective chambers while the glass substrates are horizontally placed. One of the advantages of clustered systems is the ability to perform a sequence of processes in rapid succession. In particular, there is also an advantage in that the replacement of a deposition mask can be conveniently performed, and the replacement of the deposition mask is a very important process in the manufacture of OLEDs.

Recently, an OLED using a three-color independent pixel system has attracted attention. In such an OLED, a fine metal mask (FMM) is sequentially used to form a blue (B) light-emitting layer, green (G). The luminescent layer and the red (R) luminescent layer are on a large area substrate. The three-color independent pixel system is known to improve color purity and optical efficiency and enhance price competitiveness.

However, in the three-color independent pixel system, the B, G, and R light-emitting layers are sequentially formed in separate process chambers, which requires an in-line type in which the process chambers for performing the unit processes are connected in series with each other. system. Therefore, it is necessary to turn a conventional cluster system into an inline system. However, compared to clustered systems, in-line system production lines are expensive to construct due to the large number of overlapping instruments required. In addition, because of the low processing speed, the productivity of in-line systems is not as good as that of cluster systems.

In addition, since the conventional cluster system performs a thin film process (organic film forming process) while the substrate is horizontally placed, it can cause the substrate to be tilted, bent, and skewed and causes difficulty in the device manufacturing process. Since the deposition mask used for large-area substrates weighs more than several hundred kilograms, the substrate may be broken due to tilting, bending, and skewing problems.

The present invention provides a thin film deposition apparatus and a thin film deposition system thereof capable of minimizing the waiting time of each process (for example, loading and fixing of a substrate and placement and alignment of a deposition mask) by simultaneously processing a plurality of substrates Achieve high productivity.

The present invention also provides a thin film deposition apparatus and a thin film deposition system thereof capable of reducing the construction cost of a production line by effectively sharing an overlapping apparatus.

The present invention also provides a thin film deposition apparatus and a thin film deposition system thereof capable of preventing the substrate from being tilted, bent, and skewed by supporting the substrate to stand vertically in a thin film process.

According to an exemplary embodiment, a thin film deposition apparatus includes: a transfer chamber for transferring a substrate therein; and a first process chamber and a second process chamber, respectively connected to both sides of the transfer chamber. The first process chamber and the second process chamber respectively include: a first substrate holder and a second substrate holder configured to be spaced apart from each other; and a spray unit disposed on the first substrate holder and Between the second substrate holders, a deposition material is sequentially supplied to the first substrate holder and the second substrate holder.

The first substrate holder and the second substrate holder can support the substrate to stand vertically.

The transfer chamber can include a substrate rotating member for rotating the substrate and enabling the substrate to stand vertically or horizontally.

The spray unit is rotatable between the first substrate holder and the second substrate holder.

One of the ejection unit ejection structures may be one of a point-type structure, a line-type structure, and a plane-type structure.

Each of the first process chamber and each of the second process chambers may include a mask chamber connected thereto, the mask chamber for providing a deposition mask to the first substrate holder and the second substrate The holder and/or the replacement of a deposition mask.

According to another exemplary embodiment, a thin film deposition system includes: a plurality of serially connected transfer chambers for transferring a substrate therein; and a plurality of first process chambers and a plurality of second process chambers respectively connected to the transfer chambers At least one of the sides. The first process chamber and the second process chamber may respectively include: a first substrate holder and a second substrate holder configured to be spaced apart from each other; and a spray unit disposed on the first substrate holder and Between the second substrate holders, a deposition material is sequentially supplied to the first substrate holder and the second substrate holder.

The transfer chamber may include: a plurality of distribution chambers connected to the first process chamber and the second process chamber for dispensing a substrate; and a plurality of buffer chambers connected between adjacent distribution chambers for temporarily accommodating the Such as the substrate.

The thin film deposition system may further include: a loading chamber connected to one of the leading ends of the transfer chambers for loading a substrate from the outside; and an unloading chamber connected to one of the rear ends of the transfer chambers (rear) End) and used to unload a substrate to the outside.

The first substrate holder and the second substrate holder can support the substrate to stand vertically.

The transfer chamber can include a substrate rotating member for rotating the substrate and enabling the substrate to stand vertically or horizontally.

The spray unit is rotatable between the first substrate holder and the second substrate holder.

Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the invention may be embodied in different forms and should not be construed as being limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

1 is a plan view of a thin film deposition apparatus according to an exemplary embodiment, and FIG. 2 is a plan view showing a part of some chambers of the thin film deposition apparatus shown in FIG. 1.

Referring to FIGS. 1 and 2, a plurality of transfer chambers 400 (410 and 420) are connected in series between a loading chamber 110 and an unloading chamber 120, and the loading chamber 110 is disposed at a leading end of the transfer chamber 400. The unloading chamber 120 is disposed at one of the rear ends of the transfer chamber 400. Some of the transfer chambers 400 of the transfer chamber 400 are provided with a first process chamber 200A and a second process chamber 200B. Therefore, the in-line system is constructed as a whole, in which the substrate transfer and the unit process are performed in series. The two substrates (G1 and G2, and G3 and G4, respectively) may be carried into the internal spaces of the first process chamber 200A and the second process chamber 200B. Therefore, while the unit process is performed on the two substrates G1 and G2 on one side, the pre-processing operation can be performed on the other two substrates G3 and G4 on the other side.

The loading chamber 110 receives the substrates G1, G2, G3, and G4 that have undergone the predetermined previous process at atmospheric pressure, and carries the substrates G1, G2, G3, and G4 to the transfer chamber 400 in a vacuum state. The unloading chamber 120 receives the substrates G1, G2, G3, and G4 that have undergone a sequence of unit processes from the transfer chamber 400, and carries the substrates G1, G2, G3, and G4 to an atmospheric pressure state for subsequent processing. Therefore, the loading chamber 110 and the unloading chamber 120 are used to switch between an atmospheric state and a vacuum state. Although not shown, the loading chamber 110 and the unloading chamber 120 can be coupled to a substrate transfer unit (e.g., a robotic arm) and a substrate loading unit (e.g., a substrate cassette).

More specifically, the transfer chamber 400 includes a distribution chamber 410 and a buffer chamber 420, and the distribution chamber 410 is connected to the first process chamber 200A and the second process chamber 200B to distribute the substrates G1, G2, G3, and G4, and the buffer chamber 420 is disposed in the corresponding The second distribution chambers 410 temporarily accommodate the substrates G1, G2, G3, and G4. Here, the buffer chamber 420 provides a space in which the substrates G1, G2, G3, and G4 temporarily stay. Each of the dispensing chambers 410 includes a substrate rotating member (not shown) for rotating the substrate and enabling the substrate to stand vertically or horizontally. The substrates G1, G2, G3, and G4 transferred from the previous position in the horizontal position are rotated by the substrate rotating member to stand vertically, and are carried into the first process chamber 200A and the second process chamber 200B. The substrates G1, G2, G3, and G4 carried from the first process chamber 200A and the second process chamber 200B in a vertical position are rotated to be horizontally placed and then transferred to the next chamber. Therefore, the substrates G1, G2, G3, and G4 are vertically placed during the film process to avoid tilting, bending, or skewing, and are horizontally placed during transmission to prevent breakage. However, the substrates G1, G2, G3, and G4 can also be transferred in a vertical position. In this case, the substrate rotating member can be omitted from the dispensing chamber 410.

Each of the distribution chambers 410 can connect the first process chamber 200A and the second process chamber 200B on both sides thereof. In addition, the first mask chamber 311 and the second mask chamber 312 for supplying the deposition masks M1 and M3 and the first mask chamber 321 and the second mask chamber 322 for supplying the deposition masks M2 and M4, respectively It is connected to the first process chamber 200A and the second process chamber 200B. The first mask chambers 311, 321 and the second mask chambers 312, 322 store deposition masks for film processing or deposition masks for replacement. Since each pair of first and second mask chambers 311 and 312, and 321 and 322 can be shared, the first process chamber 200A and the second process chamber 200B can include only a single mask chamber.

The first process chamber 200A and the second process chamber 200B of one distribution chamber 410 perform the same unit process. The first process chambers 211, 221, 231, 241, 251, and 261 and the second process chambers 212, 222, 232, 242, 252, and 262 connected to the corresponding distribution chamber 410 are used to perform a series of device processes on the substrate. For example, in accordance with the present invention, the process chambers 200A and 200B are used to fabricate an organic light emitting diode (OLED) in a manner such that a hole injection layer (HIL), a hole transport layer (HTL), an illuminating material layer (EML), an electron transport layer (ETL), an electron injection layer (EIL), and a The cathodes are sequentially deposited on a substrate G which is polarized on the outside. To this end, the first process chamber 211 and the second process chamber 212 are connected to a first distribution chamber to form an HIL, and the first process chamber 221 and the second process chamber 222 are connected to a second distribution chamber to form an HTL. Next, the first process chamber 231 and the second process chamber 232 are connected to a third distribution chamber to form an EML. The first process chamber 241 and the second process chamber 242 are coupled to a fourth distribution chamber to form an ETL. The first process chamber 251 and the second process chamber 252 are coupled to a fifth distribution chamber to form an EIL. The first process chamber 261 and the second process chamber 262 are connected to a sixth distribution chamber to form a cathode. The first chamber 231 and the second chamber 232 for forming the EML may include a plurality of chambers 231a, 231b, and 231c, and 232a, 232b, and 232c, respectively. The first chamber 261 and the second chamber 262 for forming a cathode may respectively include a plurality of chambers 261a, 261b, and 261c, and 262a, 262b, and 262c for forming a multilayer cathode.

Each of the process chambers 200A and 200B has a rectangular box shape and includes a predetermined reaction space for processing the substrates G1, G2, G3, and G4. The reaction spaces of the process chambers 200A and 200B respectively include a first substrate holder 520 and a second substrate holder 530, and a first substrate holder 620 and a second substrate holder 630. Each pair of substrate holders are disposed at intervals. The support substrates G1, G2, G3, and G4 are in a vertical position. In addition, the ejection units 540 and 640 are installed between the first substrate holder 520 and the second substrate holder 530 and between the first substrate holder 620 and the second substrate holder 630. The process chambers 200A and 200B also include a first gate 511 and a second gate 512, respectively, and a first gate 611 and a second gate 612. The gates are arranged at an interval and connected to the distribution chamber 410 to allow the substrate G to enter and exit. Here, the first gates 511, 611 and the second gates 512, 612 may be a slit valve.

Each of the first substrate holders 520 and 620 and the second substrate holders 530 and 630 includes: a support member 521 adapted to support one of the rear sides of the substrates G1, G2, G3, and G4; and a clamp 522 mounted to the support member The 521 is for fixing the substrates G1, G2, G3, and G4; and a temperature controller 523 is adapted to control the substrate temperature. The temperature controller 523 is mounted on one of the inner side or the lower side of the support member 521, and controls the substrate temperature to an appropriate temperature to process the substrates G1, G2, G3, and G4 supported on the support member 521. The temperature controller 523 can be a combination comprising a cooling member for cooling the substrates G1, G2, G3, and G4 and at least one of heating members for heating the substrates G1, G2, G3, and G4. According to this embodiment, a cooling path is formed in the support member 521 to maintain the substrate at the process temperature. Thereby, the reactivity between the substrate and the material deposited on the upper surfaces of the substrates G1, G2, G3, and G4 is improved.

The jig 522 fixes the edges of the substrates G1, G2, G3, and G4 so that the substrates G1, G2, G3, and G4 supported in the support 521 do not move during processing. Since the deposition masks M1, M2, M3, and M4 are disposed on the substrates G1, G2, G3, and G4 to control the film patterns to be formed on the substrates G1, G2, G3, and G4, it is preferable to enable the chuck 522 to mount the substrate G1. The G2, G3, and G4 and the deposition masks M1, M2, M3, and M4 are all fixed to the support member 521.

The ejecting units 540 and 640 disposed between the respective pairs of first and second substrate holders 520 and 530, and 620 and 630 eject a vaporized material to the first substrate holders 520 and 620 or the second substrate holders 530 and 630. Although not shown, the spray units 540 and 640 respectively include a crucible for storing the raw material, a heating member for vaporizing the raw material, and a spray member for ejecting the vaporized raw material. The ejection member has any one of a point-type ejection structure, a line-type ejection structure, and a plane-type ejection structure. For example, a linear cell source composed of a plurality of point cell sources arranged in a line may be used as the ejection units 540 and 640. The linear unit sources 540 and 640 are reciprocally moved in the lateral direction by a reciprocating driving member (not shown), thereby uniformly ejecting the raw materials to the entire surfaces of the substrates G1, G2, G3, and G4.

According to the present embodiment, the ejection units 540 and 640 can be rotated about 180° around the first substrate holders 520 and 620 to eject the raw materials toward the second substrate holders 530 and 630. The firing units 540 and 640 can also be rotated about 180° in opposite directions to spray the material toward the first substrate holders 520 and 620. Therefore, the substrates G1, G2, G3, and G4 disposed on both sides of one of the chambers 200A or 200B can be sequentially processed by a single ejection unit.

Hereinafter, a film process using the thin film deposition system having the above structure will be briefly explained with reference to Fig. 1.

First, the substrate G polarized in the previous process is carried into the load chamber 110 at atmospheric pressure, and the inside of the load chamber 110 is placed in a vacuum state. The substrates G under vacuum are sequentially transferred to the transfer chambers 410 and 420 connected in series with the load chamber 110. Carrying the substrate G to some of the transfer chambers connected to the dispensing chamber 410 (ie, the respective process chambers 211, 221, 231, 241, 251, and 261, and 212, 222, 232, 242, 252, and 262) To experience the various unit processes. Specifically, the substrate G is sequentially transferred to the HIL forming chambers 211 and 212, the HTL forming chambers 221 and 222, and the EML forming chambers 231 and 232 under vacuum. Accordingly, HIL, HTL, and EML are sequentially formed on the two electrodes of the substrate G. Next, the substrate G is sequentially transported into the ETL forming chambers 241 and 242, the EIL forming chambers 251 and 252, and the cathode forming chambers 261 and 262. Accordingly, ETL, EIL, and a multilayer cathode are sequentially formed on the EML of the substrate G, thereby fabricating an OLED. After the device process, the substrate G is transferred to the unloading chamber 120 and sent to the outside at atmospheric pressure.

During the thin film deposition process, the substrate G is transported in a vertical or horizontal position and undergoes a thin film process in a vertical position. When the substrate transfer is performed by placing the substrate G in a horizontal position, the substrate G needs to be rotated from the horizontal position to the vertical position in the respective transfer chambers 410. Hereinafter, the process of rotating the substrate G from the horizontal position to the vertical position to perform the unit process will be explained in more detail with reference to FIGS. 3 to 8. 3 to 8 are plan views showing respective unit processes of the thin film deposition system according to this exemplary embodiment.

First, as shown in FIGS. 3 and 4, the first substrate G1 and the second substrate G2 at the horizontal position are carried into the distribution chamber 410 and rotated to stand vertically. After being carried into the first process chamber 200A and the second process chamber 200B, the substrates G1 and G2 are fixed by the corresponding substrate holders 520 and 630. Here, the substrates G1 and G2 may be simultaneously transferred or transmitted at a predetermined time difference. Next, deposition masks M1 and M2 are supplied from the mask chambers 311 and 322 connected to the first process chamber 200A and the second process chamber 200B, respectively. The deposition masks M1 and M2 are disposed and aligned on the front side of the deposition surfaces of the substrates G1 and G2. Next, the ejection units 540 and 640 are set to be ejected toward the deposition surfaces of the substrates G1 and G2 as shown in FIG. The vaporized raw material is sprayed onto the deposition surfaces of the substrates G1 and G2, thereby performing a first thin film process on the first substrate G1 and the second substrate G2.

Next, as shown in FIGS. 5 and 6, the third substrate G3 and the fourth substrate G4 are carried into the distribution chamber 410 during the first thin film process. The third substrate G3 and the fourth substrate G4 are rotated in the distribution chamber 410 to stand vertically, and then carried into the first process chamber 200A and the second process chamber 200B, and then fixed to the corresponding substrate holders 530 and 620, respectively. . The deposition masks M3 and M4 are supplied from the mask chambers 312 and 321 connected to the first process chamber 200A and the second process chamber 200B, respectively. The deposition masks M3 and M4 are placed and aligned on the front side of the deposition surfaces of the substrates G3 and G4. Therefore, it is preferable to perform loading and fixing of the third substrate G3 and the fourth substrate G4 and placement and alignment of the deposition masks M3 and M4 during the first film process. Accordingly, the time to wait for the next process (i.e., a second film process) can be shortened and thereby the productivity can be improved.

Next, as shown in Fig. 7, after the completion of the first film process, the ejection units 540 and 640 are rotated by about 180 to be ejected in the opposite direction. Therefore, the deposition surfaces of the third substrate G3 and the fourth substrate G4 face the ejection direction of the ejection units 540 and 640. In this state, the vaporized raw material is ejected to the deposition surfaces of the third substrate G3 and the fourth substrate G4 via the ejecting units 540 and 640. Thus, the second thin film process is performed on the third substrate G3 and the fourth substrate G4.

Next, as shown in FIGS. 7 and 8, during the second thin film process, the deposition masks M1 and M2 are separated from the first substrate G1 and the second substrate G2 which have completed the first thin film process. The first substrate G1 and the second substrate G2 from which the masks M1 and M2 have been separated are carried into the distribution chamber 410, rotated to a horizontal position, and sequentially transferred to the next processing chamber in a horizontal position to execute a series of Device process. Therefore, it is preferable to perform the loading and unloading of the first substrate G1 and the second substrate G2 and the separation of the deposition masks M1 and M2 during the second thin film process. Accordingly, the time to wait for the next first film process can be shortened and thus the productivity can be improved.

The deposition masks M1, M2, M3, and M4 used in the first film process and the second film process are held in their corresponding chambers for subsequent film processes. When contaminated or damaged, the deposition masks M1, M2, M3, and M4 are transferred to the mask chambers 311, 312, 313, and 314, respectively, and carried out to the atmosphere for replacement. The deposition masks M1, M2, M3, and M4 can be reused after being cleaned or repaired. When the alternate deposition mask for replacing the used deposition mask is stored in the mask chambers 311, 312, 313, and 314, the suspension time due to the replacement can be minimized.

As described above, the thin film deposition system according to the present embodiment can increase the process speed because it is configured to serially connect the plurality of process chambers 200A and 200B performing the same process to both sides of the respective transfer chambers 400 and simultaneously to the plural The substrates G1, G2, G3, and G4 perform a thin film process. Further, in the process chamber 200A or 200B, the raw materials are respectively ejected to the plurality of substrate holders 520 and 530, or 620 and 630 by a single ejection unit 540 or 640. That is, the thin film process is sequentially performed on the substrates G1, G2, G3, and G4 by a single ejection unit 540 or 640, thereby reducing cost and improving productivity. In addition, the substrate holders 520 and 530, or 620 and 630 are disposed on both sides of the process chamber 200A or 200B. Therefore, while the process is performed on one side, a pre-processing operation or a post-processing can be performed on the other side. The pre-processing operations may include loading and unloading of the substrate and placement and alignment of the deposition mask. Post-processing operations may include loading and unloading of the substrate and separation of the deposition mask. Accordingly, the overall waiting time can be shortened, thereby greatly increasing productivity.

According to the present exemplary embodiment, since the plurality of process chambers for performing the same process are connected to both sides of each transfer chamber, the thin film process can be simultaneously performed on the plurality of substrates, thereby shortening the processing time.

In addition, the thin film process is sequentially performed on the substrates in each process chamber by a single ejection unit. Accordingly, productivity can be improved while reducing costs.

Since the substrate holders are disposed on both sides of the process chamber, the pre-processing operation or the post-processing operation can be performed on the other side while the process is performed on one side. As a result, the overall process waiting time can be shortened, which in turn increases productivity.

In addition, the substrate is laid flat horizontally during its transport and vertically during the film processing. Therefore, the substrate can be prevented from being broken during the transfer, and the substrate can be prevented from being inclined, bent or skewed during the film process, which is advantageous for the manufacture of the device.

Although the thin film deposition apparatus and the thin film deposition system are explained above with reference to the specific embodiments, it is not limited thereto. It will be apparent to those skilled in the art that various modifications and changes can be made without departing from the spirit and scope of the invention as defined by the appended claims.

110. . . Loading room

120. . . Unloading room

200. . . Process room

200A. . . First process room

200B. . . Second process room

211, 221, 231, 241, 251, 261. . . First process room

212, 222, 232, 242, 252, 262. . . Second process room

231a, 231b, 231c. . . room

232a, 232b, 232c. . . room

261a, 261b, 261c. . . room

262a, 262b, 262c. . . room

300. . . Mask room

311, 321. . . First mask room

312, 322. . . Second mask room

400. . . Transfer room

410. . . Distribution room

420. . . Buffer chamber

511, 611. . . First gate

512, 612. . . Second gate

520, 620. . . First substrate holder

521. . . supporting item

522. . . Fixture

523. . . Temperature Controller

530, 630. . . Second substrate holder

540, 640. . . Spray unit

G. . . Substrate

G1, G2, G3, G4. . . Substrate

M1, M2, M3, M4. . . Deposition mask

Exemplary embodiments of the present invention can be understood in more detail by reading the above description in conjunction with the accompanying drawings in which:

1 is a plan view of a thin film deposition system according to an exemplary embodiment;

Figure 2 is a plan view showing one of the chambers of the thin film deposition system shown in Figure 1;

3 to 8 are plan views showing respective unit processes of the thin film deposition system according to this exemplary embodiment.

200A. . . First process room

200B. . . Second process room

311, 321. . . First mask room

312, 322. . . Second mask room

410. . . Distribution room

511, 611. . . First gate

512, 612. . . Second gate

520, 620. . . First substrate holder

521. . . supporting item

522. . . Fixture

523. . . Temperature Controller

530, 630. . . Second substrate holder

540, 640. . . Spray unit

G1, G2, G3, G4. . . Substrate

M1, M2, M3, M4. . . Deposition mask

Claims (12)

A thin film deposition apparatus comprising: a transfer chamber for transferring a substrate therein; and a first process chamber and a second process chamber respectively connected to two sides of the transfer chamber, wherein the first process chamber and the The second process chambers respectively include: a first substrate holder and a second substrate holder configured to be spaced apart from each other; and a spray unit disposed between the first substrate holder and the second substrate holder And a method for sequentially supplying a deposition material to the first substrate holder and the second substrate holder. The thin film deposition apparatus of claim 1, wherein the first substrate holder and the second substrate holder are used to support the substrate to stand vertically. The thin film deposition apparatus of claim 2, wherein the transfer chamber comprises a substrate rotating member for rotating the substrate and enabling the substrate to stand vertically or horizontally. The thin film deposition apparatus of claim 1, wherein the ejection unit is rotatable between the first substrate holder and the second substrate holder. The thin film deposition apparatus of claim 1, wherein the ejection structure of one of the ejection units is a point-type structure, a line-type structure, or a plane-type structure. The thin film deposition apparatus of claim 1, wherein each of the first process chamber and each of the second process chambers includes a mask chamber connected thereto, the mask chamber for providing a deposition mask to The first substrate holder and the second substrate holder and/or for replacing a deposition mask. A thin film deposition system comprising: a plurality of serially connected transfer chambers for transferring a substrate therein; and a plurality of first process chambers and a plurality of second process chambers respectively connected to at least one of the sides of the transfer chambers The first process chamber and the second process chamber respectively include: a first substrate holder and a second substrate holder configured to be spaced apart from each other; and a spray unit disposed on the first substrate holder Between the second substrate holder and the second substrate holder, a deposition material is sequentially supplied to the first substrate holder and the second substrate holder. The thin film deposition system of claim 7, wherein the transfer chamber comprises: a plurality of distribution chambers connected to the first process chamber and the second process chamber for dispensing a substrate; and a plurality of buffer chambers connected to the phase Between the distribution chambers for temporarily accommodating the substrates. The thin film deposition system of claim 7, further comprising: a loading chamber connected to a leading end of the transfer chambers for loading a substrate from the outside; and an unloading chamber connected to the transfer chamber One of the rear ends is used to unload a substrate to the outside. The thin film deposition system of claim 7, wherein the first substrate holder and the second substrate holder are used to support the substrate to stand vertically. The thin film deposition system of claim 7, wherein the transfer chamber comprises a substrate rotating member for rotating the substrate and enabling the substrate to stand vertically or horizontally. The thin film deposition system of claim 7, wherein the ejection unit is rotatable between the first substrate holder and the second substrate holder.