TW200539322A - Epitaxially growing equipment - Google Patents

Epitaxially growing equipment Download PDF

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Publication number
TW200539322A
TW200539322A TW094105299A TW94105299A TW200539322A TW 200539322 A TW200539322 A TW 200539322A TW 094105299 A TW094105299 A TW 094105299A TW 94105299 A TW94105299 A TW 94105299A TW 200539322 A TW200539322 A TW 200539322A
Authority
TW
Taiwan
Prior art keywords
wafer
heating
wafer holder
height
gas
Prior art date
Application number
TW094105299A
Other languages
English (en)
Chinese (zh)
Other versions
TWI345264B (de
Inventor
Eiichi Shimizu
Nobuhito Makino
Manabu Kawabe
Original Assignee
Nikko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikko Materials Co Ltd filed Critical Nikko Materials Co Ltd
Publication of TW200539322A publication Critical patent/TW200539322A/zh
Application granted granted Critical
Publication of TWI345264B publication Critical patent/TWI345264B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
TW094105299A 2004-02-25 2005-02-22 Epitaxially growing equipment TW200539322A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004049125 2004-02-25

Publications (2)

Publication Number Publication Date
TW200539322A true TW200539322A (en) 2005-12-01
TWI345264B TWI345264B (de) 2011-07-11

Family

ID=34879535

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094105299A TW200539322A (en) 2004-02-25 2005-02-22 Epitaxially growing equipment

Country Status (8)

Country Link
US (1) US7670434B2 (de)
EP (1) EP1720200B1 (de)
JP (1) JP4647595B2 (de)
KR (1) KR101322217B1 (de)
CN (1) CN100539027C (de)
CA (1) CA2556066C (de)
TW (1) TW200539322A (de)
WO (1) WO2005081298A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI409359B (zh) * 2010-06-23 2013-09-21 Sharp Kk 氣相成長裝置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080210169A1 (en) * 2005-07-21 2008-09-04 Lpe S.P.A. System for Supporting and Rotating a Susceptor Inside a Treatment Chamber of a Wafer Treating Apparatus
KR100925060B1 (ko) * 2007-11-08 2009-11-03 삼성전기주식회사 화학 기상 증착 장치용 서셉터
EP2338164A4 (de) * 2008-08-29 2012-05-16 Veeco Instr Inc Waferträger mit veränderlicher thermischer beständigkeit
US8486726B2 (en) * 2009-12-02 2013-07-16 Veeco Instruments Inc. Method for improving performance of a substrate carrier
TW201239124A (en) * 2011-03-22 2012-10-01 Chi Mei Lighting Tech Corp Wafer susceptor and chemical vapor deposition apparatus
US10316412B2 (en) 2012-04-18 2019-06-11 Veeco Instruments Inc. Wafter carrier for chemical vapor deposition systems
CN103668123A (zh) * 2012-09-19 2014-03-26 甘志银 金属有机物化学气相沉积设备的载片盘
US10167571B2 (en) 2013-03-15 2019-01-01 Veeco Instruments Inc. Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems
US9716010B2 (en) 2013-11-12 2017-07-25 Globalfoundries Inc. Handle wafer
CN104818527A (zh) * 2015-04-08 2015-08-05 上海晶盟硅材料有限公司 外延片生产设备
TWI656235B (zh) * 2017-07-28 2019-04-11 漢民科技股份有限公司 化學氣相沉積系統

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JPS5944818A (ja) * 1982-09-07 1984-03-13 Toshiba Corp 加熱基台
JPS61112325A (ja) * 1984-11-07 1986-05-30 Hitachi Hokkai Semiconductor Kk 板状物回転処理装置
JPS61242014A (ja) * 1985-04-19 1986-10-28 Toshiba Corp 気相成長装置用サセプタ
JPH02151024A (ja) * 1988-12-01 1990-06-11 Kyushu Electron Metal Co Ltd 気相成長装置
JP2511336B2 (ja) * 1991-05-15 1996-06-26 株式会社荏原総合研究所 有機性汚水や汚泥からの水素生産法及び装置
JPH07176482A (ja) 1991-05-31 1995-07-14 At & T Corp エピタキシャル成長方法および装置
JPH06124901A (ja) 1992-10-09 1994-05-06 Furukawa Electric Co Ltd:The 化合物半導体薄膜の製造方法
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US6001183A (en) * 1996-06-10 1999-12-14 Emcore Corporation Wafer carriers for epitaxial growth processes
JPH118119A (ja) 1997-06-19 1999-01-12 Nissan Motor Co Ltd 電子コントロールユニット
JP2000355766A (ja) 1999-06-15 2000-12-26 Hitachi Kokusai Electric Inc 基板処理装置及び基板処理方法
US6494955B1 (en) * 2000-02-15 2002-12-17 Applied Materials, Inc. Ceramic substrate support
JP2002134484A (ja) * 2000-10-19 2002-05-10 Asm Japan Kk 半導体基板保持装置
JP2003037071A (ja) * 2001-07-25 2003-02-07 Shin Etsu Handotai Co Ltd サセプタ、気相成長装置および気相成長方法
JP3771475B2 (ja) * 2001-10-05 2006-04-26 忠行 今中 水素の製造法および製造装置
JP3857106B2 (ja) * 2001-11-06 2006-12-13 株式会社タクマ 微生物を用いた水素及びメタンの製造方法ならびに装置
JP4003527B2 (ja) 2002-04-25 2007-11-07 信越半導体株式会社 サセプタおよび半導体ウェーハの製造方法
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI409359B (zh) * 2010-06-23 2013-09-21 Sharp Kk 氣相成長裝置

Also Published As

Publication number Publication date
TWI345264B (de) 2011-07-11
US20070163504A1 (en) 2007-07-19
CA2556066A1 (en) 2005-09-01
EP1720200A4 (de) 2007-01-31
KR101322217B1 (ko) 2013-10-25
JP4647595B2 (ja) 2011-03-09
KR20070019689A (ko) 2007-02-15
CN100539027C (zh) 2009-09-09
JPWO2005081298A1 (ja) 2008-01-17
EP1720200B1 (de) 2014-12-03
WO2005081298A1 (ja) 2005-09-01
CN1965390A (zh) 2007-05-16
CA2556066C (en) 2013-07-16
EP1720200A1 (de) 2006-11-08
US7670434B2 (en) 2010-03-02

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