TW200538563A - High-purity Ru powder, sputtering target obtained by sintering the same, thin film obtained by sputtering the target and process for producing high-purity Ru powder - Google Patents
High-purity Ru powder, sputtering target obtained by sintering the same, thin film obtained by sputtering the target and process for producing high-purity Ru powder Download PDFInfo
- Publication number
- TW200538563A TW200538563A TW094105011A TW94105011A TW200538563A TW 200538563 A TW200538563 A TW 200538563A TW 094105011 A TW094105011 A TW 094105011A TW 94105011 A TW94105011 A TW 94105011A TW 200538563 A TW200538563 A TW 200538563A
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- Prior art keywords
- purity
- powder
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- 239000000843 powder Substances 0.000 title claims abstract description 59
- 239000010409 thin film Substances 0.000 title claims abstract description 14
- 238000005477 sputtering target Methods 0.000 title claims abstract description 9
- 238000000034 method Methods 0.000 title claims abstract description 8
- 238000005245 sintering Methods 0.000 title claims abstract description 8
- 238000004544 sputter deposition Methods 0.000 title abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 10
- 239000002994 raw material Substances 0.000 claims abstract description 8
- 238000005868 electrolysis reaction Methods 0.000 claims abstract 2
- 229910052751 metal Inorganic materials 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 7
- 230000002285 radioactive effect Effects 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052776 Thorium Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229910052723 transition metal Inorganic materials 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims 1
- 239000009600 shenyin Substances 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 22
- 239000002245 particle Substances 0.000 abstract description 17
- 238000009826 distribution Methods 0.000 abstract description 12
- 230000015572 biosynthetic process Effects 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 229910052708 sodium Inorganic materials 0.000 abstract description 9
- 239000007772 electrode material Substances 0.000 abstract description 7
- 229910052783 alkali metal Inorganic materials 0.000 abstract description 6
- 239000003990 capacitor Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 5
- 239000000383 hazardous chemical Substances 0.000 abstract 1
- 238000000746 purification Methods 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 9
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 229910052707 ruthenium Inorganic materials 0.000 description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 230000015654 memory Effects 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 238000007731 hot pressing Methods 0.000 description 4
- 229910052770 Uranium Inorganic materials 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000008151 electrolyte solution Substances 0.000 description 3
- 238000007670 refining Methods 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000010985 leather Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical class C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 235000005206 Hibiscus Nutrition 0.000 description 1
- 235000007185 Hibiscus lunariifolius Nutrition 0.000 description 1
- 244000284380 Hibiscus rosa sinensis Species 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 240000005373 Panax quinquefolius Species 0.000 description 1
- 244000028419 Styrax benzoin Species 0.000 description 1
- 235000000126 Styrax benzoin Nutrition 0.000 description 1
- 235000008411 Sumatra benzointree Nutrition 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229960002130 benzoin Drugs 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000003490 calendering Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 235000019382 gum benzoic Nutrition 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- QEHKBHWEUPXBCW-UHFFFAOYSA-N nitrogen trichloride Chemical compound ClN(Cl)Cl QEHKBHWEUPXBCW-UHFFFAOYSA-N 0.000 description 1
- 235000010987 pectin Nutrition 0.000 description 1
- 229920001277 pectin Polymers 0.000 description 1
- 239000001814 pectin Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/04—Alloys based on a platinum group metal
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
- C25C5/00—Electrolytic production, recovery or refining of metal powders or porous metal masses
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
- C25C5/00—Electrolytic production, recovery or refining of metal powders or porous metal masses
- C25C5/02—Electrolytic production, recovery or refining of metal powders or porous metal masses from solutions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/10—Reduction of greenhouse gas [GHG] emissions
- Y02P10/134—Reduction of greenhouse gas [GHG] emissions by avoiding CO2, e.g. using hydrogen
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
- Electrolytic Production Of Metals (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Electrodes Of Semiconductors (AREA)
- Manufacture And Refinement Of Metals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004056022 | 2004-03-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200538563A true TW200538563A (en) | 2005-12-01 |
| TWI303666B TWI303666B (enExample) | 2008-12-01 |
Family
ID=34908891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094105011A TW200538563A (en) | 2004-03-01 | 2005-02-21 | High-purity Ru powder, sputtering target obtained by sintering the same, thin film obtained by sputtering the target and process for producing high-purity Ru powder |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7578965B2 (enExample) |
| EP (1) | EP1724364B1 (enExample) |
| JP (2) | JP4522991B2 (enExample) |
| KR (1) | KR100881851B1 (enExample) |
| CN (1) | CN100552068C (enExample) |
| TW (1) | TW200538563A (enExample) |
| WO (1) | WO2005083136A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI579243B (zh) * | 2012-07-30 | 2017-04-21 | Jx Nippon Mining & Metals Corp | 釕燒結體濺鍍靶及釕合金燒結體濺鍍靶 |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2004001092A1 (ja) * | 2002-06-24 | 2005-10-20 | 株式会社日鉱マテリアルズ | ＡｌＲｕスパッタリングターゲット及びその製造方法 |
| US9732413B2 (en) * | 2005-06-16 | 2017-08-15 | Jx Nippon Mining & Metals Corporation | Ruthenium-alloy sputtering target |
| KR101007585B1 (ko) * | 2005-10-14 | 2011-01-14 | Jx닛코 닛세끼 킨조쿠 가부시키가이샤 | 고순도 루테늄 합금 타겟트 및 그 제조방법과 스퍼터막 |
| WO2007097396A1 (ja) * | 2006-02-22 | 2007-08-30 | Nippon Mining & Metals Co., Ltd. | 高融点金属からなる焼結体スパッタリングターゲット |
| JP4527743B2 (ja) * | 2007-03-09 | 2010-08-18 | アサヒプリテック株式会社 | ルテニウム金属粉末の製造方法 |
| KR100885698B1 (ko) * | 2007-08-17 | 2009-02-26 | 희성금속 주식회사 | 단상구조를 갖는 고온재료용 Ｒｕ계 금속간화합물의제조방법 |
| WO2010018815A1 (ja) * | 2008-08-11 | 2010-02-18 | 住友化学株式会社 | 半金属元素又は金属元素を主成分とする材料の精製方法 |
| CN104001926B (zh) * | 2014-04-12 | 2016-03-09 | 北京工业大学 | 四棱锥形、四棱凸台形金属微颗粒的制备方法 |
| CN104032270B (zh) * | 2014-06-12 | 2016-05-04 | 贵研铂业股份有限公司 | 一种大尺寸钌基合金溅射靶材及其制备方法 |
| CN104308185B (zh) * | 2014-10-14 | 2016-08-24 | 昆明贵金属研究所 | 一种用三氯化钌制备靶材用钌粉的方法 |
| CN115449764B (zh) * | 2022-09-14 | 2023-09-01 | 中国工程物理研究院材料研究所 | 一种锕系合金梯度膜及其制备方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08302462A (ja) * | 1995-05-09 | 1996-11-19 | Mitsubishi Materials Corp | Ｒｕスパッタリングターゲットおよびその製造方法 |
| JPH09227965A (ja) * | 1996-02-19 | 1997-09-02 | Mitsubishi Materials Corp | 精製金属ルテニウム粉末とその製造方法 |
| SG88758A1 (en) * | 1996-11-20 | 2002-05-21 | Toshiba Kk | Sputtering target and anti-ferromagnetic material film formed using thereof and magneto-resistance effect element formed by using the same |
| JP4058777B2 (ja) * | 1997-07-31 | 2008-03-12 | 日鉱金属株式会社 | 薄膜形成用高純度ルテニウム焼結体スパッタリングターゲット及び同ターゲットをスパッタリングすることによって形成される薄膜 |
| JP3436763B2 (ja) * | 1998-06-17 | 2003-08-18 | 田中貴金属工業株式会社 | スパッタリングターゲット材 |
| JP2000034563A (ja) * | 1998-07-14 | 2000-02-02 | Japan Energy Corp | 高純度ルテニウムスパッタリングターゲットの製造方法及び高純度ルテニウムスパッタリングターゲット |
| JP2000178721A (ja) | 1998-12-08 | 2000-06-27 | Mitsubishi Materials Corp | Ｒｕスパッタリングターゲット、並びにこのターゲットを製造するためのＲｕ原料粉末およびその製造方法 |
| JP2001020065A (ja) | 1999-07-07 | 2001-01-23 | Hitachi Metals Ltd | スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料 |
| JP2002105631A (ja) * | 2000-09-28 | 2002-04-10 | Sumitomo Metal Mining Co Ltd | 高純度ルテニウムスパッタリングターゲット及びその製造方法 |
| JP4503817B2 (ja) * | 2000-11-30 | 2010-07-14 | 株式会社東芝 | スパッタリングターゲットおよび薄膜 |
| JP2002180112A (ja) * | 2000-12-19 | 2002-06-26 | Hitachi Metals Ltd | 高融点金属粉末材料の製造方法 |
| JP3878432B2 (ja) * | 2001-04-27 | 2007-02-07 | 日鉱金属株式会社 | 高純度ルテニウムターゲット及び同ターゲットの製造方法 |
| JPWO2004001092A1 (ja) | 2002-06-24 | 2005-10-20 | 株式会社日鉱マテリアルズ | ＡｌＲｕスパッタリングターゲット及びその製造方法 |
| JP4544501B2 (ja) | 2002-08-06 | 2010-09-15 | 日鉱金属株式会社 | 導電性酸化物焼結体、同焼結体からなるスパッタリングターゲット及びこれらの製造方法 |
-
2005
- 2005-02-02 KR KR1020067019851A patent/KR100881851B1/ko not_active Expired - Lifetime
- 2005-02-02 JP JP2006510383A patent/JP4522991B2/ja not_active Expired - Lifetime
- 2005-02-02 EP EP05709609.1A patent/EP1724364B1/en not_active Expired - Lifetime
- 2005-02-02 CN CNB2005800067725A patent/CN100552068C/zh not_active Expired - Lifetime
- 2005-02-02 US US10/598,471 patent/US7578965B2/en not_active Expired - Lifetime
- 2005-02-02 WO PCT/JP2005/001488 patent/WO2005083136A1/ja not_active Ceased
- 2005-02-21 TW TW094105011A patent/TW200538563A/zh not_active IP Right Cessation
-
2009
- 2009-10-09 JP JP2009235296A patent/JP4907708B2/ja not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI579243B (zh) * | 2012-07-30 | 2017-04-21 | Jx Nippon Mining & Metals Corp | 釕燒結體濺鍍靶及釕合金燒結體濺鍍靶 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010047844A (ja) | 2010-03-04 |
| EP1724364B1 (en) | 2014-01-22 |
| JP4907708B2 (ja) | 2012-04-04 |
| US7578965B2 (en) | 2009-08-25 |
| KR100881851B1 (ko) | 2009-02-06 |
| KR20060120286A (ko) | 2006-11-24 |
| CN1926252A (zh) | 2007-03-07 |
| US20070240992A1 (en) | 2007-10-18 |
| JPWO2005083136A1 (ja) | 2008-04-24 |
| EP1724364A4 (en) | 2009-11-04 |
| EP1724364A1 (en) | 2006-11-22 |
| CN100552068C (zh) | 2009-10-21 |
| TWI303666B (enExample) | 2008-12-01 |
| WO2005083136A1 (ja) | 2005-09-09 |
| JP4522991B2 (ja) | 2010-08-11 |
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