TW200538563A - High-purity Ru powder, sputtering target obtained by sintering the same, thin film obtained by sputtering the target and process for producing high-purity Ru powder - Google Patents

High-purity Ru powder, sputtering target obtained by sintering the same, thin film obtained by sputtering the target and process for producing high-purity Ru powder Download PDF

Info

Publication number
TW200538563A
TW200538563A TW094105011A TW94105011A TW200538563A TW 200538563 A TW200538563 A TW 200538563A TW 094105011 A TW094105011 A TW 094105011A TW 94105011 A TW94105011 A TW 94105011A TW 200538563 A TW200538563 A TW 200538563A
Authority
TW
Taiwan
Prior art keywords
purity
powder
less
content
patent application
Prior art date
Application number
TW094105011A
Other languages
English (en)
Chinese (zh)
Other versions
TWI303666B (cg-RX-API-DMAC10.html
Inventor
Yuichiro Shindo
Akira Hisano
Original Assignee
Nikko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikko Materials Co Ltd filed Critical Nikko Materials Co Ltd
Publication of TW200538563A publication Critical patent/TW200538563A/zh
Application granted granted Critical
Publication of TWI303666B publication Critical patent/TWI303666B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F5/00Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/04Alloys based on a platinum group metal
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25CPROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
    • C25C5/00Electrolytic production, recovery or refining of metal powders or porous metal masses
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25CPROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
    • C25C5/00Electrolytic production, recovery or refining of metal powders or porous metal masses
    • C25C5/02Electrolytic production, recovery or refining of metal powders or porous metal masses from solutions
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10Processes characterised by the sequence of their steps
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00Technologies related to metal processing
    • Y02P10/10Reduction of greenhouse gas [GHG] emissions
    • Y02P10/134Reduction of greenhouse gas [GHG] emissions by avoiding CO2, e.g. using hydrogen

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacture And Refinement Of Metals (AREA)
TW094105011A 2004-03-01 2005-02-21 High-purity Ru powder, sputtering target obtained by sintering the same, thin film obtained by sputtering the target and process for producing high-purity Ru powder TW200538563A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004056022 2004-03-01

Publications (2)

Publication Number Publication Date
TW200538563A true TW200538563A (en) 2005-12-01
TWI303666B TWI303666B (cg-RX-API-DMAC10.html) 2008-12-01

Family

ID=34908891

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094105011A TW200538563A (en) 2004-03-01 2005-02-21 High-purity Ru powder, sputtering target obtained by sintering the same, thin film obtained by sputtering the target and process for producing high-purity Ru powder

Country Status (7)

Country Link
US (1) US7578965B2 (cg-RX-API-DMAC10.html)
EP (1) EP1724364B1 (cg-RX-API-DMAC10.html)
JP (2) JP4522991B2 (cg-RX-API-DMAC10.html)
KR (1) KR100881851B1 (cg-RX-API-DMAC10.html)
CN (1) CN100552068C (cg-RX-API-DMAC10.html)
TW (1) TW200538563A (cg-RX-API-DMAC10.html)
WO (1) WO2005083136A1 (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI579243B (zh) * 2012-07-30 2017-04-21 Jx日鑛日石金屬股份有限公司 釕燒結體濺鍍靶及釕合金燒結體濺鍍靶

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004001092A1 (ja) * 2002-06-24 2003-12-31 Nikko Materials Company, Limited AlRuスパッタリングターゲット及びその製造方法
US9732413B2 (en) * 2005-06-16 2017-08-15 Jx Nippon Mining & Metals Corporation Ruthenium-alloy sputtering target
JP4800317B2 (ja) * 2005-10-14 2011-10-26 Jx日鉱日石金属株式会社 高純度Ru合金ターゲット及びその製造方法並びにスパッタ膜
US8118984B2 (en) * 2006-02-22 2012-02-21 Jx Nippon Mining & Metals Corporation Sintered sputtering target made of refractory metals
JP4527743B2 (ja) * 2007-03-09 2010-08-18 アサヒプリテック株式会社 ルテニウム金属粉末の製造方法
KR100885698B1 (ko) * 2007-08-17 2009-02-26 희성금속 주식회사 단상구조를 갖는 고온재료용 Ru계 금속간화합물의제조방법
US20110167961A1 (en) * 2008-08-11 2011-07-14 Sumitomo Chemical Company, Limited Method for purifying material containing metalloid element or metal element as main component
CN104001926B (zh) * 2014-04-12 2016-03-09 北京工业大学 四棱锥形、四棱凸台形金属微颗粒的制备方法
CN104032270B (zh) * 2014-06-12 2016-05-04 贵研铂业股份有限公司 一种大尺寸钌基合金溅射靶材及其制备方法
CN104308185B (zh) * 2014-10-14 2016-08-24 昆明贵金属研究所 一种用三氯化钌制备靶材用钌粉的方法
CN115449764B (zh) * 2022-09-14 2023-09-01 中国工程物理研究院材料研究所 一种锕系合金梯度膜及其制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08302462A (ja) * 1995-05-09 1996-11-19 Mitsubishi Materials Corp Ruスパッタリングターゲットおよびその製造方法
JPH09227965A (ja) * 1996-02-19 1997-09-02 Mitsubishi Materials Corp 精製金属ルテニウム粉末とその製造方法
CN100336934C (zh) * 1996-11-20 2007-09-12 株式会社东芝 抗铁磁材料膜和包括其的磁阻效应器件
JP4058777B2 (ja) * 1997-07-31 2008-03-12 日鉱金属株式会社 薄膜形成用高純度ルテニウム焼結体スパッタリングターゲット及び同ターゲットをスパッタリングすることによって形成される薄膜
WO1999066099A1 (en) * 1998-06-17 1999-12-23 Tanaka Kikinzoku Kogyo K.K. Target material for spattering
JP2000034563A (ja) * 1998-07-14 2000-02-02 Japan Energy Corp 高純度ルテニウムスパッタリングターゲットの製造方法及び高純度ルテニウムスパッタリングターゲット
JP2000178721A (ja) * 1998-12-08 2000-06-27 Mitsubishi Materials Corp Ruスパッタリングターゲット、並びにこのターゲットを製造するためのRu原料粉末およびその製造方法
JP2001020065A (ja) * 1999-07-07 2001-01-23 Hitachi Metals Ltd スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料
JP2002105631A (ja) * 2000-09-28 2002-04-10 Sumitomo Metal Mining Co Ltd 高純度ルテニウムスパッタリングターゲット及びその製造方法
JP4503817B2 (ja) * 2000-11-30 2010-07-14 株式会社東芝 スパッタリングターゲットおよび薄膜
JP2002180112A (ja) * 2000-12-19 2002-06-26 Hitachi Metals Ltd 高融点金属粉末材料の製造方法
JP3878432B2 (ja) * 2001-04-27 2007-02-07 日鉱金属株式会社 高純度ルテニウムターゲット及び同ターゲットの製造方法
WO2004001092A1 (ja) * 2002-06-24 2003-12-31 Nikko Materials Company, Limited AlRuスパッタリングターゲット及びその製造方法
JP4544501B2 (ja) * 2002-08-06 2010-09-15 日鉱金属株式会社 導電性酸化物焼結体、同焼結体からなるスパッタリングターゲット及びこれらの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI579243B (zh) * 2012-07-30 2017-04-21 Jx日鑛日石金屬股份有限公司 釕燒結體濺鍍靶及釕合金燒結體濺鍍靶

Also Published As

Publication number Publication date
KR100881851B1 (ko) 2009-02-06
JP2010047844A (ja) 2010-03-04
KR20060120286A (ko) 2006-11-24
JP4907708B2 (ja) 2012-04-04
EP1724364A4 (en) 2009-11-04
CN100552068C (zh) 2009-10-21
US20070240992A1 (en) 2007-10-18
EP1724364A1 (en) 2006-11-22
JPWO2005083136A1 (ja) 2008-04-24
EP1724364B1 (en) 2014-01-22
TWI303666B (cg-RX-API-DMAC10.html) 2008-12-01
US7578965B2 (en) 2009-08-25
JP4522991B2 (ja) 2010-08-11
WO2005083136A1 (ja) 2005-09-09
CN1926252A (zh) 2007-03-07

Similar Documents

Publication Publication Date Title
Wang et al. Chemical short-range ordering and its strengthening effect in refractory high-entropy alloys
JP4907708B2 (ja) 高純度Ru粉末、該高純度Ru粉末を焼結して得るスパッタリングターゲット及び該ターゲットをスパッタリングして得た薄膜並びに高純度Ru粉末の製造方法
US10943773B2 (en) Ruthenium sputtering target and ruthenium alloy sputtering target
CN103894601B (zh) 一种改善了耐电压性能的高压钽粉末的制备方法
CN104508176A (zh) 钨烧结体溅射靶和使用该靶形成的钨膜
TW574377B (en) Sintered tungsten target for sputtering and method for preparation thereof
EP3124647B1 (en) Sputtering target comprising al-te-cu-zr alloy, and method for producing same
WO2002051769A1 (en) Oxide sinter and process for producing the same
Bryskin Rhenium and its alloys
CN101967596A (zh) 制备高性能的具有NaZn13结构稀土-铁钴硅化合物的方法
US20080229880A1 (en) Production of high-purity tantalum flake powder
Farooq Khan et al. Corrosion behavior and hardness of binary Mg alloys produced via high-energy ball-milling and subsequent spark plasma sintering
US20080233420A1 (en) Production of high-purity tantalum flake powder
CN101287858B (zh) 高纯度Ru合金靶及其制造方法以及溅射膜
CN116200696B (zh) 一种多孔合金涂层电极及其制备方法和应用
CN118854336B (zh) 一种具有多孔网状结构的二硼化钨自支撑电极及其制备方法和应用
Aras et al. Chemical Behavior of Mo2 TM B2 (TM= Fe, Co, Ni) upon the Oxygen Evolution Reaction (OER)
CN120425220A (zh) 一种用于渗氢的高熵合金材料及其制备方法
CN115786927A (zh) 一种含碳钽铌合金中碳化物的提取方法
CN116213746A (zh) 一种棒状超细银粉及其制备方法和应用
WO2025017013A1 (en) Electrode, electrolyzer, production method and use of electrode
JP2002246256A (ja) 導電性ペースト及びそれを用いた積層コンデンサ
CN103878364A (zh) 一种改善了耐电压性能的中压钽粉的制备方法
CN107083560A (zh) 一种超高硬度难熔金属纳米晶镀层及其制备方法
CN110088314A (zh) 用于镍/金属氢化物碱性电池负极的活性材料

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent