TW200525793A - Method for the application of active materials onto active surfaces and devices made with such methods - Google Patents

Method for the application of active materials onto active surfaces and devices made with such methods Download PDF

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Publication number
TW200525793A
TW200525793A TW093128654A TW93128654A TW200525793A TW 200525793 A TW200525793 A TW 200525793A TW 093128654 A TW093128654 A TW 093128654A TW 93128654 A TW93128654 A TW 93128654A TW 200525793 A TW200525793 A TW 200525793A
Authority
TW
Taiwan
Prior art keywords
active
fluorinated
layer
group
liquid
Prior art date
Application number
TW093128654A
Other languages
English (en)
Chinese (zh)
Inventor
Viacheslav A Petrov
Daniel David Lecloux
Original Assignee
Du Pont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont filed Critical Du Pont
Publication of TW200525793A publication Critical patent/TW200525793A/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/311Phthalocyanine
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/321Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/0198Manufacture or treatment batch processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
TW093128654A 2003-09-24 2004-09-22 Method for the application of active materials onto active surfaces and devices made with such methods TW200525793A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/669,403 US7686978B2 (en) 2003-09-24 2003-09-24 Method for the application of active materials onto active surfaces and devices made with such methods

Publications (1)

Publication Number Publication Date
TW200525793A true TW200525793A (en) 2005-08-01

Family

ID=34313707

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093128654A TW200525793A (en) 2003-09-24 2004-09-22 Method for the application of active materials onto active surfaces and devices made with such methods

Country Status (5)

Country Link
US (3) US7686978B2 (https=)
JP (3) JP5339678B2 (https=)
KR (1) KR101176678B1 (https=)
TW (1) TW200525793A (https=)
WO (1) WO2005031889A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI643251B (zh) * 2016-01-28 2018-12-01 Tokyo Electron Limited 金屬氧化物之旋塗式沉積方法

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7686978B2 (en) * 2003-09-24 2010-03-30 E. I. Du Pont De Nemours And Company Method for the application of active materials onto active surfaces and devices made with such methods
US7709050B2 (en) * 2004-08-02 2010-05-04 Hewlett-Packard Development Company, L.P. Surface treatment for OLED material
JP4876415B2 (ja) * 2005-03-29 2012-02-15 セイコーエプソン株式会社 有機el装置の製造方法、デバイスの製造方法
US8563331B2 (en) * 2005-06-03 2013-10-22 E. I. Du Pont De Nemours And Company Process for fabricating and repairing an electronic device
US20070170401A1 (en) * 2005-12-28 2007-07-26 Che-Hsiung Hsu Cationic compositions of electrically conducting polymers doped with fully-fluorinated acid polymers
DE102006021410B4 (de) * 2006-05-09 2009-07-16 Leonhard Kurz Gmbh & Co. Kg Verfahren zur Herstellung eines Mehrschichtgebildes und Verwendung des Verfahrens
US20080087882A1 (en) * 2006-06-05 2008-04-17 Lecloux Daniel D Process for making contained layers and devices made with same
WO2007145977A1 (en) * 2006-06-05 2007-12-21 E. I. Du Pont De Nemours And Company Process for making an organic electronic device
US20080020669A1 (en) * 2006-06-05 2008-01-24 Feehery William F Process for making an organic light-emitting diode
JP2009076779A (ja) * 2007-09-21 2009-04-09 Casio Comput Co Ltd 有機el素子およびその製造方法
KR20100094475A (ko) * 2007-10-26 2010-08-26 이 아이 듀폰 디 네모아 앤드 캄파니 격납된 층을 제조하기 위한 방법 및 재료, 및 이를 사용하여 제조된 소자
EP2109163A1 (de) * 2008-04-08 2009-10-14 Alcan Technology & Management Ltd. Substrat mit aufgedruckter Struktur
US8759818B2 (en) 2009-02-27 2014-06-24 E I Du Pont De Nemours And Company Deuterated compounds for electronic applications
US8592239B2 (en) * 2009-07-27 2013-11-26 E I Du Pont De Nemours And Company Process and materials for making contained layers and devices made with same
KR101790854B1 (ko) 2009-09-29 2017-10-26 이 아이 듀폰 디 네모아 앤드 캄파니 발광 응용을 위한 중수소화된 화합물
US20110101312A1 (en) 2009-10-29 2011-05-05 E. I. Du Pont De Nemours And Company Deuterated compounds for electronic applications
FR2965089B1 (fr) * 2010-09-20 2016-04-29 Philippe Foucqueteau Dispositif pour simuler un geste medical
JP5727038B2 (ja) 2010-12-20 2015-06-03 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーE.I.Du Pont De Nemours And Company 電子技術応用のための組成物
JP2012212704A (ja) * 2011-03-30 2012-11-01 Sumitomo Chemical Co Ltd 液状組成物及びそれを用いた積層膜の製造方法
BR112015020725A2 (pt) 2013-03-11 2017-07-18 Saudi Basic Ind Corp ariloxi-ftalocianinas de metais do grupo iv
US8933238B2 (en) 2013-03-11 2015-01-13 Saudi Basic Industries Corporation Aryloxy-phthalocyanines of group III metals
US20220025240A1 (en) * 2018-12-20 2022-01-27 Solvay Specialty Polymers Italy S.P.A. Method of manufacturing semiconductor devices using a heat transfer fluid comprising fluorinated compounds having a low gwp

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2994664A (en) * 1958-02-19 1961-08-01 Nalco Chemical Co Dry acid cleaning compositions
US2947703A (en) * 1958-07-16 1960-08-02 Nalco Chemical Co Process of inhibiting corrosion of ferrous metals in contact with aqueous solutions of acids
US3282875A (en) 1964-07-22 1966-11-01 Du Pont Fluorocarbon vinyl ether polymers
US3343976A (en) * 1964-05-07 1967-09-26 North American Aviation Inc Surface preparation for fluorinated plastics
US3438907A (en) * 1965-07-26 1969-04-15 Wyandotte Chemicals Corp Iodine-containing nonionic surfactant compositions
DE2029556A1 (de) 1970-06-16 1971-12-23 Farbwerke Hoechst AG, vormals Meister Lucius & Brumng, 6000 Frankfurt Verfahren zur Herstellung von Aryl 1,1,2,2 tetrafluorathylathern
US3783499A (en) * 1972-01-24 1974-01-08 Bell Telephone Labor Inc Semiconductor device fabrication using magnetic carrier
US4358545A (en) 1980-06-11 1982-11-09 The Dow Chemical Company Sulfonic acid electrolytic cell having flourinated polymer membrane with hydration product less than 22,000
US4470920A (en) * 1981-05-11 1984-09-11 Custom Research And Development Metal oxide remover for stainless steels
US4802967A (en) 1987-04-08 1989-02-07 Andus Corporation Surface treatment of polymers
DE3714043A1 (de) * 1987-04-28 1988-11-17 Merck Patent Gmbh Elektrooptisches fluessigkristallanzeigeelement
US4940525A (en) 1987-05-08 1990-07-10 The Dow Chemical Company Low equivalent weight sulfonic fluoropolymers
US4973391A (en) * 1988-08-30 1990-11-27 Osaka Gas Company, Ltd. Composite polymers of polyaniline with metal phthalocyanine and polyaniline with organic sulfonic acid and nafion
GB8909011D0 (en) * 1989-04-20 1989-06-07 Friend Richard H Electroluminescent devices
US5271867A (en) * 1989-08-23 1993-12-21 Sharp Kabushiki Kaisha Liquid crystal composition and liquid crystal device containing the same
US5098618A (en) * 1990-03-14 1992-03-24 Joseph Zelez Surface modification of plastic substrates
US5179188A (en) * 1990-04-17 1993-01-12 Raychem Corporation Crosslinkable fluorinated aromatic ether composition
US5730922A (en) * 1990-12-10 1998-03-24 The Dow Chemical Company Resin transfer molding process for composites
DE4221152C1 (de) * 1992-06-27 1993-11-18 Merck Patent Gmbh Verfahren zur Herstellung von 4-Brom-2,6-difluortrifluormethoxybenzol und 2,6-Difluor-3-nitrotrifluormethoxybenzol
JPH06293691A (ja) * 1993-02-12 1994-10-21 Kanto Denka Kogyo Co Ltd 高度弗素化フェニルプロピルエーテル及びその製造法
US5431850A (en) * 1993-08-09 1995-07-11 Merck Patent Gensellschaft Mit Beschrankter Haftung Nematic liquid-crystal composition for active matrix application
US5380644A (en) 1993-08-10 1995-01-10 Minnesota Mining And Manufacturing Company Additive for the reduction of mottle in photothermographic and thermographic elements
JP2846571B2 (ja) * 1994-02-25 1999-01-13 出光興産株式会社 有機エレクトロルミネッセンス素子
ATE247149T1 (de) * 1996-05-15 2003-08-15 Kaneka Corp Härtbare zusammensetzung, durch verwendung davon hergestellter schaum und verfahren zur herstellung
US6046348A (en) * 1996-07-17 2000-04-04 Fuji Xerox Co., Ltd. Silane compound, method for making the same, and electrophotographic photoreceptor
DE69835366T2 (de) 1997-03-31 2007-07-19 Daikin Industries, Ltd. Verfahren zur herstellung von perfluorvinylethersulfonsäure-derivaten
JP3743630B2 (ja) * 1998-03-17 2006-02-08 セイコーエプソン株式会社 薄膜発光素子の製造方法
KR100660384B1 (ko) * 1998-03-17 2006-12-21 세이코 엡슨 가부시키가이샤 표시장치의 제조방법
KR100869622B1 (ko) * 1998-12-28 2008-11-21 이데미쓰 고산 가부시키가이샤 유기 전기발광 소자용 재료 및 이를 포함하는 유기전기발광 소자
JP2001081394A (ja) * 1999-09-14 2001-03-27 Titan Kogyo Kk プライマー組成物及び光触媒体
HK1054816B (zh) * 1999-12-21 2006-09-29 弗莱克因艾伯勒有限公司 溶液加工
US6821645B2 (en) 1999-12-27 2004-11-23 Fuji Photo Film Co., Ltd. Light-emitting material comprising orthometalated iridium complex, light-emitting device, high efficiency red light-emitting device, and novel iridium complex
US6955772B2 (en) * 2001-03-29 2005-10-18 Agfa-Gevaert Aqueous composition containing a polymer or copolymer of a 3,4-dialkoxythiophene and a non-newtonian binder
US20020121638A1 (en) 2000-06-30 2002-09-05 Vladimir Grushin Electroluminescent iridium compounds with fluorinated phenylpyridines, phenylpyrimidines, and phenylquinolines and devices made with such compounds
JP5241053B2 (ja) 2000-08-11 2013-07-17 ザ、トラスティーズ オブ プリンストン ユニバーシティ 有機金属化合物及び放射移行有機電気燐光体
JP4154139B2 (ja) 2000-09-26 2008-09-24 キヤノン株式会社 発光素子
JP4154140B2 (ja) 2000-09-26 2008-09-24 キヤノン株式会社 金属配位化合物
WO2002072714A1 (de) * 2001-03-10 2002-09-19 Covion Organic Semiconductors Gmbh Lösung und dispersionen organischer halbleiter
JP2002280177A (ja) * 2001-03-15 2002-09-27 Toshiba Corp 有機el素子および表示装置
JP2003080694A (ja) * 2001-06-26 2003-03-19 Seiko Epson Corp 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、並びに非接触型カード媒体
JP2003041192A (ja) * 2001-07-27 2003-02-13 Dainippon Toryo Co Ltd 転写方法及び転写用被覆剤
DE10141624A1 (de) * 2001-08-24 2003-03-06 Covion Organic Semiconductors Lösungen polymerer Halbleiter
US6652661B2 (en) * 2001-10-12 2003-11-25 Bobolink, Inc. Radioactive decontamination and translocation method
US6955773B2 (en) 2002-02-28 2005-10-18 E.I. Du Pont De Nemours And Company Polymer buffer layers and their use in light-emitting diodes
CA2499364A1 (en) 2002-09-24 2004-04-08 E. I. Du Pont De Nemours And Company Water dispersible polyanilines made with polymeric acid colloids for electronics applications
WO2004029128A2 (en) 2002-09-24 2004-04-08 E.I. Du Pont De Nemours And Company Water dispersible polythiophenes made with polymeric acid colloids
US6916902B2 (en) 2002-12-19 2005-07-12 Dow Global Technologies Inc. Tricyclic arylamine containing polymers and electronic devices therefrom
US7390438B2 (en) * 2003-04-22 2008-06-24 E.I. Du Pont De Nemours And Company Water dispersible substituted polydioxythiophenes made with fluorinated polymeric sulfonic acid colloids
US7531700B2 (en) * 2003-09-24 2009-05-12 E.I. Du Pont De Nemours And Company Fluorinated arylethers and methods for use thereof
US7686978B2 (en) * 2003-09-24 2010-03-30 E. I. Du Pont De Nemours And Company Method for the application of active materials onto active surfaces and devices made with such methods

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI643251B (zh) * 2016-01-28 2018-12-01 Tokyo Electron Limited 金屬氧化物之旋塗式沉積方法

Also Published As

Publication number Publication date
JP2007506547A (ja) 2007-03-22
JP5757989B2 (ja) 2015-08-05
JP2012157859A (ja) 2012-08-23
KR20070029625A (ko) 2007-03-14
US8287766B2 (en) 2012-10-16
KR101176678B1 (ko) 2012-08-23
US20110180761A1 (en) 2011-07-28
WO2005031889A3 (en) 2005-06-23
WO2005031889A2 (en) 2005-04-07
US7686978B2 (en) 2010-03-30
US20050062021A1 (en) 2005-03-24
JP5339678B2 (ja) 2013-11-13
JP5602173B2 (ja) 2014-10-08
US8465850B2 (en) 2013-06-18
US20050269550A1 (en) 2005-12-08
JP2014090195A (ja) 2014-05-15

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