KR101176678B1 - 활성층을 활성표면 상에 형성하는 방법, 활성물질을 표면 상에 침착시키기 위한 조성물 및 이로부터 제조된 유기 전자소자 - Google Patents

활성층을 활성표면 상에 형성하는 방법, 활성물질을 표면 상에 침착시키기 위한 조성물 및 이로부터 제조된 유기 전자소자 Download PDF

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KR101176678B1
KR101176678B1 KR1020067005767A KR20067005767A KR101176678B1 KR 101176678 B1 KR101176678 B1 KR 101176678B1 KR 1020067005767 A KR1020067005767 A KR 1020067005767A KR 20067005767 A KR20067005767 A KR 20067005767A KR 101176678 B1 KR101176678 B1 KR 101176678B1
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active
fluorinated
layer
active material
formula
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Korean (ko)
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KR20070029625A (ko
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비아체슬라브 알렉산드로비치 페트로브
다니엘 데이비드 레크룩스
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이 아이 듀폰 디 네모아 앤드 캄파니
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/311Phthalocyanine
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/321Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/0198Manufacture or treatment batch processes

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
KR1020067005767A 2003-09-24 2004-09-22 활성층을 활성표면 상에 형성하는 방법, 활성물질을 표면 상에 침착시키기 위한 조성물 및 이로부터 제조된 유기 전자소자 Expired - Fee Related KR101176678B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/669,403 2003-09-24
US10/669,403 US7686978B2 (en) 2003-09-24 2003-09-24 Method for the application of active materials onto active surfaces and devices made with such methods
PCT/US2004/031246 WO2005031889A2 (en) 2003-09-24 2004-09-22 Method for the application of active materials onto active surfaces and devices made with such methods

Publications (2)

Publication Number Publication Date
KR20070029625A KR20070029625A (ko) 2007-03-14
KR101176678B1 true KR101176678B1 (ko) 2012-08-23

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KR1020067005767A Expired - Fee Related KR101176678B1 (ko) 2003-09-24 2004-09-22 활성층을 활성표면 상에 형성하는 방법, 활성물질을 표면 상에 침착시키기 위한 조성물 및 이로부터 제조된 유기 전자소자

Country Status (5)

Country Link
US (3) US7686978B2 (https=)
JP (3) JP5339678B2 (https=)
KR (1) KR101176678B1 (https=)
TW (1) TW200525793A (https=)
WO (1) WO2005031889A2 (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7686978B2 (en) * 2003-09-24 2010-03-30 E. I. Du Pont De Nemours And Company Method for the application of active materials onto active surfaces and devices made with such methods
US7709050B2 (en) * 2004-08-02 2010-05-04 Hewlett-Packard Development Company, L.P. Surface treatment for OLED material
JP4876415B2 (ja) * 2005-03-29 2012-02-15 セイコーエプソン株式会社 有機el装置の製造方法、デバイスの製造方法
US8563331B2 (en) * 2005-06-03 2013-10-22 E. I. Du Pont De Nemours And Company Process for fabricating and repairing an electronic device
US20070170401A1 (en) * 2005-12-28 2007-07-26 Che-Hsiung Hsu Cationic compositions of electrically conducting polymers doped with fully-fluorinated acid polymers
DE102006021410B4 (de) * 2006-05-09 2009-07-16 Leonhard Kurz Gmbh & Co. Kg Verfahren zur Herstellung eines Mehrschichtgebildes und Verwendung des Verfahrens
US20080087882A1 (en) * 2006-06-05 2008-04-17 Lecloux Daniel D Process for making contained layers and devices made with same
WO2007145977A1 (en) * 2006-06-05 2007-12-21 E. I. Du Pont De Nemours And Company Process for making an organic electronic device
US20080020669A1 (en) * 2006-06-05 2008-01-24 Feehery William F Process for making an organic light-emitting diode
JP2009076779A (ja) * 2007-09-21 2009-04-09 Casio Comput Co Ltd 有機el素子およびその製造方法
KR20100094475A (ko) * 2007-10-26 2010-08-26 이 아이 듀폰 디 네모아 앤드 캄파니 격납된 층을 제조하기 위한 방법 및 재료, 및 이를 사용하여 제조된 소자
EP2109163A1 (de) * 2008-04-08 2009-10-14 Alcan Technology & Management Ltd. Substrat mit aufgedruckter Struktur
US8759818B2 (en) 2009-02-27 2014-06-24 E I Du Pont De Nemours And Company Deuterated compounds for electronic applications
US8592239B2 (en) * 2009-07-27 2013-11-26 E I Du Pont De Nemours And Company Process and materials for making contained layers and devices made with same
KR101790854B1 (ko) 2009-09-29 2017-10-26 이 아이 듀폰 디 네모아 앤드 캄파니 발광 응용을 위한 중수소화된 화합물
US20110101312A1 (en) 2009-10-29 2011-05-05 E. I. Du Pont De Nemours And Company Deuterated compounds for electronic applications
FR2965089B1 (fr) * 2010-09-20 2016-04-29 Philippe Foucqueteau Dispositif pour simuler un geste medical
JP5727038B2 (ja) 2010-12-20 2015-06-03 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーE.I.Du Pont De Nemours And Company 電子技術応用のための組成物
JP2012212704A (ja) * 2011-03-30 2012-11-01 Sumitomo Chemical Co Ltd 液状組成物及びそれを用いた積層膜の製造方法
BR112015020725A2 (pt) 2013-03-11 2017-07-18 Saudi Basic Ind Corp ariloxi-ftalocianinas de metais do grupo iv
US8933238B2 (en) 2013-03-11 2015-01-13 Saudi Basic Industries Corporation Aryloxy-phthalocyanines of group III metals
WO2017132351A1 (en) * 2016-01-28 2017-08-03 Tokyo Electron Limited Methods of spin-on deposition of metal oxides
US20220025240A1 (en) * 2018-12-20 2022-01-27 Solvay Specialty Polymers Italy S.P.A. Method of manufacturing semiconductor devices using a heat transfer fluid comprising fluorinated compounds having a low gwp

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001081394A (ja) * 1999-09-14 2001-03-27 Titan Kogyo Kk プライマー組成物及び光触媒体
JP2003041192A (ja) * 2001-07-27 2003-02-13 Dainippon Toryo Co Ltd 転写方法及び転写用被覆剤
JP2003080694A (ja) * 2001-06-26 2003-03-19 Seiko Epson Corp 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、並びに非接触型カード媒体

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2994664A (en) * 1958-02-19 1961-08-01 Nalco Chemical Co Dry acid cleaning compositions
US2947703A (en) * 1958-07-16 1960-08-02 Nalco Chemical Co Process of inhibiting corrosion of ferrous metals in contact with aqueous solutions of acids
US3282875A (en) 1964-07-22 1966-11-01 Du Pont Fluorocarbon vinyl ether polymers
US3343976A (en) * 1964-05-07 1967-09-26 North American Aviation Inc Surface preparation for fluorinated plastics
US3438907A (en) * 1965-07-26 1969-04-15 Wyandotte Chemicals Corp Iodine-containing nonionic surfactant compositions
DE2029556A1 (de) 1970-06-16 1971-12-23 Farbwerke Hoechst AG, vormals Meister Lucius & Brumng, 6000 Frankfurt Verfahren zur Herstellung von Aryl 1,1,2,2 tetrafluorathylathern
US3783499A (en) * 1972-01-24 1974-01-08 Bell Telephone Labor Inc Semiconductor device fabrication using magnetic carrier
US4358545A (en) 1980-06-11 1982-11-09 The Dow Chemical Company Sulfonic acid electrolytic cell having flourinated polymer membrane with hydration product less than 22,000
US4470920A (en) * 1981-05-11 1984-09-11 Custom Research And Development Metal oxide remover for stainless steels
US4802967A (en) 1987-04-08 1989-02-07 Andus Corporation Surface treatment of polymers
DE3714043A1 (de) * 1987-04-28 1988-11-17 Merck Patent Gmbh Elektrooptisches fluessigkristallanzeigeelement
US4940525A (en) 1987-05-08 1990-07-10 The Dow Chemical Company Low equivalent weight sulfonic fluoropolymers
US4973391A (en) * 1988-08-30 1990-11-27 Osaka Gas Company, Ltd. Composite polymers of polyaniline with metal phthalocyanine and polyaniline with organic sulfonic acid and nafion
GB8909011D0 (en) * 1989-04-20 1989-06-07 Friend Richard H Electroluminescent devices
US5271867A (en) * 1989-08-23 1993-12-21 Sharp Kabushiki Kaisha Liquid crystal composition and liquid crystal device containing the same
US5098618A (en) * 1990-03-14 1992-03-24 Joseph Zelez Surface modification of plastic substrates
US5179188A (en) * 1990-04-17 1993-01-12 Raychem Corporation Crosslinkable fluorinated aromatic ether composition
US5730922A (en) * 1990-12-10 1998-03-24 The Dow Chemical Company Resin transfer molding process for composites
DE4221152C1 (de) * 1992-06-27 1993-11-18 Merck Patent Gmbh Verfahren zur Herstellung von 4-Brom-2,6-difluortrifluormethoxybenzol und 2,6-Difluor-3-nitrotrifluormethoxybenzol
JPH06293691A (ja) * 1993-02-12 1994-10-21 Kanto Denka Kogyo Co Ltd 高度弗素化フェニルプロピルエーテル及びその製造法
US5431850A (en) * 1993-08-09 1995-07-11 Merck Patent Gensellschaft Mit Beschrankter Haftung Nematic liquid-crystal composition for active matrix application
US5380644A (en) 1993-08-10 1995-01-10 Minnesota Mining And Manufacturing Company Additive for the reduction of mottle in photothermographic and thermographic elements
JP2846571B2 (ja) * 1994-02-25 1999-01-13 出光興産株式会社 有機エレクトロルミネッセンス素子
ATE247149T1 (de) * 1996-05-15 2003-08-15 Kaneka Corp Härtbare zusammensetzung, durch verwendung davon hergestellter schaum und verfahren zur herstellung
US6046348A (en) * 1996-07-17 2000-04-04 Fuji Xerox Co., Ltd. Silane compound, method for making the same, and electrophotographic photoreceptor
DE69835366T2 (de) 1997-03-31 2007-07-19 Daikin Industries, Ltd. Verfahren zur herstellung von perfluorvinylethersulfonsäure-derivaten
JP3743630B2 (ja) * 1998-03-17 2006-02-08 セイコーエプソン株式会社 薄膜発光素子の製造方法
KR100660384B1 (ko) * 1998-03-17 2006-12-21 세이코 엡슨 가부시키가이샤 표시장치의 제조방법
KR100869622B1 (ko) * 1998-12-28 2008-11-21 이데미쓰 고산 가부시키가이샤 유기 전기발광 소자용 재료 및 이를 포함하는 유기전기발광 소자
HK1054816B (zh) * 1999-12-21 2006-09-29 弗莱克因艾伯勒有限公司 溶液加工
US6821645B2 (en) 1999-12-27 2004-11-23 Fuji Photo Film Co., Ltd. Light-emitting material comprising orthometalated iridium complex, light-emitting device, high efficiency red light-emitting device, and novel iridium complex
US6955772B2 (en) * 2001-03-29 2005-10-18 Agfa-Gevaert Aqueous composition containing a polymer or copolymer of a 3,4-dialkoxythiophene and a non-newtonian binder
US20020121638A1 (en) 2000-06-30 2002-09-05 Vladimir Grushin Electroluminescent iridium compounds with fluorinated phenylpyridines, phenylpyrimidines, and phenylquinolines and devices made with such compounds
JP5241053B2 (ja) 2000-08-11 2013-07-17 ザ、トラスティーズ オブ プリンストン ユニバーシティ 有機金属化合物及び放射移行有機電気燐光体
JP4154139B2 (ja) 2000-09-26 2008-09-24 キヤノン株式会社 発光素子
JP4154140B2 (ja) 2000-09-26 2008-09-24 キヤノン株式会社 金属配位化合物
WO2002072714A1 (de) * 2001-03-10 2002-09-19 Covion Organic Semiconductors Gmbh Lösung und dispersionen organischer halbleiter
JP2002280177A (ja) * 2001-03-15 2002-09-27 Toshiba Corp 有機el素子および表示装置
DE10141624A1 (de) * 2001-08-24 2003-03-06 Covion Organic Semiconductors Lösungen polymerer Halbleiter
US6652661B2 (en) * 2001-10-12 2003-11-25 Bobolink, Inc. Radioactive decontamination and translocation method
US6955773B2 (en) 2002-02-28 2005-10-18 E.I. Du Pont De Nemours And Company Polymer buffer layers and their use in light-emitting diodes
CA2499364A1 (en) 2002-09-24 2004-04-08 E. I. Du Pont De Nemours And Company Water dispersible polyanilines made with polymeric acid colloids for electronics applications
WO2004029128A2 (en) 2002-09-24 2004-04-08 E.I. Du Pont De Nemours And Company Water dispersible polythiophenes made with polymeric acid colloids
US6916902B2 (en) 2002-12-19 2005-07-12 Dow Global Technologies Inc. Tricyclic arylamine containing polymers and electronic devices therefrom
US7390438B2 (en) * 2003-04-22 2008-06-24 E.I. Du Pont De Nemours And Company Water dispersible substituted polydioxythiophenes made with fluorinated polymeric sulfonic acid colloids
US7531700B2 (en) * 2003-09-24 2009-05-12 E.I. Du Pont De Nemours And Company Fluorinated arylethers and methods for use thereof
US7686978B2 (en) * 2003-09-24 2010-03-30 E. I. Du Pont De Nemours And Company Method for the application of active materials onto active surfaces and devices made with such methods

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001081394A (ja) * 1999-09-14 2001-03-27 Titan Kogyo Kk プライマー組成物及び光触媒体
JP2003080694A (ja) * 2001-06-26 2003-03-19 Seiko Epson Corp 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、並びに非接触型カード媒体
JP2003041192A (ja) * 2001-07-27 2003-02-13 Dainippon Toryo Co Ltd 転写方法及び転写用被覆剤

Also Published As

Publication number Publication date
JP2007506547A (ja) 2007-03-22
JP5757989B2 (ja) 2015-08-05
JP2012157859A (ja) 2012-08-23
KR20070029625A (ko) 2007-03-14
US8287766B2 (en) 2012-10-16
US20110180761A1 (en) 2011-07-28
WO2005031889A3 (en) 2005-06-23
WO2005031889A2 (en) 2005-04-07
US7686978B2 (en) 2010-03-30
US20050062021A1 (en) 2005-03-24
JP5339678B2 (ja) 2013-11-13
JP5602173B2 (ja) 2014-10-08
TW200525793A (en) 2005-08-01
US8465850B2 (en) 2013-06-18
US20050269550A1 (en) 2005-12-08
JP2014090195A (ja) 2014-05-15

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St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000