TW200525793A - Method for the application of active materials onto active surfaces and devices made with such methods - Google Patents

Method for the application of active materials onto active surfaces and devices made with such methods Download PDF

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Publication number
TW200525793A
TW200525793A TW093128654A TW93128654A TW200525793A TW 200525793 A TW200525793 A TW 200525793A TW 093128654 A TW093128654 A TW 093128654A TW 93128654 A TW93128654 A TW 93128654A TW 200525793 A TW200525793 A TW 200525793A
Authority
TW
Taiwan
Prior art keywords
active
fluorinated
layer
group
liquid
Prior art date
Application number
TW093128654A
Other languages
English (en)
Chinese (zh)
Inventor
Viacheslav A Petrov
Daniel David Lecloux
Original Assignee
Du Pont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont filed Critical Du Pont
Publication of TW200525793A publication Critical patent/TW200525793A/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/311Phthalocyanine
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/321Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/9512Aligning the plurality of semiconductor or solid-state bodies
    • H01L2224/95143Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
    • H01L2224/95146Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium by surface tension

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
TW093128654A 2003-09-24 2004-09-22 Method for the application of active materials onto active surfaces and devices made with such methods TW200525793A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/669,403 US7686978B2 (en) 2003-09-24 2003-09-24 Method for the application of active materials onto active surfaces and devices made with such methods

Publications (1)

Publication Number Publication Date
TW200525793A true TW200525793A (en) 2005-08-01

Family

ID=34313707

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093128654A TW200525793A (en) 2003-09-24 2004-09-22 Method for the application of active materials onto active surfaces and devices made with such methods

Country Status (5)

Country Link
US (3) US7686978B2 (enExample)
JP (3) JP5339678B2 (enExample)
KR (1) KR101176678B1 (enExample)
TW (1) TW200525793A (enExample)
WO (1) WO2005031889A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI643251B (zh) * 2016-01-28 2018-12-01 東京威力科創股份有限公司 金屬氧化物之旋塗式沉積方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI643251B (zh) * 2016-01-28 2018-12-01 東京威力科創股份有限公司 金屬氧化物之旋塗式沉積方法

Also Published As

Publication number Publication date
US8465850B2 (en) 2013-06-18
KR101176678B1 (ko) 2012-08-23
US20110180761A1 (en) 2011-07-28
US7686978B2 (en) 2010-03-30
JP5339678B2 (ja) 2013-11-13
JP5602173B2 (ja) 2014-10-08
JP2014090195A (ja) 2014-05-15
US20050269550A1 (en) 2005-12-08
JP5757989B2 (ja) 2015-08-05
US20050062021A1 (en) 2005-03-24
JP2007506547A (ja) 2007-03-22
US8287766B2 (en) 2012-10-16
JP2012157859A (ja) 2012-08-23
KR20070029625A (ko) 2007-03-14
WO2005031889A3 (en) 2005-06-23
WO2005031889A2 (en) 2005-04-07

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