TW200520086A - Ultrasonic assisted etch using corrosive liquids - Google Patents

Ultrasonic assisted etch using corrosive liquids

Info

Publication number
TW200520086A
TW200520086A TW093122253A TW93122253A TW200520086A TW 200520086 A TW200520086 A TW 200520086A TW 093122253 A TW093122253 A TW 093122253A TW 93122253 A TW93122253 A TW 93122253A TW 200520086 A TW200520086 A TW 200520086A
Authority
TW
Taiwan
Prior art keywords
etching
inner tank
tank
corrosive liquids
ultrasonic
Prior art date
Application number
TW093122253A
Other languages
English (en)
Other versions
TWI244693B (en
Inventor
Samantha Tan
Ning Chen
Original Assignee
Chemtrace Prec Cleaning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chemtrace Prec Cleaning Inc filed Critical Chemtrace Prec Cleaning Inc
Publication of TW200520086A publication Critical patent/TW200520086A/zh
Application granted granted Critical
Publication of TWI244693B publication Critical patent/TWI244693B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/044—Cleaning involving contact with liquid using agitated containers in which the liquid and articles or material are placed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/102—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration with means for agitating the liquid
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G3/00—Apparatus for cleaning or pickling metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
TW093122253A 2003-07-24 2004-07-26 Ultrasonic assisted etch using corrosive liquids TWI244693B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/627,416 US7091132B2 (en) 2003-07-24 2003-07-24 Ultrasonic assisted etch using corrosive liquids

Publications (2)

Publication Number Publication Date
TW200520086A true TW200520086A (en) 2005-06-16
TWI244693B TWI244693B (en) 2005-12-01

Family

ID=34080634

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093122253A TWI244693B (en) 2003-07-24 2004-07-26 Ultrasonic assisted etch using corrosive liquids

Country Status (7)

Country Link
US (3) US7091132B2 (zh)
JP (2) JP4603542B2 (zh)
KR (1) KR101120707B1 (zh)
CN (2) CN1882397B (zh)
SG (2) SG145689A1 (zh)
TW (1) TWI244693B (zh)
WO (1) WO2005010950A2 (zh)

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CN107671059B (zh) * 2017-10-24 2023-09-26 浙江绿维环境股份有限公司 一种酸雾收集装置
CN109950175A (zh) * 2017-12-21 2019-06-28 有研半导体材料有限公司 一种用于硅环腐蚀的装置及方法
CN108354678A (zh) * 2017-12-28 2018-08-03 南京康翱峰自动化科技有限公司 手术剪的清洗装置
CN108160598A (zh) * 2017-12-28 2018-06-15 南京康翱峰自动化科技有限公司 医疗器械清洗烘干装置
KR102181378B1 (ko) * 2018-10-11 2020-11-20 한양대학교 산학협력단 다공성 규소-저마늄 전극 소재의 제조방법 및 이를 이용한 이차전지
US20200152851A1 (en) 2018-11-13 2020-05-14 D-Wave Systems Inc. Systems and methods for fabricating superconducting integrated circuits
CN111261542A (zh) * 2018-11-30 2020-06-09 有研半导体材料有限公司 一种碱腐蚀去除晶圆表面损伤的装置与方法
CN111689458A (zh) * 2019-03-13 2020-09-22 北京大学 一种高深宽高对称性高表面光滑度硅微半球曲面的制备系统及其工艺方法
CN110369383A (zh) * 2019-07-17 2019-10-25 海安光易通信设备有限公司 一种防尘帽清洗方法
CN111438133A (zh) * 2020-04-30 2020-07-24 深圳市路维光电股份有限公司 铬版清洗治具及清洗方法
WO2022205480A1 (zh) * 2021-04-02 2022-10-06 眉山博雅新材料有限公司 一种组合晶体制备方法和系统
CN111719154A (zh) * 2020-06-08 2020-09-29 江苏双环齿轮有限公司 一种齿轮磨削后表面回火的浸蚀检验装置
CN111863582B (zh) * 2020-07-24 2022-04-22 北方夜视技术股份有限公司 超声悬浮旋转式微通道板腐蚀方法

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Also Published As

Publication number Publication date
SG163440A1 (en) 2010-08-30
TWI244693B (en) 2005-12-01
KR20060093323A (ko) 2006-08-24
WO2005010950A3 (en) 2005-07-07
US20060243390A1 (en) 2006-11-02
US7091132B2 (en) 2006-08-15
US7377991B2 (en) 2008-05-27
CN1882397A (zh) 2006-12-20
US20050016565A1 (en) 2005-01-27
KR101120707B1 (ko) 2012-03-23
JP5475599B2 (ja) 2014-04-16
JP2011017085A (ja) 2011-01-27
JP2007500431A (ja) 2007-01-11
CN1883034A (zh) 2006-12-20
WO2005010950A2 (en) 2005-02-03
US20050016959A1 (en) 2005-01-27
CN1882397B (zh) 2014-06-04
SG145689A1 (en) 2008-09-29
JP4603542B2 (ja) 2010-12-22
CN100449699C (zh) 2009-01-07

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