TW200501214A - Film pattern formation method, device and method for manufacturing the same, electro-optical device, electronic device, and method for manufacturing active matrix substrate - Google Patents
Film pattern formation method, device and method for manufacturing the same, electro-optical device, electronic device, and method for manufacturing active matrix substrateInfo
- Publication number
- TW200501214A TW200501214A TW093114792A TW93114792A TW200501214A TW 200501214 A TW200501214 A TW 200501214A TW 093114792 A TW093114792 A TW 093114792A TW 93114792 A TW93114792 A TW 93114792A TW 200501214 A TW200501214 A TW 200501214A
- Authority
- TW
- Taiwan
- Prior art keywords
- manufacturing
- film pattern
- electro
- active matrix
- pattern formation
- Prior art date
Links
Classifications
-
- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
- A01G31/00—Soilless cultivation, e.g. hydroponics
- A01G31/02—Special apparatus therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1241—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
- H05K3/125—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing by ink-jet printing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
- C23C26/02—Coating not provided for in groups C23C2/00 - C23C24/00 applying molten material to the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/123—Spraying molten metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/09—Ink jet technology used for manufacturing optical filters
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
- H05K2201/09909—Special local insulating pattern, e.g. as dam around component
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1173—Differences in wettability, e.g. hydrophilic or hydrophobic areas
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P60/00—Technologies relating to agriculture, livestock or agroalimentary industries
- Y02P60/20—Reduction of greenhouse gas [GHG] emissions in agriculture, e.g. CO2
- Y02P60/21—Dinitrogen oxide [N2O], e.g. using aquaponics, hydroponics or efficiency measures
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003151288 | 2003-05-28 | ||
JP2003151289 | 2003-05-28 | ||
JP2004095975A JP2005012173A (ja) | 2003-05-28 | 2004-03-29 | 膜パターン形成方法、デバイス及びデバイスの製造方法、電気光学装置、並びに電子機器 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200501214A true TW200501214A (en) | 2005-01-01 |
TWI272643B TWI272643B (en) | 2007-02-01 |
Family
ID=34108553
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093114792A TWI272643B (en) | 2003-05-28 | 2004-05-25 | Film pattern formation method, and method for manufacturing the same, and method for manufacturing active matrix substrate |
Country Status (5)
Country | Link |
---|---|
US (1) | US7235415B2 (zh) |
JP (1) | JP2005012173A (zh) |
KR (1) | KR100620880B1 (zh) |
CN (1) | CN100442954C (zh) |
TW (1) | TWI272643B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI402935B (zh) * | 2005-05-17 | 2013-07-21 | Koninkl Philips Electronics Nv | 彩色主動矩陣顯示器 |
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JP2005012179A (ja) * | 2003-05-16 | 2005-01-13 | Seiko Epson Corp | 薄膜パターン形成方法、デバイスとその製造方法及び電気光学装置並びに電子機器、アクティブマトリクス基板の製造方法 |
KR101100625B1 (ko) * | 2003-10-02 | 2012-01-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 배선 기판 및 그 제조방법, 및 박막트랜지스터 및 그제조방법 |
US7019328B2 (en) * | 2004-06-08 | 2006-03-28 | Palo Alto Research Center Incorporated | Printed transistors |
JP2006080179A (ja) * | 2004-09-08 | 2006-03-23 | Seiko Epson Corp | 配線パターン形成方法、tft用ソース電極およびドレイン電極の形成方法 |
JP2006261240A (ja) * | 2005-03-15 | 2006-09-28 | Seiko Epson Corp | 電子デバイス用基板、電子デバイス用基板の製造方法、表示装置および電子機器 |
JP4345710B2 (ja) * | 2005-05-11 | 2009-10-14 | セイコーエプソン株式会社 | 膜パターンの形成方法 |
JP4239999B2 (ja) * | 2005-05-11 | 2009-03-18 | セイコーエプソン株式会社 | 膜パターンの形成方法、膜パターン、デバイス、電気光学装置、及び電子機器 |
JP4424304B2 (ja) * | 2005-12-07 | 2010-03-03 | セイコーエプソン株式会社 | ディスプレイの製造方法、ディスプレイおよび電子機器 |
KR100753224B1 (ko) * | 2005-12-30 | 2007-08-30 | (재)대구경북과학기술연구원 | 전계발광소자용 백플레인과 이를 포함하는 전계발광소자 |
JP4285544B2 (ja) * | 2007-01-10 | 2009-06-24 | セイコーエプソン株式会社 | 描画方法、着色層の形成方法、電気光学装置の製造方法 |
US8017422B2 (en) * | 2007-06-19 | 2011-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming pattern, method for manufacturing light emitting device, and light emitting device |
JP4418525B2 (ja) * | 2008-02-28 | 2010-02-17 | パナソニック株式会社 | 有機elディスプレイパネル |
EP2304078B1 (en) * | 2008-06-30 | 2015-04-15 | 3M Innovative Properties Company | Method of forming a microstructure |
WO2010002519A1 (en) * | 2008-06-30 | 2010-01-07 | 3M Innovative Properties Company | Method of forming a patterned substrate |
KR101623227B1 (ko) | 2009-02-10 | 2016-05-20 | 가부시키가이샤 제이올레드 | 발광 소자의 제조 방법과 발광 소자 및 발광 장치의 제조 방법과 발광 장치 |
WO2010092797A1 (ja) | 2009-02-10 | 2010-08-19 | パナソニック株式会社 | 発光素子、表示装置、および発光素子の製造方法 |
WO2010092796A1 (ja) | 2009-02-10 | 2010-08-19 | パナソニック株式会社 | 発光素子、発光素子を備えた発光装置および発光素子の製造方法 |
US7952599B2 (en) * | 2009-05-29 | 2011-05-31 | Xerox Corporation | Heating element incorporating an array of transistor micro-heaters for digital image marking |
US7867916B2 (en) * | 2009-06-15 | 2011-01-11 | Palo Alto Research Center Incorporated | Horizontal coffee-stain method using control structure to pattern self-organized line structures |
JP5437736B2 (ja) | 2009-08-19 | 2014-03-12 | パナソニック株式会社 | 有機el素子 |
EP2475226B1 (en) | 2009-08-31 | 2017-08-02 | Joled Inc. | Light emitting element and method for producing the same, and light emitting device |
JP5720006B2 (ja) | 2010-06-24 | 2015-05-20 | 株式会社Joled | 有機el素子、表示装置および発光装置 |
WO2011161727A1 (ja) | 2010-06-24 | 2011-12-29 | パナソニック株式会社 | 有機el素子の製造方法、表示装置、発光装置および紫外光照射装置 |
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JP5612692B2 (ja) | 2010-08-06 | 2014-10-22 | パナソニック株式会社 | 有機el素子およびその製造方法 |
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JP5677432B2 (ja) | 2010-08-06 | 2015-02-25 | パナソニック株式会社 | 有機el素子、表示装置および発光装置 |
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JP5612691B2 (ja) | 2010-08-06 | 2014-10-22 | パナソニック株式会社 | 有機el素子およびその製造方法 |
JP5620495B2 (ja) | 2010-08-06 | 2014-11-05 | パナソニック株式会社 | 発光素子、発光素子を備えた発光装置および発光素子の製造方法 |
JP5677433B2 (ja) | 2010-08-06 | 2015-02-25 | パナソニック株式会社 | 有機el素子、表示装置および発光装置 |
CN103053040B (zh) | 2010-08-06 | 2015-09-02 | 株式会社日本有机雷特显示器 | 有机el元件 |
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WO2012017488A1 (ja) | 2010-08-06 | 2012-02-09 | パナソニック株式会社 | 発光素子とその製造方法、および発光装置 |
WO2012098587A1 (ja) | 2011-01-21 | 2012-07-26 | パナソニック株式会社 | 有機el素子 |
CN103314462B (zh) | 2011-02-23 | 2016-03-02 | 株式会社日本有机雷特显示器 | 有机el显示面板和有机el显示装置 |
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JP2012256756A (ja) | 2011-06-09 | 2012-12-27 | Ricoh Co Ltd | 電気−機械変換膜の形成方法、電気−機械変換膜、電気−機械変換素子、液体吐出ヘッドおよび画像形成装置 |
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JP6123992B2 (ja) | 2013-03-05 | 2017-05-10 | セイコーエプソン株式会社 | 液体噴射ヘッド、液体噴射装置、圧電素子及びその製造方法 |
JP6033712B2 (ja) * | 2013-03-08 | 2016-11-30 | 東レエンジニアリング株式会社 | 塗布膜形成方法および塗布装置 |
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CN104032302B (zh) * | 2014-06-19 | 2016-06-29 | 西安交通大学 | 一种利用带有梯形凹槽的非金属片的金属熔滴沉积方法 |
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CN109119550B (zh) * | 2018-09-11 | 2021-02-26 | 合肥鑫晟光电科技有限公司 | 喷墨打印的方法、像素结构、oled基板、显示装置 |
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JP4035968B2 (ja) | 2000-06-30 | 2008-01-23 | セイコーエプソン株式会社 | 導電膜パターンの形成方法 |
JP2002368393A (ja) * | 2001-06-05 | 2002-12-20 | Toray Eng Co Ltd | 金属配線回路基板の製造方法 |
JP2003080694A (ja) | 2001-06-26 | 2003-03-19 | Seiko Epson Corp | 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、並びに非接触型カード媒体 |
JP2003133691A (ja) | 2001-10-22 | 2003-05-09 | Seiko Epson Corp | 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、並びに非接触型カード媒体 |
-
2004
- 2004-03-29 JP JP2004095975A patent/JP2005012173A/ja active Pending
- 2004-05-19 US US10/848,604 patent/US7235415B2/en active Active
- 2004-05-25 TW TW093114792A patent/TWI272643B/zh active
- 2004-05-25 KR KR1020040037111A patent/KR100620880B1/ko active IP Right Grant
- 2004-05-26 CN CNB2004100476921A patent/CN100442954C/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI402935B (zh) * | 2005-05-17 | 2013-07-21 | Koninkl Philips Electronics Nv | 彩色主動矩陣顯示器 |
Also Published As
Publication number | Publication date |
---|---|
US7235415B2 (en) | 2007-06-26 |
KR100620880B1 (ko) | 2006-09-14 |
CN100442954C (zh) | 2008-12-10 |
KR20040103779A (ko) | 2004-12-09 |
US20050064633A1 (en) | 2005-03-24 |
CN1575105A (zh) | 2005-02-02 |
TWI272643B (en) | 2007-02-01 |
JP2005012173A (ja) | 2005-01-13 |
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