TW200416915A - Wirebonding insulated wire - Google Patents

Wirebonding insulated wire Download PDF

Info

Publication number
TW200416915A
TW200416915A TW093104133A TW93104133A TW200416915A TW 200416915 A TW200416915 A TW 200416915A TW 093104133 A TW093104133 A TW 093104133A TW 93104133 A TW93104133 A TW 93104133A TW 200416915 A TW200416915 A TW 200416915A
Authority
TW
Taiwan
Prior art keywords
wire
electrical connection
welding
item
protrusion
Prior art date
Application number
TW093104133A
Other languages
English (en)
Other versions
TWI246731B (en
Inventor
Fuaida Harun
Kong-Bee Tiu
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of TW200416915A publication Critical patent/TW200416915A/zh
Application granted granted Critical
Publication of TWI246731B publication Critical patent/TWI246731B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/38—Conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45016—Cross-sectional shape being elliptic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45164—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45169—Platinum (Pt) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/4556—Disposition, e.g. coating on a part of the core
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85043—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a flame torch, e.g. hydrogen torch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/85951—Forming additional members, e.g. for reinforcing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85986—Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00015—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20754—Diameter ranges larger or equal to 40 microns less than 50 microns

Description

200416915 玖、發明說明： 【發明所屬之技術領域】 本發明係與線及絲焊有關，更特定言之，其係與一種絕 緣線絲焊方法有關。 【先前技術】 一積體電路（integrated circuit ; 1C)晶粒為形成於一諸如 矽晶圓之半導體晶圓上的一小型裝置。此晶粒通常係從該 晶圓上切割下來，並附著於一基板或基礎載體上用於互連 再分佈。接著，晶粒上的焊墊藉由絲焊與該載體上的引線 電性連接。不斷需要有更密集的積體電路（1C)，且該1C之印 跡的尺寸不應有相應之增加。還需要有更多1(:輸入及輸 出，使晶片與其封裝之間具有高密度的連接，並需要有精 細的間距與超精細間距的絲焊。由於已將焊墊之間的間隔 減小，來容納更多數量的焊墊，故焊線直徑亦應減小。例 如，在63 μχη間距之應用中使用了直徑25 μιη的線，而在52 Mm與44 μπι間距之應用中要使用直徑2〇·3 μηι的線。現在已 經發展到能在37 μιη間距之應用中使用直徑17 μιη的線。 線直徑的減小給操作及絲焊造成困難。在模造階段，使 用更小直徑線的零件容易遭到更多線掃除拒絕，這會造成 線知:路。此等線掃除及短路可藉由使用絕緣或塗佈線來減 ,、而，^使用塗佈線，特別是為該第二焊接使用時， 报難獲彳于良好的焊接品質。即，一絲焊機要在裝置焊墊處 進行第焊接，並在載體焊墊處進行第二焊接。使用絕緣 線的一普遍問題是在該第二焊接上不能黏合。
〇:_12〇6_D〇C 200416915 【發明内容】 本，明提供—種使用標準超聲波絲焊機的方法，其可改 善。亥第—焊接的焊接品質，從而進一步提高絕緣線在絲 應用中的使用。 【實施方式】 下文中參考附圖所作的詳細說明旨在說明本發明目前的 較佳具體實施例，並非代表本發明的唯一實施形式。應明 白’藉一由包含在本發明之精神及範，内的不同具體實施 例’可貫現相同或相當的功能。 為方便說明’圖式中的某些特徵被放大’圖式及复中的 元件不一定為正確的比例。然而，熟習此項技術者报容易 明白此類細節。圖式中，相同的數字係用來表示相同的元 件0 一本發明為—電性連接，用於連接—第-裝置之-烊墊及 一第二裝置之-焊塾。該電性連接包括—第__絲烊，用於 將-絕緣谭線之-第一部分固定至該第—裝置谭塾。—第 二絲焊將該絕緣焊線之―第：部分固定至該第二裝d 塾。—凸起形成於該第二絲焊之上，其可提高該第二于 _離強度。該凸起係從該第二絲焊之一中心處偏移，偏 =距離較佳應約為凸起之—直徑的—半。在—較佳具 軛例中，該凸起係由金形成。 、 本發明亦提供-種用於將一第一衷置電性連接至—第二 =二該方法包括形成一第，、一第二… 干接上之一凸起的步驟。該第—焊接係藉由將一絕
O:\9A91206.DOC 200416915 緣線之-第一部分絲焊至該第一裝置之_焊塾上而形成， 其電性連接該焊線及該第一裝置。該第二焊接係藉由將該 絕緣線之-第二部分絲焊至該第二裝置之一烊墊上而形 成，其電性連接該第一裝置與第二裝置。形成於該第二焊 接上的凸起係從該第二焊接之一中心處偏移。 現在翏考ΒΠ ’其顯示依據本發明之_電性連接的一放大 t視圖。該電性連接使—第-裝置之—料iq與—第二裝 ^之^焊㈣連接，從而使該等第—與第二裝置電性連 板上^ 4置可以為—半導时置，諸如形成於—石夕基 諸七^ a /弟一虞置亦可以為一半導體裝置， 诸如一堆璺晶粒組態中— 較佳且矽每_丨^下邛日日粒。然而在目前的 第二裝置為—載體，且第二裝置焊 墊2為该载體之一引線。該 類型已為孰習此項脖本“、弟置及其焊墊之 明而做乂 瞭解’且無須為完全理解本發 明而做詳細說明。 町十私 該電性連接包括一絕緣焊線14，1且右一 將絕緣焊線14之一第—部分或端部固i至第弟^焊16， 上。—第二絲蟬18將絕緣焊線14之 衣卜㈣ 裝置焊墊12上。在目前…土 弟分固定至第二 ., 車父佳具體實施例巾，第一辞们6 為一球形焊接，第二料18為—㈣ 《、接16 产術語「絲焊」公認為指晶片與基板經^ 等線接合至焊塾最常用的 ，、互連。將该 超聲波焊接。超聲波 / 5 U由熱超聲波焊接或是 &耳/反、、、糸谇使用振動鱼 焊塾間的介面，造成局部溫來摩擦線與 k而促進橫跨邊界之
O:\91\91206.DOC 416915 2子的擴散。而熱超聲波焊接除振動之外，還使用了熱， 步促進了材料的移動。在球形料中，用—毛細管 線。使形成於該線之-端的_球體正對該毛細管表 =壓。該球體可以氫焰或火花方式形成。該毛細管對著焊 推動球體’隨後’當其對著該第—焊塾保持該球體時^ =加超聲波振動，將球體焊接至該晶粒上。此舉稱為該第 /接。：旦球體已焊接至晶粒上，將仍保持線的該毛細 官移至-第二焊墊之上，該焊墊將與第—料電性連接。 要形成一針腳形焊接，需使線正對第二焊墊受壓，形成一 t形桿接。然後再次施加一超聲波能量，直至將線焊接至 弟二焊墊。隨後將毛細管提起，從該焊接移開，折斷線。 此針腳形焊接稱為f二焊接。針腳形焊接與球形 熟習此項技術者所孰知。 /雖然針腳形焊接已為吾人所熟知，但在使用絕緣線時， 很難獲得-良好的第二絲焊。通常，不牢固㈣二焊接係 由於在線與焊接引線之間仍存在線絕緣，阻止了良好黏 合。即在線與引線之間僅有少量接觸區域，其位於第二焊 接之尾部區域。在該線對面，將該絕緣體之一更大部分在 楔形構造過程中拿掉。該不牢固的黏合在線剝離測試結果 中顯而易見。在一線剝離測試中，將一鉤置於最接近第二 焊接的線之下，並施加一提升力，藉此測試第二焊接的強 度。絕緣精細線及絕緣超精細線通常顯示出甚低的線剝離 強度。為克服低線剝離強度問題，於第二絲焊18上形成一 凸起20。
O:\91\91206.DOC -9 - 200416915 現在參考圖2，其顯示該第二絲焊丨8之一大幅放大的示意 圖。可以看到，凸起2〇係從第二絲焊丨8處偏移。在本發明 目月il之一較佳具體實施例中，凸起2〇偏移的距離約為其直 徑「d」的一半。凸起2〇的直徑在相當程度上需依據其得-以 形成的線14的直徑。對於直徑為25 μηι的線，凸起2〇的直徑 可以為約40至約50 μιη。例如，就25 μπι(1密爾）線而言，凸 起20的直徑可控制在約45與55之間。為提供良好黏合， 凸起20較佳應由與線14之導電材料相同的材料形成。例 若線14具有一金質導電核心，則凸起較佳應由金形 成在本發明之一具體實施例中，一 20 μηι塗佈金線係絲焊 至一 76 μηι X 7ό μηι的焊墊上。形成於該焊墊上之凸起的直 徑約為35 μπι。 凸起20可以與形成第一絲焊16相同之方式，諸如採用氫 焰或高壓電火花的方式形成或沈積於第二裝置焊墊12之 上。更特定言之，一球體係形成於該絲焊機中之線14的一 端。形成的球體正對絲焊機毛細管的表面受壓。該毛細管 對著第二絲悍18推動球體，隨後，當其對著焊墊Η保持該 球體時，施加超聲波振動，將球體焊接至第二絲焊18及焊 墊12。一旦球體已焊接至焊墊12，即可在上提毛細管時， 藉由失住毛細管上的線來切斷已焊接球體上的線。球體上 方的線區域最不牢固，將其空出，僅留下凸起2〇。凸起2〇 可採用目前可利用的絲焊機，諸如〖111泌]^與8〇：^&8〇6〇絲焊 機來形成，而無須修改毛細管。 圖3為圖1之焊線14之放大斷面圖。通常，金與鋁為製造
OA91\91206.DOC -10- 200416915 焊線取常用的元件。金與鋁均有硬度及延展性，並在多數 %境下具有類似的電阻。為加強穩定性，有時用諸如鈹、 鈣等摻雜劑對金線摻雜。直徑較小的鋁線常常用矽或有時 用鎂來摻雜，以改善其折斷負荷及延長參數。除金與鋁之 外，亦已知有銅、鈀合金、鉑或銀質焊線。本發明之焊線 14包括塗佈有電絕緣材料24的一導電核心22，適用於精細 間距及超精細間距之絲焊。焊線14具有小於約55 且可小 於30 μηι之一直徑。核心22較佳應包括金或銅，且絕緣材料 24為一有機絕緣塗層，厚度為約〇 5至約2 〇从㈤，在流通空 氣球體形成過程中可遭受熱分解。而且，焊線14較佳應具 有約180。至260。(：的一溫度Tg，其中，Tg指軟化溫度，亦稱 為玻璃轉變溫度。 參考圖4，其顯示不同線與絲焊之剝離強度的曲線圖。點 4〇表示採用標準楔形焊接的一標準2〇 μιη直徑（未塗佈）線的 剝離強度約為7 gm。點42表示依據本發明採用標準楔形焊 接與凸起20的一標準20 μηι直徑（未塗佈）線的剝離強度約為 6.5 gm，比無凸起的焊接小〇 5 gm。點44表示採用標準楔形 焊接的一 23 μηι直徑塗佈線的剝離強度。該剝離強度僅約為 2 gm，此強度甚低。與此相反，點46表示依據本發明採用 標準楔形焊接與凸起20的該23 μηι直徑塗佈線的剝離強 度。包括凸起20的該塗佈線與焊接具有約51 §111的剝離強 度，與無凸起焊接相比，此係一重大改善。然而，其結果 卻有些令人吃驚，因為事實發現，當該絲焊包括一凸起時， 未塗佈線的剝離強度降低了。
O:\91\91206.DOC -11 - 200416915 業已發現本發明能提供 使用絕緣線時，由於” ：Λ·():以"^準絲烊機 由於5亥弟二焊接處的「未能在引線上黏 H，離零件拒絕現象幾乎可以消除，·⑻以—增加的線拉動/ 相離強度來提高位於第二焊接處的絕緣線的邊界性 無須㈣新的或修改過的絲焊設備，且在執行該第二谭接 操作前亦不需要進行任何額外的升級來移除該線上的絕緣 層’⑷減少了模造處的線短路拒絕現象；⑷無須使用具有 甚精細之填充劑的昂貴模造化合物；（f)使用的精細塗佈線 能夠橫向焊接；以及⑷焊墊/晶粒設計規則無須僅限於周邊 焊塾。 本發明較佳具體實施例之說明係為了說明及描述本發 明，並不希望包攬無遺或將本發明限於所揭露的形式。熟 習此項技術者應明白，可對上述具體實施例進行修改，而 不背離本發明之寬廣的發明概念。本發明適用於所有絲焊 封裝類型，包括但不限於BGA、QFN、QFP、PIXC、 CUEBGA、TBGA與TSOP封裝。因此，應明瞭本發明不限 定於所揭示的特定具體實施例，而是涵蓋由所附申請專利 範圍疋義的本發明之精神及範缚内的修改。 【圖式簡單說明】 當配合附圖詳讀前面的發明内容及上文中的本發明一較 佳具體實施例之詳細說明時，將可更明白本發明。基於解 說本發明之目的，圖式中顯示本發明目前的較佳具體實施 例。但是，應明白，本發明不限定於如圖所示的精確配置 及機構。圖式中： O:\91\91206.DOC -12- 200416915 圖1為依據本發明之一電性連接的放大側視圖； 圖2為圖1之第二絲焊之一放大侧視圖； 圖3為圖1之焊線的放大斷面圖；以及 圖4為使用各種線及絲焊的該第二焊接之剝離強度的曲 線圖。 【圖式代表符號說明】 10 焊墊 12 焊墊 14 絕緣焊線 16 第一絲焊 18 第二絲焊 20 凸起 22 導電核心 24 絕緣材料 40 > 42 ^ 44 ^ 46 點 d 直徑
O:\91\91206.DOC 13-

Claims (1)

  1. 200416915 拾、申請專利範園：
    一種將一第一裝置與一第 法包括如下步驟： 二裝置電性連接之方法， 該方 藉由將一絕緣線之一第一 焊墊上而形成一第一焊接， 一裝置； 部分絲焊至該第一裝置之〜 從而電料#該焊線與該第 …N工吻示一览晋 丈干塾上而形成一 H ^ -r* 該第二裝置；収 補袭置與 於該第二焊接上形成一凸 I其中该凸起係從該第二 少干接之一中心處偏移。 2.如申請專利範圍第丨項之電性 埂接方法，其中位於該第二 知妾上的該凸起偏移的距離 „ 、j局忒凸起之一直徑的一 平0 其中該凸起具有 其中該凸起係由 3. 如申請專利範圍第1項之電性連接方法 約40至50 μη的一直徑。 4. 如申請專利範圍第1項之電性連接方法 金形成。 5，如申請專利範圍第丨項之電性 甘士— π试A — 逆镬方法，其中該絕緣線包 括具有一有機絕緣塗層的一金或銅線之一。 6 ·如申％專利範圍第5項之電性彳查拉+ 包『生連接方法，其中該絕緣線具 有丨、於或荨於約2 5 μχη的一直經。 7.如申請專利範圍第6項之電性連接方法，其中該絕緣塗層 具有約為0·5 μιη至2.0 μιη的一厚度。 O:\9I\9I206.DOC 8. 8. 其中該絕緣塗層 其中該第一焊接 其中該第二焊接 其中該第二裝置 如申請專利範圍第7項之電性連接方法 具有約為180。至26〇π的一溫度Tg。 9. 10. 11. 12. 13. 14β 15. 如申凊專利範圍第1項之電性連接方法 包括一球形焊接。 如申請專利範圍第1項之電性連接方法 包括一針腳形焊接。 如申凊專利範圍第1項之電性連接方法 包括一載體。 一種提高楔形焊接至一引绩 i上h 、線的一塗佈線之一第二絲焊之 又之方法，该方法包括如下步驟： :該第二焊接上形成一凸起，其中該凸起係從該第二 知·接之一中心處偏移。 二裝置之一焊 一部分固定至 一種用於連接一第一裝置之一焊墊及一第 墊之電性連接，該電性連接包括： 一第一絲焊，其係將一絕緣焊線之一第 該第一裝置焊墊上； > Μ第_絲¥ ’其係將該絕緣焊線之—第二部分固定至 5玄苐一裝置焊墊上；以及 -凸起’其係形成於該第二絲焊之上，其中該凸起係 從該第二絲焊處偏移。 如申晴專利範圍第13項之電性連接，其中位於該第二焊 接上的該凸起偏移的距_約為言亥凸起之一直徑的一半。 如申睛專利範圍第13項之電性連接，其中該凸起具有約 4 0至5 0 μηι的一直徑。 O:\91\91206_DOC -2- 200416915 16 17. 18. 19. 20. 21. 22. 23. 之電性連接， 如申請專利範圍第13項 形成。 如申請專㈣圍第13項之電性連接， 具有—有機絕緣塗層的—金或銅線之 如申請專利範圍第17項之電性連接， 小於或等於約25 μιη的—直徑。 如申請專利範圍第18項之電性連接， 有約為〇·5 μιη至2.0 _厚度。 如申請專利範圍第17項之電性連接， 有約為180。至260〇C的一溫度Tg。 如申請專利範圍第13項之電性連接， 括一球形焊接。 如申凊專利範圍第丨3項之電性連接， 括一針腳形焊接。 如申請專利範圍第13項之電性連接方 置包括一載體。 其中該凸起係由金 其中該絕緣線包括 —〇 其中該絕緣線具有 其中該絕緣塗層具 其中該絕緣塗層具 其中該第一焊接包 其中該第二焊接包 法’其中該第二裝 O:\91\91206.DOC
TW093104133A 2003-02-20 2004-02-19 Wirebonding insulated wire TWI246731B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/372,061 US6854637B2 (en) 2003-02-20 2003-02-20 Wirebonding insulated wire

Publications (2)

Publication Number Publication Date
TW200416915A true TW200416915A (en) 2004-09-01
TWI246731B TWI246731B (en) 2006-01-01

Family

ID=32868472

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093104133A TWI246731B (en) 2003-02-20 2004-02-19 Wirebonding insulated wire

Country Status (7)

Country Link
US (1) US6854637B2 (zh)
EP (1) EP1617967A4 (zh)
JP (1) JP2007524987A (zh)
KR (1) KR20050102660A (zh)
CN (1) CN100430176C (zh)
TW (1) TWI246731B (zh)
WO (1) WO2004075347A2 (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7261230B2 (en) * 2003-08-29 2007-08-28 Freescale Semiconductor, Inc. Wirebonding insulated wire and capillary therefor
US7086148B2 (en) * 2004-02-25 2006-08-08 Agere Systems Inc. Methods and apparatus for wire bonding with wire length adjustment in an integrated circuit
US7475802B2 (en) * 2004-04-28 2009-01-13 Texas Instruments Incorporated Method for low loop wire bonding
JP2006324553A (ja) * 2005-05-20 2006-11-30 Renesas Technology Corp 半導体装置及びその製造方法
US7205673B1 (en) * 2005-11-18 2007-04-17 Lsi Logic Corporation Reduce or eliminate IMC cracking in post wire bonded dies by doping aluminum used in bond pads during Cu/Low-k BEOL processing
JP5481769B2 (ja) * 2006-11-22 2014-04-23 日亜化学工業株式会社 半導体装置及びその製造方法
US20080131998A1 (en) * 2006-12-01 2008-06-05 Hem Takiar Method of fabricating a film-on-wire bond semiconductor device
CA2609018A1 (en) * 2007-09-28 2009-03-28 Stephane Labelle Systeme permettant de mieux exploiter la geothermie haute temperature
JP5062283B2 (ja) 2009-04-30 2012-10-31 日亜化学工業株式会社 半導体装置及びその製造方法
US8283780B2 (en) 2010-11-25 2012-10-09 Freescale Semiconductor, Inc Surface mount semiconductor device
US9613877B2 (en) * 2013-10-10 2017-04-04 UTAC Headquarters Pte. Ltd. Semiconductor packages and methods for forming semiconductor package
TWI594336B (zh) * 2016-08-15 2017-08-01 Insulation bonding wire
CN107731772B (zh) * 2017-09-13 2020-08-04 北京无线电测量研究所 一种楔形键合引线加固结构和加固方法
US10366958B2 (en) 2017-12-28 2019-07-30 Texas Instruments Incorporated Wire bonding between isolation capacitors for multichip modules
DE102020124705A1 (de) 2020-09-22 2022-03-24 Te Connectivity Germany Gmbh Verfahren zur Herstellung eines Leitungssystems und Leitungssystem

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5176310A (en) * 1988-11-28 1993-01-05 Hitachi, Ltd. Method and apparatus for wire bond
JPH0513491A (ja) * 1990-12-19 1993-01-22 Tanaka Denshi Kogyo Kk 被覆ワイヤのワイヤボンデイング方法及び半導体装置
JPH05129357A (ja) * 1991-11-01 1993-05-25 Tanaka Denshi Kogyo Kk ボンデイング用ワイヤ
JPH06291160A (ja) * 1993-03-31 1994-10-18 Nippon Steel Corp 半導体装置および半導体装置の製造方法
JPH07249648A (ja) * 1994-03-10 1995-09-26 Nippon Steel Corp 半導体装置
EP0828582A4 (en) * 1995-05-26 1999-02-03 Formfactor Inc RIBBON TYPE CENTRAL INTERCONNECTION ELEMENTS
JPH1093009A (ja) * 1996-09-17 1998-04-10 Toshiba Corp 半導体チップモジュール、マルチチップモジュールおよび電子機器
SG76530A1 (en) * 1997-03-03 2000-11-21 Hitachi Chemical Co Ltd Circuit boards using heat resistant resin for adhesive layers
JPH10335368A (ja) * 1997-05-30 1998-12-18 Sanyo Electric Co Ltd ワイヤボンディング構造及び半導体装置
JP2001015541A (ja) * 1999-06-28 2001-01-19 Sumitomo Electric Ind Ltd 半導体装置および半導体装置の製造方法
US20020113322A1 (en) * 2000-06-12 2002-08-22 Shinichi Terashima Semiconductor device and method to produce the same
US6898849B2 (en) * 2000-09-27 2005-05-31 Texas Instruments Incorporated Method for controlling wire balls in electronic bonding
TW465064B (en) * 2000-12-22 2001-11-21 Advanced Semiconductor Eng Bonding process and the structure thereof
US6472743B2 (en) * 2001-02-22 2002-10-29 Siliconware Precision Industries, Co., Ltd. Semiconductor package with heat dissipating structure
CA2363409A1 (en) * 2001-11-20 2003-05-20 Microbonds, Inc. A wire bonder for ball bonding insulated wire and method of using same
JP3584930B2 (ja) * 2002-02-19 2004-11-04 セイコーエプソン株式会社 半導体装置及びその製造方法、回路基板並びに電子機器
TW525281B (en) * 2002-03-06 2003-03-21 Advanced Semiconductor Eng Wafer level chip scale package
US20030230796A1 (en) * 2002-06-12 2003-12-18 Aminuddin Ismail Stacked die semiconductor device

Also Published As

Publication number Publication date
US6854637B2 (en) 2005-02-15
CN1750901A (zh) 2006-03-22
EP1617967A4 (en) 2008-09-03
TWI246731B (en) 2006-01-01
JP2007524987A (ja) 2007-08-30
US20040164126A1 (en) 2004-08-26
KR20050102660A (ko) 2005-10-26
EP1617967A2 (en) 2006-01-25
WO2004075347A2 (en) 2004-09-02
CN100430176C (zh) 2008-11-05
WO2004075347A3 (en) 2004-12-09

Similar Documents

Publication Publication Date Title
US4717066A (en) Method of bonding conductors to semiconductor devices
Liu et al. Challenges and developments of copper wire bonding technology
US7470996B2 (en) Packaging method
US8198737B2 (en) Method of forming wire bonds in semiconductor devices
TW200416915A (en) Wirebonding insulated wire
US7261230B2 (en) Wirebonding insulated wire and capillary therefor
WO2013018238A1 (ja) ボールボンディングワイヤ
JP5064577B2 (ja) ボールボンディング用ワイヤ
WO2005018864A2 (en) Capillary with contained inner chamfer
JP3527356B2 (ja) 半導体装置
EP1367644A1 (en) Semiconductor electronic device and method of manufacturing thereof
JPS60154537A (ja) 半導体デバイスの製作方法
US8174104B2 (en) Semiconductor arrangement having specially fashioned bond wires
EP2167269A1 (en) Wire bonding capillary tool having multiple outer steps
JP2007019349A (ja) ボンディングワイヤ
TWI290761B (en) Semiconductor device and a method of manufacturing the same
JP3800929B2 (ja) 半導体パッケージとその製造法及び半導体パッケージ用絶縁テープ基板
JP2000223534A (ja) 半導体実装装置及び半導体チップの実装方法
JPH08236575A (ja) 半導体装置及びその製造方法
Jaafar et al. Study on ultra low loop copper wire bonding process using 0.8 mils Cu wire for low profile package applications
JPH03208355A (ja) 半導体装置及びその製造方法
TW201007911A (en) Copper on organic solderability preservative (OSP) interconnect and enhanced wire bonding process
JPH0448742A (ja) 半導体装置及びその製造方法
JPS6123331A (ja) 半導体装置の製造方法
JPS6118139A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees